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4 views

Assignment#10

Uploaded by

Avinash choudhary
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EE5313: Semiconductor Device Modeling

TAs: Anirudh B S: [email protected]; Binoy: [email protected]


Assignment #10

Try yourself to solve the problems with detailed steps. Submit the final answers in moodle
(taking a limited-time quiz) once you are ready with all the solutions.

If needed, assume the following values by default unless otherwise specified: Si is


the default semiconductor; SiO2 is the default oxide; T @room temperature is 300 K;
ni @room temp. = 1010 cm−3 ; k B T=0.026 eV (at room temperature); Permittivity for vac-
uum: ϵ0 =8.85 × 10−14 F/cm, relative permittivity: ϵr,Si =11.8, ϵr,SiO2 =3.9.

Question: 1 2 3 4 5 Total
Points: 2 2 2 2 2 10
Score:
Problem statements

A Si MOSFET, whose body is shorted to the source, is part of a circuit with power supply
voltage (VDD ) of 2 V. It has the following parameters: channel length (L) = 0.5 µm; channel
width (W) = 2.0 µm; substrate doping (NA ) = 2 × 1017 cm−3 ; gate oxide thickness (tox ) = 10
nm; flat-band voltage (VFB ) = - 0.85 V [VFB = ϕms and Qox = 0]

1. (2 points) Calculate the threshold voltage (Vth ) of this MOSFET.

2. (2 points) This MOSFET is to be scaled down by a factor of 2 (i.e. L = 0.25 µm, etc.)
using constant field scaling laws in order to maintain long channel behavior. What is
the value of Vth for the scaled device?

3. (2 points) If VDD is also scaled by a factor of 2 as per the scaling law, by what factor
would IDmax scale? [IDmax is the value of drain current (IDS ) when VGS = VDS = VDD ].

4. (2 points) It is desired that the IDmax /VDD ratio of the scaled device is the same as
that of the original device. In order to achieve this, what should be the value of VDD
for the scaled device?

5. (2 points) If Vth is to be scaled by a factor of 2 from its original value, one may like to
use a new kind of metal with a required work function. What should be the difference
of the work function of the new metal with respect to the previous metal. Given that
the electron affinity and bandgap of Si are 4.05 eV and 1.12 eV, respectively.

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