tute (EM)-1
tute (EM)-1
theorem
1) Electric field intensity at a point distance 𝑟 from a hollow conducting sphere of radius 𝑅
with charge +𝑄
i) 𝒓 > 𝑹
𝑄 ∅
∅=𝜀 𝐸=𝐴 𝐴 − Area of the Gaussian surface
°
∅
= 4𝜋𝑟 2
∅
𝜀°
= 4𝜋𝑟 2
1 𝑄
= (4𝜋𝜀 ) 𝑟 2
°
ii) 𝒓 = 𝑹
𝑄 ∅ ∅
∅=𝜀 𝐸 = 𝐴 = 4𝜋𝑅2
°
1 𝑄
𝐸=( )
4𝜋𝜀° 𝑅 2
iii) 𝒓 < 𝑹
𝑄 0
∅=𝜀 =𝜀 =0
° °
𝜙
𝐸= 𝐴
1|Page
• Around a positive point charge
𝑄 ∅ ∅ 1 𝑄
∅=𝜀 𝐸 = 𝐴 = 4𝜋𝑟 2 𝐸 = (4𝜋𝜀 ) 𝑟 2
° °
2|Page
2) Electric field intensity around an insulating sphere of radius 𝑅 with charge +𝑄
i) 𝒓 > 𝑹
𝑄 ∅
∅=𝜀 𝐸=𝐴
°
∅
= 4𝜋𝑟 2
1 𝑄
𝐸 = (4𝜋𝜀 ) 𝑟 2
°
ii) 𝒓 = 𝑹
𝑄 ∅ ∅
𝐷=𝐴 𝐸 = 𝐴 = 4𝜋𝑅2
1 𝑄
𝐸 = (4𝜋𝜀 ) 𝑅2
°
iii) 𝒓 < 𝑹
𝑄 4 3
4 3 × 3 𝜋𝑟
𝑄 𝜋𝑅
∅= =3
𝜀° 𝜀°
𝑄𝑟 3
= 𝜀 𝑅3
°
∅ ∅
𝐸 = 𝐴 = 4𝜋𝑟 2
𝑄𝑟3
𝜀° 𝑅3
= 4𝜋𝑟 2
𝑄
= (4𝜋𝜀 𝑅3)
°
Constant
3|Page
3) The electric field intensity around an infinitely long thin conducting rod of linear charge
density 𝜆
𝑄 𝜆ℓ ∅ ∅
∅= = 𝐸= =
𝜀° 𝜀° 𝐴 2𝜋𝑟ℓ
𝜆ℓ
𝜀° 𝜆 1
𝐸= =( )
2𝜋𝑟ℓ 2𝜋𝜀° 𝑟
4|Page
4) Around a conducting cylinder of infinite length, radius 𝑅 and linear charge density 𝜆
i) 𝒓 > 𝑹
𝜆ℓ
𝑄 𝜆ℓ ∅ 𝜀° 𝜆 1
∅= = 𝐸= = =( )
𝜀° 𝜀° 𝐴 2𝜋𝑟ℓ 2𝜋𝜀° 𝑟
5|Page
ii) 𝒓 = 𝑹
𝜆 1
𝐸 = (2𝜋𝜀 ) 𝑅
°
iii) 𝒓 < 𝑹
𝑄=0 ∴𝐸=0
5) Around an insulating cylinder of infinite length, radius 𝑅, and volume charge density 𝜌,
i) 𝒓 > 𝑹
𝑄 𝜌𝜋𝑅 2 ℓ
∅= =
𝜀° 𝜀°
𝜌𝜋𝑅2 ℓ
∅ 𝜀° 𝜌𝑅 2 1
𝐸=𝐴= = ( 2𝜀 ) 𝑟
2𝜋𝑟ℓ °
ii) 𝒓 = 𝑹
𝑄 𝜌𝜋𝑅 2 ℓ
∅=𝜀 =
° 𝜀°
𝜌𝜋𝑅2 ℓ
∅ 𝜀° 𝜌𝑅
𝐸=𝐴= = 2𝜀
2𝜋𝑟ℓ °
6|Page
iii) 𝒓 < 𝑹
𝑄 𝜌𝜋𝑅 2 ℓ
∅=𝜀 =
° 𝜀°
𝜌𝜋𝑅2 ℓ
∅ 𝜀° 𝜌
𝐸=𝐴= = (2𝜀 ) 𝑟
2𝜋𝑟ℓ °
6) Electric field intensity at a point 𝑟 from a conducting plate of surface charge density 𝜎
𝑄 (𝜋𝑟 2 )𝜎
∅=𝜀 =
° 𝜀°
𝜋𝑟2 𝜎
∅ 𝜀° 𝜎
𝐸=𝐴= =𝜀
𝜋𝑟 2 °
7|Page
This is a uniform electric field because it does not vary with distance from the plate.
7) Electric field intensity around a thin insulating plate of surface charge density 𝜎
𝜋𝑟2 𝜎
𝑄 𝜋𝑟 2 𝜎 ∅ 𝜀° 𝜎
∅= = 𝐸= = =
𝜀° 𝜀° 𝐴 (𝜋𝑟 2 )2 2𝜀°
8|Page
This is a uniform electric field because it does not vary with distance from the plate.
9|Page
8) How the field intensity spreads around infinitely distant conducting plates when they are
brought close to each other
i) Two charged conducting plates of surface charge density +𝜎1 and +𝜎2 are brought
close to each other
𝜎1 > 𝜎2
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If 𝜎1 = 𝜎1 = 𝜎,
ii) Two infinitely distant conducting plates of surface charge densities +𝜎1 and −𝜎2 are
brought close to each other
𝜎1 > 𝜎2
11 | P a g e
Co-centric Sphere Systems
When charges are separated by induction in a sphere system, an opposite charge equal to the
charge inside the sphere must be retained on the inner surface of the sphere. An opposite
charge equal to the charge on that inner surface moves to the outer surface of the sphere.
Although the charges are separated by induction, there is no change in the total charge (net
charge) in a conductor.
Since there is no difference between inner and outer radii when considering very thin spheres,
it is not necessary to consider charge separation by induction when writing field intensities
and potentials.
12 | P a g e
1) A +𝑄 charge is placed at the center of a thin conducting sphere of radius 𝑅
𝐸 𝑉
𝐴 1 𝑄 1 𝑄
4𝜋𝜀° 𝑟 2 4𝜋𝜀° 𝑟
𝐵 1 𝑄 1 𝑄
4𝜋𝜀° 𝑅 2 4𝜋𝜀° 𝑅
𝐶 1 𝑄 1 𝑄
4𝜋𝜀° 𝑟 2 4𝜋𝜀° 𝑟
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2) A −𝑄 charge is placed at the center of a thin conducting sphere of radius 𝑅
𝐸 𝑉
𝐴 1 𝑄 1 𝑄
− 2 −
4𝜋𝜀° 𝑟 4𝜋𝜀° 𝑟
𝐵 1 𝑄 1 𝑄
− 2 −
4𝜋𝜀° 𝑅 4𝜋𝜀° 𝑅
𝐶 1 𝑄 1 𝑄
− 2 −
4𝜋𝜀° 𝑟 4𝜋𝜀° 𝑟
14 | P a g e
3) A thin conducting sphere of radius 𝑅 is given +𝑄1 and +𝑄2 charge is placed at the center
𝐸 𝑉
𝐴 1 (𝑄1 + 𝑄2 ) 1 (𝑄1 + 𝑄2 )
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑟
𝐵 1 (𝑄1 + 𝑄2 ) 1 (𝑄1 + 𝑄2 )
4𝜋𝜀° 𝑅2 4𝜋𝜀° 𝑅
𝐶 1 (𝑄1 + 𝑄2 ) 1 (𝑄1 + 𝑄2 )
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑟
15 | P a g e
4) A thin conducting sphere of radius 𝑅 is given +𝑄1 and −𝑄2 charge is placed at the center
𝑄1 > 𝑄2
𝐸 𝑉
𝐴 1 (𝑄1 − 𝑄2 ) 1 (𝑄1 − 𝑄2 )
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑟
𝐵 1 (𝑄1 − 𝑄2 ) 1 (𝑄1 − 𝑄2 )
4𝜋𝜀° 𝑅2 4𝜋𝜀° 𝑅
𝐶 1 (𝑄1 − 𝑄2 ) 1 𝑄1 1 𝑄2
−
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑅 4𝜋𝜀° 𝑟
𝑄1 = 𝑄2 = 𝑄
𝐸 𝑉
𝐴 0 0
𝐵 0 0
𝐶 −1 𝑄 1 𝑄 1 𝑄
−
4𝜋𝜀° 𝑟 2 4𝜋𝜀° 𝑅 4𝜋𝜀° 𝑟
16 | P a g e
5) Two thin conducting spheres of radii 𝑅1 and 𝑅2 (𝑅1 > 𝑅2 ) are given charges +𝑄3, +𝑄2
and a charge +𝑄1 is placed at the center
𝐸 𝑉
𝐴 1 (𝑄1 + 𝑄2 + 𝑄3 ) 1 (𝑄1 + 𝑄2 + 𝑄3 )
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑟
𝐵 1 (𝑄1 + 𝑄2 + 𝑄3 ) 1 (𝑄1 + 𝑄2 + 𝑄3 )
4𝜋𝜀° 𝑅12 4𝜋𝜀° 𝑅1
𝐶 1 (𝑄1 + 𝑄2 ) 1 𝑄3 𝑄2 + 𝑄1
[ + ]
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑅1 𝑟
𝐷 1 (𝑄1 + 𝑄2 + 𝑄3 ) 1 𝑄3 𝑄1 + 𝑄2
[ + ]
4𝜋𝜀° 𝑅22 4𝜋𝜀° 𝑅1 𝑅2
𝐸 1 𝑄1 1 𝑄3 𝑄2 𝑄1
[ + + ]
4𝜋𝜀° 𝑟 2 4𝜋𝜀° 𝑅1 𝑅2 𝑟
17 | P a g e
18 | P a g e
6) Placing a charge +𝑄1 on a conducting shell of inner radius 𝑅2 and outer radius 𝑅1 and a
charge +𝑄2 at its center.
𝐸 𝑉
𝐴 1 (𝑄1 + 𝑄2 ) 1 𝑄1 + 𝑄2
4𝜋𝜀° 𝑟2 4𝜋𝜀° 𝑟
𝐵 1 (𝑄1 + 𝑄2 ) 1 𝑄1 + 𝑄2
4𝜋𝜀° 𝑅12 4𝜋𝜀° 𝑅1
𝐶 0 1 𝑄1 + 𝑄2
4𝜋𝜀° 𝑅1
𝐷 0 1 𝑄1 + 𝑄2
4𝜋𝜀° 𝑅1
𝐸 1 𝑄2 1 𝑄1 + 𝑄2 −𝑄2 𝑄2
[ + + ]
4𝜋𝜀° 𝑟 2 4𝜋𝜀° 𝑅1 𝑅2 𝑟
19 | P a g e
20 | P a g e
❖ Two co-centric thin conducting spheres of radii 𝑎 and 𝑏 (𝑏 > 𝑎) with +𝑄 charge applied
to the inner sphere and the outer sphere is grounded.
1 𝑄 1 𝑞
0= +
4𝜋𝜀° 𝑏 4𝜋𝜀° 𝑏
❖ Providing a +𝑄 charge to the outer sphere and grounding the inner sphere.
21 | P a g e
❖ The change in potential when a conductor is placed close to a charged particle.
❖ Finding the internal field intensity of a capacitor with surface charge density 𝜎.
22 | P a g e
Deriving an expression for the capacitance of a parallel plate capacitor in terms
of its dimensions.
(1) = (2)
𝑄𝑠
= 𝐸𝑠
𝐴𝜀°
𝑄
𝐸= → (3)
𝐴𝜀°
𝑣
𝐸=
𝑑
𝑉 = 𝐸𝑑
𝑄
𝑣 = 𝐴𝜀 𝑑 → (4)
°
𝑄 = 𝑐𝑣
𝑄𝑑
𝑄 = 𝑐 𝐴𝜀
°
𝐴𝜀°
𝑐=
𝑑
Thus, the capacitance of a parallel plate capacitor depends on the area of the plates, the
distance between the plates and the dielectric material used.
23 | P a g e
Capacitor Systems
Equivalent Capacitance
A single capacitor that can do the work done by a system of capacitors is called an equivalent
capacitor.
Thus, there are 2 main ways in which a capacitor system can exist.
𝑣 = 𝑣1 + 𝑣2 + 𝑣3 𝑄 = 𝑐𝑣
𝑄 𝑄 𝑄 𝑄
= + +
𝑐 𝑐1 𝑐2 𝑐3
1 1 1 1
= + +
𝑐 𝑐1 𝑐2 𝑐3
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2) Parallel capacitor systems
𝑄 = 𝑄1 + 𝑄2 + 𝑄3
𝑄 = 𝑐𝑣
𝑐𝑣 = 𝑐1 𝑣 + 𝑐2 𝑣 + 𝑐3 𝑣
𝑐 = 𝑐1 + 𝑐2 + 𝑐3
25 | P a g e
When parallel plate capacitors are filled with dielectric material in the space
(gap) between the plates
1) When the space (gap) between the plates is completely filled with a material of dielectric
constant
𝐴𝜀 𝐴𝐾𝜀°
𝑐= 𝜀 = 𝐾𝜀° 𝑐=
𝑑 𝑑
2)
𝐴 𝐾1 𝜀° 𝐴 𝐾2 𝜀° 𝐴𝜀°
𝑐 = 𝑐1 + 𝑐2 = +2 = = [𝑘1 + 𝑘2 ]
2 𝑑 𝑑 2𝑑
3)
1 1 1 𝐾1 𝐴𝜀°
=𝑐 +𝑐 𝑐1 = 𝑑
𝑐 1 2
2
1 𝑐1 +𝑐2 𝐾1 𝐴𝜀°
= 𝑐2 = 𝑑
𝑐 𝑐1 𝑐2
2
𝑐 𝑐
𝑐 = 𝑐 1+𝑐2
1 2
2𝐾1 𝐴𝜀° 2𝐾2 𝐴𝜀°
×
𝑑 𝑑
= 2𝐾1 𝐴𝜀° 2𝐾2 𝐴𝜀°
+
𝑑 𝑑
2𝐴𝜀° 2
( ) 𝐾1 𝐾2
𝑑
= 2𝐴𝜀°
( )[𝐾1 +𝐾2 ]
𝑑
2𝐴𝜀° 𝐾1 𝐾2
= (𝐾 )
𝑑 1 +𝐾2
26 | P a g e
4)
27 | P a g e
5)
6)
𝜀° 𝐴𝐾𝜀° 𝐴𝜀°
𝑐1 = 𝑐2 = 𝑐3 =
𝑎 𝑡 𝑏
1 1 1 1
= + +
𝑐 𝑐1 𝑐2 𝑐3
𝑎 𝑡 1
= + +
𝐴𝜀° 𝐴𝐾𝜀° 𝐴𝜀°
1 𝑡
= {𝑎 + + 𝑏}
𝐴𝜀° 𝐾
1 𝑡
= {𝑑 − 𝑡 − }
𝐴𝜀° 𝐾
1 𝑘(𝑑−𝑡) 𝑘𝐴𝜀°
𝑐 = 𝐴𝜀 { + 𝑡} 𝑐 = 𝑘(𝑑−𝑡)+𝑡
° 𝐾
28 | P a g e
Multi-plate capacitors
𝐴𝜀
𝑐 = (𝑛 − 1)
𝑑
𝑄 = 𝑐𝑣
1
𝑣 = ( )𝑄
𝑐
𝑦 = 𝑚𝑥
1 1 1 𝑄2
𝐸 = Area of the graph = 2 × 𝑄𝑣 = 2 × 𝑐𝑣2 = 2 𝑐
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