IC2-Lecture5
IC2-Lecture5
ECE 430
VA VB Vout
0 0 1
1 0 0
0 1 0
1 1 0
1 𝐾𝑃 Inverter
𝑉𝑡𝑛 + (𝑉 − 𝑉𝑡𝑝 )
2 𝐾𝑁 𝐷𝐷
𝑉𝑡ℎ 𝑁𝑂𝑅2 =
1 𝐾𝑃 𝐾
1+ 𝑉𝑡𝑛 + 𝐾𝑃 (𝑉𝐷𝐷 − 𝑉𝑡𝑝 )
2 𝐾𝑁 𝑁
𝑉𝑡ℎ 𝐼𝑁𝑉 =
𝐾
1 + 𝐾𝑃
𝑁
If KN=KP, Vtn=|Vtp|
𝑉𝐷𝐷 + 𝑉𝑡𝑛
𝑉𝑡ℎ (𝑁𝑂𝑅2) =
3
Which is not equal to 𝑉𝐷𝐷 Τ2 as the inverter
The Vth of two-input NOR gate can be defined as
𝐾
𝑉𝑡𝑛 + 4𝐾𝑃 (𝑉𝐷𝐷 − |𝑉𝑡𝑝 |)
𝑁
𝑉𝑡ℎ (𝑁𝑂𝑅2) =
𝐾
1 + 4𝐾𝑃
𝑁
In the case of two-input NAND gate, the PDN network consists of two cascaded NMOS transistors while the PUN
network composed of two parallel PMOS transistors. The threshold Vth value can be defined as
𝐾
𝑉𝑡𝑛 + 2 𝐾𝑃 (𝑉𝐷𝐷 − |𝑉𝑡𝑝 |)
𝑁
𝑉𝑡ℎ (𝑁𝐴𝑁𝐷2) =
𝐾
1 + 2 𝐾𝑃
𝑁
𝑓 = 𝐴𝐵 + 𝐶𝐷 𝑓 = 𝐴𝐵 + 𝐶 𝑓 = 𝐴𝐵 + 𝐶(𝐷 + 𝐸)
Transistor sizing
❑ To estimate the sizing of CMOS circuits, the equivalent aspect ratio for any path contains n transistors (PMOS or
NMOS) can be defined as
𝑊 1
( )𝑒𝑞𝑠 =
𝐿 𝐿
σ𝑛𝑖=1( )𝑛
𝑊
𝑛
𝑊 𝑊
( )𝑒𝑞𝑝 = ( )𝑛
𝐿 𝐿
𝑖=1
𝑊 𝑊
where ( 𝐿 )𝑒𝑞𝑠 is equivalent aspect ratio of serially stacked transistors, ( 𝐿 )𝑒𝑞𝑝 is the equivalent aspect ratio of
parallel transistors
Example 4.1
𝑊 𝑊
Estimate the equivalent size of an CMOS circuit characterize the Boolean function of 𝑓 = 𝐴. 𝐵. 𝐶 + (𝐷. 𝐸). ( 𝐿 )𝑛 =12 and ( 𝐿 )𝑝 =20.
For PUN
𝑊 𝑊 𝑊 𝑊
( )𝑝𝐴𝐵𝐶 = + + = 3𝑥20 = 60
𝐿 𝐿 𝐴
𝐿 𝐵
𝐿 𝐶
𝑊 𝑊 𝑊
( )𝑝𝐷𝐸 = + = 2𝑥20 = 40
𝐿 𝐿 𝐷
𝐿 𝐸
𝑊 1 1
( )𝑝 = = = 24
𝐿 𝐿 𝐿 1 1
( )𝑝𝐴𝐵𝐶 + ( )𝑝𝐷𝐸 +
𝑊 𝑊 60 40
For PDN
𝑊 1
( )𝑛𝐴𝐵𝐶 = =4
𝐿 𝐿 𝐿 𝐿
+ 𝑊 + 𝑊
𝑊 𝐴 𝐵 𝐶
𝑊 1
( )𝑛𝐷𝐸 = =6
𝐿 𝐿 𝐿
+ 𝑊
𝑊 𝐷 𝐸
𝑊 𝑊 𝑊
( )𝑛 = + = 10
𝐿 𝐿 𝑛𝐴𝐵𝐶
𝐿 𝑛𝐷𝐸
End of Lecture