Introduction to semiconductor device
Introduction to semiconductor device
Structure of atom
An atom consists of a central nucleus surrounded by orbiting electrons.
The nucleus consists of positively charged particles called protons and
uncharged particles called neutrons.
Electrons have negative charge
No of protons = No of electrons
Atomic number
The atomic number equals the number of protons in the nucleus, which
is the same as the number of electrons.
ELECTRONS AND SHELLS
In an atom, the orbits are grouped into energy levels known as shells.
The maximum number of electrons in each shell= 2n^2
The maximum number of electrons :
1rst shell=2
2nd shell =8
3rd shell =18
4th shell=32
Valence shell
Electrons with the highest energy exist in the outermost shell of an atom
and are relatively loosely bound to the atom. This outermost shell is
known as the valence shell and electrons in this shell are called valence
electrons.
When a valence electron gain sufficient energy from an external source,
so they can easily jump to higher energy shells. The escaped valence
electron is called a free electron.
The energy level measured in electron volt(eV)
Energy band
In a material there are 2 distinct energy bands- valence band and
conduction band
The 2 bands are separated by an energy gap called forbidden energy
gap(Eg)
The difference in energy between the valence band and the conduction
band is called an energy gap or band gap
Higher energy level band is the conduction band
Covalent bonds: Each silicon atom positions itself with 4 adjacent silicon
atoms to form a silicon crystal. A silicon atom with its 4 valence
electrons shares an electron with each of its neighbors.
Semiconductor
Semiconductor are divided into 2 types
Intrinsic semiconductor and extrinsic semiconductor
Intrinsic semiconductor
P type semiconductor
When a small amount of trivalent impurity is added to a pure
semiconductor, it is known as p type semiconductor.
The trivalent atoms are Boron, Aluminum, Gallium
Each boron has 3 electrons in its valence shell, these electrons make a
covalent bond with neigboring atoms
Each boron surrounded by 4 si atoms, but boron has 3 electrons, which
make a covalent bond to neighboring atom
There is an deficiency of an electron around the boron atom , these
deficiency create a hole.
So boron atom will receive an electron from neighboring covalent bond
and fill eight electrons. In this condition boron gets -1 charge and
becomes –vely charged immobile ion.
Holes are majority carriers.
Electrons are minority carriers.
Negative charged immobile ions
PN junction diode
Reverse biasing
3. Reverse bias: When a diode is connected in a Reverse Bias condition, a
positive voltage is applied to the N type material and a negative voltage
is applied to the P-type material.
The positive voltage applied to the N-type material attracts electrons
towards the positive electrode, while the holes in the P-type end are
also attracted away from the junction towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of
electrons and holes and presents a high impedance path, almost an
insulator and a high potential barrier is created across the junction thus
preventing current from flowing through the semiconductor material.
Increase in the Depletion Layer due to Reverse Bias
here is a current flow due to minority carries . This current is called
Reverse Saturation current
The current of minority carriers is very small compare to majority
carriers.
Reverse breakdown: we have seen that PN junction allows a very small
current to flow when it is reverse biased. This current is due to the
movement of minority carriers,
It is almost independent of the voltage applied
How ever if the reverse voltage made too high, the current through the
PN junction increases abruptly
The voltage at which the phenomenon occurs is called Reverse
breakdown
Breakdown Mechanism
There are 2 processes which can cause junction breakdown
Zener breakdown and Avalanche breakdown