Reverse bias applied to a junction diode (A) Lowers the potential barrier Raises the potential barrier (Ph Raises the pot (C) Increases the majority carrier current (D) Increases the minority carrier current In forward biasing of the p — n junction (2011, 1988) (A) The positive terminal of the battery is connected to p —side and the depletion region becomes thick. (B) The positive terminal of the battery is connected to n—side and the depletion region becomes thin. (C)_ the positive terminal of the battery is connected to n —side and the depletion region Secomes thick. (D), The positive terminal of the battery is connected to p-side and the depletion Y region becomesth Inap —njunction Ww High potential at n side and low potential at p side (B) High potential at p side and low potential at n side (C)_ pandn both are at same potential (D) undetermined The increase in the width of the depletion region in a p-n junction diode is due to (A) Forward bias only Reverse bias only (C) Both forward bias and reverse bias (D) _ Increase in forward current (NEET 2020)Application of a forward bias to a p-n junction (A) Widens the depletion zone (B)p Increases the potential difference across the depletion zone (C) Increases the number of donors on the n-side % Dy Decreases the electric field in the depletion zone Depletion layer consists of (A) mobileions (B) protons x (C) electrons ¥ immobile ions The barrier potential of a p-n junction depends on (Karnataka NEET 2015) 1. Type of semiconductor material + 2. Amount of doping ~ K Temperature , Which one of the following is correct ? (A) (1) and (2) only (B) (2) only (C) (2) and (3) only SP) (1), (2) and (3) In ap — n junction diode ,change in temperature due to heating (A) Affects only reverse resistance (B) Affects only forward resistance (C) Does not affect resistance of p — n junction P) Affects the overall V — I characteristics of p — n junction (NEET 2018)Which one of the following represents forward bias diode ? (NEET 2017, 2006) (ay tv Rov iD Re” From the following diode circuit, which diode is in forward biased conditions BSD ¥ J) 4 In the following figure , the diodes which are forward biased are (Mains 2011) J cD, " oi eee $V R “sv ) iv) , x ov = (d) =v (A) (a), (b) and (d) (B) (0) only Y (c) and (a) (D) (b) and (d) Consider the junction diode as ideal. The value of current flowing through AB is (A) 10-24 (B) 10°34 A 1a (CoA “Vv b -6V (2015)Which one of the following represents forward bias diode ? (NEET 2017, 2006) ay ay Roy D> we () Vv R From the following diode circuit, which diode is in forward biased conditions > “av pe) oy 2v ap 2v In the following figure , the diodes which are forward biased are (Mains 2011) ey as @ r 4 “sv (0) Sov" >" - x ow a) =” (A) (a), (b) and (d) (B) (0) only Y (c) and (a) (D) (b) and (d) Consider the junction diode as ideal. The value of current flowing through AB is (A) 1078 A (B) 1073.4 A p 1B (0A 10-2 A (2015)Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is F%» wo (2012) (A) 0.754 e a |) (B) zero (C) 0.254 PY 0.54 The current in the circuit will be (A) 5/404 BS 5/504 (C) 5/104 (D) 5/204 The given circuit has two ideal diodes connected as shown in figure. Te current flowing through the resistance R, will be (wEET 2016) 25 (B) 10.0A (©) 143A (D) 3.13A In the given figure, a diode D is connected to an external resistance R = 100.2 and ari é.m4. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be — (A) 20mA (B) 35 mA KD earl (D) 40 mA Tt D wa2 a | » +a es 1 In the given figure, a diode D is connected to an external r an é.im.f. of 3.5 V. If the barrier potential developed acro: current in the circuit will be T op 1009 (A) 20 ma Poti (B) 35 mA “OR esr Bi 30 mA ' (D) 40 mA 35V resistance R = 100 Mand diode is 0.5 V, the ss the (2015) The diode used in the circuit shown in the figure has a be the value of the resistor R,connected in ser maximum cw (B) 209 (D) 5.69 0.5 V atall currents and a maximum power rating of 100 mill constant voltage drop at atts, What should Potential Across Pz TV Bice = ave = P= [ron io? VET R Vo OS Ter_i6* Revel “Tih To 24wt z : Payot - Poop Lines © } z Thede uD