No.

of pages - 18 (M)
MARKING SCHEME
PRE-BOARD EXAMINATION (2024-25)
CLASS : XII
SUBJECT: PHYSICS (042)
le; % 3 ?kaVs vf/dre vad & 70
Time Allowed : 3 hours Maximum Marks : 70

1. (b) small and negative 1

2. (a) B is perpendicular to v 1

3. (d) Magnetic flux and Power both 1

4. (a) 1:1 1

5. (c) The work done is the same in Fig. (i), Fig. (ii) and Fig (iii). 1

For Visually Impaired Students only :

(c) is zero

6. (d) 5.0 × 10–2 J 1

7. (a) X/6 1

8. (b) AB/R 1

9. (a) their momenta are the same 1

10. (b) the number of conduction electrons increases 1

11. (d) 36 cm away the concave mirror 1

12. (a) size of obstacle should be comparable to the wavelength of the wave 1

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13. (d) Assertion (A) is false and Reason (R) is also false. 1

14. (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct

explanation of the Assertion (A) 1

15. (c) Assertion (A) is true, but Reason (R) is false. 1

16. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct

explanation of the Assertion (A). 1

SECTION-B

17. Let the resistance at 20°C is R and given temperature is R’ ½

According to question R’=2R

And R’ = r (1 + T) ½

T = T – T0 ½

1
2R = R (1 + T)  T  T0 T 270 C ½


d
18. Magnitude of induced emf e  and   BA and B µo nI ½
dt

d dB
e µo nIA µo nA ½
dt dt

4.0  2.0
e  4  10 71500  4
  4 10   7.5 10 6 V 1
0.1

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19. 1+1

For Visually Impaired Students only :

1 1 1 1 1  1
      1
f f1 f 2 f 30 20 60

F = - 60cm negative sign indicates that system behave as diverging lens. 1


20. Intensity I  4I0 cos 2 ½
2


And path difference  x 
2

2
  x


For p .d.=  phase = 2 and intensity I =4Io = K unit ½

(i) for p.d. /3  = 120 and intensity I = K/4 ½

(ii) for p.d. 1/2,  = 180 and I = 0 ½

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21. For intrinsic semiconductor at T=0 For intrinsic semiconductor T > 0 1+1

(a) An intrinsic semiconductor at T = 0 K behaves like insulator.

(b) At T > 0K four thermally generated electron-hole pairs. The filled circles represent

electrons and empty circles represent holes.

For Visually Impaired Students only :

In intrinsic semiconductors no doping is carried out where inextrinsic semiconductors

trivalent or pentavalent impurity is doped in Si or Ge.

OR

For n-type. It is formed by doping pentavalent impurities. The electrons are majority

carriers and holes are minority carriers (ne >> nh). 1+1

For p-type. It is doped with trivalent impurities The holes are majority carriers and

electrons are minority carriers (nh >> ne).

SECTION-C

22. (a) (i) Expression for drift velocity. 2

(ii) Correct Explain for drift velocity of electrons in a metallic conductor vary

with increase in temperature. 1

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 (ii) When a potential difference is applied across a conductor, an electric field is

produced and free electrons are acted upon by an electric force (Fe). ½

Due to this, electrons accelerate and keep colliding with each other and

acquire a constant (average) velocity vd called drift velocity. Electric force

on electron Fe = -eE. ½

If m is the mass of electron, then its acceleration a = (F / m) = -eE/m

We have v = u + at

 eE
Wherev v = vd drift velocity and u  0,a , t  trelaxation time. ½
m

eE
vd  0
m

 eE
vd  | v d |  ½
m

(ii) With rise of temperature, the rate of collision of electrons with ions of lattice

increases, so relaxation time decreases. As a result, the drift velocity of

electrons decreases with the rise of temperature.

OR

(b) (i) The resistances offered by the electrolyte of cell to the flow of current called

internal resistance. ½

EMF of a cell (E) is defined as the maximum potential difference when no

current is being drawn from the cell. ½

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 (ii) Correct derivation for equivalent emf of two cells and internal resistance of

the combination. 1+1

23. (a) Curve A shows power consumption over a full cycle. 1

(b) the average power consumption over a cycle is zero. 1

(c) L or C

For Visually Impaired Students only :

 
(a) Inductor the instantaneous value of current is I  Io sin  wt  1
 2

(b) The average power consumption in a cycle is 1

(c) If this device is connected with a alternating current lags behind the voltage by

 wL 
where   tan  1 
 R  
1

24. When an ideal capacitor is charged by de battery charge flows (momentarily) till the

capacitor gets fully charged. When an ac source is connected then conduction current

dq
Ic  keep on flowing in the connecting wire. 1
dt

Due to changing current, charge deposited on the plates of the capacitor changes with

time. This causes change in electric field between the plates of the capacitor which

causes the electric flux to change and gives rise to a displacement current in the region

between the plates of the capacitor. 1

d
And the displacement curablesiven given by Id  o and Id Ic at the same time. 1
dt
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25. Given 1 = 600 nm = 600 × 10–9 m, 2 = 520 nm = 500 × 10–9 m

n D
As we know the nth position of bright fringe is y n 
d

D = 1.2 mm and d = 2mm = 2 × 10–3 mm

3 600 10 9
1.2
y3   1.08mm 1
2  10 3

For least distance of a difference of fringes, there must be a difference of 1 in order of 1

and 2.

n1 1 n 2 2

As 1 > 2, n1 < n2 if bright fringe will coincide at a least distance y, n1 = n1, n2 = n+1


n 1 (n
  1) 2 n  2
5 1
 1  2

n 1D   10 9 1.2
5 600
Least distance Ymin    1.8mm 1
d 2  10 3

26. (a) Bohr’s second postulate defines stable orbits This postulate states that the electron

revolves around the nucleus only in those orbits for which the angular momentum

is some integral multiple of h/2 where h is the Planck’s constant Thus, the

nh
angular momentum (L) of the orbiting electron is quantized i.e. L  ½
2

nh
According to Bohr’s second postulate mvrn = ½
2

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 nh h
2 r
n But   De Brogli wave length ½
mv mv

2 r
n n ½

(b) In innermost orbit (Ground state) n = 1 ½

For second excited state n = 3

And radius of nth orbit of hydrogen atom is given by rn  n 2 ½

r1 12 1  11
 2  , r3 9r1 9 5.1
 10 
4.59 10 10 m ½
r3 3 9

27. (a) n  92
235
U 144
Z 
Ba A
X
36 3n

Acording to law of conservation of atomjic number

0 + 92 = Z + 36  Z = 92 – 36 = 56 ½

From law of conservation of mass number,

1 + 235 = 144 + A + 3 × 1 ½

A = 236 – 147 = 89

(b) (i) BE of 235

92 U  BE of 144
Z Ba A
36 X and due to difference in BE of the nuclides.

235
A large amount of the energy in the fission of 92 U. 1

(ii) Mass number of the reactant and product nuclides are same but there is an

actual mass defect. This difference in the total mass of the nuclei on both

sides, gets converted into energy, i.e.e E = mc2. 1

8 XII-PHYSICS-M
28. ½+½

Experimental circuit arrangement for studying V-I characteristics of a p-n junction diode

(a) in forward bias, (b) in reverse bias.

(c) Typical V-I characteristics of a silicon diode. Students may also only curve. 1

Minority Carrier Injection : Due to the applied voltage, electrons from n-side cross the

depletion region and reach p-side (where they are minority carriers) Similarly, holes from

p-side cross this junction and reach the n-side (where they are minority carriers). This

process under forward bias is known as minority carrier injection. ½

Threshold Voltage: It is a critical reverse bias voltage at which current is independent of

applied voltage. ½

9 XII-PHYSICS-M
 For Visually Impaired Students only :

Two important processes occurring during the formation of a p-n junction are (i) drift and

(ii) diffusion

Drift : The drift of charge carriers occurs due to electric field. Due to build in potential

barrier, an electric field directed from n-region to p-region is developed across the

junction This field causes motion of electrons on p-side of the junction to n-side and

motion of holes on n-side of junction to p-side. Thus, a drift current start. This current is

opposite to the direction of diffusion current. 1

Diffusion: In n-type semiconductor, the concentration of electrons is much greater as

compared to concentration of holes, while in p-type semiconductor, the concentration of

holes is much greater than the concentration of electrons. When a p-n junction is formed,

then due to concentration gradient, the holes diffuse from p-side to n-side (pn) and

electrons diffuse from n-side to p-side (np). This motion of charge carriers gives rise to

diffusion current across the junction. 1

(b) No, because the voltmeter must have a resistance very high compared to the junction

resistance, the latter being nearly infinite. 1

29. (i) (b) Capacitance increases by two times 1

(ii) (a) Charge remains constant 1

(iii) (a) Type of metal used for plates 1

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30. CASE STUDY

(i) (c) Interference and Diffraction both 1

(ii) (d) All of them 1

(iii) (a) 1.6 × 1016 Hz 1

OR

(c) Ni

(iv) (c) both light and matter 1

31. (a) Complete ray diagram 1

µ2 µ1 µ2  µ1
Correct derivation   2
v u R

The refractive index of the liquid must be equal to mu = 1.47 in order to make the lens

disappear This means µ1 = µ2 . This gives 1/f = 0 or f   . The lens in the liquid will

act like a plane sheet glass. No, the liquid is not water. It could be glycerin. 2

11 XII-PHYSICS-M
 OR

(b) (i) Ray diagram of compound microscope at near point. 1

Magnification produced by compound microscope in terms of length of tube.

L  V
m  1  2
f0  f e 

(ii) Here, M = –20, me = 5, Ve = –20 cm

ve
For eyepiece, me 
ue

 20  20
 5   ue   4cm
ue 5

Using lens formula,

1 1 1 1 1 1
    
ve u e fe 20 4 fe

 1 5 1
    fe 5cm 1
20 fe

12 XII-PHYSICS-M
 Now, total magnification

M  m e m o

 20 5 m 0 mo 4

Also, | v o |  | ve | 14

| v o |  | 4| 14

vo  14 4 10cm

v0 10
m0  1    4 1
fo f0

10
 5    fo 2cm 1
f0

32. (a) (i) Definition of electric flux and its Sl unit. 1

The number of field lines crossing a unit area, placed normal to the field at a

point is a measure of the strength of electric field at that point call it electric

flux.

SI unit is Nm2/c

(ii) prove that the electric field at a point due to a uniformly charged infinite

plane sheet is independent of the distance from it. 3

Let Gaussian surface for a uniformly charged infinite plane sheet and a be

the uniform surface charge density of an infinite plane sheet. We take the x-

axis normal to the given plane. By symmetry, the electric field will not

13 XII-PHYSICS-M
depend on y and z coordinates and its direction at every point must be

parallel to the x-direction. We can take the Gaussian surface to be a

rectangular parallelepiped of cross- sectional area A, as shown.

(A cylindrical surface will also do.)

As seen from the figure, only the two faces 1 and 2 will contribute to the

flux, electric field lines are parallel to the other faces and they therefore, do

not contribute to the total flux The unit vector normal to surface 1 is in -x

direction while the unit vector normal to surface 2 is in the +x direction. 1

Therefore, flux = E.S through both the surfaces are equal and add up.

Therefore, the net flux through the Gaussian surface is 2 EA. The charge
enclosed by the closed surface is A.

Therefore, by Gauss’s law,

2EA   A / o

or, E   / 2 o

Vectorically,


E n 1
2 o

14 XII-PHYSICS-M
 (iii) For positive sheet Electric field is normal to sheet directed outward. For

negative sheet Electric field is normal to sheet directed inward 1

OR

Students may show by diagram.

32. (b) (i) Dipole moment: a pair of equal and opposite charge separated by some

distance, SI unit is Cm. 1

(ii) Expression for torque acting on a dipole of dipole moment p placed in a

uniform electric field and vector form and direction 1

Consider an electric dipole placed in a uniform electric field of strength E in

such a way that its dipole moment p makes an angle 8 with the direction of

E. The charges of dipole areq and +q at separation 21, the dipole moment of

electric dipole, p = q × 2I 1

There is a force qE on q and a force-qE on –q. The net force on the dipale is

zero, since E is uniform. However, the charges are separated, so the forces

act at different points, resulting in a torque on the dipole. When the net force

is zero, the torque (couple) is independent of the origin. Its magnitude equals

15 XII-PHYSICS-M
 the magnitude of each force multiplied by the arm of the couple

(perpendicular distance between the two antiparallel forces). 1

Torque  = magnitude of either force x perpendicular distance between lines

of action of forces 1

 = qE (BN) = qE (2I sin ) = (q2I) E sin  = pE sin 

   Clearly, the magnitude of torque depends on orientation () of the electric

dipole relative to electric field Torque () is a vector quantity whose

direction is perpendicular to the plane containing pand E given by right hand

 
screw rule. In vector form   p E .

(iii) If = 0 sin 0 = 0 = 0 stable equilibrium

If = 180 sin 180 = 0  = 0 unstable equilibrium 1

33. (A) (i) A Galvanometer can be converted into voltmeter by connecting high

resistance in series with it. And small resistance called shunt in parallel with

it to convert 2 ammeter. 2

(ii) Let IC be the current through galvanometer at full deflection

To measure V volts, V = Ig (G + R1) ...(i) 1

V V
volts,  Ig (G R 2 ) ...(ii)
2 2

2 volts, 2V = Ig (G + R3) ...(iii)

16 XII-PHYSICS-M
 To measure for conversion of range dividing (i) by (ii)

G  R1
2  G R1 2R 2
G  R2

Putting the value of G in (i), we have

V V
Ig   Ig 1
R1  2R 2  R1 2R1 2R 2

Submitting the value of G and Ig in equation (iii), we have

V
2V  (R1 2R 2 R 2 ) 1
2R1  2R 2

4R1  4R 2  R1 2R2 R3

R 5  3R 1 2R 2

33. (B) (i) Diagram step up transformer and Working principle 1

(ii) expression for the secondary to primary voltage in terms of the 3 ( number

of turns in the two coils 3

Vs NS

Vp N P

17 XII-PHYSICS-M
(iii) When output voltage, the output current automatically decreases to keep the

power same. Thus, there is no violation of conservation of energy in a step-

up transformer. 1

18 XII-PHYSICS-M