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Feee BJT Presenetations

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12 views12 pages

Feee BJT Presenetations

Uploaded by

shanmukhtvrm
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Module – 3: Semiconductor Devices & Applications

▪ Introduction to Semiconductor devices


▪ Conduction in semiconductor materials
▪ PN junction diodes: IV characteristics and current equation
▪ Rectifier circuits design, and analysis
▪ Zener diode and applications
▪ BJT: BJT characteristics and biasing
▪ BJT as an Amplifier and switch
▪ Introduction to MOSFET

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 1


Module – 3: Reverse breakdown in P-N junction

• Zener breakdown • Avalanche breakdown

• Occurs when the voltage across a • Occurs when high-energy minority


junction exceeds a certain value, carriers collide with the other atoms
causing a high electric field which in and break the covalent bonds → Lead
turn break the covalent bonds → Lead to high EHP generation → cause other
carriers to get liberated → High
to high EHP generation → High current
current
• Usually occurs at VBD > 7 V
• Usually occurs at VBD < 5 V
• Application: Noise generators
• Application: Voltage regulators • Operating voltage: Up to several
• Operating voltage: 2 V to 200 V hundred volts

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 2


Module – 3: Diode – I-V Characteristics

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 3


Module – 3: Ideal diode model

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 4


Module – 3: Constant voltage drop model

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 5


Module – 3: Problems on P-N diodes
Problem-1:
Consider a forward biased p-n junction, and conducting a current I = 0.1 mA. Calculate
a) Is
b) The F.B voltage V
c) I due to hole injection
d) I due to electron injection
e) Ratio of I due to hole injection and electron injection
Note: NA = 1018 /cm3, ND = 1016 /cm3, A = 10-4 cm2, and ni = 1.5×1010 /cm3, Lp = 5 µm, Ln = 10
µm, Dp (n-region) = 10 cm2/V-s, Dn (p-region) = 18 cm2/V-s

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 6


Module – 3: Problems on P-N diodes
Problem-2:
Determine ID and VD for the case VDD = 5 V and R = 10 kꭥ using ideal diode model and
constant voltage drop model. Assume that the diode has a voltage of 0.7V at 1mA of current.

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 7


Module – 3: Problems on P-N diodes
Problem-3:
Determine VD , VR and ID for the below circuit.

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 8


Module – 3: Problems on P-N diodes
Problem-4:
Determine VD , VR and ID for the below circuit.

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 9


Module – 3: Problems on P-N diodes
Problem-5:
Determine V0 and Id for the below circuit.

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 10


Module – 3: Problems on P-N diodes
Problem-6:
Determine V0 , ID , and VD2 for the below circuit.

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 11


Module – 3: Problems on P-N diodes
Problem-7:
Determine the DC resistance for the diode when
(a) ID = 2mA
(b) ID = 20mA
(c) VD = -10V

ECE1002: Fundamentals of Electrical and Electronics Engg. Dr. G D V Santhosh Kumar 12

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