admv8052
admv8052
ADMV8052
30 MHz to 520 MHz, Digitally Tunable Band-Pass Filter
Rev. 0
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Data Sheet ADMV8052
TABLE OF CONTENTS
REVISION HISTORY
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Data Sheet ADMV8052
SPECIFICATIONS
Table 1. Specifications
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE (fCENTER)
Band 1 30 89.9 MHz
Band 2 90 224.9 MHz
Band 3 225 520 MHz
Bypass <10 3000 MHz
BANDWIDTH (3 dB) 9 %
BANDWIDTH ADJUSTABILITY ±2 %
RESOLUTION 0.75 % Varies with respect to fCENTER, refer to Figure 17, Figure
31, and Figure 45 for more information
REJECTION (20 dB)
Low-Side 0.85 × fCENTER MHz
High-Side 1.25 × fCENTER MHz
RE-ENTRY FREQUENCY >2 GHz ≤30 dB insertion loss
INSERTION LOSS
Band 1 4.5 dB
Band 2 4 dB
Band 3 4 dB
Bypass <1 dB
RETURN LOSS 20 dB
DYNAMIC PERFORMANCE
Input Compression (P0.1dB)
Band 1 17 dBm
Band 2 15 dBm
Band 3 17 dBm
Bypass >24 dBm
Input Third-Order Intercept (IP3) Input power (PIN) = 5 dBm, f1 is Input Frequency 1, and
f2 is Input Frequency 2.
Band 1
Low-Side IP3 42 dBm f1 = 0.9 × fCENTER, f2 = 0.95 × fCENTER
High-Side IP3 43 dBm f1 = 1.05 × fCENTER, f2 = 1.1 × fCENTER
In-Band IP3 40 dBm f1 = fCENTER − 5 kHz, f2 = fCENTER + 5 kHz
Band 2
Low-Side IP3 40 dBm f1 = 0.9 × fCENTER, f2 = 0.95 × fCENTER
High-Side IP3 42 dBm f1 = 1.05 × fCENTER, f2 = 1.1 × fCENTER
In-Band IP3 37 dBm f1 = fCENTER − 5 kHz, f2 = fCENTER + 5 kHz
Band 3
Low--Side IP3 42 dBm f1 = 0.9 × fCENTER, f2 = 0.95 × fCENTER
High--Side IP3 44 dBm f1 = 1.05 × fCENTER, f2 = 1.1 × fCENTER
In-Band IP3 44 dBm f1 = fC − 5 kHz, f2 = fCENTER + 5 kHz
Bypass
In-Band IP3 53 dBm f1 = fC − 5 kHz, f2 = fCENTER + 5 kHz
Group Delay 160 ns Measured at fCENTER = 30 MHz
Amplitude Settling Time <10 µs To within ≤1 dB of static insertion loss
Phase Settling Time <15 µs To within ≤2° of static phase
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Data Sheet ADMV8052
SPECIFICATIONS
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Data Sheet ADMV8052
SPECIFICATIONS
TIMING SPECIFICATIONS
1 The ADMV8052 is capable of faster SCLK cycle times. Contact [email protected] for more guidance regarding recommended chip implementation.
Timing Diagram
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Data Sheet ADMV8052
ABSOLUTE MAXIMUM RATINGS
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Data Sheet ADMV8052
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
BAND 1
Figure 4. Insertion Loss vs. RF Frequency for Nominal Bandwidth and Figure 7. Insertion Loss vs. RF Frequency for Nominal Bandwidth at Various
Various Center Frequencies Temperatures and Center Frequencies
Figure 5. Insertion Loss and Return Loss vs. RF Frequency for Nominal Figure 8. Insertion Loss and Return Loss vs. RF Frequency for Nominal
Bandwidth at 30 MHz Bandwidth at 89.9 MHz
Figure 6. Insertion Loss and Group Delay vs. RF Frequency at 30 MHz for Figure 9. Insertion Loss and Group Delay vs. RF Frequency at 89.9 MHz for
Various Bandwidths Various Bandwidths
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 10. Percentage Away from fCENTER for Lower 20 dB Rejection vs. Figure 13. Percentage Away from fCENTER for Upper 20 dB Rejection vs.
RF Frequency for Various Bandwidths RF Frequency for Various Bandwidths
Figure 11. Input P0.1dB vs. RF Frequency for Various Bandwidths Figure 14. Input P0.1dB vs. RF Frequency for Nominal Bandwidth and
Various Temperatures
Figure 12. Low-Side and High-Side Input IP3 vs. RF Frequency for Nominal
Bandwidth (See the Specifications Section for Further Information) Figure 15. In-Band Input IP3 vs. RF Frequency for Nominal Bandwidth
and Various Temperatures (See the Specifications Section for Further
Information)
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
BAND 2
Figure 18. Insertion Loss vs. RF Frequency for Nominal Bandwidth and Figure 21. Insertion Loss vs. RF Frequency for Nominal Bandwidth and
Various Center Frequencies Various Temperatures and Center Frequencies
Figure 19. Insertion Loss and Return Loss vs. RF Frequency for Nominal Figure 22. Insertion Loss and Return Loss vs. RF Frequency for Nominal
Bandwidth at 90 MHz Bandwidth at 224.9 MHz
Figure 20. Insertion Loss and Group Delay vs. RF Frequency at 90 MHz and Figure 23. Insertion Loss and Group Delay vs. RF Frequency at 224.9 MHz
Various Bandwidths
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 24. Percentage Away from fCENTER for Lower 20 dB Rejection vs. Figure 27. Percentage Away from fCENTER for Upper 20 dB Rejection vs.
RF Frequency for Various Bandwidths RF Frequency for Various Bandwidths
Figure 25. Input P0.1dB vs. RF Frequency for Various Bandwidths Figure 28. Input P0.1dB vs. RF Frequency for Nominal Bandwidth and
Various Temperatures
Figure 26. Low-Side and High-Side Input IP3 vs. RF Frequency for Nominal
Bandwidth (See the Specifications Section for Further Information) Figure 29. In-Band Input IP3 vs. RF Frequency for Nominal Bandwidth
and Various Temperatures (See the Specifications Section for Further
Information)
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
BAND 3
Figure 32. Insertion Loss vs. RF Frequency for Nominal Bandwidth and Figure 35. Insertion Loss vs. RF Frequency for Nominal Bandwidth and
Various Center Frequencies Various Temperatures and Center Frequencies
Figure 33. Insertion Loss and Return Loss vs. RF Frequency for Nominal Figure 36. Insertion Loss and Return Loss vs. RF Frequency for Nominal
Bandwidth at 225 MHz Bandwidth at 520 MHz
Figure 34. Insertion Loss and Group Delay vs. RF Frequency at 225 MHz for Figure 37. Insertion Loss and Group Delay vs. RF Frequency at 520 MHz for
Various Bandwidths Various Bandwidths
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 38. Percentage Away from fCENTER for Lower 20 dB Rejection vs. Figure 41. Percentage Away from fCENTER for Upper 20 dB Rejection vs.
RF Frequency for Various Bandwidths RF Frequency for Various Bandwidths
Figure 39. Input P0.1dB vs. RF Frequency for Various Bandwidths Figure 42. Input P0.1dB vs. RF Frequency for Nominal Bandwidth and
Various Temperatures
Figure 40. Low-Side and High-Side Input IP3 vs. RF Frequency for Nominal
Bandwidth (See the Specifications Section for Further Information) Figure 43. In-Band Input IP3 vs. RF Frequency for Nominal Bandwidth
and Various Temperatures (See the Specifications Section for Further
Information)
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
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Data Sheet ADMV8052
TYPICAL PERFORMANCE CHARACTERISTICS
BYPASS CONFIGURATION
Figure 46. Insertion Loss vs. RF Frequency for Various Temperatures Figure 47. In-Band Input IP3 vs. RF Frequency for Nominal Bandwidth and
Various Temperatures
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Data Sheet ADMV8052
THEORY OF OPERATION
CHIP ARCHITECTURE
The ADMV8052 contains three BPFs and an optional bypass con-
figuration selectable by two SP4T switches. The device provides
full coverage over the 30 MHz to 520 MHz frequency band without
any dead zones. Figure 1 is a conceptual block diagram of the
ADMV8052.
Each band within the ADMV8052 contains several switched capaci- Figure 49. Model of a Capacitor
tors that allow the RF performance to vary. Figure 48 details the
simplified diagram of the filter architecture. SPI CONFIGURATION
The SPI of the ADMV8052 allows configuration of the device for
specific functions or operations via the 5-pin SPI port. This interface
provides users with added flexibility and customization. The SPI
consists of five control lines: SFL, SCLK, SDI, SDO, and CS. For
normal SPI operations, keep the SFL pin low.
Figure 48. Simplified Filter Architecture Diagram The SPI protocol consists of an R/W bit followed by 15 register
address bits and 8 data bits. The address field and data field are
The two center frequency capacitors (CFC) are configured by the
organized MSB first and end with the LSB.
fCENTER load value, which manipulates the fCENTER of the filter.
Likewise, the bandwidth capacitor (CBW) is configured by the band- Set the MSB to 0 for a write operation and set the MSB to 1 for a
width load value, which adjusts the bandwidth response of the read operation. The write cycle must be sampled on the rising edge
filter. Additionally, the two match capacitors (CMATCH) are set by the of SCLK. The 24 bits of the serial write address and data are shifted
match load value, which allows adjustments to impedance matching in on the SDI control line, MSB to LSB. The ADMV8052 input logic
of the filter. level for the write cycle supports a 3.3 V interface.
The fCENTER, bandwidth, and match load values each have 256 For a read cycle, the R/W bit and the 15 register address bits shift
states (8 bits). In theory, there are over 16 million possible states for in on the rising edge of SCLK on the SDI control line. Then, 8 bits of
fCENTER, bandwidth, and match load values for each band within the serial read data shift out on the SDO control line, MSB first, on the
ADMV8052. To simplify selection of these values, Analog Devices falling edge of SCLK. The output logic level for a read cycle is 3.3
has developed three patent pending interpolation functions to ease V. The output drivers of the SDO are enabled after the last rising
implementation. edge of SCLK of the instruction cycle and remain active until the
end of the read cycle. In a read operation, when CS is deasserted,
RF CONNECTIONS SDO returns to high impedance until the next read transaction. CS
The RF1 and RF2 pins of the ADMV8052 are DC-coupled to on- is active low and must be deasserted at the end of the write or read
chip RF switches. If a DC voltage is present on the RF1 and RF2 sequence.
pins from other components within the system, it is recommended An active low input on CS starts and gates a communication
to place DC blocking capacitors in series with these pins. The cycle. The CS pin allows more than one device to be used on the
DC blocking capacitors must be selected based on the operating same serial communications lines. The SDO pin goes to a high
frequency of the filter. Generally, a value greater than 10 nF is suffi- impedance state when the CS input is high. During the communica-
cient to minimize insertion loss at the lower operating frequencies. tion cycle, the chip select must stay low. The SPI communications
At higher operating frequencies, it may be necessary to consider protocol follows the Analog Devices SPI standard. For more infor-
the parasitic elements of the selected capacitor. Figure 49 shows a mation, see the ADI-SPI Serial Control Interface Standard (Rev
general model of a capacitor with the parasitic elements. The para- 1.0).
sitic series inductance (LESL) is typically of most concern given that
its impedance can become dominant. The other parasitic elements,
including the leakage resistance (RL), the dielectric absorption
resistance (RDA), the dielectric absorption capacitance (CDA), and
electrical series resistance (RESR) are less critical elements for
consideration but are shown within Figure 49 for completeness.
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Data Sheet ADMV8052
THEORY OF OPERATION
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THEORY OF OPERATION
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THEORY OF OPERATION
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THEORY OF OPERATION
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THEORY OF OPERATION
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Data Sheet ADMV8052
APPLICATIONS INFORMATION
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Data Sheet ADMV8052
FLOWCHARTS
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FLOWCHARTS
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Data Sheet ADMV8052
REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER SUMMARY
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
Note that the LUT1_SW to LUT127_MATCH bit field functionality (Register 0x104 to Register 0x2FF) is identical to the LUT0_SW to
LUT0_MATCH bit field functionality (Register 0x100 to Register 0x103). See the Register Summary section for register address information.
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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REGISTER DETAILS
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Data Sheet ADMV8052
OUTLINE DIMENSIONS
EVALUATION BOARDS
1 Z = RoHS-Compliant Part.
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registered trademarks are the property of their respective owners.
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