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-3

bos K. K. Wagh Institute of Engineering Edu. &Research /Polytechnic, Nashik

Name: Piyush Dipak wlani Roll no:66


Diy:F 8ranch:ENTC.

90 Define Hall effect. Dezive the expression of Hall effect, Hall


voltaje and discuss theirapplicotons
effeti
Hall When a ument. canayin metal or semiconduto staip
Js placa in a transyease magnehc field, poteo tial differene
get deeleped ots96sitina disecion perpendiculax to bath
magnehe field and current direction.This effect is koaun as
HalleffeCt
The potential developed across it is called hall voltage

P-tpe

As shaunin diagram, tonsider a ptype serniconductas


I ctaxent Alouing from conducar /senionduckaa aong X-axis.
B magnetic field along Y-axis.
bo K. K. Wagh Institute of Engineering Edu. &Research / Polytechnic, Nashik - 3

Undex the elfech of magnehic feld appled along y- axis, Lonentz fooce
applied on neqative chaxge and e are faxced upwaxd, thus Saface
F become negaively_chaxqed with xespect to size E thm semicondutox
is n-type, Etzsminal F becomes positivehs chaaqed with sepect to
side E then semiconducox must be p-tspe

Lamentz foce achiog on the e due to magnetic fieldB is,


F= Be V d 0

Foxced developed along y-axis due to elechic field Es is,


FeEH

Compasing eq'0.and@
BeVd =eEH
EH = BVd

ABso, E4- V

Subs tituting eg" 9in9

Now cUTnent Hooing is given by.


IspeAVJ
Vd= I
peA
S K. K. Wagh Institute of Engineering Edu. &Research / Polytechnic, Nashik- 3

Substhituting egnO io

peA
But surface 0nea_ of semiconducHo A=0xb

BI
Pewt pet

Equakion ox is E)uirad cquchian of Hall ualtaqe.


The texm (ne) i_abare 2guaton is called Hall coefeiient, Re

hall Coefficient of p-type semiconductar, whene p is


pe
hole density
Ry = - hall coelAcient of n-type semiconducto wbexe o s
edensity
Apphicakian of Halleffet - Halleffect is used
0 to detemine mability of cha xqe camiers.
to de testmine wheber the semiconducY ia ptupe an nutpe
to detezmine cncen toation of chaqe maiers
oK. K. Wagh Institute of Engineering Edu. &Research / Polytechnic, Nashik -3

90 Explain the cla ssi£icahon of solids an the basis of band theoxy


In band thecay solids are cassified into three categomies based
an their elecaical conducivity conducoxs, semicanductox
and insulatoxs.

Conductas Semiconducor Insulato

0 No taxbidden enengy foxbidden eneigy gap frobidden enesgy gap


9ap betueen conducton(Eg) is betwen 0.5eV js wide,ie greater
band and valence bandto 3eV, at ok but the thon 2eV
lconduction bond ik empty
at o'k

valence s aeesily willomly conducH when Eg is lange, dre bad


Lavailable to condut Valence eget exctta COnductos and uixe

elechnitity enrgy tojump in the high enexgy to


Condacion band Conduch

Ex sier, Copper silcon and Gemanium Glass, ooad nubbe


aluminium, ion, etc plastic, etc.

Okeslstiuity yerylouResisäivity lies belween lo ResistiuityNeay high


betueen 0-8 to 107m to lo 2m Resistiity betueen 08 to o2m
decaeases as tempeaate Dt decarease wHh
increases increasing tempevature
o K. K. Wagh Institute of Engineering Edu. & Research / Polytechnic, Nashik -3

9D uwhat is the sigpificance of caihcal tempenaBure, catical magodic Hdd


ond caitial cu3gent density fox supexconduckns ?

’.Caita temperature &


The tempezattre at awhich o n Hmal mateial tuns into a sIperCondldon
fs called the cntical tempezatuzr C). SuperCOndudox has its oun
caitical tempat which N passes ouer into the supenconduchog state
Non-superonducg
tive materal
Super conducor
Resista nce

Þk T. Temperature

Coitical maqnetc field:


the minimum ma¡n etc Held uhich is necessaoy to regain the
omal mesistivity is calledthe caitial magnetic Aeld He
when appled magnetic field exGeds He the slipertonduchng state
is destoyed and maapete pnateaial goes int noamal state
HeCt)= whee H Co) critiaal field ato'k

H
Normal
He
superonducind
T(K)
Nashik -3
K. K. Wagh Institute of Engineering Edu. &Research I Polytechnic,

(oitical cuTent density


The maximum cuxaent flowing pex unit_gn1 of caDSs secHono
supextonducr at which its speaconduciequity is destroyed is
caled caitical cument density
It is given by J.=I
A

9G Acoppex wine ha an e concentzahon of 8:5X I0® es/m ond


e9 mobiliky_of 45x10ms Calalate the resistvity of the
wise

PTo alulate the esisHvity ) of the coppex, we can use Hhe


follouwing foamula deived faom the daude model of elecic
conducivily
nel

D= elechncal concentaton Cin eelm)


e=choÌe of an eo (-6xlo-c)
demohability Cm vs)

U= 4-5x\0- m vs
e= l-6xI0-1c
Polytechnic, Nashik -3
oK. K. Wagh Institute of Engineering Edu. &Research /

Now, substitute Hhe value infosmua

(8-5xIo2s )x(l6 x 10-9) x (4.5X/03)

S5 Calculate the aesistivits of a ptype silhcon sample with a bole


Concentaton of 8x10S cmand hole mobility of 450 cm/Vs

To calaulate the aesishuity


pelp
p=hole CODCentsah¡n Cin cm)
echaae meo(6X10c)
lpehale nobiliks Cin cm/us)
p= 8X10 cm-3
- 450 cm/s
e= l6 X|o

Con vext_hole concentxaHn to m-3


p=8 XIo'S cm- -8X|0m-3
K. K. Wagh lnstitute of Engineering Edu. &Research / Polytechnic, Nashik- 3

(8x 02) x(6x10-1)x(4SD x10J.

P =
5-76 x (0 57-6

p=Ool42m

*The tesistivity (G) of the p-ype silticon sample is appmxinately

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