M5
M5
General Applications
o Navigation
o Position sensing Common Applications
o Industrial monitoring • Automotive (wheel speed sensors, compass).
• Consumer electronics (smartphones, gaming
controllers).
• Industrial applications (position sensors in machinery).
Operating Principles of Magnetic Sensors
Basic Principles
• Interaction between magnetic fields and conductive materials
• Magnetic flux and field strength are key parameters.
Key Concepts
Magnetic Flux:
The measure of the amount of
magnetic field passing through a given area
Components
Hall Plate: Conductive material where the Hall effect occurs
Magnetic Field Source: Creates the magnetic field
Output Electronics: Converts Hall voltage into a readable signal
Applications
• Speed sensing (e.g., in motors)
• Position sensing (e.g., in automotive applications)
• Current measurement (e.g., in electrical circuits)
HALL EFFECT
The Hall effect is named after Edwin Hall, who in 1879 discovered that a voltage
potential develops across a current-carrying conductive plate when a magnetic field
passes through the plate in a direction perpendicular to the plane of the plate
The fundamental physical principle behind the Hall effect is the Lorentz force. When an
electron moves along a direction, v, perpendicular to the applied magnetic field, B, it
experiences a force, F, the Lorentz force, that is normal to both the applied field and the
current flow.
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Hall Sensor
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Materials Used
• Hall effect sensors are based on semiconductors rather than metals because
their conductivity is smaller and the drift velocity of the charge carriers in
semiconductors is larger than in metals, hence yielding a larger Hall voltage.
• Some of the materials used for Hall elements are InSb, InAs, Ge, GaAs, and Si.
• III-V semiconductors yield higher sensitivity because of their larger carrier mobility.
• InSb has a sensitivity of 1.6 V/(TmA)
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Applications
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Advantages
• Produces an Output Voltage independent of the rate of variation of the detected field
(Hall sensors do not reach beyond 1 MHz)
• Hall effect depends only on carrier mobility, there are no perturbations due to
surface effects Insensitive to some ambient conditions (dust, humidity, vibration)
Limitations
• Presence of Offset Voltage, i.e., an output voltage even in the absence of
any magnetic field in spite of having well-centered electrodes
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Hall effect Sensor
(in the interrupter switching mode)
Small Air Gap
The Hall sensor and the magnet could be molded into a common
housing, thus eliminating the alignment problem. The ferrous vanes,
which interrupt the magnetic flux, could have linear or rotating motion.
An example of such a device is an automobile distributor.
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Magneto-resistive Sensors
Principle
• Resistance of material changes in response to a magnetic field
Types:
• Anisotropic Magneto-resistive (AMR): Resistance changes with the angle of
the magnetic field
• Giant Magneto-resistive (GMR): Significant change in resistance due to a
magnetic field
Applications
• Hard disk drives (data reading)
• Automotive and industrial magnetic field sensing
Applications
• Position Sensing: AMR sensors are used to detect the position of
mechanical parts by measuring changes in the magnetic field caused by
movement.
• Rotation Sensing: These sensors can detect rotational speed and direction
in various industrial and automotive applications (e.g., crankshaft or wheel
speed detection).
• Current Sensing: By detecting the magnetic field generated by a current-
carrying conductor, AMR sensors can indirectly measure current levels.
• Magnetic Field Detection: AMR sensors are used in navigation systems,
compass modules, and geomagnetic field detection for tracking and
orientation purposes.
• Security Systems: In anti-tampering devices and switches, AMR sensors
help detect changes in magnetic fields caused by unauthorized actions.
Semiconductor Magneto-resistors
Semiconductor magneto-resistors are resistive devices whose electrical resistance changes when subjected to
a magnetic field. Unlike anisotropic magneto-resistive (AMR) sensors that rely on magnetic properties of
ferromagnetic materials, semiconductor magneto-resistors utilize the magneto-resistance effect in
semiconductor materials.
This results in a larger change in resistance under the influence of a magnetic field compared to metallic
counterparts like AMR sensors.
•Principle
•Magneto resistive effect in semiconductor materials.
•Similar to AMR, it is made from semiconductor materials that offer higher sensitivity.
•Characteristics
•Smaller size compared to traditional magneto-resistive sensors
•High sensitivity and accuracy
•Applications
•Precision magnetic field measurements
•Position and speed sensing
Key Points
• Material: Semiconductor magneto-resistors are typically made from materials like
indium antimonide (InSb) or indium arsenide (InAs), which exhibit high magneto-
resistance. These materials are chosen because their charge carriers (electrons and
holes) are highly sensitive to magnetic fields.
• Magneto-Resistance Effect: In the presence of a magnetic field, the path of charge
carriers in semiconductors (electrons and holes) is deflected due to the Lorentz force.
This deflection increases the path length and scattering events, effectively increasing the
resistance of the material. The change in resistance is proportional to the strength of the
magnetic field.
• Output: Similar to other magneto-resistive devices, semiconductor magneto-resistors
typically produce an analog output, where the resistance changes continuously with
variations in the magnetic field.
• Sensitivity: Semiconductor magneto-resistors tend to have much higher sensitivity to
magnetic fields than metallic magneto-resistive sensors (e.g., AMR or GMR sensors). This
makes them ideal for detecting very weak magnetic fields or small changes in field
strength.
Applications
• Magnetic Field Sensing: Due to their high sensitivity, semiconductor magneto-
resistors are often used to detect small changes in magnetic fields in applications
such as magnetic field mapping and detection of geomagnetic fields.
• Current Sensing: These resistors can be used to measure current by detecting the
magnetic field generated by current-carrying conductors, especially in cases
where precise and sensitive measurements are required.
• Position and Rotation Sensors: Semiconductor magneto-resistors can detect
changes in magnetic fields due to the movement of magnetic objects, making
them useful in applications like position sensors and rotational speed detectors
(e.g., for motor speed sensing).
• Magnetic Read Heads: Semiconductor magneto-resistors can be used in
magnetic read heads for data storage devices, such as hard disk drives, to detect
the magnetic data stored on the medium.
Photoresistors (LDRs)
•Basic Characteristics
•Resistivity changes with light intensity
•Light-dependent resistors that change resistance based on light intensity.
•Types
•Standard Photoresistors: General-purpose, used in various light sensing
applications
•Silicon Photoresistors: More sensitive and faster response
•Applications
•Automatic lighting systems (e.g., street lights)
•Light meters and cameras
LIGHT-DEPENDENT RESISTORS
• The resistance of the photoresistor decreases for the luminosity (light) received on the sensitive
surface of the component.
• A photoresistor produces the photoconductivity. Hence, the phenomenon of photoconductivity is
defined as the resistance of the photoresistor decreasing concerning the increase in incident light
intensity.
• When the incident light on the photoresistor goes beyond a certain frequency, photons will be
absorbed by the semiconductor, giving bound electrons enough energy to jump to the conduction
band. So, the resulting free electron-hole pairs will be responsible for conducting the electricity,
thereby lowering the resistance. The resistance and sensitivity of the photoresistor can vary among
dissimilar devices.
• The energy needed to raise electrons from the valence to the conduction band can be provided by
external energy sources other than heat for example, by optical radiation or by an electric voltage.
• The energy E and frequency f of optical radiation are related by
where ‘A’ and ‘’ depend on the material and on manufacturing parameters
Some Characteristics of Visible and Infrared LDRs
Sensitivity
• Photodiode or phototransistor are more sensitive to light than photoresistor.
• Photodiode and phototransistor are semiconductor devices; photoresistor is a passive electronic component
that doesn't have a PN junction.
• The photoresistivity of a photoresistor is varied depending on the ambient temperature, and hence, it is not
suitable for applications that demand precise measurement of or sensitivity to light photons.
Latency
• Between changes in illumination and changes in resistance, there would be a time delay. This is called the
resistance recovery rate.
• When the light is applied after total darkness, it takes about 10 ms for the resistance to drop, but up to 1 s
for the resistance to rise to its starting value after the light is removed completely. Due to this reason, LDR
cannot be used in applications where rapid light fluctuation needs to be recorded.
Construction
• A photoresistor is constructed by mounting a thin, zigzag-shaped
photosensitive device on the insulating material.
• Cadmium Sulfide (CdS), Cadmium Selenide (CdSe), and Lead Sulfide are the
materials used in photoresistors and are sensitive to light.
• Ceramic is the insulating material used in photoresistors. The metal films
are connected with terminal leads.
• The complete structure of the photoresistor is placed either in a plastic
case or resin case to avoid direct sunlight exposure.
• In the absence of light, very high resistance will be there, and it is about
mega ohms. When the light is incident on the photoresistor, there will be a
decrease in resistance and an increase in conductivity as well.
Working of LDR
• Photoresistors work based off of the principle of photoconductivity.
Photoconductivity is an optical phenomenon in which the material’s
conductivity is increased when light is absorbed by the material
• When light falls i.e. when the photons fall on the device, the electrons in the
valence band of the semiconductor material are excited to the conduction
band. These photons in the incident light should have energy greater than the
bandgap of the semiconductor material to make the electrons jump from the
valence band to the conduction band
• Hence when light having enough energy strikes on the device, more and more
electrons are excited to the conduction band which results in a large number
of charge carriers
• The result of this process is more and more current starts flowing through the
device when the circuit is closed and hence it is said that the resistance of the
device has been decreased
Scintillation Detectors
• They work by using a scintillator material that emits visible light when struck by
radiation. The light is then converted into an electrical signal, which can be processed
and measured.
• The core component of a scintillation detector is the scintillator material, which emits
flashes of light (photons) when it absorbs ionizing radiation.
• Scintillators can be organic (e.g., plastic or liquid scintillators) or inorganic (e.g., crystals
like sodium iodide, cesium iodide, or bismuth germanate).
• When ionizing radiation (such as X-rays or gamma rays) enters the scintillator, it excites
the atoms in the material, causing them to release energy in the form of visible or
ultraviolet light.
• The amount of light produced is proportional to the energy of the incoming radiation.
• The light emitted by the scintillator is then collected by a photodetector, such as a
photomultiplier tube (PMT) or a photodiode.
• The electrical pulse generated by the photodetector is processed and analyzed to
determine the characteristics of the radiation.
• The strength of the pulse is proportional to the energy of the detected radiation, which
allows for energy discrimination and spectral analysis.
Advantages
• High Sensitivity: Ideal for detecting low levels of radiation.
• Energy Resolution: Allows to discriminate between different radiation
energies.
• Fast Response: Helps to detect radiation events in real time, which is
critical in applications like medical imaging or nuclear physics experiments
• Versatility: Detect a wide range of radiation types, including gamma rays,
X-rays, beta particles, and even some neutrons.
• Scalability: Can be produced in various shapes and sizes, making them
suitable for small portable detectors or large detectors used in research
experiments.
Photodetector
• Photodiode detectors are semiconductor-based devices that are used to detect
X-rays by converting the incident radiation into electrical signals.
Direct Detection:
• Directly detect X-rays by converting the radiation into electron-hole pairs in the
semiconductor material.
• Suitable for low energy X-rays
Indirect Detection:
• To detect higher-energy X-rays, a scintillator material is often placed in front of
the photodiode.
• The scintillator converts X-rays into visible light, which the photodiode then
detects.
Types of Photodetectors for X rays
• Silicon Photodiodes (Si)-Lower-energy X-rays (soft X-rays).
• Gallium Arsenide (GaAs) Photodiodes-detecting higher-energy X-rays
Working
• A photodiode is a semiconductor device, typically made of materials like silicon
(Si) or gallium arsenide (GaAs)
• The device consists of a p-n junction, where a p-type (positive) semiconductor
material meets an n-type (negative) semiconductor. This junction is where the
radiation detection occurs.
• When X-rays strike the photodiode, they interact with the atoms in the
semiconductor material, ionizing them and generating electron-hole pairs.
• Each X-ray photon with sufficient energy knocks electrons out of their atoms,
creating free electrons and positively charged "holes.“
• The free electrons move toward the anode (positive terminal), and the holes
move toward the cathode (negative terminal), creating a current proportional
to the energy and intensity of the incoming X-rays.
• The magnitude of the current is proportional to the number of X-ray photons
absorbed by the photodiode, and thus the X-ray intensity.
Applications
•Structural health monitoring (e.g., bridges and buildings)
•Temperature and pressure sensing in harsh environments
Textbooks
• Patranabis, A. (2013). Sensors and Actuators, 2nd Edition, PHI.
• de Silva, C. W. (2015). Sensors and Actuators - Engineering System
Instrumentation, 2nd Edition, CRC Press.
Introduction
• Wheel Speed Sensors: Wheel speed sensors are crucial components of the
Anti-lock Braking System (ABS). They are responsible for detecting any
significant variation in wheel rotation speed compared to others, which could
indicate potential wheel lock-up during braking. By monitoring wheel speeds,
ABS can prevent skidding and maintain control, thereby enhancing braking
performance and vehicle safety.
Figure 7: Wheel Speed Sensors