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Electronic Device and Circiut Analysis Reviewer

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18 views5 pages

Electronic Device and Circiut Analysis Reviewer

Uploaded by

kayceeencinares
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Reviewer for Module 2: Diodes

What is a Diode?

 A diode is a semiconductor device that allows current to flow in one direction only,
acting as a one-way valve for electrical current.

Diode Construction

 Diodes are typically constructed using semiconductor materials, with a p-n junction
formed by doping a semiconductor with specific impurities.

Diode Biasing

 Forward Bias: The diode conducts current when the anode is more positive than the
cathode.
 Reverse Bias: The diode blocks current when the cathode is more positive than the
anode.

Checking a Diode Using an Ohmmeter

 Procedure:
o Forward Bias Measurement:
 Connect the positive lead to the anode and the negative lead to the
cathode.
 A low resistance (typically 0.2V to 0.7V for silicon diodes) indicates the
diode is good.
o Reverse Bias Measurement:
 Swap the leads.
 A high resistance (often infinite) indicates the diode is functioning
correctly.

Diode Application: Rectifier

 Diodes are used in rectification to convert AC to DC.

Half-Wave Rectifier:

 Average Output Voltage Formula:

Vavg=VmπV_{avg} = \frac{V_{m}}{\pi}Vavg=πVm

Where:

o VavgV_{avg}Vavg = Average output voltage


o VmV_{m}Vm = Peak voltage
Example Calculation:

 If Vm=10VV_{m} = 10VVm=10V:

Vavg=10Vπ≈3.18VV_{avg} = \frac{10V}{\pi} \approx 3.18VVavg=π10V≈3.18V

Full-Wave Rectifier:

 Average Output Voltage Formula:

Vavg=2VmπV_{avg} = \frac{2V_{m}}{\pi}Vavg=π2Vm

Example Calculation:

 If Vm=10VV_{m} = 10VVm=10V:

Vavg=2×10Vπ≈6.37VV_{avg} = \frac{2 \times 10V}{\pi} \approx 6.37VVavg=π2×10V


≈6.37V

Special Diodes

1. Light-Emitting Diode (LED):


o Emits light when current flows through it. Used in displays and indicators.
2. Zener Diode:
o Operates in reverse bias and allows current to flow when the voltage across it
reaches the Zener voltage (VZV_ZVZ).
o Zener Regulation Formula:

Vout=VZV_{out} = V_ZVout=VZ

Where VoutV_{out}Vout is the regulated output voltage.

Example Calculation:

 If VZ=5VV_Z = 5VVZ=5V, then Vout=5VV_{out} = 5VVout=5V.


Reviewer for Module 3: Transistors

What is a Transistor?

 A transistor is a semiconductor device used for amplifying, controlling, and generating electrical
signals. It is an active component in integrated circuits, essential for modern electronics.

Bipolar Junction Transistor (BJT)

 Construction: A BJT consists of three layers of semiconductor material, forming two p-


n junctions. It has three terminals: emitter (E), base (B), and collector (C).
 Biasing of BJT: Proper biasing is crucial for BJT operation, ensuring it works in the
active region for amplification.

Field-Effect Transistor (FET)

 FETs control current using an electric field. The most common type is the MOSFET
(Metal-Oxide-Semiconductor FET), used in digital and analog circuits.
 Biasing of FET: Similar to BJTs, FETs require proper gate voltage to operate
effectively.

Applications of Transistors

Transistor as Amplifier

 Amplifier Classes: Different amplifier classes exist based on their operation:


o Class A: High linearity, high gain, low efficiency (about 30%). Operates continuously.
o Class B: Higher efficiency (about 50%). Uses two transistors to amplify half of the
waveform.
o Class AB: Combines Class A and B to reduce distortion while maintaining efficiency (50-
60%).
o Class C: High efficiency (around 80%) but poor linearity. Used in RF applications.

Amplifier Class Summary:

 Class A: Conducts 360°, ideal for high fidelity.


 Class B: Conducts 180°, efficient but may distort at crossover.
 Class AB: Conducts slightly more than 180°, balancing efficiency and linearity.
 Class C: Conducts less than 180°, used in high-frequency applications.

Transistor as a Switch

 Operating Regions:
o Cut-off Region: Transistor is "OFF" (no current flows). Conditions:
 VBE<0.7VV_{BE} < 0.7VVBE<0.7V (for silicon BJTs)
 IC=0I_C = 0IC=0
o Saturation Region: Transistor is "ON" (maximum current flows). Conditions:

 VBE>0.7VV_{BE} > 0.7VVBE>0.7V


 IC=VCCRLI_C = \frac{V_{CC}}{R_L}IC=RLVCC
 VCE≈0VV_{CE} \approx 0VVCE≈0V

Switching Summary:

 Transistors can control devices like LEDs and motors by switching them ON/OFF.
 A small base current controls a larger collector current.
 Flywheel Diode: Used across inductive loads to protect the transistor from back EMF.

Key Formulas

1. Collector Current in Saturation:

IC=VCCRLI_C = \frac{V_{CC}}{R_L}IC=RLVCC

Where:

o ICI_CIC = Collector current


o VCCV_{CC}VCC = Supply voltage
o RLR_LRL = Load resistance

2. Amplifier Efficiency:
o Class A: ~30%
o Class B: ~50%
o Class AB: 50-60%
o Class C: ~80%
Reviewer for Module 4: Integrated Circuits

Discrete Circuits vs. Integrated Circuits

 Discrete Circuits:
o Composed of individual components (transistors, diodes, resistors, capacitors,
etc.) manufactured separately.
o Components are connected on a circuit board using conductors.
o Can operate at higher voltages.
 Integrated Circuits:
o Microscopic arrays of electronic circuits and components diffused into a
semiconductor material (typically silicon).
o Invented by Jack Kilby in the 1950s.
o Packaged in a solid outer cover with contact terminals (pins).

Types of IC Packaging

 Dual In-line Package (DIP)


 Plastic Quad Flat Pack (PQFP)
 Flip-Chip Ball Grid Array (FCBGA)

Advantages of Integrated Circuits

1. Size: Up to 20,000 components can fit in a single square inch.


2. Complexity: Enables fabrication of complex circuits on a single chip, simplifying design
and improving performance.
3. Reliability: Fewer connections lead to higher reliability.
4. Cost: Lower production costs due to bulk manufacturing.
5. Power Consumption: Consumes less power compared to discrete circuits.
6. Replaceability: Easier to replace in circuits.

Disadvantages of Integrated Circuits

1. Modification Limitation: Parameters cannot be modified after fabrication.


2. Component Failure: If one component fails, the entire IC must be replaced.
3. Capacitance Limitations: Higher capacitance (>30pF) requires external discrete
components.
4. Power Limitations: Cannot produce high power ICs (>10W).

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