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Electronics syllabus msc 1sem

Lpu ist sem electronics syllabus

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26 views2 pages

Electronics syllabus msc 1sem

Lpu ist sem electronics syllabus

Uploaded by

sajidyousufone
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PHY524:ELECTRONIC DEVICES

L:4 T:0 P:0 Credits:4

Course Outcomes: Through this course students should be able to

CO1 :: understand the structures, working principles, and material properties of various
transistors (BJT, FET, MESFET, MOSFET, etc.) and microwave devices.

CO2 :: assess the performance and suitability of photonic devices, such as photodiodes, solar
cells, LEDs and semiconductor lasers based on their optical absorption, luminescence, and
photoconductivity properties.

CO3 :: demonstrate understanding of IC fabrication processes (epitaxial growth, diffusion,


masking, etching) and the operation of different IC types (SRAM, DRAM, CMOS, NMOS, non-
volatile-NMOS, magnetic, optical, ferroelectric, CCD).
CO4 :: appraise the application of the principles of magneto-optics, electro-optics, acousto-
optics, and liquid crystals in device applications.

Unit I
Transistors : JFET Structure and Working, BJT Structure and Working, MESFET Structure and
Working, Derivations of the equations for I-V characteristics under different conditions, High
frequency limits, MOSFET Structure and Working
Unit II
Microwave Devices : Microwave Devices:Tunnel diode, Avalanche transit time devices, IMPATT
diodes, Parametric devices, capacitance of pn junctions, varactor diode, the transferred electron
mechanism, formation and drift of space charge domains, degenerate semiconductors, Transfer
electron devices (Gunn diode)
Unit III
Photonic Devices : Photonic devices: Radiative and non-radiative transitions, Optical absorption,
Solar cell-(Open circuit voltage and short circuit current, fill factor), luminescence, carrier lifetime,
photo conductivity, metal semiconductor photo diode, avalanche photo diode, Bulk and thin film
Photoconductive devices (LDR), photo detectors (gain, spectral response, time response)
Unit IV
LED and LD's : light emitting materials, LED characteristics, photon flux, lasers, conditions of
population inversion at a pn junction, emission spectra, semiconductor lasers, hetero junction lasers,
fibre optic communications, laser amplification, optical confinement, carrier confinement, LED
operation
Unit V
Integrated circuits (IC) and memory devices : basic ideas of integrated circuit, epitaxial growth,
diffusion, masking, etching, monolithic IC, static random access memories SRAM, dynamic random
access memories DRAM, CMOS, NMOS, non-volatile-NMOS, magnetic memories, optical memories,
ferroelectric memories, charge coupled devices (CCD)
Unit VI
Other Electronic Devices : Magneto-optic effect, Material properties related to get these effects,
principle of electro-optics, Kerr's effect, electro-optic modulator and scanner, principle of acousto-
optics, interaction of light and sound, Bragg's diffraction, acousto-optic modulator and scanner, liquid
crystals and their device applications

Text Books:
1. SEMICONDUCTOR DEVICES-PHYSICS AND TECHNOLOGY by S.M. SZE, WILEY

References:
1. SOLID STATE ELECTRONIC DEVICES by B.G. STREETMAN, PRENTICE HALL

2. INTEGRATED ELECTRONICS:ANALOG AND DIGITAL CIRCUITS AND SYSTEMS by JACOB


MILLMAN, CHRISTOS C. HALKIAS, MC GRAW HILL

Session 2023-24 Page:1/2


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