SEMICONDUCTOR E.ectrowee: ll Materials, Mevices and. Simple Citeuidcss Electronics > ome 1 sh ie Eleven + mechanics tne), solid-state electronics Csemiconductoys)} Leseusild nay duby CORT). used in keloision and computer monitors work on the principle of vacuum tubes, thy oe semiconductors devices better than vaccum sevice, j >with the help of some solid state semiconductors and thei, a junctions, #ne number change camry and then diner tion can he conkwolled» Simple exciodions ike Light, ead ot simallopplitd te can change the numb i jaa _stenican ductor, ? The supply cond flow ~in the stmnics aducly devices mite sultan the solid _dtself ‘r MNF SWAY |S1P1d,4 > subsholl Kk Lempey semiconducty behave Like ; sara pte semicon Anculator apsare AH poor Hemper semiconductor een tondud yp 2 tt Npinsic, semiconcluctors ¥ % pad Ge..one_ Led valent a : a1 ose eat ae ae ae q : Pic ty enue 7st] qe tends do i lente olectrons with each of 14s foun neorert nejghboun ators and olde taker & shane ¢ one electron from such neiyhbour. : There shoned eleckwong pairs form acovalent bond or Valence bend = —demiconductoes incteases "A pure semiconductor is intrinsic gemiconoluctr? ee ~SThe semiconductor in which _ear.‘el canter Chater ancl e~) are created due to thermal ereitution only across se | fr Pidden —_enougy gap. is called an Tabinsie. semi coneluctor » “Tk ts pars newbral —$______— * Bue to recombination of hole ond e~ conductivity decreases, = mond bo charge comin decreases « With incasing ——;é Alois cass = Difference between Concluctor , Semi- conduclry and insulator with the help 4 fund Theory, i ul —Bealater + E, (conduction Bond } Coomplelely ply } E, 7 3eV on Ey* bey Chocbiden gap /enorg. 3p) fy { vatence bond J Coompldlely Filled Here the trong gap _so lange that _eheckvons tannok he Scited trom valence bande fac n hand by thermal ——.Urdtation + 50, eonduction process is nok possiblee ——___ $l endisckas 2= E | Forbidden gap ts pmo gals 8 anode wt ee 2 | This situation makes» a fe eas Ld ae ET don the electrical conduction. ys pag Tranefane ymis tance OR ear eae Hs highs sot se ho cay t eerie “ J 4semiconductors :- iF —_y semiconductors, > Here, a finite but small gap este, ii : ue te amall 9p 4 act near: Amps. some ele chiions- valence foend tan scysine —ennugh —anaigy te crak the i nergy —gup and enter —thes_conduction bund. Thine electra ns though smalk tn ipumbd, con move ia the ——jienduction bunds. 0+ 9) iin ot 2 Hence, the nests {semicoaclucteys is nat os high aa that: of kee i@sulatoys 9 2 a sah — The value Meo Rann ias Sits folie Loalnmet tpt jana lite = Cho jump trom. group state zt edcitedl state), %- .O Conductivity 4 semiconductor incvease with Imeneage in temp _@ Resistance _Stmiconductoh decreases with _jacte ase in Lop. © Temp. coefficient af neststunce lot) is negative for semiconductor. = R=Ro = «yer 7 peer es hh eS sith i et Oger (Stag i A= NE 8 Sieg and for “conoluctor isis we. —_—x - Sp onductivity increases by adding some bmpuritg olement in senioaea} © Back the impurity must be added in ppm drm. | There ane a ky pts” } oO. i L=type semiconotuctor + S| Sif ge one fobranuent and Anes fom Covalent | pbondls (4) with thein neighbouring elo.rs- t A When suitable trivalent impurities ane added #4 pure siJg, | WE get extrinsic semiconductor called po lypt semiconductor, | 7? Devalent Impwukien occupy some 4 Hee Aattice site and | = germs bond with other atoms: S | Buk os 3s valency ahs $8050 thet epee ly 3 Minds, and ARE fourth place “remains emp ly. — —--“Tndie : This _emply space je eauled electron hole NE hue 2 Uectron quo neigh bout jake ena _come idl Mente = at lang 2 ‘ a —— ent sittomees ba aie bys linden He influence of etetrie ei - the_posilive forminal but if appears a4 i —jphesi tively changed rove —towands negative —derminat nue So, 01 the cauiens one _tve banged ik is a2 wealleal if a ea\ Z re: pe_Semiconcluctoy + when Sif Ge is Cloped with penta valent Impwitin Like Phos phorus (P) or Assen ONS) yoke. 4 He Kathe sites jy the ele being fetravelent makes atoms > Wher As ov P are chopped 4 ge out 4 5 & make covalent bong. Ss thin th occupy some OVysdal 4 Si]Qe. 4 4 bonds with the atl becaniag, Uectrons ane assed 2 But the fide electron is exten which gets de localised. 7 This —dlelocatised eheedvan increases tht —cancauctte! by af the stmiconcluctor—_ aanves -Sea ~lleon dmction ts formed hy. ciffsing rvaltnd impuas ' eel side and penta valent impunity to otha h side. f — > Iletane cvicding the kwo poner js cabled junction. peer) P= n Junction fs non- Ohmic device « =e po ‘yee Stmiconduchy has oo concentration holecang igh concentration of free eledrons 1 Ahere is, hole ty gt ent In IN=side and r P-side. = = . —hole 1a diffused from P wn wk —thedton f , both gi eatanlised Crecombined) and Fapsara 7) pepletion lagers cia q i. bw 7 Thene tsa ; eA near a [ondion which opposes C4 cwuu k charge MSs known as Depletion Aig or. ! 7 vid of clepletion lagen i, in micrometer orden 10°). > Pobential developed in depletion bowen ts Known ts fottntiak barvrion (\y,), Ve? Si OV Ns7 Gt-~9 O3y Rate 4 Recombination in semiconductor pe Hiatal ek __propov tonal tp _ fi EO at tlifeses sod haleh gaat in ik. See ae ce oe Apres 7 Besa ah oie Lat ay __ fer Intrinsic Mtmicondlucty :>“ nesnyenp i SA eR Rea = Rin ———@ einen a | bs i “From equation ©. ard Out get, ss. 0! ehflan ie lasing. Ppenjentien. 1» called biasing Junction kK : “0 tonen ‘P pant —of pon jin 6 cnatn_ tt | osifive —texminol of 2 battery and M1" puet wilh te : negative er es the haber rae 2 log Basing ts cabled —forwasd biasing a = {ete of —Pzjunclion—moves Aowands n= fie at ele | of n= gunction moves Aswrarels p= junction. 7 Majority charge — caters es ne aepltin ag —— = Vand forvond —eumrent t1_gcamated: e | spectat points —_____—— ee >) wiath ofp agen ect > fotemal barvcior (Yo) necluses £0" = \e- 1. jun ction offers Ae FUL tance: in _feywand hiads N= €d a a Ae EF Ay xt Cuttingit 7 When p Port tuminal f the ae —tonminal 4 the Paltery then this type of hinsing is j—vAnewon as Rewtnse biting Uectrons ~Pjinetten moet _fausandd nn: junction and hotes % n- junction meve Aouad p= junction. evi comers — ey osses tne _ depletion AAMSE cunnend ts genenateal + cy width. leer andl Voy — depletion lagen dncrtases C fotealial bauer olde inereaden Pon junction offs (eB reastance ‘3 Ma Rewence pte % I eee eee 2 Nei Sdown voltuge neistonce Ye o't [Duomumic ) 5 hag ge es | aJunction Breakdown CRevense fneakdownd >| When the neversed — Vol tage [[Peached when the junction the mewense Current + ‘Ss value of voltage iS known as Breakdown Voltage (Vp), is increased » a point ts beaks down with sudden six, 8 1 Diffusion cornnrent Cwithout afettony). = ~—Tn pen junction , electnons” fgfiad m N &# Pp sice From P_tp _N side, clue jon of change - po 1% _eunnent willl fiw known as _ current, - ge Cured (with buttoy)‘ Application 4 Px Junction Diode _ peclification ond. nectgien a Be PCr Oh conversion 9 pve veltage and 92 volta ond at cunrent inte 1s called rectification and the nectification 's Called nectifrwr. x yak WAVE RECTIFIER % Be cwrens dice UNA PArfen, oH T on! A i i fee) 4 G voltuge ts applied _across..4_cldodle_in sexi | wl i s Hie toad — ith a lad, o pulsating —veltnge will appean actos. only dade dusting the half —cycles—of the a AC inp ical which inpud dtd de ts foruoael biageel» + Zz ane ae1 ss the secondary coil of the bien feral supplies the Osi ng af UAC volta, across terminal A and B+ then the voltage of A is positive, the oliode bi | Forward biased and if alls —¢onioluction. SF Hewever, whea the voltage af A fa. negative 1 the te | is wewoue- biased ond i does nol allow conduction, | | Therefore, as shown in the dimes in positive Nat acy | AC, there fs cuwrent in boad nesistir Ry and oe, hene, wegt the culput voltage. jWhewes, Me is no cunent in the negative hal Cycle any 1so_oulput_¢ voltage is atso mot obtuined: PTs asill continue ill the supply ts on: _ > Thus, oulput 20 lage Hrough—s till vowing Ls nestricted fp only one dintken and is said tbe nechifled —>_Since ventg—half partion of the Input signal ds _obtaineg = opel $0 ANE juncin dine celled half sant ein % FULL WAVE RECTIFIER x a Tron ster mor AC 230v_ O te ett SO Hz, Priteutus 4 of — a | ct LY ka | Step cbt wn _fuems fav mon Dy aeapsard = A Rei oo which converts both” half aa a ; inte _Oc is ___ called Full wove —nectifion bed Duaing the ft oh mrt ERG Ont hee tet the coil_is ot positive pobential and the lower ond at negative potential: nip tahoe nn a L The junction diode »y will at fenswra—bies and Dy cit yk newense biase # st The conventional cunrtat due to 0, will flow» > Putting fhe second hat 4 input tye upper ead. af steoncany ceil is at nequtive potental and lowenend. at ney positive i potential - Now, junction oliade yw _get-—foriaead bias — } and 0, will qt _nonponge — pelted t noe the _conmentional ewurent due sr 0, will flow ir > due te _this, oulput voltage ls obtuined! during both y positive and negakive half —eg an i Jee Pe wan Rede Yfiient civewd a getdingonens fier is mare Bell, won ntti gs Matt wore Aeabdft ers nectihed voltage /courent thon* I Filter Cireuifs Ive Recdigien gre nding of Ac A device _that tonvents AC. wiped. obtained a, On Cuba of Rectifion ond gluta pune -pe—voltage is cabled filter cneig This happtna because Dre _cunrent Math ematicalby, Se ese see COC) Ay ATE i pi Vat KE Oh 450, only AC con pana though capacitor nat Dees “ | And Pre SAC cutent GPE tema penindg E =“ wt get pune DC cunrent aaa Tas FILA is Called tee acs aa — Wpple EF | |7 +d X Sranyples x wy 14-2) Given > Si atoms/V = S Kilo atoms ee ca nya s x10! m? 9 ’ Ne=) 4, 4-9 Lppm = 10° atoms ‘ ~ In 10° atoms of Si —— > LAS at . fom > 3, Ske o> a pa ee 5 o ‘ $$ tt p= SK 10" atoms. | te ne = Ex lef? 6 Tien tf 4 |—— ol sees { acters eea | ot ee rc a