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Unit 2 Ed Question Bank

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Unit 2 Ed Question Bank

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Q1.Interpret the difference between ideal diode and practical diode with the help of VI Characteristics? Q2. How breakdown occur in diodes. Discuss two types of breakdowns in diodes. Differentiate between Avalanche Breakdown and Zener Breakdown. Q3. A)Discuss the working principle of a'p-n junction diode using neat diagram CGrolan lee Mee aay oll eLeltn)) b) Draw the V-I characteristies of a p-n junction diode and label it properly. c) Illustrate with neat diagram the formation process of potential barrier in a PN junction diode. Q4. With the help of diagram explain PN Junction semiconductor Diodes VI characteristic curve by including significance of depletion layer, knee voltage, breakdown voltage, PIV and Reverse saturation current Contrast Knee Voltage with breakdown voltage. Q5. Differentiate between Centre tapped, bridge, half wave rectifier. Do the derivation as well. Which one is more preferable half wave or full wave and why? Q6. Contrast half wave rectifier and full wave rectifier on the ELM Uae Mei dCi a Ae Q7. Sketch the zener Diode as Voltage Regulator. Sketch the circuit diagram of a Voltage regulator and explain its Mela nT: Q8. Describe the behavior of Tunnel diode under forward bias condition. Q9. Describe the generation and recombination of majority and minority carriers in semiconductor diodes in detail. Q10. Define: A. LED 1 rtosatoyad sae lexe(-y C. Solar diode D. Verastor.diode E. Tunnel diode Difference between Ideal diodes and Practical diodes Ideal diodes Ideal diodes act as perfect conductor and perfect insulator. Ideal diode draws no current when reverse biased. Practical diodes Practical diodes cannot act as perfect conductor and perfect insulator. Practical diode draws very low current when reverse biased. Ideal diode offers infinite resistance when reverse biased. It cannot be manufactured. It has zero cut-in voltage. Ideal diode has zero voltage drops across its junction when forward biased. Practical diode offers very high resistance when reverse biased. It can be manufactured. It has very low cut-in voltage. It has very low voltage | drop across it, when forward biased. | CUE Reverse Hos Paar Vv i zg 7 Fonsand bras Se ¥ Pe Si af ey af aa iD ~ — omen iar, | a 5 Hetwoorn the urs. sides Majority comers N aagian, = electrons —2_saqion_= holes 2 uin_voddliti mal eleciions rom the N oat eee eae -mepokive_sehaage __ ——chot x29 Sherat oes | —ensbile charge sronaicn - This 1s_Y¥moum x ion Layer". “Thfekmens ath _ctne_ondes to St oe x — FS = Dian ayer? — 2 B+ The diplitien Joye cmd alm mo fer_amd Fi —mole thay carniers but only “ped ond Peg —sememobile ion a og — Mie envy doped thin Mem Lightly Acted — hic gat = sé _Noltoae Cusocent_ CVT) Unosackershics tf ON “jumckio Diode - a WE _rbannctensAicg of P-N_jumedion diodes — am seuxve between ihe vo Wogan : Mags is token a he x= axis uchile cline euscrent sta Sate tay yes _ dexoribe the Gc. behaviotts sf athe diode “t whem 3k isin _* foruand. pas, mo cwarentk : a UL dhe broodlet. volkoge (0-3 for (te \__is overcome “Them “He tunve thes a ae prin Tit go Hl the emdsiction_bamd- onstort, -the Poosssod Sttnat - . Forigand __Nottage CV) Vottosel Vy yvwwisg € weg vi geen ave to chim = dine _ potenti hi Nh im dade co _caach region, me Electrons cisuing cto euess \xom_ahe Nac aten wets PB surgicn Seep enience “a wietar Sh ty said stnoujne sepelted Sirti laaly 2 fehl “pain P asgion- Pottntiol aia us stadted ~ Qortethial bawnien a——G@e=0-4v 4 sim oy _______—_#* Poe Bona a inet al Foe Cette tn —anaets let che fume e |= sing cthe_soidth —of_dsplets sn —nagian. cl Naxaw deplebion reg inn _________w N__<—= face electro Tg te . ey => __Revorse bias : “The see _elechons amd “Tuo _sieverxe bios pn junction claes not ——aemadiuck cimnenep wiicle depletion Noyen, = <———"s PF ON * Cee Cheers Seq DO” 7 BOO, leeelBQ®. [4 Jeoo|BO® ly —forierd O.ors che von chien vi L_nevense sotiiantt on ——MMors_onmPene Reverse saturation current Current that flows in reverse bias condition is called reverse saturation current. Since this current is due to minority carriers and these number of minority carriers are fixed at a given temperature therefore, the current is almost constant known as reverse saturation current |-o. Reverse saturation current (IS) of diode increases with increase in the temperature the rise is 7%/°C for both germanium and silicon and approximately doubles for every 10°C rise in temperature. Thus if we kept the voltage constant, as we increase temperature the current increases. DSSS Peak Inverse Voltage (PIV) Peak Inverse Voltage (PIV) or Peak Reverse Voltage (PRV) refer to the maximum voltage a diode or other device can withstand in the reverse- biased direction before breakdown. Also may be called Reverse Breakdown Voltage. What is the importance of peak inverse voltage? PIV is the maximum peak voltage that a diode can withstand in the reverse non-conducting region. By withstand, it means that, upto this voltage the diode blocks conduction of current in the reverse direction. Advantages & Disadvantages Advantages:~ - Half wave rectifier is a simple circuit. «It has a low cost. -We can easy to use it. + We can easily construct. -It has a low number of component, therefore it is cheap. ID)eF=le\Welalieale) ~The transfornpeputtilization factor is low. Sut Morac Mery omens atoll Sree Mc olen dso Magnetizing current and also so! ole susie omar uals SU roots Hse hati ast Cire Me MoM MMW Loan biota SON Mel Monroe tat] cycle of the input alternating voltage. Ripple factor is high and elaborate filtering is, therefore Tequired to give steady de output. Sioa ME iafel Nene elses MCN EWohia Morante IMs: Meco he) fra e=F = Full wave Pa In Soul Paereten Un LY through the load in same direction for both half cycle of input ac. This can be achieved with two diodes working alternatively. For one half cycle one diode supplies current to load and for next half cycle another diode MeL Centre tap full wave rectifier Me ceVi an HANNA YA aro Rec ecet c=) transformer. BOT Tey tert) CeM lion ol PL(ole| IP) Meelate eee] Cte er MDa Lee Piete LPY Moola Notch Wixe-uN aa eetcure ance eM eo hat} a Xela leiden Kee i 191 Full-wave Rectifier Output Waveform Full wave bridge a nf Tel eo rectifier, four diodes are arranged in the form of a bridge. + The main advantage of this bridge circuit is that it does not require a special centre tapped transformer. 4 The single secondary winding is connected to one side of the diode bridge network and the load to the other side. Full Wave Bridge Rectifier ——> Fig:~ Circuit diagram of Full Wave Bridge Rectifier. Half wave rectifier VS Fullwave rectifier Particulars Half-wave Full-wave = Bridge No. of diodes 1 2 4 Maximum efficiency 81.2% vd.c. (no load) 2vm/n Average current/diode id.c./2 Ripple factor 0.48 Peak Inverse Voltage (PIV) vm Output frequency 2 Transformer utilisation factor Form factor Peak factor Zener-Diode Voltage-Regulator Circuits Sometimes, a circuit that produces constant output voltage while operating from a variable supply voltage is needed. Such circuits are called voltage regulator. The Zener diode has a breakdown voltage equal to the desired output voltage. * The resistor limits the diode current to a safe value so that Zener diode does not overheat. Variable supply Carrier Generation and Recombination Cartier generation is def ned as the process whereby electron and holes are created and recombination is the process whereby electrons and holes are annihilated. Boundeelectron = free electron + hole Generation of carters (free electrons and holes) The process by which free electrons and holes are generated in pair is called generation of carriers. When electrons in a valence band get enough energy, then they will absorb this energy and jumps into the conduction band. The electron which is jumped into a conduction band i called free electron and the place from where electron left is called hole. Likewise, two type of charge carriers (free electrons and holes) gets generated. Recombination of carriers (free electrons and holes) The process by which free electrons and the holes get eliminated is called recombination of carriers. When free electron in the conduction band falls in to a hole in the valence band, then the free electron and hole gets eliminated. S o> & thas hale Patrmtoke eee. postin Ey S xe fs) | What is a Schottky Diode A Schottky diode is a special type of diode, constructed using a metal-semniconductor junction instead of a p- junction used in other diodes. Due to this, the voltage drop across a Schottky diode when it is conducting a forward current (the “cut-in voltage") is small compared to normal diodes. Cue ee iene V (vats) — 51 (Schottky) — GaAs (Schottky) The V- characteristics of Schottky diodes are very much similar to the PN junction diode. Current is the dependent variable while voltage is the independent variable in the Schottky diode. The forward voltage drop of the Schottky diode is low between 0.2 to 0.3 volts. Working of a Schottky Diode The operation relies on the principle that the electrons in different materials have different potential energy. -N-type semiconductors have higher potential energy than electrons of metals. When these two are brought into contact, there isa flow of electrons in both directions across the metal-semiconductor interface. Avvoltage is applied to the Schottky so that the metal is positive when compared to the semiconductor. The voltage opposes the built-in potential and makes the current flow easy. Potential energy Potential energy is the energy stored within an object, due to the object's Position, arrangement or state Potential energy is one of the two main forms of energy, along with kinetic energy. Potential and Kinetic Energy of Tunnel diode A Tunnel diode is a heavily doped p-n junction diode in which the electric current decreases as the voltage increases. In tunnel diode, electric current is caused by “Tunneling”. The tunnel diode is used as a very fast switching device in computers. It is also used in high-frequency oscillators and amplifiers. 1 ‘Anode Cathode Petpet, _Neype ° ° Tunnel diode symbol Peak Point ma. — Forward current I. \V-l Characteristic of Tunnel Diode Varactor Diode Definition: The diode whose intemal capacitance varies with the variation of the reverse voltage such type of diode is known as the Varactor diode. It is used for storing the charge. The varactor diode always works in reverse bias, and it is a voltage-dependent semiconductor device Depletion Region Anode Cathode P-Region Y_N-Region 7 Diode Parallel Plate ® Capacitor ® E + Voltage Depletion Region in a Reverse Blased P-N junction eA ang Characteristic of Varactor Diode The characteristic curve of the varactor diode is shown in the figure below. The graph shows that when the reverse bias voltage increases the depletion region increases, and the capacitance of the diode reduces. varactor diodes are advantageous as they are compact in (0) size, economical, reliable and less prone to noise when, compared to other diodes. Hence, they are used in Tuning circuits to replace the old style variable capacitor tuning of FM radio 2.Small remote control circuits ‘ 3.Tank circuits of receiver or transmitter for auto-tuning asin case of TV 4.Signal modulation and demodulation. S.Microwave frequency multipliers as a component of LC resonant circuit 6.Very low noise microwave parametric amplifiers Reverse Bias in Volts 7.AFC circuits — 8.Adjusting bridge circuits S.Adjustable bandpass filters 1O.Voltage Controlled Oscillators (VCOs) T.RF phase shifters 12.Frequency multipliers Crin PF dhe junction bewndany oh amined, caters —dncasnses The exenss —Smimeniby ccaxrion od dhe junction “isucmmabine with the —majerity |__ond_Clertvical phemememen ushant a cmectoxial J emits ight —im_susjense_ doom elechare __S J —cusssert "pasted thnough st = ds She_fnond ease y thi babenticay et she bighe —maxctamiunmn gy |—_.imexfoxes anol —.san.ches a. J? 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