Abstract:

The purpose of this lab is to study the behavior of a silicon diode under forward bias. To
achieve this, we will conduct an experiment by setting up a circuit that includes a diode, a
resistor, and a DC power supply. We will gradually increase the voltage and record the
voltage across the diode (VD) and the resistor (VR). Afterward, we will calculate and
document the current (ID). We will then repeat the same experiment using Multisim
simulation software. Finally, we will plot the results of both experiments (ID vs. VD) on a
characteristic curve to analyze the diode’s performance.

Theory:
Diode Structure:
The structure of a semiconductor diode is created by the joining of n-type and p-type
materials, forming what is known as a pn junction.

Figure 1; pn junction diode structure

As shown in Figure 1, the pn junction consists of a p-type semiconductor material in contact
with an n-type semiconductor material. Various semiconductor materials, such as silicon,
germanium, and gallium arsenide, can be used to form pn junctions. However, silicon is the
primary focus due to its widespread use in microelectronics.
In practice, both the p and n regions are part of a single silicon crystal, with the pn junction
formed by creating differently doped regions (p and n) within a single silicon piece. Doping
is achieved by introducing additional atoms, known as impurities, which can be donor or
acceptor atoms. The terms "acceptor" and "donor" are associated with accepting and donating
electrons, respectively.
PN junction:
To illustrate the formation of a pn junction, two separate pieces of semiconductor—one n-
type and one p-type—can initially be considered, as shown in Figure 2 (a). By bringing these
two pieces together, a single semiconductor piece is created, resulting in the formation of a pn
junction, as depicted in Figure 2 (b).

Figure 2: a) separate pieces of p and n materials, b) pn junction

Forward/Reverse-Bias Characteristics:
When a negative voltage is applied to the pn junction, the diode is reverse-biased. In this
condition, free holes and electrons are pulled toward the ends of the crystal, away from the
junction. As a result, all available carriers are attracted away from the junction, causing an
extension of the depletion region, and no current flow occurs under these conditions. When a
positive voltage is applied, the diode is placed in forward bias, which results in a shrinking of
the depletion region. In this case, electrons in the p-type region are attracted to the positive
applied voltage, while holes in the n-type region are attracted to the negative applied voltage.
Diode Characteristics:
For diode characteristics, in the forward-bias condition, a cut-in voltage must be overcome
for conduction to begin. In silicon diodes, this voltage is about 0.6-0.7 V. Under reverse-bias
conditions, the current is limited to the reverse saturation current (IS). With higher values of
reverse voltage, junction breakdown occurs. Figure 3 shows the diode I-V characteristics.

Figure 3: Diode IV Characteristic

Apparatus:

SL# Apparatus Quantity

1 Diode 1
2 Resistance (1 k) 1
3 Project Board 1
4 DC Power Supply 1
5 Multimeter 1

Precautions:
The following special safety precautions should be taken into consideration when working
with diodes:
1. A diode should never be removed or inserted into a circuit while voltage is applied.
2. When testing a diode, it should be ensured that the test voltage does not exceed the diode’s:
- Maximum allowable voltage.
- When replacing a diode in a circuit, the correct direction should be ensured.

Procedure:
The following experimental procedures should be followed:
1. The actual value of the 1 kΩ resistor should be measured.
2. The circuit should be connected as shown in Figure 4.

Figure 4: Circuit diagram for determining diode

characteristics.
3. The DC power supply should be turned on with the voltage control knob set to 0 V.
4. The voltage control knob should be gradually rotated from 0 V to 10 V in increments of 0.1
V and 1 V, as outlined in Table 1.
5. The voltage across the two terminals of the supply voltage, diode, and resistor should be
measured for each case.
6. The measured data should be recorded in Table 1.
7. The power supply should then be turned off.
8. The drain current (Id) should be calculated, and the results should be entered into Table 1.
9. The VD - ID characteristic curve for the diode should be plotted.
10. The knee voltage, as well as the static and dynamic resistance of the diode, should be
determined.

Table 1 Data for the VD - Id Curve:

Source Voltage, Es (V) Diode Voltage, VD (V) Resistor Voltage, VR (V) Diode Current, Id (mA)
0 0.0104 0 0

0.1 0.19 0 0

0.2 0.285 0.001 0.001

0.3 0.358 0.005 0.005

0.4 0.436 0.036 0.036

0.5 0.477 0.093 0.093

0.6 0.499 0.152 0.152

0.7 0.521 0.245 0.245

0.8 0.537 0.334 0.334

0.9 0.547 0.411 0.411

1.0 0.557 0.499 0.499

2.0 0.610 1.449 1.449

3.0 0.636 2.427 2.427

4.0 0.652 3.406 3.406

5.0 0.665 4.375 4.375

6.0 0.674 5.356 5.356

7.0 0.683 6.358 6.358

8.0 0.689 7.363 7.363

9.0 0.695 8.352 8.352

10.0 0.7 9.342 9.342

11.0 0.705 10.348 10.348

12.0 0.709 11.346 11.346

Characteristics Curve (using data table-1):

Simulations:

Figure for 0V
Figure for 0.1V

Figure for 0.2V

Figure for 0.3V

Figure for 0.4V

Figure for 0.5V

Figure for 0.6V

Figure for 0.7V

Figure for 0.8V

Figure for 0.9V

Figure for 1V

Figure for 2V

Figure for 3V
 Figure for 5V

Figure for 6V

Figure for 7V
Figure for 8V

Figure for 9V

Figure for 10V

Figure for 11V

Figure for 12V

 Table 2 Data for the VD - Id Curve:
Source Voltage, Es (V) Diode Voltage, VD (V) Resistor Voltage, VR (V) Diode Current, Id (mA)

0 0 0 0

0.1 0.100 0 0

0.2 0.200 0 0

0.3 0.299 0 0

0.4 0.399 0 0

0.5 0.498 0.002 0.002

0.6 0.566 0.033 0.033

0.7 0.596 0.103 0.103

0.8 0.611 0.188 0.188

0.9 0.621 0.278 0.278

1.0 0.629 0.370 0.370

2.0 0.662 1.337 1.337

3.0 0.676 2.323 2.323

4.0 0.686 3.314 3.314

5.0 0.692 4.307 4.307

6.0 0.698 5.302 5.302

7.0 0.702 6.297 6.297

8.0 0.706 7.294 7.294

9.0 0.709 8.290 8.290

10.0 0.712 9.389 9.389

11.0 0.715 10.285 10.285

12.0 0.717 11.282 11.282

Characteristics Curve (using data table-2):

VD Vs ID Graph
12

10

6
ID

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

VD
Discussion & Conclusion:
In this experiment we observed diodes forward bias condition in different voltage . The
diode starts conducting once it reaches the cut in voltage of 0.7V for silicon and the current
increases with applied voltage which we can see from the characteristics curve VD VS Id.
References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th
Edition, 2007-2008.
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing,
3rd ed., ISBN: 0-03 051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John
Wiley & Sons Canada, Ltd., ISBN: 0471410160, 2002. [5] Resistor values:
https://www.eleccircuit.com/how-to-basic-use-resistor/, accessed on 20 September 2023.