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CVD Lesson

ترسيب البخار الكيميائي

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12 views

CVD Lesson

ترسيب البخار الكيميائي

Uploaded by

fstep606
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Introduction to Nanotechnology and

Nanoengineering Lesson

Chemical Vapour Deposition (CVD)


CHEMICAL VAPOUR DEPOSITION (CVD)
CVD is the formation of a non-volatile solid film on a substrate by the
reaction of vapor phase chemicals (reactants) that contain the required
constituents.

The reactant gases are introduced into a


reaction
chamber and are decomposed and reacted
at a heated surface to form the thin film.
Chemical vapor deposition (CVD) results
from the chemical reaction of gaseous
precursor(s) at a heated substrate to yield a
fully dense deposit. Ultramet uses CVD to
apply refractory metals and ceramics as thin
coatings on various substrates and to
produce freestanding thick-walled structures.

Some examples
Metal deposition

metal halide (g) → metal(s) + byproduct (g)

Ceramic deposition

metal halide (g) + oxygen/carbon/nitrogen/boron source (g) →


ceramic(s) + byproduct (g)
Layered CVD ceramic coating Microstructure of high-emittance black
(top) conforms closely to rhenium coating showing pyramidal
underlying substrate to create a dendrites formed by CVD
robust bond at the interface.
CVD Steps

1. Transport of reactants by forced convection to the deposition region.


2. Transport of reactants by diffusion from the main gas stream through the boundary
layer to the wafer surface.
3. Adsorption of reactants on the wafer
surface.

4. Surface processes, including


chemical decomposition or reaction,
surface migration to attachment sites
(such as atomic-level ledges and kinks),
site incorporation, and other surface
reactions.

5. Desorption of byproducts from the


surface.

6. Transport of byproducts by diffusion


through the boundary layer and back to
the main gas stream.

7. Transport of byproducts by forced


convection away from the deposition
region.
Advantages:
• High growth rates possible
• Can deposit materials which are hard to evaporate
• Good reproducibility
• Can grow epitaxial films
(Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate.
The overlayer is called an epitaxial film or epitaxial layer)

Disadvantages
• high temperatures
• complex processes
• toxic and corrosive gasses
Graphene production with CVD
APPLICATIONS ON
• Coatings –
Such as wear resistance,
Corrosion resistance,
High temperature protection,
Erosion protection and
Combinations thereof.
• Semiconductors and related devices –
Integrated circuits,
Sensors and
Optoelectronic devices
• Dense structural parts – CVD can be used to produce components that
are difficult or uneconomical to produce using conventional fabrication
techniques.
• Optical Fibers – For telecommunications.
• Composites – Preforms can be infiltrated using CVD techniques to produce
ceramic matrix composites such as carbon-carbon, carbon-silicon carbide and
silicon carbide-silicon carbide composites. This process is sometimes called
chemical vapour infiltration or CVI.

• Powder production – Production of novel powders and fibers


• Catalysts
• Nano machines
Top left, mirror fabricated entirely
by CVD of silicon carbide foam with
Left, large freestanding solid rhenium thruster a polished silicon carbide
(19" high × 10" diameter at base) fabricated by facesheet; bottom left, rhenium-
CVD, demonstrating Ultramet’s scale-up coated graphite spheres; right,
expertise; top right, freestanding parts of solid iridium-lined rhenium thrust
rhenium, tantalum, and tungsten formed by chamber with niobium flanges, all
CVD; bottom right, monolithic CVD rhenium fabricated by CVD.
thrust chambers for tactical propulsion
applications.
TYPES OF CVD

• Hot-wall thermal CVD (batch operation type)


• Plasma assisted CVD
• Atmospheric pressure CVD (APCVD) – CVD process at atmospheric
pressure.
• Low-pressure CVD (LPCVD) – CVD process at sub-atmospheric pressures.
Reduced pressures tend to reduce unwanted gas-phase reactions and improve
film uniformity across the wafer.
• Ultrahigh vacuum CVD (UHVCVD) – CVD process at very low pressure,
typically below 10−6 Pa (~10−8 torr). Note that in other fields, a lower division
between high and ultra-high vacuum is common, often 10−7 Pa.
Hot-wall CVD reactor rig at
Ultramet
• Aerosol assisted CVD (AACVD)
• Direct liquid injection CVD (DLICVD)
• Microwave plasma-assisted CVD (MPCVD)
• Plasma-Enhanced CVD (PECVD)
• Remote plasma-enhanced CVD (RPECVD)
• Atomic layer CVD (ALCVD)
• Combustion Chemical Vapor Deposition (CCVD)
• Hot wire CVD (HWCVD) –
• Hybrid Physical-Chemical Vapor Deposition (HPCVD)
• Metalorganic chemical vapor deposition (MOCVD)
• Rapid thermal CVD (RTCVD)
CVD APPARATUS
• Gas delivery system – For the supply of precursors to the reactor chamber
• Reactor chamber – Chamber within which deposition takes place
• Substrate loading mechanism – A system for introducing and removing
substrates, mandrels etc.
• Energy source – Provide the energy/heat that is required to get the precursors
to react/decompose.
• Vacuum system – A system for removal of all other gaseous species other
than those required for the reaction/deposition.
• Exhaust system – System for removal of volatile by-products from the
reaction chamber.
• Exhaust treatment systems – In some instances, exhaust gases may
not be suitable for release into the atmosphere and may require
treatment or conversion to safe/harmless compounds.
• Process control equipment – Gauges, controls etc.. to monitor process
parameters such as pressure, temperature and time. Alarms and
safety devices would also be included in this category.

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