Chapter 8
Chapter 8
Chapter 8
Scanning Transmission Electron Microscopy
(STEM)
• Principles of STEM
• Ronchigram
• Cs-Corrector
• Principles of STEM
• Ronchigram
• Cs-Corrector
The Ring of
Infinite Radial
Magnification
The Ring of
Infinite Angular
Magnification
(Azimuthal circles)
uncorrected Cs-corrected
• Principles of STEM
• Ronchigram
• Cs-Corrector
w/o Cs
correction
w/ Cs
correction
w/ Cs correction
• Without Cs corrector
- r is 0.2-3 nm (depending on the
accelerate voltage)
• With Cs corrector
- r is 0.06-0.08 nm
Specimen
Name: JEM-ARM200FTH
Accelerate Voltage: 80/200 kV
Electron Source: Cold type Field Emission Gun
(CFEG) with EDS detector (Oxford X-Max) and
CEOS aberration corrector(CESCOR)
Resolution
200KV
TEM Lattice resolution: 72 pm
STEM DF image: 78 pm
STEM BF image: 0.136 nm
80KV
TEM Lattice resolution: 0.102 nm
STEM DF image: 0.136 nm
STEM BF image: 0.136 nm
• Principles of STEM
• Ronchigram
• Cs-Corrector
BF STEM image
Sr
O
Ti
(100) SrTiO3
NbC precipitates
ADF STEM
Shift
A
B
TEM A
B
A
B
C
Stacking B
C
Fault B
Distortion
• The contrast in the ADF images is about the mass, thickness and atomic
numbers.
Twinned Si Nanowire
Delocalization
z y
c x b
Intensity (a.u.)
contrasts can be used for quantitative
elemental analysis.
0 2 4 6 8 10 12
Distance (nm)
• HAADF is not useful for imaging light atoms with heavy atoms, because the
contrast shows strong dependence to atomic number.
InGaN
InGaN
InGaN
GaN
GaN
GaN
[010]
BF image ADF image
• The contrast is reversed, but there is no difference between ADF and ABF
images for single-element materials.
[110] Ge
ABF image: Annular Bright Field ADF image: Annular Dark Field
@ Department of Materials Science and Engineering, NTHU 44
Annular Bright-Field (ABF) Imaging
GaN
The Stacking _
(0001)-N
A • N atoms lie on
B top of the Ga-N
A dumbbells
B indicating the
A Nitrogen polarity
B of GaN nanorod.
(0001)-Ga
Wurtzite Structure