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Semiconductor

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Semiconductor

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aemaan846
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 Eman Ali

 BS-CS-374
 Assignment:Semiconductor Characteristics

Semiconductors:
Type of diode, which contains “p-n junction” made from differently
doped semiconductor materials. It is double-ended, nonlinear electronic
component, where terminal attached to the “p” layer (+) is called anode and
“n” layer (–) cathode. This electronic component is mainly used because of
it’s ability of making electric current flow only in one direction
(from anode to cathode) after forward-biasing the aforementioned “p-n
junction” with the positive electric voltage.

Semiconductor characteristics:
To study the characteristics of the forward and reverse biased junction diodes.
Experiment No.1
Apparatus:
1. DC power supply.
2. Two AVOmeters.
3. Breadboard, Diode and 1KΩ Resistor.
Theory:
The general from of the current - voltage c/cs of a diode is shown in Figure (l).
A current flow in the forward direction is very large compared with that in the
reverse direction and such a device is very useful as a rectifier.
The diode is in the forward direction when an external battery is connected
with positive
terminal to the (p) region and negative terminal to the region (n). The reverse
current through the diode varies greatly with temperature
and with the semiconductor material used
Experiment No.2
OBJECTIVE
The purpose of the experiment is to examine characteristics of a silicon diode and to determine the barrier
potential of the diode. From the characteristic curve
determine the dc resistance. ac resistance. for forward
biased conditions and reverse resistance for reverse biased conditions
PRELAB
1. Read the specifications of the following diodes from its datasheet:
1N4001 - 1N4007
(üi)
1N914, 1N4148
EQUIPMENT AND COMPONENTS USED
1N4007 silicon rectifier diode
1 kQ resistor, ¼ W
0-15 V dc regulated power supply
(0-100)mA, (0-100) A de ammeter
(0-1)V, (0-30)V de voltmeter
breadboard
THEORY
The diode is a device made up of a junction of n-type and p-type semiconductor material.
An ideal diode has two regions: a conduction region of zero resistance and a non-conduction region
of intinite resistance
In forward bias operation, the silicon diode will not conduct significant current until the voltage
reaches about 0 7V called cut_in voltage
After the point of cut-in voltage small change in voltage causes large increase in current.
In reverse bias operation, the diode will not conduct significant current until certain threshold voltage
called breakdown voltade
DC resistance or static resistance is the ratio of voltage to current in the forward bias characteristics.
SPECIFICATION

1N4007

Peak Repetitive Reverse Voltage, VRRM = 1000 V


Maximum RMS Voltage, VRMs = 700 V
DC Reverse Voltage, Vr= 1000 V
Maximum instantaneous reverse current at 25°C. IM = 5 uA
Maximum instantaneous forward voltage = 1.1 V
Total device dissipation = 2.5 W

PRACTICE PROCEDURE
1. Forward Bias
1. Construct the circuit as ver the diaaram shown in figure?.
2. Vary the power supply voltage in steps of 0. 1V upto cut-in voltage and thereafter in steps of 1V
unto a maximum of 10V
Note down the voltage drop across the diode and the corresponding current.
Plot the graph: I against VF
From the plot, find the static resistance, R = Ve / IF.
Find also the dvnamic resistance. r = A V- /A le

2. Reverse Bias
1. Connect the circuit as per the diagram shown in figure2
2. Vary the power supply voltage in steps of 1V upto 15V.
3. Note down the voltage drop across the diode and the corresponding

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