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Final_ISFET

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5 views

Final_ISFET

Uploaded by

kishan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ISFET

Ion Sensitive Field Effect


Transistor
Details

● FET Technology: Control of an


electric field applied to
semiconductor material.
● Glass electrodes usually measure
electric potential of a solution.
● ISFET electrodes measure change in
electric charge due to presence of
hydrogen ions in the solution.

Figure: Schematic of ISFET electrode


How it works?

● Ion Sensitive Layer: Usually glass (SiO2) but


can be other oxides like Aluminium oxide,
Titanium and Zirconium oxides, Polymers like
Polythiophene, Polyaniline.
● This layer comes in contact with our solution
and reacts with hydrogen ions in the solution
which causes the change in electric charge of
ISL.
● This change in electric charge is detected by
Silicon substrate which is a transducer.
● Channel: A small groove inside the substrate
is made to allow detection of pH change.
How it works?

● AgCl electrode is used in ISFET


electrodes as a reference electrode.
● Usually reference electrodes are
used as a fixed point of comparison.
● This ensures having accurate and
reliable pH readings.
● This is typically a half-cell.
● The other reference half cell used
here is KCL solution.
● This is a reference electrolyte.
How it works?

● The change in electric charge of ISL creates


change in electric field at the interface of
gate electrode and ISL.
● This creates the conductivity of n-type Si
beneath the gate electrode.
● This is proportional to pH of the test
solution.
● This change in conductivity is given out as
current or voltage output.
How it works?

● The source and drain semiconductors act as electrodes


of FET and detect the change in electric field of gate
electrode.
● Source is closer to gate electrode. This produces a
voltage across source and drain semiconductors which
in turn produce flow of electrons from source to drain
via channel.
● Closer source provide sensitivity but increases response
time.
● p-Si substrate is other electrode of FET. It changes
conductivity due to the electric current produced
above.
● Si is used because it is chemically stable, inexpensive,
having necessary electric conductivity.

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