IRSM505-055

IRSM515-055 Series

1.7Ω, 500V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM505-055 and IRSM515-055 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance
motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a
familiar package. The modules are optimized for low EMI characteristics.
IRSM505-055 includes temperature feedback while IRSM515-055 does not.

Features
• 500V 3-phase inverter including high voltage gate drivers
• Integrated bootstrap functionality
• Low 1.7Ω (max, 25°C) RDS(on) Trench FREDFET
• Under-voltage lockout for all channels
• Matched propagation delay for all channels
• Temperature feedback via NTC (IRSM505-055 only)
• Optimized dV/dt for loss and EMI trade offs
• Open-source for single and leg-shunt current sensing
• 3.3V logic compatible & advanced input filter
• Driver tolerant to negative transient voltage (-Vs)
• Isolation 1900VRMS, 1min
• RoHS Compliant
• Certified by UL - File Number E252584

Standard Pack
Series NTC Package Type Product Name
Form Quantity

SOP23 Tube 240 IRSM505-055PA

IRSM505-055 Yes DIP23 Tube 240 IRSM505-055DA

DIP23A Tube 240 IRSM505-055DA2

SOP23 Tube 240 IRSM515-055PA

IRSM515-055 No DIP23 Tube 240 IRSM515-055DA

DIP23A Tube 240 IRSM515-055DA2

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IRSM515-055 Series
Internal Electrical Schematic

1 COM 17 V+ 1 COM 17 V+
2 VB1 2 VB1
3 VCC1 3 VCC1
4 HIN1 4 HIN1
Half-Bridge 18 U/VS1 Half-Bridge 18 U/VS1
5 LIN1 HVIC 5 LIN1 HVIC

19 VR1 19 VR1
6 NC 6 NC
Integrated in HVIC Integrated in HVIC
7 VB2 7 VB2
20 VR2 20 VR2
8 VCC2 8 VCC2
9 HIN2 9 HIN2
Half-Bridge 21 V/VS2 Half-Bridge 21 V/VS2
10 LIN2 HVIC 10 LIN2 HVIC

11 VTH 11 NC
12 VB3 12 VB3
22 VR3 22 VR3
13 VCC3 13 VCC3
14 HIN3 14 HIN3
Half-Bridge 23 W/VS3 Half-Bridge 23 W/VS3
15 LIN3 HVIC 15 LIN3 HVIC

16 NC 16 NC

IRSM505-055 IRSM515-055

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at
manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table.
Symbol Description Min Max Unit
BVDSS MOSFET Blocking Voltage --- 500 V
IO @ TC=25°C DC Output Current per MOSFET --- 2.4
A
IOP @ TC =25°C Pulsed Output Current per MOSFET (Note 1) --- 15
Pd @ TC=25°C Maximum Power Dissipation per MOSFET --- 18 W
VISO Isolation Voltage (1min) --- 1900 VRMS
TJ Operating Junction Temperature -40 150 °C
TC Operating Case Temperature -40 150 °C
TS Storage Temperature -40 150 °C
VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 - 20 VB1,2,3 +0.3 V
VB1,2,3 High Side Floating Supply Voltage -0.3 525 V
VCC Low Side and Logic Supply voltage -0.3 25 V
VIN Input Voltage of LIN, HIN COM -0.3 VCC+0.3 V
Note 1: Pulse Width = 100µs, Single Pulse

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Recommended Operating Conditions

Symbol Description Min Max Unit
V+ Positive DC Bus Input Voltage --- 400 V
VS1,2,3 High Side Floating Supply Offset Voltage (Note 2) 400 V
VB1,2,3 High Side Floating Supply Voltage VS+12 VS+20 V
VCC Low Side and Logic Supply Voltage 13.5 16.5 V
VIN Input Voltage of LIN, HIN, ITRIP, EN, FLT 0 5 V
Fp PWM Carrier Frequency --- 20 kHz
Note 2: Logic operational for Vs from COM-8V to COM+500V. Logic state held for Vs from COM-8V to COM-VBS.

Static Electrical Characteristics

(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Symbol Description Min Typ Max Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 --- --- V TJ=25°C, ILK=250µA

ILKH Leakage Current of High Side FET 12 µA TJ=25°C, VDS=500V

Leakage Current of Low Side FET Plus

ILKL 14 µA TJ=25°C, VDS=500V
Gate Drive IC
--- 1.3 1.7 Ω TJ=25°C, VCC=15V, Id = 1.2A
RDS(on) Drain to Source ON Resistance TJ=150°C, VCC=15V, Id = 1A
--- 3.2 --- Ω
(Note 3)
VSD Mosfet Body Diode Forward Voltage --- 0.8 --- V TJ=25°C, VCC=15V, ID=1.2A
VIN,th+ Positive Going Input Threshold 2.2 --- --- V
VIN,th- Negative Going Input Threshold --- --- 0.8 V
VCCUV+, VCC and VBS Supply Under-Voltage,
8 8.9 9.8 V
VBSUV+ Positive Going Threshold

VCCUV-, VCC and VBS supply Under-Voltage,

6.9 7.7 8.5 V
VBSUV- Negative Going Threshold

VCCUVH, VCC and VBS Supply Under-Voltage

--- 1.2 --- V
VBSUVH Lock-Out Hysteresis
IQBS Quiescent VBS Supply Current VIN=0V --- 45 60 µA
IQBS, ON Quiescent VBS Supply Current VIN=4V --- 45 60 µA
IQCC Quiescent VCC Supply Current VIN=0V --- 1.8 4 mA
IQCC, ON Quiescent VCC Supply Current VIN=4V --- 1.9 4 mA
IIN+ Input Bias Current VIN=4V --- 5.7 18 µA VIN=3.3V
IIN- Input Bias Current VIN=0V --- --- 2 µA VIN=0V
Internal Bootstrap Equivalent Resistor
RBR --- 250 --- Ω TJ=25°C
Value
Note 3: Characterized, not tested at manufacturing

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Dynamic Electrical Characteristics

(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified.
Symbol Description Min Typ Max Units Conditions
Input to Output Propagation Turn-On
TON --- 0.8 1.5 µs
Delay Time
ID=120mA, V+=30V
See Fig.1
Input to Output Propagation Turn-Off
TOFF --- 0.9 1.5 µs
Delay Time
TFIL,IN Input Filter Time (HIN, LIN) 200 300 --- ns VIN=0 & VIN=3.3V
VIN=0 & VIN=3.3V without
DT Deadtime Inserted --- 400 --- ns
external deadtime
EON Turn-on switching energy loss --- 32 --- µJ
V+=320V, ID=0.5A, L=40mH,
EOFF Turn-off switching energy loss --- 6 --- µJ
TC=25°C (Note 4)
EREC Recovery energy loss --- 5 --- µJ
EON,150 Turn-on switching energy loss --- 59 --- µJ
V+=320V, ID=0.5A, L=40mH,
EOFF,150 Turn-off switching energy loss --- 7 --- µJ
TC=150°C (Note 4)
EREC,150 Recovery energy loss --- 12 --- µJ
Note 4: Characterized, not tested at manufacturing

Thermal and Mechanical Characteristics

Symbol Description Min Typ Max Units Conditions

High Side V-Phase Mosfet

Rth(J-C) Junction to Case Thermal Resistance --- 6.8 --- °C/W
(Note 5)
Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2.

Internal NTC – Thermistor Characteristics (IRSM505-055 Only)

Symbol Description Min Typ Max Units Conditions
R25 Resistance --- 47 --- kΩ TC=25°C, ±5% tolerance
R125 Resistance --- 1.41 --- kΩ TC=125°C
B B-constant (25-50°C) --- 4050 --- K ±2% tolerance (Note 6)
Temperature Range -40 --- 125 °C
Note 6: See application notes for usage

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Qualification Information†
Qualification Level Industrial††

Moisture Sensitivity Level MSL3†††

RoHS Compliant Yes

UL Certified Yes – File Number E252584

Machine Model Class B

ESD
Human Body Model Class 2

† Qualification standards can be found at International Rectifier’s web site http://www.infineon.com/

†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.

††† SOP23 package only. Higher MSL ratings may be available for the specific package types listed here. Please contact
your International Rectifier sales representative for further information.

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IRSM515-055 Series
Module Pin-Out Description
Pin Name Description
1 COM Logic Ground
2 VB1 High Side Floating Supply Voltage 1
3 VCC1 15V Supply 1
4 HIN1 Logic Input for High Side Gate Driver - Phase 1
5 LIN1 Logic Input for Low Side Gate Driver - Phase 1
6 NC Not Connected
7 VB2 High Side Floating Supply Voltage 2
8 VCC2 15V Supply 2
9 HIN2 Logic Input for High Side Gate Driver - Phase 2
10 LIN2 Logic Input for Low Side Gate Driver - Phase 2
VTH Thermistor Output (IRSM505-055DA)
11
NC Not Connected (IRSM515-055DA)
12 VB3 High Side Floating Supply Voltage 3
13 VCC3 15V Supply 3
14 HIN3 Logic Input for High Side Gate Driver - Phase 3
15 LIN3 Logic Input for Low Side Gate Driver - Phase 3
16 NC Not Connected
17 V+ DC Bus Voltage Positive
18 U/VS1 Output - Phase 1, High Side Floating Supply Offset 1
19 VR1 Phase 1 Low Side Source
20 VR2 Phase 2 Low Side Source
21 V/VS2 Output - Phase 2, High Side Floating Supply Offset 2
22 VR3 Phase 3 Low Side Source
23 W/VS3 Output - Phase 3, High Side Floating Supply Offset 2
10

11

12

13

14

15

16
1

A 0123-412W
IRSM505-055PA
17

18

19

20

21

22

23

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Referenced Figures

VCE IC IC VCE

HIN /LIN 90 % IC
50%
90 % IC
HIN /LIN 50% 50%
VCE HIN /LIN
HIN /LIN
50%
VCE

10 % IC
10 % IC

tr tf
TON TOFF
Figure 1a: Input to Output propagation turn-on Figure 1b: Input to Output propagation turn-off
delay time. delay time.

IF VCE

HIN /LIN

Irr

trr
Figure 1c: Diode Reverse Recovery.

Figure 1: Switching Parameter Definitions

14.5mm

3.8mm TC

Top View
Figure 2: TC measurement point for Rth(j-C)

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IRSM515-055 Series
Application Notes

A basic application schematic is shown below.

VB2

VB1 VB3 IRSM505-055xA

VBUS

2M
VCC
HVICs
XTAL0 PWMUH HIN1
PWMVH HIN2
PWMWH HIN3
U, VS1
XTAL1 V, VS2
PWMUL LIN1
SPD-REF PWMVL LIN2
W, VS3
AIN2
PWMWL LIN3
IRMCF171 +
GATEKILL
- 7.50k
Power AIN1
3V
VDD IFB+ VTH
Supply
IFB- COM
VDDCAP 6.04k
IFBO 1nF
VSS
7.68k
4.87k

0.25

Figure 3: Basic sensor-less motor drive circuit connection. Motor is connected to U, V, W

A complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is
available. The board – photo below – features the µIPM™-DIP module and the iMotion™ digital control IC.
“Reference design kits are available on www.infineon.com/ipm website”

Figure 4: Reference design board featuring the µIPM™-DIP module and the iMotion™ IRMCF171 digital control IC

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IRSM515-055 Series
Figures 5-7 show the typical current capability for this module at specified conditions. In all tests, the application
board – the IRMCS1071-1-D reference board – was placed in a box to prevent cooling from ambient airflow.
Figure 5 is derived from using a heat sink that maintains TC at 125°C. Figures 6-7 represent current capability for
the module as used without any heat sink. ∆TJA represents the difference in temperature between the junction of
the high-side V-phase Mosfet and the ambient, measured 10cm above and 6cm away from the board. Ambient
temperature kept within 28-29°C.

1600

1400

1200
RMS Phase Current (mA)

1000

800
3-Phase Modulation

600 2-Phase Modulation

400

200

0
6 8 10 12 14 16 18 20
Carrier Frequency (kHz)
Figure 5: Maximum sinusoidal phase current vs PWM switching frequency with a heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=150°C, TC=125°C

700

600
RMS Phase Current (mA)

500

400

3-Phase Modulation
300
2-Phase modulation

200

100

0
6 8 10 12 14 16 18 20
Carrier Frequency (kHz)
Figure 6: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=128°C

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IRSM515-055 Series

600

500
RMS Phase Current (mA)

400

300
3-Phase Modulation
2-Phase Modulation
200

100

0
6 8 10 12 14 16 18 20
Carrier Frequency (kHz)
Figure 7: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=98°C

The module contains an NTC – connected between COM and the VTH pin – which can be used to monitor the
temperature of the module. The NTC is effectively a resistor whose value decreases as the temperature rises.
The NTC resistance can be calculated at any temperature as follows:

1 1
�𝐵𝐵� − ��
𝑅𝑅𝑇𝑇𝑇𝑇 = 𝑅𝑅25 𝑒𝑒 𝑇𝑇𝑇𝑇𝑇𝑇 𝑇𝑇25 , where 𝑅𝑅25 is 47kΩ and 𝐵𝐵 is 4050K

An external resistor network is connected to the NTC, the simplest of which is one resistor pulled up to VCC as
shown in Figure 3. The VTH vs NTC temperature, TTH curve for this configuration is shown in Figure 8 below. The
min, typical and max curves result from the NTC having a ±5% tolerance on its resistance and ±2% tolerance on
the B-parameter.

Figure 9 shows the thermistor temperature, TTH plotted against the high-side V-phase junction temperature, TJ for
a module without a heat sink. It is thus advisable to shut down the module when TTH reaches 125°C.

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IRSM515-055 Series

14.0

min typical max

12.0

10.0

8.0
VTH (V)

6.0

4.0

2.0

0.0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
TTH (°C)
Figure 8: VTH vs TTH with VTH pin pulled up to VCC with a 7.50kΩ (1%, 100ppm) resistor.
A 15V, 1% variation in VCC is assumed.

140

120

100

80
TTH (°C

60

40

20

0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
TJ (°C)
Figure 9: TTH vs TJ for a module without a heat sink. VCC=15.4V, R=7.50kΩ

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IRSM515-055 Series
SOP23 Package Outline

Dimensions in mm

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IRSM515-055 Series
DIP23A Package Outline

Dimensions in mm

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IRSM515-055 Series
DIP23 Package Outline

Dimensions in mm

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IRSM515-055 Series
Top Marking

A 0123-412P
IRSM505-055PA

Marking Code P = Pb Free; Y = Engineering Samples

Date Code YWW format, where Y = least significant digit of the production year , WW = two digits representing
the week of the production year

Revision History :
• Nov 2014 Corrected logic in Figure 1. Added UL certification note.
• Jan 2020 Updated the part table on page 1. OPNs are no longer listed in the
datasheet. Updated headers, footers and disclaimers on datasheet.

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Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE
Edition 2019-08-09 The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by characteristics (“Beschaffenheitsgarantie”) . contact your nearest Infineon Technologies office
Infineon Technologies AG (www.infineon.com).
With respect to any examples, hints or any typical
81726 Munich, Germany values stated herein and/or any information Please note that this product is not qualified
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents
Technologies hereby disclaims any and all of the Automotive Electronics Council.
© 2019 Infineon Technologies AG. warranties and liabilities of any kind, including
All Rights Reserved. without limitation warranties of non-infringement
of intellectual property rights of any third party. WARNINGS
Do you have a question about this Due to technical requirements products may
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The data contained in this document is exclusively not be used in any applications where a failure of
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