Experiment

Study of Hall Effect

Apparatus

Commercial setup with the following components: electromagnet with power supply, Hall
probe, Semiconductor sample, arrangement for pressure contact, current supply with
meter, voltmeter etc.

Objective:

To study Hall effect in extrinsic semiconducting samples and determine the type and
density of majority charge carriers. This experiment demonstrates the effect of Lorentz
force.

Introduction:
Consider a rectangular slab of semiconductor with thickness d kept in XY plane [see
Fig. 1(a)]. An electric field is applied in x-direction so that a current I flows through the
sample. If w is width of the sample and d is the thickness, the current density is given by
Jx=I/wd.

Jx q W VH
X
Z
d
B

Fig. 1

Now a magnetic field B is applied along positive z axis (fig. 1). If the charge carriers are
positive (negative) and are moving with velocity v along positive (negative) x-axis then
the direction of force experienced by the charge carriers in presence of magnetic field is
along negative y direction. This results in accumulation of charge carriers towards bottom
edge (fig1.). This sets up a transverse electric field Ey in the sample. The potential, thus
developed , along y-axis is known as Hall voltage VH and this effect is called Hall effect.
Assuming Ey to be uniform the Hall voltage is given by
VH = E y w (1)
and the hall coefficient RH is given by
Ey V d
RH = = H (2)
JxB IB
The majority carrier density n is related to the Hall coefficient by the relation

FOOYOO
 1
RH = (3)
qn
where q is the charge.

From Equation (3), it is clear that the sign of charge carrier and density can be estimated
from the sign and value of Hall coefficient RH. RH can be obtained by studying variation
of VH as a function of I for given B.

Experimental Set-up
Sample is mounted on a sunmica sheet with four spring type pressure contacts. A
pair of green colour leads are provided for current and that of red colour for hall voltage
measurement. Note the direction of current and voltage measurement carefully. Do not
exceed current beyond 10 mA.
The unit marked "Hall Effect Set-up" consists of a constant current generator
(CCG) for supplying current to the sample and a digital milli voltmeter to measure the
Hall voltage. The unit has a digital display used for both current and Hall voltage
measurement.
For applying the magnetic field an electromagnet with a constant current supply is
provided. It is capable of generating a magnetic field of 7.5 Kgauss between its pole
pieces. The magnetic field can be measured by gauss meter along with the hall probe
based on the Hall effect.

Procedure

1. Connect the leads from the sample to the "Hall effect Set-up" unit. Connect the
electromagnet to constant current generator.
2. Switch on the current through sample and measure the hall voltage without any
magnetic field. There may be some voltage due to misalignment of pressure contacts
on the sample. This error must be subtracted from the readings.
3. Switch on the electromagnet and set suitable magnetic field (<3 Kgauss). You can
measure this using Hall probe. (Set magnetic field B=2 kG and B=3 kG for the
experiment).
4. Insert the sample between the pole pieces of the electromagnet such that I, B and V are
in proper direction (Fig.1).
5. Record the hall voltage. Also record voltage by reversing both the current and
magnetic field simultaneously. (Note down data for the first two columns with +B for
all I’s and then reverse the field (-B) to record data for the next two columns)
6. Keeping the magnitude of magnetic field constant, measure hall voltage as a function
of I.
7. Repeat step 5 and 6 for various magnetic fields.
Plot VH as a function of I using the averaged data and find the value of Hall coefficient
from the slope of the graph. Hence determine charge carrier density and type of majority
carrier in the given material.
Note down the sample number or details of the sample.
Observation Table:
Sample number: Thickness of the sample: Magnetic field: B= 2000 Gauss

Sl. I VH1(+I,+B) VH2(-I,+B) VH3(+I,-B) VH4(-I,-B) VH avg

No. (mA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8

Magnetic field: B= 3000 Gauss

Sl. I VH1(+I,+B) VH2(-I,+B) VH3(+I,-B) VH4(-I,-B) VH avg

No. (mA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8

Plot two graphs and from the slope, calculate Hall coefficient RH.

From the sign of the Hall voltage with the given current and field direction, determine the
type of conductivity in the semiconductor material.

Calculate free carrier density (n) = 1/(q RH) = …. m-3

Results:

For the given sample, RH = ……..

n = …….
Type of majority carrier = ……

(Two graph papers required).

Reference: D. K. Schroder, “Semiconductor Material and Device Characterization”, John

Willey & Sons Inc. 1990, Chap 5