EECE 457-Unit 1-Logical Effort
EECE 457-Unit 1-Logical Effort
Slides based on the initial set from David Harris & Deming Chen
Unit
1
Logical Effort
Ref: Ch. 4 – CMOS VLSI DESIGN- A Circuits and Systems Perspective – 4th edition-Weste & Harris
Text book:
1. Weste & Harris, CMOS VLSI DESIGN- A Circuits and Systems
Perspective – 4th edition., Pearson- Hill, 2011.
References:
1. Basic VLSI Design by Douglas A. Pucknell and Kamran
Eshraghian; 3rd Edition.
➢ Use RC delay models to estimate delay * A unit nMOS transistor is defined to have
effective resistance R.
▪ C = total capacitance on output
* An nMOS transistor of k times unit width has
node resistance R/k because it delivers k times as
▪ Use effective resistance R much current.
▪ So that tpd = RC * A unit pMOS transistor has greater resistance,
generally in the range of 2R–3R, because of its
➢ Characterize transistors by finding lower mobility. R is typically on the order of 10
their effective R kΩ for a unit transistor.
Figure (a) shows the equivalent circuit for a fanout-of-1 inverter with negligible wire
capacitance. Figure (b) gives an equivalent circuit, showing the first inverter driving the
second inverter’s gate. Figure (c) illustrates this case with the switches removed. The
capacitors shorted between two constant supplies are also removed because they are not
charged or discharged. The total capacitance on the output Y is 6C.
Solution:
inverter: (1:2)
z =C ×(4/3)/(4/3)=C. Similarly,
y = z × (4/3)/(4/3) = z = C.
Hence we find that all three nand gates
should have the same input capacitance, C.
Using the network as in Figure, find the least delay achievable along the path from A to B
when the output capacitance is 8C.
Md Tawfiq Amin, PhD-MIST EECE 457: Logical Effort 32
Example:
Optimize the circuit in Figure to obtain the least delay along the path from A to B when the
electrical effort of the path is 4.5
y = 3z × (4/3)/4 = z = 1.5C