Chapter ١

Introduction
١٫١ Power Electronic Switches

The modern age of power electronics began with the introduction of thyristors in the late ١٩٥٠s.
Now there are several types of power devices available for high-power and high-frequency applications.
The most notable power devices are gate turn-off thyristors, power Darlington transistors, power
MOSFETs, and insulated-gate bipolar transistors (IGBTs). Power semiconductor devices are the most
important functional elements in all power conversion applications. The power devices are mainly used as
switches to convert power from one form to another. They are used in motor control systems,
uninterrupted power supplies, high-voltage DC transmission, power supplies, induction heating, and in
many other power conversion applications.

1.2.1 The Power Diode

Among all the static switching devices used in power electronics (PE), the power diode is perhaps the
simplest. Its circuit symbol, shown in Fig. 1.1, is a two terminal device, and with terminal A known as the
anode and terminal K known as the cathode. If terminal A experiences a higher potential compared to
terminal K, the device is said to be forward biased and a forward current (IF ) will flow through the device
in the direction as shown. This causes a small voltage drop across the device (<1 V), which under ideal
conditions is usually ignored. By contrast, when a diode is reverse biased, it does not conduct and the
diode then experiences a small current flowing in the reverse direction called the leakage current. Both
forward voltage drop and leakage current are ignored in an ideal diode. In PE applications a diode is
usually considered to be an ideal static switch. The characteristics of a practical diode depart from the
ideals of zero forward and infinite reverse impedance, as shown in Fig. 1.2.

FIGURE ١٫١ Symbol of power diode

FIGURE 1.2 Typical static characteristic of a power diode

١٫٢٫٢ The snubber circuit

Snubber circuits are essential for diodes used in switching circuits. It can save a diode from over voltage
spikes, which may arise during the reverse recovery process. A very common snubber circuit for a power
diode consists of a capacitor and a resistor connected in parallel with the diode. It used to reduce dv/dt

1.3 Thyristors

The thyristor, also called a silicon-controlled rectifier (SCR), is basically a four-layer three-junction
pnpn device. It has three terminals: anode, cathode, and gate. The device is turned on by applying a short
pulse across the gate and cathode. Once the device turns on, the gate loses its control to turn off the
device.The turn-off is achieved by applying a reverse voltage across the anode and cathode. The thyristor
symbol is shown in Fig. 1.3. There are basically two classifications of thyristors: converter grade and
inverter grade. The difference between a converter-grade and an inverter grade thyristor is the low turn-
off time (on the order of a few microseconds) for the latter. The converter grade thyristors are slow type
and are used in natural commutation (or phase-controlled) applications.

FIGURE 1.3 Thyristor symbol

1.4 Power MOSFET

Power MOSFETs are marketed by different manufacturers with differences in internal geometry and with
different names such as MegaMOS, HEXFET, SIPMOS, and TMOS. They have unique features that
make them potentially attractive for switching applications. They are essentially voltage-driven rather
than current-driven devices, unlike bipolar transistors. The gate of a MOSFET is isolated electrically from
the source by a layer of silicon oxide. The gate draws only a minute leakage current on the order of nano
amperes. Hence, the gate drive circuit is simple and power loss in the gate control circuit is practically
negligible. Although in steady state the gate draws virtually no current, this is not so under transient
conditions. The gate-to-source and gate-to-drain capacitances have to be charged and discharged
appropriately to obtain the desired switching speed, and the drive circuit must have a sufficiently low
output impedance to supply the required charging and discharging currents. The circuit symbol of a
power MOSFET is shown in Fig. 1.4. Power MOSFETs are majority carrier devices, and there is no
minority carrier storage time. Hence, they have exceptionally fast rise and fall times. They are essentially
resistive devices when turned on, while bipolar transistors present a more or less constant VCE(sat)
over the normal operating range. Power dissipation in MOSFETs is Id2RDS(on)
, and in bipolars it is ICVCE(sat) . At low currents, therefore, a power MOSFET may have a lower
conduction loss than a comparable bipolar device, but at higher currents, the conduction loss will exceed
that of bipolars. Also, the RDS(on)increases with temperature. An important feature of a power MOSFET
is the absence of a secondary breakdown effect, which is present in a bipolar transistor, and as a result, it
has an extremely rugged switching performance. In MOSFETs, RDS (on) increases with temperature, and
thus the current is automatically diverted away from the hot spot. The drain body junction appears as an
anti parallel diode between source and drain. Thus, power MOSFETs will not support voltage in the
reverse direction. Although this inverse diode is relatively fast, it is slow by comparison with the
MOSFET. Recent devices have the diode recovery time as low as 100 ns. Since MOSFETs cannot be
protected by fuses, an electronic protection technique has to be used. With the advancement in MOS
technology, ruggedized MOSFETs are replacing the conventional MOSFETs. The need to ruggedize
power MOSFETs is related to device reliability. If a MOSFET is operating within its specification range
at all times, its chances for failing catastrophically are minimal. However, if its absolute maximum rating
is exceeded, failure probability increases dramatically. Under actual operating conditions, a MOSFET
may be subjected to transients—either externally from the power bus supplying the circuit or from the
circuit itself due, for example, to inductive kicks going beyond the absolute maximum ratings. Such
conditions are likely in almost every application, and in most cases are beyond a designer’s control.
Rugged devices are made to be more tolerant for over voltage transients. Ruggedness is the ability of a
MOSFET to operate in an environment of dynamic electrical stresses, without activating any of the
parasitic bipolar junction transistors. The rugged device can withstand higher levels of diode recovery
dv/dt and static dv/dt.

FIGURE 1.4 Power MOSFET circuit symbol.

1.5 Insulated-Gate Bipolar Transistor (IGBT)

The IGBT has the high input impedance and high-speed characteristics of a MOSFET with the
conductivity characteristic (low saturation voltage) of a bipolar transistor. The IGBT is turned on by
applying a positive voltage between the gate and emitter and, as in the MOSFET, it is turned off by
making the gate signal zero or slightly negative. The IGBT has a much lower voltage drop than a
MOSFET of similar ratings. The structure of an IGBT is more like a thyristor and MOSFET. For a given
IGBT, there is a critical value of collector current that will cause a large enough voltage drop to activate
the thyristor. Hence, the device manufacturer specifies the peak allowable collector current that can flow
without latch-up occurring. There is also a corresponding gate source voltage that permits this current to
flow that should not be exceeded. Like the power MOSFET, the IGBT does not exhibit the secondary
breakdown phenomenon common to bipolar transistors. However, care should be taken not to exceed the
maximum power dissipation and specified maximum junction temperature of the device under all
conditions for guaranteed reliable operation. The on-state voltage of the IGBT is heavily dependent on the
gate voltage. To obtain a low on-state voltage, a sufficiently high gate voltage must be applied.
In general, IGBTs can be classified as punch-through (PT) and non punch-through (NPT) structures, as
shown in Fig. 1.5. In the PT IGBT, an N + buffer layer is normally introduced between the P+ substrate
and the N− epitaxial layer, so that the whole N− drift region is depleted when the device is blocking the
off-state voltage, and the electrical field shape inside the N− drift region is close to a rectangular shape.
Because a shorter N− region can be used in the punch-through IGBT, a better trade-off between the
forward voltage drop and turn-off time can be achieved. PT IGBTs are available up to about 1200 V.
High-voltage IGBTs are realized through a non punch-through process. The devices are built on an N−
wafer substrate which serves as the N− base drift region. Experimental NPT IGBTs of up to about 4 kV
have been reported in the literature. NPT IGBTs are more robust than PT IGBTs, particularly under short
circuit conditions. But NPT IGBTs have a higher forward voltage drop than the PT IGBTs. The PT
IGBTs cannot be as easily paralleled as MOSFETs. The factors that inhibit current sharing of parallel-
connected IGBTs are (1) on-state current unbalance, caused by VCE (sat) distribution and main
circuit wiring resistance distribution, and (2) current unbalance at turn-on and turn-off, caused by the
switching time difference of the parallel connected devices and circuit wiring inductance distribution.
The NPT IGBTs can be paralleled because of their positive temperature coefficient property.

FIGURE 1.5 (a) Non punch-through IGBT, (b) punch-through IGBT, (c) IGBT equivalent circuit
1.6 π-Directional Switches

The ac-ac voltage controller is composed of four diodes and one MOSFET as shown in fig ١٫٦.
This connection called bidirectional switches, it is connect between ac supply and load. This switches can
be conducting if D١ and D٢ are conduct (ON-state), so the current flow from supply passing to D١,
MOSFET and D٢ then go to the load.

FIGURE 1.6 π-Directional Switches

1.7 Three phase induction motor

The greatest number of electrical motors manufactured are induction motors. They range from small
fractional horse power (h.p) motors to large machines. The cheap robust construction and shunt motor
characteristics of induction motor (IM), far outweigh its relatively poor efficiency and power factor in
comparison with, for example, the synchronous motor. In size, IM range from tiny fractional h.p. single
phase machines used for power record players, fans, pumps and domestic appliances, to large three-phase
motors rated at thousands of h.p.

The speed of IM is nearly constant dropping only few percent from no load to full load. The main
disadvantages of IMs are:
- Speed is not easily controlled.
- Starting current may be five to eight times full load current.
- Power factor is low and lagging when the machine is lightly loaded.
Like all electrical machines, the induction motor consists of a stator and rotor. The stator of a 3 phase
induction motor is built up of sheet steel laminations insulated from each other. Slots are punched out on
the inner prephery of the stator laminations. 3 phase armature winding is assembled in these slots. This
represents the primary winding of the machine and is to be connected to a 3 phase balanced supply.

Induction machine rotors are of two types: wound and squirrel-cage. In either case, the rotor windings are
contained in slots in a laminated iron core. The core is then connected to the shaft through a spider. The
winding of a wound rotor machine is a 3 phase winding consisting of coils placed in slots in the rotor
cors. It is quite similar to the stator winding. It is always three-phase and connected in Y. the three
terminal leads are brought to slip rings, mounted on the shaft. Carbon brushes riding on these slip rings
are shorted together for normal operation. Wound rotors are used only for large machines when special
torque speed characteristics are needed. External resistances can be inserted into the rotor circuit via the
brushes to improve starting torque. As the motor accelerates. These resistances should be gradually
reduced to zero.

Squirrel cage rotor windings consist of solid bars of conducting material in the rotor slots. These bars are
shorted together at the two ends of the rotor by end rings. In large machines, the bars may be copper alloy
driven into the slots. Rotors up to 50 cm in diameter have usually die cast aluminum bars.

When a three-phase supply is connected to a three-phase stator winding, a rotating field is produced
which rotates at a synchronous speed, Ns. Ns is given by
Ns = f/p x 60
Where f is the supply frequency and P is the number of pole pairs .
Under normal operating conditions, the motor will run at some speed N slightly less than the
synchronous, speed. N is related to the synchronous speed by the equation.
N = (1 – s) Ns
Where S is a fraction known as the slip and is given by:
S = (Ns-N) / Ns
Many methods are available for starting three phase induction motors, among of which are:
١- Reduction of supply voltage.
٢- Adding reactions or resistors in series with the stator windings.
٣- Adding resistors in series with the rotor windings. This is suitable only for wound rotor motors.
٤- Y/∆ switch. This is suitable for motors designed to operate normally as ∆ connected.

One of the disadvantages of 3 phase induction motors is the difficulty of exerting effective economical
wide range speed control on them. The available techniques in this respect are:
١- Adding resistances in the rotor circuit.
٢- Variation of frequency.
٣- Pole changing.
٤- Variation of voltage magnitude.
1.8 Parallel Port

PC PORTS

Parallel Port Keyboard Serial Port Game Port

• We usually use PC in houses, offices, banks and companies for performing many applications
which conclude arithmetic and logic operations .Also PC can control motors in factory or check
transistor and determine its kind and its gain or PC can measure the frequency of signal.

• In brief we can use PC to interface and control peripheral device such as electronic circuit and
access data received from it The PC can exchange data with the peripheral device connected to it
through interface circuitry known as port.

• That port performs the same function as a sea port or airport for a city. Data bits are moved in or
out of the PC in the same way as people and goods are moved in or out of the sea port or airport

PC Parallel port is 25 pin D- shaped female connector in the back of the computer

• The peripheral device (electronic circuit) is physically connected to the port by cable consists of
25 wire in common , this cable is terminated by 25 way male D-type connector at the side of the
computer which plug the female connector of the port on PC

Parallel port is normally used for:

١. Connecting Computer to the Printer

٢. Also used as an I/O channel for Connecting your own circuit to PC

Parallel Port Assignment

• Parallel port is 25 pins or lines classified into three separate ports as follow:
Data port:
• 8 out put pins from pin 2 to pin 9 (D0-----D7)
• D0 is the LSB
• D7 is the MSB
• USED TO OUTPUT DATA BITS FROM PC TO PERIPHERAL
Status port:
• 5 input pins from pin 10 to pin 13 (S3-----S7)
• It is used to input the data from peripheral device to the PC .
Control port:
• 4 out put pins (1, 14, 16, 17)
• Pin 1 ------ C0
• Pin 17 ------ C3
• Pin 14 ------ C1
• Pin 16 ------ C2
• The remaining 8 lines are grounded.
Comments on Parallel Assignment:
• The three ports are controlled separately.
• Parallel port pins are TTL level ,this mean that they out put
(0V) when they are in low logic level (0) when in high logic level (1).
• Parallel port pins are TTL level ,this mean that they out put
• (0V) when they are in low logic level (0) when in high logic level (1).
• Not all 25 pins are needed always
How to control output states of parallel port:
• When writing data (send data from PC to peripheral device) that mean you control the state of
every pin of out put port that data transfer in binary form such as 10110010.
• In soft ware you can do that only by writing value to the port which we set to all 8 lines
simultaneously.
• The value is written in the form ordinary decimal number from(0 : 255)

The value is written in the form ordinary decimal number from (0: 255) as follow:

Line D7 D6 D5 D4 D3 D2 D1 D0

Value 128 64 32 16 8 4 2 1

• These values are the values needed to set each output (pin) high.
Chapter-٢

Proposed System
The proposed system consists of six bidirectional switches as shown in fig ٢٫١. Three in series with
supply terminals and the rest of them are used to provide freewheeling path for the stored energy in the
motor winding. In this study different switching strategies have been used to evaluate the different
performance parameters of the three phase induction motor. These strategies namely Phase Angle control,
(PAC), Symmetric Angle control, (SAC), Extinction Angle control, (EAC).
It is required to provide a dead beat time in each transition between any series and shunt switches to
avoid sudden short circuits or voltage and current spikes. This can be achieved by using a capacitor in
parallel with each shunt switch. A bleeding resistor is used to bleed the stored energy in the shunt
capacitor.

FIGURE 2.1 System under study

2.1 Mathematical Models for Different Switching Strategies

In any control strategy, the relation between the machine phase voltage and input voltage can be
expressed as: vr (ωt ) = S1 (ωt ) * vs (ωt ) (1)
Where, S1 (ωt ) is the switching function and vr (ωt ) , vs (ωt ) are the motor terminal and supply phase
voltages respectively.
2.2 Phase Angle Control (PAC)
PAC is carried out by varying the angle α as shown in Fig.2.2. The series switch is in OFF state
between 0 < ωt < α , in the same time the shunt switch is ON. The switching state will reversed in the
time α < ωt < π . The switching state in the negative half cycle of supply voltage is same as in positive half
cycle. So the frequency of the switching function is twice the supply frequency. The fundamental
component of the voltage at the terminal of the motor, Vr1 is inversely proportional with the value of α .
Continuous time varying for the motor terminal voltage can be obtained by using Fourier transform in the
switching function then substituting the results into (1). A detailed derivation of Fourier transform of the
output voltage of PAC is shown in the Appendix.
The time variation of fundamental component of motor voltage is shown in the following equation:
Vm (π − α )  α  V sin α  α
vr1 (ωt ) = sin  ωt +  + m sin  ωt − 
π  2 π  2
Then, the rms component of fundamental component of motor voltage is shown in the following
equation:
Vm
sin 2 (α ) + (π − α ) + (π − α )sin (2α )
2
V1 =
2π (2)
α  α   π − α + sin α 
The angle of V1 with respect to supply voltage is φ1 where φ1 = tan −1  + tan  *   (3)
2  2   π − α − sin α 

S1

γ γ
VS α π π +α 2π
γ

π +α 2π
α π ωt
γ

FIGURE 2.2 Motor-terminal voltage and switching function of series switch, S1 in case of PAC.
2.3 Extinction Angle Control (EAC)
EAC is carried out by varying the conduction angle γ as shown in Fig2..3. The series switch is in ON
state between 0 < ωt < γ , in the same time the shunt switch is OF. The switching state will reversed in the
time γ < ωt < π . The switching state in the negative half cycle of supply voltage is same as in positive
half cycle. So, the frequency of the switching function is twice the supply frequency. The fundamental
component of the voltage at the terminal of the motor, Vr1 , is inversely proportional to the value of
angle α .
Vm γ  α V    α  α   sin 2α   α  α   sin 3α   α  α  
v r (t ) = sin  ωt −  − m sin α *  sin  3ωt −  − sin  ωt +   + *  sin  5ωt −  − sin  3ωt +   + *  sin  7ωt −  − sin  5ωt +   + ..... 
π  2 π    2   2  2   2   2  3   2   2  
Vm (π − α )  α  V sin α  α (4)
vr1 (t ) = sin  ωt −  + m sin  ωt + 
π  2 π  2
Vm
Vr1 = sin 2 (α ) + (π − α )2 + (π − α )sin (2α )
2π
 α α π − α + sinα 
The angle of Vr1 with respect to supply voltage is φ1 where φ1 = tan−1 − − tan  *   (5)
 2  2   π − α − sinα 

S2

γ γ
π π +γ
VS α
γ

π π +γ ωt
2π

FIGURE 2.3 Motor-terminal voltage and switching function of series switch, S 2 in case of EAC.
2.4 Symmetrical Angle Control (SAC)
SAC is carried out by varying the conduction angle γ as shown in Fig.2.4. The series switch is in OFF
state in the following periods 0 < ωt < α / 2 and π − α / 2 < ωt < π , in the same time the shunt switch is ON.
The series switch is in ON state in the period α / 2 < ωt < π − α / 2 in the same time the shunt switch is
OFF. The switching state in the positive half cycle of supply voltage will be same as in negative half
cycle. So the frequency of the switching function is twice the supply frequency. The fundamental
component of the voltage at the terminal of the machine Vr1 is inversely proportional with the value of
angle α .
The continuous time varying phase a voltage of SAC can be obtained by using Fourier transform of
switching function, S3 and using the results in (1) as shown in the Appendix.
Vmγ Vm  sin 2α sin 3α 
vr (ωt ) = sin (ωt ) − sin α * (sin (3ωt ) − sin (ωt )) + * (sin (5ωt ) − sin (3ωt )) + * (sin (7ωt ) − sin (5ωt )) + .....
π π  2 3 
The time varying of fundamental component of motor phase voltage, vr1 (ωt )
V (π − α ) V sin α V
vr1 (ωt ) = m sin (ωt ) + m sin (ωt ) ⇒ vr1 (t ) = m [(π − α ) + sin (α )]sin (ωt ) (6)
π π π

S3

γ γ ωt
α /2 β π π +α /2 π +β
VS

π +α /2 π +β ωt
α /2 β π 2π
γ
γ

FIGURE 2.4 Motor-terminal voltage and switching function of series switch, S3 in case of SAC.
Chapter-٣

Computer Simulation
The simulation of the ac voltage regulator for different strategies has been carried out by using PSIM
computer program the induction motor used in the study is
Its parameters are shown in Table (1).
Table (1) the induction motor parameters:
∆ Y 220/380V 5/2.9
1KW cosφ 0.71
-1
1700 min 60 Hz

3.1 Circuit Diagram:

FIGURE 3.1 Circuit for start up the squrail cage induction motor
٣٫٢ Simulation Results:

• FIGURE 3.2 Speed variation of the induction motor with OFF-Angle α for SAC, EAC, PAC.
• FIGURE 3.3 Displacement Factor variations with OFF-Angle α for SAC, EAC, PAC.
• FIGURE 3.4 Power Factor variations with OFF-Angle α for SAC, EAC, PAC.
• FIGURE 3.5 THD of the supply variation with OFF-Angle α for SAC, EAC, PAC.
• FIGURE 3.6 THD of the machine variation with OFF-Angle α for SAC, EAC, PAC.
• FIGURE 3.7 the efficiency of the system variation with OFF-Angle α for SAC, EAC, PAC.
• FIGURE 3.8 THD of supply current variation with speed for SAC, EAC, PAC.
• FIGURE 3.9 THD of machine current variation with speed for SAC, EAC, PAC.
• FIGURE 3.10 Displacement Factor variations with speed for SAC, EAC, PAC.
• FIGURE 3.11 Power Factor variations with speed for SAC, EAC, PAC.
• FIGURE 3.12 shown the source voltage for α=30 at no load
• FIGURE 3.13 shown the signal voltage for α=30 at no load
• FIGURE 3.14 shown the machine voltage for α=30 at T=2.5
• FIGURE 3.15 shown the source voltage for α=30 at T=2.5
• FIGURE 3.16 shown the signal voltage for α=30 at T=2.5
• FIGURE 3.17 shown the source current for α=30 at T=2.5
• FIGURE 3.18 shown the machine current for α=30 at T=2.5
• FIGURE 3.19 shown the machine voltage for α=30 at T=5
• FIGURE 3.20 shown the source voltage for α=30 at T=5
• FIGURE 3.21 shown the signal voltage for α=30 at T=5
• FIGURE 3.22 shown the source current for α=30 at T=5
• FIGURE 3.23 shown the machine current for α=30 at T=5
• FIGURE 3.24 shown the machine voltage for α=20 at T=5
• FIGURE 3.25 shown the source voltage for α=20 at T=5
• FIGURE 3.26 shown the signal voltage for α=20 at T=5
• FIGURE 3.27 shown the source current for α=20 at T=5
• FIGURE 3.28 shown the machine current for α=20 at T=5
• FIGURE 3.29 shown the speed for α=20 at T=5
• FIGURE 3.30 shown the machine voltage for α=40 at T=5
• FIGURE 3.31 shown the supply voltage for α=40 at T=5
• FIGURE 3.32 shown the signal voltage for α=40 at T=5
• FIGURE 3.33 shown the source current for α=40 at T=5
• FIGURE 3.34 shown the machine current for α=40 at T=5
• FIGURE 3.35 shown the speed for α=40 at T=5
• FIGURE 3.36 shown the machine voltage for α=60 at T=5
• FIGURE 3.37 shown the source voltage for α=60 at T=5
• FIGURE 3.38 shown the signal voltage for α=60 at T=5
• FIGURE 3.39 shown the supply current for α=60 at T=5
• FIGURE 3.40 shown the machine current for α=60 at T=5
• FIGURE 3.41 shown the speed for α=60 at T=5
 1

0.98

0.96
S peed (pu)

0.94

0.92

0.9 SAC
EAC
0.88
PAC
0.86
0 20 40 60 80 100 120 140 160
OFF-Angle

FIGURE 3.2 Speed variation of the induction motor with OFF-Angle α for SAC, EAC, PAC

1.2

1
D isp lacm en t F acto r

0.8

0.6

SAC
0.4
PAC
0.2 EAC

0
0 20 40 60 80 100 120 140 160
OFF-angle

FIGURE 3.3 Displacement Factor variation with OFF-Angle α for SAC, EAC, PAC
 0.8
0.7
0.6
PowerFactor

0.5

0.4
0.3 SAC
PAC
0.2
EAC
0.1
0
0 20 40 60 80 100 120 140 160
OFF-angle

FIGURE 3.4 Power Factor variation with OFF-Angle α for SAC, EAC, PAC

100
90
80
70
THD at supply

60
50
40 SAC
30 PAC
20 EAC
10
0
0 20 40 60 80 100 120 140 160
OFF-angle

FIGURE 3.5 THD of the supply variation with OFF-Angle α for SAC, EAC, PAC
 45
40
35
THD at machine

30
25
20
SAC
15
PAC
10
EAC
5
0
0 20 40 60 80 100 120 140 160
OFF-angle

FIGURE 3.6 THD of the machine variation with OFF-Angle α for SAC, EAC, PAC

0.9
0.8
0.7
0.6
Effeciency

0.5
0.4 SAC
0.3 PAC
EAC
0.2
0.1
0
0 20 40 60 80 100 120 140 160
OFF-Angle

FIGURE 3.7 The efficiency of the system variation with OFF-Angle α for SAC, EAC, PAC
 100
90
80
70
THD at supply

60 SAC
50 PAC
40 EAC
30
20
10
0
0.88 0.9 0.92 0.94 0.96 0.98 1
Speed (pu)

FIGURE 3.8 THD of supply current variation with speed for SAC, EAC, PAC

45
40
35
THD at machine

30
25
20
SAC
15
PAC
10
EAC
5
0
0.88 0.9 0.92 0.94 0.96 0.98 1
Speed (pu)

FIGURE 3.5 THD of machine current variation with speed for SAC, EAC, PAC
 1.2

Displacment Factor 1

0.8
SAC
0.6 PAC
EAC
0.4

0.2

0
0.88 0.9 0.92 0.94 0.96 0.98 1
Speed (pu)

FIGURE 3.9
Displacement Factor variations with speed for SAC, EAC, PAC

0.8
0.7
0.6
Power Factor

0.5

0.4
0.3
SAC
0.2
PAC
0.1
EAC
0
0.88 0.9 0.92 0.94 0.96 0.98 1
Speed (pu)

FIGURE 3.10 Power Factor variations with speed for SAC, EAC, PAC
٣٫٢٫١ for Phase Angle Control

FIGURE ٣٫١١ shown the machine voltage for α=٣٠ at no load

FIGURE ٣٫١٢ shown the source voltage for α=٣٠ at no load

FIGURE ٣٫١٣ shown the signal voltage for α=٣٠ at no load

FIGURE ٣٫١٤ shown the machine voltage for α=٣٠ at T=٢٫٥

FIGURE ٣٫١٥ shown the source voltage for α=٣٠ at T=٢٫٥

FIGURE ٣٫١٦ shown the signal voltage for α=٣٠ at T=٢٫٥

FIGURE ٣٫١٧ shown the source current for α=٣٠ at T=٢٫٥

FIGURE ٣٫١٨ shown the machine current for α=٣٠ at T=٢٫٥

FIGURE ٣٫١٩ shown the machine voltage for α=٣٠ at T=٥

FIGURE ٣٫٢٠ shown the source voltage for α=٣٠ at T=٥

FIGURE ٣٫٢١ shown the signal voltage for α=٣٠ at T=٥

FIGURE ٣٫٢٢ shown the source current for α=٣٠ at T=٥

FIGURE ٣٫٢٣ shown the machine current for α=٣٠ at T=٥

FIGURE ٣٫٢٤ shown the machine voltage for α=٢٠ at T=٥

FIGURE ٣٫٢٥ shown the source voltage for α=٢٠ at T=٥

FIGURE ٣٫٢٦ shown the signal voltage for α=٢٠ at T=٥

FIGURE ٣٫٢٧ shown the source current for α=٢٠ at T=٥

FIGURE ٣٫٢٨ shown the machine current for α=٢٠ at T=٥

FIGURE ٣٫٢٩ shown the speed for α=٢٠ at T=٥

FIGURE ٣٫٣٠ shown the machine voltage for α=٤٠ at T=٥

FIGURE ٣٫٣١ shown the supply voltage for α=٤٠ at T=٥

FIGURE ٣٫٣٢ shown the signal voltage for α=٤٠ at T=٥

FIGURE ٣٫٣٣ shown the source current for α=٤٠ at T=٥

FIGURE ٣٫٣٤ shown the machine current for α=٤٠ at T=٥

FIGURE ٣٫٣٥ shown the speed for α=٤٠ at T=٥

FIGURE ٣٫٣٦ shown the machine voltage for α=٦٠ at T=٥

FIGURE ٣٫٣٧ shown the source voltage for α=٦٠ at T=٥

FIGURE ٣٫٣٨ shown the signal voltage for α=٦٠ at T=٥

FIGURE ٣٫٣٩ shown the supply current for α=٦٠ at T=٥

 FIGURE ٣٫٤٠ shown the machine current for α=٦٠ at T=٥

FIGURE ٣٫٤١ shown the speed for α=٦٠ at T=٥

٣٫٢٫٢ for Extinction Angle Control

٣٫٢٫٣ for Symmetrical Angle Control

Chapter-٤

Experimental Work

4.1 Built the circuit

The implementation the of the three phase induction motor system has been done in library, when the

motor is connect to grid by ac voltage controller. The ac voltage controller is built in laboratory using

direct components. Also all auxiliary circuit which were used for operation and control such as power

supply, zero crossing detector, optocabller, regulator ( ) and driving circuit were built in laboratory. We

use MOSFET ( ) as switch, also we use PC with parallel port and high level language programmed to

generate the pulses which are incoming to switches. We use optocabller to separate the control circuit

than power circuit .Finally, to record the waves form we use oscilloscope.
4.2 Experimental Results

FIGURE 4.1 Shown the phase voltage Va and source current for phase( A ) Isa

FIGURE 4.2 Shown the phase voltage Va and current switch for phase-a Iswitch a
FIGURE 4.3 Shown the phase voltage Va and machine current for phase-a Imach. a

FIGURE 4.4 Shown the phase voltage Va and phase voltage Vc

 FIGURE ٤٫٥ Shown the phase voltage Va and phase voltage Vb

FIGURE ٤٫٦ Shown the pulse for phase A and A\ before optocopller
FIGURE 4.7 Shown the pulse for phase A and B before optocopller

FIGURE 4.8 Shown the pulse for phase A and C before optocopller
 FIGURE 4.9 Shown the pulse for phase A before optocopller and after it.

FIGURE 4.10 Shown the voltage for phase A and pulse for phase A after optocopller.
 FIGURE 4.11 Shown the pulse for phase A and A\ after optocopller

FIGURE 4.12 Shown the pulse for phase A and phase B after optocopller
FIGURE 4.13 Shown the pulse for phase A and phase C after optocopller