Lecture5 Gen
Lecture5 Gen
www.philiphofmann.net
1
README
2
The electronic properties of metals
3
Electrical properties of metals:
Classical approach (Drude theory)
at the end of this lecture you should
understand....
• Hall effect
4
Chapter 4
Drude’s classical theory
Electrical properties
• Theory by Paul Drude in 1900, only three years
Electrical
after the electron was discovered.
metals propertie
• Drude treated the (free) electrons as a classical
metals
ideal gas but the electrons should collide with the
stationary ions, not with each other.
2⇤
= speed
average
k
1 3
12 mvt2= 2 3kB T
2
mvt = kB T
2 3k2 BT
vt =
8 m kB T
vt =
v
so at ⇥ 10
t room
5
ms 1
⇤ temp.
m
vt 10
= ms
5 1
5 vt ⇤
emperature this result in time and plays
an average a funda
speed of vt
ity per dergounit atime
Drude’s for the
scattering
classical event electrons
theory with the ions to ui
it follows that if we ch
he ions time
is
relaxation 1/τand. plays
time τ is acalled
fundamental
the role in
relaxati
es that the probability will per unit
on time forgo
average thethe
elect
it follows that if we choose an electro
role
attering inevent
(average the
time theory.
with
between the ionsFrom
is 1/τ the
scattering
scattering events)
will on average go the1time2 τ to
τ isdefiniti
. event called
will th
be
plays a fundamental role in the theory. 3 the ne
From t
n electron at some
scattering event will bewe random
can also
mvthe =
time,
define k
t time τ ag B the
the
T m
that if wemean choose an electron 2at some 2random
o the next
we canscattering
free path λ =
also define the τ v
event
t . If
meanandthe origin
free the o
path lab
rage go the time τ to the one next
would scattering
8
assume kevent
T
that
B
me λ = τ v . If the origin of = the scattering
eventτ willago. be the With
t
timethe τ ago. relaxation
vt With
⇤ the time
relaxa
m tha
one would assume that λ ≈ 1nm so
o define
ee paththe mean freeFor
between path
two between
scattering
the description two scatter
events
of1 alm
the origin of theisscattering are ⇤ 10
vtthe 5
ms
collisions w
attering For the aredescription
thenecessary
collisions to with
of almost all the
determine ion
ho
propert
−14
assume that λ ≈ 1nm so that τ ≈ 1 × 10 s.
is necessary
m so that τ ≈ 1 × 10 to example
determine the
−14 electrical
how many
s. vt = condu
electro
example the electrical density n, i.e. the
conductance. ⌃ The of
number re
ription of almost all properties within the Dru
6
ectrons contribute to Number
Table 6.1: a process, for electrons per atom and
of conduction
Conduction
density of electron Density
selected metals.
he relevant quantity is the electron n
per volume. The electron density is ZV n(1028 m −3)
metal
#atoms Li 1 4.7
contributes ZV conduction electrons
per Na 1 2.65
etals, ZV would be 1, for the alkaline
volume K 1 1.4
here are ρm /A atoms per cubic metre Rb 1 1.15
−3 Cs 1 0.91
gm and A is A is the atomic mass
Cu 1 8.47
ron density
calculatenasis ZV ρm /A. Values Ag
of 1 5.86
6.1. Au 1 5.9
#valence Be 2 24.7
density atomic Mg 2 8.61
electrons
mass Ba 2 3.15
per atom
Fe 2 17
Al 3 18.1
Pb 4 13.2
Sb 5 16.5
Bi 5 14.1
7
d d 1
me vF2 = EF
⇤...this must ⇤ surely
⇤ be wrong....
⇤⇤ 2 ⇤
) = exp(i r) + exp(
(+) = exp(i i r) r)= + 2exp(
cos( i r)r)⌅(r) = 2= cos(ikr (4.2
r)
• The d
electrons should dd
strongly interact d
with
e
deach other. Why
2⇤
d
⇤
don’t they? ⇤⇤ ⇤⇤ k= ⇤
) = exp(i r) ( ) exp(
= exp(i i r) r)= 2i sin( i r)r) = 2i⇥sin( (4.2
exp( r)
• The d
electrons should d d
strongly interact d d
with the = 90
lattice ⇥
ions.d
Why
h don’t they?
h h h ⌅k (⌫r) =huk (⌫r)eikr
⇥= = ⌃⇥ = == ⌅⌃ =⌅ (4.2
• Using 2m 2mE
p classical ptr 2m
statistics for the2mE
electrons
3 tr cannot
2m kT 2m
be3
k = ± kT
right.
n⇤
This is easy to see: 2 2d
⇤ ⇤
(+) = exp(i
9 d r) + exp( i r) = 2
⇥ ⌅ 6 ⇥ 10for using
condition
9
m⇥ ⌅classical
6 ⇥ 10 statistics
m d (4.2
⇤ ⇤
( ) = exp(i r) exp( i r) = 2i
⇥⇧l ⇥ ⇧ l is some d Å d (4.3
h h h
⇥ = = ⌃
de Broglie wavelength of an electron: =⌅
p 2m 2mEtr 2m 32
h h h
= =p =q for room T ⇥ ⌅ 6 ⇥ 10 9
m
p 2mEtr 3
2m 2 kB T
⇥⇧l
8
but:
9
Drude theory: electrical conductivity
Chapter 4
we apply an electric field. The equation of motion is
3
mvt = kB T
2 dv (4.
2 me
dt
= eE
Electrical
= 10 ms 5 properties
1 o
(4.
integration gives
eEt
metals
v = t
v(t) =
m
(4. e
⌃ is the average time between collisions then the
and if
average drift speed is
eE
a=
v =m
eE⌧ 1 3 = 10 2 (4.
ms 1
eme
for E ⇡ 10Vm mv 21
=we k
getB v
T
2 t
2
eEtremember: 10 vt = 10 ms
5 1
Drude theory: electrical conductivity
n|v|A 1s
number of electrons passing in unit time
A n|v|A
current of negatively charged electrons
en|v|A
current density
j = nv( e)
Ohm’s law
2
eE⌧ ne ⌧
and with v=
me
we get j= E
me
11
E ⇤ 10Vm 1
(4.6)
Drude theory: electrical
v = 10 2 vms
2 v
=1
1=eE⇧ µEconductivity
= µE (4.7
v = 10 ms me (4.7)
ne 2
⇧ e⇧
ne2 ⇧ Eµ
J =Ohm’s v=
law = mµE (4.8
J = me E2 e (4.8)
mene ⌧ e⇧
ne2j =
⇧ I µ =
E
J =
J = ne ⇧ A
2
E = neµE e e) = nµEe
=m n
e m
v( (4.9
J = me E I= neµE (4.9)
m
Je= = n v( e) = nµEe
A E|n E vA|
J =j ⌅E
= =E E= (4.10
J = ⌅E = ⇤|n ⇢ vA| (4.10)
⇤ en vA
2
and we can define ne2 ⇧ en vA
⌅ = ne ⇧ = nµe (4.11
the conductivity ⌅ =eE⇧ m = (4.11)
v= m e = µE
e nµe
1 (4
m m e = 1
and the ⇤ = e
m e
⇤ = ne22 ⇧ = nµe (4.12
(4.12)
resistivity v= ne ⇧
µE nµe (4
ne22 ⇧
dv
dv e⇧ ⌅⌅ = ne ⇧
and the ame =
µ=
ame = m = =eE
me = eE m
e mee |v| = µ|E| (4.13
(4
(4.13)
mobility dt
dt me
1
eEt1
12 11
eEt
Ohm’s law
2
ne ⌧
j= E
me
• valid for metals
• valid for
homogeneous
semiconductors
current I
• not valid for
inhomogeneous 0
semiconductors
10 8 Silver, Copper
Aluminium
10
6 Lead
4
10
2
10
1 Germanium
10 -2 Silicon
σ(Ω m )
10 -4
-1 -1
-6
10
-8
10
-10
10
Glass
-12
10 Diamond
10 -14
Sulphur
10 -16
-18 Quartz
10
10
-20 PET
10 -22
14 10 -24 Teflon
How to measure the
conductivity / resistivity
V
I I
R1 R2
Rsample
I V I
R1 R2 R3 R4
5 Au
σ (10 Ω m )
-1
Electrical propert
-1
Ag Al
Al
s
4 30
-1
-1
Be
7
7
I Mg 20 Au
J= = n ve = nµEe (4.17)
metals
Na Mg
2 Fe
A K 10
Na
Li
1 Li Fe K
Rb
0
Cs
Ba nPbBivA Sb 0
Rb
Cs Ba (4.18)
PbBi Sb
1 3
5 mv
10 nt 28=
2
vAe
15 kB20T 25 5 10 (4.1)
(4.19)
15 20 25
2n( x10 m-32) n (10
28
m )
-3
2⇤
vt ⌃==10nµe
5
ms 1 (4.20)
=
(4.2) k
ne2 ⌥
⌃ v=t = 1 (4.21)
(4.3) 3
m⇧e mvt = kB T
2
2 2
line 1⇤ 1nm1 (4.4)
⇧= = (4.22)3kB T
⌃ nµe
⇧ ⇤ 1 ⇥ 10 s 14 vt =
(4.5) m
17
⇥ = /vt
Drude theory: electrical conductivity
18
The Hall Effect
E
B d ⇥ 43meV
z
z
y Ed
EF = Eg
2
x
n = Ce (Eg µ)/kB T
H
x
n=
jx N + n
d i
• Accumulation of charge p = Ce
leads
µ/kB T
to Hall field EH.
• Hall field proportional to current density and B field
np = ni pi = constant
EH = RH jx Bz EH = RH Jisx B
called
z Hall coefficient
y The Hall coefficient
z
x
eEH = eBz vx
F= ev ⇥ B and definition E H = RH j x B z
F= eE H for the steady
state we get
|-e H|
EH EH
|-e x| RH = =
j x Bz envx Bz
|-evx Bz|
v x Bz 1
= =
envx Bz ne
2
ne ⌧
electron density form Ohm’s law? j = E
me
data are marked by the element’s names; the calcu
The Hall coefficient
Measured Hall coefficient for selected metals, normalised by the
sult as calculated from the electron densities given in Tab. 6.1.
|-e H| |e H|
|-e x| |e x|
−1 1
RH = RH = ,
ne pe
23
microscopic
microscopicinterpretation.
interpretation.
Look at definitions
Some again
relations from basic optics
Look at definitions again
Look at definitions again
wave propagation in matter
~ =E
E ~ 0e
i(kx !t)
~ , ~ !t) (4)
i(kx !t)
E~E == E
~
E 0ee i(kz !t)
E(z, t) = E00 e
i(kx ,, (4)
(4)
plane wave
2⇡N 2⇡N
complex
2⇡N index
k= and kN= =n+ and
i N =n+
(5)i (5)
k of 0 and N
= refraction = n + i 1.0
(5)
0 0 0.5
N complex index of
NE(z, refraction
t) = Eindex
complex 0e of refraction
0 e 0 -0.5
-1.0
Maxwell relation
Maxwell relation
N = N (!)
0.4
0.2
0.0
p p -0.2
-0.4
p p N = p ✏ = p ✏ r + i✏ i
0 20 40 60
(6) 80 100 120
Maxwell
N =relation
✏= N✏r =+ i✏✏i = ✏r + i✏(6)
i (6)
Kramers-Kronig relations
p
Kramers-Kronig
i((2⇡N/ 0 )zrelations
!t) ⇡ Z 0
i((! 0 ✏/c)z !t)
E(z, t) = Erelations
Kramers-Kronig 0e =E 10!e ✏i(! ) 0
✏r (!) = ✏r (1) + Z 0 020 0 2 d! (7)
0 ⇡02 1 !! ✏i(!!) 0
✏r (!)⇡physics
all the interesting = 1 !is✏in
Z ✏r (1)
i (!
+the)dielectric
0 0 02 function!
2
d! (7)
✏r (!) = ✏r (1) + 0 24 2 d! ! !
(7)
Free-electron dielectric function
one electron in d2 x(t) i!t
time-dependent field
me 2
= eE0 e
dt
i!t
Ansatz x(t) = Ae
eE0
and get A= 2
me !
0.4
exponentially
!~ < ! :damped
✏~εis
because of E(!, x)P= E0e = E0e real
ikx
real andpenetration
~
and ! ✏xno of
i cnegative,
negative, wavethe nowave into
propaga
propagation t
strongly absorbed. Following theisFresnel
opaque equations des
0.2
metal
0 20 40 60 80
solution 10
100 120
1.0
-0.5
implies! >
that! :
the✏ positive
becauseP of E(!, x)metal
light =E
also e
strongly
0 = E
reflected
is transparent 0 e
-1.0
0 20 40
ω > ωP , on the other hand, ϵ is real and positive and (5
60 80 100 120
reflectivity of metals
27 10
0E
plasma frequency: simple interpretation
ne2 ⌅2
! > !P : ✏ positive= 1 =1 P
s 0 m⌅
2 ⌅2
ne2 reflectivity of metals
!P = values for the plasma energy h̄⌅P
show plasmon picture
me ✏0
measured calculated
K 3.72 eV 4.29 eV
Mg 10.6 eV 10.9 eV
Al 15.3 eV 15.8 eV
Si 16.6 eV 16.0 eV
Ge 16.2 eV 16.0 eV
surface plasmon
displaced mode
electrons(longitudinal wave)
+ --
+ iqk rk qk--|z|
+
r) =
(~F 0e e --
. (23)
+
. 12--
. ions
• longitudinal collective mode of the whole electron gas
28
.
the Wiedemann-Franz law
κ
= constant
σ
= LT
⇥
• Wiedemann and Franz found in 1853 that the ratio of thermal and
electrical conductivity for ALL METALS is constant at a given
temperature (for room temperature and above). Later it was found by
L. Lorenz that this constant is proportional to the temperature.
1 2 Cd 2.42
= vFCu
⌅ cv 2.23 (7.59)
3
Mo 2.61
2 ⇥2/3
h̄ 2N
Pb 2.47
2
vF = 2 3⇥ Pt 2.51
(7.60)
me V
Sn 2.52
⇥3/2 ⇥1/3
2
⇥ 2 1 2me W h̄ N3.04
= kB T 2 3⇥ 2
(7.61)
3 2⇥ h̄ 2 Zn
2m e V2.31
2 2
⇥ kB
= T = LT L = 2.45 10-8 Watt Ω(7.62)
K-2
31 ⇤ 3 e2
Failures of the Drude model
• Despite of this and many other correct predictions, there are some
serious problems with the Drude model.
32
J= = ve = tem
Atn room nµE
A
Drude theory: electrical conductivity
• Onen vA assumes
1 3
50 Cu
T=77 K mvdergo
nt =
2
vAeakBscatt
T
2 2
time and pla
40 vt ⌃==10 nµe
line
5
ms 1
it follows th
σ (10 Ω m )
2
-1
Ag Al ne ⌥
30 ⌃will
v=t =on avera
m⇧e
-1
scattering ev
1⇤can1nm1also d
7
20 Au
⇧= =we
Mg Fe
Na ⇧ ⇤λ1⌃= ⇥ τ10vnµe.14
t If s t
10 Li
K one would E as
Rb J = ⌃E =
Cs Ba PbBi Sb eE ⇧
0 a=
For
h̄ 2 the
d 2 mdescrip
⇥ e
5 10 15 20 25
is necessary =to E⇥
eEt de
n (10
28
m
-3
) 2mv e=dx
2
at =
example the m elect
e
⇥ = A sin(kx x)
density n, eE⇧ i.e. the
2 v2= 2 2 2
h̄ kx by
calculated m h̄e assu
⌅ nx
33 E= =
I
J =
Failures of = n ve = nµEe (4.
A the Drude model:
metals the mean free path
n vA (4.
1 3
mvnt =
2
vAekB T (4.
21 23
t = (4.1)
2
⌃ =
mv nµe
vt2 = 10 ms
5 2
kB T1 (4.
(4.
vt = 10
nems
5
2
⌥
1
(4.2)
⌃ v=t = (4.
m⇧e
vt = (4.3)
⇧
1⇤⇤1nm
1nm 1 (4.4) (4.
⇧= = (4.
⇧ ⇤1⌃1⇥⇥1010nµe ss (4.5) (4.
14
⇧⇤ 14
E
J = ⌃E eE = (4.
a = eE ⇧ (4.6)
a = me (4.
2 2 me eEt
⇥=
• h̄ v d= at
Is there something wrong with=eEt
2m dx
v e= at
2
the
meE⇥
= path?
seemingly sensible (4.7) (4.
(4.
assumption for the mean freeeE⇧me
=
⇥ = Av sin(k x x) (4.8) (4.
me
eE⇧
2 v2= = 2 2 2 (4.9) (4.
h̄ kx mh̄e ⌅ nx
v 34 µE
wn below, 20-nm-deep trenches 1.1
LETTER
ction. The samples in Fig. 2 were0.5
0 0.2 0.4 0.6 0.8 1
0.9
0 5 10 15 doi:10.1038/nature12952 20
. 7). The samples in Fig. 3 were L (μm) L (μm)
ar), andExceptional
then in ultrahigh vacuum
ballistic 2 transport
1.08
R2p in epitaxial graphene
dots, Fig. 3a) or at 1,150 6C (all 1.04
nanoribbons
R (h/e2)
7
tion). The natural-step 1
ribbon 2
1.00 Tejeda , Muriel Sicot , AminaTaleb-Ibrahimi , An-Ping Li ,
Jens Baringhaus *, Ming Ruan *, Frederik Edler , Antonio 1 3,4 3 4 5
Zhigang Jiang2, Edward H. Conrad2, Claire Berger2,6, Christoph Tegenkamp1 & Walt A. de Heer2
Resistance, R (h/e2)
R4p
0.96
1 2 3 4 5
1.5
Graphene nanoribbons will be essential components in future gra-
phene nanoelectronics1. However, in typical nanoribbons produced
surface of electronics-grade
L (μm)
no graphene
SiC wafers6,7,14–16 (see Figs 1a and 2), so that
patterning is required to produce nanosized ribbons. More
b I+
from lithographically patterned exfoliated graphene, the charge car- precisely, to prepare
I the ribbons shownV below, 20-nm-deep I trenches
riers travel only about ten nanometres between scattering events, !
were etched along the SiC [1100] direction. The samples in Fig. 2 were
U–
resulting in minimum sheet resistances of about one kilohm per annealed at 1,600 6C for 15 min (ref. 7). The samples in Fig. 3 were
square2–5. Here we show that 40-nanometre-wide d U+
graphene nanor- heated at 1,300 6RC1 in Ar (4 3 R102 25 mbar), and
R3 then in ultrahigh
R4 vacuum
6,7
ibbons epitaxially grown on silicon carbide are single-channel room- (UHV) for 15 min at 1,100 uC (green dots, Fig. 3a) or at 1,150 6C (all
1 μm
temperature ballistic conductors on a length scale greater than ten
micrometres, which is similar to the performance of metallic carbon
others—see Supplementary Information). The natural-step ribbon7
10
resistivity (10-8 Ωm)
4
Johansson C. H. and Linde J. O.,
2 Ann. Phys. 25, 1 (1936)
0 20 40 60 80 100
content of Au atoms (%)
38