Scribd
Upload
1 views

Tut1-1

Physics tutorial material

Uploaded by

akshitji101
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
1 views

Tut1-1

Physics tutorial material

Uploaded by

akshitji101
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Tutorial-1

ECN-101: Fundamentals of Electronics


Dept. of Electronics and Communication Engineering Indian
Institute of Technology Roorkee

1. An n-type silicon bar of length 0.1 cm and cross-sectional area 100µm2 has a majority carrier concen-
tration of 5 × 1020 m−3 , and the carrier mobility is 0.13m2 /V -s at 300K. If the charge of an electron
is 1.6 × 10−10 C, calculate the conductance and resistance of the bar.

2. A forward-biased silicon junction diode is connected to a source of bias voltage V at temperature


T = 300K. Find the diode current I if V = 0.6V and Is = 10nA (assume the ideality factor η = 2).

3. A Ge diode carries a current of 20 mA when a forward bias of 0.25 V is applied at 300K temperature.
Answer the following questions:

(a) Obtain an estimate for the reverse saturation current.


(b) Calculate the bias voltages needed for diode currents of 1 mA and 100 mA.
(c) Estimate the reverse saturation currents at 320K and at 350K. Remember that the reverse
saturation current doubles for every 10◦ C rise in temperature.
(d) Calculate the bias voltages required for diode currents of 1 mA and 100 mA when the diode
temperature is 350K.
(e) For both (b) and (d) above, determine the average AC resistance (rd ) of the diode for a current
swing of 1 mA to 100 mA.

4. When a large reverse bias is applied, the current flowing through a certain Ge diode at 27◦ C is 3×107
A. Answer the following questions:

(a) Calculate the current when a 200mV forward bias is applied.


(b) Calculate the d-c and a-c resistances of the diode at 200mV forward bias.
(c) Calculate the d-c and a-c resistances of the diode at −10V reverse bias.

5. Given a diode current of 8 mA and an ideality factor η = 1, find the saturation current Is if the
applied voltage is 0.5 V and the temperature is room temperature 25◦ C.

You might also like