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analog electronic circuits 2

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14 views63 pages

analog electronic circuits 2

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Analog electronic circuits (BVL302)

MOSFET Amplifier Configurations

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Three Basic Configurations


1)Common Source(CS)/Grounded Source Amplifier

• Source terminal is connected to


ground.
• i/p signal Vi is applied b/w gate &
ground.
• O/p vtg signal to is taken b/w drain &
ground across resistance RD
• popular mos amplifies configuration.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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MOSFET
2)Common Gate(CG)/Grounded Gate Amplifier

• Gate terminal is connected to ground.


• i/p signal Vi is applied b/w source &
ground.
• O/p vtg signal to is taken across
resistance RD b/w drain & ground

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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MOSFET
3)Common Drain(CD)/Grounded Drain Amplifier

• Drain terminal is connected to ground.


• i/p signal Vi is applied b/w gate &
ground.
• O/p vtg signal to is taken b/w source
& ground across load resistance RL
• Also called Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Characterizing Amplifiers
1. The amplifier is with a signal source having an open-circuit
voltage Vsig and an internal resistance Rsig. These are the
parameters of an actual signal source. Similarly, RL, is an load
resistance.

2. Parameters Ri, Ro Avs, Ais, and G, pertain to the amplifier


proper; that is, they do not depend on the values of Rsig and RL.
By contrast, Rin Rout, Av, Aj ,Gvo, and G, may depend on one or
both of Rsig and RL.
3. As mentioned above, for nonunilateral amplifiers, Rin may depend on RL and Rout may depend on Rsig.
No such dependencies exist for unilateral amplifiers, for which Rin = R, and Rout = Ro

4. The loading of the amplifier on the signal source is determined by the input resistance Rin. The value of
Rin determines the current that the amplifier draws from the signal source. It also determines the
proportion of the signal vsig that appears at the input of the amplifier.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Characterizing Amplifiers
• Figure shows an amplifier fed with a signal source having an open- circuit
voltage Vsig and an internal resistance Rsig
• These can be the parameters of an actual signal source,
• The amplifier is shown with a load resistance R L, connected to the output
terminal
• Here, RL, can be an actual load resistance or the input resistance of a
succeeding amplifier stage in a cascade amplifier.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Characterizing Amplifiers
• Figure shows the amplifier circuit with the
amplifier block replaced by its equivalent-
circuit model.
1. The input resistance Rin​ represents the
loading effect of the amplifier input on the
signal source.

• Rin​ and Rsig​ forms a voltage divider


This setup demonstrates how the input resistance of an amplifier affects the signal source
and how it forms part of a voltage divider.
➢ Together with resistance Rsig

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Characterizing Amplifiers
2. The second parameter in characterizing amplifier performance is the open-circuit voltage
gain Avo

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Characterizing Amplifiers
3. Output resistance Ro.
Ro​ is the resistance seen looking back into the amplifier output terminal with vi set to zero.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


MODULE-2

Characterizing Amplifiers
Overall Vtg​ gain,

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source (CS) Amplifier
• Most widely used
• Amplifier formed by cascading a no of stages, the bulk of the voltage gain is
obtained by using one or more CS stages in cascade.
• Consider CS amplifier fed with a signal source vsig having a source resistance
Rsig
• MOSFET replaced with hybrid-π model.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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The Characteristic Parameters are
1. The input resistance is
2. The output voltage is found by multiplying the current by the total
resistance between the output node and ground,

3. Since vgs=vi, the open-circuit voltage gain can be obtained as

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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The Characteristic Parameters are
4. Output resistance Ro.
Ro​ is the resistance seen looking back into the amplifier output terminal with vi set to zero.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Conclusion

• The input resistance is ideally infinite.


• The output resistance is moderate to high.

• The open-circuit voltage gain can be high, making the CS configuration the workhorse in
MOS amplifier design
• BW of CS amplifier is severally limited.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Overall Voltage Gain

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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance

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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance

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Common-Source Amplifier with a Source Resistance

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance
Benefit of included Rs
1) value of Rs, control magnitude of signal Vgs.
• If Vgs is too large & cause unacceptably high non-linear distortion.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance

•Rs reduces Vtg gain by factor (1+gmRs)


•Factor (1+gmRs) amount of -ve feedback introduced by Rs.
•Also same factor by which bandwidth & other performance parameters improve.
•Because of -ve feedback action of Rs it is known as a source-degeneration
resistance.
Bangalore Institute of Technology Dept. of EE(VDT), BIT
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Common-Source Amplifier with a Source Resistance

•Effective transconductance with Rs included.

•i.e. including Rs reduces transconductance by factor (1+gmRs).

•is the result, only a fraction of 1/(gmRs)​ of Vi appears as Vgs.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Source Amplifier with a Source Resistance

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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The Need for Voltage Buffers

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower
Applications
• In design are both small - signal amplifiers & amplifiers that required to
handle large signals & deliver substantial amount of signal power to a
load.
• Unity -gain amplifier

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

• consider CD with bias Ckt Omitted


• it is fed with a signal generator
(Vsig, Rsig)
• RL Connected b/w source &
ground.
• RL includes (a) actual load (b) any
other resistance may present b/w
source & gnd (Eg: for biasing ckt).
• RL << other resistance. So RL
dominated.

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

• Thus Gv will be lower than unity. However, because


1/gm is usually low, the voltage gain can be close to
unity.
• The unity open-circuit voltage gain equation indicates
that the voltage at the source terminal will follow that
at the input, hence the name source follower.
Avo =1

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower
➢ In conclusion, the source follower features a very high input resistance
(ideally, infinite), a relatively low output resistance, and an open-circuit
voltage gain that is near unity (ideally, unity).

➢ Thus the source follower is ideally suited for implementing the unity-gain
voltage buffer.

➢ The source follower is also used as the output (i.e., last) stage in a
multistage amplifier, where its function is to equip the overall amplifier
with a low output resistance, thus enabling it to supply relatively large load
currents without loss of gain (i.e., with little reduction of output signal
level).
Bangalore Institute of Technology Dept. of EE(VDT), BIT
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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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1. The CS configuration is the best suited for realizing the bulk of the gain
required in an amplifier. Depending on the magnitude of the gain required,
either a single stage or a cascade of two or three stages can be used.
2. Including a resistor in the source lead of the CS stage provides a number of
performance improvements at the expense of gain reduction.
3. The low input resistance of the CG amplifier makes it useful only in specific
applications. It has a much better high-frequency response than the CS
amplifier. This superiority makes it useful as a high-frequency amplifier,
especially when combined with the CS circuit.
4. The source follower finds application as a voltage buffer for connecting a
high resistance source to a low-resistance load and as the output stage in a
multistage amplifier where its purpose is to equip the amplifier with a low
output resistance.
Bangalore Institute of Technology Dept. of EE(VDT), BIT
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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Common-Drain (CD) Amplifier or Source Follower

Bangalore Institute of Technology Dept. of EE(VDT), BIT


MODULE-2
MOSFET Internal Capacitances & High-freq Model
• 2 types of Internal Capacitances in MOSFET
1. Gate capacitive effect
2. S-B & D-B depletion layer capacitances

Bangalore Institute of Technology Dept. of EE(VDT), BIT


MODULE-2
1. Gate capacitive effect---Cgs, Cgd, Cgb
a. MOSFET- Linear region

b. MOSFET- Saturation region

c. MOSFET- Cutoff region

d. Overlap Capacitance

Bangalore Institute of Technology Dept. of EE(VDT), BIT


MODULE-2

2. Junction capacitances---Csb, Cdb


a. Source Diffusion/ Source-Body Capacitance

b. Drain Diffusion/ Drain-Body Capacitance

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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High- freq MOSFET Model

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Freq Response of the CS Amplifier

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Freq Response of the CS Amplifier

Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Freq Response of the CS Amplifier

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Freq Response of the CS Amplifier

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Maximum Transfer Theorem

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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT


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Bangalore Institute of Technology Dept. of EE(VDT), BIT

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