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12 views

2SC2922

Uploaded by

5thmarketingmz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2922

DESCRIPTION
With MT-200 package
Complement to type 2SA1216

APPLICATIONS
Audio and general purpose

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 180 V

VCEO Collector-emitter voltage Open base 180 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 17 A

IB Base current 5 A

PC Collector power dissipation TC=25 200 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2922

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 180 V

VCEsat Collector-emitter saturation voltage IC=8A IB=0.8A 2.0 V

ICBO Collector cut-off current VCB=180V; IE=0 100 A

IEBO Emitter cut-off current VEB=5V; IC=0 100 A

hFE DC current gain IC=8A ; VCE=4V 30

Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF

fT Transition frequency IC=2A ; VCE=12V 50 MHz

Switching times

ton Turn-on time 0.20 s

IC=10A;RL=4
ts Storage time IB1=- IB2=1A 1.30 s
VCC=40V

tf Fall time 0.45 s

‹ hFE classifications

O Y P G

30-60 50-100 70-140 90-180

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2922

PACKAGE OUTLINE

Fig.2 outline dimensions

3
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2922

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