23ECE202_Assgt_01
23ECE202_Assgt_01
2024
Assignment # 1
(Note: Please note that the circuits of all the questions above are to be simulated and your results verified with
those obtained by your analysis.)
2. Consider the 𝐼𝐶 𝑣𝑠 𝑉𝐶𝐸 relationship of the BC547 BJT, as depicted in Fig. 2. A load line is also shown
superimposed on the V-I
characteristics. (i) Using 12
these 𝑉 − 𝐼 curves, bias the
10
BJT using a voltage divider
Collector Current Ic (mA)
Fig. 2
3. Design the circuit shown in Fig. 3, such that the quiescent drain current is 0.5
′𝑊
𝑘𝑛 𝑽𝑫𝑫
mA. The MOSFET is specified to have 𝑉𝑡 = 1. 5 𝑉 and = 2 𝑚𝐴/𝑉 2 . The
𝐿
channel length modulation effect can be neglected. Use 10 V for 𝑉𝐷𝐷 . Calculate
the change in drain current 𝐼𝐷 , when the MOSFET is replaced with another of
′𝑊
𝑹𝟑
𝑘𝑛 𝑹𝟏
the same but with 𝑉𝑡 = 2𝑉.
𝐿
𝑻𝟏
4. Design an NMOS amplifier to provide a 0.4 V peak output across a 20 𝑘Ω load
that can be used as a drain resistor. If a gain of 15 𝑉/𝑉 is required, what should 𝑹𝟐
be the value of 𝑔𝑚 ? Using a dc supply of 2 V, what should be the values of
𝐼𝐷 & 𝑉𝑂𝑉 ? What 𝑊/𝐿 ratio would you use, if 𝜇𝑛 𝐶𝑜𝑥 = 200 𝜇𝐴/𝑉 2 ? Assuming
𝑉𝑡 = 1.2 𝑉, determine 𝑉𝐺𝑆 .
Fig. 3
Note: