General Purpose Transistors

ASS8050-L-HF Thru. ASS8050-H-HF (NPN)

RoHS Device
Halogen Free

Features
SOT-23
- Epoxy meets UL-94 V-0 flammability rating.
0.118(3.00)
- Moisture sensitivity Level 1. 0.110(2.80)

3
- AEC-Q101 Qualified.
0.055(1.40)
0.047(1.20)

1 2
0.079(2.00)
0.071(1.80)
Mechanical data 0.008(0.20)
0.004(0.10)

- Case: SOT-23, molded plastic. 0.004(0.10)

0.100(2.55)
0.000(0.00) 0.089(2.25)
- Terminals: Tin plated leads, solderable per
0.041(1.05)
J-STD-002 and JESD22-B102. 0.035(0.90)

0.020(0.50) 0.020(0.50)
0.012(0.30) 0.012(0.30)

Circuit Diagram Dimensions in inches and (millimeter)

1. Base
2. Emitter 3
3. Collector

1 2

Maximum Ratings (at T =25°C unless otherwise noted)

A

Parameter Symbol Value Unit

Collector-base voltage VCBO 40 V

Collector-emitter voltage VCEO 25 V

Emitter-base voltage VEBO 5 V

Collector current-continuous IC 1.5 A

Total device dissipation PD 300 mW

Junction temperature TJ 150 °C

Storage temperature range TSTG -55 to +150 °C

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General Purpose Transistors
Electrical Characteristics (at T =25°C unless otherwise noted)
A

Parameter Symbol Conditions Min Max Unit

Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE = 0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC = 100μA, IB = 0 25 V

Emitter-base breakdown voltage V(BR)EBO IE = 100μA, IC = 0 5 V

Collector cut-off current ICBO VCB = 40V, IE = 0 100 nA

Collector cut-off current ICEO VCE = 20V, IB = 0 100 nA

Emitter cut-off current IEBO VEB = 5V, IC = 0 100 nA

hFE(1) VCE = 1V, IC = 100mA 120 350

DC current gain
hFE(2) VCE = 1V, IC = 800mA 40

Collector-emitter saturation voltage VCE(sat) IC = 800mA, IB = 80mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC = 800mA, IB = 80mA 1.2 V

Small-signal characteristics

Transition frequency fT VCE = 10Vdc, IC = 50mA, f = 30MHz 100 MHz

Classification of hFE (1)

Rank ASS8050-L-HF ASS8050-H-HF

Range 120-200 200-350

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General Purpose Transistors
Rating and Characteristic Curves (ASS8050-L-HF Thru. ASS8050-H-HF)

Fig.1 - Static Characteristic Fig.2 - DC Current Gain

140 1000
Common
Common Emitter
500µA Emitter
VCE=1V
Ta = 25°C
120 450µA
Collector Current, IC (mA)

ASS8050-H-HF

DC Current Gain, hFE

400µA
100
350µA

80 300µA
ASS8050-L-HF
100
250µA
60
200µA

40 150µA

100µA
20
IB=50µA Ta=25°C
0 10
0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000

Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA)

Fig.3 - Base-Emitter Saturation Voltage Fig.4 - Collector-Emitter Saturation

vs. Collector Current Voltage vs. Collector Current
Base-Emitter Saturation Voltage, VBE(sat) (V)

1.2 1
Collector-Emitter Saturation Voltage,

1.0

Ta=25°C 0.1
VCE(sat) (v)

0.8
Ta=25°C

0.6
0.01

0.4

IC/IB=10 IC/IB=10
0.2 1E-3
1 10 100 1000 1 10 100 1000

Collector Current, Ic (mA) Collector Current, Ic (mA)

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General Purpose Transistors

Reel Taping Specification

P0 P1

d
E

F
W
B

C
P 12
0 A
o

D2 D1 D

W1

SYMBOL A B C d D D1 D2
1.50 + 0.10
SOT-23 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10
− 0.00
178.00 ± 1.00 54.60 ± 1.00 13.30 ± 1.00

0.059 + 0.004
(inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004
− 0.000
7.008 ± 0.039 2.150 ± 0.039 0.524 ± 0.039

SYMBOL E F P P0 P1 W W1
8.00 + 0.30
SOT-23 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05
− 0.10
11.10 ± 0.20

0.315 + 0.012
(inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002
− 0.004
0.437 ± 0.008

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General Purpose Transistors

Marking Code

Part Number Marking Code 3

ASS8050-L-HF

ASS8050-H-HF
Y1 L

Y1
XX
1 2
xx/xxxx = Product type marking code

Suggested PAD Layout

B
SOT-23
SIZE
(mm) (inch) A

A 0.90 0.035
D E
B 0.80 0.031

C 0.95 0.037

D 2.00 0.079
C C
E 2.90 0.114
Note: 1. The pad layout is for reference purposes only.

Standard Packaging

REEL PACK
Case Type REEL Reel Size
(pcs) (inch)

SOT-23 3,000 7

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Mouser Electronics

Authorized Distributor

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ASS8050-H-HF ASS8050-J-HF ASS8050-L-HF