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Lecture No. 3 (1)

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13 views

Lecture No. 3 (1)

Uploaded by

thetraderengineer62
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Lecture No.

Learning Goals:

 How to find Vrms, Vdc & Vac


 Review of Electronics Concepts
o Metal, Insulator and semiconductor
o Free charge carrier
o Doped Semiconductor
o Thermal Conduction
 Energy Band Theory
 Direct and indirect band gap
 Flow of charge carriers

3.1 How to find Vrms, Vdc & Vac

: tells the value of AC in equivalent DC. It can be find it by formula:

: It can be calculated by

: It is given by the formula:

√
Review of Electronics Concepts

3.2.1 Metal

In metal free charge carriers are carriers/ . These carriers can easily move and flow in
the metal. Current can easily flow due to these charge carriers.

3.2.2 Insulator

In insulator there is very small quantity of charge carriers ( carriers/ ). There is some
leakage current in insulators which is very small of ( to ) A.

3.2.3 Semiconductor

Semiconductor lies between metals and insulators (109 to 1012 carriers/cm3). There are no fixed
charge carriers in semiconductor. We can control these charge carriers by heat, magnetic field or
by light.

 Thermistors are controlled by heat.


 Hall Effect Sensors are controlled by magnetic field.
 Photo diodes are controlled by light.

3.2.4 Free charge carriers

There are two types of charge carriers.

i) Electrons
ii) Holes
All semiconductor materials have a fixed crystal lattice structure. The electrons
have a very easy way to move through this structure. Holes are fixed according to the structure
of crystal lattice of semiconductor. Electrons represent negative charge and holes present
positive charge. There is no positive charge in reality, positive charge represents the deficiency
of electrons, which shows that there was some electrons present at some time.
3.2.5 Thermal Conduction
The atom is in the rest at zero kelvins. It moves or vibrates at very high speed at 300 K (27 °C).
It is impossible to move an electron at zero kelvins because all atoms are at complete rest. At
room temperature when electron leaves the outer most shell and becomes free due to thermal
conduction. Deficiency of electrons shows positive charge. At room temperature the atom is in
equilibrium. The thermal conduction and recombination is same at room temperature. The
material has sufficient amount of energy at room temperature.
3.2.6 Doped Semiconductor
The amount of free charge carriers are not fixed at room temperature. They can be controlled by
the process of doping. The process of adding an impurity in semiconductor is called doping. The
impurity is added into semiconductor and has two types. There can be free electrons and holes
due to doping depending upon the impurity atom.
When boron is added as an impurity in silicon wafer then holes are free charge carriers in
majority and it is p-type material semiconductor. When phosphorous is added as an impurity in
silicon wafer then electrons are majority charge carriers and it is n-type material semiconductor.
3.3 Energy Band Theory
According to energy band theory there are three bands according to their energies. The
conduction band has highest energy level, valence band has lowest energy level and energy band
gap is
in between valence band and conduction band. There are no electrons in the energy band gap.
Silicon has an energy band gap of 1.4 electron volt while germanium 0.3 to 0.4 electron volt. In
metals the conduction band is overlapped with valence band.
In insulators the energy band gap is very high between conduction and valence band. In
semiconductor the energy band gap is very small between conduction and valence band.
3.4 Direct and indirect band gap
If electron jumps from valence band to conduction band just in one jump then it is called direct
band gap. If electron jumps from valence band to conduction band in two or more jumps then it
is called indirect band gap. Electron jumps from valence band to conduction band and when they
come back they emit energy in form of photons or light. LEDs are mostly made of gallium
arsenide as it has direct energy band gap. LEDs are not made of silicon due to indirect energy
band gap.
3.5 Flow of Charge Carriers
In a semiconductor, Charge carriers flow according to two mechanism which are as described
below:
i) Drift
ii) Diffusion
 Drift: If the charge carriers flow due to applied electric field (under the influence of
external applied force) then it is called drift.

 Diffusion: If the charges moves from high potential to low potential (under the influence
of concentration gradient) without any electric field applied then it is called diffusion.

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