0% found this document useful (0 votes)
11 views4 pagesPYQ
analog electronics PYQ
Uploaded by
marvelcbe20Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
0% found this document useful (0 votes)
11 views4 pagesPYQ
analog electronics PYQ
Uploaded by
marvelcbe20Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
/ 4
Roll No.
Amrita Vishwa Vidyapeetham
Amrita School of Engineering, Coimbatore
B.Tech Degree Examinations — December 2023
Third Semester
Electronies and Communication Engineering
19ECE201 Analog Electronic Circuits
Duration: Three hours “Maximum Marks: 100
Course Outcomes (COs):
(0) ‘Course Outcomes
‘COO | Ability to analyze transistor (BIT and MOSFET) circuits
‘CO02 | ~ Ability to design amplifier circuits to given specifications
‘CO03 | Ability to understand and apply the concept of negative feedback in electronic cirouits
‘CO04 | Ability to analyse and apply current sourees in IC design
‘CO0S [Ability to understand the operation of differential amplifiers
Instructions:
1. All questions are mandatory AND to be answered in the same order as in the Question paper.
2. Unless otherwise specified, all components can be considered to be ideal.
3. In circuits using BJTs and MOSFETs, unless otherwise mentioned, the following values can be
assumed: Vz = 25 mV; Vegace = 0.6 V, Versar = 0.2 Vand V, = 1V.
4. All variables and terms used, if not explained, may be considered to have the same connotation as
in Microelectronic Circuits ~ Sedra & Smith, 7 ed, Oxford University Press.
5. Alllcircuit diagrams are to be neatly drawn using pencil and labelled.
1, Design a common emitter amplifier with a voltage gain |A,| = 25. You are provided with (i) a single
power supply of 10 V and (b) BJTs with a de current gain of 150. No resistor greater than 100 kis to
be used. [10 Marks}[CO2][BTL3]
2. Consider the circuit shown in Fig. 1. The BJT shown has a 8 = 100 and V.¢ = 10 V. The component
values are Ry = 100 kM; Ry = 10 KO; R, = 1kN& Ry = 100.0. The capacitors are large enough to
be considered short circuits in the frequency range of operation. Determine (i) the operating point of
the BIT; (ii) the voltage gain A, = v/v, (iii) How will the operation of the circuit change if Ry
increases to 220 k0.? (iv) Keeping R; = 100 kO, if R, is increased to 47. kO, what will be the output,
of the circuit, if'a sinusoidal input of amplitude 50 mV and frequency | KHz, is applied ?
[10 Marks][CO1,CO2)[BTL3]
3, The BJTs in the circuit of Fig. 2 are identical and have a de current gain of 100. Ry = 200 kO; Ry =
50 kO;R, = 2.2k&V ec =5V. A sinusoidal input of amplitude 0.25 mV and frequency 1 kHz. is
applied to this circuit, If the capacitors can be assumed to be large enough to be short circuits in the
frequency range of operation, (i) plot the input and output waveforms, marking all cardinal points;
(ii) What is the gain of this amplifier ? [10 Marks][CO2][BTL3]
Page 14 4, The transistor T; of Fig. 3 has a de current gain of 200. The component values are shown in the table
below:
G=G=G=iF | &=i0m | k=
R= R, = 1000 Ro=izkn | Va=5V
(i) If the parasitic capacitances of the BIT can be considered to be negligible, determine the maximum
voltage gain of this amplifier; (ii) Plot the frequency response of this amplifier, clearly indicating the
cut-away frequencies. [10 Marks][CO1][BTL3]
5, An N-type enhancement MOSFET is fabricated using 0.8 um process technology. The process
parameters are for = 15 nm, W/L = 20 and ju, = 550 m?V"'s', Determine Cox, kn” and the over-drive
voltage Vo», required to operate the transistor with Ip ~ 0.2 mA, at vps = 0.2 V. €, of the material of
the oxide film can be assumed to be 4. [5 marks][CO1] [BTL2]
6. Inthe circuit shown in Fig. 4, the BJTs Ti and T2 are identical, with @ = 50. If Ry = 2 kM, determine
the maximum value of Ry, [5 marks][CO4] [BTL2]
7. The transistors T, and Tz shown in Fig. 5, have twice the emitter junction area as Ts and are otherwise
ideal, with @ = 25. It is given that Ry = Ry = Ry = 2 kA. (i) Determine the current flowing through
the resistor Rs; (ii) What is the potential at V,? and (iii) If R3 is increased to 10 kM, what will be
current flowing through it ? [5 marks][CO4] [BTL2]
8, Employing a single power supply of 3 V and BJTs with 6 = 50 and an Early voltage V, = 150 V,
design a current source of magnitude 1 mA and impedance greater than 300 kA. Your design should
censure that errors due to transistor non-idealities are minimized. [10 marks][CO4] [BTL3]
9. For a differential amplifier, when the two inputs v; and vz are 15 mV and 20 mV, the differential
output v, = - 99.95 mV. When the inputs were interchanged, the output changed to 100.05 mV
Determine the (i) Differential gain; (ii) Common-Mode gain and (iii) the CMRR of the differential
[10 marks][CO5] [BTL2]
ential amplifier of Fig. 6, the current source /; is non-ideal with a magnitude of 1 mA and
a resistance of 200 k0. The transistors T; and Tz can be considered to be ideal. If the inputs are v, =
Sin(w,t) V +5 mV Sin(wzt) and v2 = Sin(w,t)V—5 mV Sin(wzt), fy =50 Hz & fy =1kHz,
determine the output taken differentially as 02 [10 marks][COS] [BTL3]
10.
Yor —
11. For Questions (i) — (xv), please choose the answer that you consider most appropriate and note it
down CLEARLY, in your answer sheet. For example, if your choice for a question is (b), write down
(b) in the answer sheet, against 11 (i). [15 marks][CO1, C02, CO4, COS][BTL2]
(i) Acommon-emitter amplifier employing an Rewith an emitter-bypass capacitance Cz will have
(a) higher gain (b) higher stability (c) lower stability (4) greater variation in operating point
(e) lower bandwidth when compared to a self-biased CE amplifier without Cy.
(ii) The BJT can be considered to be a
(a)CCVS — (b) VCVS_—(c) current source _() voltage source __(e) None of these
(iii) For an n-channel, enhancement mode MOSFET, not to be in cut-off,
(a) Vas >Ve (B)V gs
