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[EE362(B)] HW 3_solution

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[EE362(B)] HW 3_solution

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24mattew
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[EE 362(B)] HW#3

1. Consider a silicon pn junction diode with an applied reverse-biased voltage of 𝑉𝑉𝑅𝑅 =


5V. The doping concentrations are 𝑁𝑁𝑎𝑎 = 𝑁𝑁𝑑𝑑 = 4 × 1016 cm−3 and the cross-sectional area
is A = 10−4 cm2. Assume minority carrier lifetimes of 𝜏𝜏0 = 𝜏𝜏𝑛𝑛0 = 𝜏𝜏𝑝𝑝0 = 10−7 s, 𝐷𝐷𝑛𝑛 =
25 cm2 /𝑠𝑠 and 𝐷𝐷𝑝𝑝 = 10 cm2 /𝑠𝑠.Calculate the (a) ideal reverse-saturation current, (b)
reverse-biased generation current, and (c) the ratio of the generation current to ideal
saturation current. (Assume that T=300K)

Sol)

(a)

1 𝐷𝐷𝑛𝑛 1 𝐷𝐷𝑝𝑝
𝐼𝐼𝑠𝑠 = Ae𝑛𝑛𝑖𝑖2 � � + � �
𝑁𝑁𝑎𝑎 𝜏𝜏𝑛𝑛0 𝑁𝑁𝑑𝑑 𝜏𝜏𝑝𝑝0

1 25 1 10
= (10−4 )(1.6 × 10−19 )(1.5 × 1010 )2 × � 16
� −7 + 16
� −7 �
4 × 10 10 4 × 10 10

𝐼𝐼𝑠𝑠 = 2.323 × 10−15 A

(b)
Aeni 𝑊𝑊
𝐼𝐼𝑔𝑔𝑔𝑔𝑔𝑔 =
2𝜏𝜏0

We find,

(4 × 1016 )(4 × 1016 )


𝑉𝑉𝑏𝑏𝑏𝑏 = (0.0259) ln � �
(1.5 × 1010 )2
= 0.7665 V

and
1
2ϵs (Vbi + VR ) Na + 𝑁𝑁𝑑𝑑 2
W=� � ��
e 𝑁𝑁𝑎𝑎 𝑁𝑁𝑑𝑑
1
2(11.7)(8.85 × 10−14 )(0.7665 + 5) 4 × 1016 + 4 × 1016 2
=� × � ��
1.6 × 10−19 (4 × 1016 )(4 × 1016 )
= 6.109 × 10−5 cm

Then,
(10−4 )(1.6 × 10−19 )(1.5 × 1010 )(6.109 × 10−5 )
𝐼𝐼𝑔𝑔𝑔𝑔𝑔𝑔 = = 7.331 × 10−11 𝐴𝐴
2(10−7 )

(c)

𝐼𝐼𝑔𝑔𝑔𝑔𝑔𝑔 7.331 × 10−11


= = 3.16 × 104
𝐼𝐼𝑠𝑠 2.323 × 10−15

2. A one-sided p+n silicon diode has doping concentrations of 𝑁𝑁𝑎𝑎 = 4 × 1017 cm−3 and
𝑁𝑁𝑑𝑑 = 8 × 1015 cm−3 . The diode cross-sectional area is A = 5 × 10−4 cm2. 𝐷𝐷𝑛𝑛 = 25 cm2 /𝑠𝑠
and 𝐷𝐷𝑝𝑝 = 10 cm2 /𝑠𝑠. The maximum diffusion capacitance is to be limited to 1 nF.
Determine (i) the maximum current through the diode, (ii) the maximum forward-bias
voltage, and (iii) the diffusion resistance. (Assume that T=300K, 𝜏𝜏𝑝𝑝0 = 10−7 𝑠𝑠)

Sol)

𝑁𝑁𝑎𝑎 ≫ 𝑁𝑁𝑑𝑑 ⟹ 𝐼𝐼𝑝𝑝0 ≫ 𝐼𝐼𝑛𝑛0

(i)

𝐼𝐼𝑝𝑝0 𝜏𝜏𝑝𝑝0
𝐶𝐶𝑑𝑑 =
2𝑉𝑉𝑡𝑡

or

2𝑉𝑉𝑡𝑡 (𝐶𝐶𝑑𝑑 ) 2(0.0259)(10−9 )


𝐼𝐼𝑝𝑝0 = = = 5.18 × 10−4 A = 0.518 mA
𝜏𝜏𝑝𝑝0 10−7

(ii)

𝐷𝐷𝑝𝑝 n2i Va
𝐼𝐼𝑝𝑝0 = 𝐴𝐴𝐴𝐴� ∙ exp � �
𝜏𝜏𝑝𝑝0 Nd Vt

10 (1.5 × 1010 )2 Va
0.518 × 10−3 = (5 × 10−4 )(1.6 × 10−19 )� −7 ∙ 15
exp � �
10 8 × 10 Vt

0.518 × 10−3
𝑉𝑉𝑎𝑎 = (0.0259) ln � �
2.25 × 10−14
= 0.618 V

(iii)

Vt 0.0259
𝑟𝑟𝑑𝑑 = = = 50 Ω
𝐼𝐼𝐷𝐷 0.518 × 10−3

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