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E3220

Nanoelectronics

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Bhaswati Chakraborty
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4 views

E3220

Nanoelectronics

Uploaded by

Bhaswati Chakraborty
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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E3 220 August 3:0

Foundations of Nanoelectronic Devices

Instructor
Kausik Majumdar
Email: [email protected]
Teaching Assistant
No Teaching Assistant
Email: NA

Department: Electrical Communication Engineering (ECE)


Course Time: Tue, Thu, 10:00 AM - 11:30 AM
Lecture venue: ECE 1.07
Detailed Course Page: http://www.ece.iisc.ernet.in/~kausikm/teaching.html

Announcements
None.
Brief description of the course
The course is primarily designed for M. Tech. or Ph.D. students who are beginning their career in the broad

field of electronic and opto-electronic devices. The course provides a solid mathematical background to

quantum mechanics, and also how to apply quantum mechanical principles to describe electrons in solid state

materials. The concepts learnt are applied to various classical and modern day electronic devices.
Prerequisites
None.
Syllabus
Module 1: Introduction

Module 2-4: Mathematical foundations of quantum mechanics - Hilbert space, observables, operators and

operator algebra, commutators, bra and ket notation, representation theory, change of basis.

Module 5-8: Postulates of quantum mechanics, uncertainty principle, coordinate and momentum

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representation, quantum dynamics using unitary operator, Schrodinger and Heisenberg pictures, stationary

states, time evolution.

Module 9-11: Free particle, wave packet, Hydrogen atom, Excitons.

Module 12-14: Electrons in solids - Drude and Sommerfield model, k-space quantization from periodic

boundary condition, density of states, Fermi energy, derivation of Fermi-Dirac distribution, chemical potential

and its relation with Fermi level.

Module 15-21: Crystal lattice, Reciprocal lattice space, Brillouin zone, Electron levels in periodic potential

with BVK boundary condition, Bloch theorem and its proof, Bandstructure, Crystal momentum, band velocity,

density of states, effective mass, bandstructure examples in common semiconductors (Si, Ge, III-V) and

implications to device physics.

Module 22-24: Semiclassical theory of electron dynamics in periodic lattice, Bloch electrons and wave

packets, Comments on the model including validity, conductivity of perfect crystal, conservation of energy,

current carrying capability by empty, filled and partially filled bands, introduction to the concept of holes.

Module 25-30: Principles of operation of MOSFET, concept of top of the barrier, Short channel effects,

Quantum effects in MOSFET - Coupled Poisson-Schrodinger equations and iterative solutions, quantization in

MOSFET channel, quantum capacitance, Tunneling, One dimensional barrier transmission problem, Gate

oxide tunneling, Direct source to drain tunneling, Band-to-band tunneling.

Module 31-34: Lattice vibrations, one dimensional chain of atoms, effect of introduction of a basis, acoustic

and optical branches, quantum theory of linear harmonic oscillators, creation and annihilation operators,

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quantization of energies, phonons, phonon bandstructure and density of states, effects in devices due to

electron-phonon scattering.

Module 35-37: Quantization of angular momentum, Ladder operators, possible eigenvalues of total angular

momentum and its components, electron spin, Pauli spin matrices, spin-orbit coupling.
Course outcomes
The students would learn the following from this course:

(1) Mathematical foundation of quantum mechanics, including bra and ket algebra.

(2) Fundamental postulates of quantum mechanics,

(3) Uncertainty principle, quantum dynamics, and aspects of time evolution.

(4) Application of quantum mechanical principles in formulation of free particle, Hydrogen atom, and

Excitons.

(5) Description of electrons in solids, and understanding Fermi energy and its difference with chemical

potential.

(6) Crystal lattice and reciprocal space, Bloch's theorem, electronic structure and its related concepts.

(7) Basic concepts of carrier transport in semiconductors.

(8) MOSFET device concepts and details of its operations, different quantum mechanical effects including

quantization, quantum capacitance, Intra- and Inter-band tunneling.

(9) Coupled Poisson-Schrodinger equations and numerical solution.

(10) Quantum theory of linear harmonic oscillator, Concepts of lattice vibration and phonons, implication into

devices.

(11) Quantum theory of angular momentum, Electron spin.


Grading policy
10% for assignments,

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30% for mid-term examination,

25% for project, and

35% for final examination.


Assignments
Typically assignments are grouped int two or three parts and distributed over the entire semester.

Besides, there is a project work where the students need to develop a device simulator using numerical

solution coupled Poisson-Schrodinger equations.


Resources
The main resource for the course is the class notes. Apart from that, the following are useful for references in
various parts of the syllabus:

Books:

D. J. Griffiths, Introduction of Quantum Mechanics, Prentice Hall.


A. Ghatak and S. Lokanathan, Quantum Mechanics, Trinity Press.
V. K. Thankappan, Quantum Mechanics, New Age.
Solid State Physics, N. W. Ashcroft and N. D. Mermin.
S. M. Sze, Physics of Semiconductor devices, Wiley-Interscience.
Y. Taur and T. H. Ning, Fundamentals of modern VLSI devices, Cambridge University Press.

Papers:

Various recent as well as classic papers.

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