B iffusion Die: coeff ch bo hel® HALL EFFECT (by BH+Hall in (879) SF a cwnent carrying conductor ov semiconductr 2 placed In @ Iransverse magnetic field, a potential AUfferince Vy “B produced in a douction normal te botk magnetic freld and cwwrent- douction. “This & Known 23 Hall effect” Experimental axvangernent” 7 P lip Ae miconclu Lop) og “consider a thin, rectangular P fpe ductors 4 Thickness “t? and tuadth'w, which is an insuleling tip A voltmal and cunnent Source Us con : placed betareer. too poles qon uch that Lhe magralcfild ack & pesperineBus ty this typi nagatine chamye 6 lft o til rear face F’. “These sepaal akin of opposcte chaxge Produce a fransveue olectric freld, Ey» The dersction f Eu & fromm front (F) to Mar face CF’) = Vi Ru vH ber fo ku, hole eaperience an eleckuic force Fe addibion horente force - When dlectvic fore Fe balances megrelic fore FL, equtlibrtun condibion Xeaches and hols flou x dixechon parallel to face Fand F/ At eqpeltboturn. Fe= Fe ; ek, = 248 T= AEP Va =-2 a y Ava A=we i? a, ¢-@ br Plipe sembconcuiclos Ry = pa For ni Bemiconcuctor Ry = — aie Thre fore Carnie concenbration. Cn orp) Can be lela Fron the value cf Rui AD V, = Ru BE Pet > Vi z Ry = Mat Bx “Stemik of hu i/c Mall eee Mobis & Bam daeft a acquired inv Beck x belaaten wk clecbtefield Ken gemitmeat applad )ay) Factéss affecting Hall volta Va = ae Pet > Hell Voltage iy cieel Popes fional 46 mag held s sgh Band Currant 4 pay Kio fo tee material ? Hell Voltage & Anvee Trontnel te the Chany ine: amcerbahion “f d. thickness 4m tinted * fletl voltage will be Jaap, Me bog lis Moet Peat Hall’ vollage & tanger, thc rally, He Carrion concenbration, and thine, the mal torial (aot Foy semiconductors te ee COMME ume volume & about 1o%/n2, tof mat about 10 ord Thufove, the tall vallage & ie, to demitorductoy than tn hss), Aeplicatina of Hall Effect (Smportene of Hell / of falps by deeirine © te bp ¢ demitercaclor mst) carsity @reatrelon (n=[gte| P= giz) ee) mfor_PN gurelion ® Fermi Lewl Biagnam for f (1) Onaiaseo =F ge Pn jurelton t ee h eC , #612, Conduction aoe a | @o0000 By seee aa) le uN a \ 2 %o Value Band || \ i = | j fi hows thr -enugy fovel diagham of or sented die Diski al be veatantl of a of PA fumetion, the fermilmel on psice and n side ote al ‘postitons. Tn orden, to establish epultorion the Feomi dn bolic Angions must come f5 Same lov Hence the UH brands get Hapleced wo cppasile cdexeclion i towel Ly electrons tt on nstde 4 and psile & Loe ; ca of enna lavel by Roles in valence bard scde 4 low Henee i» the 'stde move into P scole { holes on the ‘P'side N TeHon,[RES ees me puroad. hig of bandistaueture on ® P Angin. he shefling of eran Bands Contfrues 12: the jerwrgy lovels Epp ard Een aittain the dame Jowel tn ett the Aegions: Whon the tivo Lowels are tqpaliged,, the cannin migaation comes to a halt and equtltbrium Crdinsn iy occured. | The displacement” of the —energ: bands én oppescte dixection on bale ada 5. oi i cai nd im fhe Junction ions Pt Acswlts on a pe featial baxsies, Ye ov an eneroy hill of height eV, | aa hall of electrons in the conduction band => Conduction hull Frog full 4 hols i Valence, band => Valence Rill Pk meony that the clrctiing on the n ide camot go inte the =p Arion unleus frome a minimum ener eN Similorly , the holes on ‘pl side cannot gointg ‘vi ele unless fame a mingmum 0er4y 4 i9 (2) Forwaro BIASED aoe E © © 0 Valine Band P : dn Prward, biasing , ee rs Be Taminal of external . ee 4 connecked to n yen and pasthive tentnal fe 1 fegion the ve toiminal 4 vol BOURLL Causes an imeroose in” election vand at upward. abl envagy duvels on n side Bimlorly the pes’tive onnated tr p side causes an cnercage in hole snergy lowering of tls on Pp stde: As the dasplacements of the fewals occa “un duselions, the fermi towels Ep, and Erp get 4 on emount: of eV, + Also the faight : ‘ veduced an +s e(Ve-Vp) fiom eVy- RE of, potuitial barrier, t movements@ Applications _of hemiconductons © Photovoltaic Cell - Solan cell e Converzion of Light > Prinaple Phol5 vettate Effect (eigen el note vain) dn Photivetbate. effect tohan cidein matuials | bem 2xfo sed te Aacuabion gens selecbion—hale px a conduction » As a Ault a vo Uae i anda aciow oan matirtal + Condétion + “Tie raduabion -onera4 R=ha Should be qrcaln than. ens matin 1 Ee ey Hy of Sr a OY ee A Colin Pee Rupe Solar call iy & pn unction diode will very Righ nny es DL conyest- ie Phipe maberial on which rmilesiall 4s grown» “The top layer U ( Ob asta thot dolar 2am can Seach the ¢ nchion CALA w aa a saat on duvtee (E=ha> &3) falas rated in’ totic pand v “ft cco ae in The Aegcons- d oretion Shure an og ote, Rlecbou region and hotles vn i2) Light Emitting Diode (LED) 2 A -emaling diode ix a semiconductor diade. thaké géves off light where tb spond based, | Laps ane generally fabstealad usteg ILI qfoup clement pound .emicenducloas suchas GaAs, CaP, GaAsP eles which Fame a dict band gap- Painetple : When a pr ganclion b foowaid biased, Ha electrons and holes deffuse tisough. the function in oppestle dtvectfon- Pn This proces thoy Aecembine.. ee! each oth. in the letton Aci and seloase. rtd walled nation. 2 « Accorchas fe Frand slouctire, using thes PE itoation. te fon comes back te the valence band wilh Borne, to te band gap e & eS ae tds Dh this case. Uke Aecombinakion Bnet uy ree Std ig@ @ Zeney Diode Zens chode 45 a semiconductor diode Speck aaa fe operate in the breakdewn a lon of the jing. Zener diodes are always opetated lin pomeye. bias condition « By a the at ace and other porametirs ; ay posscble. “tr dusigo the breakcloun a te suik spect cfc axpphocions aay oo” a | va choradlusis lugs zien = Rae‘) Current 42 ; sen diode acts Mtke ovelinary clrecle wrdler ard based condition - using Aewel basing, eee Amuse. voltage, the Aewthue ir mn 1 mera / Symtot preteens Ne —____> : Sa > OBIS Abpuetiy - “This volisye & callecl ‘voll or zenu voltage Vz° 2 igh ‘voltage Acres Senn diede ac. ht changes ckpenden d across the Zenrduods, ae no matter PA above zener selon,