QUESTION BANK MID-2
QUESTION BANK MID-2
Descriptive questions
Semiconductors (UNIT-5)
31. Explain the formation of energy bands in solids.
32. Discuss the classification of solids based on energy bands.
33. Explain bond formation in intrinsic type semiconductors.
34. What is semiconductor? Explain the classification of semiconductors.
35. Explain bond formation in n-type semiconductors.
36. Explain bond formation in p-type semiconductors.
37. Distinguish between intrinsic and extrinsic type semiconductors with suitable examples.
38. Obtain an expression for the electrical conductivity of an intrinsic semiconductor.
39. Derive an expression for density of electrons in conduction band of an intrinsic
semiconductor.
40. Derive an expression for the density of holes in valence band of an intrinsic semiconductor.
41. Derive an expression for carrier concentration in n-type semiconductor.
42. Derive an expression for carrier concentration in p-type semiconductor.
43. Describe drift and diffusion currents in a semiconductor.
44. Deduce Einstein’s equation based on drift and diffusion currents.
45. Describe Hall Effect in semiconductors.
46. Write applications of Hall Effect.
47. Show that for p-type semiconductor the Hall coefficient RH=1/pe.
48. Show that for n-type semiconductor the Hall coefficient RH=-1/ne.
49. a) State two important applications of semiconductors b) The Hall coefficient of a specimen is
3.66x10-4m3c-1. Its resistivity is 8.93x10-3Ωm. Find carrier density.
50. a) Distinguish between p-type and n-type extrinsic semiconductors b) The Hall coefficient of
a specimen is 3.66x10-4m3c-1. Its resistivity is 8.93x10-3Ωm. Find mobility of charge carriers.
51. a) Provide examples of trivalent and pentavalent impurity atoms used in n-type and p-type
extrinsic semiconductors. b) Find the diffusion coefficient of electron in silicon at 300 K, if
µe is 0.19 m2/V-S (Given data KB=1.38X 10-23)