An Introduction to Semiconductor Devices Chapter 4

Solutions Manual Problem Solutions

______________________________________________________________________________________

Chapter 4
Problem Solutions
or
−3
N d = 4.63x10 cm
13
4.1
−3
(a) no = N d = 5 x10 cm
15
(d)
ni
2
b15. x10 g 10 2
σ ≈ eμ p pO ⇒
b g(480) p
−3
po = = = 4.5 x10 cm
4
−19
no 5 x10
15
0.01 = 1.6 x10 O

(b) or
−3
μ n ≈ 1200 cm / V − s pO = 1.30 x10 cm = N a − N d = N a − 10
2 14 15

Then or
J drf ≈ eμ n no ε N a = 113
. x10 cm
15 −3

b
= 1.6 x10
−19
g(1200)b5x10 g(30) 15
Note: For the doping concentrations obtained,
the assumed mobility values are valid.
or _______________________________________
J drf = 28.8 A / cm
2

(c) 4.3
−3 ρL L
po = N a = 5 x10 cm and σ ≈ eμ n N d
16
(a) R = =
Then A σA
For N d = 5x10 cm , μ n ≈ 1100 cm / V − s
16 −3 2
−3
no = 4.5 x10 cm
3

Now Then
J drf ≈ eμ p po ε 0.1
R=
We find μ p ≈ 380 cm / V − s
2
b g
1.6 x10 (1100) 5 x10 10 x10
−19 16 −4 2
b gb g
So or
b
J drf = 1.6 x10
−19
g(380)b5x10 g(30) 16

Then
R = 1136
. x10 Ω
4

or
V 5
J drf = 91.2 A / cm
2
I= = 4
⇒ I = 0.44 mA
_______________________________________ R 1136
. x10
(b)
4.2 In this case
(a) V = IR ⇒ 10 = (0.1R ) ⇒ R = 1136
. x10 Ω
3

R = 100 Ω Then
(b) V 5
I= = 3
⇒ I = 4.4 mA
L L R . x10
1136
R= ⇒σ = ⇒ (c)
σA RA

σ=
10
−3
ε =V
(100) 10 −3b g⇒ L

σ = 0.01 (Ω − cm)
−1 For (a), ε= 5
= 50 V / cm
0.10
(c) And
σ ≈ eμ n N d v d = μ n ε = (1100)(50) or v d = 5.5x10 cm / s
4

or
b
0.01 = 1.6 x10
−19
g(1350) N d
For (b), ε =V
L
=
5
0.01
= 500 V / cm

44
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

And Then
v d = (1100)(500) ⇒ vd = 5.5x10 cm / s
5 −4
d 10 −11
tt = = ⇒ t t = 8.33x10 s
_______________________________________ vd 1.2 x10
6

For GaAs, v d = 7.5x10 cm / s

6
4.4
(a) Then
GaAs, μ n = 8500 cm / V − s
2 −4
d 10 −11

Now tt = = 6
⇒ t t = 1.33 x10 s
vd 7.5 x10
σ ≅ eμ n N d
(b)
b
= 1.6 x10
−19
g(8500)b10 g = 1.36 (Ω − cm)
15 −1
Silicon: For ε = 50 kV / cm ,
v d = 9.5x10 cm / s
6
Then
F L I I ⇒ L = V (σA)
H σA K
Then
V = −4
I d 10 −11
or tt = = ⇒ t t = 1.05 x10 s
(5)(1.36)b50 x10 g
6
vd 9.5 x10
−6

L= GaAs, v d = 7 x10 cm / s
6

−3
10 x10 Then
or −4
−2 d 10 −11
L = 3.4 x10 cm tt = = 6
s ⇒ t t = 1.43x10
(b) vd 7 x10
_______________________________________
Silicon, μ n = 1350 cm / V − s
2

Now 4.7
b
σ = 1.6 x10 g(1350)b10 g = 0.216 (Ω − cm)
−19 15 −1
For an intrinsic semiconductor,
Then b
σ i = eni μ n + μ p g
(5)(0.216)b50 x10 g −6
(a)
L= −3
For N d = N a = 10 cm ,
14
−3
10 x10
μ n = 1350 cm / V − s , μ p = 480 cm / V − s
2 2
or
−3
L = 5.4 x10 cm Then
_______________________________________ b
σ i = 1.6 x10
−19
gb15. x10 g(1350 + 480)
10

4.5 or
(a) v d = μ n x ε σ i = 4.39 x10 (Ω − cm)
−6 −1

Now (b)

ε x = V = 2 = 2.667 V / cm
−3
For N d = N a = 10 cm ,
18

d 0.75 μ n ≈ 200 cm / V − s , μ p ≈ 110 cm / V − s

2 2

so
Then
b gb15. x10 g(200 + 110)
3
7 x10
μn = = 2625 cm / V − s σ i = 1.6 x10
−19
2 10

2.667
(b) or
σ i = 7.44 x10 (Ω − cm)
−7 −1
v d = (950)(2.667) = 2.53 x10 cm / s
3

_______________________________________ _______________________________________

4.6 4.8
(a) Silicon: For ε = 1 kV / cm , from Figure 4.7, (a) p-type silicon
σ ≅ eμ p N a
v d ≅ 1.2 x10 cm / s
6

45
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

and or
0.25 = 1.6 x10 b −19
gμ N p a
ni (500 K ) = 2.27 x10 cm
13 −3

or Then
μ p N a = 156
. x10
18
b
σ i = 1.6 x10
−19
gb2.27 x10 g(1000 + 600) 13

For μ p = 480 cm / V − s , so
2

σ i (500 K ) = 5.81x10 (Ω − cm)

−3 −1
Then
N a = 3.25 x10 cm / V − s
15 2 _______________________________________
From Figure 4.3, mobility value is valid. 4.10
(b)
n-type GaAs, (a) (i) Silicon: σ i = eni μ n + μ p b g
ρ = 2 ⇒ σ = 0.5 (Ω − cm)
−1
b
σ i = 1.6 x10
−19
gb15. x10 g(1350 + 480) 10

We have or
σ = eμ n N d σ i = 4.39 x10 (Ω − cm)
−6 −1

and
0.5 = 1.6 x10b −19
gμ N n d
(ii)
b
Ge:
σ i = 1.6 x10
−19
gb2.4 x10 g(3900 + 1900) 13

or
or
μ n N d = 3125
18
. x10
σ i = 2.23x10 (Ω − cm)
−2 −1

For μ n = 8500 cm / V − s
2

(iii) GaAs:
Then
N d = 3.68 x10 cm
14 −3 b
σ i = 1.6 x10
−19
gb18. x10 g(8500 + 400) 6

or
From Figure 4.3, mobility value is valid.
σ i = 2.56 x10 (Ω − cm)
−9 −1
_______________________________________
L
4.9 (b) R =
σ i = eni μ n + μ p b g σA
200 x10
−4
Then
10 = 1.6 x10
−6
b −19
g(1000 + 600)n i
(i) R =
b4.39 x10 gb85x10 g ⇒
−6 −8

R = 5.36 x10 Ω
9
or
ni (300 K ) = 3.91x10 cm
9 −3
−4
200 x10
Now
F − E IJ
(ii) R =
b2.23x10 gb85x10 g ⇒
−2 −8

n = N N expG
H kT K
2 g

R = 1.06 x10 Ω
6
i C V

−4
or 200 x10
F N N IJ = (0.0259) lnLM b10 g OP
E = kT lnG
19 2 (iii) R =
b2.56x10 gb85x10 g ⇒
−9 −8

H n K MNb3.91x10 g PQ
C V
g 2 2
R = 9.19 x10 Ω
9 12
i

or _______________________________________
E g = 1122
. eV
4.11
Now
L −1122
n (500 K ) = b10 g exp M
. OP 2 (a) ρ = 5 =
1

N(0.0259)a500 300f Q eμ n N d
2 19
i

Assume μ n = 1350 cm / V − s
2

= 515
26
. x10 Then

46
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

vd = 2.4 x10 cm / s
4
1
Nd =
b1.6x10 g(1350)(5)
−19
⇒
Then

N d = 9.26 x10 cm
14 −3 1 * 2 1
E = mn vd = (1.08) 9.11x10
2 2
−31
2.4 x10
2
b gb g 2

(b)
or
T = 200 K → T = −75C −26 −7
T = 400 K → T = 125C E = 2.83x10 J = 1.77 x10 eV
From Figure 4.2, (b)
T = −75C , N d = 10 cm ⇒
15 −3
vd = (1200) 2 x10 b 3
g = 2.4 x10 cm / s 6

μ n ≈ 2500 cm / V − s Then
2

T = 125C , N d = 10 cm ⇒
15 −3
E=
1
2
b
(1.08) 9.11x10 −31 2.4 x104 gb g 2

μ n ≈ 700 cm / V − s
2
or
−3
Assuming nO = N d = 9.26 x10 cm over the −22 −3
14
E = 2.83 x10 J = 1.77 x10 eV
temperature range, _______________________________________
For T = 200 K ,
1 4.14
ρ=
b g
1.6 x10 (2500) 9.26 x10
−19 14
⇒
b g FG − E IJ
(a) ni = N C N V exp
H kT K
2 g

ρ = 2.7 Ω − cm
For T = 400 K ,
= b2 x10 gb1x10 g exp
F −110. I
H 0.0259 K
19 19

1
ρ=
b1.6x10 g(700)b9.26x10 g ⇒
−19 14
= 7.18 x10 ⇒ ni = 8.47 x10 cm
19 9 −3

ρ = 9.64 Ω − cm For N d = 10 cm >> ni ⇒ nO = 10 cm

14 −3 14 −3

_______________________________________ Then
J = σε = eμ n nO ε
b g(1000)b10 g(100)
4.12
1350 ⋅ ε
−19
= 1.6 x10
14

vd =
LM1350 ⋅ ε OP 2 or
1+
N 18. x10 Q J = 1.60 A / cm
2
7

Now (b)
ε (V / cm) vd (cm / s)
A 5% increase is due to a 5% increase in electron
concentration. So
0 0
F N I +n Nd
2

nO = 1.05 x10 =
H2K +
4 14 d 2
10 1.35x10 i
2 5 2
10 1.35x10
We can write
b1.05x10 − 5x10 g = b5x10 g + n
3 6
10 1.346 x10 14 13 2 13 2 2
4 7 i
10 1.08 x10
5 7 so
10 1.78 x10
ni = 5.25x10
2 26
6 7
10 180
. x10

= b2 x10 gb1x10 g
F T I expFG − E IJ 3

H 300K H kT K
19 19 g
_______________________________________

4.13 which yields

(a) vd = μ n ε = (1200)(20) F T I expF −110. I 3

H 300K H kT K
−12
2.625x10 =
or

47
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

By trial and error, we find kT1 = 0.0259

T = 456 K
F 330I = 0.02849
_______________________________________ kT2 = (0.0259)
H 300K
4.15 1 1
2
ni = 19.305 , = 17.550
(a) σ = eμ n nO + eμ p pO and nO = 2 kT1 2 kT2
pO Then
Then E g (19.305 − 17.550) = ln(10)
eμ n ni
2
or
σ= + eμ p pO
pO E g = 1.312 eV
To find the minimum conductivity, _______________________________________
dσ ( −1)eμ n ni 2

=0= 2
+ eμ p ⇒ 4.17
dpO pO 1 1 1 1
which yields = + +
μ μ1 μ2 μ3
Fμ I
=nG J
1/ 2

Hμ K
pO n
(Answer to part (b)) 1 1 1
i = + +
p 2000 1500 500
Substituting into the conductivity expression = 0.00050 + 0.000667 + 0.0020
or
eμ n ni
b g
2
1/ 2
σ = σ min = + eμ p ni μ n μ p μ = 316 cm / V − s
b g
2
1/ 2
ni μ n μ p
_______________________________________
which simplifies to
4.18
σ min = 2eni μ n μ p
FTI −3 / 2
F 300I +3 / 2

The intrinsic conductivity is defined as μn = (1300)

H 300K = (1300)
HTK
b
σ i = eni μ n + μ p ⇒ eni = g σi
μn + μ p
(a)
At T = 200 K , μ n = (1300)(1837
. )⇒
The minimum conductivity can then be written
μ n = 2388 cm / V − s
2

as
(b)
2σ i μnμ p
σ min = At T = 400 K , μ n = (1300)(0.65) ⇒
μn + μ p μ n = 844 cm / V − s
2

_______________________________________ _______________________________________
4.16 4.19
1 1 1 1 1 1
σ = eμ ni = = + = + = 0.006
ρ μ μ 1 μ 2 250 500
Now
FG − E IJ Then
μ = 167 cm / V − s
2

H 2kT K
g
exp
1ρ 1 50 5 _______________________________________
= = = 0.10 =
F − E IJ
1 1

expG
1ρ 15 50
H 2kT K
2 g
4.20
2
FG − E IJ
ni = N c N v exp
H kT K
2 g
or
L F 1 − 1 IJ OP
0.10 = exp M − E G
N H 2kT 2kT K Q g
1 2
and

48
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

b
σ i = eni μ n + μ p g 4.22
dn FG 5x10 − n(0)IJ
14
Now
T(K) b g
ni cm
−3
σ i (Ω − cm)
−1
J n = eDn
dx
= eDn
H 0.01 − 0 K
b g(25)FGH 5x100.010− n(0)IJK
14
−11 −19
0.19 = 1.6 x10
4
200 7.68 x10 4.13 x10
9 −6
300 6.95x10 2.03x10
400 2.28 x10
12
4.34 x10
−4 Then
(0.19)(0.010)
− n(0)
13 −2

b1.6x10 g(25) = 5x10

14
500 8.54 x10 116
. x10
−19

_______________________________________ which yields

n(0) = 0.25x10 cm
14 −3
4.21
(a) _______________________________________
1350
μn = and σ = eμ n N d 4.23
Nd dp
1+ 16 J p = − eD p
5 x10 dx

g(12)LMN100 − 50− xp10(50) OPQ

Now
b g b g b
15

σ (Ω − cm)
−19
μ n cm / V − s 0.270 = − 1.6 x10
−3 2 −1
N d cm −4

or
a f
15
10 1337 0.214
p 50 μm = 2.97 x10 cm
14 −3
16
10 1232 1.97
17
_______________________________________
10 779 12.5
18
10 295 47.2 4.24
dn Δn
J = eDn = eDn
(b) For μ n = 1350 cm / V − s
2
dx Δx
N d cm b g −3
σ (Ω − cm)
−1

b
= 1.6 x10
−19
g(25)FGH 100 −−0.1010 IJK
16 15

15
10 0.216
10
16
2.16 or
J = 0.36 A / cm
2
17
10 21.6
For A = 0.05 cm
18 2
10 216
I = AJ = (0.05)(0.36) ⇒ I = 18 mA
(c)
vd = μ n ε cm / s
_______________________________________
Now
b g
4.25
vd (cm / s) vd (cm / s)
−3
N d cm dp
I p = − eDp A
(from part a) (from part b) dx
10
15
1.34 x10
4
1.35x10
4

b
= − 1.6 x10
−19
g (10)(0.075)
LM10 − 2 x10 OP
15 14

N 0 − 0.10 Q
16 4 4
10 1.23x10 1.35x10
17 4 4
10 0.779 x10 1.35x10
18 4 4
or
10 0.295x10 1.35x10 I p = 0.96 mA
_______________________________________ _______________________________________

49
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

4.26 4.29
dn Δn dp d LM10 expF − x I OP
J n = eDn = eDn J p = − eDp = − eD p
dp N H 22.5K Q
15

dx Δx dx
so
Distance x is in μm , so 22.5 → 22.5 x10 cm .
−4

b gD FGH 100 −−4 x610x10 IJK

17 16
−19 Then
−400 = 1.6 x10
b gFH I F I
n −4
−1 −x
J p = − eDp 10
K H K
15
−4
exp
or 22.5x10 22.5
+b1.6 x10 g(48)b10 g
−400 = Dn ( −16) −19
F −x I 15

Then
Dn = 25 cm / s
2
=
22.5 x10
exp
H 22.5K
−4

or
_______________________________________
F − x I A / cm
J = 3.41 exp
H 22.5K
2
p
4.27
dp _______________________________________
J = − eDp
dx
LM10 F1 − x I OP = −eD FG −10 IJ
d
16
4.30
= − eD
dx N H LK Q H L K J n = eμ n nε + eDn
dn
16
p p

dx
b1.6x10 g(10)b10 g
−19 16
or

or
=
10 x10
−4
−40 = 1.6 x10 b g(960)LMN10 expFH −18x IK OPQε
−19 16

J = 16 A / cm = constant at all three points

2

_______________________________________
b
+ 1.6 x10
−19
g(25)b10 gFH 18x−101 IK expFH −18x IK
16
−4

Then
4.28
LM F − x I OPε − 22.2 expF − x I
J p ( x = 0) = − eD p
dp
dx
x =0 N H 18 K Q
−40 = 1536
. exp
H 18 K
Then
10
15
b1.6x10 g(10)b10 g
−19 15
F − x I − 40
= − eD p
b− L g =
5 x10
−4

ε=
22.2 exp
H 18 K ⇒
p

F −xI
or
J p ( x = 0) = 3.2 A / cm
2
1536
. exp
H 18 K
Now
ε = 14.5 − 26 expFH + x IK
dn 18
J n ( x = 0) = eDn x =0
dx _______________________________________

FG 5x10 IJ = b1.6x10 g(25)b5x10 g

14 −19 14
4.31
= eDn
H L K n
10
−3
J T = J n , drf + J p , dif
or dp
(a) J p , dif = − eDp
J n ( x = 0) = 2 A / cm
2 and
dx
Then
F I where L = 12 μm
−x
J = J p ( x = 0) + J n ( x = 0) = 3.2 + 2 p( x ) = 10 exp
H LK
15

or so
J = 5.2 A / cm
2

= − eD b10 g
F −1I expF − x I
H LK H L K
15
_______________________________________ J p , dif p

50
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

or
b1.6 x10 g b g expF − x I
−19
(12) 1015 100 = 154b
. x10
−14
gLNM A + B expFH −dx IK OQP
J p , dif =
12 x10
−4
H 12 K b3.31x10 g B expF − x I −17

or
F − x I A / cm
−
d HdK
= +1.6 exp
H LK
2
J p , dif This equation is valid for all x , so
−14
100 = 154
. x10 A
(b) or
J n ,drf = J T − J p ,dif A = 6.5x10
15

or Also
F −xI F −xI
H LK HdK
−14
J n ,drf = 4.8 − 1.6 exp 154
. x10 B exp

(c) b3.31x10 g B expF − x I = 0

−17

J n ,drf = eμ n nOε −
d HdK
Then which yields
b1.6x10 g(1000)b10 gε
−19 16
d = 2.15 x10 cm
−3

F −xI At x = 0 , eμ n n(0)ε = 50
= 4.8 − 1.6 exp
H LK so that
which yields b
50 = 1.6 x10
−19
g(8000)(12)( A + B)
ε = LM3 − 1 × expFH −x I OP
KQ
N which yields B = −3.24 x10
15
V / cm
L Then
_______________________________________ F −xI
n( x ) = 6.5 x10 − 3.24 x10 exp
HdK
15 15 −3
cm
4.32
dn( x ) (b)
(a) J = eμ n n( x )ε + eDn
At x = 0, n(0) = 6.5x10 − 3.24 x10
15 15
dx
Or
Now μ n = 8000 cm / V − s so that
2

n(0) = 3.26 x10 cm

15 −3

Dn = (0.0259)(8000) = 207 cm / s
2

At x = 50 μm ,
F −50I
Then
b
100 = 1.6 x10
−19
g(8000)(12)n( x) n(50) = 6.5 x10 − 3.24 x10 exp
15 15

H 215. K
dn( x )
+b1.6 x10 g(207)
−19
or
n(50) = 6.18 x10 cm
dx 15 −3

which yields
dn( x ) (c)
. x10 n( x ) + 3.31x10 At x = 50 μm , J drt = eμ n n(50)ε
−14 −17
100 = 154

Solution is of the form

dx
b
= 1.6 x10
−19
g(8000)b6.18x10 g(12) 15

−x F I or
n( x ) = A + B exp
d H K J drf ( x = 50) = 94.9 A / cm
2

so that
dn( x ) − B −x F I Then
J dif ( x = 50) = 100 − 94.9 ⇒
dx
=
d
exp
d H K J drf ( x = 50) = 51
. A / cm
2

Substituting into the differential equation, we

have _______________________________________

51
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

4.33 or
F E F − E Fi I F x − 1I ε + 41.44
n = ni exp
kT H K 80 = 1.6
HL K
(a) E F − E Fi = ax + b , b = 0.4 Solving for the electric field, we find
0.15 = a 10 b g + 0.4 so that a = −2.5x10
−3 2
ε = x24.1
F I
Then
E F − E Fi = 0.4 − 2.5 x10 x
2 L
−1
H K
So (b)

F 0.4 − 2.5x10 x IJ
n = n expG
2 For J n = −20 A / cm
2

H kT K F x − 1I ε + 41.44
HL K
i
20 = 1.6
(b)
Then
dn
J n = eDn
ε= 13.4
dx
F −2.5x10 IJ expFG 0.4 − 2.5x10 x IJ F1 − x I
= eD n G
2 2
H LK
H kT K H kT K
n i
_______________________________________
Assume T = 300 K , kT = 0.0259 eV , and
−3
4.35
ni = 15
10
. x10 cm
(a) J = eμ n nε + eDn
dn
Then

Jn =
b
− 1.6 x10
−19
g(25)b15. x10 gb2.5x10 g10 2

Let n = N d = N do exp
dx
a f
−α x , J = 0
(0.0259) Then
FG 0.4 − 2.5x10 x IJ 2
a f
0 = μ n N do exp −α x ε + Dn N do ( −α ) exp −α x a f
H 0.0259 K
× exp
or
or ε D
0 = + n ( −α )
F 0.4 − 2.5x10 x IJ
expG
2 μn
H 0.0259 K
−4
J n = −5.79 x10
Dn kT
Since =
μn e
(i) At x = 0 , J n = −2.95x10 A / cm
3 2

So

ε = α FH kT IK
(ii) At x = 5 μm , J n = −23.7 A / cm
2

_______________________________________
e
4.34 (b)

(a) J n = eμ n nε + eDn
dn
V = − z εdx = −α
1/ α
F kT I z dx 1/ α

dx H eK
g(1000)b10 gFH1 − Lx IK ε
0 0

b
−80 = 1.6 x10
−19 16
LM F kT I F 1 I OP so that V = −F kT I
N H e KH α KQ
= α
H eK
+b1.6 x10 g(25.9)G
F −10 IJ 16
_______________________________________
H LK
−19

4.36
−4 −3
where L = 10 x10 = 10 cm From Example 4.5
We find
εx =
b g = (0.0259)b10 g
(0.0259) 1019 3

−80 = 1.6ε − 1.6

x
ε − 41.44 F I b10 − 10 xg b1 − 10 xg
H K
16 19 3

−3
10

52
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

zε
10 −4
b g z b1 − 10 xg
10 −4
dx b
− 1.6 x10 g(155.4)b5x10 g expF − x I
−19 16

V =− = −(0.0259) 10 J dif =
b0.1x10 g H LK
3
x dx 3 −4
0 0

= −(0.0259) 10 b gFH 10−1 IK ln 1 − 10 x

3 3 10 −4 or
F − x I A / cm
H LK
3 0
= −1.24 x10 exp
5 2
J dif
= (0.0259) ln(1 − 0.1) − ln(1)
or (b)
V = −2.73 mV 0 = J drf + J dif
_______________________________________ Now
J drf = eμ n nε

g(6000)b5x10 gLMNexpFH −Lx IK OPQε

4.37
From Equation (4.42)
b
ε x = −FH kT IK FG
IJ ⋅ dN ( x)
−19
= 1.6 x10
16

1
e H N ( x)K F −xI
d

= 48ε exp
H LK
dx d

Now
F 1 IJ ⋅ dN ( x)
1000 = −(0.0259)G
We have
H N ( x)K dx
d
J drf = − J dif
d
so
or
dN d ( x ) 48ε exp
F − x I = 1.24 x10 expF − x I
H LK H LK
5

+ 3.86 x10 N d ( x ) = 0
4

dx
Solution is of the form which yields
N d ( x ) = A exp −α x a f ε = 2.58 x10
V / cm
3

_______________________________________
and
dN d ( x )
dx
= − Aα exp −α x a f 4.39
From Figure 4.2a, we find the mobility values.
Substituting into the differential equation We have
a f
− Aα exp −α x + 3.86 x10 A exp −α x = 0
4
a f kT F I
which yields
D=μ
e H K
α = 3.86 x10 cm
4 −1
Now
At x = 0 , the actual value of N d (0) is arbitrary.
T (° C ) kT e (V ) μ n cm / V − s
2
b g
_______________________________________ -50 0.01925 1100
0 0.02357 890
4.38 50 0.02789 730
(a) J n = J drf + J dif = 0 100 0.03220 590
150 0.03652 495
dn dN d ( x ) 200 0.04084 410
J dif = eDn = eDn
dx dx
eDn F I −x
Then
b g
=
(− L)
⋅ N do exp
H LK T (° C ) Dn cm / s
2
D = (0.0259)μ n

We have -50 21.2 28.5

F kT I = (6000)(0.0259) = 155.4 cm / s 0 21.0 23.1

Dn = μ n
H eK 50 20.4 18.9
2

100 19.0 15.3

Then 150 18.1 12.8
200 16.7 10.6
_______________________________________

53
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

4.40 4.44
F I = (925)(0.0259)
kT nO
(a) D = μ
H eK (a) RnO =
τ nO
so and

(b)
D = 23.96 cm / s
2

nO =
ni
2

=
b10 g 10 2

= 10 cm
4 −3
16
pO 10
For D = 28.3 cm / s
2

Then
28.3 4
μ= ⇒ μ = 1093 cm / V − s 10
2
−3 −1
RnO = ⇒ RnO = 5 x10 cm s
10
0.0259 2 x10
−7

_______________________________________ (b)
δn
12
4.41 10 −3 −1
Rn = = or Rn = 5 x10 cm s
18

τ nO
−7
2 x10
so
ΔRn = Rn − RnO = 5 x10 − 5 x10 ⇒
18 10
_______________________________________
−3 −1
ΔRn ≈ 5 x10 cm s
18

4.42
_______________________________________

_______________________________________ 4.45
(a) Recombination rates are equal
4.43 nO p
= O
τ nO τ pO
_______________________________________
−3
nO = N d = 10 cm
16

4.42
pO =
ni
2

=
b15. x10 g 10 2

= 2.25 x10 cm
4 −3
16
nO 10
So
16 4
10 2.25x10
=
τ nO
−6
20 x10
or
τ nO = 8.89 x10 s
+6

(b) Generation Rate = Recombination Rate

So
4
_______________________________________ 2.25x10 −3 −1
G= ⇒ G = 1125
9
−6
. x10 cm s
20 x10
4.43
n-type semiconductor, low-injection so that (c)
−3 −1
R = G = 1125
9
. x10 cm s
δp
13
5x10
R′ = = _______________________________________
τ pO
−6
10
or 4.46
R ′ = 5 x10 cm s
19 −3 −1

(a) E = hν =
hc
=
b6.625x10 gb3x10 g −34 8

λ
_______________________________________ −10
6300 x10
or

54
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

E = 315
. x10
−19
J This is the energy of 1 (c)
Ix L
photon. μn =
Now enVxWd
1 W = 1 J / s ⇒ 317
. x10
18
photons/s
b250x10 gb10 g −6 −3

Volume = (1)(0.1) = 0.1 cm

Then
+3 =
b1.6x10 −19
gb5x10 g(0.1)b2 x10 gb5x10 g
21 −4 −5

18
or
317
. x10
μ n = 0.3125 m / V − s = 3125 cm / V − s
2 2
g= ⇒
0.1 _______________________________________
g = 317
. x10 e − h pairs / cm − s
19 3

4.49
(b)
δn = δp = gτ = 317
. x10 b 19
gb10x10 g −6 (a) VH = positive ⇒ p-type
(b)
or I B I B
δn = δp = 3.17 x10 cm
14 −3 VH = x z ⇒ p = x z
epd eVH d
_______________________________________
b0.75x10 gb10 g −3 −1

4.47
We have L = 10 cm = 10 m ,
−1 −3
=
b1.6x10 gb5.8x10 gb10 g
−19 −3 −5

or
−2 −4 −3 −5
W = 10 cm = 10 m , d = 10 cm = 10 m p = 8.08 x10 m = 8.08 x10 cm
21 −3 15 −3

(a)
(c)
We have
Ix L
−3
p = 10 cm = 10 m , I x = 1 mA = 10
16 22 −3 −3
A μp =
Then epVxWd

I x Bz b10 gb3.5x10 g −3 −2
b0.75x10 gb10 g −3 −3

VH =
epd
=
b1.6x10 gb10 gb10 g −19 22 −5
=
b1.6x10 −19
gb8.08x10 g(15)b10 gb10 g 21 −4 −5

or or
VH = 2.19 mV μ p = 3.87 x10 m / V − s = 387 cm / V − s
−2 2 2

(b) _______________________________________
−3

ε =
VH
=
2.19 x10
4.50
b gb5x10 g
H −2
W 10 −3 −2
(a) VH = E HW = − 16.5 x10
or
ε
= 0.219 V / cm
H
or
_______________________________________ VH = −0.825 mV
(b)
4.48 VH = negative ⇒ n-type
− I x Bz b
gb5x10 g
− 250 x10
−6 −2
(c)
(a) VH =
ned
=
b5x10 gb1.6x10 gb5x10 g
21 −19 −5

n=
− I x Bz
or edVH
VH = −0.3125 mV b
− 0.5 x10 gb6.5x10 g
−3 −2

(b)
−0.3125x10
−3
=
b1.6x10 −19
gb5x10 gb−0.825x10 g−5 −3

ε H
=
VH
= −2
⇒ or
W 2 x10 n = 4.92 x10 m = 4.92 x10 cm
21 −3 15 −3

ε H
= −156
. x10 V / cm
−2

55
An Introduction to Semiconductor Devices Chapter 4
Solutions Manual Problem Solutions
______________________________________________________________________________________

(d)
Ix L
μn =
enVxWd
b0.5x10 gb0.5x10 g
−3 −2

=
b1.6x10 −19
gb4.92 x10 g(1.25)b5x10 gb5x10 g
21 −4 −5

or
μ n = 0.102 m / V − s = 1020 cm / V − s
2 2

_______________________________________

4.51
(a) VH = negative ⇒ n-type
− I x Bz −3
(b) n = ⇒ n = 8.68 x10 cm
14

edVH
Ix L
(c) μ n = ⇒ μ n = 8182 cm / V − s
2

enVxWd
(d)

σ=
1
ρ
b
= eμ n n = 1.6 x10
−19
g(8182)(8.68x10 ) 14

or
ρ = 0.88 Ω − cm

56