APPLICATION NOTE: AN002 GaN Power Transistors

Fundamentals of Gallium Nitride

Power Transistors
EFFICIENT POWER CONVERSION

Stephen L. Colino and Robert A. Beach, Ph.D.

The basic requirements for power semiconductors are efficiency, reliability, just below the AlGaN that is highly conductive.
controllability, and cost effectiveness. High frequency capability adds further This abundance of electrons is known as a two
value in size and transient response in regulators, and fidelity in class D amplifiers. dimensional electron gas (2DEG).
Without efficiency and reliability, a new device structure would have no chance of Further processing forms a depletion region under
economic viability. There have been many new structures and materials considered; the gate. To enhance the transistor, a positive
some have been economic successes, others have seen limited or niche acceptance. voltage is applied to the gate in the same manner
Breakthroughs by EPC in processing gallium nitride have produced enhancement as turning on an n-channel, enhancement mode
power MOSFET. A cross section of this structure
mode devices with high conductivity and hyper fast switching, with a silicon-like cost
is depicted in figure 1. This structure is repeated
structure and fundamental operating mechanism. many times to form a power device. The end result
is a fundamentally simple, elegant, cost effective
solution for power switching. This device behaves
Operation similarly to silicon MOSFETs with some exceptions
EPC’s enhancement mode gallium nitride (eGaN®) Structure that will be explained in the following sections.
transistors behave very similarly to silicon power A device’s cost effectiveness starts with leveraging
existing production infrastructure. EPC’s To obtain a higher voltage device, the distance
MOSFETs. A positive bias on the gate relative to
manufacturing utilizes standard CMOS tools to between the Drain and Gate is increased. As the
the source causes a field effect which attracts
fabricate their devices. EPC’s process begins with resistivity of GaN 2DEG is very low, the impact on
electrons that complete a bidirectional channel
silicon wafers. Using an MOCVD reactor, a thin resistance by increasing blocking voltage capability
between the drain and the source. A key difference
layer of aluminum nitride (AlN) is grown on the is much lower when compared with silicon.
between gallium nitride (GaN) and silicon is that
silicon to transition the crystal from silicon to GaN. Figure 2 shows the theoretical resistance times die
the electrons in the 2DEG are not associated to
This is a seed layer used to grow a thick layer of area limits of GaN versus silicon versus voltage.
any particular atom, as opposed to being loosely
highly resistive GaN on the silicon wafer. GaN is EPC’s fifth generation of devices is shown as
trapped in a lattice, they have an equal probability
a wide bandgap material that can support high well. Please note that after 30 years of MOSFET
of being anywhere in the plane. The result is a
voltage at small distances. The GaN layer provides development, silicon has approached its theoretical
channel of resistance much lower than that of
a foundation on which to build the GaN transistor. limits. Progress in silicon has slowed to the point
silicon. When the bias is removed from the gate,
An aluminum gallium nitride (AlGaN) layer is where small gains have significant development
the electrons under it are dispersed into the GaN,
deposited resulting in a piezoelectric polarization, cost. GaN is young in its life cycle, and will see
recreating the depletion region, and once again,
with an abundance of electrons being generated significant improvement in the years to come.
giving it the capability to block voltage.

100 V 200 V
10 1
Si Limit

100
Specific RDS(on) (Ωmm2)

SiC Limit
Electron generating layer
Dielectric Aluminum nitride 10 -1
EPC2215
isolation layer EPC2218 GaN Limit
10-2
S G D
10-3
GaN
10-4
Si 101 102 103 104
Breakdown Voltage (V)
Figure 1. EPCs’ GaN Power Transistor Structure Figure 2. Theoretical resistance times die area limits GaN vs. silicon vs. voltage

EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1

APPLICATION NOTE: AN002 GaN Power Transistors

Gate Threshold Capacitance Series Gate Resistance and Leakage

The threshold of gallium nitride transistors is lower In addition to the low RDS(on), the lateral structure Series gate resistance (RG) limits how quickly the
than that of silicon MOSFETs. This is made possible of the GaN transistor makes it a very low charge capacitance of a field effect transistor can be
by the almost flat relationship between threshold device as well. It has the capability of switching charged or discharged. Silicon MOSFETs are limited
and temperature along with the very low CGD, hundreds of volts in nanoseconds, giving it multiple to using polysilicon or silicide where GaN transistors
as described later. Figure 3 shows the transfer megahertz capability. This capability will lead to use metal gates. The metal gates enable GaN to
characteristics curve for the EPC2218, 100 V, 3.2 mΩ smaller power converters, and higher fidelity class have gate resistances of a couple tenths of an
(max) transistor. Please note the negative relationship D amplifiers. Most important in switching is CGD. ohm. This low gate resistance also helps with dV/dt
between current and temperature. This provides for With the lateral structure, CGD comes only from immunity.
excellent sharing all regions of operation, which will a small corner of the gate. An extremely low CGD For isolating the gate, oxide growth is not an option
be explained later. Even with significant conduction leads to the very rapid voltage switching capability with GaN. For this reason, the gate leakage current
current above 1.7 V, The Ratio of QGD to QGS(th) is 0.8 of GaN transistors. of GaN transistors is higher than that of silicon
indicating that the device will be held off regardless CGS consists of the junction from the gate to the MOSFETs. Designers should expect gate leakage
of dv/dt. on the order of 1 mA. As these are low gate drive
channel, and the capacitance of the dielectric
between the gate and the field plate. CGD is very voltage devices, losses associated with gate leakage
200 25˚C small when compared with CGS, giving GaN are low.
125˚C transistors excellent dv/dt immunity. CGS still small
when compared with silicon MOSFETs giving them Figure of Merit
ID – Drain Current (A)

150 VDS = 3 V
very short delay times, and excellent controllability Total gate charge (QG) is the integral of CGS plus
in low duty cycle applications. A 48 V to 1 V buck CGD over voltage. A common figure of merit that
100
regulator has been demonstrated at 1 MHz using takes both on state and switching performance
100 V GaN transistors from EPC. CDS is also small, into account is (RDS(on) x QG). Figure of merit for GaN
50
being limited to the capacitance across the transistors versus best in class silicon MOSFETs are
dielectric from the field plate to the drain and presented in figure 7 for 100 V devices and figure 8
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 drain to substrate. Physical capacitance locations for 200 V devices.
VGS – Gate-to-Source Voltage (V) are shown in figure 5. Capacitance versus voltage
curves for GaN again look similar to those for 400
Figure 3. Transfer characteristics curve silicon except that for with a similar resistance, its
capacitance is significantly lower and flattens out FOM =RDS(on) x QG (100 V)
Resistance much sooner. Capacitance curves for the EPC2218 300
RDS(on) versus VGS curves are similar to MOSFETs. are shown in figure 6.
EPC fifth generation GaN transistors are designed
CGD
to operate with 5 V drive. Figure 4 shows the set of CGS CDS 200
curves for the EPC2218. The curve shows that RDS(on)
flattens as the absolute maximum gate voltage is S G
approached. As there is negligible gate drive loss D
penalty, GaN transistors should be driven with 5 V. GaN 100

The temperature coefficient of RDS(on) of the GaN

transistor is also similar to the silicon MOSFET as it
0
is positive with about the same magnitude or 1.52x Figure 5. Physical capacitance locations EPC2218 BRAND A BRAND B BRAND C
of the 25°C point at 100°C point for the EPC2218.
Figure 7.
1600
3000
RDS(on) – Drain-to-Source Resistance (mΩ)

ID = 12 A 1400
8
ID = 25 A 1200 FOM =RDS(on) x QG (200 V)
ID = 37 A
Capacitance (pF)

COSS = CGD + CSD

6 1000
ID = 50 A CISS = CGD + CGS
800 CRSS = CGD 2000
4 600

400
2
200
1000
0
0 0 25 50 75 100
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)

Figure 4: RDS(on) vs. VGS at various currents Figure 6. Capacitance curves, EPC2218
0
EPC2215 BRAND A BRAND B BRAND C

Figure 8.

EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 2

APPLICATION NOTE: AN002 GaN Power Transistors

Body Diode Packaging Applications and Value

The last part of the performance picture is that of the EPC’s GaN transistors use wafer level packaging using EPC brings enhancement mode to GaN. This allows
so-called “body diode”. As seen from figure 1, EPC’s either ball or land grid arrays. The terminal side of the immediate realization of the disruptive gains in
GaN transistor structure is a purely lateral device, EPC2218, a 3.5 mm x 1.95 mm, 3.2 mΩ (max.) 100 V efficient high frequency and low duty cycle power
absent of the parasitic bipolar transistor common GaN transistor is shown in figure 10. With all terminals conversion. Other “exotic” technologies are either
to silicon based MOSFETs. As such, reverse bias or being on the same side, inductance, particularly cost prohibitive or use depletion mode. Depletion
“diode” operation has a different mechanism but inductance common to gate drive and power loops, mode devices lose control when there is no power,
similar function. With zero bias gate to source, there are small compared with silicon MOSFETs that require and require new development in control ICs.
is an absence of electrons under the gate region. wire bonds or clips to bring all terminals to the PCB. GaN transistors will bring a leap in Class D audio
As the drain voltage is decreased, a positive bias Low power loop inductance reduces overshoot technology by enabling efficient switching at
on the gate is created relative to the drift region, and ringing, reducing both power dissipation and frequencies above the AM band. Fidelity will
injecting electrons under the gate. Once the EMI. Low common source inductance reduces approach Class A and Class AB systems without all of
gate threshold is reached, there will be sufficient current commutation time. In addition, EPC’s GaN the size and weight limitations of linear amplifiers.
electrons under the gate to form a conductive Transistors have efficient cooling paths to both the They will allow high quality amplifiers to be built
channel. The benefit to this mechanism is that there top and bottom of the device. Using top side cooling into very tight spaces such as flat screen televisions,
are no minority carriers involved in conduction, allows for the highest current and power density computers and speakers.
and therefore no reverse recovery charge (QRR) or of these transistors. Mounting a heat spreader to
loss. While QRR is zero, output capacitance (COSS) threaded surface mount standoffs around the power In information processing and storage systems, the
has to be charged and discharged with every FETs controls FET to a heat spreader gap that is whole power architecture can be re-evaluated to take
switching cycle. For devices of similar RDS(on), GaN inexpensive to manufacture. advantage of the outstanding switching capabilities.
transistors have significantly lower COSS than silicon As output voltage increases for AC/DC converters,
For discrete devices, the source is connected to efficiency goes up. As bus voltage increases,
MOSFETs. As it takes threshold voltage to turn the substrate (either internally or externally), and transmission efficiency goes up. As frequency
on the GaN transistor in the reverse direction, the electrical insulation is needed between a high increases, size goes down. EPC GaN enables the last
forward voltage of the “diode” is higher than silicon side device and a ground referenced heat sink. stage which enables the first two while increasing
transistors. As with silicon MOSFETs, care should Junction isolation is used in monolithic half bridge AC/DC efficiency when used as synchronous
be taken to minimize diode conduction time. As configuration, keeping the substrate at the low side rectifiers. They also allow for intermediate stage
fundamental operation of GaN transistors is similar source potential. Electrical isolation is not needed converters to be removed for single step conversion,
to that of silicon MOSFETs, they can be represented when both the low side source and the heat sink are saving the size and cost of the intermediate stage
schematically the same way as shown in figure 9. at ground potential. converter.

D Conclusion
EPC gallium nitride transistors bring tremendous
G performance and size advantages over silicon.
These advantages can be applied to gain efficiency
advantages, size advantages, or a combination of
both, with application requirements and a cost
S
structure that are similar to silicon. To take full
Figure 9. advantage of GaN, power architects should rethink
Figure 10. their system. The future of GaN transistors is now.

EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 3