Chapter 14 Semiconductor

Time : 2 Hour STD 12 Science Physics Total Marks : 100

MCQ Class test

SECTION A

* Choose The Right Answer From The Given Options.[1 Marks Each] [100]

1. Truth table for the given circuit (Fig.) is:

2. The distinction between conductors, insulators and semiconductors is largely

concerned with:
(A) Their ability to conduct current
(B) The type of crystal lattice
(C) Binding energy of their electrons
(D) Relative widths of their energy gaps
3. In p-type semiconductors, holes are:
(A) Majority carriers (B) Minority carriers
(C) Absent (D) None of the above

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 4. Identify the logic gate in figure.

(A) NAND (B) NOR (C) NOT (D) AND

5. The breakdown in a reverse biased p-n junction diode is more likely to occur
due to.
(A) Large velocity of the minority charge if the doping concentration is small.
(B) Large velocity of the minority charge carriers if the doping concentration is
small.
(C) Strong electric field in a depletion region if the doping concentration is small.
(D) Strong electric filed in the deplention region if the doping conentration is large.

6. The energy band gap is maximum in:

(A) Metals (B) Super conductors
(C) Insulators (D) Semiconductors

7. The load voltage is approximately constant when a zener diode is:

(A) Forward-biased (B) Reverse-biased
(C) Operating in the breakdown region (D) Unbiased
8. The cause of the potential barrier in a p-n diode is:
(A) Depletion of positive charges near the junction.
(B) Concentration of positive charges near the junction.
(C) Depletion of negative charges near the junction.
(D) Concentration of positive and negative charges near the junction.
9. In the Boolean algebra, the following one is wrong:
(A) 1.0 = 0 (B) 0.1 = 0 (C) 1.1 = 0 (D) 1.1 = 1

10. In the Boolean algebra, the following one is wrong:

(A) 1 + 0 = 1 (B) 0 + 1 = 1 (C) 1 + 1 = 1 (D) 0 + 0 = 1

11. A hole diffuses from the p-side to the n-side in a p-n junction. This means
that.

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 (A) A bond ia broken on the n-side and the electron freed from the bond jumps to
the conduction band.
(B) A conduction electron on the p-side jumps to a broken bond to complete it.
(C) A bond is broken on the n-side and the electron freed from the bond jumps to a
broken bond on the p-side to complete it.
(D) A bond is broken on the p-side and the electron freed from the bond jumps to a
broken bond on the n-side to complete it.

12. To get an output Y=1 from the circuit above, the input must be:
(A) A-0 B-1 C-0 (B) A-1 B-0 C-0 (C) A-1 B-0 C-1 (D) A-1 B-1 C-0
13. A p-n junction diode cannot be used:
(A) As a rectifier.
(B) For converting light energy to electric energy.
(C) For getting light radiation.
(D) For increasing the amplitude of an AC signal
14. The impurity atoms with which pure silicon may be doped to make it a p-type
semiconductor are those of:
(A) Phosphorus. (B) Boron. (C) Antimony. (D) Nitrogen.
15. The bond, that exists in a semiconductor is:
(A) Covalent bond (B) Ionic bond
(C) Metalic bond (D) Hydrogen bond
16. To reduce the ripples in a rectifier circuit with capacitor filter:
(A) RL should be increased.
(B) Input frequency should be decreased.
(C) Input frequency should be increased.
(D) Capacitors with high capacitance should be used.

17. The transistor are usually made of:

(A) Metal oxides with high temperature coefficient of resistivity.
(B) Metals with high temperature coefficient of resistivity.
(C) Metals with low temperature coefficient of resistivity.
(D) Semiconducting materials having low temperature coefficient of resistivity.

18. The output of the given circuit in Fig.

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 (A) Would be zero at all times.
(B) Would be like a half wave rectifier with positive cycles in output.
(C) Would be like a half wave rectifier with negative cycles in output.
(D) Would be like that of a full wave rectifier.

19. Which of the following statement(s) is/are true about holes?

(A) They flow from positive terminal to negative terminal.
(B) They flow from negative terminal to positive terminal.
(C) They do not flow
(D) None of these

20. The forbidden energy gap for germanium crystal at 0 K is:

(A) 0.071eV. (B) 0.71eV. (C) 2.57eV. (D) 6.57eV.
21. Forbidden gap in a pure conductor is:
(A) 0 eV (B) 0.7 eV (C) 1.1 eV (D) 6 eV
22. In a semiconductor, the forbidden energy gap between the valence band and
the conduction band is of the order is:
(A) 1MeV. (B) 0.1Mev. (C) 1eV. (D) 5eV.

23. The concepts of holes is introduced based on:

(A) The notion that it is a whole lot easier to keep track of the missing particles in an
"almost-full" band.
(B) The keeping track of the actual electrons in that band.
(C) The charge of holes
(D) None of the above

24. Which of the following are correct for insulators?

(A) The valence band is partially filled with electrons.
(B) The conduction band is partially filled with electrons.
(C) The conduction band is partially filled with electrons and valence band is empty.
(D) The conduction band is empty and the valence band is filled with electrons.

25. In an insulator, the energy gap between conduction band and valence band is
about:
(A) 0 eV (B) 6 eV (C) 1 eV (D) 0.6 eV

26. NAND and NOR gates are called universal gates primarily because they:
(A) Are available universally.
(B) Can be combined to produce OR, AND and NOT gates.
(C) Are widely used in Integrated circuit packages.

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 (D) Are easiest to manufacture.

27. Semiconductors are generally made up of which substance?

(A) Silicon (B) Carbon (C) Phosphorus (D) Boron

28. The conduction band and valency band of a good conductor are:
(A) Well separated. (B) Just touch. (C) Very close. (D) Overlapped.

29. In which of the following statements, the obtained impure semiconductor is of

p-type?
(A) Germanium is doped with bismuth.
(B) Silicon is doped with antimony.
(C) Germanium is doped with gallium.
(D) Silicon is doped with phosphorus.

30. In insulators________. (C.B is conduction band and V.B is valence band)

(A) V.B. is partially filled with electrons.
(B) C.B. is partially filled with electrons.
(C) C.B. is empty and V.B. is filled with electrons.
(D) C.B. is filled with electrons and V.B. is empty.

31. If the bandgap between valence band and conduction band in a material
is 0eV, then the material is:
(A) Semiconductor (B) Good conductor
(C) Superconductor (D) Insulator
32. The n-side of the depletion layer of a p-n junction.
(A) Always has same width as of the p-side
(B) Has no bound charges
(C) Is negatively charged
(D) Is positively charged

33. Statement-1: NOT gate is also called invertor circuit.

Statement-2: NOT gate inverts the input order.
(A) Statement -1 is false, statement -2 is true.
(B) Statement 1-is true, statement -2 is true and statement -2 is correct explanation
of statement-1.
(C) Statement 1-is true, statement -2 is true but statement -2 is not correct
explanation of statement-1.
(D) Statement 1-is true, statement -2 is false.

34. In the depletion region of a diode:

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 (A) There are no mobile charges.
(B) Equal number of holes and electrons exist, making the region neutral.
(C) Recombination of holes and electrons has taken place.
(D) Immobile charged ions exist.

35. In a metal, the separation between conduction band and valence band is of
the order:
(A) 100 eV (B) 10 eV (C) 0 eV (D) 1 eV
36. A semiconductor device is connected in a series circuit with a battery and
resistance. A current is found to pass through the circuit. If the polarity of the
battery is reversed, the current drops almost to zero. The device may be:
(A) A p-type semiconductor (B) An n-type semiconductor
(C) A p-n junction (D) An intrinsic semiconductor

37. In a semiconductor diode, the barrier potential offers opposition to:

(A) Holes in P-region only.
(B) Free electrons in N-region only.
(C) Majority carriers in both regions.
(D) Majority as well as minority carriers in both regions.
38. If the two ends of a p-n junction are joined by a wire:
(A) There will not be a steady current in the circuit.
(B) There will be a steady current from the n-side to the p-side.
(C) There 'will a steady current from the p-side. to the n-side.
(D) There may or may not be a current depending upon the resistance of the
connecting wire.

39. Statement -1: NAND and NOR gates are called digital building blocks.
Statement-2: The repeated use of NAND (or NOR) gates can produce all the
basis or complicated gates.
(A) Statement -1 is false, Statement -2 is true.
(B) Statement 1-is true, Statement -2 is true and Statement -2 is correct explanation
of Statement-1.
(C) Statement 1-is true, Statement -2 is true and statement -2 is not correct
explanation of statement-1.
(D) Statement 1-is true, Statement -2 is false.

40. Given above are four logic gate symbols. Those for OR, NOR and NAND are
respectively:

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 (A) a, d, c (B) d, a, b (C) a, c, d (D) d, b, a
41. In intrinsic semiconductors:
(A) n > p (B) p > n (C) n = p (D) n = 0
42. In insulator:
(A) Valence band is partially filled with electrons.
(B) Conduction band is partially filled with electrons.
(C) Conduction band is filled with electrons and valence band is empty.
(D) Conduction band is empty and valence band is filled with electrons.
43. In Fig., assuming the diodes to be ideal:

(A) D1 is forward biased and D2 is reverse biased and hence current flows from A to
B.
(B) D2 is forward biased and D1 is reverse biased and hence no current flows from B
to A and vice versa.
(C) D1 and D2 are both forward biased and hence current flows from A to B.
(D) D1 and D2 are both reverse biased and hence no current flows from A to B and
vice versa.
44. The leakage current across a pn junction is due to _________:
(A) Minority carriers (B) Majority carriers
(C) Junction capacitance (D) None of these

45. The electrical conductivity of pure germanium can be increased by:

(A) Increasing the temperature.
(B) Doping acceptor impurities.
(C) Doping donor impurities.

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 (D) Irradiating ultraviolet light on it.
46. The breakdown in a reverse biased p-n junction diode is more likely to occur
due to:
(A) Large velocity of the minority charge carriers if the doping concentration is
small.
(B) Large velocity of the minority charge carriers if the doping concentration is large.
(C) Strong electric field in a depletion region if the doping concentration is small.
(D) Strong electric field in the depletion region if the doping concentration is large.

47. A p-type semiconductor is:

(A) Positively charged.
(B) Negatively charged.
(C) Uncharged.
(D) Uncharged at 0K but charged at higher ternperatures.
48. The output of OR gate is 1:
(A) If either one or both inputs are 1 (B) Only if both inputs are 1
(C) If either input is zero (D) If both inputs are zero
49. Hole is:
(A) An anti-particle of electron.
(B) A vacancy created when an electron leaves a covalent bond.
(C) Absence of free electrons.
(D) An artifically created particle.

50. The gate for which output is high, if at least one input is low is:
(A) NAND (B) NOR (C) AND (D) OR

51. When the conductivity of a semiconductor is only due to breaking of covalent

bonds, the semiconductor is called:
(A) n-type (B) p-type (C) intrinsic (D) extrinsic

52. In an intrinsic semiconductor, conductivity is due to:

(A) Dopin (B) Breaking of covalent bonds
(C) Free electrons (D) Holes
53. When an impurity is doped into semiconductor, the conductivity of the
semiconductor:
(A) Increases (B) Dcreases
(C) Remains same (D) Becomes zero

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54. To use a transistor as an amplifier, emitter-base junction is kept in ...X... and
base-collector junction is kept in ...Y... Here, X and Y refer to:
(A) Forward bias, forward bias.
(B) Reverse bias, reverse bias.
(C) Reverse bias, forward bias.
(D) Forward bias, reverse bias.

55. Which of the following is not the function of a NOT gate?

(A) Stop a signal.
(B) Invert an input signal.
(C) Complement a signal.
(D) Change the logic in a digital circuit.
56. Which one of the following statement is false:
(A) Work is a state finction.
(B) Temperature is a state function.
(C) Change in the state is completely defined when the initial and final states are
specified.
(D) Work appears at the boundary of the system.
57. The diffusion current in a p-n junction is:
(A) From the n-side to the p-side.
(B) From the p-side to the n-side.
(C) From the n-side to the p-side if the junction is forward-biased and in the opposite
direction if it is reverse-biased.
(D) From the p-side to the n-side if the junction is forward-biased and in the opposite
direction if it is reverse-biased.
58. If the two ends of a p-n junction are joined by a wire:
(A) There will not be a steady current in the circuit.
(B) There will be a steady current from the n-side to the pside.
(C) There will be a steady current from the p-side to the nside.
(D) There may or may not be a current depending upon the resistance of the
connecting wire.

59. In an insulator, the forbidden energy gap between the valence band and
conduction band is of the order of:
(A) 1MeV. (B) 0.1MeV. (C) 1eV. (D) 5eV.

60. Hole in semiconductor is:

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 (A) An anti – particle of electron.
(B) A vacancy created when an electron leaves a covalent bond.
(C) Absence of free electrons.
(D) An artificially created particle.

61. Among the following one can act as the building blocks for the other gates is:
(A) NAND and NOR (B) NAND and AND
(C) XOR and OR (D) NOT and OR
62. The avalanche breakdown in p-n junction is due to:
(A) Shift of Fermi level.
(B) Cumulative effect of conduction band electron.
(C) Widening of forbidden gap.
(D) High impurity concentration.
63. Two important processes that occur during the formation of a p-n junction.
(A) Diffusion
(B) Drift
(C) Both drift and diffusion
(D) Drift in p region and diffusion in n region

64. Materials which allow only larger currents to flow through them are:
(A) Insulators (B) Semi-conductors
(C) Conductors (D) Alloys
65. The impurity atoms with which pure silicon may be doped to make it a p-type
semiconductor are those of:
(A) Phosphorus. (B) Boron. (C) Antimony. (D) Aluminium.
66. In a semiconductor, which of the following statement is correct?
(A) At 0K, Si is a super conductor.
(B) In a p-type semiconductor the acceptor level lies near the conduction band.
(C) Each donor atom contributes one hole.
(D) p - n junction is electrically neutral.
67. In an experiment of photoelectric effect the number of photoelectrons has to
be increased without changing their frequency. The suitable step to be taken
about the incident radiation for this is:
(A) Increasing intensity without changing frequency.
(B) Increase both frequency and intensity.
(C) Increase frequency without increasing intensity.
 (D) Increasing only frequency
68. In the given circuit, if A and B represent two inputs and C represents the
output, the circuit represents:

(A) NOR gate (B) AND gate (C) Gate (D) OR gate
69. In semiconductors, at a room temperature:
(A) The valence band is partially empty and the conduction band is partially filled.
(B) The valence band is completely filled and the conduction band is partially filled.
(C) The valence band is completely filled.
(D) The conduction band is completely empty.
70. At breakdown voltage, the rate of creation of hole-electron pairs is _____
leading to the _______ in current.
(A) increased, decrease (B) increased, increase
(C) decreased, increase (D) decreased, decrease

71. A p-type semiconductor is:

(A) Positively charged.
(B) Negatively charged.
(C) Uncharged.
(D) Uncharged at 0K but charged at higher temperatures.
72. In Boolean algebra, A + B = Y implies that:
(A) sum of A and B is Y.
(B) Y exists when A exists or B exists or both A and B exist.
(C) Y exists only when A and B both exist.
(D) Y exists when A or B exist but not when both A and B exist.
73. The conductivity of a semiconductor increases with increase in temperature
because:
(A) Number density of free current carriers increases.
 (B) Relaxation time increases.
(C) Both number density of carriers and relaxation time increase.
(D) Number density of current carriers increases, relaxation time decreases but
effect of decrease in relaxation time is much less than increase in number density.
74. When a P - N junction is unbiased, the junction current at equilibrium is:
(A) Zero as no charges cross the junctions.
(B) Zero as equal number of charge carriers cross the barrier in opposite directions.
(C) Mainly due to diffusion of majority charge carriers.
(D) Mainly due to diffusion of minority charge carriers.

75. The gate that has only one input terminal:

(A) NOT (B) NOR (C) NAN (D) XOR

76. When an input signal 1 is applied to a NOT gate, its output is:
(A) 1 (B) 0 (C) either 0 or 1 (D) both 0 and 1

77. At absolute zero, Si acts as:

(A) Non-metal. (B) Metal. (C) Insulator. (D) None of these.

78. The main cause of avalanche breakdown is:

(A) Ionisation by collision.
(B) High doping.
(C) Recombination of electrons and holes.
(D) Low doping.
79. By increasing the temperature, the specific resistance of a conductor and a
semiconductor:
(A) Increases for both. (B) Decreases for both.
(C) Increases, decreases. (D) Decreases, increases.
80. Filter circuit:
(A) Eliminates a.c. component.
(B) Eliminates d.c. component.
(C) Does not eliminate a.c. component.
(D) None of these.

81. In an intrinsic semiconductor, the number of electrons in the conduction band

is ________ the number of holes in the valence band.
(A) Equal to (B) Less than (C) Greater than (D) None of these
82. The energy gap between the valence band and the condition band for a
material is 6eV. The material is?
 (A) An insulator (B) A metal
(C) An intrinsic semiconductor (D) A superconductor
83. The following truth table is for: ABY 110 101 011 001
(A) NAND gate (B) AND gate (C) XOR gate (D) NOT gate
84. The lead marked with the arrow is the _______.

(A) collector (B) base (C) emitter (D) core

85. A semiconductor is doped with a donor impurity:
(A) The hole concentration increases.
(B) The hole concentration decreases.
(C) The electron concentration increases.
(D) The electron concentration decreases.

86. The gate for which output is high if atleast one input is low?
(A) NAND. (B) NOR. (C) AND. (D) OR.
87. Carbon, silicon and germanium have four valence electrons each. At room
temperature the appropriate statement is:
(A) The number of free electrons for conduction is significant only in Si and Ge but
small in C.
(B) The number of free conduction electrons is significant in C but small Si and Ge.
(C) The number of free conduction electrons is negligibly small in all the three.
(D) The number of free conduction electrons is significant in all the three.

88. Generally semiconductor can be used safely between the temperatures:

(A) −75 and 200 (B) 0 and 75
(C) −25 and 300 (D) −40 and 1000
89. When an electric field is applied across a semiconductor:
 (A) Electrons move from lower energy level to higher energy level in the conduction
band.
(B) Electrons move from higher energy level to lower energy level in the conduction
band.
(C) Holes in the valence band move from higher energy level to lower energy level.
(D) Holes in the valence band move from lower energy level to higher energy level.
90. For the given combination of gates, if the logic states of inputs A, B, C are as
follows A = B = C = 0 and A = B = 1,C = 0 then the logic states of output D
are:

(A) 0,0 (B) 0,1 (C) 1, 0 (D) 1,1

91. In a transistor:
(A) The emitter has the least concentration of impurity.
(B) The collector has the least concentration of impurity.
(C) The base has the least concentration of impurity.
(D) All the three regions have equal concentrations of impurity.
92. The value indicated by Fermi energy level in an intrinsic semiconductor is:
(A) The average energy of electrons and holes.
(B) The energy of electrons in conduction band.
(C) The energy of holes in valence band.
(D) The energy of forbidden region.
93. The truth table given in figure represents:
A B Y
0 0 0
0 1 1
1 0 1
1 1 1
(A) AND - Gate (B) NOR - Gate (C) NAND - Gate (D) OR - Gate
94. The free electron density is more in .....:
(A) Conductors (B) Insulators (C) Semi conductors (D) Electrolytes
95. Figure shows the transfer characteristics of a base biased CE transistor.
Which of the following statements are true?

(A) At Vi = 0.4V, transistor is in active state.

(B) At Vi = 1V, it can be used as an amplifier.
(C) At Vi = 0.5V, it can be used as a switch turned off.

(D) At Vi = 2.5V, it can be used as a switch turned on.

96. There is a sudden increase in current in zener diode is:

(A) Due to rupture of bonds
(B) Resistance of deplection layer becomes less
(C) Due to high doping
(D) Due to less doping
97. Two identical capacitors A and B are charged to the same potential V and are
connected in two circuits at t = 0 as shown in figure. The charges on
the capahltors at a time t = CR are, respectively:

(A) VC, VC (B) VC

e
, VC (C) VC, VC

e
(D) VC

e
,
VC

98. The energy gap in glass at room temperature is:

(A) Greater than that in a semiconductor.
(B) Less than that in a good conductor.
(C) Greater than that in a good conductor.
(D) Both (1) and (3) are true.
99. In a p-type semiconductor, the acceptor valence band is:
(A) Close to the valence band of the host crystal.
(B) Close to conduction band of the host crystal.
(C) Below the conduction band of the host crystal.
 (D) Above the conduction band of the host crystal.
100. The thickness of the depletion region is of the order of ___________ of a
micrometre.
(A) One-hundredth (B) One-tenth
(C) One-thousandth (D) None of these
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