Ex.

No: 06
Date:

CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
(i) To plot the forward and reverse V-I characteristics of given PN-junction
diode.

(ii) To find the dynamic forward and reverse resistance offered by the PN-
diode.

APPARATUS REQUIRED:

S.NO APPARATUS RANGE QUANTITY

1. RPS (0-30) V 1
2. PN junction diode IN 4007 1
3. Resistor 1 kΩ 1
4. Voltmeter (0-1) V 1
(0-10) V 1
5. Ammeter (0-10) mA 1
(0-500) µA 1
7. Bread Board - 1
8. Connecting wires - few

THEORY:
The V-I characteristics is a graph drawn between the voltage applied across the

terminals of a device and the current that flows through it.

The characteristics of PN junction diode are classified as,

• Forward V-I characteristics (Forward bias).

• Reverse V-I characteristics (Reverse bias)

FORWARD BIAS:
30 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)
 • In forward bias, the positive terminal of the battery is connected with P side (anode)
of the diode and the negative terminal of the battery is connected with the N side
(cathode) of the diode.
• When a diode is connected in the forward bias, the electrons of the N material and
holes of the P material are repelled by the negative and positive terminals of the
battery respectively towards the junction. Some of the electrons and holes enter into
the depletion region and they are recombines with each other. This reduces the
width as well as height of the potential barriers.
• As a result of this, more majority carriers diffuse across the junction. Therefore it
causes a large current to flow through the PN junction. The forward voltage at
which the diode starts to conduct is called cut-in voltage, knee voltage (or)
threshold voltage.
• Normally the cut-in voltage for silicon diode is 0.7V and the germanium diode is
0.3V.so we can say the diode conducts the signal only in forward bias. In other
words, the diode is ON in forward bias.
REVERSE BIAS:

• In reverse bias, the negative terminal of the battery is connected with P side (anode)
of the diode and the positive terminal of the battery is connected with the N side
(cathode) of the diode.
• When a diode is connected in reverse bias, the electrons of the N material and holes
of the P materials are attracted by the positive terminal and negative terminal of the
battery respectively.
• If we increase the reverse voltage, the depletion region width and the height of the
potential barrier is increased. Therefore there is no possibility of majority charge
carrier current can flow across a reverse-biased junction.
• The minority carriers generated on each side can still cross the junction. Electrons
in the p-side are attracted across the junction to the positive voltage on the n-side.
Holes on the n-side may flow across to the negative voltage on the p-side. Since
only a very small reverse current can flows through the junction.
• The reverse voltage at which the diode starts to conduct is called breakdown
voltage. So, we can say the diode won’t conduct the signal in its reverse bias. In
other words the diode is OFF in reverse bias.
CIRCUIT DIAGRAM-FORWARD BIAS:
31 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)
PN JUNCTION DIODE-SYMBOL

PN JUNCTION DIODE (IN 4007) -PIN CONFIGURATION

P N

TABULATION:

S.NO FORWARD VOLTAGE VF (V ) FORWARD CURRENT I F ( mA)

32 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)
 1

10

CIRCUIT DIAGRAM-REVERSE BIAS:

TABULATION:

33 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)
 S.NO REVERSE VOLTAGE VR (V ) REVERSE CURRENT I R (  A)
1

10

PROCEDURE:

PN-JUNCTION DIODE FORWARD BIAS

1. The connections are given as per the circuit diagram.

2. Vary the supply voltage from RPS in steps and note down the voltmeter

readings.

3. The corresponding current is noted from Ammeter and tabulated.

4. Plot the graph between forward voltage VF (V ) and forward current

I F (mA) .

34 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)
 5. From the graph calculate the Forward dynamic resistance using the

formula,

1
Dynamic resistance, ri =
Slope of the forward characteristics

I F
Slope =
VF

Change in voltage V
ri = = F
Resulting change in current I F
MODEL GRAPH:

V-I CHARACTERISTICS OF PN JUNCTION DIODE

PROCEDURE:

PN-JUNCTION DIODE REVERSE BIAS

35 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)
 1. The connections are given as per the circuit diagram.

2. Vary the supply voltage from RPS in steps and note down the voltmeter

readings.

3. The corresponding current is noted from Ammeter and tabulated.

4. In reverse bias only limted current flows through the diode.

5. Plot the graph between reverse voltage VR (V ) and reverse current

I R (  A) .

6. From the graph calculate the Reverse dynamic resistance using the

formula,

Dynamic resistance, ri = 1
Slope of the reverse characteristics

I R
Slope =
VR

Change in voltage VR

ri = = 
Resulting change in current I R

RESULT:

Thus the V-I characteristics of PN-junction diode were drawn for both forward and
reverse bias.
1. Dynamic forward resistance was found to be_____________Ω.

2. Dynamic reverse resistance was found to be_____________Ω.

36 DEPARTMENT OF ECE /EGSPEC / I I YEAR- DEVICES AND CIRCUITS LAB MANUAL (2019 reg)