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Q1.Interpret the difference between ideal diode and practical
diode with the help of VI Characteristics?
Q2. How breakdown occur in diodes. Discuss two types of
breakdowns in diodes. Differentiate between Avalanche
Breakdown and Zener Breakdown.
Q3. A)Discuss the working principle of a'p-n junction diode using
neat diagram
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b) Draw the V-I characteristies of a p-n junction diode and label
it properly.
c) Illustrate with neat diagram the formation process of potential
barrier in a PN junction diode.
Q4. With the help of diagram explain PN Junction semiconductor
Diodes VI characteristic curve by including significance of
depletion layer, knee voltage, breakdown voltage, PIV and
Reverse saturation current
Contrast Knee Voltage with breakdown voltage.
Q5. Differentiate between Centre tapped, bridge, half wave
rectifier. Do the derivation as well.
Which one is more preferable half wave or full wave and why?Q6. Contrast half wave rectifier and full wave rectifier on the
ELM Uae Mei dCi a Ae
Q7. Sketch the zener Diode as Voltage Regulator.
Sketch the circuit diagram of a Voltage regulator and explain its
Mela nT:
Q8. Describe the behavior of Tunnel diode under forward bias
condition.
Q9. Describe the generation and recombination of majority and
minority carriers in semiconductor diodes in detail.
Q10. Define:
A. LED
1 rtosatoyad sae lexe(-y
C. Solar diode
D. Verastor.diode
E. Tunnel diodeDifference between Ideal diodes
and Practical diodes
Ideal diodes
Ideal diodes act as
perfect conductor and
perfect insulator.
Ideal diode draws no
current when reverse
biased.
Practical diodes
Practical diodes
cannot act as perfect
conductor and perfect
insulator.
Practical diode draws
very low current when
reverse biased.
Ideal diode offers
infinite resistance when
reverse biased.
It cannot be
manufactured.
It has zero cut-in
voltage.
Ideal diode has zero
voltage drops across its
junction when forward
biased.
Practical diode offers
very high resistance
when reverse biased.
It can be
manufactured.
It has very low cut-in
voltage.
It has very low voltage |
drop across it, when
forward biased. |CUE
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——MMors_onmPeneReverse saturation
current
Current that flows in reverse bias condition is called reverse saturation
current. Since this current is due to minority carriers and these number of
minority carriers are fixed at a given temperature therefore, the current is
almost constant known as reverse saturation current |-o.
Reverse saturation current (IS) of diode increases with increase in
the temperature the rise is 7%/°C for both germanium and silicon and
approximately doubles for every 10°C rise in temperature. Thus if we kept
the voltage constant, as we increase temperature the current increases.DSSS
Peak Inverse Voltage
(PIV)
Peak Inverse Voltage (PIV) or Peak Reverse Voltage (PRV) refer to
the maximum voltage a diode or other device can withstand in
the reverse- biased direction before breakdown. Also may be
called Reverse Breakdown Voltage.
What is the importance of peak inverse voltage?
PIV is the maximum peak voltage that a diode can withstand in
the reverse non-conducting region. By withstand, it means that,
upto this voltage the diode blocks conduction of current in the
reverse direction.Advantages &
Disadvantages
Advantages:~
- Half wave rectifier is a simple
circuit.
«It has a low cost.
-We can easy to use it.
+ We can easily construct.
-It has a low number of
component, therefore it is cheap.
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~The transfornpeputtilization factor is low.
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cycle of the input alternating voltage.
Ripple factor is high and elaborate filtering is,
therefore
Tequired to give steady de output.
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through the load in same direction for both
half cycle of input ac.
This can be achieved with two diodes
working alternatively.
For one half cycle one diode supplies current
to load and for next half cycle another diode
MeLCentre tap full wave
rectifier
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Full-wave Rectifier Output WaveformFull wave bridge
a nf Tel eo rectifier, four diodes are
arranged in the form of a bridge.
+ The main advantage of this bridge circuit is that it
does not require a special centre tapped
transformer.
4 The single secondary winding is connected to one
side of the diode bridge network and the load to
the other side.
Full Wave Bridge Rectifier
——>
Fig:~ Circuit diagram of Full Wave Bridge Rectifier.Half wave rectifier VS Fullwave rectifier
Particulars Half-wave Full-wave = Bridge
No. of diodes 1 2 4
Maximum efficiency 81.2%
vd.c. (no load) 2vm/n
Average current/diode id.c./2
Ripple factor 0.48
Peak Inverse Voltage (PIV) vm
Output frequency 2
Transformer utilisation factor
Form factor
Peak factorZener-Diode Voltage-Regulator Circuits
Sometimes, a circuit that produces constant output voltage while
operating from a variable supply voltage is needed. Such circuits are
called voltage regulator.
The Zener diode has a breakdown voltage equal to the desired output
voltage.
* The resistor limits the diode current to a safe value so that Zener diode
does not overheat.
Variable
supplyCarrier Generation and Recombination
Cartier generation is def ned as the process whereby electron and holes are created and recombination is
the process whereby electrons and holes are annihilated.
Boundeelectron = free electron + hole
Generation of carters (free electrons and holes)
The process by which free electrons and holes are generated in
pair is called generation of carriers.
When electrons in a valence band get enough energy, then
they will absorb this energy and jumps into the conduction
band. The electron which is jumped into a conduction band i
called free electron and the place from where electron left is
called hole. Likewise, two type of charge carriers (free electrons
and holes) gets generated.
Recombination of carriers (free electrons and holes)
The process by which free electrons and the holes get
eliminated is called recombination of carriers. When free
electron in the conduction band falls in to a hole in the valence
band, then the free electron and hole gets eliminated.
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|What is a Schottky Diode
A Schottky diode is a special type of diode, constructed using a metal-semniconductor junction instead of a p-
junction used in other diodes. Due to this, the voltage drop across a Schottky diode when it is conducting a
forward current (the “cut-in voltage") is small compared to normal diodes.
Cue ee iene
V (vats)
— 51 (Schottky)
— GaAs (Schottky)
The V- characteristics of Schottky diodes are very much similar to the PN junction diode. Current is the
dependent variable while voltage is the independent variable in the Schottky diode. The forward voltage
drop of the Schottky diode is low between 0.2 to 0.3 volts.
Working of a Schottky Diode
The operation relies on the principle that the electrons in different
materials have different potential energy.
-N-type semiconductors have higher potential energy than electrons
of metals.
When these two are brought into contact, there isa flow of electrons
in both directions across the metal-semiconductor interface.
Avvoltage is applied to the Schottky so that the metal is positive
when compared to the semiconductor.
The voltage opposes the built-in potential and makes the current
flow easy.
Potential energy
Potential energy is the
energy stored within an
object, due to the object's
Position, arrangement or
state
Potential energy is one of the
two main forms of energy,
along with kinetic energy.
Potential and Kinetic Energy
ofTunnel diode
A Tunnel diode is a heavily doped p-n junction diode in which the electric current decreases as the voltage
increases.
In tunnel diode, electric current is caused by “Tunneling”. The tunnel diode is used as a very fast switching device
in computers. It is also used in high-frequency oscillators and amplifiers.
1 ‘Anode Cathode
Petpet, _Neype
°
°
Tunnel diode symbol
Peak Point
ma.
— Forward current
I.
\V-l Characteristic of Tunnel DiodeVaractor Diode
Definition: The diode whose intemal capacitance varies with the variation of the reverse voltage such type of
diode is known as the Varactor diode. It is used for storing the charge. The varactor diode always works in
reverse bias, and it is a voltage-dependent semiconductor device
Depletion Region Anode Cathode
P-Region Y_N-Region 7
Diode Parallel Plate
® Capacitor
®
E +
Voltage
Depletion Region in a Reverse Blased P-N junction
eA
ang
Characteristic of Varactor Diode
The characteristic curve of the varactor diode is shown in the figure below. The graph shows that when the
reverse bias voltage increases the depletion region increases, and the capacitance of the diode reduces.
varactor diodes are advantageous as they are compact in (0)
size, economical, reliable and less prone to noise when,
compared to other diodes. Hence, they are used in
Tuning circuits to replace the old style variable capacitor
tuning of FM radio
2.Small remote control circuits ‘
3.Tank circuits of receiver or transmitter for auto-tuning
asin case of TV
4.Signal modulation and demodulation.
S.Microwave frequency multipliers as a component of LC
resonant circuit
6.Very low noise microwave parametric amplifiers Reverse Bias in Volts
7.AFC circuits —
8.Adjusting bridge circuits
S.Adjustable bandpass filters
1O.Voltage Controlled Oscillators (VCOs)
T.RF phase shifters
12.Frequency multipliers
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