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13 views

electronics

Uploaded by

yomnamekawe
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Difference between BJT and Field effect transistor (FET):

The Bipolar Junction Transistor (BJT) and the Field Effect Transistor (FET) are both widely used
types of transistors, but they differ significantly in their operation, characteristics, and
applications. Here’s a detailed comparison:

1-1) Construction of n-channel JFET:

The n-channel Junction Field Effect Transistor (JFET) is a type of transistor where the current flows
through an n-type semiconductor channel, controlled by the voltage applied to a p-type gate.
Here's a detailed explanation of its construction:

Basic Structure: The n-channel JFET consists of the


following main parts:

• Substrate/Channel: A bar of n-type semiconductor


material forms the main conduction path (channel)
for electrons.
• Gate: Two p-type regions are diffused into the n-
type channel, forming a p-n junction at each side.
These regions are connected to form a single gate
terminal.
• Source: One end of the n-type channel is
connected to the source terminal, where electrons
enter the channel.
• Drain: The other end of the n-type channel is connected to the drain terminal, where
electrons exit the channel.

1-2) Operation of n-channel JFET:

The operation of an n-channel Junction Field Effect Transistor (JFET) depends on the voltage
applied between the terminals: Gate (G), Source (S), and Drain (D). Here's how it works step by
step:

a) Ohmic Region (Linear Region):


When the drain-source voltage (VDS) is small and the gate-source voltage (VGS) is zero or slightly
negative:

• The channel is wide, and current flows linearly between the source and drain.
• The current (ID) increases proportionally with VDS.
• This region behaves like a resistor.

b) Active Region (Saturation Region):


As VDS increases:

• The depletion region around the gate widens, narrowing the conductive channel.
• The current (ID) becomes almost constant and independent of VDS, controlled by VGS.
Gate Control (VGS):

• A negative VGS further widens the depletion region, reducing the effective channel width
and limiting ID.
• At a certain negative VGS, called the cutoff voltage (VGS (off)), the channel is completely
"pinched off," and current stops flowing.

c) Cutoff Region:
When VGS is sufficiently negative (VGS< VGS (off)):

• The depletion regions from both sides of the gate meet, "pinching off" the channel.
• The drain current (ID) is effectively zero.
Working Principle:
When a voltage is applied between the drain and source terminals, electrons flow through the n-
type channel.
The gate voltage (VGS) controls the size of the depletion
region.

• No Gate Voltage (VGS=0): The channel is at its


maximum width, allowing the highest current (ID) to
flow.
• Negative Gate Voltage (VGS<0): The depletion regions
expand, narrowing the channel and reducing ID.
• Cutoff: When VGS is sufficiently negative, the
depletion regions pinch off the channel completely,
stopping current flow.

1-3) I-V (input and output) characteristic curve:


The output characteristics of the JFET were plots between drain current (Id) and drain source
voltage (V ds). These characteristics find the variation of drain current concerning the voltage
applied at the drain-source terminals while keeping the gate-source voltage constant.
Basically, the characteristics are of two types: output characteristics, or drain characteristics, and
transfer characteristics.
1-4) Difference between JFET and MOSFET:

1-5) Application for using MOSFET circuits:

1-6) Project that using MOSFET


Transistor:
(Solar-Powered Battery Charger Using MOSFET)

The project involves stepping down the high voltage


from a solar panel to match the battery's charging
voltage. A MOSFET acts as a high-speed switch in the
buck converter circuit, enabling efficient energy transfer.
Components Required:
• MOSFET: (e.g., IRF540 or IRLZ44N) for the buck converter.
• Solar Panel: Provides DC voltage (e.g., 18V for a 12V system).
• Battery: Rechargeable battery (e.g., 12V lead-acid or Li-ion).
• Microcontroller: (e.g., Arduino) for PWM generation and monitoring.
• Inductor: Used in the buck converter to store energy.
• Capacitors: For smoothing output voltage.
• Diode: Fast-recovery diode to prevent reverse current.
• Resistors: For current sensing and circuit design.
• Voltage Sensors: For monitoring input and output voltages.

Circuit Description:
Solar Panel Input:

• The solar panel generates DC voltage, which varies depending on sunlight intensity.
Buck Converter with MOSFET:

• The MOSFET is driven by a PWM signal generated by the microcontroller.


• The inductor and capacitor form a low-pass filter to smooth the pulsed output of the
MOSFET into a steady DC voltage.
Battery Charging:

• The output of the buck converter is adjusted to match the battery's charging voltage (e.g.,
14.4V for a 12V lead-acid battery).
• The current is limited to prevent overcharging.
Feedback Control:

• A voltage sensor monitors the output voltage.


• The microcontroller adjusts the PWM duty cycle to maintain a stable charging voltage.

Operation:
• The solar panel provides a variable DC voltage.
• The microcontroller generates a PWM signal to control the MOSFET.
• The buck converter steps down the voltage to charge the battery efficiently.
• If the battery is fully charged, the system reduces the PWM duty cycle to prevent
overcharging.

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