Digital Isolator Design Guide
Digital Isolator Design Guide
Application Note
Digital Isolator Design Guide
ABSTRACT
This design guide helps system designers of galvanically isolated systems to begin designing with TI's broad
portfolio of digital isolators and isolated functions in the shortest time possible. This portfolio includes the
ISO78xx family of 5.7-kVrms reinforced digital isolators, the ISO67xx and ISO77xx family of 5-kVrms digital
isolators, the ISO73xx family of 3-kVrms digital isolators, and the ISO71xx family of 2.5-kVrms digital isolators,
among others. This document explains the basic operating principle of an isolator, suggests where to place
it within a system design, and recommends guidelines for an electromagnetic compatible (EMC) circuit-board
design. When looking for a reliable and robust upgrade to your optocoupler designs, consider TI's pin-to-pin
opto-emulator products.
Further information is available in the respective product data sheets and the EVM manuals.
Table of Contents
1 Operating Principle.................................................................................................................................................................3
1.1 Edge-Based Communication............................................................................................................................................. 3
1.2 On-Off Keying (OOK) Based Communication.................................................................................................................... 4
2 Typical Applications for Digital Isolators and Isolated Functions..................................................................................... 5
3 Digital Isolator Selection Guide.............................................................................................................................................8
3.1 Parameters of Interest........................................................................................................................................................8
3.2 Isolator Families................................................................................................................................................................. 9
4 PCB Design Guidelines........................................................................................................................................................10
4.1 PCB Material.................................................................................................................................................................... 10
4.2 Layer Stack...................................................................................................................................................................... 10
4.3 Creepage Distance.......................................................................................................................................................... 10
4.4 Controlled Impedance Transmission Lines...................................................................................................................... 11
4.5 Reference Planes.............................................................................................................................................................13
4.6 Routing.............................................................................................................................................................................14
4.7 Vias.................................................................................................................................................................................. 15
4.8 Decoupling Capacitors..................................................................................................................................................... 17
5 Summary............................................................................................................................................................................... 19
6 References............................................................................................................................................................................ 19
7 Revision History................................................................................................................................................................... 19
List of Figures
Figure 1-1. Conceptual Block Diagram of Edge-Based Architecture...........................................................................................3
Figure 1-2. Conceptual Block Diagram of On-Off Keying (OOK) Architecture.............................................................................4
Figure 1-3. Representative Signal in OOK Architecture.............................................................................................................. 4
Figure 2-1. Example Isolator in a 16-Pin Package...................................................................................................................... 5
Figure 2-2. Isolated SPI Interface................................................................................................................................................ 6
Figure 2-3. Isolated RS-232 Interface..........................................................................................................................................6
Figure 2-4. Isolated RS-485 Interface..........................................................................................................................................7
Figure 2-5. Integrated Isolated RS-485 Interface........................................................................................................................ 7
Figure 4-1. Recommended Layer Stack.................................................................................................................................... 10
Figure 4-2. Groove Cutting Extends Effective Creepage Distance............................................................................................ 11
Figure 4-3. Source Impedance Matching: Z0 ~ rO .....................................................................................................................11
Figure 4-4. Isolator Output Characteristic.................................................................................................................................. 11
Figure 4-5. Characteristic Impedance as a Function of the w/h Ratio....................................................................................... 12
Figure 4-6. Reducing Field Fringing Through Close Electric Coupling Between Conductors................................................... 13
Figure 4-7. Ground Plane Acting as a Single Return Trace.......................................................................................................14
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Figure 4-8. Return Current Paths in Solid Versus Slotted Ground Planes................................................................................ 14
Figure 4-9. Separate Traces to Minimize Crosstalk...................................................................................................................14
Figure 4-10. Use 45° Bends Instead of 90° Bends.................................................................................................................... 14
Figure 4-11. Avoiding Via Clearance Sections...........................................................................................................................15
Figure 4-12. Connect Bypass Capacitor Directly to VCC Terminal............................................................................................. 15
Figure 4-13. Return Current Paths for a Single and a Multiple Layer Change.......................................................................... 16
Figure 4-14. Return Current Paths for a Single and a Multiple Layer Change.......................................................................... 17
Figure 4-15. Capacitor Losses Modeled by a Series Resonance Circuit.................................................................................. 17
Figure 4-16. Capacitor Impedance Versus Frequency.............................................................................................................. 18
List of Tables
Table 3-1. Digital Isolator Families and Isolated Functions..........................................................................................................9
Table 4-1. Microstrip Equations for 0.2 < w/d < 1(1) .................................................................................................................. 13
Trademarks
All trademarks are the property of their respective owners.
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www.ti.com Operating Principle
1 Operating Principle
Isolation is a means of preventing dc and unwanted ac currents between two parts of a system, while
allowing signal and power transfer between those two parts. Electronic devices and semiconductor ICs used for
isolation are called isolators. In general, an isolator can be abstracted as comprising of a high-voltage isolation
component or barrier, a transmitter (TX) to couple signal into one side of the isolation component, and a receiver
(RX) to convert the signal available on the other side of the isolation component into digital levels.
TI's isolators use SiO2 (silicon dioxide) based, high-voltage capacitors to serve as the isolation component. For
the TX and RX circuits, two different architectures are used: Edge based and On-Off Keying (OOK) based.
These architectures are explained in Section 1.1 and Section 1.2.
1.1 Edge-Based Communication
The conceptual block diagram of edge-based communication is shown in Figure 1-1. The isolators of ISO73xx,
ISO74xx, ISO71xx, ISO76xx, ISO75xx, and ISO72xx families use this architecture in some form.
The device consists of at least two data channels, a high-frequency channel (HF) with a bandwidth from 100kbps
up to 150Mbps, and a low-frequency channel (LF) covering the range from 100kbps down to dc.
In principle, a single-ended input signal entering the HF-channel is split into a differential signal via the inverter
gate at the input. The following capacitor-resistor networks differentiate the signal into small and narrow
transients, which then are converted into rail-to-rail differential pulses by two comparators. The comparator
outputs drive a NOR-gate flip-flop whose output feeds an output multiplexer. A decision logic (DCL) at the
driving output of the flip-flop measures the durations between signal transients. If the duration between two
consecutive transients exceeds a certain time limit (as in the case of a low-frequency signal) the DCL forces the
output-multiplexer to switch from the high-frequency to the low-frequency channel.
Because low-frequency input signals require the internal capacitors to assume prohibitively large values, these
signals are pulse-width modulated (PWM) with the carrier frequency of an internal oscillator, thus creating a
sufficiently high frequency, capable of passing the capacitive barrier. As the input is modulated, a low-pass filter
(LPF) is needed to remove the high-frequency carrier from the actual data before passing it on to the output
multiplexer.
Isolation Barrier
OSC
LPF
Low-Frequency
Channel PWM VREF
(DC...100 kbps)
0
OUT
1 S
IN
TXP RXP
DCL
High-Frequency
Channel VREF
(100 kbps...150 Mbps)
TXN RXN
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OOK
Modulation
TX IN SiO2 Based
TX Signal Capacitive RX Signal Pre-amp Envelope RX OUT
Conditioning Isolation Conditioning Detection
Barrier
Spread
Oscillator
Spectrum
TX IN
Signal through
isolation barrier
RX OUT
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www.ti.com Typical Applications for Digital Isolators and Isolated Functions
VCC1 1 16 VCC2
GND1 2 15 GND2
INA 3 14 OUTA
Isolation
INB 4 13 OUTB
OUTC 5 12 INC
OUTD 6 11 IND
EN1 7 10 EN2
GND1 8 9 GND2
Not to scale
A pin diagram of a typical digital isolator is shown in Figure 2-1. It consists of two supplies: VCC1 and VCC2 , two
grounds: GND1 and GND2, and input and output pins on either side referred to the respective grounds. That is,
in Figure 2-1, pins 1 through 8 are referred to GND1 and pins 9 through 16 are referred to GND2.
Digital isolators use single-ended, CMOS or TTL logic, switching technology. The voltage range normally ranges
3 V to 5.5 V for both supplies, VCC1 and VCC2, though some devices may support a larger supply voltage range.
For example, ISO78xx devices can work with supplies down to 2.25 V. When designing with digital isolators, it is
important to keep in mind that due to the single-ended design structure, digital isolators do not conform to any
specific interface standard and are only intended for isolating single-ended digital signal lines.
Isolated functions are devices where additional functionality, such as a transceiver or a gate-driver is integrated
along with an isolator. An example is the integrated isolated-RS485 described later on in this section. Unlike
digital isolators, an isolated function may need to conform to certain standards. For example, an isolated-I2C
buffer will be compatible to the I2C standard. Also, an isolated function may run off higher supplies, for example,
an isolated gate-driver may use ±15 V to be able to drive an IGBT gate.
Isolation is required in modern electrical systems for a variety of reasons. Some examples are to protect
human operators from high voltage transients and preventing damage to expensive processors, ASICs or
FPGAs in high-voltage systems, breaking the ground loop in communication networks and communication to
high-side devices in motor drive or power converter systems. Examples of applications that need isolation
include industrial automation systems, motor drives, medical equipment, solar inverters, power supplies, and
hybrid electric vehicles (HEV).
Some example applications of digital isolators and isolated functions are presented in this section. Read more
on the performance of digital isolators in relation to common mode transient immunity and high working voltages
in Pushing the envelope with high-performance, digital-isolation technology white paper. For more examples,
detailed application diagrams and use cases, please refer the respective product datasheets.
Figure 2-2 presents the most simple isolator application. Here the entire circuit constitutes a single-ended,
low-voltage system in which a digital isolator connects the SPI interface of a controller with the SPI interface
of a data converter. The most commonly applied isolators in SPI interfaces are ISO7x31 and ISO7x41, hence
often designated as 3- and 4-channel SPI isolators. For an implementation of isolated SPI read, How to Replace
Optocouplers with Digital Isolators in Standard Interface Circuits, and Simplify current and voltage monitoring
with isolated SPI and I2C in your battery management systems (BMS).
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3V 3V 3 VISO 3 VISO
CS CS
Isolation
SCK SCK
Microcontroller ADC
PICO PICO
POCI POCI
The full-blown, isolated RS-232 interface in Figure 2-3 requires two quad isolators due to the six control
signals required in addition to the actual data lines, RX and TX. Although the entire system is single-ended,
the high-voltage requirements of the symmetric, 13-V bus supply make it necessary to galvanically isolate the
data link between the UART and the low-voltage side of the bus transceiver. Also, the 13-V dc bus may be in
turn generated from a higher supply, in which case the isolation also serves as a means of protection against
high-voltage transients on the system supply lines.
+12V
3V 3V 5VISO 5VISO
RX
RX
TX
Isolation
D0 – D7 D0 – D7 TX
/RTS
/RTS
MEMR or I/OR /DTR
/IOR /DTR 5
MEMW or I/OW 9
CPU - BUS
/IOW
RS-232
Connector
UART
DBS-9
INTR Drivers and
INT 3V 5VISO Receivers
RESET
RESET /DSR
/DSR 6
A0 1
A0 /CD
Isolation
/CD
A1
A1 /CTS
/CTS
A2
A2 /RI
/RI
-12V
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As in the example in Figure 2-3, the isolation of the RS-485 interface in Figure 2-4 occurs between the controller
and the bus transceiver. Despite the entire interface circuit being a low-volt system, the differential nature
of the transmission bus requires prior isolation on the single-ended side. In a multi-node distributed RS-485
network, different nodes may be referenced to grounds at different potential, in which case isolation enables
communication by level shifting between those ground potentials.
3V 3V 3VISO 3VISO
DOUT D
Isolation
Host DE
Controller DIR
RE
DIN R
Due to the simplicity of the interface shown in Figure 2-5, it is possible to integrate the isolator function into the
transceiver circuit, thus providing an application-specific isolator device featuring low-cost and low component
count. Figure 2-5 is an example of an isolated function. For diagrams of how to implement these RS-485
solutions, read How to isolate signal and power for an RS-485 system.
3V 3V 3VISO
DOUT D
Isolation
Host
DIR DE
Controller
RE
DIN R
Not all applications of digital isolators and isolated functions are covered here. These are just examples to
understand how the isolator is placed in a system. For more examples, detailed application diagrams, and use
cases, please refer the respective product data sheets.
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High-speed traces
10 mils
Ground plane
Power plane
10 mils
Low-speed traces
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power/ground plane system
to the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping.
Also, the power and ground plane of each power system can be placed closer together, thus increasing the
high-frequency bypass capacitance significantly.
4.3 Creepage Distance
Creepage distance is the shortest path between two conductive parts measured along the surface of the
insulation. An adequate creepage distance protects against tracking, a process that produces a partially
conducting path of localized deterioration on the surface of an insulating material as a result of the electric
discharges on or close to an insulation surface.
The degree of tracking occurring depends on the comparative tracking index (CTI) of the material and the
degree of pollution in the environment. Used for electrical insulating materials, the CTI provides a numerical
value of the voltage that will cause failure by tracking during standard testing. IEC 112 provides a fuller
explanation of tracking and CTI.
Tracking damaging the insulating material normally occurs because of one or more of the following reasons:
humidity in the atmosphere, presence of contamination, corrosive chemicals, and altitude at which equipment is
to be operated.
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As isolation voltage levels continue to rise, it is more important than ever to have a robust PCB design that not
only reduces electromagnetic interference emissions, but also reduces creepage problems. In addition to wide
isolator packaging, techniques such as grooves can be used to attain a desired creepage distance (see Figure
4-2).
Dirt Particles
Groove
For a groove (>1 mm wide), the only depth requirement is that the existing creepage distance plus the width of
the groove and twice the depth of the groove must equal or exceed the required creepage distance. The groove
must not weaken the substrate to a point that it fails to meet mechanical test requirements.
Also, on all layers keep the space under the isolator free from traces, vias, and pads to maintain maximum
creepage distance (see Figure 4-1).
4.4 Controlled Impedance Transmission Lines
A controlled impedance transmission line is a trace whose characteristic impedance, Z0, is tightly controlled by
the trace geometries. In general, these traces match the differential impedance of the transmission medium,
such as cables and line terminators, to minimize signal reflections. Around digital isolators, controlled impedance
traces must match the isolator output impedance, Z0 ~ rO, which is known as source-impedance matching.
Isolator
Output
rO Trace
Receiver
Z0 ~ r O
To determine Z0, the dynamic output impedance of the isolator, rO = ΔVOUT/ΔIOUT, needs to be established. For
that purpose the output characteristic in Figure 4-4, (taken from the ISO7240 data sheet), is approximated by
two linear segments indicating an rO ~ 260 Ω at low voltages, while for the majority of the curve, (and thus the
transition region of the output), rO ~ 70 Ω.
50
40
Z0 ~ 260 W
30
IOUT (mA)
20
Z0 ~ 70 W
10
0
0 1 2 3 4 5 6
VOUT (V)
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The required trace geometries, such as trace thickness (t) and width (w), the distance between trace and an
adjacent ground layer (d), and the PCB dielectric (εr), are partially dictated by the copper-plating capabilities of
the board manufacturing process and the dielectric of the chosen board material. Typical values are 1 and 2 oz
of copper-plating, resulting in trace thicknesses of t = 1.37 mils and t = 2.74 mils, respectively. Dielectric values
for FR-4 epoxy-glass vary between εr = 2.8 to 4.5 for microstrip, and εr = 4.5 for stripline traces.
With t and εr given, the designer has the freedom to define Z0 through trace width w, and distance d. For PCB
designs, however, the most critical dimensions are not the absolute values of w and d, but their ratio w/d. Easing
the designer’s task, Figure 4-5 plots the characteristic trace impedance as a function of the width-to-height (w/h)
for a trace thickness of 2.74 mils (2-oz copper plating), an FR-4 dielectric of 4.5, and a trace-height of 10 mils
above the ground plane.
100
h = 10mils
t = 2.74mils
50 e r = 4.5
w
Z0 - W
20
er h
10
0.1 0.2 0.5 1 2 5 10
w/h - ratio
From Figure 4-5 it is apparent that a 70-Ω design requires a w/h ratio of about 0.8. As described in the following
section, Reference Planes, designing a low EMI board requires close electric coupling between signal trace and
ground plane, which is accomplished by ensuring that h = 10 mils. The corresponding trace-width is therefore
8 mils. This width must be maintained across the entire trace length. Otherwise, variations in trace width cause
discontinuities in the characteristic impedance, thus leading to increased reflections and EMI.
Note, that the preceding design example is only one of many possibilities to achieve the desired Z0. Different
trace thickness due to higher or lower copper plating, or different PCB material can be used, but require the w/d
ratio to change. The rather complex, mathematic equations for calculating the characteristic impedance Z0, while
taking trace thickness, width, and dielectric into account, are presented in Table 4-1.
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Table 4-1. Microstrip Equations for 0.2 < w/d < 1(1)
εeff = effective dielectric, taking into account:
é ù • dielectric of air
er + 1 e r - 1 ê 2 ú
ê 1 æ wö t ú • dielectric of PCB material
e eff = + × + 0.04 ´ ç 1- ÷ -
2 2 ê 12 ´ h è hø 2.3 ´ w ´ h ú
ê 1+ ú • height above ground
ë w û
• nominal trace width
(1) Keep all dimensions in inch, or mils (1 in = 1000 mils), or mm (1 in = 25.4 mm).
t Fringing t
H fields
Fringing
fields
Figure 4-6. Reducing Field Fringing Through Close Electric Coupling Between Conductors
Now imagine a second conductor in close proximity, carrying a current of equal amplitude but opposite polarity.
In this case, the conductors’ opposing magnetic fields cancel, while their electric fields tightly couple. The TEM
waves of the two conductors, now being robbed of their magnetic fields, cannot radiate into the environment.
Only the far smaller fringing fields might be able to couple outside, thus yielding significantly lower EMI.
Figure 4-7 shows the same effect occurring between a ground plane and a closely coupled signal trace.
High-frequency currents follow the path of least inductance, not the path of least impedance. Because the return
path of least inductance lies directly under a signal trace, returning signal currents tend to follow this path. The
confined flow of return current creates a region of high current density in the ground plane, right below the signal
trace. This ground plane region then acts as a single return trace, allowing the magnetic fields to cancel while
providing tight electric coupling to the signal trace above.
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fringing fields
To provide a continuous, low-impedance path for return currents, reference planes (power and ground planes)
must be of solid copper sheets and free from voids and crevices. For reference planes, it is important that the
clearance sections of vias do not interfere with the path of the return current. In the case of an obstacle, the
return current finds its way around it. However, by doing so, the current’s electromagnetic fields will most likely
interfere with the fields of other signal traces introducing crosstalk. Moreover, this obstacle adversely affects the
impedance of the traces passing over it, thus leading to discontinuities and increased EMI.
Load
Circuit trace
Ground plane
disruption
Figure 4-8. Return Current Paths in Solid Versus Slotted Ground Planes
4.6 Routing
Guidelines for routing PCB traces and placing components are necessary when trying to maintain signal
integrity, avoiding noise pick-up, and lower EMI. Although an endless number of precautions seems to be taken,
this section provides only a few main recommendations as layout guidance.
1. Keep signal traces 3 times the trace-to-ground height, (d = 3h), apart to reduce crosstalk down to 10%.
Because the return current density under a signal trace diminishes via a 1/ [1+(d/h)2] function, its density at a
point d > 3h, is sufficiently small to avoid causing significant crosstalk in an adjacent trace.
d
1
1 + (d/h)2 h
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4. When routing traces next to a via or between an array of vias, ensure that the via clearance section does
not interrupt the path of the return current on the ground plane below. If a via clearance section lies in the
return path, the return current finds a path of least inductance around it. By doing so, it may cross below
other signal traces, thus generating cross-talk and increase EMI.
VCC
VCC plane
vias
1.41 × e r × T × D1
C=
D 2 - D1 (1)
where
• D2 = diameter of clearance hole in ground planes, [in.].
• D1 = diameter of pad surround via, [in.].
• T = thickness of printed circuit board, [in.].
• εr = dielectric constant of the circuit board.
• C = parasitic via capacitance, [pF].
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Because the capacitance increases proportional with size, trace vias in high-speed designs must be as small as
possible to avoid signal degradation caused by heavy capacitive loading.
When connecting decoupling capacitors to a ground plane or interconnecting ground planes, the via inductance
becomes more important than its capacitance. The magnitude of this inductance is approximately:
é æ 4 ´ hö ù
L = 5.08 ´ h ´ êln ç ÷ +1ú
ë è d ø û (2)
where
• L = via inductance, [nH].
• h = via length, [in.].
• d = via diameter, [in.].
Because this equation involves a logarithm, changing the via diameter does little to influence the inductance.
A big change may be effected by changing the via length or by using multiple vias in parallel. Therefore,
connect decoupling capacitors to ground by using two paralleled vias per device terminal. For low inductance
connections between ground planes, use multiple vias in regular intervals across the board.
Although it is highly recommended not to change layers of high-speed traces, if the necessity still occurs, ensure
a continuous return current path. Figure 4-13 on the left shows the flow of the return current for a single layer
change and on the right for a multiple layer change.
Signal Signal
current current
Return
current Ground Ground
plane plane
Return
current Power
plane
Figure 4-13. Return Current Paths for a Single and a Multiple Layer Change
The ability for the current flow to change from the bottom to the top of the ground plane is provided by a metallic
laminate of the inner clearance ring. Thus, when a signal passes through a via and continues on the opposite
side of the same plane, a return current discontinuity does not exist.
Changing a signal trace from one layer to another by crossing multiple reference planes complicates the design
of the return current path. In the case of two ground planes, a ground-to-ground via must be placed near the
signal via to ensure a continuous return current path, (right diagram in Figure 4-13).
If the reference planes are of different voltage potentials, such as the power and ground planes in Figure 4-14,
the design of the return path becomes messy as it requires a third via and a decoupling capacitor. The return
current flow begins at the bottom of the power plane, where it is closest to the signal current. It then flows
through the power via, across the decoupling capacitor into the ground via and returns on top of the ground
plane.
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Decoupling
capacitor
Signal
current
Ground
plane
Return
Power
current
plane
Figure 4-14. Return Current Paths for a Single and a Multiple Layer Change
Current return paths comprising multiple vias and decoupling capacitors possess high inductance, thus
compromising signal integrity and increasing EMI. If possible, avoid changing layers during high-speed trace
routing, as it usually worsens board performance, complicates design, and increases manufacturing cost.
4.8 Decoupling Capacitors
Decoupling capacitors provide a local source of charge for ICs requiring a significant amount of supply current
in response to internal switching. Insufficient decoupling causes a lack of supply current required which may
prevent the IC from working properly, resulting in signal integrity data errors to occur. This requires them to
provide low impedance across the frequency range of interest. To accomplish that, a common approach is to
distribute an array of decoupling capacitors evenly across the board. In addition to maintaining signal integrity,
decoupling capacitors serve as EMC filters preventing high-frequency RF signals from propagating throughout
the PCB.
When connecting a capacitor between the power and ground planes, the power supply is actually loaded with a
series resonant circuit, whose frequency dependent R-L-C components represent the equivalent circuit of a real
capacitor. Figure 4-15 shows the parasitic components of an initial equivalent circuit and their conversion into a
series resonant circuit.
RL
RD CD
The leakage resistance RL represents the loss through leakage current at low frequencies. RD and CD indicate
the losses due to molecular polarization, (RD), and dielectric absorption, (CD). RS depicts the resistance in
the leads and the plates of the capacitor. The three resistive losses are combined into one equivalent series
resistance (ESR). As in the ESR case, the equivalent series inductance (ESL) combines the inductance of the
capacitor plates and the internal leads.
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Note that the capacitor connecting vias, although low in impedance, contribute a significant amount to the series
inductance. Therefore, reduce via inductance by using two vias per capacitor terminal.
Figure 4-16 shows the progression of capacitor impedance (Z) versus frequency for a 10-nF capacitor. At
frequencies far below the self-resonance frequency (SRF), the capacitive reactance is dominant. Closer to SRF,
the inductive reactance gains influence trying to neutralize the capacitive component. At SRF, the capacitive
and inductive reactance cancel, and only the ESR is effective. Note that the ESR is frequency dependent, and
contrary to popular belief, does not reach its minimum at SRF. The impedance Z, however, does.
100,000
10,000
100 1 nF
10
1 10 nF
0.1
0.01
0.001
0.1 1 10 100 1,000
f - Frequency - MHz
The reason why the paralleling of capacitors in a distributed decoupling network works is because the total
capacitance increases to CTOT = C × n, where n is the number of decoupling capacitors used. And with Xc = 1/(ω
× C), the capacitor impedance is reduced to Xc = 1/(n × ω × C) for frequencies below SRF. Similarly, this holds
true for the inductance. Here LTOT = L/n, and because XL = ω × L, the impedance decreases to XL = ω × L/n for
frequencies above SRF.
Designing a solid decoupling network must include lower frequencies down to dc, which requires the
implementation of large bypass capacitors. Therefore, to provide sufficient low impedance at low frequencies,
place 1-μF to 10-μF tantalum capacitors at the output of voltage regulators and at the point where power is
supplied to the PCB. For the higher frequency range, place several 0.1-μF or 0.01-μF ceramic capacitors next to
every high-speed switching IC.
18 Digital Isolator Design Guide SLLA284G – JULY 2022 – REVISED SEPTEMBER 2023
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www.ti.com Summary
5 Summary
This design guide helps system designers of galvanically isolated systems to begin designing with TI's broad
portfolio of digital isolators and isolated functions in the shortest time possible. This document explains the basic
operating principle of an isolator, suggests where to place it within a system design, and recommends guidelines
for an EMC-compatible circuit-board design. Despite the enormous amount of technical literature, seminars,
newsletters, and internet forums on PCB design, this document provides designers with layout guidelines in
a comprehensive way. By following the recommendations presented herein, designers can accomplish EMC-
compliant board design in the shortest time possible.
Read our blog, Robust isolators prevent you from saying “I see dead circuits!”
6 References
1. Texas Instruments, Pushing the envelope with high-performance, digital-isolation technology analog
applications journal.
2. Texas Instruments, Enabling high voltage signal isolation quality and reliability white paper.
3. Texas Instruments, High-voltage reinforced isolation: Definitions and test methodologies marketing white
paper.
4. High-speed Digital Design, Johnson/Graham, 1993.
5. Noise Reduction Techniques in Electronic Systems, Ott, 1988.
6. Eliminating the myths about printed circuit board power/ground plane decoupling, Archambeault, 2001.
SLLA284G – JULY 2022 – REVISED SEPTEMBER 2023 Digital Isolator Design Guide 19
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Revision History www.ti.com
7 Revision History
Changes from Revision F (July 2022) to Revision G (September 2023) Page
• Added link to TI's opto-emulator overview..........................................................................................................1
20 Digital Isolator Design Guide SLLA284G – JULY 2022 – REVISED SEPTEMBER 2023
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