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Introduction to semiconductor device

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23 views8 pages

Introduction to semiconductor device

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abhijasatheesh
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Introduction to semiconductor device

Structure of atom
An atom consists of a central nucleus surrounded by orbiting electrons.
The nucleus consists of positively charged particles called protons and
uncharged particles called neutrons.
Electrons have negative charge
No of protons = No of electrons

Atomic number
The atomic number equals the number of protons in the nucleus, which
is the same as the number of electrons.
ELECTRONS AND SHELLS
In an atom, the orbits are grouped into energy levels known as shells.
The maximum number of electrons in each shell= 2n^2
The maximum number of electrons :
1rst shell=2
2nd shell =8
3rd shell =18
4th shell=32

Valence shell
Electrons with the highest energy exist in the outermost shell of an atom
and are relatively loosely bound to the atom. This outermost shell is
known as the valence shell and electrons in this shell are called valence
electrons.
When a valence electron gain sufficient energy from an external source,
so they can easily jump to higher energy shells. The escaped valence
electron is called a free electron.
The energy level measured in electron volt(eV)

Energy band
In a material there are 2 distinct energy bands- valence band and
conduction band
The 2 bands are separated by an energy gap called forbidden energy
gap(Eg)
The difference in energy between the valence band and the conduction
band is called an energy gap or band gap
Higher energy level band is the conduction band

Insulators, Conductors, Semiconductors


Insulator
An insulator is a material that does not conduct electrical current under
normal conditions
Insulators have very wide forbidden energy gap(>5eV)
Conductors
A conductor is a material that easily conducts electrical current. Most
metals are good conductors
There is no forbidden energy gap between valence band and conduction
band, they have overlap each other.
Semiconductors
Semiconductor has neither good conductor nor good insulators.
The forbidden energy gap of semiconductor is not wide approximately 1
Ev
Silicon and germanium are widely used

Crystaline structure of semiconductor atom


If the outermost shell of an atom has 8 electrons, It is said to be filled. It
then become stable structure.
In case of silicon or germanium, has only 4 electrons in the outermost
shell. To fill the valance shell, each atom require 4 more electron. This is
done by haring of one electron from each of the 4 neighboring atoms.

Covalent bonds: Each silicon atom positions itself with 4 adjacent silicon
atoms to form a silicon crystal. A silicon atom with its 4 valence
electrons shares an electron with each of its neighbors.

Semiconductor
Semiconductor are divided into 2 types
Intrinsic semiconductor and extrinsic semiconductor
Intrinsic semiconductor

A semiconductor in an extremely pure form is known as an intrinsic


semiconductor
At absolute zero. Intrinsic s.c behaves as perfect insulator
When an electron break a covalent bond and moves away. A vacancy is
created in the broken covalent bond. This vacancy is called hole.
When ever free electron is generated, a hole is created simultaneously.
That is free electron and holes always electron and holes always
generated in pairs.
Extrinsic semiconductor
A semiconductor in impure form is known as an extrinsic semiconductor
This is achieved by adding a small amount of suitable impurity to a
semiconductor. It is called impurity or extrinsic semiconductor.
The process of adding impurities to a semiconductor is known as doping.
When a small amount of pentavalent impurity is added to a pure
semiconductor. It is known as n-type semiconductor.
The pentavalent impurities are Phosphorous, Arsenic, Antimony
N type semiconductor
The phosphorous atom have 5 electrons in valence shell, 4 of them make
covalent bond to surrounding atoms. So one of the electron cannot be
make any bond with neighboring atoms, which will more freely in the
crystalline structure.
In an N-type semiconductor. At room temperature, the impurity atom
donates electrons in to crystalline structure, so impurity atom is called
donor atom.
The donated electrons called excess electrons.
The phosphorous atom donates one electron in to crystalline structure
and becomes +1 charged ion. This ion is tightly bonded, so it is called
immobile ions.
Electrons are majority carriers.
Holes are minority carriers.
+ve charged immobile ions

P type semiconductor
When a small amount of trivalent impurity is added to a pure
semiconductor, it is known as p type semiconductor.
The trivalent atoms are Boron, Aluminum, Gallium
Each boron has 3 electrons in its valence shell, these electrons make a
covalent bond with neigboring atoms
Each boron surrounded by 4 si atoms, but boron has 3 electrons, which
make a covalent bond to neighboring atom
There is an deficiency of an electron around the boron atom , these
deficiency create a hole.
So boron atom will receive an electron from neighboring covalent bond
and fill eight electrons. In this condition boron gets -1 charge and
becomes –vely charged immobile ion.
Holes are majority carriers.
Electrons are minority carriers.
Negative charged immobile ions
PN junction diode

Diode is a semi conductor device formed by joining P-type and N-type


semi conductor material together.
It is a two terminal device with positive and negative regions.
The positive and negative regions of the diode are the component's
anode and cathode respectively.
When the two blocks ie p-type and n-type materials are placed nearer to
each other, the electrons and holes diffuse towards the region of lower
concentration from the region of higher concentration.
In the process of diffusion, electrons from N region diffuse towards the P
region whereas holes from P region diffuse towards the N region. The
electrons from N region recombine with the acceptor atoms in P region
and become negatively charged immobile atoms near the junction.
Similarly once holes enter the N region, they will recombine with donor
atoms and become positively charged immobile atoms near the junction.

As a result, a large number of positively charged ions are produced at


the junction on the N side and a large number of negatively charged ions
are produced at the junction on P side i.e the region is depleted of
charge carriers.So it is known as depletion region. This depletion region
has positive and negative charges close to each other.
This develops a potential(Barrier potential) of about 0.7V for silicon
diodes across the depletion region. 0.3V in case of Germanium diodes.

PN junction diode working(Bias)


1. Zero Bias – No external voltage is applied to the PN junction diode.
Forward biasing
2.Forward bias:In the forward bias condition, the negative terminal of
the battery is connected to the N-type material and the positive terminal
of the battery is connected to the P-Type material.
Electrons from the N-region cross the junction and enters the P-region.
Due to the attractive force that is generated in the P-region the
electrons are attracted and move towards the positive terminal.
Simultaneously the holes are attracted to the negative terminal of the
battery. By the movement of electrons and holes current flows in the
diode.
In this condition, the width of the depletion region decreases due to the
reduction in the number of positive and negative ions.

V-I Characteristics of forward bias

By supplying positive voltage, the electrons get enough energy to


overcome the potential barrier (depletion layer) and cross the junction
and the same thing happens with the holes as well.
The amount of energy required by the electrons and holes for crossing
the junction is equal to the barrier potential 0.3 V for Ge and 0.7 V for Si,
1.2V for GaAs. This is also known as Voltage drop or cutin voltage or
knee voltage.

Reverse biasing
3. Reverse bias: When a diode is connected in a Reverse Bias condition, a
positive voltage is applied to the N type material and a negative voltage
is applied to the P-type material.
The positive voltage applied to the N-type material attracts electrons
towards the positive electrode, while the holes in the P-type end are
also attracted away from the junction towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of
electrons and holes and presents a high impedance path, almost an
insulator and a high potential barrier is created across the junction thus
preventing current from flowing through the semiconductor material.
Increase in the Depletion Layer due to Reverse Bias
here is a current flow due to minority carries . This current is called
Reverse Saturation current
The current of minority carriers is very small compare to majority
carriers.
Reverse breakdown: we have seen that PN junction allows a very small
current to flow when it is reverse biased. This current is due to the
movement of minority carriers,
It is almost independent of the voltage applied
How ever if the reverse voltage made too high, the current through the
PN junction increases abruptly
The voltage at which the phenomenon occurs is called Reverse
breakdown

V-I Characteristics of Reverse biasing


Due to thermal energy, minority(a hole in N-type material and electrons
in P-type material) carriers are produced in crystal. These minority
carriers are pushed towards P-N junction by the negative terminal and
positive terminal, respectively.
Due to the movement of minority carriers, a very little current flows,
which is in nano Ampere range (for silicon). This current is called as
reverse saturation current..
When the reverse voltage is increased beyond the limit, then the reverse
current increases drastically. This particular voltage that causes the
drastic change in reverse current is called reverse breakdown voltage.
Diode breakdown occurs by two mechanisms: Avalanche breakdown and
Zener breakdown.
V-I Characteristics of PN junction diode

Breakdown Mechanism
There are 2 processes which can cause junction breakdown
Zener breakdown and Avalanche breakdown

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