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R1_ Zener diode

R1 zener diode electronics

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0% found this document useful (0 votes)
12 views

R1_ Zener diode

R1 zener diode electronics

Uploaded by

divyanshsengar5
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Outline

➢Objective
➢Zener diode
➢Learning outcomes
➢References
Course Objective

➢To make students familiar with Zener diode


Zener diode

➢A Zener diode is a silicon semiconductor device that permits current to


flow in either a forward or reverse direction.
➢The diode consists of a special, heavily doped p-n junction, designed to
conduct in the reverse direction when a certain specified voltage is
reached.
➢The Zener diode has a well-defined reverse-breakdown voltage, at
which it starts conducting current, and continues operating continuously in
the reverse-bias mode without getting damaged.
Zener diode

➢Additionally, the voltage drop across the diode remains constant over a
wide range of voltages, a feature that makes Zener diodes suitable for use
in voltage regulation.
Zener diode operation

➢The Zener diode operates just like the normal diode when in the
forward-bias mode, and has a turn-on voltage of between 0.3 and 0.7 V.
➢However, when connected in the reverse mode, which is usual in most
of its applications, a small leakage current may flow.
➢As the reverse voltage increases to the predetermined breakdown
voltage (Vz), a current starts flowing through the diode.
➢The current increases to a maximum, which is determined by the series
resistor, after which it stabilizes and remains constant over a wide range of
applied voltage.
Zener diode operation

Zener diode equivalents for the (a) “on” and (b) “off” states.
Zener diode characteristics
Zener breakdown
➢The breakdown is either due to the Zener breakdown effect that occurs
below 5.5 V, or impact ionization that occurs above 5.5 V.
➢Both mechanisms result in the same behavior and do not require
different circuitry; however, each mechanism has a different temperature
coefficient.
➢The Zener effect has a negative temperature coefficient while the impact
effect experiences a positive coefficient.
➢The two temperature effects are almost equal at 5.5 V and cancel out
each other to make the Zener diodes rated at around 5.5 V the most stable
over a wide range of temperature conditions.
Zener diode specifications
➢Zener diodes vary in specifications such as nominal working voltage,
power dissipation, maximum reverse current, and packaging. Some
commonly used specifications include:
➢Voltage Vz: The Zener voltage refers to the reverse breakdown
voltage—2.4 V to about 200 V; can go up to 1 kV while the maximum for
the surface-mounted device (SMD) is about 47 V).
➢Current Iz (max.): Maximum current at the rated Zener voltage Vz—200
uA to 200 A).
➢Current Iz (min.): Minimum current required for the diode to break
down—5 mA and 10 mA.
Zener diode specifications
➢Power rating: The maximum power the Zener diode can dissipate; given
by the product of voltage across the diode and the current flowing
through. Typical values are 400 mW, 500 mW, 1 W, and 5 W; for surface
mounted, 200 mW, 350 mW, 500 mW, and 1 W are typical.
➢Voltage tolerance: Typically ±5%.
➢Temperature stability: Diodes around 5 V have the best stability.
➢Package: Leaded devices and the surface mount either as discrete
devices or within integrated circuits.
➢Zener resistance (Rz): The diode exhibits some resistance as evident
from the IV characteristics.
Applications
➢Voltage Regulator or Stabilizer
➢As a Meter Protector
➢As a Wave-Shaper.
Students Learning Outcomes
➢Students will be Familiar with zener diode
References

T1. Boylestad & Nashelsky, “Electronics Devices and Circuit Theory”,


PHI.
T2. Thomas L. Floyd, “Electronic Devices” Prentice Hall.
T3. Malvino, L., “Electronic principles”, Tata McGraw Hill.
T4. Graham Bell, “Electronic Devices and Circuits”, PHI.
T5. Sedra and Smith, “Microelectronics circuits”, Oxford University
Press.

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