Three Phase PSD 125 IdAVM = 166 A

Rectifier Bridges VRRM = 800-1800 V

Preliminary Data Sheet

VRSM VRRM Type

V V
800 800 PSD 125/08
1200 1200 PSD 125/12 ~
1400 1400 PSD 125/14 ~
1600 1600 PSD 125/16 ~
1800 1800 PSD 125/18

Symbol Test Conditions Maximum Ratings Features

IdAVM TC = 85°C, module 166 A • Package with screw terminals
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A • Isolation voltage 3000 V∼
VR = 0 t = 8.3 ms (60 Hz), sine 1950 A • Planar glasspassivated chips
TVJ = TVJM t = 10 ms (50 Hz), sine 1600 A • Blocking voltage up to 1800 V
VR = 0 t = 8.3 ms (60 Hz), sine 1800 A
• Low forward voltage drop
• UL registered E 148688
∫ i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 16200 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 16000 A2 s Applications
TVJ = TVJM t = 10 ms (50 Hz), sine 12800 A2 s • Supplies for DC power equipment
VR = 0 t = 8.3 ms (60 Hz), sine 13600 A2 s • Input rectifiers for PWM inverter
TVJ -40 ... + 150 °C • Battery DC power supplies
TVJM 150 °C • Field supply for DC motors
Tstg -40 ... + 150 °C
Advantages
VISOL 50/60 HZ, RMS t = 1 min 2500 V∼ • Easy to mount with two screws
IISOL ≤ 1 mA t=1s 3000 V∼ • Space and weight savings
Md Mounting torque (M5) 5 Nm • Improved temperature and power
Terminal connection torque (M5) 5 Nm cycling capability
Weight typ. 240 g
Package, style and outline
Dimensions in mm (1mm = 0.0394“)

Symbol Test Conditions Characteristic Value

IR VR = VRRM TVJ = 25°C ≤ 0.3 mA
VR = VRRM TVJ = TVJM ≤ 8.0 mA
VF IF = 150 A TVJ = 25°C ≤ 1.3 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 3 mΩ
RthJC per diode; DC current 0.83 K/W
per module 0.138 K/W
RthJK per diode; DC current 1.13 K/W
per module 0.188 K/W
dS Creeping distance on surface 14 mm
dA Creeping distance in air 14 mm
a Max. allowable acceleration 50 m/s2

POWERSEM GmbH, Walpersdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 PSD 125

5
IF(OV) 10
200 ------
IFSM
IFSM (A) 2
As
A TVJ=45°C TVJ=150°C
1.6 1800 1600
160

T=150°C 1.4

120 4
TVJ=45°C
1.2 10

TVJ=150°C
1
80
0 VRRM

0.8
1/2 VRRM
40
T=25°C 0.6 1 VRRM
IF 3
10
0.4 1 2 4 6 10
0 0 1 2 3 t [ms]
VF 1 1.5 V 10 10 t[ms] 10 10

Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 ∫i2dt versus time
voltage drop per diode per diode IFSM: Crest value. (1-10ms) per diode (or thyristor)
t: duration
65
600 TC
70
[W] PSD 125 200
0.07 0.03 = RTHCA [K/W] 75
DC
500 0.11 80 [A] sin.180°
85
rec.120°
90 rec.60°
150
400 95 rec.30°
0.2
100
105
300 110 100

0.36 115
120
200 DC 125
50
sin.180° 130
0.86
100 rec.120° 135
IdAV
rec.60° 140

rec.30° 145 0
PVTOT °C 50 100 150 200
0 150
TC(°C)
25 75 125 175 0 50 100 150
IFAVM [A] Tamb [K]

Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature at case temperature

K/W

1.2 Z thJK

1
Z thJC
0.8

0.6

0.4

0.2
Z th

0.01 0.1 1 10
t[s]

Fig. 6 Transient thermal impedance per diode (or thyristor),

calculated

POWERSEM GmbH, Walpersdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20