BAS40-00 to BAS40-06

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Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guardring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
BAS40-00 BAS40-04 • Material categorization: For definitions of compliance
3 3 please see www.vishay.com/doc?99912

Top View MECHANICAL DATA

Case: SOT-23
1 2 1 2
Weight: approx. 8.8 mg
BAS40-05 BAS40-06 Packaging codes/options:
3 3 18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Top View

1 2 1 2

PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAS40-00-E3-08 or BAS40-00-E3-18
BAS40-00 Single diode 43
BAS40-00-HE3-08 or BAS40-00-HE3-18
BAS40-04-E3-08 or BAS40-04-E3-18
BAS40-04 Dual diodes serial 44
BAS40-04-HE3-08 or BAS40-04-HE3-18
Tape and reel
BAS40-05-E3-08 or BAS40-05-E3-18
BAS40-05 Dual diodes common cathode 45
BAS40-05-HE3-08 or BAS40-05-HE3-18
BAS40-06-E3-08 or BAS40-06-E3-18
BAS40-06 Dual diodes common anode 46
BAS40-06-HE3-08 or BAS40-06-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM = VRWM = VR 40 V
Forward continuous current (1) IF 200 mA
Surge forward current (1) tp < 1 s IFSM 600 mA
Power dissipation (1) Ptot 200 mW
Note
(1) Device on fiberglass substrate, see layout on next page.

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 500 K/W
Junction temperature Tj 125 °C
Storage temperature range Tstg - 65 to + 150 °C
Operating temperature range Top - 55 to + 125 °C
Note
(1) Device on fiberglass substrate, see layout on next page.

Rev. 2.0, 25-Feb-13 1 Document Number: 85701

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 BAS40-00 to BAS40-06
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Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage IR = 10 μA (pulsed) V(BR) 40 V
Leakage current VR = 30 V IR 20 100 nA
Forward voltage IF = 1 mA VF 380 mV
Forward voltage (1) IF = 40 mA VF 1000 mV
Diode capacitance VR = 0 V, f = 1 MHz CD 4 5 pF
Reverse recovery time IF = IR = 10 mA, iR = 1 mA, RL = 100  trr 5 ns
Note
(1) Pulse test t < 300 μs
p

LAYOUT FOR RthJA TEST

Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
7.5 (0.3)
3 (0.12)

1 (0.4) 2 (0.8)
1 (0.4)
12 (0.47) 2 (0.8)
15 (0.59) 0.8 (0.03)

5 (0.2)

1.5 (0.06)
5.1 (0.2) 17451

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

3.1 (0.122) 0.550 ref. (0.022 ref.)

1.15 (0.045)
0.9 (0.035)
2.8 (0.110)
0.1 (0.004) max.

0.098 (0.004)
0.175 (0.007)

0.2 (0.008)

°
o8

0.5 (0.020)
0° t

0.45 (0.018) 0.45 (0.018) 0.3 (0.012)

0.35 (0.014) 0.35 (0.014) 2.6 (0.102)
2.35 (0.093)

0.45 (0.018)
1.43 (0.056)
1.20 (0.047)

0.35 (0.014) Foot print recommendation:

0.7 (0.028)
2 (0.079)

0.9 (0.035)

1 (0.039) 1 (0.039)
0.9 (0.035) 0.9 (0.035)

Document no.: 6.541-5014.01-4 0.95 (0.037) 0.95 (0.037)

Rev. 8 - Date: 23.Sept.2009
17418

Rev. 2.0, 25-Feb-13 2 Document Number: 85701

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000