The Field Effect Transistor

1. Introduction

The Field Effect Transistor (FET) has a long story from concept to the first physical implementation. The idea
of a field effect transistor was first presented and patented in 1926 by the physicist Julius Edgar Lilienfeld. In
1935, the electrical engineer and inventor Oskar Heil described the possibility of controlling the resistance in a
semiconducting material with an electric field in a British patent. A team from Bell Labs formed by John
Bardeen and Walter Houser Brattain under the supervision of William Shockley observed and described the
transistor effect in 1947. Their trying to build a working FET was unsuccessful, but they accidentally
discovered the point-contact transistor. This epochal invention was followed by Shockley’s bipolar junction
transistor (BJT) in 1948.
In 1945, Heinrich Welker patented for the first time a Junction Field Effect Transistor (JFET). A Japanese team
formed by Y. Watanabe and professor Jun-Ichi Nishizawa of Tohoku University patented the Static Induction
Transistor (SIT) in 1950. The device controlled current flow by means of the static induction or electrostatic
field surrounding two opposed gates (it was conceived as a solid-state analog of the vacuum-tube triode, and the
first SIT’s were produced in 1970 by several Japanese companies).
In 1952 William Shockley presented theoretical aspects regarding the JFET structure and its operation. Then,
the first JFET was produced as a practical device by George Clement Dacey and Ian Munro Ross from Bell
Labs in 1953, under the supervision of William Shockley.
In 1959, Mohamed M. Atalla and Dawon Kahng from Bell Labs invented the Metal Oxide Semiconductor Field
Effect Transistor (MOSFET). This is the basic component used in digital electronics, and is the most frequently
manufactured device in the history (about 1.3×1022 MOSFETs were manufactured between 1960 and 2018).

2. FET brief theory

Currently, there are two types of Field Effect Transistors (FET’s) that are manufactured on a large scale: the
Junction Field Effect Transistor (JFET) and the Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
The basic material used to produce these transistors is silicon. Depending on the impurities introduced into the
silicon in the manufacturing process, there are 2 types of field effect transistors: with n channel and with p
channel. Thus, a single type of charge carriers will circulate through a device: electrons for n-channel
transistors, and holes for p-channel transistors. For this reason the field effect transistors are called unipolar
devices. Because the mobility of the electron is greater than the mobility of the hole, n-channel transistors
(through which the electrons flow) are faster than p-channel transistors (through which the holes flow), and
therefore are manufactured in greater numbers.

a. The Junction Field Effect Transistor (J-FET)

The JFET is a three terminal device, which presents an area of doped silicon (n-type for n-channel JFET, p-type
for p-channel JFET) with two diffusions of the opposite doping (p-type diffusion for n-channel JFET, n-type
diffusion for n-type JFET). To allow a symmetrical control of the flow of electrical charges through the
channel, the flow control electrode (the gate) is built on both sides of the channel and it is connected to the
opposite doping areas (Fig.1).
 Fig.1.The internal structure for a JFET: a) n-channel J-FET; b) p-chanel J-FET
The terminals are: D-Drain; S-Source; G-Gate

The symbols for the n and p channel JFETS are represented in Fig.2. Although the J-FET is a symmetric device
(the source and the drain may be interchanged), there are some situations when, for a discrete component,
reversing the terminals (D and S) can damage the device. This can be identified by consulting the part datasheet
given by the manufacturer. The drain and the source are connected at either end of the channel region.

Fig.2.The electrical symbol for the JFET: a) n-channel J-FET; b) p-chanel J-FET
The terminals are: D-Drain; S-Source; G-Gate

The JFET operation is based on changing the drain current (ID) as a function of the bias voltage applied on
the pn junction between the gate and the channel (VGS) (Fig.3). Because the gate contacts are internally
connected, we have two pn junctions in parallel. The pn junctions are in reverse bias, so the gate current is
very small (order of pico-amps, IG≈0).

Fig.3.The DC bias for J-FET transistor: a) n-channel J-FET; b) p-channel J-FET

For optimal operation, the transistor needs to be biased from two external DC voltage sources: a drain-source
 voltage source (VDS) and a gate-source voltage source (VGS). The VGS source has an inverse polarity
compared to the VDS source. When a voltage is applied between the drain and the source, the current will
flow through the channel. By changing the VGS, the thickness of the channel is adjusted, and therefore a
greater or lesser number of electrical charges (electrons for n-JFET, or holes for p-JFET) will pass through
the channel, starting from the source to the drain. If VGS=0V, the device is in a normally on state and a
maximum number of electrical charges will pass through the channel. To decrease the drain current, we must
apply an appropriate voltage to the gate and use the depletion region created at the junction to control the
channel width. In conclusion, it can be seen that the JFET is a voltage controlled device. The drain and the
source currents are equal (ID=IS) (Fig.4).

1. Effects on changing VGS (VDS=ct)

In Fig.4 is represented the schematic diagram with a JFET biased from 2 voltage sources: a constant and small
VDS (the width of the channel is almost constant), and a variable VGS. The increasing width of the pn junction
depletion region (illustrated from yellow to red to blue), is due to the increasing reverse bias of the junction
resulting from the application of a |VGS| of increasing magnitude. As the depletion widths increase, the channel
width decreases, resulting in a lower conductivity (higher resistivity) of the channel. As |V GS| is increased, a
value of VGS is reached for which the channel is completely depleted (no free carriers) and no current will flow
regardless of the applied VDS. This is called the threshold, or pinch-off, voltage and occurs at VGS= VT = VP.
The threshold voltage is negative for a n-channel JFET(VP < 0) and positive for a p-channel JFET(VP > 0) .

Fig.4.The DC bias analysis at variable VGS for J-FET transistor: a) n-channel J-FET; b) p-channel J-FET

2. Effects on changing VDS (VGS=0)

In Fig.5 is represented the circuit which bias the JFET with a variable V DS while VGS=0V. The VDS voltage is
positive for a n-channel JFET and negative for a p-channel JFET. We assume a constant doping so that the
voltage variation in the channel is linear. When VDS is very small, the voltage variation in the channel is very
small and it has no effect on the channel shape. For this case, the depletion region is only due to the pn junction
as shown in yellow in the figure. As |VDS| increases, the increasing potential at the drain reverse biases the pn
junctions. Since the voltage drop across the channel increases from source to drain, the reverse bias of the pn
junction also increases from source to drain. Since the depletion region is a function of bias, the depletion
region also gets wider from source to drain, causing the channel to become tapered as shown in red in the
figure. The current still increases with increasing VDS, however there is no longer a linear relationship between
VDS and ID since the channel resistance is a function of its width. Further increases in VDS, for example, blue in
the figure, result in a more tapered shape to the channel and increasing nonlinearities in the ID - VDS
relationship. This process continues until a VDS is reached where the depletion regions from the pn junctions
merge. Analytically, this occurs when the gate-to-drain voltage VGD is less than some threshold VT=VP and is
known as the pinch-off point. At this point, the drain current saturates and further increases in VDS result in
little (ideally zero) change in ID. For the case vGG=vGS=0, the drain current at pinch-off is called the drain-
source saturation current - IDSS. Operation beyond the pinch-off point (VDS >|VGS=VP|) defines the normal
operating or saturation region of the JFET.

Fig.5.The DC bias analysis at a variable VDS and VGS =0 for J-FET transistor:
a) n-channel J-FET; b) p-channel J-FET

If the VDS variation effect is applied, we can see that pinch-off will occur for lower values of VDS since we have
less of a channel to start with (resulting in lower values of I D at pinch-off). By combining the effect of VDS and
VGS variations, a family of characteristic curves will be generated for the JFET (Fig.6).

Fig.6.The DC output characteristics at a variable VDS and several values of VGS =ct for J-FET transistor:
a) n-channel J-FET; b) p-channel J-FET

The output characteristic for a n-channel J-FET with detailed explanations is presented in Fig.7. After the JFET
reaches saturation, ID remains relatively constant with a very small slope for further increases in VDS (the slope
of the curves would be zero for an ideal device).
 Fig.7.The complete DC output characteristics for n-channel J-FET

The transfer characteristics for n and p channel JFET’s are presented in Fig. 8.

Fig.8.The transfer characteristics for J-FET: a) n-channel J-FET; b) p-channel J-FET

Below pinch-off, the channel essentially behaves like a constant resistance. This linear region of operation is
called ohmic (or sometimes triode), and is where the JFET may be used as a voltage controlled resistor (the
control voltage in VGS). As the magnitude of VGS increases, the range of VDS where the transistor may be
operated as an ohmic resistor decreases. In the ohmic region, the potentials at all three terminals strongly affect
the drain current. The drain current is:
 V  VDS  VDS  
2

I D  I DSS  2  GS
 1    (1)
  VP  VP  VP  
Beyond the knee of the ohmic region, the curves become essentially flat in the active (or saturation) region of
operation. The transistor may be used as an amplifier in this region. To operate in the linear region, it is
standard practice to define the dc bias current as between 30% and 70% of IDSS. This locates the DC
operating point in the most linear region of the characteristic curves.
The drain current in the saturation region may be defined by using the Shockley equation:

2
 V 
I D  I DSS 1  GS   1    VDS  (2)
 VP 

The λ is known as the channel length modulation parameter. Usually, especially for large-signal analysis or
biasing, λ is small enough that |λ·VDS| << 1. The parameters IDSS and VP (sometimes called VT or VGS(OFF) on the
data sheets) are generally given by the manufacturer.

The JFET small signal AC model at low frequencies

The AC small signal model for low frequencies (below 10KHz) of the JFET is given in Fig.9. The
transconductance (gm) and the output resistance of the device (ro) are:

I D 2I  VGS 
gm   DSS 1   1  VDS  (3)
VGS VP  VP 

VDS 1
rO   (4)
I D  V 
2

I DSS 1  GS   
 VP 

The channel length modulation parameter may be neglected in some situations.

Fig.9.The AC equivalent circuit for J-FET

b. The Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

The MOSFET is a device with four terminals. It has a source (S) and a drain (D), two highly conducting n-
type semiconductor regions which are isolated from the p-type substrate (SB) by reversed-biased p-n diodes. A
metal (or poly-crystalline) gate (G) covers the region between source and drain, but is separated from the
semiconductor by a high quality gate oxide (SiO2). The basic structure of a MOSFET and the corresponding
circuit symbol are shown in Fig.10. The source and the drain regions are identical. The source provides the
electrical charges (electrons for n-MOS, holes for p-MOS), while the other n-type region (the drain) collects the
electrical charges (electrons for n-MOS, holes for p-MOS). The voltages applied to the drain and gate electrode
as well as to the substrate by means of a back contact are referred to the source potential, as also indicated on
the figure. By applying a potential between the gate (G) and the source (S) terminals, the flow of the electrical
charges from the source to the drain may be controlled.
 Fig.10.The DC biasing and the symbols for the MOSFET transistor:
a) n-channel MOSFET; b) p-channel MOSFET

For the discrete MOSFET transistors which are commercially available, the substrate (SB) is internally
connected together with the source (S), so the drain and source are not interchangeable in practice.Their
symbols are presented in Fig.11.

Fig.11.The electrical symbol for the discrete MOSFET transistor:

a) n-channel MOSFET; b) p-channel MOSFET

Current flow in a MOS device is a function of several material, structural, and bias parameters, including
(Fig.12): the channel length L, which is the separation distance between the source and drain; the channel width
W, charge mobilities within the active channel region (µn for electrons or µp for holes); the capacitance of the
oxide layer Cox, which is modeled as a parallel plate capacitor and is in turn a function of oxide layer thickness
(tox) and permittivity (σ); the gate-source potential VGS; the drain to source bias VDS; and the threshold voltage
VT. The threshold voltage is dependent on the impurity concentration of the channel region. Additionally, since
several breakdown mechanisms associated with MOS structures are contingent on the maximum electric field
in the drain space charge region, doping criteria may become important to reduce these effects.

Fig.12.The mechanical parameters for the MOSFET transistor

 Due to the insulator layer that exists between the gate and the substrate (SiO2), we can modify the device
structure to allow two modes:
- In the depletion mode, a channel region of a material type corresponding to the majority carrier (i.e., n-
type material for NMOS and p-type material for PMOS) is physically implanted at the time of
fabrication to connect the source and drain. Recall that an active (a.k.a. conduction or inversion) channel
is required for current to flow between the source and drain, so the depletion MOSFET is in a normally
on condition until the field effect is used to turn it off. To turn a depletion type MOS transistor off, or
interrupt current flow between the source and drain, appropriate bias conditions must be generated in
order to deplete the channel region of charge carriers, thereby removing the conduction path between
source and drain.
- Conversely, in the enhancement mode, the conduction channel is created through the field effect.
Enhancement mode operation is characterized by the requirement that appropriate biasing conditions be
applied to create a conduction channel between the source and drain diffusions. In this mode of
operation, the transistor exists in a normally off state until the conduction channel is created and current
can flow between the source and drain.
By considering the majority carrier types in the semiconductor (electrons and holes) and two possible modes of
operation (depletion mode and enhancement mode) as defined above, the MOSFET device types are: depletion
NMOS transistor, depletion PMOS transistor, enhancement NMOS transistor and enhancement PMOS
transistor.

a. The n-channel depletion MOS transistor

The depletion NMOS device (Fig.13) is formed from a p-type substrate with physically implanted n-type
source, drain and channel regions. The dielectric material covers the area between the source and drain to
provide electrical isolation as mentioned earlier and allows the field-effect operation to occur. For a gate-to-
source voltage (VGS) greater than or equal to zero, the channel is active and, if a sufficiently large drain-to-
source voltage (VDS) is applied, electrons will move through the channel from the source to the drain, for a
positive drain current (ID>0).

Fig.13.The structure and the symbols of the depletion NMOS transistor

When no DC voltage is applied between the gate and the source (VGS=0), the implanted channel will remain
unchanged. If the potential between the gate and the source is increased (V GS>0), more majority carriers will be
attracted to the channel at the Si/SiO2 interface. Charges cannot move through the insulator (ideally), so a
positive applied gate bias has the effect of attracting more negative charges from the substrate to the channel.
Note that since the gate is isolated from the source (and the channel) by the oxide layer, the gate current is
negligibly small and may be considered to be zero. Now, if we have a conduction channel and apply a large
enough positive VDS(remember that this means the potential at the drain is higher than that of the source),
electrons in the channel (and source region) will be attracted to the drain. The channel size is increased,
resulting in an increased drain current.
For a negative VGS, the potential at the gate is less positive than that of the source. Usually the source is
grounded, so this means that the gate potential is negative, or that negative charges are “piled up” along the gate
contact. Since like charges repel, the negative charges on the gate push electrons out of the channel region and
into the substrate, thereby depleting the majority carriers in the channel when VGS reaches a specific magnitude
known as the threshold voltage VT. At this threshold value, the channel is considered to be completely depleted
of majority carriers and the drain current magnitude is reduced to zero for any applied VDS.

b. The p-channel depletion MOS transistor

The depletion PMOS device (Fig.14) is complementary to the depletion NMOS except the n-type and p-type
silicon designations are interchanged. This device operates exactly as discussed above, with the following
modifications:
- The conduction channel exists for VGS≤0, with the conductivity increasing for negative VGS (more holes
are attracted to the channel region. For a negative VDS of sufficient magnitude, current flows through the
channel).
- To deplete the channel in a PMOS device, a positive VGS is applied since the positive gate will repel the
holes in the channel. The channel is again pinched off at a threshold voltage VT, but instead of being a
negative as for the depletion NMOS, it is now positive with a magnitude that depends on specific
material and structural parameters. Above the threshold voltage magnitude, ID is once again zero
regardless of the applied VDS.

Fig.14.The structure and the symbols of the depletion PMOS transistor

c. The n-channel enhancement MOS transistor

The enhancement NMOS device (Fig.15) differs from the depletion NMOS by the absence of the implanted
channel.

Fig.14.The structure and the symbols of the enhancement NMOS transistor

This type of device is normally off and requires the creation of a conduction channel to allow current to flow.
For the NMOS structure, this is achieved by applying a positive VGS of sufficient magnitude (VGS>VT). The
positive gate potential attracts electrons from the substrate to the Si/SiO 2 interface under the oxide layer. This
process continues until enough electrons have been accumulated between the source and drain to increase the
conductivity to a point that a conduction channel is formed. Note that no appreciable drain current can flow
until the VGS magnitude exceeds the threshold voltage VT.
The remainder of device operation is as discussed for the depletion NMOS. Once the channel has been created,
a positive VDS will result in a drain current ID.

d. The p-channel enhancement MOS transistor

The enhancement PMOS transistor is represented in Fig.16. Because it does not have a built-in channel and
holes are the majority carriers, a negative VGS with a magnitude greater than VT must be applied to create the
conduction channel. Once the channel is created and drain current can flow, a negative VDS of appropriate
magnitude results in a negative drain current.

Fig.16.The structure and the symbols of the enhancement PMOS transistor

In Fig.17 are represented the transfer characteristics (I D(VGS)) for the depletion and enhancement n type and p
type MOSFET transistors.

Fig.17.The transfer characteristic for depletion and enhancement MOS transistors

A. Enhancement Mode MOSFET Output Characteristics

The enhancement mode MOSFET devices have the output characteristics presented in Fig.18. The following
aspects are taken into account:
- Enhancement mode devices have no built in channel (i.e., the device is normally off).
- A threshold voltage, determined by physical and fabrication parameters, exists for the MOSFET (VT > 0
for NMOS, VT < 0 for PMOS).
 - Generally, the source is grounded and is common to both gate and drain.
- An active channel is created between drain and source (the transistor is turned on) through the
application of a gate voltage of appropriate polarity and magnitude (VGS – VT > 0 for NMOS, VGS – VT <
0 for PMOS).
- Current flow between the drain and source is a function of both VGS and VDS.

a)

b)
Fig.18.The output characteristic for enhancement MOS transistors: a) N-MOSFET; b) P-MOSFET

Once the device has been turned on (VGS>VT for NMOS, VGS<VT for PMOS), current may flow between drain
and source with an applied VDS, generating individual curves for different values of VGS-VT. The MOSFET has
different operational regions, depending upon external biases. The delineation of the two regions for the
MOSFET (triode and saturation) is determined by the relationship between the applied drain-to-source voltage,
the applied gate-to-source voltage and the threshold voltage, which occurs when VDS= VGS-VT.
If |VDS|< |VGS-VT|, the transistor is operating in the triode region and the relationship between ID and VGS is
approximately linear. This allows the MOSFET to be operated as a linear resistor whose resistance is controlled
by VGS. In the triode region, the potentials at all three terminals strongly affect the drain current, and the drain
current obeys the relationship:
 I Dn  K n   2  VGS  VT  VDS  VDS
2
 (5)
1 W
Kn   n  Cox  (6)
2 L
I Dp  K p   2  VGS  VT  VDS  VDS
2
  positive value  (7)
1 W
Kp    p  Cox  (8)
2 L

If VGS is kept constant and the |VDS| is increased, voltage in the channel varies from zero (when measured at the
source) to VDS (when measured at the drain). Now, if we simultaneously consider the effect of VGS, we can see
that both sources are trying to attract charges (electrons for the n-MOSFET, holes for the p-MOSFET) and they
are essentially opposing each other. Since the gate-to-source voltage controls the channel depth, and VGS and
VDS are essentially competing for available charges, the channel does not have a uniform depth for any VDS. In
fact, the effective gate-to-source voltage decreases from the applied |VGS| at the source, to |VGS-VDS| at the drain
and the channel takes on a tapered shape.
Another way of looking at this effect is to consider the gate-to-drain voltage VGD:

VGD  VG  VD  VG  VS   VD  VS   VGS  VDS (9)

When VGS  VDS  VT for n-channel MOSFET or VGS  VDS  VT for p-channel MOSFET, the depth of the active
channel becomes zero and the channel is constrained or pinched off. This means that further increases in |VDS|
have little effect on ID (ideally, no effect).
For |VDS|>|VGS-VT| the transistor is in the normal active, or saturation region of operation, with the boundary
between the triode and saturation regions (called the knee) defined by VDS=VGS-VT. If we could have an ideal
device, the curves in the saturation region would be perfectly horizontal. The expression for the drain current of
an ideal MOSFET in saturation is:
I D  K  VGS  VT   1   VDS 
2
(10)

,where λ is the channel length modulation parameter. Often, the term |λ·VDS| << 1, so the expression becomes:

I D  K  VGS  VT 
2
(11)

The output resistance of the device (rO) is:

 v 
rO   DS  (12)
 iD 
1 1 V
rO   A (13)
K VGS  VT      ID ID
2

A. Depletion Mode MOSFET Output Characteristics

In the depletion mode, the device has the following characteristics:

- Depletion mode devices have a built in channel (the device is normally on).
- A threshold voltage, determined by physical and fabrication parameters, exists for the MOSFET (VT<0
for n-channel MOSFET, VT>0 for p-channel MOSFET)
- Generally, the source is grounded and is common to both gate and drain.
 - The active channel is depleted between drain and source (the transistor is turned off) through the
application of a gate voltage of appropriate polarity and magnitude (VGS-VT≤0 for n-channel MOSFET,
VGS-VT≥0 for p-channel MOSFET).
- Current flow between the drain and source is a function of both VGS and VDS. However, in the depletion
mode, current can flow for both positive and negative values of VGS for both NMOS and PMOS devices
until the cutoff condition is reached.
In Fig. 19 is presented the output characteristic for depletion MOS transistor.

a)

b)
Fig.19.The output characteristic for depletion MOS transistors: a) N-MOSFET; b) P-MOSFET

The equations for depletion MOS transistors are identical to the equations for the enhancement mode
transistors.
The MOSFET small signal AC model at low frequencies

The AC small signal model for low frequencies (below 10KHz) of the MOSFET is given in Fig.20. The
transconductance (gm) and the output resistance of the device (r o) are:

iD
gm   2  K  VGS  VT 1   VDS  2  K  VGS  VT  (14)
vGS

vDS 1 1
rO   (15)
iD K VGS  VT      ID
2

Fig.20.The AC equivalent circuit for MOSFET

3. Laboratory activity

a. JFET transfer characteristics

Consider the circuit given in Fig.21. The components are described in Table 8 from Annex 1. It is required
to draw and to simulate the circuit. VGS and VDS are DC voltage supplies.

Fig.21 JFET schematic for measuring the transfer characteristics

 The drain current (ID) will be measured as a function of the gate-source voltage (VGS). To do this task, a DC
Sweep… analysis will be accomplished. The primary DC Sweep voltage is VGS. It will be varied between 0 and
5V with an increment of 0.1V (Fig.22).

Fig.22 Adjusting VGS for measuring the transfer characteristics

The secondary DC sweep voltage (Nested Sweep….) is VDS. It will be varied between 5 and 25V with an
increment of 8V. The Enable Nested Sweep option will be checked (Fig.23).

Fig.23 Adjusting VDS for measuring the transfer characteristics

 After running the simulation (F11), the drain current will be displayed on Y axis. For the X axis, the
selected parameter will be the gate-source voltage which is -V_VGS: Plot-Axis Settings…-X Axis-Axis
Variable….-V_VGS (Fig.24).

Fig.24 Selecting gate-source voltage on X axis for measuring the transfer characteristics

By selecting the Toggle Cursor, the simulation results may be displayed. For the first two ID –VGS
characteristics, the current saturation occurs because of the drain resistor (R) (Fig.25).

Fig.25. The measurement of the transfer characteristics ID –VGS for the n-channel JFET
 Replace R (1K) by 100 ohms (100) and run the simulation again. Compare the results and complete Table 1.

Table 1 – JFET transfer characteristics

VDS(V) VGS(V) ID(mA)

-5
-4
5 -2.8
-1
-0.5
0
-5
-4
13 -2.8
-1
-0.5
0
-5
-4
21 -2.8
-1
-0.5
0

b. JFET output characteristics

Draw the circuit from Fig.26. It is the same circuit From Fig.21, except some minor changes. VGS and VCC
are DC voltage sources.

Fig.26 The schematic for measuring the JFET output characteristics

 The drain current (ID) will be measured as a function of the drain-source voltage (VDS). To do this task, a
DC Sweep… analysis will be accomplished. The primary DC Sweep voltage is VCC. It will be varied between 0
and 25V with an increment of 1V (Fig.27).

Fig.27 Adjusting VCC for measuring the output characteristics

The secondary DC sweep voltage (Nested Sweep….) is VGS. It will be varied between 0 and 3V with an
increment of 1V. The Enable Nested Sweep option will be checked (Fig.28).

Fig.28 Adjusting VGS for measuring the output characteristics

Then, the simulation may be run (F11). The results are displayed in Fig.29.
 Fig.29. The output characteristics for the n-channel JFET

The simulation results should be written in Table 2.

Table 2 – JFET output characteristics

VGS(V) VDS(V) ID(mA)

0
2
4
6
0 8
10
12
14
16
20
24
0
2
4
6
8
1 10
12
14
16
18
20
24
 0
2
4
2 6
8
10
12
14
16
18
20
24
0
2
4
6
8
3 10
12
14
16
18
20
24

c. MOSFET transfer characteristics

Look at the circuit from Fig.30. The components are described in Table 8 from Annex 1. It is required to draw
and to simulate the circuit. VGS and VCC are DC voltage supplies.

Fig.30. MOSFET schematic for measuring the transfer characteristics

The drain current (ID) will be measured as a function of the gate-source voltage (VGS). To do this task, a DC
Sweep… analysis will be accomplished. The primary DC Sweep voltage is VGS. It will be varied between 2 and
4V with an increment of 0.1V (Fig.31).
 Fig.31. Adjusting VGS for measuring the transfer characteristics
The secondary DC sweep voltage (Nested Sweep….) is VCC. It will be varied between 1 and 26V with an
increment of 5V. The Enable Nested Sweep option will be checked (Fig.32).

Fig.32. Adjusting VCC for measuring the transfer characteristics

The simulation results (Fig.33) are noted in Table 3.

Fig.33.The n-channel MOSFET transfer characteristics

Table 3 – MOSFET transfer characteristics

Vcc(V) VGS(V) ID(mA)

2
2.8
1 2.9
3
3.1
3.2
3.3
3.4
4
2
2.8
6 2.9
3
3.1
3.2
3.3
3.4
4
2
2.8
11 2.9
3
3.1
3.2
3.3
3.4
4
2
2.8
16 2.9
3
3.1
3.2
3.3
3.4
4
2
21 2.8
2.9
3
3.1
3.2
3.3
3.4
4
 d. MOSFET output characteristics

Draw the circuit from Fig.34. M1 is an n-channel enhancement MOSFET transistor.

Fig.34.The n-channel MOSFET schematic to measure the output characteristics

A DC sweep simulation will be performed. VCC is the primary sweep voltage with a start value of 0V, end
value of 30V, and an increment of 1V.

Fig.35.The VCC settings to measure the output characteristics

VGS is the secondary sweep voltage with a start value of 2V, end value of 4V, and an increment of 1V (Fig.36).

Fig.36.The VGS settings to measure the output characteristics

The simulation results (Fig.37) will be written in Table 4.

Fig.37.The simulation of the output characteristics for the MOSFET transistor

Table 4 – MOSFET output characteristics

VGS(V) VDS(V) ID(mA)

0
2
4
6
2 8
10
14
18
22
26
30
0
2
4
6
8
3 10
14
18
22
26
30
 0
2
4
4 6
8
10
14
18
22
26
30

e. MOSFET current source

Draw the circuit from Fig. 38.

Fig.38. A current source circuit with n-MOS transistor

A DC sweep simulation should be performed. VCC has the parameters: Start Value =10V, End Value =30V,
Increment =1.

Fig.39. The DC sweep parameters for VCC

 The results (Fig.40) should be depicted in Table 5.

Fig.40.The simulation results for the current source with n-MOS

For the measuring of VDS, you may select: V(M1:d) - V(M1:s) in the probe window (Orcad PSpice A/D
demo).

Table 5

VG (V) VCC (V) VDS(V) =VCC-VS ID(mA)

4.627 10 8.3 16.91
12
14
16
18
20
22
24
26
28
4.712 30

f. JFET AC amplifier

Consider the small signal AC amplifier which uses a n-channel JFET in the common source configuration
(Fig.41). The gate bias is made by 2 voltage sources connected in series: a negative DC voltage source (V GS)
with a value of -1V and a sine-wave voltage source (Vac), VSIN, with the parameters: VOFF =0,
VAMPL=10mV, FREQ=1k, TD=0, DF=0, PHASE=0.
 Fig.40.A small signal AC amplifier with n-channel JFET
The simulation should be performed in the time domain (Transient), for a time of about 10ms.

Fig.41. Selecting the Transient simulation for the small signal AC amplifier with n-channel JFET
The output signal may be viewed in the Probe window: OrCAD PSpice A/D Demo (Fig.42).

Fig.42.The output signal for the AC amplifier with n-channel JFET transistor
 The RMS values for the input (gate) and output (drain) amplitudes may be monitored by selecting:
(MAX(V(J1:g))- MIN(V(J1:g)))/(2*SQRT(2)) for the gate terminal and:
(MAX(V(J1:d))- MIN(V(J1:d)))/(2*SQRT(2)) for the drain terminal (Fig.43).

Fig.43.The simulation of the small signal AC amplifier with n-channel JFET transistor (RMS values)

The voltage AC gain is:

Vo Vd
Av   (16)
Vi Vg
The current gain is:
Io Id
Ai   (17)
Ii Ig
The transimpedance gain is:
Vo Vd
AZ   (18)
Ii Ig
The transadmitance gain is:
Io Id
AY   (19)
Vi Vg

Measure the voltages and calculate the AC gains for the amplifier. Compare the phase between the signals. The
results should be depicted in Table 6.
 Table 6

RMS values AV AI AZ(kΩ) AY(kΩ-1)

Vg(mV)=
Vd(mV) =
Ig(mA) =
Id(mA) =

g. MOSFET AC amplifier

Consider the small signal AC amplifier which uses a n-channel MOSFET in the common source configuration
(Fig.44). The gate bias is made by 2 voltage sources connected in series: a positive DC voltage source (VGS)
with a value of 2.9V and a sine-wave voltage source (Vac), VSIN, with the parameters: VOFF =0,
VAMPL=10mV, FREQ=1k, TD=0, DF=0, PHASE=0.

Fig.44.The schematic of the small signal AC amplifier with n-channel MOSFET

The simulation is accomplished in the time domain (Transient Analysis).

Fig.45.Setting the time domain analysis for the small signal AC amplifier with n-channel MOSFET

Then, the input and the output voltages may be displayed in the Probe window (Fig.46).
 Fig.46.The input and output waveforms for the small signal AC amplifier with n-channel MOSFET

The RMS values for the input (gate) and output (drain) amplitudes may be monitored by selecting:
(MAX(V(M1:g))- MIN(V(M1:g)))/(2*SQRT(2)) for the gate terminal and:
(MAX(V(M1:d))- MIN(V(M1:d)))/(2*SQRT(2)) for the drain terminal (Fig.47).

Fig.47.The RMS voltages for the small signal AC amplifier with n-channel MOSFET

By using Eq. 16-19, the AC gains for the amplifier may be calculated. The results will be displayed after the
calculus in Table 7.
 Table 7

RMS values AV AI AZ(kΩ) AY(kΩ-1)

Vg(mV)=
Vd(mV) =
Ig(mA) =
Id(mA) =

Exercises
1. Compare the AC gains for the JFET and the MOSFET amplifiers.
2. Measure and compare the input impedance for the JFET and for the MOSFET amplifiers.
3. What is the phase shift between the output and the input signals for the JFET and for the MOSFET
amplifiers?
4. Compare the drain DC currents for the JFET and the MOSFET.

Annex 1

Table 8
Po Component type Value Library
s.
Numerical value is taken from the laboratory platform.
- Mili-ohms if m is written after the numerical value
1. R (resistor) - Ohms if nothing is written after the numerical value Analog.slb
- Kilo-ohms if k is written immediately after the numerical value
- Mega-ohms if meg is written immediately after the numerical
value
2. J1 J2N3819 (n-JFET) Eval.slb
3. M1 IRF150 (n-MOSFET) Eval.slb
4. VSIN (used to - DC: the DC component of the sine wave
function as a - AC: the AC value of the sine wave.
signal generator, - VOFF: the DC offset value (set to zero if you need a pure
sine-wave sinusoid).
voltage source - VAMPL: the undamped amplitude of the sinusoid; i.e., the peak
for time domain value measured from zero if there were no DC offset value. Source.slb
analysis) - FREQ: the frequency in Hz of the sinusoid.
- TD: the time delay in seconds (set to zero for the normal
sinusoid).
- DF: damping factor (set to zero for the normal sinusoid).
- PHASE: phase advance in degrees (set to 90 if you need a cosine
wave form).
Note: the normal usage of this source type is to set VOFF, TD and DF to
zero as this will give you a 'nice' sine wave.
5. VDC (simple - Value in volts. Source.slb
DC voltage
source)
6. GND_ANALOG - Ground (node potential is 0 volts). Port.slb
- It is mandatory to be used in any PSpice schematic!
Bibliography

1. Cadence Design Systems, PSpice User’s guide, Second Edition, 31 May 2000, Portland, Oregon, USA
2. https://coefs.uncc.edu/dlsharer/files/2012/04/J3a.pdf
3. https://coefs.uncc.edu/dlsharer/files/2012/04/J3b.pdf