STM32H7B0xB

Datasheet

32-bit Arm® Cortex®-M7 280 MHz MCUs, 128-Kbyte Flash memory, 1.4-Mbyte
RAM, 46 com. and analog interfaces, SMPS, crypto

Features
FBGA
Includes ST state-of-the-art patented technology
Core
LQFP64 UFBGA169
(10 x 10 mm)
LQFP100
(7 x 7 mm) • 32-bit Arm® Cortex®-M7 core with double-precision FPU and L1 cache:
UFBGA176+25
(14 x 14 mm) (10x10 mm) 16 Kbytes of data and 16 Kbytes of instruction cache allowing to fill one cache
LQFP144
(20x20 mm) line in a single access from the 128-bit embedded flash memory; frequency up
LQFP176
(24 x 24 mm) to 280 MHz, MPU, 599 DMIPS/ 2.14 DMIPS/MHz (Dhrystone 2.1), and DSP
instructions
Memories
• 128 Kbytes of flash memory plus 1 Kbyte of OTP memory
• ~1.4 Mbytes of RAM: 192 Kbytes of TCM RAM (inc. 64 Kbytes of ITCM RAM +
128 Kbytes of DTCM RAM for time critical routines), 1.18 Mbytes of user SRAM,
and 4 Kbytes of SRAM in Backup domain
Product summary • 2x Octo-SPI memory interfaces with on-the-fly decryption, I/O multiplexing and
support for serial PSRAM/NOR, Hyper RAM/flash frame formats, running up to
STM32H7B0AB, 140 MHz in SRD mode and up to 110 MHz in DTR mode
STM32H7B0IB,
STM32H7B0xB STM32H7B0RB, • Flexible external memory controller with up to 32-bit data bus:
STM32H7B0ZB, – SRAM, PSRAM, NOR flash memory clocked up to 125 MHz in
STM32H7B0VB Synchronous mode
– SDRAM/LPSDR SDRAM
– 8/16-bit NAND flash memories
• CRC calculation unit
Security
• ROP, PC-ROP, active tamper, secure firmware upgrade support, Secure access
mode
General-purpose input/outputs
• Up to 138 I/O ports with interrupt capability
– Fast I/Os capable of up to 133 MHz
– Up to 164 5-V-tolerant I/Os
Low-power consumption
• Stop: down to 32 µA with full RAM retention
• Standby: 2.8 µA (Backup SRAM OFF, RTC/LSE ON, PDR OFF)
• VBAT: 0.8 µA (RTC and LSE ON)
Clock management
• Internal oscillators: 64 MHz HSI, 48 MHz HSI48, 4 MHz CSI, 32 kHz LSI
• External oscillators: 4-50 MHz HSE, 32.768 kHz LSE
• 3× PLLs (1 for the system clock, 2 for kernel clocks) with fractional mode

DS13196 - Rev 7 - May 2022 www.st.com

For further information contact your local STMicroelectronics sales office.
 STM32H7B0xB

Reset and power management

• 2 separate power domains, which can be independently clock gated to maximize power efficiency:
– CPU domain (CD) for Arm® Cortex® core and its peripherals, which can be independently switched in
Retention mode
– Smart run domain (SRD) for reset and clock control, power management and some peripherals
• 1.62 to 3.6 V application supply and I/Os
• POR, PDR, PVD and BOR
• Dedicated USB power embedding a 3.3 V internal regulator to supply the internal PHYs
• Dedicated SDMMC power supply
• High power efficiency SMPS step-down converter regulator to directly supply VCORE or an external circuitry
• Embedded regulator (LDO) with configurable scalable output to supply the digital circuitry
• Voltage scaling in Run and Stop mode
• Backup regulator (~0.9 V)
• Low-power modes: Sleep, Stop and Standby
• VBAT battery operating mode with charging capability
• CPU and domain power state monitoring pins
Interconnect matrix
• 3 bus matrices (1 AXI and 2 AHB)
• Bridges (5× AHB2APB, 3× AXI2AHB)
5 DMA controllers to unload the CPU
• 1× high-speed general-purpose master direct memory access controller (MDMA)
• 2× dual-port DMAs with FIFO and request router capabilities
• 1× basic DMA with request router capabilities
• 1x basic DMA dedicated to DFSDM
Up to 35 communication peripherals
• 4× I2C FM+ interfaces (SMBus/PMBus)
• 5× USART/5x UARTs (ISO7816 interface, LIN, IrDA, modem control) and 1x LPUART
• 6× SPIs, including 4 with muxed full-duplex I2S audio class accuracy via internal audio PLL or external clock
and 1 x SPI/I2S in LP domain (up to 125 MHz)
• 2x SAIs (serial audio interface)
• SPDIFRX interface
• SWPMI single-wire protocol master interface
• MDIO Slave interface
• 2× SD/SDIO/MMC interfaces (up to 133 MHz)
• 2× CAN controllers: 2 with CAN FD, 1 with time-triggered CAN (TT-CAN)
• 1× USB OTG interfaces (1HS/FS)
• HDMI-CEC
• 8- to 14-bit camera interface up to 80 MHz
• 8-/16-bit parallel synchronous data input/output slave interface (PSSI)
11 analog peripherals
• 2× ADCs with 16-bit max. resolution (up to 24 channels, up to 3.6 MSPS)
• 1× analog and 1x digital temperature sensors
• 1× 12-bit single-channel DAC (in SRD domain) + 1× 12-bit dual-channel DAC
• 2× ultra-low-power comparators
• 2× operational amplifiers (8 MHz bandwidth)
• 2× digital filters for sigma delta modulator (DFSDM), 1x with 8 channels/8 filters and 1x in SRD domain with 2
channels/1 filter

DS13196 - Rev 7 page 2/205

 STM32H7B0xB

Graphics
• LCD-TFT controller up to XGA resolution
• Chrom-ART graphical hardware Accelerator (DMA2D) to reduce CPU load
• Hardware JPEG Codec
• Chrom-GRC™ (GFXMMU)
Up to 19 timers and 2 watchdogs
• 2× 32-bit timers with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input (up to
280 MHz)
• 2× 16-bit advanced motor control timers (up to 280 MHz)
• 10× 16-bit general-purpose timers (up to 280 MHz)
• 3× 16-bit low-power timers (up to 280 MHz)
• 2× watchdogs (independent and window)
• 1× SysTick timer
• RTC with sub-second accuracy and hardware calendar
Cryptographic acceleration
• AES chaining modes: ECB,CBC,CTR,GCM,CCM for 128, 192 or 256
• HASH (MD5, SHA-1, SHA-2), HMAC
• 2x OTFDEC AES-128 in CTR mode for Octo-SPI memory encryption/decryption
• 1x 32-bit, NIST SP 800-90B compliant, true random generator
Debug mode
• SWD and JTAG interfaces
• 4 KB Embedded Trace Buffer
96-bit unique ID
All packages are ECOPACK2 compliant

DS13196 - Rev 7 page 3/205

 STM32H7B0xB
Introduction

1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of the STM32H7B0xB
microcontrollers.
This document should be read in conjunction with the STM32H7B0xB reference manual (RM0455). The reference
manual is available from the STMicroelectronics website .
For information on the device errata with respect to the datasheet and reference manual, refer to the
STM32H7B0xB errata sheet (ES0478), available on the STMicroelectronics website .
For information on the Arm® Cortex®-M7 core, refer to the Cortex®-M7 Technical Reference Manual, available
from the www.arm.com website
Note: Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

DS13196 - Rev 7 page 4/205

 STM32H7B0xB
Description

2 Description

STM32H7B0xB devices are based on the high-performance Arm® Cortex®-M7 32-bit RISC core operating at up
to 280 MHz. The Cortex® -M7 core features a floating point unit (FPU) which supports Arm® double-precision
(IEEE 754 compliant) and single-precision data-processing instructions and data types. STM32H7B0xB devices
support a full set of DSP instructions and a memory protection unit (MPU) to enhance application security.
STM32H7B0xB devices incorporate high-speed embedded memories with a flash memory of 128 Kbytes, around
1.4 Mbyte of RAM (including 192 Kbytes of TCM RAM, 1.18 Mbytes of user SRAM and 4 Kbytes of backup
SRAM), as well as an extensive range of enhanced I/Os and peripherals connected to four APB buses, three AHB
buses, a 32-bit multi-AHB bus matrix and a multi layer AXI interconnect supporting internal and external memory
access.
All the devices offer two ADCs, two DACs (one dual and one single DAC), two ultra-low power comparators, a
low-power RTC, 12 general-purpose 16-bit timers, two PWM timers for motor control, three low-power timers,
a true random number generator (RNG), and a cryptographic acceleration cell and a HASH processor. The
devices support nine digital filters for external sigma delta modulators (DFSDM). They also feature standard and
advanced communication interfaces.
• Standard peripherals
– Four I2Cs
– Five USARTs, five UARTs and one LPUART
– Six SPIs, four I2Ss in full-duplex mode. To achieve audio class accuracy, the I2S peripherals can be
clocked via a dedicated internal audio PLL or via an external clock to allow synchronization.
– Two SAI serial audio interfaces, out of which one with PDM
– One SPDIFRX interface
– One single wire protocol master interface (SWPMI)
– One 16-bit parallel synchronous slave interface (PSSI) sharing the same interface as the digital
camera)
– Management Data Input/Output (MDIO) slaves
– Two SDMMC interfaces (one can be supplied from a supply voltage separate from that of all other I/Os)
– A USB OTG high-speed with full-speed capability (with the ULPI)
– One FDCAN plus one TT-CAN interface
– Chrom-ART Accelerator
– HDMI-CEC
• Advanced peripherals including
– A flexible memory control (FMC) interface
– Two octo-SPI memory interface with on-the-fly decryption (OTFDEC)
– A digital camera interface for CMOS sensors (DCMI)
– A graphic memory management unit (GFXMMU)
– An LCD-TFT display controller (LTDC)
– A JPEG hardware compressor/decompressor
Refer to Table 1. STM32H7B0xB features and peripheral counts for the list of peripherals available on each part
number.
STM32H7B0xB devices operate in the –40 to +85 °C ambient temperature range from a 1.62 to 3.6 V
power supply. The supply voltage can drop down to 1.62 V by using an external power supervisor (see
Section 3.5.2 Power supply supervisor) and connecting the PDR_ON pin to VSS. Otherwise the supply voltage
must stay above 1.71 V with the embedded power voltage detector enabled.
The USB OTG_HS/FS interfaces can be supplied either by the integrated USB regulator or through a separate
supply input.
A dedicated supply input is available for one of the SDMMC interface for package with more than 100 pins. It
allows running from a different voltage level than all other I/Os.
A comprehensive set of power-saving mode allows the design of low-power applications.
The CPU and domain states can be directly monitored on some GPIOs configured as alternate functions.
STM32H7B0xB devices are offers in several packages ranging from 64 pins to 225 pins/balls. The set of included
peripherals changes with the device chosen.

DS13196 - Rev 7 page 5/205

 STM32H7B0xB
Description

These features make the STM32H7B0xB microcontrollers suitable for a wide range of applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
• Mobile applications, Internet of Things
• Wearable devices: smart watches.
Figure 1. STM32H7B0xB block diagram shows the general block diagram of the device family.

DS13196 - Rev 7 page 6/205

 DS13196 - Rev 7

Table 1. STM32H7B0xB features and peripheral counts

SMPS (1) no-SMPS

STM32H7B0RBT
STM32H7B0VBT
STM32H7B0ZBT
STM32H7B0IBK

STM32H7B0ABI

STM32H7B0IBT
Peripherals

Flash memory (Kbytes) 128

SRAM on AXI 1024

SRAM in Kbytes SRAM on AHB (CD domain) 128

SRAM on AHB (SRD domain) 32

ITCM RAM (instruction) 64

TCM RAM in Kbytes
DTCM RAM (data) 128

Backup SRAM (Kbytes) 4

Interface 1

NOR Flash memory/RAM

x (2) x x(2) -
controller

FMC Multiplexed I/O NOR Flash

x x x(2) -
memory

16-bit NAND Flash memory x x x(2) -

SDRAM controller x(2) x x(2) -

Octo-SPI interfaces(3) 2(4) 2 2(4) 1 Octo-SPI 1 Quad-SPI

General-purpose 10

Advanced-control (PWM) 2
Timers
Basic 2

Low-power 3

Window watchdog / independent watchdog 1/1

Real-time Clock (RTC) 1

Passive 2 3 2

STM32H7B0xB
Tamper pins (5)
Active 1 2 1

Random number generator 1

Cryptographic accelerator 1
page 7/205

Hash processor (HASH) 1

On-the-fly decryption for external Octo-SPI memory 2 2 2 2(2)

 DS13196 - Rev 7

SMPS (1) no-SMPS

STM32H7B0RBT
STM32H7B0VBT
STM32H7B0ZBT
STM32H7B0IBK

STM32H7B0ABI

STM32H7B0IBT
Peripherals

SPI/I2S (6) 6/4 6/4 5/4 4/4

I2C 4 3

USART/UART 5/5 5/5 5(2)/5 4(2)/3(2)

/LPUART /1 /1 /1 /1

SAI/PDM 2/1 2/1 2(2)/1 1(2)/-

SPDIFRX 4 inputs 4 inputs

Communi-cation interfaces
SWPMI 1

MDIOS 1

SDMMC 2 2 2(7)

FDCAN/TT-CAN 1/1 1/1(2)

USB OTG_HS ULPI, OTG_FS

1 1 1 1 (8) 1 (9)
PHY

Digital camera interface/PSSI (10) 1/1 1/1

LCD-TFT display controller 1

JPEG Codec 1

Chrom-ART Accelerator (DMA2D) 1

Graphic memory management unit (GFXMMU) 1

HDMI CEC 1

DFSDM 2
Number of filters for DFSDM1/DFSDM2 8/1 8/1 7/1

8 to 16 bits 2
ADCs
Number of channels 24 24 20(11) 16(11)

12 bits 2
DACs

STM32H7B0xB
Number of channels 3 (1 single channel + 1 dual-channel interfaces)

Comparators 2 2 1

Operational amplifier 2 2 1

GPIOs 128 121 138 112 80 49

page 8/205

Wakeup pins 4 6 4
 DS13196 - Rev 7

SMPS (1) no-SMPS

STM32H7B0RBT
STM32H7B0VBT
STM32H7B0ZBT
STM32H7B0IBK

STM32H7B0ABI

STM32H7B0IBT
Peripherals

Maximum CPU frequency (MHz) 280

SMPS step-down converter 1 -

USB internal regulator 1 -

USB separate supply pad 1 -

VDDMMC separate supply pad 1 -

VREF+ separate pad and internal buffer 1 1 1 -

Operating voltage 1.62 to 3.6 V (12)

Ambient temperature range: −40 to 85 °C

Operating temperatures
Junction temperature range: −40 to 130 °C(13)

Packages UFBGA176+25 UFBGA169 LQFP176 LQFP144 LQFP100 LQFP64

USART, I2C, SPI, USB- USART, I2C, SPI, USART, I2C, SPI,
Bootloader USART, I2C, SPI, USB-DFU
DFU, FDCAN USB-DFU, FDCAN USB-DFU, FDCAN

1. The devices with SMPS correspond to commercial code STM32H7B0xIxxQ.

2. For limitations on peripheral features depending on packages, check the available pins/balls in Table 7. STM32H7B0xB pin/ball definition.
3. To maximize the performance, the I/O high-speed at low-voltage feature (HSLV) must be activated when VDD < 2.7 V. This feature is not available on all I/Os (see
Table 88. OCTOSPI characteristics in SDR mode, and Table 89. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus).
4. The I/O high-speed at low-voltage feature (HSLV) at VDD < 2.7 V is not available for OCTOSPIM_P2.
5. A tamper pin can be configured either as passive or active (not both).
6. SPI1, SPI2, SPI3 and SPI6 interfaces give the flexibility to work in an exclusive way in either SPI mode or I2S audio mode.
7. Dedicated I/O supply pad (VDDMMC) or external level shifter are not supported.
8. The ULPI interface is supported. PC2 and PC3 are available on PC2_C and PC3_C, respectively, by closing the internal analog switch (see Table 7. STM32H7B0xB pin/ball
definition).
9. The ULPI interface is not supported.
10. DCMI and PSSI cannot be used simultaneously since they share the same circuitry.
11. For limitations on fast pads or channels depending on packages, check to the available pins/balls in Table 7. STM32H7B0xB pin/ball definition.
12. VDD/VDDA can drop down to 1.62 V by using an external power supervisor (see Section 3.5.2 Power supply supervisor) and connecting PDR_ON pin to VSS. Otherwise the supply

STM32H7B0xB
voltage must stay above 1.71 V with the embedded power voltage detector enabled.
13. The junction temperature is limited to 105 °C in VOS0 voltage range.
page 9/205
 STM32H7B0xB

Figure 1. STM32H7B0xB block diagram

DP, DM, ID, SDMMC_

To APB1-2 D[7:0],
peripherals VBUS
CMD, CK as AF

AHB1 AHB2
I-TCM D-TCM D-TCM CPU_AHBP
64KB 64KB 64KB PHY
AXI/AHB12 (280 MHz) DMA1 DMA2 OTG_FS SDMMC2 BDMA1 8ch
AHBP
for DFSDM
128 KB
ARM CPU
FLASH 8 Stream 8 Stream DMA/
FIFO
JTRST, JTDI, Cortex-M7 FIFOs FIFOs FIFO
JTCK/SWCLK JTAG/SW 280 MHz 256 KB
JTDO/SWD, JTDO AXIM AXI_SRAM1
TRACECK ETM
384 KB
AXI_SRAM2 32-bit AHB BUS-MATRIX
TRACED[3:0] I-Cache D-Cache
384 KB
16KB 16KB
AXI_SRAM3

AHB1 (280 MHz)

AHBS AHB_SRAM1 AHB_SRAM2
FMC 64 KB 64 KB
16 Streams Up to 20 analog inputs
MDMA FMC_signals
64-bit AXI BUS-MATRIX

FIFO ADC1 Some inputs are

OCTOSPI1
OTFDEC1 common to ADC1&2
OCTOSPI1_signals
DMA ADC2 Up to 20 analog inputs
CHROM-ART
FIFO

AHB3 (280 MHz)

(DMA2D) Mux1 AHB/APB

OCTOSPIM
Analog Temp Sensor
LCD_R[7:0], LCD_G[7:0],
LCD_B[7:0], LCD_HSYNC,
CRC
LCD_VSYNC, LCD_DE, LCD_CLK LCD-TFT FIFO TIM2 4 channels, ETR as AF
OCTOSPI2

RNG
APB3 (140 MHz)

32b
OTFDEC2

HSEM

AHB2 (280 MHz)

TIM3 4 channels, ETR as AF

AHB1 280 MHz (max)

16b

AHB4 (280 MHz)

WWDG JPEG OCTOSPI2_signals HASH
3DES/AES 16b
TIM4 4 channels, ETR as AF
AHB/APB AHB3 (280 MHz)
DB-SDMMC1
SDMMC_D[7:0],SDMMC_D[7:3,1]Dir DB-SDMMC2 TIM5 4 channels
SDMMC_D0dir, SDMMC_D2dir DB-OCTOSPI1 32b
CMD, CMDdir, CK, Ckin, SDMMC1 FIFO DB-OCTOSPI2
16b
TIM12 2 channels as AF
CKio as AF AXI/AHB34 (280 MHz) AHB3
AHB4

TIM13 1 channel as AF
HSYNC, VSYNC, PIXCLK, D[13:0] DCMI 16b
AHB2 280 MHz (max)
PDCK, DE, RDY, D[15:0] PSSI TIM14 1 channel as AF
16b
AHB/APB AHB1 280 MHz (max) smcard RX, TX, SCK, CTS,
DFSDM_CKOUT,
USART2
irDA RTS as AF
DFSDM_DATAIN[7:0], DFSDM1 8ftrs
DFSDM_CKIN[7:0] smcard RX, TX, SCK
USART3 CTS, RTS as AF
irDA
FIFO FIFO

SD, SCK, FS, MCLK, PDM_D[3:1], SAI1/PDM

PDM_CK[2:1] as AF UART4 RX, TX as AF
TIM6 16b
SD, SCK, FS, MCLK, AF SAI2 UART5 RX, TX as AF
AHB4 280 MHz (max)

AHB4 280 MHz (max)

TIM7 16b
MOSI, MISO, SCK, SS /
SPI/I2S1 UART7 RX, TX as AF
SDO, SDI, CK, WS, MCK, as AF
SWPMI
A P B 10 MHz

SPI4
3

MOSI, MISO, SCK, SS as AF UART8 RX, TX as AF

MOSI, MISO, SCK, SS as AF SPI5 SPI2/I2S2 MOSI, MISO, SCK, SS /

SDO, SDI, CK, WS, MCK, as AF
smcard MOSI, MISO, SCK, SS /
SPI3/I2S3
RX, TX, SCK, CTS, RTS as AF
irDA USART1
APB1 140 MHz (max)

SDO, SDI, CK, WS, MCK, as AF

APB2 140 MHz (max)

smcard
RX, TX, SCK, CTS, RTS as AF
irDA USART6
I2C1/SMBUS SCL, SDA, SMBAL as AF
10 KB SRAM

Digital filter

DMA
RX, TX as AF UART9 Mux2 I2C2/SMBUS SCL, SDA, SMBAL as AF
smcard DAP
RX, TX, SCK, CTS, RTS as AF
irDA USART10
BDMA2 I2C3/SMBUS SCL, SDA, SMBAL as AF
2 compl. chan.(TIM15_CH1[1:2]N), TIM15
2 chan. (TIM_CH15[1:2], BKIN as AF 16b MDIOS MDC, MDIO
1 compl. chan.(TIM16_CH1N),
TIM16 32-bit AHB BUS-MATRIX RAM TT-FDCAN1 TX, RX
AHB4

FIFO

1 chan. (TIM16_CH1, BKIN as AF 16b

I/F
1 compl. chan.(TIM17_CH1N), FDCAN2 TX, RX
1 chan. (TIM17_CH1, BKIN as AF TIM17 16b
4 compl. chan. (TIM1_CH1[1:4]N),
CRS SYNC
TIM1/PWM
AHB4

4 chan. (TIM1_CH1[1:4]ETR, BKIN as AF 16b

32 KB 4 KB SPIF-RX1 SPDIFRX[3:0] as AF
4 compl. chan. (TIM1_CH1[1:4]N), SRD_SRAM BKP_SRAM
4 chan. (TIM1_CH1[1:4]ETR, BKIN as AF
TIM8/PWM 16b
HDMI-CEC HDMI_CEC as AF

AHB4 280 MHz (max) DAC DAC1_OUT1 as AF

PA..I[15:0] GPIO PORTA.. I DAC1
DAC DAC1_OUT2 as AF
AHB4

LPTIM1_IN1, LPTIM1_IN2,
LPTIM1 16b LPTIM2_OUT as AF

OPAMPx_VINM
OPAMP1&2 OPAMPx_VINP
AHB4

@VDD33 OPAMPx_VOUT as AF
RCC VDD12
DFSDM_CKOUT, BBgen + POWER MNGT VDD
Reset & VDDMMC
DFSDM_DATAIN[1:0], DFSDM2 1ftr Digital Temp Sensor Voltage SMPS
PWRCTRL

Clock VSS
DFSDM_CKIN[1:0]
Control regulator Step-down VCAP, VDDLDO
IWDG VDDSMPS, VSSSMPS
COMPx_INP, COMPx_INM, COMP1&2 AHB/ 3.3 to 1.2V converter VLXSMPS, VFBSMPS
COMPx_OUT as AF APB
Tamper monitor Temp USB regulator
VDD50USB
VDD33USB
DAC2_OUT1 as AF DAC2 Monitor Vbat charging
LPTIM2
APB4
APB4

LPTIM2_OUT as AF 16b APB4 140 MHz (max) VDD VBAT

@VSW
LPTIM3_OUT as AF LPTIM3 OSC32_IN
16b LSE XTAL 32 kHz
LS

OSC32_OUT
SCL, SDA, SMBAL as AF I2C4 RTC RTC_TS
MOSI, MISO, SCK, SS /
SPI6/I2S6 @VDD Backup registers RTC_TAMP[1:3]
SYSCFG
LS

SDO, SDI, CK, WS, MCK, as AF AWU RTC_OUT

RTC_REFIN
RX, TX, CK, CTS, RTS as AF LPUART1 EXTI WKUP CSI RC 4MHz
CSI @VDD

PLL1+PLL2+PLL3 HSE XTAL OSC OSC_IN

VREF+ VREF 4 - 48MHz OSC_OUT
HSI HSI RC 64MHz WDG_LS_D1
MCO1
HSI48 HSI48 RC 48MHz MCO2
Vref internal @VDD
LSI LSI RC 32kHz
POR SUPPLY SUPERVISION VDDA, VSSA
reset POR/PDR/BOR NRESET
Int WKUP[6:1]
PVD

DS13196 - Rev 7 page 10/205

 STM32H7B0xB
Functional overview

3 Functional overview

3.1 Arm® Cortex®-M7 with FPU

The Arm® Cortex®-M7 with double-precision FPU processor is the latest generation of Arm processors
for embedded systems. It was developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and optimized power consumption, while delivering outstanding
computational performance and low interrupt latency.
The Cortex®-M7 processor is a highly efficient high-performance featuring:
• Six-stage dual-issue pipeline
• Dynamic branch prediction
• Harvard architecture with L1 caches (16 Kbytes of I-cache and 16 Kbytes of D-cache)
• 64-bit AXI4 interface
• 64-bit ITCM interface
• 2x32-bit DTCM interfaces
The following memory interfaces are supported:
• Separate Instruction and Data buses (Harvard Architecture) to optimize CPU latency
• Tightly Coupled Memory (TCM) interface designed for fast and deterministic SRAM accesses
• AXI Bus interface to optimize Burst transfers
• Dedicated low-latency AHB-Lite peripheral bus (AHBP) to connect to peripherals.
The processor supports a set of DSP instructions which allow efficient signal processing and complex algorithm
execution.
It also supports single and double precision FPU (floating point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
Refer to Figure 1. STM32H7B0xB block diagram for the general block diagram of the STM32H7B0xB family.
Note: Cortex®-M7 with FPU core is binary compatible with the Cortex®-M4 core.

3.2 Memory protection unit (MPU)

The memory protection unit (MPU) manages the CPU access rights and the attributes of the system resources.
It has to be programmed and enabled before use. Its main purposes are to prevent an untrusted user program
to accidentally corrupt data used by the OS and/or by a privileged task, but also to protect data processes or
read-protect memory regions.
The MPU defines access rules for privileged accesses and user program accesses. It allows defining up to 16
protected regions that can in turn be divided into up to 8 independent subregions, where region address, size, and
attributes can be configured. The protection area ranges from 32 bytes to 4 Gbytes of addressable memory.
When an unauthorized access is performed, a memory management exception is generated.

3.3 Memories

3.3.1 Embedded flash memory

The STM32H7B0xB devices embed up to 128 Kbytes of flash memory that can be used for storing programs and
data.
The flash memory is organized as 137-bit flash words memory that can be used for storing both code and data
constants. Each word consists of:
• One flash word (4 words, 16 bytes or 128 bits)
• 9 ECC bits.
The Flash memory is organized as follows:
• 128 Kbytes of user Flash memory, containing 16 user sectors of 8 Kbytes each
• 128 Kbytes of System Flash memory from which the device can boot.
• 1 Kbyte of OTP (one-time programmable) memory containing option bytes for user configuration.

DS13196 - Rev 7 page 11/205

 STM32H7B0xB
Boot modes

3.3.2 Secure access mode

In addition to other typical memory protection mechanism (RDP, PCROP), STM32H7B0xB devices embed the
Secure access mode, an enhanced security feature. This mode allows developing user-defined secure services
by ensuring, on the one hand code and data protection and on the other hand code safe execution.
Two types of secure services are available:
• STMicroelectronics Root Secure Services:
These services are embedded in System memory. They provide a secure solution for firmware and third-party
modules installation. These services rely on cryptographic algorithms based on a device unique private key.
• User-defined secure services:
These services are embedded in user flash memory. Examples of user secure services are proprietary user
firmware update solution, secure flash integrity check or any other sensitive applications that require a high level
of protection.
The secure firmware is embedded in specific user flash memory areas configured through option bytes.
Secure services are executed just after a reset and preempt all other applications to guarantee protected and safe
execution. Once executed, the corresponding code and data are no more accessible.
The above secure services are available only for Cortex®-M7 core operating in Secure access mode. The other
masters cannot access the option bytes involved in Secure access mode settings or the flash secured areas.

3.3.3 Embedded SRAM

All devices feature:
• 1 Mbyte of AXI-SRAM mapped onto AXI bus matrix in CPU domain (CD) split into:
– AXI-SRAM1: 256 Kbytes
– AXI-SRAM2: 384 Kbytes
– AXI-SRAM3: 384 Kbytes
• 128 Kbytes of AHB-RAM mapped onto AHB bus matrix in CPU domain (CD) split into:
– AHB-SRAM1: 64 Kbytes
– AHB-SRAM2: 64 Kbytes
• 32 Kbytes of SRD-SRAM mapped in Smart Run Domain (SRD)
• 4 Kbytes of backup SRAM
The content of this area is protected against possible unwanted write accesses, and is retained in Standby or
VBAT mode.
• RAM mapped to TCM interface (ITCM and DTCM):
Both ITCM and DTCM RAMs are 0 wait state memories that are accessible from the CPU or the MDMA (even in
Sleep mode) through a specific AHB slave of the CPU(AHBP).
• 64 Kbytes of ITCM-RAM (instruction RAM)
This RAM is connected to ITCM 64-bit interface designed for execution of critical real-times routines by the CPU.
• 128 Kbytes of DTCM-RAM (2x 64 Kbyte DTCM-RAMs on 2x32-bit DTCM ports)
The DTCM-RAM could be used for critical real-time data, such as interrupt service routines or stack/heap
memory. Both DTCM-RAMs can be used in parallel (for load/store operations) thanks to the Cortex®-M7 dual
issue capability.

3.4 Boot modes

At startup, the boot memory space is selected by the BOOT pin and BOOT_ADDx option bytes, allowing to
program any boot memory address from 0x0000 0000 to 0x3FFF FFFF which includes:
• All flash address space
• All RAM address space: ITCM, DTCM RAMs and SRAMs
• The system memory bootloader
The boot loader is located in non-user System memory. It is used to reprogram the flash memory through a serial
interface (USART, I2C, SPI, USB-DFU, FDCAN). Refer to STM32 microcontroller system memory boot mode
application note (AN2606) for details.

DS13196 - Rev 7 page 12/205

 STM32H7B0xB
Power supply management

3.5 Power supply management

3.5.1 Power supply scheme

• VDD = 1.62 to 3.6 V: external power supply for I/Os, provided externally through VDD pins.
• VDDLDO = 1.62 to 3.6 V: supply voltage for the internal regulator supplying VCORE
• VDDA = 1.62 to 3.6 V: external analog power supplies for ADC, DAC, Reset blocks, RCs and PLL.
• VDD33USB and VDD50USB:
VDD50USB can be supplied through the USB cable to generate the VDD33USB via the USB internal regulator. This
allows supporting a VDD supply different from 3.3 V.
The USB regulator can be bypassed to supply directly VDD33USB if VDD = 3.3 V.
• VDDMMC = 1.62 to 3.6 V external power supply for independent I/Os. VDDMMC can be higher than VDD.
VDDMMC pin should be tied to VDD when it is not used.
• VBAT = 1.2 to 3.6 V: power supply for the VSW domain when VDD is not present.
• VCAP: VCORE supply, which value depends on voltage scaling (0.74 V, 0.9 V, 1.0 V, 1.1 V, 1.2 V or 1.3 V). It
is configured through VOS bits in PWR_CR3 register. The VCORE domain is split into two domains the CPU
domain (CD) and the Smart Run Domain (SRD).
– CD domain containing most of the peripherals and the Arm® Cortex®-M7 core
– SRD domain containing some peripherals and the system control.
• VDDSMPS = 1.62 to 3.6 V: step-down converter power supply
• VLXSMPS = VCORE or 1.8 to 2.5 V: external regulated step-down converter output
• VFBSMPS = VCORE or 1.8 to 2.5 V: external step-down converter feedback voltage sense input
Note: For I/O speed optimization at low VDD supply, refer to Section 3.8 General-purpose input/outputs (GPIOs).
The features available on the device depend on the package (refer to Table 1. STM32H7B0xB features and
peripheral counts).
During power-up and power-down phases, the following power sequence requirements must be respected (see
Figure 2. Power-up/power-down sequence):
• When VDD is below 1 V, other power supplies (VDDA, VDD33USB and VDD50USB) must remain below VDD +
300 mV.
• When VDD is above 1 V, all power supplies are independent (except for VDDSMPS, which must remain at the
same level as VDD).
During the power-down phase, VDD can temporarily become lower than other supplies only if the energy provided
to the microcontroller remains below 1 mJ. This allows external decoupling capacitors to be discharged with
different time constants during the power-down transient phase.

DS13196 - Rev 7 page 13/205

 STM32H7B0xB
Power supply management

Figure 2. Power-up/power-down sequence

3.6
VDDX(1)

VDD

VPOR
VPDR

0.3

Power-on Operating mode Power-down time

Invalid supply area VDDX < VDD + 300 mV VDDX independent from VDD

1. VDDx refers to any power supply among VDDA, VDD33USB and VDD50USB.
2. VDD and VDDSMPS must be wired together into order to follow the same voltage sequence.

3.5.2 Power supply supervisor

The devices have an integrated power-on reset (POR)/ power-down reset (PDR) circuitry coupled with a
Brownout reset (BOR) circuitry:
• Power-on reset (POR)
The POR supervisor monitors VDD power supply and compares it to a fixed threshold. The devices remain in
reset mode when VDD is below this threshold,
• Power-down reset (PDR)
The PDR supervisor monitors VDD power supply. A reset is generated when VDD drops below a fixed
threshold.
The PDR supervisor can be enabled/disabled through PDR_ON pin.
• Brownout reset (BOR)
The BOR supervisor monitors VDD power supply. Three BOR thresholds (from 2.1 to 2.7 V) can be
configured through option bytes. A reset is generated when VDD drops below this threshold.
• Programmable voltage detector (PVD)
The PVD monitors the VDD power supply by comparing it with a threshold selected from a set of predefined
values.
It can also monitor the voltage level of the PVD_IN pin by comparing it with an internal VREFINT voltage
reference level.
• Analog voltage detector (AVD)
The AVD monitors the VDDA power supply by comparing it with a threshold selected from a set of predefined
values.
• VBAT threshold
The VBAT battery voltage level can be monitored by comparing it with two thresholds levels.
• Temperature threshold
A dedicated temperature sensor monitors the junction temperature and compare it with two threshold levels.

DS13196 - Rev 7 page 14/205

 STM32H7B0xB
Low-power modes

3.5.3 Voltage regulator

The same voltage regulator supplies the two power domains (CD and SRD). The CD domain can be
independently switched off.
Voltage regulator output can be adjusted according to application needs through six power supply levels:
• Run mode (VOS0 to VOS3)
– Scale 0 and scale 1: high performance
– Scale 2: medium performance and consumption
– Scale 3: optimized performance and low-power consumption
• Stop mode (SVOS3 to SVOS5)
– Scale 3: peripheral with wakeup from stop mode capabilities (UART, SPI, I2C, LPTIM) are operational
– Scale 4 and 5 where the peripheral with wakeup from Stop mode is disabled
The peripheral functionality is disabled but wakeup from Stop mode is possible through GPIO or
asynchronous interrupt.

3.5.4 SMPS step-down converter

The built-in SMPS step-down converter is a highly power-efficient DC/DC non-linear switching regulator that
provides lower power consumption than a conventional voltage regulator (LDO).
The step-down converter can be used to:
• Directly supply the VCORE domain
– the SMPS step-down converter operating modes follow the device system operating modes (Run,
Stop, Standby).
– the SMPS step-down converter output voltage are set according to the selected VOS and SVOS bits
(voltage scaling)
• Provide intermediate voltage level to supply the internal voltage regulator (LDO)
– The SMPS step-down converter operating modes follow the device system operating modes (Run,
Stop, Standby).
– The SMPS step-down converter output equals 1.8 V or 2.5 V according to the selected step-down level
• Provide an external supply
– The SMPS step-down converter is forced to external operating mode
– The SMPS step-down converter output equals 1.8 V or 2.5 V according to the selected step-down level
The 1.8 V or 2.5 V SMPS step-down converter output voltage imposes a minimum VDDSMPS supply of 2.5 V or
3.3 V, respectively. It defines indirectly the minimum VDD supply and I/O level.

3.6 Low-power modes

There are several ways to reduce power consumption on STM32H7B0xB:
• Decrease dynamic power consumption by slowing down the system clocks even in Run mode and
individually clock gating the peripherals that are not used.
• Save power consumption when the CPU is idle, by selecting among the available low-power mode
according to the user application needs. This allows achieving the best compromise between short startup
time, low-power consumption, as well as available wakeup sources.
The devices feature several low-power modes:
• System Run with CSleep (CPU clock stopped)
• Autonomous with CD domain in DStop (CPU and CPU Domain bus matrix clocks stopped)
• Autonomous with CD domain in DStop2 (CPU and CPU Domain bus matrix clocks stopped, CPU domain in
retention mode)
• System Stop (SRD domain clocks stopped) and CD domain in DStop (CPU and CPU Domain bus matrix
clocks stopped)
• System Stop (SRD domain clocks stopped) and CD domain in DStop2 (CPU and CPU Domain bus matrix
clocks stopped, CPU domain in retention mode)
• Standby (System, CD and SRD domains powered down)

DS13196 - Rev 7 page 15/205

 STM32H7B0xB
Reset and clock controller (RCC)

CSleep and CStop low-power modes are entered by the MCU when executing the WFI (Wait for Interrupt) or WFE
(Wait for Event) instructions, or when the SLEEPONEXIT bit of the Cortex®-M7 core is set after returning from an
interrupt service routine.
The CPU domain can enter low-power mode (DStop or DStop2) when the processor, its subsystem and the
peripherals allocated in the domain enter low-power mode.
If part of the domain is not in low-power mode, the domain remains in the current mode.
Finally the system can enter Stop or Standby when all EXTI wakeup sources are cleared and the power domains
are in DStop or DStop2 mode.

Table 2. System vs domain low-power mode

System power mode CD domain power mode SRD domain power mode

Run DRun/DStop/DStop2 DRun

Stop DStop/DStop2 DStop
Standby Standby Standby

Some GPIO pins can be used to monitor CPU and domain power states:

Table 3. Overview of low-power mode monitoring pins

Power state monitoring pins Description

PWR_CSLEEP CPU clock OFF

PWR_CSTOP CPU domain in low-power mode
PWR_NDSTOP2 CPU domain retention mode selection

3.7 Reset and clock controller (RCC)

The clock and reset controller is located in the SRD domain. The RCC manages the generation of all the clocks,
as well as the clock gating and the control of the system and peripheral resets. It provides a high flexibility in the
choice of clock sources and allows to apply clock ratios to improve the power consumption. In addition, on some
communication peripherals that are capable to work with two different clock domains (either a bus interface clock
or a kernel peripheral clock), the system frequency can be changed without modifying the baud rate.

3.7.1 Clock management

The devices embed four internal oscillators, two oscillators with external crystal or resonator, two internal
oscillators with fast startup time and three PLLs.
The RCC receives the following clock source inputs:
• Internal oscillators:
– 64 MHz HSI clock (1% accuracy)
– 48 MHz RC oscillator
– 4 MHz CSI clock
– 32 kHz LSI clock
• External oscillators:
– 4-50 MHz HSE clock
– 32.768 kHz LSE clock
The RCC provides three PLLs: one for system clock, two for kernel clocks.
The system starts on the HSI clock. The user application can then select the clock configuration.
A high precision can be achieved for the 48 MHz clock by using the embedded clock recovery system (CRS). It
uses the USB SOF signal, the LSE or an external signal (SYNC) to fine tune the oscillator frequency on-the- fly.

DS13196 - Rev 7 page 16/205

 STM32H7B0xB
General-purpose input/outputs (GPIOs)

3.7.2 System reset sources

Power-on reset initializes all registers while system reset reinitializes the system except for the debug, part of the
RCC and power controller status registers, as well as the backup power domain.
A system reset is generated in the following cases:
• Power-on reset (pwr_por_rst)
• Brownout reset
• Low level on NRST pin (external reset)
• Window watchdog
• Independent watchdog
• Software reset
• Low-power mode security reset
• Exit from Standby

3.8 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain, with or without pull-up
or pull-down), as input (floating, with or without pull-up or pull-down) or as peripheral alternate function. Most of
the GPIO pins are shared with digital or analog alternate functions. All GPIOs are high-current-capable and have
speed selection to better manage internal noise, power consumption and electromagnetic emission.
After reset, all GPIOs are in Analog mode to reduce power consumption.
The I/O configuration can be locked if needed by following a specific sequence in order to avoid spurious writing
to the I/Os registers.
To maximize the performance, the I/O high-speed feature, HSLV, must be activated at low device supply voltage.
This is needed to achieve the performance required for peripherals such as the SDMMC, FMC and OCTOSPI.
The GPIOs are divided into four groups which can be optimized separately (refer to the description of HSLVx bits
of SYSCFG_CCCSR register in RM0455).
The I/O high-speed feature must be used only when VDD is lower than 2.7 V, and both the HSLV user option bits
(VDDIO_HSLV and VDDMMC_HSLV) and HSLVx bits must be set to enable it (refer to RM0455 for details).

DS13196 - Rev 7 page 17/205

 3.9 Bus-interconnect matrix
DS13196 - Rev 7

The devices feature an AXI bus matrix, two AHB bus matrices and bus bridges that allow interconnecting bus masters with bus slaves (see
Figure 3. STM32H7B0xB bus matrix).

Figure 3. STM32H7B0xB bus matrix

AHBS

CPU ITCM
Cortex-M7 64 Kbytes
I$ D$ DTCM
16KB 16KB 128 Kbytes
DMA1 DMA2 SDMMC2 USBHS1 BDMA1
AXIM

AHBP

DMA1_PERIPH

DMA2_PERIPH
DMA2_MEM
DMA1_MEM
SDMMC1 MDMA DMA2D LTDC
AXI to AHB

AHB SRAM1
64 Kbytes
GFX-MMU AHB SRAM2 64
Kbytes

AHB3 APB3
AHB1

Flash AHB2
memory
128 Kbytes
APB1

FMC APB2

OTFDEC1 OCTOSPI1

OTFDEC2 OCTOSPI2

AXI SRAM1
256 Kbytes
AXI SRAM2
384 Kbytes 32-bit AHB bus matrix
AXI SRAM3 CD domain
384 Kbytes
64-bit AXI bus matrix
CD domain

CD-to-SRD AHB BDMA2

Legend

Bus-interconnect matrix
TCM AHB AHB4 APB4
32-bit bus

STM32H7B0xB
AXI APB
SRD SRAM
64-bit bus Master interface 32 Kbytes
Bus multiplexer Slave interface Backup
32-bit AHB bus matrix SRAM
4 Kbytes
SRD domain
page 18/205
 STM32H7B0xB
DMA controllers

3.10 DMA controllers

The devices feature five DMA instances to unload CPU activity:
• A master direct memory access (MDMA)
The MDMA is a high-speed DMA controller, which is in charge of all types of memory transfers (peripheral to
memory, memory to memory, memory to peripheral), without any CPU action. It features a master AXI interface
and a dedicated AHB interface to access Cortex®-M7 TCM memories.
The MDMA is located in the CD domain. It is able to interface with the other DMA controllers located in this
domain to extend the standard DMA capabilities, or can manage peripheral DMA requests directly.
Each of the 16 channels can perform single block transfers, repeated block transfers and linked list transfers.
• Two dual-port DMAs (DMA1, DMA2) located in the CD domain and connected to the AHB matrix, with FIFO
and request router capabilities.
• One basic DMA (BDMA1) located in the CD domain and connected to the AHB matrix. This DMA is
dedicated to the DFSDM (see Section 3.26 Digital filter for sigma-delta modulators (DFSDM))
• One basic DMA (BDMA2) located in the SRD domain, with request router capabilities.
The DMA request router could be considered as an extension of the DMA controller. It routes the DMA peripheral
requests to the DMA controller itself. This allowing managing the DMA requests with a high flexibility, maximizing
the number of DMA requests that run concurrently, as well as generating DMA requests from peripheral output
trigger or DMA event.

3.11 Chrom-ART Accelerator (DMA2D)

The Chrom-Art Accelerator (DMA2D) is a graphical accelerator which offers advanced bit blitting, row data copy
and pixel format conversion. It supports the following functions:
• Rectangle filling with a fixed color
• Rectangle copy
• Rectangle copy with pixel format conversion
• Rectangle composition with blending and pixel format conversion
Various image format coding are supported, from indirect 4bpp color mode up to 32bpp direct color. It embeds
dedicated memory to store color lookup tables. The DMA2D also supports block based YCbCr to handle JPEG
decoder output.
An interrupt can be generated when an operation is complete or at a programmed watermark.
All the operations are fully automatized and are running independently from the CPU or the DMAs.

3.12 Chrom-GRC™ (GFXMMU)

The Chrom-GRC™ is a graphical oriented memory management unit aimed at:
• Optimizing memory usage according to the display shape
• Manage cache linear accesses to the frame buffer
• Prefetch data
The display shape is programmable to store only the visible image pixels.
A virtual memory space is provided which is seen by all system masters and can be physically mapped to any
system memory.
An interrupt can be generated in case of buffer overflow or memory transfer error.

3.13 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller which is able to manage 16 priority levels, and handle
up to 150 maskable interrupt channels plus the 16 interrupt lines of the Cortex®-M7 with FPU core.
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor context automatically saved

DS13196 - Rev 7 page 19/205

 STM32H7B0xB
Extended interrupt and event controller (EXTI)

• Interrupt entry restored on interrupt exit with no instruction overhead

This hardware block provides flexible interrupt management features with minimum interrupt latency.

3.14 Extended interrupt and event controller (EXTI)

The EXTI controller performs interrupt and event management. In addition, it can wake up the processor, power
domains and/or SRD domain from Stop mode.
The EXTI handles up to 89 independent event/interrupt lines split into 28 configurable events and 61 direct
events.
Configurable events have dedicated pending flags, active edge selection, and software trigger capable.
Direct events provide interrupts or events from peripherals having a status flag.

3.15 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a programmable polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or storage integrity. In
the scope of the EN/IEC 60335-1 standard, they offer a means of verifying the flash memory integrity. The CRC
calculation unit helps compute a signature of the software during runtime, to be compared with a reference
signature generated at link-time and stored at a given memory location.

3.16 Flexible memory controller (FMC)

The FMC controller main features are the following:
• Interface with static-memory mapped devices including:
– Static random access memory (SRAM)
– NOR flash memory/OneNAND flash memory
– PSRAM (4 memory banks)
– NAND flash memory with ECC hardware to check up to 8 Kbytes of data
• Interface with synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) memories
• 8-,16-,32-bit data bus width
• Independent Chip Select control for each memory bank
• Independent configuration for each memory bank
• Write FIFO
• Read FIFO for SDRAM controller
• The maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is the FMC kernel clock
divided by 2.

3.17 Octo-SPI memory interface (OCTOSPI)

The OCTOSPI is a specialized communication interface targeting single, dual, quad or octal SPI memories.
The STM32H7B0xB embeds two separate Octo-SPI interfaces.
Each OCTOSPI instance supports single/dual/quad/octal SPI formats.
Multiplex of single/dual/quad/octal SPI over the same bus can be achieved using the integrated I/O manager.
The OCTOSPI can operate in any of the three following modes:
• Indirect mode: all the operations are performed using the OCTOSPI registers
• Status-polling mode: the external memory status register is periodically read and an interrupt can be
generated in case of flag setting
• Memory-mapped mode: the external memory is memory mapped and it is seen by the system as if it was an
internal memory supporting both read and write operations.
The OCTOSPI support two frame formats supported by most external serial memories such as serial PSRAMs,
serial NOR flash memories, Hyper RAMs and Hyper flash memories:
• The classical frame format with the command, address, alternate byte, dummy cycles and data phase
• The HyperBus™ frame format.
Multichip package (MCP) combining any of the above mentioned memory types can also be supported.

DS13196 - Rev 7 page 20/205

 STM32H7B0xB
Analog-to-digital converters (ADCs)

3.18 Analog-to-digital converters (ADCs)

The STM32H7B0xB devices embed two analog-to-digital converters, whose resolution can be configured to 16,
14, 12, 10 or 8 bits. Each ADC shares up to 24 external channels, performing conversions in the single-shot or
scan mode. In scan mode, automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
• Simultaneous sample and hold
• Interleaved sample and hold
The ADC can be served by the DMA controller, thus allowing to automatically transfer ADC converted values to a
destination location without any software action.
In addition, an analog watchdog feature can accurately monitor the converted voltage of one, some or all selected
channels. An interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1, TIM2, TIM3, TIM4, TIM6,
TIM8, TIM15, and LPTIM1 timers.

3.19 Analog temperature sensor

The STM32H7B0xB embeds an analog temperature sensor that generates a voltage (VTS) that varies linearly
with the temperature. This temperature sensor is internally connected to ADC2_IN18. The conversion range is
between 1.7 V and 3.6 V. It can measure the device junction temperature ranging from −40 to +125 °C.
The temperature sensor have a good linearity, but it has to be calibrated to obtain a good overall accuracy of the
temperature measurement. As the temperature sensor offset varies from chip to chip due to process variation,
the uncalibrated internal temperature sensor is suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is individually factory-calibrated
by ST. The temperature sensor factory calibration data are stored by ST in the System memory area, which is
accessible in read-only mode.

3.20 Digital temperature sensor (DTS)

The STM32H7B0xB embeds a sensor that converts the temperature into a square wave which frequency
is proportional to the temperature. The PCLK or the LSE clock can be used as reference clock for the
measurements. A formula given in the product reference manual (RM0455) allows to calculate the temperature
according to the measured frequency stored in the DTS_DR register.

3.21 VBAT operation

The VBAT power domain contains the RTC, the backup registers and the backup SRAM.
To optimize battery duration, this power domain is supplied by VDD when available or by the voltage applied on
VBAT pin (when VDD supply is not present). VBAT power is switched when the PDR detects that VDD dropped
below the PDR level.
The voltage on the VBAT pin could be provided by an external battery, a supercapacitor or directly by VDD, in
which case, the VDD mode is not functional.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
The devices embed an internal VBAT battery charging circuitry that can be activated when VDD is present.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events do not exit it from
VBAT operation.
When PDR_ON pin is connected to VSS (Internal Reset OFF), the VBAT functionality is no more available and
VBAT pin should be connected to VDD.

3.22 Digital-to-analog converters (DAC)

The devices features one dual-channel DAC (DAC1), located in the CD domain, plus one single-channel DAC
(DAC2), located in the SRD domain.
The three 12-bit buffered DAC channels can be used to convert three digital signals into three analog voltage
signal outputs.
The following feature are supported:

DS13196 - Rev 7 page 21/205

 STM32H7B0xB
Voltage reference buffer (VREFBUF)

• three DAC converters: one for each output channel

• 8-bit or 12-bit monotonic output
• left or right data alignment in 12-bit mode
• synchronized update capability
• noise-wave generation
• triangular-wave generation
• Triple DAC channel independent or simultaneous conversions
• DMA capability for each channel including DMA underrun error detection
• external triggers for conversion
• input voltage reference VREF+ or internal VREFBUF reference.
The DAC channels are triggered through the timer update outputs that are also connected to different DMA
streams.

3.23 Voltage reference buffer (VREFBUF)

The built-in voltage reference buffer can be used as voltage reference for ADCs and DACs, as well as voltage
reference for external components through the VREF+ pin.
Five different voltages are supported (refer to the reference manual for details).

3.24 Ultra-low-power comparators (COMP)

The STM32H7B0xB devices embed two rail-to-rail comparators (COMP1 and COMP2). They feature
programmable reference voltage (internal or external), hysteresis and speed (low speed for low-power) as well as
selectable output polarity.
The reference voltage can be one of the following:
• An external I/O
• A DAC output channel
• An internal reference voltage or submultiple (1/4, 1/2, 3/4)
• The analog temperature sensor
• The VBAT/4 supply.
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers, and be combined
into a window comparator.

3.25 Operational amplifiers (OPAMP)

The STM32H7B0xB devices embed two rail-to-rail operational amplifiers (OPAMP1 and OPAMP2) with external
or internal follower routing and PGA capability, and two inputs and one output each. These three I/Os can be
connected to the external pins, thus enabling any type of external interconnections. The operational amplifiers
can be configured internally as a follower, as an amplifier with a non-inverting gain ranging from 2 to 16 or with
inverting gain ranging from -1 to -15.
The operational amplifier main features are:
• PGA with a non-inverting gain ranging of 2, 4, 8 or 16 or inverting gain ranging of -1, -3, -7 or -15
• Up to two positive inputs connected to DAC
• Output connected to internal ADC
• Low input bias current down to 1 nA
• Low input offset voltage down to 1.5 mV
• Gain bandwidth up to 8 MHz
The devices embed two operational amplifiers (OPMAP1 and OPAMP2) with two inputs and one output each.
These three I/Os can be connected to the external pins, thus enabling any type of external interconnections. The
operational amplifiers can be configured internally as a follower, as an amplifier with a non-inverting gain ranging
from 2 to 16 or with inverting gain ranging from -1 to -15.

3.26 Digital filter for sigma-delta modulators (DFSDM)

The device embeds two DFSDM interfaces:

DS13196 - Rev 7 page 22/205

 STM32H7B0xB
Digital filter for sigma-delta modulators (DFSDM)

• DSFDM1
It is located in the CD domain and features eight external digital serial interfaces (channels) and eight digital
filters, or alternately eight internal parallel inputs.
• DSFDM2
It is located in the SRD domain. DFSDM2 is a lite version including two external digital serial interfaces
(channels) and one digital filters.
The DFSDM peripherals interface the external Σ∆ modulators to microcontroller and then perform digital filtering
of the received data streams (which represent analog value on Σ∆ modulators inputs). DFSDMs can also interface
PDM (Pulse Density Modulation) microphones and perform PDM to PCM conversion and filtering in hardware.
The DFSDMs feature optional parallel data stream inputs from internal ADC peripherals or microcontroller
memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆ modulators). DFSDM digital
filter modules perform digital processing according user selected filter parameters with up to 24-bit final ADC
resolution.
The DFSDM peripherals support:
• Multiplexed input digital serial channels:
– configurable SPI interface to connect various SD modulator(s)
– configurable Manchester coded 1 wire interface support
– PDM (Pulse Density Modulation) microphone input support
– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
– clock output for SD modulator(s): 0..20 MHz
• Alternative inputs from eight internal digital parallel channels (up to 16 bit input resolution):
– internal sources: ADC data or memory data streams (DMA)
• Digital filter modules with adjustable digital signal processing:
– Sincx filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
– integrator: oversampling ratio (1..256)
• Up to 24-bit output data resolution, signed output data format
• Automatic data offset correction (offset stored in register by user)
• Continuous or single conversion
• Start-of-conversion triggered by:
– software trigger
– internal timers
– external events
– start-of-conversion synchronously with first digital filter module (DFSDM0)
• Analog watchdog feature:
– low value and high value data threshold registers
– dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
– input from final output data or from selected input digital serial channels
– continuous monitoring independently from standard conversion
• Short circuit detector to detect saturated analog input values (bottom and top range):
– up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
– monitoring continuously each input serial channel
• Break signal generation on analog watchdog event or on short circuit detector event
• Extremes detector:
– storage of minimum and maximum values of final conversion data
– refreshed by software
• DMA capability to read the final conversion data
• Interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial channel clock absence

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 STM32H7B0xB
Digital camera interface (DCMI)

• “Regular” or “injected” conversions:

– “regular” conversions can be requested at any time or even in continuous mode without having any
impact on the timing of “injected” conversions
– “injected” conversions for precise timing and with high conversion priority

3.27 Digital camera interface (DCMI)

The devices embed a camera interface that can connect with camera modules and CMOS sensors through an
8-bit to 14-bit parallel interface, to receive video data. The camera interface can achieve a data transfer rate up to
140 Mbyte/s using a 80 MHz pixel clock. It features:
• Programmable polarity for the input pixel clock and synchronization signals
• Parallel data communication can be 8-, 10-, 12- or 14-bit
• Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2 progressive video, RGB
565 progressive video or compressed data (like JPEG)
• Supports continuous mode or snapshot (a single frame) mode
• Capability to automatically crop the image

3.28 Parallel synchronous slave interface (PSSI)

The PSSI is a generic synchronous 8-/16-bit parallel data input/output slave interface. It allows the transmitter
to send a data valid signal to indicate when the data is valid, and the receiver to output a flow control signal to
indicate when it is ready to sample the data.
The PSSI main features are:
• Slave mode operation
• 8- or 16-bit parallel data input or output
• 8-word (32-byte) FIFO
• Data enable (DE) alternate function input and Ready (RDY) alternate function output.
When enabled, these signals can either allow the transmitter to indicate when the data is valid or the receiver to
indicate when it is ready to sample the data, or both.
The PSSI shares most of the circuitry with the digital camera interface (DCMI). It thus cannot be used
simultaneously with the DCMI.

3.29 LCD-TFT display controller (LTDC)

The LCD-TFT display controller provides a 24-bit parallel digital RGB (Red, Green, Blue) and delivers all signals
to interface directly to a broad range of LCD and TFT panels up to XGA (1024x768) resolution with the following
features:
• 2 display layers with dedicated FIFO (64x32-bit)
• Color Look-Up table (CLUT) up to 256 colors (256x24-bit) per layer
• Up to 8 input color formats selectable per layer
• Flexible blending between two layers using alpha value (per pixel or constant)
• Flexible programmable parameters for each layer
• Color keying (transparency color)
• Up to 4 programmable interrupt events
• AXI master interface with burst of 16 words

3.30 JPEG codec (JPEG)

The JPEG codec can encode and decode a JPEG stream as defined in the
ISO/IEC10918-1 specification. It provides an fast and simple hardware compressor and decompressor of JPEG
images with full management of JPEG headers.
The JPEG codec main features are as follows:
• 8-bit/channel pixel depths
• Single clock per pixel encoding and decoding
• Support for JPEG header generation and parsing

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 STM32H7B0xB
True random number generator (RNG)

• Up to four programmable quantization tables

• Fully programmable Huffman tables (two AC and two DC)
• Fully programmable minimum coded unit (MCU)
• Encode/decode support (non simultaneous)
• Single clock Huffman coding and decoding
• Two-channel interface: Pixel/Compress In, Pixel/Compressed Out
• Stallable design
• Support for single greyscale component
• Ability to enable/disable header processing
• Internal register interface
• Fully synchronous design
• Configuration for high-speed decode mode

3.31 True random number generator (RNG)

All devices embed an RNG that delivers 32-bit random numbers generated by an integrated analog circuit. The
RNG is a true random number generator that provides full entropy outputs to the application as 32-bit samples. It
is composed of a live entropy source (analog) and an internal conditioning component.

3.32 Cryptographic acceleration (CRYP and HASH)

The devices embed a cryptographic processor that supports the advanced cryptographic algorithms usually
required to ensure confidentiality, authentication, data integrity and non-repudiation when exchanging messages
with a peer:
• Encryption/Decryption
– DES/TDES (data encryption standard/triple data encryption standard): ECB (electronic codebook) and
CBC (cipher block chaining) chaining algorithms, 64-, 128- or 192-bit key
– AES (advanced encryption standard): ECB, CBC, GCM, CCM, and CTR (counter mode) chaining
algorithms, 128, 192 or 256-bit key
• Universal HASH
– SHA-1 and SHA-2 (secure HASH algorithms)
– MD5
– HMAC
The cryptographic accelerator supports DMA request generation.

3.33 On-the-fly decryption engine (OTFDEC)

The embedded OTFDEC decrypts in real-time the encrypted content stored in the external Octo-SPI memories
used in Memory-mapped mode.
The OTFDEC uses the AES-128 algorithm in counter mode (CTR).
Code execution on external Octo-SPI memories can be protected against fault injection thanks to
STMicroelectronics enhanced encryption mode (refer to RM0455 for details).
The OTFDEC main features are as follow:
• On-the-fly 128-bit decryption during STM32 Octo-SPI read operations (single or multiple).
– AES-CTR algorithm with keystream FIFO (depth= 4)
– Support for any read size
• Up to four independent encrypted regions
– Region definition granularity: 4096 bytes
– Region configuration write locking mechanism
– Two optional decryption modes: execute-only and execute-never
• 128-bit key for each region, two-byte firmware version, and eight-byte application-defined nonce
• Encryption keys confidentiality and integrity protection
– Write only registers with software locking mechanism
– Availability of 8-bit CRC as public key information

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 STM32H7B0xB
Timers and watchdogs

• Support for STM32 Octo-SPI prefetching mechanism.

• Encryption mode

3.34 Timers and watchdogs

The devices include two advanced-control timers, ten general-purpose timers, two basic timers, three low-power
timers, two watchdogs and a SysTick timer.
All timer counters can be frozen in Debug mode.
Table 4. Timer feature comparison compares the features of the advanced-control, general-purpose and basic
timers.

Table 4. Timer feature comparison

Max
Capture/ Max
DMA Comple- timer
Counter Counter interface
Timer type Timer Prescaler factor request compare mentary clock
resolution type clock
generation channels output (MHz)
(MHz) (1)

Any integer
Advanced- TIM1, Up, Down,
16-bit between 1 and Yes 4 Yes 140 280
control TIM8 Up/down
65536
Any integer
TIM2, Up, Down,
32-bit between 1 and Yes 4 No 140 280
TIM5 Up/down
65536
Any integer
TIM3, Up, Down,
16-bit between 1 and Yes 4 No 140 280
TIM4 Up/down
65536
Any integer
TIM12 16-bit Up between 1 and No 2 No 140 280
General 65536
purpose Any integer
TIM13,
16-bit Up between 1 and No 1 No 140 280
TIM14
65536
Any integer
TIM15 16-bit Up between 1 and Yes 2 1 140 280
65536
Any integer
TIM16,
16-bit Up between 1 and Yes 1 1 140 280
TIM17
65536
Any integer
TIM6,
Basic 16-bit Up between 1 and Yes 0 No 140 280
TIM7
65536
LPTIM1,
Low-power 1, 2, 4, 8, 16, 32,
LPTIM2, 16-bit Up No 0 No 140 280
timer 64, 128
LPTIM3

1. The maximum timer clock is up to 280 MHz depending on TIMPRE bit in the RCC_CFGR register and CDPRE1/2 bits in RCC_CDCFGR
register.

3.34.1 Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators multiplexed on 6
channels. They have complementary PWM outputs with programmable inserted dead times. They can also be
considered as complete general-purpose timers. Their 4 independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge- or center-aligned modes)
• One-pulse mode output

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 STM32H7B0xB
Timers and watchdogs

If configured as standard 16-bit timers, they have the same features as the general-purpose TIMx timers. If
configured as 16-bit PWM generators, they have full modulation capability (0-100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link feature for synchronization
or event chaining.
The advanced-control timers support independent DMA request generation.

3.34.2 General-purpose timers (TIMx)

There are ten synchronizable general-purpose timers embedded in the STM32H7B0xB devices (see
Table 4. Timer feature comparison for differences).
• TIM2, TIM3, TIM4 and TIM5
The devices include 4 full-featured general-purpose timers: TIM2, TIM3, TIM4 and TIM5. TIM2 and TIM5
are based on a 32-bit auto-reload up/downcounter and a 16-bit prescaler while TIM3 and TIM4 are based
on a 16-bit auto-reload up/downcounter and a 16-bit prescaler. All timers feature 4 independent channels
for input capture/output compare, PWM or one-pulse mode output. This gives up to 16 input capture/output
compare/PWMs on the largest packages.
TIM2, TIM3, TIM4 and TIM5 general-purpose timers can work together, or with the other general-purpose
timers and the advanced-control timers (TIM1, TIM8) via the Timer Link feature for synchronization or event
chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4 and TIM5 all have independent DMA request generation. They are capable of handling
quadrature (incremental) encoder signals and the digital outputs from 1 to 4 hall-effect sensors.
• TIM12, TIM13, TIM14, TIM15, TIM16 and TIM17
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler. TIM13, TIM14, TIM16 and
TIM17 feature one independent channel, whereas TIM12 and TIM15 have two independent channels for
input capture/output compare, PWM or one-pulse mode output. They can be synchronized with the TIM2,
TIM3, TIM4 and TIM5 full-featured general-purpose timers or used as simple time bases.

3.34.3 Basic timers (TIM6 and TIM7)

These timers are mainly used for DAC trigger and waveform generation. They can also be used as a generic
16-bit time base.
TIM6 and TIM7 support independent DMA request generation.

3.34.4 Low-power timers (LPTIM1, LPTIM2, LPTIM3)

The low-power timers feature an independent clock and are running also in Stop mode if they are clocked by LSE,
LSI or an external clock. The low-power timers are able to wakeup the devices from Stop mode.
The low-power timers support the following features:
• 16-bit up counter with 16-bit autoreload register
• 16-bit compare register
• Configurable output: pulse, PWM
• Continuous / one-shot mode
• Selectable software / hardware input trigger
• Selectable clock source:
• Internal clock source: LSE, LSI, HSI or APB clock
• External clock source over LPTIM input (working even with no internal clock source running, used by the
Pulse Counter Application)
• Programmable digital glitch filter
• Encoder mode

3.34.5 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is clocked from an
independent 32 kHz internal RC and as it operates independently from the main clock, it can operate in Stop
and Standby modes. It can be used either as a watchdog to reset the device when a problem occurs, or as a
free-running timer for application timeout management. It is hardware- or software-configurable through the option
bytes.

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 STM32H7B0xB
Real-time clock (RTC)

3.34.6 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It can be used as a
watchdog to reset the device when a problem occurs. It is clocked from the main clock. It has an early warning
interrupt capability and the counter can be frozen in debug mode.

3.34.7 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard downcounter. It
features:
• A 24-bit downcounter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source.

3.35 Real-time clock (RTC)

The RTC is an independent BCD timer/counter. It supports the following features:
• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date, month, year, in BCD
(binary-coded decimal) format.
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
• Two programmable alarms.
• On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to synchronize it with a master
clock.
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be used to enhance the
calendar precision.
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal inaccuracy.
• Timestamp feature which can be used to save the calendar content. This function can be triggered by an
event on the timestamp pin, or by a tamper event, or by a switch to VBAT mode.
• 17-bit auto-reload wakeup timer (WUT) for periodic events with programmable resolution and period.
The RTC is supplied through a switch that takes power either from the VDD supply when present or from the VBAT
pin.
The RTC clock sources can be:
• A 32.768 kHz external crystal (LSE)
• An external resonator or oscillator (LSE)
• The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
• The high-speed external clock (HSE) divided by 32.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the LSE. When clocked by
the LSI, the RTC is not functional in VBAT mode, but is functional in all low-power modes.
All RTC events (Alarm, Wakeup Timer, Timestamp or Tamper) can generate an interrupt and wakeup the device
from the low-power modes.

3.36 Tamper and backup registers (TAMP)

The TAMP main features are the following:
• 32 backup registers:
– The backup registers (TAMP_BKPxR) are implemented in the RTC domain that remains powered-on
by VBAT when the VDD power is switched off.
• Three external tamper detection events
– Each external event can be configured to be active or passive
– External passive tampers with configurable filter and internal pull-up
• Seven internal tamper events
• Any tamper detection can generate an RTC timestamp event
• Any tamper detection can erase the RTC backup registers, the backup SRAM and the memory regions
protected by the on-the-fly decryption engine (OTFDEC)

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 STM32H7B0xB
Inter-integrated circuit interface (I2C)

• Monotonic counter

3.37 Inter-integrated circuit interface (I2C)

The STM32H7B0xB embed four I2C interfaces.
The I2C bus interface handles communications between the microcontroller and the serial I2C bus. It controls all
I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
• I2C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bit rate up to 100 kbit/s
– Fast-mode (Fm), with a bit rate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bit rate up to 1 Mbit/s and 20 mA output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Optional clock stretching
• System management bus (SMBus) specification rev 2.0 compatibility:
– Hardware PEC (packet error checking) generation and verification with ACK control
– Address resolution protocol (ARP) support
– SMBus alert
• Power system management protocol (PMBus®) specification rev 1.1 compatibility
• Independent clock: a choice of independent clock sources allowing the I2C communication speed to be
independent from the PCLK reprogramming.
• Wakeup from Stop mode on address match
• Programmable analog and digital noise filters
• 1-byte buffer with DMA capability

3.38 Universal synchronous/asynchronous receiver transmitter (USART)

The STM32H7B0xB devices have five embedded universal synchronous receiver transmitters (USART1,
USART2, USART3, USART6 and USART10) and five universal asynchronous receiver transmitters (UART4,
UART5, UART7, UART8 and UART9). Refer to the table below for a summary of USARTx and UARTx features.
These interfaces provide asynchronous communication, IrDA SIR ENDEC support, multiprocessor
communication mode, single-wire half-duplex communication mode and have LIN Master/Slave capability. They
provide hardware management of the CTS and RTS signals, and RS485 Driver Enable. They are able to
communicate at speeds of up to 10Mbit/s.
USART1, USART2, USART3, USART6 and USART10 also provide Smartcard mode (ISO 7816 compliant) and
SPI-like communication capability.
The USARTs embed a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO mode is enabled by
software and is disabled by default.
All USART have a clock domain independent from the CPU clock, allowing the USARTx to wake up the MCU
from Stop mode.The wakeup from Stop mode are programmable and can be done on:
• Start bit detection
• Any received data frame
• A specific programmed data frame
• Specific TXFIFO/RXFIFO status when FIFO mode is enabled.
All USART interfaces can be served by the DMA controller.

Table 5. USART features

X = supported.
USART modes/features USART1/2/3/6/10 UART4/5/7/8/9

Hardware flow control for modem X X

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 STM32H7B0xB
Low-power universal asynchronous receiver transmitter (LPUART)

USART modes/features USART1/2/3/6/10 UART4/5/7/8/9

Continuous communication using DMA X X

Multiprocessor communication X X
Synchronous mode (Master/Slave) X -
Smartcard mode X -
Single-wire Half-duplex communication X X
IrDA SIR ENDEC block X X
LIN mode X X
Dual clock domain and wakeup from low power mode X X
Receiver timeout interrupt X X
Modbus communication X X
Auto baud rate detection X X
Driver Enable X X
USART data length 7, 8 and 9 bits
Tx/Rx FIFO X X
Tx/Rx FIFO size 16

3.39 Low-power universal asynchronous receiver transmitter (LPUART)

The device embeds one Low-power UART (LPUART1). The LPUART supports asynchronous serial
communication with minimum power consumption. It supports half duplex single wire communication and modem
operations (CTS/RTS). It allows multiprocessor communication.
The LPUART embeds a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO mode is enabled by
software and is disabled by default.
The LPUART has a clock domain independent from the CPU clock, and can wakeup the system from Stop mode.
The wakeup from Stop mode are programmable and can be done on:
• Start bit detection
• Any received data frame
• A specific programmed data frame
• Specific TXFIFO/RXFIFO status when FIFO mode is enabled.
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600 baud. Therefore, even
in Stop mode, the LPUART can wait for an incoming frame while having an extremely low energy consumption.
Higher speed clock can be used to reach higher baud rates.
LPUART interface can be served by the DMA controller.

3.40 Serial peripheral interfaces (SPI)/integrated interchip sound interfaces (I2S)

The devices feature up to six SPIs (SPI1/I2S1, SPI2/I2S2, SPI3/I2S3, SPI6/I2S6 and SPI4, SPI5) that allow
communicating up to 125 Mbits/s in master and slave modes, in half-duplex, full-duplex and simplex modes. The
3-bit prescaler gives 8 master mode frequencies and the frame is configurable from 4 to 32 bits for SPI1/I2S1,
SPI2/I2S2, SPI3/I2S3, from 4 to 16 bits for the others. All SPI interfaces support SS pulse mode, TI mode,
Hardware CRC calculation, and 16x 8-bit embedded Rx and Tx FIFOs (SPI1/I2S1, SPI2/I2S2, SPI3/I2S3) or 8x
8-bit embedded Rx and Tx FIFOs (SPI4, SPI5, SPI6/I2S6), all with DMA capability. .
Four standard I2S interfaces (multiplexed with SPI1, SPI2, SPI3, SPI6) are available. They can be operated in
master or slave mode, in simplex communication modes, and can be configured to operate with a 16-/32-bit
resolution as an input or output channel. Audio sampling frequencies from 8 kHz up to 192 kHz are supported.
When one or all I2S interfaces is/are configured in master mode, the master clock can be output to the external
DAC/codec at 256 times the sampling frequency. All I2S interfaces support 16x 8-bit embedded Rx and Tx FIFOs
with DMA capability.

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 STM32H7B0xB
Serial audio interfaces (SAI)

3.41 Serial audio interfaces (SAI)

The devices embed two SAIs (SAI1, SAI2) that allow designing many stereo or mono audio protocols such as
I2S, LSB or MSB-justified, PCM/DSP, TDM or AC’97. An SPDIF output is available when the audio block is
configured as a transmitter. To bring this level of flexibility and reconfigurability, the SAI contains two independent
audio sub-blocks. Each block has it own clock generator and I/O line controller.
Audio sampling frequencies up to 192 kHz are supported.
One of the SAI supports up to 8 microphones thanks to an embedded PDM interface.
The SAI can work in master or slave configuration. The audio sub-blocks can be either receiver or transmitter and
can work synchronously or asynchronously (with respect to the other one). The SAI can be connected with other
SAIs to work synchronously.

3.42 SPDIFRX receiver interface (SPDIFRX)

The SPDIFRX peripheral is designed to receive an S/PDIF flow compliant with IEC-60958 and IEC-61937. These
standards support simple stereo streams up to high sample rate, and compressed multi-channel surround sound,
such as those defined by Dolby or DTS (up to 5.1).
The main SPDIFRX features are the following:
• Up to 4 inputs available
• Automatic symbol rate detection
• Maximum symbol rate: 12.288 MHz
• Stereo stream from 32 to 192 kHz supported
• Supports Audio IEC-60958 and IEC-61937, consumer applications
• Parity bit management
• Communication using DMA for audio samples
• Communication using DMA for control and user channel information
• Interrupt capabilities
The SPDIFRX receiver provides all the necessary features to detect the symbol rate, and decode the incoming
data stream. The user can select the wanted SPDIF input, and when a valid signal will be available, the SPDIFRX
will re-sample the incoming signal, decode the Manchester stream, recognize frames, sub-frames and blocks
elements. It delivers to the CPU decoded data, and associated status flags.
The SPDIFRX also offers a signal named spdif_frame_sync, which toggles at the S/PDIF sub-frame rate that will
be used to compute the exact sample rate for clock drift algorithms.

3.43 Single wire protocol master interface (SWPMI)

The single wire protocol master interface (SWPMI) is the master interface corresponding to the contactless
frontend (CLF) defined in the ETSI TS 102 613 technical specification. The main features are:
• full-duplex communication mode
• automatic SWP bus state management (active, suspend, resume)
• configurable bit rate up to 2 Mbit/s
• automatic SOF, EOF and CRC handling
SWPMI can be served by the DMA controller.

3.44 Management data input/output (MDIO) slaves

The devices embed an MDIO slave interface it includes the following features:
• 32 MDIO register addresses, each of which is managed using separate input and output data registers:
– 32 x 16-bit firmware read/write, MDIO read-only output data registers
– 32 x 16-bit firmware read-only, MDIO write-only input data registers
• Configurable slave (port) address
• Independently maskable interrupts/events:
– MDIO register write
– MDIO register read
– MDIO protocol error

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 STM32H7B0xB
SD/SDIO/MMC card host interfaces (SDMMC)

• Able to operate in and wake up from STOP mode

3.45 SD/SDIO/MMC card host interfaces (SDMMC)

Two SDMMC host interfaces are available. They support MultiMediaCard System Specification version 4.51 in
three different databus modes: 1 bit (default), 4 bits and 8 bits.
One of the SDMMC interface can be supplied through a separate VDDMMC supply. If required, it can thus operate
at a different voltage level than all other I/Os.
Both interfaces support the SD memory card specifications version 4.1. and the SDIO card specification version
4.0. in two different databus modes: 1 bit (default) and 4 bits.
Each SDMMC host interface supports only one SD/SDIO/MMC card at any one time and a stack of MMC Version
4.51 or previous.
The SDMMC host interface embeds a dedicated DMA controller allowing high-speed transfers between the
interface and the SRAM.

3.46 Controller area network (FDCAN1, FDCAN2)

The controller area network (CAN) subsystem consists of two CAN modules, a shared message RAM memory
and a clock calibration unit.
Both CAN modules (FDCAN1 and FDCAN2) are compliant with ISO 11898-1 (CAN protocol specification version
2.0 part A, B) and CAN FD protocol specification version 1.0.
FDCAN1 supports time triggered CAN (TTCAN) specified in ISO 11898-4, including event synchronized
time-triggered communication, global system time, and clock drift compensation. FDCAN1 contains additional
registers, specific to the time triggered feature. The CAN FD option can be used together with event-triggered and
time-triggered CAN communication.
A 10 Kbyte message RAM memory implements filters, receive FIFOs, receive buffers, transmit event FIFOs,
transmit buffers (and triggers for TTCAN). This message RAM is shared between the two FDCAN1 and FDCAN2
modules.
The common clock calibration unit is optional. It can be used to generate a calibrated clock for both FDCAN1 and
FDCAN2 from the HSI internal RC oscillator and the PLL, by evaluating CAN messages received by the FDCAN1.

3.47 Universal serial bus on-the-go high-speed (OTG_HS)

The devices embed an USB OTG high-speed (up to 480 Mbit/s) device/host/OTG peripheral that supports both
full-speed and high-speed operations. It integrates the transceivers for full-speed operation (12 Mbit/s) and a
UTMI low-pin interface (ULPI) for high-speed operation (480 Mbit/s). When using the USB OTG_HS interface in
HS mode, an external PHY device connected to the ULPI is required.
The USB OTG_HS peripheral is compliant with the USB 2.0 specification and with the OTG 2.0 specification.
It features software-configurable endpoint setting and supports suspend/resume. The USB OTG_HS controller
requires a dedicated 48 MHz clock that is generated by a PLL connected to the HSE oscillator.
The main features are:
• Combined Rx and Tx FIFO size of 4 Kbytes with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 8 bidirectional endpoints
• 16 host channels with periodic OUT support
• Software configurable to OTG1.3 and OTG2.0 modes of operation
• USB 2.0 LPM (Link Power Management) support
• Battery Charging Specification Revision 1.2 support
• Internal FS OTG PHY support
• External HS or HS OTG operation supporting ULPI in SDR mode
The OTG PHY is connected to the microcontroller ULPI port through 12 signals. It can be clocked using the
60 MHz output.
• Internal USB DMA
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are connected

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 STM32H7B0xB
High-definition multimedia interface (HDMI) - consumer electronics control (CEC)

3.48 High-definition multimedia interface (HDMI) - consumer electronics control

(CEC)
The device embeds a HDMI-CEC controller that provides hardware support for the consumer electronics control
(CEC) protocol (supplement 1 to the HDMI standard).
This protocol provides high-level control functions between all audiovisual products in an environment. It is
specified to operate at low speeds with minimum processing and memory overhead. It has a clock domain
independent from the CPU clock, allowing the HDMI-CEC controller to wake up the MCU from Stop mode on data
reception.

3.49 Debug infrastructure

The devices offer a comprehensive set of debug and trace features to support software development and system
integration.
• Breakpoint debugging
• Code execution tracing
• Software instrumentation
• JTAG debug port
• Serial-wire debug port
• Trigger input and output
• Serial-wire trace port
• Trace port
• Arm® CoreSight™ debug and trace components
The debug can be controlled via a JTAG/Serial-wire debug access port, using industry standard debugging tools.
The trace port performs data capture for logging and analysis.

DS13196 - Rev 7 page 33/205

 STM32H7B0xB
Memory mapping

4 Memory mapping

Refer to the product line reference manual (RM0455) for details on the memory mapping as well as the boundary
addresses for all peripherals.

DS13196 - Rev 7 page 34/205

 STM32H7B0xB
Pin descriptions

5 Pin descriptions

Figure 4. LQFP64 (STM32H7B0xB without SMPS) pinout

BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD2
PB9
PB8

PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VBAT 1 48 VDD
PC13 2 47 VSS
PC14-OSC32_IN 3 46 VCAP
PC15-OSC32_OUT 4 45 PA13
PH0-OSC_IN 5 44 PA12
PH1-OSC_OUT 6 43 PA11
NRST 7 42 PA10
PC0 8 41 PA9
LQFP64
PC1 9 40 PA8
PC2 10 39 PC9
PC3 11 38 PC7
VSSA 12 37 PC6
VDDA 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 PB12
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VSS
VDD

PC4
PC5
PB0
PB1
PB2
PB10
VCAP
VSS
VDD
PA3

PA4
PA5
PA6
PA7

1. The above figure shows the package top view.

DS13196 - Rev 7 page 35/205

 STM32H7B0xB
Pin descriptions

Figure 5. LQFP100 (STM32H7B0xB without SMPS) pinout

BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76

PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 VCAP
PE5 4 72 PA13
PE6 5 71 PA12
VBAT 6 70 PA11
PC13 7 69 PA10
PC14-OSC32_ON 8 68 PA9
PC15-OSC32_OUT 9 67 PA8
VSS 10 66 PC9
VDD 11 65 PC8
PH0-OSC_IN 12 64 PC7
PH1-OSC_OUT
LQFP100
13 63 PC6
NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2_C 17 59 PD12
PC3_C 18 58 PD11
VSSA 19 57 PD10
VREF+ 20 56 PD9
VDDA 21 55 PD8
PA0 22 54 PB15
PA1 23 53 PB14
PA2 24 52 PB13
PA3 25 51 PB12
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
VSS
VDD

PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10

PE12
PE13
PE14
PE15
PB10

VCAP
VSS
VDD
PA4
PA5
PA6
PA7

PE11

PB11

1. The above figure shows the package top view.

DS13196 - Rev 7 page 36/205

 STM32H7B0xB
Pin descriptions

Figure 6. LQFP144 (STM32H7B0xB without SMPS) pinout

VDDMMC
PDR_ON

BOOT0

PG15

PG14
PG13
PG12

PG10

PC12

PC10
PG11

PC11

PA15
PA14
VDD

VDD
VSS

PG9

VSS
PD7
PD6

PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
PE2 1 108 VDD
PE3 2 107 VSS
PE4 3 106 VCAP
PE5 4 105 PA13
PE6 5 104 PA12
VBAT 6 103 PA11
PC13 7 102 PA10
PC14-OSC32_IN 8 101 PA9
PC15-OSC32_OUT 9 100 PA8
PF0 10 99 PC9
PF1 11 98 PC8
PF2 12 97 PC7
PF3 13 96 PC6
PF4 14 95 VDD33USB
PF5 15 94 VSS
VSS 16 93 PG8
VDD 17 92 PG7
PF6 18 91 PG6
PF7 19
LQPF144 90 PG5
PF8 20 89 PG4
PF9 21 88 PG3
PF10 22 87 PG2
PH0-OSC_IN 23 86 PD15
PH1-OSC_OUT 24 85 PD14
NRST 25 84 VDD
PC0 26 83 VSS
PC1 27 82 PD13
PC2_C 28 81 PD12
PC3_C 29 80 PD11
VDD 30 79 PD10
VSSA 31 78 PD9
VREF+ 32 77 PD8
VDDA 33 76 PB15
PA0 34 75 PB14
PA1 35 74 PB13
PA2 36 73 PB12
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
VSS
VDD

PC4
PC5
PB0
PB1
PB2

PF12
VSS
VDD
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
VSS
VDD
PE10

PE12
PE13
PE14
PE15
PB10

VCAP
VDD
PA3

PA4
PA5
PA6
PA7

PF11

PE11

PB11

1. The above figure shows the package top view.

DS13196 - Rev 7 page 37/205

 STM32H7B0xB
Pin descriptions

Figure 7. LQFP176 (STM32H7B0xB without SMPS) pinout

VDDMMC
PDR_ON

BOOT0

PG15

PG14
PG13
PG12

PG10

PC12

PC10
PG11

PC11

PA15
PA14
VDD

VDD

VDD
VSS

PG9

VSS

VSS
PD7
PD6

PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
PI7
PI6
PI5
PI4

PI3
PI2
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
156
155
154
153
152
151
150
149
148
147
146
145
144
143
142
141
140
139
138
137
136
135
134
133
PE2 1 132 PI1
PE3 2 131 PI0
PE4 3 130 PH15
PE5 4
129 PH14
PE6 5
128 PH13
VBAT 6
127 VDD
PI8 7
126 VSS
PC13 8
125 VCAP
PC14-OSC32_IN 9 124 PA13
PC15-OSC32_OUT 10 123 PA12
PI9 11 122 PA11
PI10 12 121 PA10
PI11 13 120 PA9
VSS 14 119 PA8
VDD 15 118 PC9
PF0 16 117 PC8
PF1 17 116 PC7
PF2 18 115 PC6
PF3 19 114 VDD33USB
PF4 20 113 VSS
PF5 21 112 PG8
VSS 22 111 PG7
VDD 23 LQFP176
110 PG6
PF6 24 109 PG5
PF7 25 108 PG4
PF8 26 107 PG3
PF9 27 106 PG2
PF10 28 105 PD15
PH0-OSC_IN 29 104 PD14
PH1-OSC_OUT 30 103 VDD
NRST 31 102 VSS
PC0 32 101 PD13
PC1 33 100 PD12
PC2_C 34 99 PD11
PC3_C 35 98 PD10
VDD 36 97 PD9
VSSA 37 96 PD8
VREF+ 38 95 PB15
VDDA 39 94 PB14
PA0 40 93 PB13
PA1 41 92 PB12
PA2 42 91 VDD
PH2 43 90 VSS
PH3 44 89 PH12
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
PH4
PH5

VSS
VDD

PC4
PC5
PB0
PB1
PB2

PF12
VSS
VDD
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
VSS
VDD
PE10

PE12
PE13
PE14
PE15
PB10

VCAP
VDD
PH6
PH7
PH8
PH9
PH10
PA3

PA4
PA5
PA6
PA7

PF11

PE11

PB11

PH11

1. The above figure shows the package top view.

DS13196 - Rev 7 page 38/205

 STM32H7B0xB
Pin descriptions

Figure 8. UFBGA169 (STM32H7B0xB with SMPS) ballout

1 2 3 4 5 6 7 8 9 10 11 12 13

A PE4 PE2 VDD VCAP PB6 VDDMMC VDD PG10 PD5 VDD PC12 PC10 PH14

PC15-
B OSC32_ PE3 VSS VDDLDO PB8 PB4 VSS PG11 PD6 VSS PC11 PA14 PH13
OUT
PC14-
C OSC32_IN PE6 PE5 PDR_ON PB9 PB5 PG14 PG9 PD4 PD1 PA15 VSS VDD

D VDD VSS PC13 PE1 PE0 PB7 PG13 PD7 PD3 PD0 PA13 VDDLDO VCAP

E VLXSMPS VSSSMPS VBAT PF1 PF3 BOOT0 PG15 PG12 PD2 PA10 PA9 PA8 PA12

F VDDSMPS VFBSMPS PF0 PF2 PF5 PF7 PB3 PG4 PC6 PC7 PC9 PC8 PA11

G VDD VSS PF4 PF6 PF9 NRST PF13 PE7 PG6 PG7 PG8 VDD50USB VDD33USB

PH0- PH1-
H OSC_IN OSC_OUT PF10 PF8 PC2 PA4 PF14 PE8 PG2 PG3 PG5 VSS VDD

J PC0 PC1 VSSA PC3 PA0 PA7 PF15 PE9 PE14 PD11 PD13 PD15 PD14

K PC3_C PC2_C PA0_C PA1 PA6 PC4 PG0 PE13 PH10 PH12 PD9 PD10 PD12

L VDDA VREF+ PA1_C PA5 PB1 PB2 PG1 PE12 PB10 PH11 PB13 VSS VDD

M VDD VSS PH3 VSS PB0 PF11 VSS PE10 PB11 VDDLDO VSS PD8 PB15

N PA2 PH2 PA3 VDD PC5 PF12 VDD PE11 PE15 VCAP VDD PB12 PB14

1. The above figure shows the package top view.

DS13196 - Rev 7 page 39/205

 STM32H7B0xB
Pin descriptions

Figure 9. UFBGA176+25 (STM32H7B0xB with SMPS) ballout

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

A VSS PB8 VDDLDO VCAP PB6 PB3 PG11 PG9 PD3 PD1 PA15 PA14 VDDLDO VCAP VSS

B PE4 PE3 PB9 PE0 PB7 PB4 PG13 PD7 PD5 PD2 PC12 PH14 PA13 PA8 PA12

C PC13 VSS PE2 PE1 BOOT0 PB5 PG14 PG10 PD4 PD0 PC11 PC10 PH13 PA10 PA11

PC15- VDD
D PC14- PE5 PDR_ON VSS PG15 PG12 PD6 VSS VDD PH15 PA9 PC8 PC7
OSC32_ MMC
OSC32_IN
OUT

VDD50
E VSS VBAT PE6 VDD VDD PC9 PC6
USB

F VLX VSS VDD33

PF1 PF0 VSS VSS VSS VSS VSS VSS PG6 PG5
SMPS SMPS USB

VDD VFB
G PF2 VDD VSS VSS VSS VSS VSS PG8 PG7 PG4 PG2
SMPS SMPS

H PF6 PF4 PF5 PF3 VSS VSS VSS VSS VSS VDD PG3 PD14 PD13

PH0-
J OSC_IN
PF8 PF7 PF9 VSS VSS VSS VSS VSS PD15 PD11 VSS PD12

PH1-
K OSC_ VSS PF10 VDD VSS VSS VSS VSS VSS VSS PD9 PB15 PB14
OUT

L NRST PC0 PC1 VREF− VDD PD10 PD8 PB13

M PC2 PC3 VREF+ VDDA VDD VSS PC5 PB1 VDD VSS PH7 PE14 PH11 PH9 PB12

N PC2_C PC3_C VSSA PH2 PA3 PA7 PF11 PE8 PG1 PF15 PF13 PB10 PH8 PH10 PH12

P PA0 PA1 PA1_C PH4 PA4 PA5 PB2 PG0 PE7 PB11 PF12 PE12 PE13 PE15 PH6

R VSS PA2 PA0_C PH3 PH5 PC4 PA6 PB0 PE10 PF14 PE9 PE11 VCAP VDDLDO VSS

1. The above figure shows the package top view.

2. The devices with SMPS correspond to commercial code STM32H7B0IIK6Q.

Table 6. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin
Pin name
function during and after reset is the same as the actual pin name
S Supply pin
I Input only pin
Pin type
I/O Input / output pin
ANA Analog-only Input
FT 5 V tolerant I/O
TT 3.3 V tolerant I/O
B Dedicated BOOT0 pin
I/O structure Bidirectional reset pin with
RST
embedded weak pull-up resistor
Option for TT and FT I/Os
_f I2C FM+ option

DS13196 - Rev 7 page 40/205

 STM32H7B0xB
Pin descriptions

Name Abbreviation Definition

_a analog option (supplied by VDDA)

USB option (supplied by

_u
VDD33USB)

High-speed low voltage (mainly

_h0 (1) SDMMC2 on VDDMMC power rail)

I/O structure High-speed low voltage (mainly

_h1(1)
for OCTOSPI)
High-speed low voltage (mainly
_h2(1)
for FMC)

_h3(1) High-speed low voltage

Secondary supply (supplied by

_s
VDDMMC) (2)

Unless otherwise specified by a note, all I/Os are set as floating inputs
Notes
during and after reset.
Alternate functions Functions selected through GPIOx_AFR registers
Pin functions
Additional functions Functions directly selected/enabled through peripheral registers

1. Refer to SYSCFG_CCCSR register in the device reference manual for how to set a group of I/Os in High-speed low-voltage mode.
Depending on the chosen I/Os (for example OCTOSPI), it can belong to several groups of I/Os and several HSLVx bits need to be set (refer
to Table Pin/ball definition). Take care that the VDDIO_HSLV and/or VDDMMC_HSLV option bits must also be set.
2. Refer to the table Features and peripheral counts for the list of packages featuring a VDDMMC separate supply pad.

Table 7. STM32H7B0xB pin/ball definition

Pin/ball name(1) (2)
UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TRACECLK, SAI1_CK1, SPI4_SCK,

A2 C3 - 1 1 1 PE2 I/O FT_h2 SAI1_MCLK_A, OCTOSPIM_P1_IO2, -
USART10_RX, FMC_A23, EVENTOUT

TRACED0, TIM15_BKIN, SAI1_SD_B,

B2 B2 - 2 2 2 PE3 I/O FT_h2 -
USART10_TX, FMC_A19, EVENTOUT

TRACED1, SAI1_D2, DFSDM1_DATIN3,

TIM15_CH1N, SPI4_SS, SAI1_FS_A,
A1 B1 - 3 3 3 PE4 I/O FT_h2 -
FMC_A20, DCMI_D4/PSSI_D4,
LCD_B0, EVENTOUT

TRACED2, SAI1_CK2,
DFSDM1_CKIN3, TIM15_CH1,
C3 D3 - 4 4 4 PE5 I/O FT_h2 SPI4_MISO, SAI1_SCK_A, FMC_A21, -
DCMI_D6/PSSI_D6, LCD_G0,
EVENTOUT

TRACED3, TIM1_BKIN2, SAI1_D1,

TIM15_CH2, SPI4_MOSI, SAI1_SD_A,
C2 E3 - 5 5 5 PE6 I/O FT_h2 SAI2_MCK_B, TIM1_BKIN2_COMP12, -
FMC_A22, DCMI_D7/PSSI_D7,
LCD_G1, EVENTOUT

B3 A1 - - - - VSS S - - -

A3 - - - - - VDD S - - -

E3 E2 1 6 6 6 VBAT S - - -

D2 A15 - - - - VSS S - - -

DS13196 - Rev 7 page 41/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TAMP_IN2/
- - - - - 7 PI8 I/O FT EVENTOUT TAMP_OUT3,
RTC_OUT2, WKUP4

TAMP_IN1/
TAMP_OUT2/
D3 C1 2 7 7 8 PC13 I/O FT EVENTOUT TAMP_OUT3,
RTC_OUT1/RTC_TS,
WKUP3

- C2 - - - - VSS S - - -

PC14-OSC32_IN
C1 D2 3 8 8 9 I/O FT EVENTOUT OSC32_IN
(OSC32_IN)

PC15-
B1 D1 4 9 9 10 OSC32_OUT I/O FT EVENTOUT OSC32_OUT
(OSC32_OUT)

OCTOSPIM_P2_IO0, UART4_RX,
- - - - - 11 PI9 I/O FT_h2 FDCAN1_RX, FMC_D30, LCD_VSYNC, -
EVENTOUT

OCTOSPIM_P2_IO1, FMC_D31,
- - - - - 12 PI10 I/O FT_h2 -
PSSI_D14, LCD_HSYNC, EVENTOUT

OCTOSPIM_P2_IO2, LCD_G6,
- - - - - 13 PI11 I/O FT OTG_HS_ULPI_DIR, PSSI_D15, WKUP5
EVENTOUT

- D10 - - - 14 VSS S - - -

D1 D11 - - - 15 VDD S - - -

E2 F2 - - - - VSSSMPS S - - -

E1 F1 - - - - VLXSMPS S - - -

F1 G1 - - - - VDDSMPS S - - -

F2 G2 - - - - VFBSMPS S - - -

I2C2_SDA, OCTOSPIM_P2_IO0,
F3 F4 - - 10 16 PF0 I/O FT_f -
FMC_A0, EVENTOUT

I2C2_SCL, OCTOSPIM_P2_IO1,
E4 F3 - - 11 17 PF1 I/O FT_f -
FMC_A1, EVENTOUT

I2C2_SMBA, OCTOSPIM_P2_IO2,
F4 G3 - - 12 18 PF2 I/O FT_h2 -
FMC_A2, EVENTOUT

OCTOSPIM_P2_IO3, FMC_A3,
E5 H4 - - 13 19 PF3 I/O FT_h2 -
EVENTOUT

OCTOSPIM_P2_CLK, FMC_A4,
G3 H2 - - 14 20 PF4 I/O FT_h2 -
EVENTOUT

OCTOSPIM_P2_NCLK, FMC_A5,
F5 H3 - - 15 21 PF5 I/O FT_h2 -
EVENTOUT

B7 E1 - 10 16 22 VSS S - - -

A7 E4 - 11 17 23 VDD S - - -

TIM16_CH1, SPI5_SS, SAI1_SD_B,

G4 H1 - - 18 24 PF6 I/O FT_h1 UART7_Rx, OCTOSPIM_P1_IO3, -
EVENTOUT

TIM17_CH1, SPI5_SCK,
F6 J3 - - 19 25 PF7 I/O FT_h1 SAI1_MCLK_B, UART7_Tx, -
OCTOSPIM_P1_IO2, EVENTOUT

TIM16_CH1N, SPI5_MISO,
SAI1_SCK_B, UART7_RTS,
H4 J2 - - 20 26 PF8 I/O FT_h1 -
TIM13_CH1, OCTOSPIM_P1_IO0,
EVENTOUT

DS13196 - Rev 7 page 42/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM17_CH1N, SPI5_MOSI,
G5 J4 - - 21 27 PF9 I/O FT_h1 SAI1_FS_B, UART7_CTS, TIM14_CH1, -
OCTOSPIM_P1_IO1, EVENTOUT

TIM16_BKIN, SAI1_D3, PSSI_D15,

H3 K3 - - 22 28 PF10 I/O FT_h1 OCTOSPIM_P1_CLK, DCMI_D11/ -
PSSI_D11, LCD_DE, EVENTOUT

PH0-
H1 J1 5 12 23 29 I/O FT EVENTOUT OSC_IN
OSC_IN(PH0)

PH1-OSC_OUT
H2 K1 6 13 24 30 I/O FT EVENTOUT OSC_OUT
(PH1)

G6 L1 7 14 25 31 NRST I/O RST - -

DFSDM1_CKIN0, DFSDM1_DATIN4,
SAI2_FS_B, FMC_A25,
J1 L2 8 15 26 32 PC0 I/O FT_a ADC12_INP10
OTG_HS_ULPI_STP, LCD_G2,
FMC_SDNWE, LCD_R5, EVENTOUT

TRACED0, SAI1_D1,
DFSDM1_DATIN0, DFSDM1_CKIN4, ADC12_INP11,
J2 L3 9 16 27 33 PC1 I/O FT_ah0 SPI2_MOSI/I2S2_SDO, SAI1_SD_A, ADC12_INN10,
SDMMC2_CK, OCTOSPIM_P1_IO4, TAMP_IN3, WKUP6
MDIOS_MDC, LCD_G5, EVENTOUT

PWR_CSTOP, DFSDM1_CKIN1,
SPI2_MISO/I2S2_SDI,
H5 DFSDM1_CKOUT, OCTOSPIM_P1_IO2, ADC12_INP12,
(3) M1 (3) 10 - - - PC2 I/O FT_a
OTG_HS_ULPI_DIR, ADC12_INN11
OCTOSPIM_P1_IO5, FMC_SDNE0,
EVENTOUT

K2 N1 ADC2_INP0,
(3) (3) - 17(4) 28(4) 34(4) PC2_C ANA TT_a -
ADC2_INN1

PWR_CSLEEP, DFSDM1_DATIN1,
SPI2_MOSI/I2S2_SDO,
OCTOSPIM_P1_IO0, ADC12_INP13,
J4(3) M2(3) 11 - - - PC3 I/O FT_a
OTG_HS_ULPI_NXT, ADC12_INN12
OCTOSPIM_P1_IO6, FMC_SDCKE0,
EVENTOUT

K1(3) N2(3) - 18(4) 29(4) 35(4) PC3_C ANA TT_a - ADC2_INP1

G1 E12 - - 30 36 VDD S - -

G2 F6 - - - - VSS S - -

J3 N3 12 19 31 37 VSSA S - -

- L4 - - - - VREF- S - -

L2 M3 - 20 32 38 VREF+ S - -

L1 M4 13 21 33 39 VDDA S - -

TIM2_CH1/TIM2_ETR, TIM5_CH1,
TIM8_ETR, TIM15_BKIN,
SPI6_SS/I2S6_WS, USART2_CTS/ ADC1_INP16,
J5(3) P1(3) 14 22 34 40 PA0 I/O FT_a
USART2_NSS, UART4_TX, WKUP1
SDMMC2_CMD, SAI2_SD_B,
EVENTOUT

ADC1_INP0,
K3(3) R3(3) - - - - PA0_C ANA TT_a -
ADC1_INN1

TIM2_CH2, TIM5_CH2, LPTIM3_OUT,

TIM15_CH1N, USART2_RTS,
ADC1_INP17,
K4(3) P2(3) 15 23 35 41 PA1 I/O FT_ah1 UART4_RX, OCTOSPIM_P1_IO3,
ADC1_INN16
SAI2_MCK_B, OCTOSPIM_P1_DQS,
LCD_R2, EVENTOUT

L3(3) P3(3) - - - - PA1_C ANA TT_a - ADC1_INP1

DS13196 - Rev 7 page 43/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM2_CH3, TIM5_CH3, TIM15_CH1,

DFSDM2_CKIN1, USART2_TX, ADC1_INP14,
N1 R2 16 24 36 42 PA2 I/O FT_a
SAI2_SCK_B, MDIOS_MDIO, LCD_R1, WKUP2
EVENTOUT

LPTIM1_IN2, OCTOSPIM_P1_IO4,
N2 N4 - - - 43 PH2 I/O FT_h2 SAI2_SCK_B, FMC_SDCKE0, LCD_R0, -
EVENTOUT

M1 G4 - - - - VDD S - - -

M2 F7 - - - - VSS S - - -

OCTOSPIM_P1_IO5, SAI2_MCK_B,
M3 R4 - - - 44 PH3 I/O FT_ah2 -
FMC_SDNE0, LCD_R1, EVENTOUT

I2C2_SCL, LCD_G5,
- P4 - - - 45 PH4 I/O FT_fa OTG_HS_ULPI_NXT, PSSI_D14, -
LCD_G4, EVENTOUT

I2C2_SDA, SPI5_SS, FMC_SDNWE,

- R5 - - - 46 PH5 I/O FT_fa -
EVENTOUT

TIM2_CH4, TIM5_CH4,
OCTOSPIM_P1_CLK, TIM15_CH2,
N3 N5 17 25 37 47 PA3 I/O FT_ah1 I2S6_MCK, USART2_RX, LCD_B2, ADC1_INP15
OTG_HS_ULPI_D0, LCD_B5,
EVENTOUT

M4 F8 18 26 38 48 VSS S - - -

N4 H12 19 27 39 49 VDD S - - -

TIM5_ETR, SPI1_SS/I2S1_WS,
SPI3_SS/I2S3_WS, USART2_CK, ADC1_INP18,
H6 P5 20 28 40 50 PA4 I/O TT_a
SPI6_SS/I2S6_WS, DCMI_HSYNC/ DAC1_OUT1
PSSI_DE, LCD_VSYNC, EVENTOUT

PWR_NDSTOP2, TIM2_CH1/
TIM2_ETR, TIM8_CH1N, SPI1_SCK/ ADC1_INP19,
L4 P6 21 29 41 51 PA5 I/O TT_ah0 I2S1_CK, SPI6_SCK/I2S6_CK, ADC1_INN18,
OTG_HS_ULPI_CK, PSSI_D14, DAC1_OUT2
LCD_R4, EVENTOUT

TIM1_BKIN, TIM3_CH1,
TIM8_BKIN, SPI1_MISO/I2S1_SDI,
OCTOSPIM_P1_IO3, SPI6_MISO/
ADC12_INP3,
K5 R7 22 30 42 52 PA6 I/O TT_ah1 I2S6_SDI, TIM13_CH1,
DAC2_OUT1
TIM8_BKIN_COMP12, MDIOS_MDC,
TIM1_BKIN_COMP12, DCMI_PIXCLK/
PSSI_PDCK, LCD_G2, EVENTOUT

TIM1_CH1N, TIM3_CH2, TIM8_CH1N,

DFSDM2_DATIN1, SPI1_MOSI/
ADC12_INP7,
I2S1_SDO, SPI6_MOSI/I2S6_SDO,
J6 N6 23 31 43 53 PA7 I/O FT_ah1 ADC12_INN3,
TIM14_CH1, OCTOSPIM_P1_IO2,
OPAMP1_VINM
FMC_SDNWE, LCD_VSYNC,
EVENTOUT

DFSDM1_CKIN2, I2S1_MCK, ADC12_INP4,

K6 R6 24 32 44 54 PC4 I/O FT_a SPDIFRX1_IN2, FMC_SDNE0, OPAMP1_VOUT,
LCD_R7, EVENTOUT COMP1_INM

SAI1_D3, DFSDM1_DATIN2, PSSI_D15,

ADC12_INP8,
SPDIFRX1_IN3, OCTOSPIM_P1_DQS,
N5 M7 25 33 45 55 PC5 I/O FT_ah1 ADC12_INN4,
FMC_SDCKE0, COMP1_OUT, LCD_DE,
OPAMP1_VINM
EVENTOUT

N7 K4 - - - - VDD S - - -

M7 F9 - - - - VSS S - - -

DS13196 - Rev 7 page 44/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM1_CH2N, TIM3_CH3,
TIM8_CH2N, DFSDM2_CKOUT, ADC12_INP9,
DFSDM1_CKOUT, UART4_CTS, ADC12_INN5,
M5 R8 26 34 46 56 PB0 I/O FT_ah0
LCD_R3, OTG_HS_ULPI_D1, OPAMP1_VINP,
OCTOSPIM_P1_IO1, LCD_G1, COMP1_INP
EVENTOUT

TIM1_CH3N, TIM3_CH4,
TIM8_CH3N, DFSDM1_DATIN1,
ADC12_INP5,
L5 M8 27 35 47 57 PB1 I/O FT_ah0 LCD_R6, OTG_HS_ULPI_D2,
COMP1_INM
OCTOSPIM_P1_IO0, LCD_G0,
EVENTOUT

RTC_OUT2, SAI1_D1,
DFSDM1_CKIN1, SAI1_SD_A,
L6 P7 28 36 48 58 PB2 I/O FT_ah1 SPI3_MOSI/I2S3_SDO, COMP1_INP
OCTOSPIM_P1_CLK,
OCTOSPIM_P1_DQS, EVENTOUT

SPI5_MOSI, OCTOSPIM_P1_NCLK,
M6 N7 - - 49 59 PF11 I/O FT_ah1 SAI2_SD_B, FMC_SDNRAS, ADC1_INP2
DCMI_D12/PSSI_D12, EVENTOUT

OCTOSPIM_P2_DQS, FMC_A6, ADC1_INP6,

N6 P11 - - 50 60 PF12 I/O FT_ah2
EVENTOUT ADC1_INN2

- F10 - - 51 61 VSS S - - -

- L12 - - 52 62 VDD S - - -

DFSDM1_DATIN6, I2C4_SMBA,
G7 N11 - - 53 63 PF13 I/O FT_ah2 ADC2_INP2
FMC_A7, EVENTOUT

DFSDM1_CKIN6, I2C4_SCL, FMC_A8, ADC2_INP6,

H7 R10 - - 54 64 PF14 I/O FT_fah2
EVENTOUT ADC2_INN2

J7 N10 - - 55 65 PF15 I/O FT_fh2 I2C4_SDA, FMC_A9, EVENTOUT -

OCTOSPIM_P2_IO4, UART9_RX,
K7 P8 - - 56 66 PG0 I/O FT_h2 -
FMC_A10, EVENTOUT

- F12 - - - - VSS S - - -

- M5 - - - - VDD S - - -

OCTOSPIM_P2_IO5, UART9_TX,
L7 N9 - - 57 67 PG1 I/O FT_h2 OPAMP2_VINM
FMC_A11, EVENTOUT

TIM1_ETR, DFSDM1_DATIN2,
OPAMP2_VOUT,
G8 P9 - 37 58 68 PE7 I/O FT_ah2 UART7_Rx, OCTOSPIM_P1_IO4,
COMP2_INM
FMC_D4/FMC_DA4, EVENTOUT

TIM1_CH1N, DFSDM1_CKIN2,
UART7_Tx, OCTOSPIM_P1_IO5,
H8 N8 - 38 59 69 PE8 I/O FT_ah2 OPAMP2_VINM
FMC_D5/FMC_DA5, COMP2_OUT,
EVENTOUT

TIM1_CH1, DFSDM1_CKOUT,
OPAMP2_VINP,
J8 R11 - 39 60 70 PE9 I/O FT_ah2 UART7_RTS, OCTOSPIM_P1_IO6,
COMP2_INP
FMC_D6/FMC_DA6, EVENTOUT

M11 G6 - - 61 71 VSS S - - -

N11 M9 - - 62 72 VDD S - - -

TIM1_CH2N, DFSDM1_DATIN4,
M8 R9 - 40 63 73 PE10 I/O FT_ah2 UART7_CTS, OCTOSPIM_P1_IO7, COMP2_INM
FMC_D7/FMC_DA7, EVENTOUT

TIM1_CH2, DFSDM1_CKIN4, SPI4_SS,

SAI2_SD_B, OCTOSPIM_P1_NCS,
N8 R12 - 41 64 74 PE11 I/O FT_ah2 COMP2_INP
FMC_D8/FMC_DA8, LCD_G3,
EVENTOUT

DS13196 - Rev 7 page 45/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM1_CH3N, DFSDM1_DATIN5,
SPI4_SCK, SAI2_SCK_B, FMC_D9/
L8 P12 - 42 65 75 PE12 I/O FT_h2 -
FMC_DA9, COMP1_OUT, LCD_B4,
EVENTOUT

TIM1_CH3, DFSDM1_CKIN5,
SPI4_MISO, SAI2_FS_B, FMC_D10/
K8 P13 - 43 66 76 PE13 I/O FT_h2 -
FMC_DA10, COMP2_OUT, LCD_DE,
EVENTOUT

TIM1_CH4, SPI4_MOSI, SAI2_MCK_B,

J9 M12 - 44 67 77 PE14 I/O FT_h2 FMC_D11/FMC_DA11, LCD_CLK, -
EVENTOUT

TIM1_BKIN, USART10_CK, FMC_D12/

N9 P14 - 45 68 78 PE15 I/O FT_h2 FMC_DA12, TIM1_BKIN_COMP12, -
LCD_R7, EVENTOUT

TIM2_CH3, LPTIM2_IN1, I2C2_SCL,

SPI2_SCK/I2S2_CK, DFSDM1_DATIN7,
L9 N12 29 46 69 79 PB10 I/O FT_f USART3_TX, OCTOSPIM_P1_NCS, -
OTG_HS_ULPI_D3, LCD_G4,
EVENTOUT

TIM2_CH4, LPTIM2_ETR, I2C2_SDA,

DFSDM1_CKIN7, USART3_RX,
M9 P10 - 47 70 80 PB11 I/O FT_f -
OTG_HS_ULPI_D4, LCD_G5,
EVENTOUT

N10 R13 30 48 71 81 VCAP S - - -

- M10 31 49 - - VSS S - - -

M10 R14 - - - - VDDLDO S - - -

- - 32 50 72 82 VDD S - - -

TIM12_CH1, I2C2_SMBA, SPI5_SCK,

- P15 - - - 83 PH6 I/O FT FMC_SDNE1, DCMI_D8/PSSI_D8, -
EVENTOUT

I2C3_SCL, SPI5_MISO, FMC_SDCKE1,

- M11 - - - 84 PH7 I/O FT_f -
DCMI_D9/PSSI_D9, EVENTOUT

TIM5_ETR, I2C3_SDA, FMC_D16,

- N13 - - - 85 PH8 I/O FT_fh2 DCMI_HSYNC/PSSI_DE, LCD_R2, -
EVENTOUT

TIM12_CH2, I2C3_SMBA, FMC_D17,

- M14 - - - 86 PH9 I/O FT_h2 DCMI_D0/PSSI_D0, LCD_R3, -
EVENTOUT

TIM5_CH1, I2C4_SMBA, FMC_D18,

K9 N14 - - - 87 PH10 I/O FT_h2 DCMI_D1/PSSI_D1, LCD_R4, -
EVENTOUT

TIM5_CH2, I2C4_SCL, FMC_D19,

L10 M13 - - - 88 PH11 I/O FT_fh2 DCMI_D2/PSSI_D2, LCD_R5, -
EVENTOUT

TIM5_CH3, I2C4_SDA, FMC_D20,

K10 N15 - - - 89 PH12 I/O FT_fh2 DCMI_D3/PSSI_D3, LCD_R6, -
EVENTOUT

L12 G10 - - - 90 VSS S - - -

L13 - - - - 91 VDD S - - -

TIM1_BKIN, OCTOSPIM_P1_NCLK,
I2C2_SMBA, SPI2_SS/
I2S2_WS, DFSDM1_DATIN1,
N12 M15 33 51 73 92 PB12 I/O FT_h1 USART3_CK, FDCAN2_RX, -
OTG_HS_ULPI_D5, DFSDM2_DATIN1,
TIM1_BKIN_COMP12, UART5_RX,
EVENTOUT

DS13196 - Rev 7 page 46/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM1_CH1N, LPTIM2_OUT,
DFSDM2_CKIN1, SPI2_SCK/I2S2_CK,
DFSDM1_CKIN1, USART3_CTS/
L11 L15 34 52 74 93 PB13 I/O FT_h0 USART3_NSS, FDCAN2_TX, -
OTG_HS_ULPI_D6, SDMMC1_D0,
DCMI_D2/PSSI_D2, UART5_TX,
EVENTOUT

TIM1_CH2N, TIM12_CH1, TIM8_CH2N,

USART1_TX, SPI2_MISO/I2S2_SDI,
N13 K15 35 53 75 94 PB14 I/O FT_h0 DFSDM1_DATIN2, USART3_RTS, -
UART4_RTS, SDMMC2_D0, LCD_CLK,
EVENTOUT

RTC_REFIN, TIM1_CH3N, TIM12_CH2,

TIM8_CH3N, USART1_RX, SPI2_MOSI/
M13 K14 36 54 76 95 PB15 I/O FT_h0 I2S2_SDO, DFSDM1_CKIN2, -
UART4_CTS, SDMMC2_D1, LCD_G7,
EVENTOUT

DFSDM1_CKIN3, USART3_TX,
M12 L14 - 55 77 96 PD8 I/O FT_h2 SPDIFRX1_IN1, FMC_D13/FMC_DA13, -
EVENTOUT

DFSDM1_DATIN3, USART3_RX,
K11 K13 - 56 78 97 PD9 I/O FT_h2 -
FMC_D14/FMC_DA14, EVENTOUT

DFSDM1_CKOUT, DFSDM2_CKOUT,
K12 L13 - 57 79 98 PD10 I/O FT_h2 USART3_CK, FMC_D15/FMC_DA15, -
LCD_B3, EVENTOUT

- H6 - - - - VSS S - - -

LPTIM2_IN2, I2C4_SMBA,
USART3_CTS/USART3_NSS,
J10 J13 - 58 80 99 PD11 I/O FT_h2 -
OCTOSPIM_P1_IO0, SAI2_SD_A,
FMC_A16/FMC_CLE, EVENTOUT

LPTIM1_IN1, TIM4_CH1, LPTIM2_IN1,

I2C4_SCL, USART3_RTS,
K13 J15 - 59 81 100 PD12 I/O FT_fh2 OCTOSPIM_P1_IO1, SAI2_FS_A, -
FMC_A17/FMC_ALE, DCMI_D12/
PSSI_D12, EVENTOUT

LPTIM1_OUT, TIM4_CH2, I2C4_SDA,

OCTOSPIM_P1_IO3, SAI2_SCK_A,
J11 H15 - 60 82 101 PD13 I/O FT_fh2 -
UART9_RTS, FMC_A18, DCMI_D13/
PSSI_D13, EVENTOUT

H12 R1 - - 83 102 VSS S - - -

H13 - - - 84 103 VDD S - - -

TIM4_CH3, UART8_CTS, UART9_RX,

J13 H14 - 61 85 104 PD14 I/O FT_h2 -
FMC_D0/FMC_DA0, EVENTOUT

TIM4_CH4, UART8_RTS, UART9_TX,

J12 J12 - 62 86 105 PD15 I/O FT_h2 -
FMC_D1/FMC_DA1, EVENTOUT

- D6 - - - - VSS S - - -

- G7 - - - - VSS S - - -

TIM8_BKIN, TIM8_BKIN_COMP12,
H9 G15 - - 87 106 PG2 I/O FT_h2 -
FMC_A12, EVENTOUT

TIM8_BKIN2, TIM8_BKIN2_COMP12,
H10 H13 - - 88 107 PG3 I/O FT_h2 -
FMC_A13, EVENTOUT

C12 H10 - - - - VSS S - - -

C13 - - - - - VDD S - - -

TIM1_BKIN2, TIM1_BKIN2_COMP12,
F8 G14 - - 89 108 PG4 I/O FT_h2 -
FMC_A14/FMC_BA0, EVENTOUT

DS13196 - Rev 7 page 47/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM1_ETR, FMC_A15/FMC_BA1,
H11 F15 - - 90 109 PG5 I/O FT_h2 -
EVENTOUT

TIM17_BKIN, OCTOSPIM_P1_NCS,
G9 F14 - - 91 110 PG6 I/O FT_h2 FMC_NE3, DCMI_D12/PSSI_D12, -
LCD_R7, EVENTOUT

SAI1_MCLK_A, USART6_CK,
OCTOSPIM_P2_DQS, FMC_INT,
G10 G13 - - 92 111 PG7 I/O FT_h2 -
DCMI_D13/PSSI_D13, LCD_CLK,
EVENTOUT

TIM8_ETR, SPI6_SS/I2S6_WS,
G11 G12 - - 93 112 PG8 I/O FT_h2 USART6_RTS, SPDIFRX1_IN2, -
FMC_SDCLK, LCD_G7, EVENTOUT

- J6 - - 94 113 VSS S - - -

G12 E15 - - - - VDD50USB S - - -

G13 F13 - - 95 114 VDD33USB S - - -

TIM3_CH1, TIM8_CH1,
DFSDM1_CKIN3, I2S2_MCK,
USART6_TX, SDMMC1_D0DIR,
F9 E14 37 63 96 115 PC6 I/O FT_h0 SWPMI_IO
FMC_NWAIT, SDMMC2_D6,
SDMMC1_D6, DCMI_D0/PSSI_D0,
LCD_HSYNC, EVENTOUT

TRGIO, TIM3_CH2, TIM8_CH2,

DFSDM1_DATIN3, I2S3_MCK,
USART6_RX, SDMMC1_D123DIR,
F10 D15 38 64 97 116 PC7 I/O FT_h0 -
FMC_NE1, SDMMC2_D7, SWPMI_TX,
SDMMC1_D7, DCMI_D1/PSSI_D1,
LCD_G6, EVENTOUT

TRACED1, TIM3_CH3, TIM8_CH3,

USART6_CK, UART5_RTS, FMC_NE2/
F12 D14 - 65 98 117 PC8 I/O FT_h0 FMC_NCE, FMC_INT, SWPMI_RX, -
SDMMC1_D0, DCMI_D2/PSSI_D2,
EVENTOUT

MCO2, TIM3_CH4, TIM8_CH4,

I2C3_SDA, I2S_CKIN, UART5_CTS,
OCTOSPIM_P1_IO0, LCD_G3,
F11 E13 39 66 99 118 PC9 I/O FT_fh0 -
SWPMI_SUSPEND, SDMMC1_D1,
DCMI_D3/PSSI_D3, LCD_B2,
EVENTOUT

- J7 - - - - VSS S - - -

MCO1, TIM1_CH1, TIM8_BKIN2,

I2C3_SCL, USART1_CK,
E12 B14 40 67 100 119 PA8 I/O FT_fh0 OTG_HS_SOF, UART7_RX, -
TIM8_BKIN2_COMP12, LCD_B3,
LCD_R6, EVENTOUT

TIM1_CH2, LPUART1_TX, I2C3_SMBA,

SPI2_SCK/I2S2_CK, USART1_TX,
E11 D13 41 68 101 120 PA9 I/O FT_u OTG_HS_VBUS
DCMI_D0/PSSI_D0, LCD_R5,
EVENTOUT

TIM1_CH3, LPUART1_RX,
USART1_RX, OTG_HS_ID,
E10 C14 42 69 102 121 PA10 I/O FT_u -
MDIOS_MDIO, LCD_B4, DCMI_D1/
PSSI_D1, LCD_B1, EVENTOUT

TIM1_CH4, LPUART1_CTS, SPI2_SS/

I2S2_WS, UART4_RX, USART1_CTS/
F13 C15 43 70 103 122 PA11 I/O FT_u OTG_HS_DM
USART1_NSS, FDCAN1_RX, LCD_R4,
EVENTOUT

DS13196 - Rev 7 page 48/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TIM1_ETR, LPUART1_RTS, SPI2_SCK/

I2S2_CK, UART4_TX, USART1_RTS,
E13 B15 44 71 104 123 PA12 I/O FT_u OTG_HS_DP
SAI2_FS_B, FDCAN1_TX, LCD_R5,
EVENTOUT

PA13(JTMS/
D11 B13 45 72 105 124 I/O FT JTMS/SWDIO, EVENTOUT -
SWDIO)

D13 A14 46 73 106 125 VCAP S - - -

B10 M6 47 74 107 126 VSS S - - -

D12 A13 - - - - VDDLDO S - - -

A10 - 48 75 108 127 VDD S - - -

TIM8_CH1N, UART4_TX, FDCAN1_TX,

B13 C13 - - - 128 PH13 I/O FT_h2 -
FMC_D21, LCD_G2, EVENTOUT

TIM8_CH2N, UART4_RX, FDCAN1_RX,

A13 B12 - - - 129 PH14 I/O FT_h2 FMC_D22, DCMI_D4/PSSI_D4, -
LCD_G3, EVENTOUT

TIM8_CH3N, FMC_D23, DCMI_D11/

- D12 - - - 130 PH15 I/O FT_h2 -
PSSI_D11, LCD_G4, EVENTOUT

TIM5_CH4, SPI2_SS/I2S2_WS,
- - - - - 131 PI0 I/O FT_h2 FMC_D24, DCMI_D13/PSSI_D13, -
LCD_G5, EVENTOUT

- J9 - - - - VSS S - - -

TIM8_BKIN2, SPI2_SCK/I2S2_CK,
TIM8_BKIN2_COMP12, FMC_D25,
- - - - - 132 PI1 I/O FT_h2 -
DCMI_D8/PSSI_D8, LCD_G6,
EVENTOUT

TIM8_CH4, SPI2_MISO/I2S2_SDI,
- - - - - 133 PI2 I/O FT_h2 FMC_D26, DCMI_D9/PSSI_D9, -
LCD_G7, EVENTOUT

TIM8_ETR, SPI2_MOSI/I2S2_SDO,
- - - - - 134 PI3 I/O FT_h2 FMC_D27, DCMI_D10/PSSI_D10, -
EVENTOUT

- J10 - - - 135 VSS S - - -

- - - - - 136 VDD S - - -

PA14(JTCK/
B12 A12 49 76 109 137 I/O FT JTCK/SWCLK, EVENTOUT -
SWCLK)

JTDI, TIM2_CH1/TIM2_ETR,
HDMI_CEC, SPI1_SS/I2S1_WS,
C11 A11 50 77 110 138 PA15(JTDI) I/O FT SPI3_SS/I2S3_WS, SPI6_SS/I2S6_WS, -
UART4_RTS, LCD_R3, UART7_TX,
LCD_B6, EVENTOUT

DFSDM1_CKIN5, DFSDM2_CKIN0,
SPI3_SCK/I2S3_CK, USART3_TX,
UART4_TX, OCTOSPIM_P1_IO1,
A12 C12 51 78 111 139 PC10 I/O FT_h0 -
LCD_B1, SWPMI_RX, SDMMC1_D2,
DCMI_D8/PSSI_D8, LCD_R2,
EVENTOUT

DFSDM1_DATIN5, DFSDM2_DATIN0,
SPI3_MISO/I2S3_SDI, USART3_RX,
B11 C11 52 79 112 140 PC11 I/O FT_h0 UART4_RX, OCTOSPIM_P1_NCS, -
SDMMC1_D3, DCMI_D4/PSSI_D4,
LCD_B4, EVENTOUT

TRACED3, TIM15_CH1,
DFSDM2_CKOUT, SPI6_SCK/I2S6_CK,
A11 B11 53 80 113 141 PC12 I/O FT_h0 SPI3_MOSI/I2S3_SDO, USART3_CK, -
UART5_TX, SDMMC1_CK, DCMI_D9/
PSSI_D9, LCD_R6, EVENTOUT

DS13196 - Rev 7 page 49/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

- J14 - - - - VSS S - - -

DFSDM1_CKIN6, UART4_RX,
D10 C10 - 81 114 142 PD0 I/O FT_h2 FDCAN1_RX, UART9_CTS, FMC_D2/ -
FMC_DA2, LCD_B1, EVENTOUT

DFSDM1_DATIN6, UART4_TX,
C10 A10 - 82 115 143 PD1 I/O FT_h2 FDCAN1_TX, FMC_D3/FMC_DA3, -
EVENTOUT

TRACED2, TIM3_ETR, TIM15_BKIN,

UART5_RX, LCD_B7, SDMMC1_CMD,
E9 B10 54 83 116 144 PD2 I/O FT_h0 -
DCMI_D11/PSSI_D11, LCD_B2,
EVENTOUT

DFSDM1_CKOUT, SPI2_SCK/
I2S2_CK, USART2_CTS/USART2_NSS,
D9 A9 - 84 117 145 PD3 I/O FT_h2 -
FMC_CLK, DCMI_D5/PSSI_D5,
LCD_G7, EVENTOUT

USART2_RTS, OCTOSPIM_P1_IO4,
C9 C9 - 85 118 146 PD4 I/O FT_h1 -
FMC_NOE, EVENTOUT

USART2_TX, OCTOSPIM_P1_IO5,
A9 B9 - 86 119 147 PD5 I/O FT_h1 -
FMC_NWE, EVENTOUT

- K2 - - 120 148 VSS S - - -

- - - - 121 149 VDDMMC S - - -

SAI1_D1, DFSDM1_CKIN4,
DFSDM1_DATIN1, SPI3_MOSI/
I2S3_SDO, SAI1_SD_A, USART2_RX,
B9 D9 - 87 122 150 PD6 I/O FT_sh3 -
OCTOSPIM_P1_IO6, SDMMC2_CK,
FMC_NWAIT, DCMI_D10/PSSI_D10,
LCD_B2, EVENTOUT

DFSDM1_DATIN4, SPI1_MOSI/
I2S1_SDO, DFSDM1_CKIN1,
D8 B8 - 88 123 151 PD7 I/O FT_sh3 USART2_CK, SPDIFRX1_IN0, -
OCTOSPIM_P1_IO7, SDMMC2_CMD,
FMC_NE1, EVENTOUT

- K6 - - - - VSS S - - -

A6 D5 - - - - VDDMMC S - - -

SPI1_MISO/I2S1_SDI, USART6_RX,
SPDIFRX1_IN3, OCTOSPIM_P1_IO6,
C8 A8 - - 124 152 PG9 I/O FT_sh3 SAI2_FS_B, SDMMC2_D0, FMC_NE2/ -
FMC_NCE, DCMI_VSYNC/PSSI_RDY,
EVENTOUT

OCTOSPIM_P2_IO6, SPI1_SS/
I2S1_WS, LCD_G3, SAI2_SD_B,
A8 C8 - - 125 153 PG10 I/O FT_sh3 -
SDMMC2_D1, FMC_NE3, DCMI_D2/
PSSI_D2, LCD_B2, EVENTOUT

LPTIM1_IN2, SPI1_SCK/I2S1_CK,
SPDIFRX1_IN0, OCTOSPIM_P2_IO7,
B8 A7 - - 126 154 PG11 I/O FT_sh3 SDMMC2_D2, USART10_RX, -
DCMI_D3/PSSI_D3, LCD_B3,
EVENTOUT

LPTIM1_IN1, OCTOSPIM_P2_NCS,
SPI6_MISO/I2S6_SDI, USART6_RTS,
E8 D8 - - 127 155 PG12 I/O FT_sh3 SPDIFRX1_IN1, LCD_B4, -
SDMMC2_D3, USART10_TX,
FMC_NE4, LCD_B1, EVENTOUT

TRACED0, LPTIM1_OUT,
SPI6_SCK/I2S6_CK, USART6_CTS/
D7 B7 - - 128 156 PG13 I/O FT_sh3 USART6_NSS, SDMMC2_D6, -
USART10_CTS/USART10_NSS,
FMC_A24, LCD_R0, EVENTOUT

DS13196 - Rev 7 page 50/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

TRACED1, LPTIM1_ETR,
SPI6_MOSI/I2S6_SDO, USART6_TX,
C7 C7 - - 129 157 PG14 I/O FT_sh3 OCTOSPIM_P1_IO7, SDMMC2_D7, -
USART10_RTS, FMC_A25, LCD_B0,
EVENTOUT

- K7 - - 130 158 VSS S - - -

- - - - 131 159 VDD S - - -

- K8 - - - - VSS S - - -

USART6_CTS/USART6_NSS,
OCTOSPIM_P2_DQS, USART10_CK,
E7 D7 - - 132 160 PG15 I/O FT_h1 -
FMC_SDNCAS, DCMI_D13/PSSI_D13,
EVENTOUT

JTDO/TRACESWO, TIM2_CH2,
SPI1_SCK/I2S1_CK, SPI3_SCK/
PB3(JTDO/
F7 A6 55 89 133 161 I/O FT_h0 I2S3_CK, SPI6_SCK/I2S6_CK, -
TRACESWO)
SDMMC2_D2, CRS_SYNC, UART7_RX,
EVENTOUT

NJTRST, TIM16_BKIN, TIM3_CH1,

SPI1_MISO/I2S1_SDI, SPI3_MISO/
B6 B6 56 90 134 162 PB4(NJTRST) I/O FT_h0 I2S3_SDI, SPI2_SS/I2S2_WS, -
SPI6_MISO/I2S6_SDI, SDMMC2_D3,
UART7_TX, EVENTOUT

TIM17_BKIN, TIM3_CH2, I2C1_SMBA,

SPI1_MOSI/I2S1_SDO, I2C4_SMBA,
SPI3_MOSI/I2S3_SDO, SPI6_MOSI/
C6 C6 57 91 135 163 PB5 I/O FT_h0 I2S6_SDO, FDCAN2_RX, -
OTG_HS_ULPI_D7, LCD_B5,
FMC_SDCKE1, DCMI_D10/PSSI_D10,
UART5_RX, EVENTOUT

TIM16_CH1N, TIM4_CH1,
I2C1_SCL, HDMI_CEC, I2C4_SCL,
USART1_TX, LPUART1_TX,
A5 A5 58 92 136 164 PB6 I/O FT_f FDCAN2_TX, OCTOSPIM_P1_NCS, -
DFSDM1_DATIN5, FMC_SDNE1,
DCMI_D5/PSSI_D5, UART5_TX,
EVENTOUT

TIM17_CH1N, TIM4_CH2,
I2C1_SDA, I2C4_SDA, USART1_RX,
D6 B5 59 93 137 165 PB7 I/O FT_fa LPUART1_RX, DFSDM1_CKIN5, PVD_IN
FMC_NL, DCMI_VSYNC/PSSI_RDY,
EVENTOUT

E6 C5 60 94 138 166 BOOT0 I B - VPP

TIM16_CH1, TIM4_CH3,
DFSDM1_CKIN7, I2C1_SCL,
I2C4_SCL, SDMMC1_CKIN,
B5 A2 61 95 139 167 PB8 I/O FT_fsh3 -
UART4_RX, FDCAN1_RX,
SDMMC2_D4, SDMMC1_D4, DCMI_D6/
PSSI_D6, LCD_B6, EVENTOUT

TIM17_CH1, TIM4_CH4,
DFSDM1_DATIN7, I2C1_SDA,
SPI2_SS/I2S2_WS, I2C4_SDA,
C5 B3 62 96 140 168 PB9 I/O FT_fsh3 SDMMC1_CDIR, UART4_TX, -
FDCAN1_TX, SDMMC2_D5,
I2C4_SMBA, SDMMC1_D5, DCMI_D7/
PSSI_D7, LCD_B7, EVENTOUT

LPTIM1_ETR, TIM4_ETR,
LPTIM2_ETR, UART8_RX,
D5 B4 - 97 141 169 PE0 I/O FT_h2 -
SAI2_MCK_A, FMC_NBL0, DCMI_D2/
PSSI_D2, LCD_R0, EVENTOUT

DS13196 - Rev 7 page 51/205

 STM32H7B0xB
Pin descriptions

Pin/ball name(1) (2)

UFBGA176+25 with SMPS
UFBGA169 with SMPS

Pin name
I/O
LQFP100

LQFP144

LQFP176
LQFP64

(function after Pin type Alternate functions Additional functions

structure
reset)

LPTIM1_IN2, UART8_TX, FMC_NBL1,

D4 C4 - 98 142 170 PE1 I/O FT_h2 DCMI_D3/PSSI_D3, LCD_R6, -
EVENTOUT

A4 A4 - - - - VCAP S - - -

- K10 63 99 - - VSS S - - -

C4 D4 - - 143 171 PDR_ON S - - -

B4 A3 - - - - VDDLDO S - - -

- - 64 100 144 172 VDD S - - -

TIM8_BKIN, SAI2_MCK_A,
TIM8_BKIN_COMP12, FMC_NBL2,
- - - - - 173 PI4 I/O FT_h2 -
DCMI_D5/PSSI_D5, LCD_B4,
EVENTOUT

TIM8_CH1, SAI2_SCK_A, FMC_NBL3,

- - - - - 174 PI5 I/O FT_h2 DCMI_VSYNC/PSSI_RDY, LCD_B5, -
EVENTOUT

TIM8_CH2, SAI2_SD_A, FMC_D28,

- - - - - 175 PI6 I/O FT_h2 DCMI_D6/PSSI_D6, LCD_B6, -
EVENTOUT

TIM8_CH3, SAI2_FS_A, FMC_D29,

- - - - - 176 PI7 I/O FT_h2 DCMI_D7/PSSI_D7, LCD_B7, -
EVENTOUT

- K12 - - - - VSS S - - -

- G8 - - - - VSS S - - -

- G9 - - - - VSS S - - -

- H7 - - - - VSS S - - -

- H8 - - - - VSS S - - -

- H9 - - - - VSS S - - -

- J8 - - - - VSS S - - -

- K9 - - - - VSS S - - -

- R15 - - - - VSS S - - -

1. The devices with SMPS correspond to commercial code STM32H7B0xIxxQ.

2. A non-connected I/O in a given package is configured as an output tied to VSS. Any analog peripheral connected to such a pad (such as
OPAMP, VREF+) must be disabled.
3. Pxy_C and Pxy pins/balls are two separate pads (analog switch open). The analog switch is configured through a SYSCFG register. Refer
to the product reference manual for a detailed description of the switch configuration bits.
4. There is a direct path between Pxy_C and Pxy pins/balls, through an analog switch. Pxy alternate functions are available on Pxy_C when
the analog switch is closed. The analog switch is configured through a SYSCFG register. Refer to the product reference manual for a
detailed description of the switch configuration bits.

DS13196 - Rev 7 page 52/205

 DS13196 - Rev 7

Table 8. Port A alternate functions

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

DFSDM1/2/
CEC/DCMI/ I2C4/LCD/
CEC/SPI1/ SDMMC1/ LPUART1/ FDCAN1/2/FMC/
DFSDM1/ PSSI/ DFSDM1/2/ MDIOS/
I2S1/SPI2/ SPI2/I2S2/ SAI2/ LCD/ CRS/FMC/LCD/ FMC/LCD/
Port LPTIM2/3/ DFSDM1/2/ I2C4/ OCTOSPIM_P1/ COMP/DCMI/
LPTIM1/ PDM_SAI1/ I2S2/SPI3/ SPI3/I2S3/ SDMMC1/ OCTOSPIM_P1/2/ OCTOSPIM_P1/ MDIOS/
SYS LPUART1/ I2C1/2/3/4/ OCTOSPIM_P1/ SDMMC2/ PSSI/LCD/ LCD/UART5 SYS
TIM1/2/16/17 TIM3/4/5/12/15 I2S3/ SPI6/I2S6/ SPDIFRX1/ SDMMC2/ OTG1_FS/OTG1_HS/ SDMMC1/
OCTOSPIM_P1/2/ LPTIM2/ SAI1/SPI3/I2S3/ SWPMI1/ TIM1
SPI4/5/ UART7/ SPI6/I2S6/ SPDIFRX1/ SAI2/SDMMC2/TIM8 TIM1/8
TIM8 TIM15/ UART4 TIM1/8/
SPI6/I2S6 USART1/2/3/6 UART4/5/8 TIM13/14
USART1 UART7/9/
USART10

USART2_

TIM2_CH1/ SPI6_SS/ CTS/

PA0 - TIM5_CH1 TIM8_ETR TIM15_BKIN - UART4_TX SDMMC2_CMD SAI2_SD_B - - - - EVENTOUT
TIM2_ETR I2S6_WS USART2_

NSS

USART2_ OCTOSPIM_ OCTOSPIM_

PA1 - TIM2_CH2 TIM5_CH2 LPTIM3_OUT TIM15_CH1N - - UART4_RX SAI2_MCK_B - - LCD_R2 EVENTOUT
RTS P1_IO3 P1_DQS

DFSDM2_ USART2_
PA2 - TIM2_CH3 TIM5_CH3 - TIM15_CH1 - SAI2_SCK_B - - - MDIOS_MDIO - LCD_R1 EVENTOUT
CKIN1 TX

OCTOSPIM_ USART2_ OTG_HS_

PA3 - TIM2_CH4 TIM5_CH4 TIM15_CH2 I2S6_MCK - - LCD_B2 - - - LCD_B5 EVENTOUT
P1_CLK RX ULPI_D0

SPI1_SS/ SPI3_SS/ USART2_ SPI6_SS/ LCD_

DCMI_HSYNC/
PA4 - - TIM5_ETR - - - - - - EVENTOUT
PSSI_DE
I2S1_WS I2S3_WS CK I2S6_WS VSYNC

TIM2_CH1/ SPI1_SCK/ SPI6_SCK/ OTG_HS_

PA5 PWR_NDSTOP2 - TIM8_CH1N - - - - - - PSSI_D14 LCD_R4 EVENTOUT
TIM2_ETR I2S1_CK I2S6_CK ULPI_CK

OCTOSPIM_ TIM1_BKIN_ DCMI_PIXCLK/

SPI1_MISO/ SPI6_MISO/
PA6 - TIM1_BKIN TIM3_CH1 TIM8_BKIN - - TIM13_CH1 TIM8_BKIN_COMP12 MDIOS_MDC LCD_G2 EVENTOUT
I2S1_SDI I2S6_SDI
P1_IO3 COMP12 PSSI_PDCK

DFSDM2_
SPI1_MOSI/ SPI6_MOSI/
PA7 - TIM1_CH1N TIM3_CH2 TIM8_CH1N - - TIM14_CH1 OCTOSPIM_P1_IO2 - FMC_SDNWE - LCD_VSYNC EVENTOUT
Port A

I2S1_SDO I2S6_SDO
DATIN1

USART1_ OTG_HS_ TIM8_BKIN2_

PA8 MCO1 TIM1_CH1 - TIM8_BKIN2 I2C3_SCL - - - - UART7_RX LCD_B3 LCD_R6 EVENTOUT
CK SOF COMP12

SPI2_SCK/ USART1_ DCMI_D0/

PA9 - TIM1_CH2 - LPUART1_TX I2C3_SMBA - - - - - - LCD_R5 EVENTOUT
I2S2_CK TX PSSI_D0

USART1_ OTG_HS_ DCMI_D1/

PA10 - TIM1_CH3 - LPUART1_RX - - - - - MDIOS_MDIO LCD_B4 LCD_B1 EVENTOUT
RX ID PSSI_D1

USART1_
SPI2_SS/ FDCAN1_
PA11 - TIM1_CH4 - LPUART1_CTS - UART4_RX CTS/ - - - - - LCD_R4 EVENTOUT
I2S2_WS RX
USART1_NSS

SPI2_SCK/ USART1_ FDCAN1_

PA12 - TIM1_ETR - LPUART1_RTS - UART4_TX SAI2_FS_B - - - - LCD_R5 EVENTOUT
I2S2_CK RTS TX

STM32H7B0xB
JTMS/
PA13 - - - - - - - - - - - - - - EVENTOUT
SWDIO

JTCK/
PA14 - - - - - - - - - - - - - - EVENTOUT
SWCLK
page 53/205

TIM2_CH1/ SPI1_SS/ SPI3_SS/ SPI6_SS/ UART4_

PA15 JTDI - - HDMI_CEC LCD_R3 - UART7_TX - - LCD_B6 EVENTOUT
TIM2_ETR I2S1_WS I2S3_WS I2S6_WS RTS
 Table 9. Port B alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

CEC/SPI1/ LPUART1/ CRS/FMC/LCD/ DFSDM1/2/

DFSDM1/ CEC/DCMI/PSSI/ SDMMC1/SPI2/
I2S1/SPI2/ DFSDM1/2/I2C4/ SAI2/ FDCAN1/2/FMC/LC OCTOSPIM_P1/ I2C4/LCD/MDIOS/ FMC/LCD/
Port LPTIM2/3/ DFSDM1/2/ I2S2/SPI3/I2S3/
LPTIM1/ PDM_SAI1/ I2S2/SPI3/ OCTOSPIM_P1/ SDMMC1/ D/OCTOSPIM_P1/2/ OTG1_FS/ OCTOSPIM_P1/ MDIOS/ COMP/DCMI/ LCD/
SYS LPUART1/ I2C1/2/3/4/ SPI6/I2S6/ SYS
TIM1/2/16/17 TIM3/4/5/12/15 I2S3/ SAI1/SPI3/I2S3/ SPDIFRX1/ SDMMC2/ OTG1_HS/ SDMMC2/SWPMI1/ SDMMC1/ PSSI/LCD/TIM1 UART5
OCTOSPIM_P1/2/ LPTIM2/TIM15/ UART7/
SPI4/5/ UART4 SPI6/I2S6/ SPDIFRX1/TIM13/14 SAI2/SDMMC2/ TIM1/8/UART7/9/ TIM1/8
TIM8 USART1 USART1/2/3/6
SPI6/I2S6 UART4/5/8 TIM8 USART10

OTG_HS_
PB0 - TIM1_CH2N TIM3_CH3 TIM8_CH2N DFSDM2_CKOUT - DFSDM1_CKOUT - UART4_CTS LCD_R3 OCTOSPIM_P1_IO1 - - LCD_G1 EVENTOUT
ULPI_D1

OTG_HS_ OCTOSPIM_
PB1 - TIM1_CH3N TIM3_CH4 TIM8_CH3N - - DFSDM1_DATIN1 - - LCD_R6 - - LCD_G0 EVENTOUT
ULPI_D2 P1_IO0

SPI3_MOSI/ OCTOSPIM_
PB2 RTC_OUT2 - SAI1_D1 - DFSDM1_CKIN1 - SAI1_SD_A - OCTOSPIM_P1_CLK - - - - EVENTOUT
I2S3_SDO P1_DQS

JTDO/ SPI1_SCK/ SPI6_SCK/

SPI3_SCK/
PB3 TIM2_CH2 - - - - SDMMC2_D2 CRS_SYNC UART7_RX - - - EVENTOUT
I2S3_CK
TRACESWO I2S1_CK I2S6_CK

SPI1_MISO/ SPI3_MISO/ SPI2_SS/ SPI6_MISO/

PB4 NJTRST TIM16_BKIN TIM3_CH1 - - SDMMC2_D3 - UART7_TX - - - EVENTOUT
I2S1_SDI I2S3_SDI I2S2_WS I2S6_SDI

SPI1_MOSI/ SPI3_MOSI/ SPI6_MOSI/ OTG_HS_

DCMI_D10/
PB5 - TIM17_BKIN TIM3_CH2 - I2C1_SMBA I2C4_SMBA FDCAN2_RX LCD_B5 FMC_SDCKE1 UART5_RX EVENTOUT
PSSI_D10
I2S1_SDO I2S3_SDO I2S6_SDO ULPI_D7

OCTOSPIM_
PB6 - TIM16_CH1N TIM4_CH1 - I2C1_SCL HDMI_CEC I2C4_SCL USART1_TX LPUART1_TX FDCAN2_TX DFSDM1_DATIN5 FMC_SDNE1 DCMI_D5/PSSI_D5 UART5_TX EVENTOUT
P1_NCS

DCMI_VSYNC/
PB7 - TIM17_CH1N TIM4_CH2 - I2C1_SDA - I2C4_SDA USART1_RX LPUART1_RX - - DFSDM1_CKIN5 FMC_NL - EVENTOUT
Port B

PSSI_RDY

PB8 - TIM16_CH1 TIM4_CH3 DFSDM1_CKIN7 I2C1_SCL - I2C4_SCL SDMMC1_CKIN UART4_RX FDCAN1_RX SDMMC2_D4 - SDMMC1_D4 DCMI_D6/PSSI_D6 LCD_B6 EVENTOUT

SPI2_SS/
PB9 - TIM17_CH1 TIM4_CH4 DFSDM1_DATIN7 I2C1_SDA I2C4_SDA SDMMC1_CDIR UART4_TX FDCAN1_TX SDMMC2_D5 I2C4_SMBA SDMMC1_D5 DCMI_D7/PSSI_D7 LCD_B7 EVENTOUT
I2S2_WS

SPI2_SCK/ OCTOSPIM_ OTG_HS_

PB10 - TIM2_CH3 - LPTIM2_IN1 I2C2_SCL DFSDM1_DATIN7 USART3_TX - - - - LCD_G4 EVENTOUT
I2S2_CK P1_NCS ULPI_D3

OTG_HS_
PB11 - TIM2_CH4 - LPTIM2_ETR I2C2_SDA - DFSDM1_CKIN7 USART3_RX - - - - - LCD_G5 EVENTOUT
ULPI_D4

OCTOSPIM_ OTG_HS_
SPI2_SS/
PB12 - TIM1_BKIN - I2C2_SMBA DFSDM1_DATIN1 USART3_CK - FDCAN2_RX DFSDM2_DATIN1 - TIM1_BKIN_COMP12 UART5_RX EVENTOUT
I2S2_WS
P1_NCLK ULPI_D5

SPI2_SCK/ USART3_CTS/ OTG_HS_

PB13 - TIM1_CH1N - LPTIM2_OUT DFSDM2_CKIN1 DFSDM1_CKIN1 - FDCAN2_TX - SDMMC1_D0 DCMI_D2/PSSI_D2 UART5_TX EVENTOUT
I2S2_CK USART3_NSS ULPI_D6

SPI2_MISO/
PB14 - TIM1_CH2N TIM12_CH1 TIM8_CH2N USART1_TX DFSDM1_DATIN2 USART3_RTS UART4_RTS SDMMC2_D0 - - - - LCD_CLK EVENTOUT
I2S2_SDI

SPI2_MOSI/
PB15 RTC_REFIN TIM1_CH3N TIM12_CH2 TIM8_CH3N USART1_RX DFSDM1_CKIN2 - UART4_CTS SDMMC2_D1 - - - - LCD_G7 EVENTOUT
I2S2_SDO

STM32H7B0xB
page 54/205
 Table 10. Port C alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

DFSDM1/2/
I2C4/LCD/
CEC/SPI1/ SDMMC1/ CRS/FMC/LCD/
DFSDM1/ CEC/DCMI/PSSI/ MDIOS/
I2S1/SPI2/ DFSDM1/2/I2C4/ SPI2/I2S2/ LPUART1/ FDCAN1/2/FMC/LCD OCTOSPIM_P1/ FMC/LCD/
Port LPTIM2/3/ DFSDM1/2/ OCTOSPIM_P1/ COMP/DCMI/
LPTIM1/ PDM_SAI1/ I2S2/SPI3/ OCTOSPIM_P1/ SPI3/I2S3/ SAI2/SDMMC1/ /OCTOSPIM_P1/2/ OTG1_FS/ MDIOS/
SYS LPUART1/ I2C1/2/3/4/ SDMMC2/ PSSI/LCD/ LCD/UART5 SYS
TIM1/2/16/17 TIM3/4/5/12/15 I2S3/ SAI1/SPI3/I2S3/ SPI6/I2S6/ SPDIFRX1/SPI6/ SDMMC2/ OTG1_HS/ SDMMC1/
OCTOSPIM_P1/2/ LPTIM2/TIM15/ SWPMI1/ TIM1
SPI4/5/ UART4 UART7/ I2S6/UART4/5/8 SPDIFRX1/TIM13/14 SAI2/SDMMC2/ TIM1/8
TIM8 USART1 TIM1/8/
SPI6/I2S6 USART1/2/3/6 TIM8
UART7/9/
USART10

OTG_HS_
PC0 - - - DFSDM1_CKIN0 - - DFSDM1_DATIN4 - SAI2_FS_B FMC_A25 LCD_G2 FMC_SDNWE - LCD_R5 EVENTOUT
ULPI_STP

OCTOSPIM_
SPI2_MOSI/
PC1 TRACED0 - SAI1_D1 DFSDM1_DATIN0 DFSDM1_CKIN4 SAI1_SD_A - - SDMMC2_CK - MDIOS_MDC - LCD_G5 EVENTOUT
I2S2_SDO
P1_IO4

OTG_HS_ OCTOSPIM_
SPI2_MISO/
PC2 PWR_CSTOP - - DFSDM1_CKIN1 - DFSDM1_CKOUT - - OCTOSPIM_P1_IO2 FMC_SDNE0 - - EVENTOUT
I2S2_SDI
ULPI_DIR P1_IO5

OTG_HS_ OCTOSPIM_
SPI2_MOSI/
PC3 PWR_CSLEEP - - DFSDM1_DATIN1 - - - - OCTOSPIM_P1_IO0 FMC_SDCKE0 - - EVENTOUT
I2S2_SDO
ULPI_NXT P1_IO6

PC4 - - - DFSDM1_CKIN2 - I2S1_MCK - - - SPDIFRX1_IN2 - - FMC_SDNE0 - LCD_R7 EVENTOUT

OCTOSPIM_
PC5 - - SAI1_D3 DFSDM1_DATIN2 PSSI_D15 - - - - SPDIFRX1_IN3 - FMC_SDCKE0 COMP1_OUT LCD_DE EVENTOUT
P1_DQS

DCMI_D0/
PC6 - - TIM3_CH1 TIM8_CH1 DFSDM1_CKIN3 I2S2_MCK - USART6_TX SDMMC1_D0DIR FMC_NWAIT SDMMC2_D6 - SDMMC1_D6 LCD_HSYNC EVENTOUT
PSSI_D0

DCMI_D1/
Port C

PC7 TRGIO - TIM3_CH2 TIM8_CH2 DFSDM1_DATIN3 - I2S3_MCK USART6_RX SDMMC1_D123DIR FMC_NE1 SDMMC2_D7 SWPMI_TX SDMMC1_D7 LCD_G6 EVENTOUT
PSSI_D1

FMC_NE2/ DCMI_D2/
PC8 TRACED1 - TIM3_CH3 TIM8_CH3 - - - USART6_CK UART5_RTS FMC_INT SWPMI_RX SDMMC1_D0 - EVENTOUT
FMC_NCE PSSI_D2

SWPMI_ DCMI_D3/
PC9 MCO2 - TIM3_CH4 TIM8_CH4 I2C3_SDA I2S_CKIN - - UART5_CTS OCTOSPIM_P1_IO0 LCD_G3 SDMMC1_D1 LCD_B2 EVENTOUT
SUSPEND PSSI_D3

SPI3_SCK/ DCMI_D8/
PC10 - - - DFSDM1_CKIN5 DFSDM2_CKIN0 - USART3_TX UART4_TX OCTOSPIM_P1_IO1 LCD_B1 SWPMI_RX SDMMC1_D2 LCD_R2 EVENTOUT
I2S3_CK PSSI_D8

SPI3_MISO/ DCMI_D4/
PC11 - - - DFSDM1_DATIN5 DFSDM2_DATIN0 - USART3_RX UART4_RX OCTOSPIM_P1_NCS - - SDMMC1_D3 LCD_B4 EVENTOUT
I2S3_SDI PSSI_D4

SPI6_SCK/ SPI3_MOSI/ DCMI_D9/

PC12 TRACED3 - TIM15_CH1 - DFSDM2_CKOUT USART3_CK UART5_TX - - - SDMMC1_CK LCD_R6 EVENTOUT
I2S6_CK I2S3_SDO PSSI_D9

PC13 - - - - - - - - - - - - - - - EVENTOUT

PC14 - - - - - - - - - - - - - - - EVENTOUT

PC15 - - - - - - - - - - - - - - - EVENTOUT

STM32H7B0xB
page 55/205
 Table 11. Port D alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

DFSDM1/2/
I2C4/LCD/
CEC/SPI1/ SDMMC1/ LPUART1/
DFSDM1/ CEC/DCMI/PSSI/ FDCAN1/2/FMC/LC CRS/FMC/LCD/ MDIOS/
I2S1/SPI2/ DFSDM1/2/I2C4/ SPI2/I2S2/ SAI2/ FMC/LCD/ COMP/
Port LPTIM2/3/ DFSDM1/2/ D/OCTOSPIM_P1/2/ OCTOSPIM_P1/ OCTOSPIM_P1/
LPTIM1/ PDM_SAI1/ I2S2/SPI3/ OCTOSPIM_P1/ SPI3/I2S3/ SDMMC1/ MDIOS/ DCMI/
SYS LPUART1/ I2C1/2/3/4/ SDMMC2/ OTG1_FS/ SDMMC2/ LCDUART5 SYS
TIM1/2/16/17 TIM3/4/5/12/15 I2S3/ SAI1/SPI3/I2S3/ SPI6/I2S6/ SPDIFRX1/ SDMMC1/ PSSI/LCD/
OCTOSPIM_P1/2/ LPTIM2/TIM15/ SPDIFRX1/ OTG1_HS/SAI2/ SWPMI1/
SPI4/5/ UART4 UART7/ SPI6/I2S6/ TIM1/8 TIM1
TIM8 USART1 TIM13/14 SDMMC2/TIM8 TIM1/8/
SPI6/I2S6 USART1/2/3/6 UART4/5/8
UART7/9/
USART10

FMC_D2/
PD0 - - - DFSDM1_CKIN6 - - - - UART4_RX FDCAN1_RX - UART9_CTS - LCD_B1 EVENTOUT
FMC_DA2

FMC_D3/
PD1 - - - DFSDM1_DATIN6 - - - - UART4_TX FDCAN1_TX - - - - EVENTOUT
FMC_DA3

DCMI_D11/
PD2 TRACED2 - TIM3_ETR - TIM15_BKIN - - - UART5_RX LCD_B7 - - SDMMC1_CMD LCD_B2 EVENTOUT
PSSI_D11

SPI2_SCK/ USART2_CTS/ DCMI_D5/

PD3 - - - DFSDM1_CKOUT - - - - - - FMC_CLK LCD_G7 EVENTOUT
I2S2_CK USART2_NSS PSSI_D5

PD4 - - - - - - - USART2_RTS - - OCTOSPIM_P1_IO4 - FMC_NOE - - EVENTOUT

PD5 - - - - - - - USART2_TX - - OCTOSPIM_P1_IO5 - FMC_NWE - - EVENTOUT

SPI3_MOSI/ DCMI_D10/
PD6 - - SAI1_D1 DFSDM1_CKIN4 DFSDM1_DATIN1 SAI1_SD_A USART2_RX - - OCTOSPIM_P1_IO6 SDMMC2_CK FMC_NWAIT LCD_B2 EVENTOUT
I2S3_SDO PSSI_D10

SPI1_MOSI/
PD7 - - - DFSDM1_DATIN4 - DFSDM1_CKIN1 USART2_CK - SPDIFRX1_IN0 OCTOSPIM_P1_IO7 SDMMC2_CMD FMC_NE1 - - EVENTOUT
I2S1_SDO

FMC_D13/
Port D

PD8 - - - DFSDM1_CKIN3 - - - USART3_TX - SPDIFRX1_IN1 - - - - EVENTOUT

FMC_DA13

FMC_D14/
PD9 - - - DFSDM1_DATIN3 - - - USART3_RX - - - - - - EVENTOUT
FMC_DA14

FMC_D15/
PD10 - - - DFSDM1_CKOUT DFSDM2_CKOUT - - USART3_CK - - - - - LCD_B3 EVENTOUT
FMC_DA15

FMC_A16/
USART3_CTS/
PD11 - - - LPTIM2_IN2 I2C4_SMBA - - - OCTOSPIM_P1_IO0 SAI2_SD_A - - - EVENTOUT
USART3_NSS
FMC_CLE

FMC_A17/ DCMI_D12/
PD12 - LPTIM1_IN1 TIM4_CH1 LPTIM2_IN1 I2C4_SCL - - USART3_RTS - OCTOSPIM_P1_IO1 SAI2_FS_A - - EVENTOUT
FMC_ALE PSSI_D12

DCMI_D13/
PD13 - LPTIM1_OUT TIM4_CH2 - I2C4_SDA - - - - OCTOSPIM_P1_IO3 SAI2_SCK_A UART9_RTS FMC_A18 - EVENTOUT
PSSI_D13

FMC_D0/
PD14 - - TIM4_CH3 - - - - - UART8_CTS - - UART9_RX - - EVENTOUT
FMC_DA0

FMC_D1/
PD15 - - TIM4_CH4 - - - - - UART8_RTS - - UART9_TX - - EVENTOUT
FMC_DA1

STM32H7B0xB
page 56/205
 Table 12. Port E alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

CEC/DCMI/
CEC/SPI1/ SDMMC1/ LPUART1/ DFSDM1/2/
DFSDM1/ PSSI/ DFSDM1/2/ FDCAN1/2/FMC/LC CRS/FMC/LCD/
I2S1/SPI2/ SPI2/I2S2/ SAI2/ I2C4/LCD/MDIOS/ FMC/LCD/
Port LPTIM2/3/ DFSDM1/2/ I2C4/ D/OCTOSPIM_P1/2/ OCTOSPIM_P1/
LPTIM1/ PDM_SAI1/ I2S2/SPI3/ SPI3/I2S3/ SDMMC1/ OCTOSPIM_P1/ MDIOS/ COMP/DCMI/ LCD/
SYS LPUART1/ I2C1/2/3/4/ OCTOSPIM_P1/ SDMMC2/ OTG1_FS/ SYS
TIM1/2/16/17 TIM3/4/5/12/15 I2S3/ SPI6/I2S6/ SPDIFRX1/ SDMMC2/SWPMI1/ SDMMC1/ PSSI/LCD/TIM1 UART5
OCTOSPIM_P1/2/ LPTIM2/ SAI1/SPI3/I2S3/ SPDIFRX1/ OTG1_HS/SAI2/
SPI4/5/ UART7/ SPI6/I2S6/ TIM1/8/UART7/9/ TIM1/8
TIM8 TIM15/ UART4 TIM13/14 SDMMC2/TIM8
SPI6/I2S6 USART1/2/3/6 UART4/5/8 USART10
USART1

DCMI_D2/
PE0 - LPTIM1_ETR TIM4_ETR - LPTIM2_ETR - - - UART8_Rx - SAI2_MCK_A - FMC_NBL0 LCD_R0 EVENTOUT
PSSI_D2

DCMI_D3/
PE1 - LPTIM1_IN2 - - - - - - UART8_Tx - - - FMC_NBL1 LCD_R6 EVENTOUT
PSSI_D3

PE2 TRACECLK - SAI1_CK1 - - SPI4_SCK SAI1_MCLK_A - - OCTOSPIM_P1_IO2 - USART10_RX FMC_A23 - - EVENTOUT

PE3 TRACED0 - - - TIM15_BKIN - SAI1_SD_B - - - - USART10_TX FMC_A19 - - EVENTOUT

DCMI_D4/
PE4 TRACED1 - SAI1_D2 DFSDM1_DATIN3 TIM15_CH1N SPI4_SS SAI1_FS_A - - - - - FMC_A20 LCD_B0 EVENTOUT
PSSI_D4

DCMI_D6/
PE5 TRACED2 - SAI1_CK2 DFSDM1_CKIN3 TIM15_CH1 SPI4_MISO SAI1_SCK_A - - - - - FMC_A21 LCD_G0 EVENTOUT
PSSI_D6

TIM1_BKIN2_ DCMI_D7/
PE6 TRACED3 TIM1_BKIN2 SAI1_D1 - TIM15_CH2 SPI4_MOSI SAI1_SD_A - - - SAI2_MCK_B FMC_A22 LCD_G1 EVENTOUT
COMP12 PSSI_D7

FMC_D4/
PE7 - TIM1_ETR - DFSDM1_DATIN2 - - - UART7_RX - - OCTOSPIM_P1_IO4 - - - EVENTOUT
FMC_DA4

FMC_D5/
Port E

PE8 - TIM1_CH1N - DFSDM1_CKIN2 - - - UART7_TX - - OCTOSPIM_P1_IO5 - COMP2_OUT - EVENTOUT

FMC_DA5

FMC_D6/
PE9 - TIM1_CH1 - DFSDM1_CKOUT - - - UART7_RTS - - OCTOSPIM_P1_IO6 - - - EVENTOUT
FMC_DA6

FMC_D7/
PE10 - TIM1_CH2N - DFSDM1_DATIN4 - - - UART7_CTS - - OCTOSPIM_P1_IO7 - - - EVENTOUT
FMC_DA7

FMC_D8/
PE11 - TIM1_CH2 - DFSDM1_CKIN4 - SPI4_SS - - - - SAI2_SD_B OCTOSPIM_P1_NCS - LCD_G3 EVENTOUT
FMC_DA8

FMC_D9/ COMP1_
PE12 - TIM1_CH3N - DFSDM1_DATIN5 - SPI4_SCK - - - - SAI2_SCK_B - LCD_B4 EVENTOUT
FMC_DA9 OUT

FMC_D10/
PE13 - TIM1_CH3 - DFSDM1_CKIN5 - SPI4_MISO - - - - SAI2_FS_B - COMP2_OUT LCD_DE EVENTOUT
FMC_DA10

FMC_D11/
PE14 - TIM1_CH4 - - SPI4_MOSI - - - - SAI2_MCK_B - - LCD_CLK EVENTOUT
FMC_DA11

FMC_D12/
PE15 - TIM1_BKIN - - - - - - - - USART10_CK TIM1_BKIN_COMP12 LCD_R7 EVENTOUT
FMC_DA12

STM32H7B0xB
page 57/205
 Table 13. Port F alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

DFSDM1/2/
CEC/DCMI/
LPUART1/ I2C4/LCD/
DFSDM1/ PSSI/ CEC/SPI1/ SDMMC1/SPI2/
DFSDM1/2/I2C4/ SAI2/ FDCAN1/2/FMC/LCD/ CRS/FMC/LCD/ MDIOS/ FMC/LCD/ COMP/
Port LPTIM2/3/ DFSDM1/2/ I2S1/SPI2/ I2S2/SPI3/
LPTIM1/ PDM_SAI1/ OCTOSPIM_P1/ SDMMC1/ OCTOSPIM_P1/2/ OCTOSPIM_P1/ OCTOSPIM_P1/ MDIOS/ DCMI/ LCD/
SYS LPUART1/ I2C1/2/3/4/ I2S2/SPI3/ I2S3/SPI6/ SYS
TIM1/2/16/17 TIM3/4/5/12/15 SAI1/SPI3/I2S3/ SPDIFRX1/ SDMMC2/SPDIFRX1/ OTG1_FS/OTG1_HS/ SDMMC2/ SDMMC1/ PSSI/LCD/ UART5
OCTOSPIM_P1/2/ LPTIM2/ I2S3/SPI4/5/ I2S6/UART7/
UART4 SPI6/I2S6/ TIM13/14 SAI2/SDMMC2/TIM8 SWPMI1/TIM1/8/ TIM1/8 TIM1
TIM8 TIM15/ SPI6/I2S6 USART1/2/3/6
UART4/5/8 UART7/9/
USART1
USART10

PF0 - - - - I2C2_SDA - - - - OCTOSPIM_P2_IO0 - - FMC_A0 - - EVENTOUT

PF1 - - - - I2C2_SCL - - - - OCTOSPIM_P2_IO1 - - FMC_A1 - - EVENTOUT

PF2 - - - - I2C2_SMBA - - - - OCTOSPIM_P2_IO2 - - FMC_A2 - - EVENTOUT

PF3 - - - - - - - - - OCTOSPIM_P2_IO3 - - FMC_A3 - - EVENTOUT

PF4 - - - - - - - - - OCTOSPIM_P2_CLK - - FMC_A4 - - EVENTOUT

OCTOSPIM_
PF5 - - - - - - - - - - - FMC_A5 - - EVENTOUT
P2_NCLK

PF6 - TIM16_CH1 - - - SPI5_SS SAI1_SD_B UART7_Rx - - OCTOSPIM_P1_IO3 - - - - EVENTOUT

PF7 - TIM17_CH1 - - - SPI5_SCK SAI1_MCLK_B UART7_Tx - - OCTOSPIM_P1_IO2 - - - - EVENTOUT

PF8 - TIM16_CH1N - - - SPI5_MISO SAI1_SCK_B UART7_RTS - TIM13_CH1 OCTOSPIM_P1_IO0 - - - - EVENTOUT

Port F

PF9 - TIM17_CH1N - - - SPI5_MOSI SAI1_FS_B UART7_CTS - TIM14_CH1 OCTOSPIM_P1_IO1 - - - - EVENTOUT

DCMI_D11/
PF10 - TIM16_BKIN SAI1_D3 - PSSI_D15 - - - - OCTOSPIM_P1_CLK - - - LCD_DE EVENTOUT
PSSI_D11

OCTOSPIM_ DCMI_D12/
PF11 - - - - - SPI5_MOSI - - - SAI2_SD_B - FMC_SDNRAS - EVENTOUT
P1_NCLK PSSI_D12

OCTOSPIM_
PF12 - - - - - - - - - - - FMC_A6 - - EVENTOUT
P2_DQS

PF13 - - - DFSDM1_DATIN6 I2C4_SMBA - - - - - - - FMC_A7 - - EVENTOUT

PF14 - - - DFSDM1_CKIN6 I2C4_SCL - - - - - - - FMC_A8 - - EVENTOUT

PF15 - - - - I2C4_SDA - - - - - - - FMC_A9 - - EVENTOUT

STM32H7B0xB
page 58/205
 Table 14. Port G alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

DFSDM1/2/
CEC/DCMI/ I2C4/LCD/
CEC/SPI1/ SDMMC1/ LPUART1/
PSSI/ DFSDM1/2/ CRS/FMC/LCD/ MDIOS/
DFSDM1/LPTIM2/3/ I2S1/SPI2/ SPI2/I2S2/ SAI2/ FDCAN1/2/FMC/LCD FMC/LCD/
Port DFSDM1/2/ I2C4/ OCTOSPIM_P1/ OCTOSPIM_P1/ COMP/DCMI/
LPTIM1/ PDM_SAI1/ LPUART1/ I2S2/SPI3/ SPI3/I2S3/ SDMMC1/ /OCTOSPIM_P1/2/ MDIOS/ LCD/
SYS I2C1/2/3/4/ OCTOSPIM_P1/ OTG1_FS/ SDMMC2/ PSSI/LCD/ SYS
TIM1/2/16/17 TIM3/4/5/12/15 OCTOSPIM_P1/2/ I2S3/ SPI6/I2S6/ SPDIFRX1/ SDMMC2/SPDIFRX1/ SDMMC1/ UART5
LPTIM2/ SAI1/SPI3/I2S3/ OTG1_HS/SAI2/ SWPMI1/ TIM1
TIM8 SPI4/5/ UART7/ SPI6/I2S6/ TIM13/14 TIM1/8
TIM15/ UART4 SDMMC2/TIM8 TIM1/8/
SPI6/I2S6 USART1/2/3/6 UART4/5/8
USART1 UART7/9/
USART10

PG0 - - - - - - - - - OCTOSPIM_P2_IO4 - UART9_RX FMC_A10 - - EVENTOUT

PG1 - - - - - - - - - OCTOSPIM_P2_IO5 - UART9_TX FMC_A11 - - EVENTOUT

TIM8_BKIN_
PG2 - - - TIM8_BKIN - - - - - - - FMC_A12 - - EVENTOUT
COMP12

TIM8_BKIN2_
PG3 - - - TIM8_BKIN2 - - - - - - - FMC_A13 - - EVENTOUT
COMP12

TIM1_BKIN2_ FMC_A14/
PG4 - TIM1_BKIN2 - - - - - - - - - - - EVENTOUT
COMP12 FMC_BA0

FMC_A15/
PG5 - TIM1_ETR - - - - - - - - - - - - EVENTOUT
FMC_BA1

DCMI_D12/
PG6 - TIM17_BKIN - - - - - - - - OCTOSPIM_P1_NCS - FMC_NE3 LCD_R7 EVENTOUT
PSSI_D12

DCMI_D13/
PG7 - - - - - - SAI1_MCLK_A USART6_CK - OCTOSPIM_P2_DQS - - FMC_INT LCD_CLK EVENTOUT
PSSI_D13
Port G

SPI6_SS/
PG8 - - - TIM8_ETR - - USART6_RTS SPDIFRX1_IN2 - - - FMC_SDCLK - LCD_G7 EVENTOUT
I2S6_WS

SPI1_MISO/ FMC_NE2/ DCMI_VSYNC/

PG9 - - - - - - USART6_RX SPDIFRX1_IN3 OCTOSPIM_P1_IO6 SAI2_FS_B SDMMC2_D0 - EVENTOUT
I2S1_SDI FMC_NCE PSSI_RDY

SPI1_SS/ DCMI_D2/
PG10 - - - OCTOSPIM_P2_IO6 - - - - LCD_G3 SAI2_SD_B SDMMC2_D1 FMC_NE3 LCD_B2 EVENTOUT
I2S1_WS PSSI_D2

SPI1_SCK/ DCMI_D3/
PG11 - LPTIM1_IN2 - - - - - SPDIFRX1_IN0 OCTOSPIM_P2_IO7 SDMMC2_D2 USART10_RX - LCD_B3 EVENTOUT
I2S1_CK PSSI_D3

SPI6_MISO/
PG12 - LPTIM1_IN1 - OCTOSPIM_P2_NCS - - USART6_RTS SPDIFRX1_IN1 LCD_B4 SDMMC2_D3 USART10_TX - - LCD_B1 EVENTOUT
I2S6_SDI

SPI6_SCK/ USART6_CTS/ USART10_CTS/

PG13 TRACED0 LPTIM1_OUT - - - - - - SDMMC2_D6 - - LCD_R0 EVENTOUT
I2S6_CK USART6_NSS USART10_NSS

SPI6_MOSI/
PG14 TRACED1 LPTIM1_ETR - - - - USART6_TX - OCTOSPIM_P1_IO7 SDMMC2_D7 USART10_RTS - - LCD_B0 EVENTOUT
I2S6_SDO

USART6_CTS/
DCMI_D13/
PG15 - - - - - - - - OCTOSPIM_P2_DQS - - - - EVENTOUT
PSSI_D13
USART6_NSS

STM32H7B0xB
page 59/205
 Table 15. Port H alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

DFSDM1/2/
CEC/DCMI/
LPUART1/ I2C4/LCD/
DFSDM1/ PSSI/ CEC/SPI1/ SDMMC1/SPI2/ CRS/FMC/LCD/
DFSDM1/2/I2C4/ SAI2/ FDCAN1/2/FMC/LCD MDIOS/ FMC/LCD/
Port LPTIM2/3/ DFSDM1/2/ I2S1/SPI2/ I2S2/SPI3/I2S3/ OCTOSPIM_P1/
LPTIM1/ PDM_SAI1/ OCTOSPIM_P1/ SDMMC1/ /OCTOSPIM_P1/2/ OCTOSPIM_P1/ MDIOS/ COMP/DCMI/ LCD/
SYS LPUART1/ I2C1/2/3/4/ I2S2/SPI3/ SPI6/I2S6/ OTG1_FS/ SYS
TIM1/2/16/17 TIM3/4/5/12/15 SAI1/SPI3/I2S3/ SPDIFRX1/ SDMMC2/SPDIFRX1/ SDMMC2/ SDMMC1/ PSSI/LCD/TIM1 UART5
OCTOSPIM_P1/2/ LPTIM2/ I2S3/SPI4/5/ UART7/ OTG1_HS/SAI2/
UART4 SPI6/I2S6/ TIM13/14 SWPMI1/TIM1/8/ TIM1/8
TIM8 TIM15/ SPI6/I2S6 USART1/2/3/6 SDMMC2/TIM8
UART4/5/8 UART7/9/
USART1
USART10

PH0 - - - - - - - - - - - - - - - EVENTOUT

PH1 - - - - - - - - - - - - - - - EVENTOUT

PH2 - LPTIM1_IN2 - - - - - - - OCTOSPIM_P1_IO4 SAI2_SCK_B - FMC_SDCKE0 - LCD_R0 EVENTOUT

PH3 - - - - - - - - - OCTOSPIM_P1_IO5 SAI2_MCK_B - FMC_SDNE0 - LCD_R1 EVENTOUT

OTG_HS_
PH4 - - - - I2C2_SCL - - - - LCD_G5 - - PSSI_D14 LCD_G4 EVENTOUT
ULPI_NXT

PH5 - - - - I2C2_SDA SPI5_SS - - - - - - FMC_SDNWE - - EVENTOUT

DCMI_D8/
PH6 - - TIM12_CH1 - I2C2_SMBA SPI5_SCK - - - - - - FMC_SDNE1 - EVENTOUT
PSSI_D8

DCMI_D9/
PH7 - - - - I2C3_SCL SPI5_MISO - - - - - - FMC_SDCKE1 - EVENTOUT
PSSI_D9

DCMI_HSYNC/
PH8 - - TIM5_ETR - I2C3_SDA - - - - - - - FMC_D16 LCD_R2 EVENTOUT
Port H

PSSI_DE

DCMI_D0/
PH9 - - TIM12_CH2 - I2C3_SMBA - - - - - - - FMC_D17 LCD_R3 EVENTOUT
PSSI_D0

DCMI_D1/
PH10 - - TIM5_CH1 - I2C4_SMBA - - - - - - - FMC_D18 LCD_R4 EVENTOUT
PSSI_D1

DCMI_D2/
PH11 - - TIM5_CH2 - I2C4_SCL - - - - - - - FMC_D19 LCD_R5 EVENTOUT
PSSI_D2

DCMI_D3/
PH12 - - TIM5_CH3 - I2C4_SDA - - - - - - - FMC_D20 LCD_R6 EVENTOUT
PSSI_D3

PH13 - - - TIM8_CH1N - - - - UART4_TX FDCAN1_TX - - FMC_D21 - LCD_G2 EVENTOUT

DCMI_D4/
PH14 - - - TIM8_CH2N - - - - UART4_RX FDCAN1_RX - - FMC_D22 LCD_G3 EVENTOUT
PSSI_D4

DCMI_D11/
PH15 - - - TIM8_CH3N - - - - - - - - FMC_D23 LCD_G4 EVENTOUT
PSSI_D11

STM32H7B0xB
page 60/205
 Table 16. Port I alternate functions
DS13196 - Rev 7

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

CEC/DCMI/
LPUART1/ FDCAN1/2/FMC/L
PSSI/ CEC/SPI1/ SDMMC1/SPI2/ CRS/FMC/LCD/ DFSDM1/2/I2C4/LCD/
DFSDM1/LPTIM2/3/ DFSDM1/2/I2C4/ SAI2/ CD/ FMC/LCD/
Port DFSDM1/2/ I2S1/SPI2/ I2S2/SPI3/ OCTOSPIM_P1/ MDIOS/OCTOSPIM_P1/
LPTIM1/ PDM_SAI1/ LPUART1/ OCTOSPIM_P1/ SDMMC1/ OCTOSPIM_P1/2/ MDIOS/ COMP/DCMI/ LCD/
SYS I2C1/2/3/4/ I2S2/SPI3/ I2S3/SPI6/ OTG1_FS/ SDMMC2/SWPMI1/ SYS
TIM1/2/16/17 TIM3/4/5/12/15 OCTOSPIM_P1/2/ SAI1/SPI3/I2S3/ SPDIFRX1/ SDMMC2/ SDMMC1/ PSSI/LCD/TIM1 UART5
LPTIM2/ I2S3/SPI4/5/ I2S6/UART7/ OTG1_HS/SAI2/ TIM1/8/UART7/9/
TIM8 UART4 SPI6/I2S6/ SPDIFRX1/ TIM1/8
TIM15/ SPI6/I2S6 USART1/2/3/6 SDMMC2/TIM8 USART10
UART4/5/8 TIM13/14
USART1

SPI2_SS/
DCMI_D13/
PI0 - - TIM5_CH4 - - - - - - - - FMC_D24 LCD_G5 EVENTOUT
PSSI_D13
I2S2_WS

SPI2_SCK/ DCMI_D8/
PI1 - - - TIM8_BKIN2 - - - - - - TIM8_BKIN2_COMP12 FMC_D25 LCD_G6 EVENTOUT
I2S2_CK PSSI_D8

DCMI_D9/
SPI2_MISO/
PI2 - - - TIM8_CH4 - - - - - - - FMC_D26 LCD_G7 EVENTOUT
I2S2_SDI
PSSI_D9

SPI2_MOSI/ DCMI_D10/
PI3 - - - TIM8_ETR - - - - - - - FMC_D27 - EVENTOUT
I2S2_SDO PSSI_D10

DCMI_D5/
PI4 - - - TIM8_BKIN - - - - - - SAI2_MCK_A TIM8_BKIN_COMP12 FMC_NBL2 LCD_B4 EVENTOUT
PSSI_D5

DCMI_VSYNC/
PSSI_
PI5 - - - TIM8_CH1 - - - - - - SAI2_SCK_A - FMC_NBL3 LCD_B5 EVENTOUT
Port I

RDY

DCMI_D6/
PI6 - - - TIM8_CH2 - - - - - - SAI2_SD_A - FMC_D28 LCD_B6 EVENTOUT
PSSI_D6

DCMI_D7/
PI7 - - - TIM8_CH3 - - - - - - SAI2_FS_A - FMC_D29 LCD_B7 EVENTOUT
PSSI_D7

PI8 - - - - - - - - - - - - - - - EVENTOUT

LCD_
PI9 - - - OCTOSPIM_P2_IO0 - - - - UART4_RX FDCAN1_RX - - FMC_D30 - EVENTOUT
VSYNC

LCD_
PI10 - - - OCTOSPIM_P2_IO1 - - - - - - - - FMC_D31 PSSI_D14 EVENTOUT
HSYNC

OTG_HS_
PI11 - - - OCTOSPIM_P2_IO2 - - - - - LCD_G6 - - PSSI_D15 - EVENTOUT
ULPI_DIR

STM32H7B0xB
page 61/205
 STM32H7B0xB
Electrical characteristics

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of junction
temperature, supply voltage and frequencies by tests in production on 100% of the devices with an junction
temperature at TJ = 25 °C and TJ = TJmax (given by the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics are indicated in
the table footnotes. Based on characterization, the minimum and maximum values refer to sample tests and
represent the mean value plus or minus three times the standard deviation (mean±3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TJ = 25 °C, VDD = 3.3 V (for the 1.62 V ≤ VDD ≤ 3.6 V
voltage range). They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from a standard diffusion
lot over the full temperature range, where 95% of the devices have an error less than or equal to the value
indicated (mean±2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 10. Pin loading conditions.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 11. Pin input voltage.

Figure 10. Pin loading conditions Figure 11. Pin input voltage

MCU pin MCU pin

C = 50 pF V IN

DS13196 - Rev 7 page 62/205

 STM32H7B0xB
Parameter conditions

6.1.6 Power supply scheme

Figure 12. Power supply scheme

VDDSMPS VDDSMPS

10 μF 4.7 μ F 2.2 μH
VLXSMPS SMPS
Switched Mode
4.7 μF 4.7 μF
100 pF or 200 pF Power Supply
VFBSMPS step down
converter
VSSSMPS
SMPS enabled SMPS disabled
VCAP1/2
2.2 μF 100 nF(1) Core domain
LDO
VCAP3 Voltage
LDO enabled LDO disabled
VDDLDO regulator

100nF
VDD
Two different possible use cases PDR_ON
POR/PDR

VDDMMC VDDMMC
100
1 μF
nF 100 nF VDDMMC
IOs

Two different possible use cases VDD

100 nF(1) VDD

IOs

VDD VDD
4.7 μF
100 nF(1) VDD
domain
VSS
Power switch

Two different possible use cases

Backup
VBAT domain
Battery 1 μF 100 nF

BKUP
IOs

5V VDD50USB
USB regulator
3.3V
4.7 μF VDD33USB

1 μF
1 μF 100 nF USB FS
IOs
Two different possible use cases
VDDA VDDA
Analog domain
1 μF 100 nF
47W
VREF+ VREF+

1 μF 1 μF 100 nF VREF-
VSSA
Three different possible use cases

Defines different use case options

Define power domaines

DS13196 - Rev 7 page 63/205

 STM32H7B0xB
Absolute maximum ratings

1. 100 nF filtering capacitor on each package pin.

2. A tolerance of +/- 20% is acceptable on decoupling capacitors.
Note: Refer to Getting started with STM32H7A3/7B3 and STM32H7B0 hardware development(AN5307) for more
details.
Caution: Each power supply pair (VDD/VSS, VDDA/VSSA ...) must be decoupled with filtering ceramic capacitors as shown
above. These capacitors must be placed as close as possible to, or below, the appropriate pins on the underside
of the PCB to ensure good operation of the device. It is not recommended to remove filtering capacitors to
reduce PCB size or cost. This might cause incorrect operation of the device.

6.1.7 Current consumption measurement

Figure 13. Current consumption measurement scheme

LDO ON SMPS ON

IDD_VBAT IDD_VBAT
VBAT VBAT

VDDMMC VDDMMC
IDD IDD
VDD VDD

VDDLDO VDDSMPS

VDDA VDDA

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 17. Voltage characteristics, Table 18. Current
characteristics, and Table 19. Thermal characteristics may cause permanent damage to the device. These are
stress ratings only and the functional operation of the device at these conditions is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability. Device mission profile (application
conditions) is compliant with JEDEC JESD47 Qualification Standard, extended mission profiles are available on
demand.

Table 17. Voltage characteristics

All main power (VDD, VDDA, VDD33USB, VDDMMC, VDDSMPS, VBAT) and ground (VSS, VSSA) pins must always be connected to the
external power supply, in the permitted range.
Symbols Ratings Min Max Unit

External main supply voltage (including VDD, VDDLDO, VDDSMPS,

VDDX − VSS −0.3 4.0 V
VDDA, VDD33USB, VDDMMC, VBAT, VREF+)

Min(VDD, VDDA,
Input voltage on FT_xxx pins VSS−0.3 VDD33USB, VDDMMC, V
VBAT) +4.0(2)(3)
VIN(1) Input voltage on TT_xx pins VSS−0.3 4.0 V

Input voltage on BOOT0 pin VSS 9.0 V

Input voltage on any other pins VSS−0.3 4.0 V

|ΔVDDX| Variations between different VDDX power pins of the same domain - 50 mV

DS13196 - Rev 7 page 64/205

 STM32H7B0xB
Absolute maximum ratings

Symbols Ratings Min Max Unit

|VSSx−VSS| Variations between all the different ground pins - 50 mV

1. VIN maximum value must always be respected. Refer to Table 62. I/O current injection susceptibility for the maximum
allowed injected current values.
2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
3. This formula has to be applied on power supplies related to the I/O structure described by the pin definition table.

Table 18. Current characteristics

Symbols Ratings Max Unit

ΣIVDD Total current into sum of all VDD power lines (source)(1) 620

ΣIVSS Total current out of sum of all VSS ground lines (sink)(1) 620

IVDD Maximum current into each VDD power pin (source)(1) 100

IVSS Maximum current out of each VSS ground pin (sink)(1) 100

Output current sunk or sourced by any I/O and control pin 20

IIO
Output current sunk or sourced by Pxy_C pin 1 mA

Total output current sunk by sum of all I/Os and control pins(2) 140
ΣI(PIN)
Total output current sourced by sum of all I/Os and control pins(2) 140

Injected current on FT_xxx, TT_xx, RST and B pins except PA4, PA5 −5/+0
IINJ(PIN)(3)(4)
Injected current on PA4, PA5 −0/0
ΣIINJ(PIN) Total injected current (sum of all I/Os and control pins)(5) ±25

1. All main power (VDD, VDDA, VDDSMPS, VDDLDO, VDD33USB, VDDMMC) and ground (VSS, VSSA) pins must always be
connected to the external power supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
3. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 17. Voltage characteristics for the maximum allowed input voltage values.
4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
5. When several inputs are submitted to a current injection, the maximum ∑IINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 19. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range −65 to +150

°C
TJmax Maximum junction temperature 130(1)

1. The junction temperature is limited to 105 °C in the VOS0 voltage range.

DS13196 - Rev 7 page 65/205

 STM32H7B0xB
Operating conditions

6.3 Operating conditions

6.3.1 General operating conditions

Table 20. General operating conditions

Symbol Parameter Operating conditions Min Typ Max Unit

VDD Standard operating voltage - 1.62(1) - 3.6

1.62(1) - 3.6
VDDLDO Supply voltage for the internal regulator VDDLDO ≤ VDD
1.2(2) - 3.6

Supply voltage for the internal SMPS Step-down

VDDSMPS VDDSMPS = VDD 1.62(1) - 3.6
converter
Indenpent MMC I/Os
1.62(1) - 3.6
used
Standard operating voltage for independent MMC
VDDMMC Independent MMC I/Os
I/Os
not used VDDMMC = 1.62(1) - 3.6
VDD

USB used 3.0 - 3.6

VDD33USB Standard operating voltage, USB domain
USB not used 0 - 3.6
ADC or COMP used 1.62 -
DAC used 1.8 -
OPAMP used 2.0 -
VDDA Analog operating voltage 3.6
VREFBUF used 1.8 -
ADC, DAC, OPAMP,
COMP, VREFBUF not 0 -
used
VBAT Backup operating voltage - 1.2 - 3.6
V
TT_xx I/O −0.3 - VDD+0.3

BOOT0 0 - 9
Min(VDD,
VIN I/O Input voltage VDDA,
All I/O except BOOT0 VDD33USB,
−0.3 -
and TT_xx VDDMMC)
+3.6 V <
5.5 V(3)
VOS3 (max frequency
0.95 1.0 1.05
88 MHz)
VOS2 (max frequency
1.05 1.10 1.15
160 MHz)
Internal regulator ON (LDO or SMPS)(4)
VOS1 (max frequency
1.15 1.20 1.25
225 MHz)
VOS0 (max frequency
VCORE 1.25 1.30 1.35
280 MHz)
VOS3 (max frquency
0.97 1.0 1.05
88 MHz)

Regulator OFF: external VCORE voltage must be VOS2 (max frequency

1.07 1.10 1.15
supplied from external regulator on VCAP pins 160 MHz)
VOS1 (max frequency
1.17 1.20 1.25
225 MHz)

DS13196 - Rev 7 page 66/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Operating conditions Min Typ Max Unit

Regulator OFF: external VCORE voltage must be VOS0 (max frequency
VCORE 1.27 1.30 1.33 V
supplied from external regulator on VCAP pins 280 MHz)
Maximum power
–40 - 85
dissipation
TA Ambient temperature for the suffix 6 version °C
Low-power
–40 - 105
dissipation(5)
VOS0 –40 - 105
TJ Junction temperature range °C
VOS3, VOS2, VOS1 –40 - 130

1. When a reset occurs, the functionality is guaranteed down to VPDRmax or to the specified VDDmin when the PDR is
OFF. The PDR can only be switched OFF though the PDR_ON pin that is not available in all packages (refer to
Table 7. STM32H7B0xB pin/ball definition)
2. Only for power-up sequence when the SMPS step-down converter is configured to supply the LDO.
3. This formula has to be applied on power supplies related to the I/O structures described by the pin definition table.
4. At startup, the external VCORE voltage must remain higher or equal to 1.10 V before disabling the internal regulator (LDO).
5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Section 7.7 Thermal characteristics).

Table 21. Maximum allowed clock frequencies

Symbol (1)(2) Parameter VOS0 VOS1 VOS2 VOS3 Unit

fCPU CPU 280 225 160 88

fACLK AXI 280 225 160 88

fHCLK AHB 280 225 160 88

fPCLK APB 140 112.5 80 44

fltdc_ker_ck LTDC 140 112.5 80 44

ffmc_ker_ck FMC 280 225 160 88

foctospi_ker_clk OCTOSPI1/2 280 225 160 88

fsdmmc_ker_ck SDMMC1/2 280 225 160 88

fDFSDM1_Aclk 140 112.5 80 44

DFSDM1
fDFSDM1_Clk 140 112.5 80 44

fDFSDM2_Aclk 140 112.5 80 44

DFSDM2
fDFSDM2_Clk 140 112.5 80 44 MHz
ffdcan_ker_ck FDCAN 140 112.5 80 44

fcec_ker_ck HDMI_CEC 66 66 66 44

fI2C_ker_ck I2C[1:4] 140 112.5 80 44

flptim_ker_ck LPTIM[1:3] 140 112.5 80 44

frcc_tim_ker_ck TIM[2:7],TIM[12:14] 280 225 160 88

frcc_tim_ker_ck PWM1,PWM8,TIM[15:17] 280 225 160 88

frng_clk RNG 140 112.5 80 44

fsai_a_ker_ck
SAI1 150 150 80 80
fsai_b_ker_ck

fsai_a_ker_ck
SAI2 150 150 80 80
fsai_b_ker_ck

DS13196 - Rev 7 page 67/205

 STM32H7B0xB
Operating conditions

Symbol (1)(2) Parameter VOS0 VOS1 VOS2 VOS3 Unit

fspdifrx_ker_ck SPDIFRX1 280 225 160 88

fspi_ker_ck SPI[1:6] 280 225 160 88

flpuart_ker_ck LPUART1 140 112.5 80 44

fusart_ker_ck USART1/2/3/6/10 280 225 160 88

fuart_ker_ck UART4/5/7/8/9 280 225 160 88

MHz
fadp_clk USBOTG 48 48 48 48

fulpi_ck USB1ULPI 66 66 66 66

fadc_ker_ck ADC1/2 50 50 50 50

fdac_pclk DAC1/2 140 112.5 80 44

frtc_ker_ck RTC 1 1 1 1

1. Guaranteed by design.
2. The maximum kernel clock frequencies can be limited by the maximum peripheral clock frequency (refer each peripheral
electrical characteristics).

Table 22. Supply voltage and maximum frequency configuration

Power scale VCORE source Max TJ (°C) Max frequency (MHz) Min VDD (V)

VOS0 LDO/SMPS 105 280 1.71

VOS1 LDO/SMPS 130 225 1.62
VOS2 LDO/SMPS 130 160 1.62
VOS3 LDO/SMPS 130 88 1.62
SVOS4 LDO/SMPS 130 N/A 1.62
SVOS5 LDO/SMPS 130 N/A 1.62

DS13196 - Rev 7 page 68/205

 STM32H7B0xB
Operating conditions

6.3.2 VCAP external capacitor

Stabilization for the embedded LDO regulator is achieved by connecting an external capacitor CEXT to the VCAPx
pin. CEXT is specified in Table 23. VCAP operating conditions. Two external capacitors must be connected to
VCAP pins (refer to Getting started with STM32H7A3/7B3 and STM32H7B0 hardware development (AN5307).

Figure 14. External capacitor CEXT

ESR

R Leak

1. Legend: ESR is the equivalent series resistance.

Table 23. VCAP operating conditions

When the internal LDO voltage regulator is switched OFF, the two 2.2 µF VCAP capacitors are not required. However all VCAPx
package pins must be connected together and it is recommended to add a ceramic filtering capacitor of 100 nF as close as
possible to each VCAPx pin.
Symbol Parameter Conditions

CEXT External capacitor for LDO enabled 2.2 µF(1)(2)

ESR ESR of external capacitor < 100 mΩ

1. This value corresponds to CEXT typical value. A variation of ±20% is tolerated.

2. If the VCAP3 pin is available (depending on the package), it must be connected to the other VCAP pins. No additional
capacitor is required.

6.3.3 SMPS step-down converter

The devices embed a high power efficiency SMPS step-down converter requiring external components. Refer
to Getting started with STM32H7A3/7B3 and STM32H7B0 hardware development (AN5307) for the required
components and tradeoffs.

Table 24. Characteristics of SMPS step-down converter external components

Symbol Parameter Conditions

Capacitance of external capacitor on VDDSMPS 4.7 µF

CIN
ESR of external capacitor 100 mΩ
Cfilt Capacitance of external capacitor on VLXSMPS pin 220 pF

Capacitance of external capacitor on VFBSMPS pin 10 µF

COUT
ESR of external capacitor 20 mΩ
L Inductance of external Inductor on VLXSMPS pin 2.2 µH
- Serial DC resistor 150 mΩ
ISAT DC current at which the inductance drops 30% from its value without current. 1.7 A

Average current for a 40 °C rise: rated current for which the temperature of the inductor is raised 40°C
IRMS 1.4 A
by DC current

DS13196 - Rev 7 page 69/205

 STM32H7B0xB
Operating conditions

Table 25. SMPS step-down converter characteristics for external usage

Symbol Conditions Min Typ Max Unit

VOUT = 1.8 V 2.3 - 3.6

VDDSMPS(1) V
VOUT = 2.5 V 3 - 3.6

2.25 2.5 2.75

VOUT(2) IOUT=600 mA V
1.62 1.8 1.98
internal and external usage - - 600
IOUT mA
External usage only(3) - - 600

RDSON - - 100 120 mΩ

IDDSMPS_Q Quiescent current - 220 - µA

VOUT = 1.8 V - 270 405

TSMPS_START µs
VOUT = 2.5 V - 360 540

1. The switching frequency is 2.4 MHz±10%

2. Including line transient and load transient.
3. These characteristics are given for SMPSEXTHP bit is set in the PWR_CR3 register.

The SMPS current consumption can be determined using the following formula based on the maximum LDO
current consumption provided in Section 6.3.7 Supply current characteristics:
IDDSMPS = IDDLDO × VCORE ÷ VDD × efficency
where
IDDLDO is the current in LDO configuration given in the following tables
VCORE is the digital core supply (VCAP)
Efficiency is defined in the following curves.

DS13196 - Rev 7 page 70/205

 STM32H7B0xB
Operating conditions

Figure 15. SMPS efficicency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode,
TJ = 30 °C

Efficiency (%)

100

90

VDDSMPS = 1.8V, VOS0

VDDSMPS = 3.3V, VOS0
80 VDDSMPS = 1.8V, VOS1
VDDSMPS = 3.3V, VOS1
VDDSMPS = 1.8V, VOS2
70 VDDSMPS = 3.3V, VOS2
VDDSMPS = 1.8V, VOS3
VDDSMPS = 3.3V, VOS3
60

50

40

30
Current (mA)
1 10 100 1000

Figure 16. SMPS efficiency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode,
TJ = 130 °C

Efficiency (%)
100

90

VDDSMPS = 1.8V, VOS0

80 VDDSMPS = 3.3V, VOS0
VDDSMPS = 1.8V, VOS0
VDDSMPS = 3.3V, VOS0
70 VDDSMPS = 1.8V, VOS1
VDDSMPS = 3.3V, VOS1
VDDSMPS = 1.8V, VOS2
60
VDDSMPS = 3.3V, VOS2
VDDSMPS = 1.8V, VOS3
VDDSMPS = 3.3V, VOS3
50

40

30 Current (mA)
1 10 100 1000

DS13196 - Rev 7 page 71/205

 STM32H7B0xB
Operating conditions

Figure 17. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5),
TJ = 30 °C

Efficiency (%)

100

90

80

70

60 VDDSMPS = 1.8V, SVOS5

VDDSMPS = 3.3V, SVOS5

50
VDDSMPS = 1.8V, SVOS4

40 VDDSMPS = 3.3V, SVOS4

VDDSMPS = 1.8V, SVOS3

30
VDDSMPS = 3.3V, SVOS3

20

10

0 Current (mA)
0.01 0.1 1 10 100

Figure 18. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5),
TJ = 130 °C

Efficiency (%)

100

90

80

70

60 VDDSMPS = 1.8V, SVOS5

VDDSMPS = 3.3V, SVOS5

50
VDDSMPS = 1.8V, SVOS4

40 VDDSMPS = 3.3V, SVOS4

VDDSMPS = 1.8V, SVOS3

30
VDDSMPS = 3.3V, SVOS3

20

10

0 Current (mA)
0.01 0.1 1 10 100

DS13196 - Rev 7 page 72/205

 STM32H7B0xB
Operating conditions

Figure 19. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5),
TJ = 30 °C

Efficiency (%)
100

90

80

70

VDDSMPS = 1.8V, SVOS5

60 in Stop2 mode
VDDSMPS = 3.3V, SVOS5
in Stop2 mode
50 VDDSMPS = 1.8V, SVOS4
in Stop2 mode
VDDSMPS = 3.3V, SVOS4
40 in Stop2 mode
VDDSMPS = 1.8V, SVOS3
in Stop2 mode
30 VDDSMPS = 3.3V, SVOS3
in Stop2 mode

20

10

0 Current (mA)
0.01 0.1 1 10 100

Figure 20. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5),
TJ = 130 °C

Efficiency (%)
100

90

80

70

VDDSMPS = 1.8V, SVOS5

60 in Stop2 mode
VDDSMPS = 3.3V, SVOS5
in Stop2 mode
50
VDDSMPS = 1.8V, SVOS4
in Stop2 mode
VDDSMPS = 3.3V, SVOS4
40 in Stop2 mode
VDDSMPS = 1.8V, SVOS3
in Stop2 mode
30 VDDSMPS = 3.3V, SVOS3
in Stop2 mode

20

10

0 Current (mA)
0.01 0.1 1 10 100

6.3.4 Operating conditions at power-up / power-down

Subject to general operating conditions for TA.
Operating conditions at power-up / power-down (regulator ON)

DS13196 - Rev 7 page 73/205

 STM32H7B0xB
Operating conditions

Table 26. Operating conditions at power-up / power-down (regulator ON)

Symbol Parameter Min Max Unit

VDD rise time rate 0 ∞

tVDD
VDD fall time rate 10 ∞

VDDA rise time rate 0 ∞

tVDDA
VDDA fall time rate 10 ∞
µs/V
VDDUSB rise time rate 0 ∞
tVDDUSB
VDDUSB fall time rate 10 ∞

VDDMMC rise time rate 0 ∞

VDDMMC
VDDMMC fall time rate 10 ∞

6.3.5 Embedded reset and power control block characteristics

The parameters given in Table 27. Reset and power control block characteristics are derived from tests performed
under ambient temperature and VDD supply voltage conditions summarized in Table 20. General operating
conditions.

Table 27. Reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

tRSTTEMPO(1) Reset temporization after POR released - - 377 550 µs

Rising edge(1) 1.62 1.67 1.71

VPOR/PDR Power-on/power-down reset threshold
Falling edge 1.58 1.62 1.68
Rising edge 2.04 2.10 2.15
VBOR1 Brown-out reset threshold 1
Falling edge 1.95 2.00 2.06
Rising edge 2.34 2.41 2.47
VBOR2 Brown-out reset threshold 2
Falling edge 2.25 2.31 2.37
Rising edge 2.63 2.70 2.78
VBOR3 Brown-out reset threshold 3
Falling edge 2.54 2.61 2.68
Rising edge 1.90 1.96 2.01
VPVD0 Programmable Voltage Detector threshold 0
Falling edge 1.81 1.86 1.91
Rising edge 2.05 2.10 2.16
VPVD1 Programmable Voltage Detector threshold 1 V
Falling edge 1.96 2.01 2.06
Rising edge 2.19 2.26 2.32
VPVD2 Programmable Voltage Detector threshold 2
Falling edge 2.10 2.15 2.21
Rising edge 2.35 2.41 2.47
VPVD3 Programmable Voltage Detector threshold 3
Falling edge 2.25 2.31 2.37
Rising edge 2.49 2.56 2.62
VPVD4 Programmable Voltage Detector threshold 4
Falling edge 2.39 2.45 2.51
Rising edge 2.64 2.71 2.78
VPVD5 Programmable Voltage Detector threshold 5
Falling edge 2.55 2.61 2.68
Rising edge 2.78 2.86 2.94
VPVD6 Programmable Voltage Detector threshold 6
Falling edge in Run mode 2.69 2.76 2.83
VPOR/PDR Hysteresis for power-on/power-down reset Hysteresis in Run mode - 43 - mV

DS13196 - Rev 7 page 74/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min Typ Max Unit

Vhyst_BOR_PVD Hysteresis voltage of BOR Hysteresis in Run mode - 100 - mV

IDD_BOR_PVD (1) BOR and PVD consumption from VDD - - - 0.630

µA
IDD_POR_PDR POR and PDR consumption from VDD - 0.8 - 1.2

Rising edge 1.66 1.71 1.76

VAVM_0 Analog voltage detector for VDDA threshold 0
Falling edge 1.56 1.61 1.66
Rising edge 2.06 2.12 2.19
VAVM_1 Analog voltage detector for VDDA threshold 1
Falling edge 1.96 2.02 2.08
V
Rising edge 2.42 2.50 2.58
VAVM_2 Analog voltage detector for VDDA threshold 2
Falling edge 2.35 2.42 2.49
Rising edge 2.74 2.83 2.91
VAVM_3 Analog voltage detector for VDDA threshold 3
Falling edge 2.64 2.72 2.80
Vhyst_VDDA Hysteresis of VDDA voltage detector - - 100 - mV

IDD_PVM PVM consumption from VDD(1) - - - 0.25 µA

IDD_VDDA Voltage detector consumption on VDDA(1) Resistor bridge - - 2.5 µA

1. Guaranteed by design.

6.3.6 Embedded reference voltage

The parameters given in Table 28 are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 20. General operating conditions.

Table 28. Embedded reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT(1) Internal reference voltages −40 °C < TJ < 130 °C 1.180 1.216 1.255 V

ADC sampling time when reading the internal

tS_vrefint(2)(3) - 4.3 - -
reference voltage
µs
(3)
VBAT sampling time when reading the internal
tS_vbat - 9 - -
VBAT reference voltage

Start time of reference voltage buffer when

tstart_vrefint(3) - - - 4.4 µs
ADC is enable

Irefbuf(3) Reference Buffer consumption for ADC VDD = 3.3 V 9 13.5 23 µA

Internal reference voltage spread over the

ΔVREFINT(3) −40 °C < TJ < 130 °C - 5 15 mV
temperature range
Average temperature
Tcoeff Average temperature coefficient - 20 70 ppm/°C
coefficient
VDDcoeff Average Voltage coefficient 3.0 V < VDD < 3.6 V - 10 1370 ppm/V

VREFINT_DIV1 1/4 reference voltage - - 25 -

VREFINT_DIV2 1/2 reference voltage - - 50 - % VREFINT

VREFINT_DIV3 3/4 reference voltage - - 75 -

1. Guaranteed by design and tested in production at 3.3 V

2. The shortest sampling time for the application can be determined by multiple iterations.
3. Guaranteed by design.

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 STM32H7B0xB
Operating conditions

Table 29. Internal reference voltage calibration values

Symbol Parameter Memory address

VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA = 3.3 V 08FFF810 - 08FFF812

Table 30. USB regulator characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDD50USB Supply voltage - 4 5 5,5 V

IDD50USB Current consumption - - 13.5 - µA

VREGOUTV33V Regulated output voltage - 3 - 3.6 V

IOUT Output current load sinked by USB block - - - 20 mA

TWKUP Wakeup time - - 120 170 µs

6.3.7 Supply current characteristics

The current consumption is a function of several parameters and factors such as the operating voltage, ambient
temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program
location in memory and executed binary code.
The current consumption is measured as described in Figure 13. Current consumption measurement scheme.
All the run-mode current consumption measurements given in this section are performed with a CoreMark code.

Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in analog input mode.
• All peripherals are disabled except when explicitly mentioned.
• The flash memory access time is adjusted with the minimum wait states number, depending on the fACLK
frequency (refer to the table “Number of wait states according to CPU clock (frcc_cpu_ck) frequency and
VCORE range” available in the reference manual).
• When the peripherals are enabled, the AHB clock frequency is the CPU frequency divided by 2 and the APB
clock frequency is AHB clock frequency divided by 2.
The parameters given in the below tables are derived from tests performed under the supply voltage conditions
summarized in Table 20. General operating conditions and unless otherwise specified at ambient temperature.
The maximum current consumptions provided in the following tables are given for LDO regulator ON. To obtain
the maximum SMPS current consumption, the efficiency curves can be used with the maximum LDO current
consumption as entry value (refer to Section 6.3.3 SMPS step-down converter).

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Table 31. Inrush current and inrush electric charge characteristics for LDO and SMPS
1. The typical values are given for VDDLDO = VDDSMPS = 3.3 V and for typical decoupling capacitor values of CEXT and COUT.
2. The product consumption on VDDCORE is not taken into account in the inrush current and inrush electric charge.
Symbol Parameter Conditions Min Typ Max Unit

on VDDLDO (1) (2)

- 55 96
Inrush current on voltage regulator power-on
(POR or wakeup from Standby) on VDDSMPS(3) SMPS supplies the VDDCORE - 25 92(4)

SMPS supplies internal LDO VOUT =

- 135(4)
1.8 V(5)
45
SMPS supplies internal LDO VOUT =
- 100(4)
Inrush current on voltage regulator power-on 2.5 V(5)
on VDDSMPS(3)
IRUSH (POR) SMPS supplies external circuit VOUT mA
- 70(4)
= 1.8 V(5)
25
SMPS supplies external circuit VOUT
- 50(4)
= 2.5 V(5)
SMPS supplies internal LDO VOUT =
- 70 200(4)
Inrush current on voltage regulator power-on 1.8 V
on VDDSMPS (3)
(wakeup from Standby) SMPS supplies internal LDO VOUT =
- 95 210(4)
2.5 V

on VDDLDO(1) - 4.4 5.3(2)

Inrush current on voltage regulator power-on
(POR or wakeup from Standby) on VDDSMPS(3) SMPS supplies the VDDCORE - 2.9 7(2)

SMPS supplies internal LDO VOUT =

- 7.5(2)
1.8 V(5)
4.0
SMPS supplies internal LDO VOUT =
- 5.7(2)
Inrush current on voltage regulator power-on 2.5 V(5)
on VDDSMPS (3)
QRUSH (POR) SMPS supplies external circuit VOUT μC
- 5.2(2)
= 1.8 V(5)
2.9
SMPS supplies external circuit VOUT
- 4(2)
= 2.5 V(5)
SMPS supplies internal LDO VOUT =
- 8.0 15(2)
Inrush current on voltage regulator power-on 1.8 V
on VDDSMPS(3)
(wakeup from Standby) SMPS supplies internal LDO VOUT =
- 14.5 20.5(2)
2.5 V

1. The inrush current and inrush electric charge on VDDLDO are not present in Bypass mode or when the SMPS supplies VDDCORE.
2. The maximum value is given for the maximum decoupling capacitor CEXT.
3. The inrush current and inrush electric charge on VDDSMPS is not present if the external component (L or COUT) is not present, that is if the
SMPS is not used.
4. The maximum value is given for the maximum decoupling capacitor COUT and the minimum VDDSMPS voltage.
5. The inrush current and inrush electric charge due to the transition from 1.2 V to the final VOUT value (1.8 V or 2.5 V) is not taken into
account.

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Table 32. Typical and maximum current consumption in Run mode, code with data processing running from ITCM,
regulator ON
Data are in DTCM for best computation performance. In this case, the cache has no influence on consumption.
Max(1)(2)
frcc_cpu_ck Typ Typ
Symbol Parameter Conditions TJ = TJ = TJ = TJ = unit
(MHz) LDO SMPS
25 °C 85 °C 105 °C 130 °C

280 69.5 34.0 77 106 128 173

VOS0
225 56.5 27.5 64 92 114 159
225 52.0 24.0 58 80 98 136
200 46.5 21.0 52 75 93 130
VOS1 180 42 19.0 47 70 88 125
168 39 18.0 45 67 85 122
All peripherals
160 37.5 17.0 43 65 83 120
disabled
160 34.0 14.5 38 56 70 101
VOS2 144 30.5 13.0 35 52 67 97

Supply current in 88 19.0 8.5 23 41 55 85

IDD mA
Run mode 88 18.0 7.5 21 35 46 71
VOS3 60 12.5 5.5 16 29 41 66
25 6.0 3.0 9 23 34 59
280 133.5 63.5 142 173 196 242
VOS0
225 108.0 51.5 115 146 168 214
225 99.0 45.0 105 129 147 185
All peripherals VOS1
160 71.5 32.5 77 100 118 156
enabled
160 65.0 27.5 69 87 102 132
VOS2
88 41.5 17.5 45 63 77 108
VOS3 88 38.0 15.0 41 55 66 91

1. Guaranteed by characterization results, unless otherwise specified.

2. The maximum values are given for LDO regulator ON. Refer to Section 6.3.3 SMPS step-down converter for the SMPS maximum current
consumption.

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Table 33. Typical and maximum current consumption in Run mode, code with data processing running from flash
memory, cache ON

Max(1)(2)
frcc_cpu_ck Typ Typ
Symbol Parameter Conditions TJ = TJ= TJ = TJ = unit
(MHz) LDO(1) SMPS(1)
25 °C 85 °C 105 °C 130 °C

280 69.0 33.5 77 106 128 173

VOS0
225 56.0 27.0 64 92 114 158
225 51.5 23.5 58 80 98 136
200 46.5 21.5 52 75 92 129
VOS1 180 42.0 19.0 47 70 88 125
168 39.0 18.0 45 67 85 122
All peripherals
160 37.5 17.0 43 65 83 120
disabled
160 34.0 14.5 38 56 70 101
VOS2 144 30.5 13.0 35 53 67 97

Supply current in 88 19.0 8.5 23 41 55 85

IDD mA
Run mode 88 17.5 7.5 21 35 46 71
VOS3 60 12.5 5.0 16 29 41 66
25 6.0 2.5 9 23 34 59
280 132.5 63.5 142 173 195 241
VOS0
225 107.5 51.0 115 145 168 213
225 99.0 44.5 105 129 147 185
All peripherals VOS1
160 71.5 32.5 77 100 118 155
enabled
160 65.0 27.5 69 87 102 132
VOS2
88 41.5 17.5 45 63 77 108
VOS3 88 38.0 15.0 41 55 66 91

1. Guaranteed by characterization results, unless otherwise specified.

2. The maximum values are given for LDO regulator ON. Refer to Section 6.3.3 SMPS step-down converter for the SMPS maximum current
consumption.

Table 34. Typical and maximum current consumption in Run mode, code with data processing running from flash
memory, cache OFF

Max(1)(2)
frcc_cpu_ck Typ Typ
Symbol Parameter Conditions TJ = TJ = TJ = TJ = Unit
(MHz) LDO(1) SMPS(1)
25 °C 85 °C 105 °C 130 °C

280 56.0 28.0 63 91 113 157

VOS0
225 47.0 23.5 54 82 103 148
225 43.0 21.0 49 71 89 126
All peripherals VOS1
160 34.0 16.5 39 62 79 116
disabled
160 29.5 13.5 34. 51 65 96
Supply current in VOS2
IDD mA
Run mode 88 18.5 9.0 23 40 54 84
VOS3 88 16.5 7.5 19 33 44 69
280 119.5 58.0 127 157 180 225
VOS0
All peripherals 225 98.5 48.0 105 135 157 203
enabled
VOS1 225 90.5 42.0 96 120 138 176

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Max(1)(2)
frcc_cpu_ck Typ Typ
Symbol Parameter Conditions TJ = TJ = TJ = TJ = Unit
(MHz) LDO(1) SMPS(1)
25 °C 85 °C 105 °C 130 °C
VOS1 160 68.0 32.0 73 96 114 152

Supply current in All peripherals 160 60.5 26.5 64 82 97 127

IDD VOS2 mA
Run mode enabled
88 41.0 18.0 45 62 77 107
VOS3 88 36.5 15.0 39 53 64 89

1. Guaranteed by characterization results, unless otherwise specified.

2. The maximum values are given for LDO regulator ON. Refer to Section 6.3.3 SMPS step-down converter for the SMPS maximum current
consumption.

Table 35. Typical consumption in Run mode and corresponding performance versus code position

Conditions frcc_cpu_c k Typ Typ LDO IDD/ SMPS IDD/

Symbol Parameter Coremark Unit Unit
Peripheral Code (MHz) LDO SMPS Coremark Coremark

ITCM 280 1414 69.5 33.8 49.2 23.9

FLASH 280 1414 69.0 33.4 48.8 23.6
AXI
All peripherals 280 1414 69.5 33.6 49.2 23.8
SRAM
disabled,
cache ON AHB
280 1414 70.0 33.7 49.5 23.8
SRAM
SRD
280 1414 70.0 33.7 49.5 23.8
Supply current SRAM µA/
IDD mA
in Run mode ITCM 280 1414 69.5 33.8 49.2 23.9 Coremark

FLASH 280 668 56.0 28.0 83.8 41.9

AXI
All peripherals 280 668 62.5 30.2 93.6 45.2
SRAM
disabled cache
OFF AHB
280 295 59.5 28.8 201.7 97.6
SRAM
SRD
280 295 59.0 28.5 200.0 96.6
SRAM

Table 36. Typical current consumption in Autonomous mode

Symbol Parameter Conditions(1) frcc_hclk4 (AHB4) (MHz) Typ Unit

Run, DStop mode VOS3 64 2.98

IDD Supply current in Autonomous mode mA
Run, DStop2 mode VOS3 64 2.64

1. System in Run mode, CPU domain is DStop or DStop2 mode with memories of the CPU domain shut-off enable or disable.

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Table 37. Typical current consumption in Sleep mode, regulator ON

Max(1)(2)
frcc_cpu_ck Typ Typ
Symbol Parameter Conditions TJ = TJ = TJ = TJ= Unit
(MHz) LDO SMPS
25 °C 85 °C 105 °C 130 °C

280 18.1 13.0 23 51 72 115

VOS0
225 15.0 10.6 20 47 68 112
225 13.7 9.3 18 40 57 93
Supply current in All peripherals VOS1
IDD(Sleep) 160 10.3 6.8 14 36 53 90 mA
Sleep mode disabled
160 9.3 5.8 12 30 44 74
VOS2
88 5.8 3.6 9 26 40 70
VOS3 88 5.2 3.0 8 21 32 57

1. Guaranteed by characterization results.

2. The maximum values are given for LDO regulator ON. Refer to Section 6.3.3 SMPS step-down converterfor the SMPS maximum current
consumption.

Table 38. Typical current consumption in System Stop mode

Max(1)(2)
Typ Typ
Symbol Parameter Conditions TJ = TJ = TJ = TJ= Unit
LDO SMPS
25 °C 85 °C 105 °C 130 °C

SVOS3
0.540 0.487 2.33 14.36 24.52 46.29
Main(3)
Flash memory in low- power SVOS3 LP 0.495 0.193 2.27 14.21 24.28 45.94
mode, memory shut-off disable
SVOS4 0.370 0.137 1.59 10.58 18.52 35.90
SVOS5 0.245 0.090 0.98 7.18 13.10 26.61
SVOS3
0.560 0.504 2.39 14.62 24.93 47.01
Main(3)
Flash memory in normal mode, SVOS3 LP 0.515 0.209 2.33 14.47 24.69 46.65
memory shut-off disable
SVOS4 0.390 0.153 1.65 10.84 18.93 36.62
SVOS5 0.245 0.090 1.04 7.43 13.51 27.32
Stop, DStop
SVOS3
0.530 0.481 2.31 14.23 24.27 45.71
Main(3)
Flash memory in low- power SVOS3 LP 0.480 0.186 2.25 14.09 24.04 45.36
IDD(Stop) mode, memory shut-off enable mA
SVOS4 0.360 0.134 1.57 10.49 18.32 35.41
SVOS5 0.230 0.085 0.96 6.95 12.59 25.26
SVOS3
0.550 0.498 2.37 14.50 24.68 46.43
Main(3)
Flash memory in normal mode, SVOS3 LP 0.500 0.204 2.31 14.35 24.45 46.07
memory shut-off enable
SVOS4 0.380 0.151 1.63 10.75 18.73 36.13
SVOS5 0.230 0.085 1.02 7.21 13.00 25.97
SVOS3
0.161 0.343 0.32 1.67 2.86 5.58
Main(3)
Flash memory in low- power SVOS3 LP 0.115 0.046 0.28 1.62 2.80 5.50
Stop, DStop2 mode, memory shut-off disable
SVOS4 0.095 0.037 0.20 1.23 2.19 4.43
SVOS5 0.090 0.032 0.14 0.93 1.75 3.80

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Operating conditions

Max(1)(2)
Typ Typ
Symbol Parameter Conditions TJ = TJ = TJ = TJ= Unit
LDO SMPS
25 °C 85 °C 105 °C 130 °C

SVOS3
0.146 0.337 0.30 1.55 2.63 5.04
Main(3)

IDD(Stop) Stop, DStop2 Flash memory in low -power SVOS3 LP 0.100 0.040 0.26 1.51 2.58 4.96 mA
mode, memory shut-off enable
SVOS4 0.085 0.033 0.19 1.15 2.01 3.98
SVOS5 0.075 0.028 0.12 0.80 1.46 3.02

1. Guaranteed by characterization results.

2. The maximum values are given for LDO regulator ON. Refer to Section 6.3.3 SMPS step-down converterfor the SMPS maximum current
consumption.
3. The SMPS is unnecessarily ON in System Stop mode, leading to an additional consumption. It is recommended to use SVOS3 LP mode to
optimize power consumption.

Table 39. Typical current consumption RAM shutoff in Stop mode

Typ LDO
Symbol Parameter Conditions Unit
SVOS3 LP SVOS4 SVOS5

AXISRAM1 shutoff power consumption (power consumption

3.00 1.80 3.00
reduction when AXISRAM1 shutoff is enabled)
AXISRAM2 shutoff power consumption (power consumption
4.40 2.70 4.40
reduction when AXISRAM2 shutoff is enabled)
AXISRAM13 shutoff power consumption (power consumption
4.40 2.70 4.40
reduction when AXISRAM3 shutoff is enabled)
AHBSRAM1 shutoff power consumption (power consumption
0.90 0.50 0.70
reduction when AHBSRAM1 shutoff is enabled)
AHBSRAM2 shutoff power consumption (power consumption
0.90 0.50 0.70
reduction when AHBSRAM2 shutoff is enabled)
∆IDD(Stop) Stop, Dstop or Dstop2 µA
ITCM and ETM shutoff power consumption (power consumption
1.00 0.60 0.90
reduction when ITCM and ETM shutoff is enabled)
GFXMMU and JPEG shutoff power consumption (power
consumption reduction when GFXMMU and JPEG shutoff is 0.20 0.10 0.10
enabled)
High-speed interface USB and FDCAN shutoff power consumption
(power consumption reduction when High-speed interface USB and 0.20 0.10 0.10
FDCAN shutoff is enabled)
SRDSRAM shutoff power consumption (power consumption
0.30 0.30 0.40
reduction when SRDSRAM shutoff is enabled)

Table 40. Typical and maximum current consumption in Standby mode

Conditions Typ Max (3.6V)(1)

Symbol Parameter Backup RTC & 1.62 2.4 3.3 TJ = TJ = TJ = TJ = Unit
3 V(3)
SRAM LSE(2) V V(3) V(3) 25 °C 85 °C 105 °C 130 °C

OFF OFF 1.97 2.76 3.02 3.30 4.0 11.0 22.0 57.0
Supply current in ON OFF 2.78 3.69 4.02 4.40 5.4 13.0 25.0 64.0
IDD
Standby mode, µA
(Standby) OFF ON 2.46 3.37 3.73 4.07 5.0 12.2 23.3 59.0
IWDG OFF
ON ON 3.27 4.30 4.73 5.17 6.4 14.2 26.3 66.0

1. Guaranteed by characterization results.

2. The LSE clock is in low-drive mode.

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3. These values are given for PDR ON. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced
(refer to Section 6.3.5 Embedded reset and power control block characteristics).

Table 41. Typical and maximum current consumption in VBAT mode

Conditions Typ Max (3.6V)(1)

Symbol Parameter Backup RTC & TJ = TJ = TJ = TJ= Unit
1.2 V 2V 3V 3.3 V
SRAM LSE(2) 25 °C 85 °C 105 °C 130 °C

OFF OFF 0.01 0.02 0.03 0.07 0.2 1.9 4.6 14

Supply current in ON OFF 0.85 0.93 1.05 1.14 1.5 3.6 7.5 20.0
IDD (VBAT) µA
VBAT mode OFF ON 0.50 0.63 0.74 0.84 1.2 3.1 5.9 16
ON ON 1.34 1.54 1.76 1.91 2.5 4.8 8.8 22.0

1. Guaranteed by characterization results.

2. The LSE clock is in low-drive mode.

I/O system current consumption

I/O static current consumption
All the I/Os used as inputs with pull-up generate a current consumption when the pin is externally held low. The
value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in
Table 63. I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to estimate the current
consumption.
An additional I/O current consumption is due to I/Os configured as inputs if an intermediate voltage level is
externally applied. This current consumption is caused by the input Schmitt trigger circuits used to discriminate
the input value. Unless this specific configuration is required by the application, this supply current consumption
can be avoided by configuring these I/Os in analog mode. This is notably the case of ADC input pins which should
be configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently, as a result of
external electromagnetic noise. To avoid a current consumption related to floating pins, they must either be
configured in analog mode, or forced internally to a definite digital value. This can be done either by using
pull-up/down resistors or by configuring the pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 42. Peripheral current consumption in Run
mode), the I/Os used by an application also contribute to the current consumption. When an I/O pin switches,
it uses the current from the MCU supply voltage to supply the I/O pin circuitry and to charge/discharge the
capacitive load (internal or external) connected to the pin:
ISW=VDDx × fsw × CL
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDx is the MCU supply voltage
fSW is the I/O switching frequency
CL is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed frequency.

On-chip peripheral current consumption

The MCU is placed under the following conditions:
• At startup, all I/O pins are in analog input configuration.
• All peripherals are disabled unless otherwise mentioned.
• The I/O compensation cell is enabled.
• frcc_cpu_ck is the CPU clock. fPCLK = frcc_cpu_ck/4, and fHCLK = frcc_cpu_ck/2.
The given value is calculated by measuring the difference of current consumption

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Operating conditions

• with all peripherals clocked off

• with only one peripheral clocked on
• frcc_cpu_ck = 280 MHz (Scale 0), frcc_cpu_ck = 225 MHz (Scale 1), frcc_cpu_ck = 160 MHz (Scale 2), frcc_cpu_ck
= 88 MHz (Scale 3)
• The ambient operating temperature is 25 °C and VDD=3.3 V.

Table 42. Peripheral current consumption in Run mode

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3

MDMA 7.10 6.40 5.90 5.40

DMA2D 3.00 2.80 2.50 2.30
JPGDEC 4.70 4.40 4.00 3.60
FLITF 20.00 19.00 17.00 15.00
FMC registers 1.30 1.30 1.20 1.10
FMC kernel 10.00 9.30 8.40 7.70
OSPI1 registers 0.50 0.60 0.50 0.50
OSPI1 kernel 2.30 2.20 2.00 1.80
SDMMC1 registers 8.90 8.30 7.60 6.90
SDMMC1 kernel 2.20 2.00 1.80 1.60
OSPI2 registers 0.70 0.70 0.70 0.60
AHB3 OSPI2 kernel 2.00 1.80 1.60 1.50
IOMNGR 0.30 0.30 0.30 0.30
OTFDEC1 1.20 1.20 1.10 1.10
OTFDEC2 1.40 1.30 1.20 1.20
GFXMMU 2.80 2.70 2.40 2.30
AXISRAM2 5.30 5.00 4.60 4.20
µA/MHz
AXISRAM3 5.40 5.10 4.60 4.30
DTCM1 1.10 1.10 1.00 1.00
DTCM2 0.70 0.80 0.70 0.70
ITCM 1.10 1.10 1.00 1.00
AXISRAM1 5.30 5.00 4.60 4.20
Bridge 0.10 0.10 0.10 0.10
DMA1 0.90 0.90 0.80 0.70
DMA2 0.90 0.80 0.80 0.70
CRC 0.60 0.60 0.50 0.50
ADC12 registers 5.40 4.90 4.50 4.10
AHB1 ADC12 kernel 1.10 1.00 0.90 0.80
USB1OTG registers 24.00 22.00 20.00 18.00
USB1OTG kernel 9.50 9.30 9.10 8.80
USB1ULPI 0.10 0.10 0.10 0.10
Bridge 0.10 0.10 0.10 0.10
CRYPT 1.50 1.40 1.30 1.20
AHB2
HASH 1.80 1.60 1.50 1.30

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IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3

DCMI 5.00 4.60 4.20 3.90

HSEM 0.10 0.10 0.10 0.10
RNG registers 1.50 1.40 1.20 1.10
RNG kernel 10.00 9.70 9.50 9.20
SDMMC2 registers 6.80 6.30 5.70 5.20
AHB2
SDMMC2 kernel 2.30 2.10 1.90 1.70
BDMA1 1.70 1.60 1.50 1.30
AHBSRAM1 0.70 0.70 0.60 0.60
AHBSRAM2 0.70 0.60 0.60 0.50
Bridge 9.10 8.40 7.70 7.00
GPIOA 2.00 1.80 1.70 1.50
GPIOB 1.80 1.70 1.50 1.40
GPIOC 2.00 1.80 1.70 1.50
GPIOD 2.00 1.80 1.70 1.50
GPIOE 1.90 1.80 1.60 1.50
GPIOF 1.90 1.80 1.60 1.50
GPIOG 2.00 1.80 1.70 1.50
GPIOH 1.90 1.80 1.60 1.50
AHB4
GPIOI 1.90 1.80 1.60 1.50
GPIOJ 1.90 1.80 1.60 1.50
µA/MHz
GPIOK 2.00 1.80 1.70 1.50
BDMA2 4.20 3.90 3.50 3.20
SRDSRAM 0.60 0.50 0.50 0.50
BKPRAM 0.80 0.70 0.70 0.60
IWDG 0.07 0.07 0.07 0.07
Bridge 0.10 0.10 0.10 0.10
LTDC 12.00 11.00 9.80 8.90
APB3 WWDG1 1.10 1.00 0.90 0.90
Bridge 0.10 0.10 0.10 0.10
TIM2 7.50 6.90 6.30 6.20
TIM3 6.30 5.90 5.40 4.90
TIM4 5.80 5.40 4.90 4.50
TIM5 7.20 6.70 6.10 5.60
TIM6 1.60 1.50 1.30 1.20

APB1 TIM7 1.60 1.40 1.30 1.20

TIM12 3.60 3.30 3.00 2.80
TIM13 2.80 2.60 2.40 2.10
TIM14 2.50 2.30 2.10 1.90
LPTIM1 registers 0.80 0.80 0.70 0.60
LPTIM1 kernel 2.20 2.00 1.80 1.70

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IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3

SPI2 registers 2.20 2.00 1.80 1.70

SPI2 kernel 0.90 0.80 0.80 0.70
SPI3 registers 2.70 2.40 2.30 2.00
SPI3 kernel 0.90 0.80 0.70 0.70
SPDIFRX1 registers 0.60 0.50 0.50 0.40
SPDIFRX1 kernel 2.90 2.70 2.50 2.20
USART2 registers 2.00 1.80 1.70 1.50
USART2 kernel 4.60 4.30 3.90 3.60
USART3 registers 2.00 1.80 1.70 1.50
USART3 kernel 4.50 4.20 3.80 3.40
UART4 registers 1.70 1.60 1.50 1.30
UART4 kernel 3.70 3.40 3.10 2.80
UART5 registers 1.80 1.70 1.50 1.40
UART5 kernel 3.80 3.50 3.20 2.90
I2C1 registers 0.90 0.80 0.80 0.70
I2C1 kernel 2.10 2.00 1.80 1.70
I2C2 registers 0.90 0.80 0.70 0.70
I2C2 kernel 2.10 1.90 1.80 1.60
APB1
I2C3 registers 0.90 0.80 0.70 0.70
I2C3 kernel 2.20 2.00 1.80 1.70
µA/MHz
HDMICEC registers 0.50 0.50 0.40 0.40
HDMICEC kernel 0.10 0.10 0.10 0.10
DAC1 1.40 1.30 1.20 1.10
UART7 registers 1.80 1.70 1.50 1.40
UART7 kernel 3.80 3.50 3.20 2.90
UART8 registers 2.10 2.00 1.80 1.70
UART8 kernel 3.80 3.50 3.20 2.90
Bridge 0.30 0.30 0.20 0.10
CRS 0.50 0.40 0.40 0.40
SWP registers 2.30 2.10 2.00 1.80
SWP kernel 0.10 0.10 0.10 0.10
OPAMP 4.20 3.80 3.50 3.20
MDIO 3.10 2.90 2.60 2.40
FDCAN registers 17.00 16.00 15.00 14.00
FDCAN kernel 5.60 4.80 3.50 1.10
Bridge 0.10 0.10 0.10 0.10
TIM1 9.80 9.10 8.30 7.60
TIM8 9.50 8.80 8.00 7.30
APB2
USART1 registers 0.10 0.10 0.10 0.10
USART1 kernel 0.10 0.10 0.10 0.10

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 STM32H7B0xB
Operating conditions

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3

USART6 registers 3.80 4.00 4.50 6.30

USART6 kernel 0.10 0.10 0.10 0.10
USART10 registers 4.00 4.10 4.60 6.40
USART10 kernel 0.10 0.10 0.10 0.10
UART9 registers 3.50 3.60 4.00 5.50
UART9 kernel 0.10 0.10 0.10 0.10
SPI1 registers 2.10 1.90 1.80 1.60
SPI1 kernel 0.90 0.80 0.70 0.70
SPI4 registers 2.10 1.90 1.70 1.50
SPI4 kernel 0.50 0.50 0.40 0.40
TIM15 5.30 4.90 4.40 4.00
APB2
TIM16 4.20 3.90 3.50 3.20
TIM17 4.30 4.00 3.60 3.30
SPI5 registers 2.00 1.90 1.70 1.50
SPI5 kernel 0.50 0.50 0.40 0.40
SAI1 registers 1.80 1.60 1.50 1.30
SAI1 kernel 1.40 1.30 1.20 1.00
SAI2 registers 2.30 2.10 1.90 1.70
SAI2 kernel 1.20 1.10 1.00 0.90
DFSDM1 registers 10.00 9.60 8.80 8.00
µA/MHz
DFSDM1 kernel 0.10 0.10 0.10 0.10
Bridge 0.50 0.40 0.40 0.30
SYSCFG 0.40 0.30 0.30 0.30
LPUART1 registers 1.10 1.00 0.90 0.80
LPUART1 kernel 2.30 2.10 1.90 1.70
SPI6 registers 1.70 1.50 1.40 1.30
SPI6 kernel 0.60 0.50 0.50 0.40
I2C4 registers 0.80 0.70 0.60 0.60
I2C4 kernel 1.90 1.70 1.60 1.40
LPTIM2 registers 0.60 0.60 0.50 0.50
LPTIM2 kernel 1.90 1.70 1.60 1.40
APB4
LPTIM3 registers 0.60 0.50 0.50 0.40
LPTIM3 kernel 1.50 1.40 1.30 1.20
DAC2 0.80 0.70 0.60 0.50
COMP12 0.40 0.30 0.30 0.30
VREF 0.30 0.30 0.20 0.20
RTCAPB 1.90 1.70 1.60 1.40
TMPSENS 2.30 2.10 2.00 1.80
DFSDM2 registers 1.70 1.50 1.40 1.30
DFSDM2 kernel 0.10 0.10 0.10 0.10

DS13196 - Rev 7 page 87/205

 STM32H7B0xB
Operating conditions

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
APB4 Bridge 0.10 0.10 0.10 0.10 µA/MHz

Table 43. Peripheral current consumption in Stop, Standby and VBAT mode

Typ Max (3.6 V)

Symbol Parameter Conditions Unit
3.3 V TJ = 25 °C TJ= 85 °C TJ = 105 °C TJ = 130 °C

RTC+LSE low drive - 0.77 1.0 1.2 1.3 2.0

RTC+LSE medium- low drive - 0.87 1.1 1.3 1.4 2.1
IDD RTC+LSE medium- high drive - 1.03 1.3 1.5 1.6 2.3 µA
RTC+LSE High drive - 1.38 1.6 1.8 1.9 2.6
Backup SRAM - 1.10 1.4 2.0 3.2 7.0

6.3.8 Wakeup time from low-power modes

The wakeup times given in Table 44. Low-power mode wakeup timings are measured starting from the wakeup
event trigger up to the first instruction executed by the CPU:
• For Stop or Sleep modes: the wakeup event is WFE.
• WKUP (PC1) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD=3.3 V.

Table 44. Low-power mode wakeup timings

Symbol Parameter Conditions Typ(1) Max(1)(2) Unit

CPU clock
tWUSLEEP(3) Wakeup from Sleep - 5.00 5.00
cycles
SVOS3 Main, HSI, flash memory in normal mode 4.2 6
SVOS3 Main, HSI, flash memory in low-power mode 8.3 11
SVOS3 LP, HSI, flash memory in normal mode 5.0 7
SVOS3 LP, HSI, flash memory in low-power mode 9.0 12
SVOS4, HSI, flash memory in normal mode 15.7 19
SVOS4, HSI, flash memory in low-power mode 19.7 25
SVOS5, HSI, flash memory in normal mode 35.0 43
SVOS5, HSI, flash memory in low-power mode 35.0 43
tWUDSTOP(3) Wakeup from DStop
SVOS3 Main, CSI, flash memory in normal mode 42.5 52
SVOS3 Main, CSI, flash memory in low power mode 48.0 58 µs
SVOS3 LP, CSI, flash memory in normal mode 43.3 53
SVOS3 LP, CSI, flash memory in low power mode 48.8 59
SVOS4, CSI, flash memory in normal mode 54.0 65
SVOS4, CSI, flash memory in low-power mode 59.5 72
SVOS5, CSI, flash memory in normal mode 74.8 90
SVOS5, CSI, flash memory in low-power mode 74.8 90
SVOS3 LP, HSI, flash memory in low-power mode 9.7 13
Wakeup from DStop2, clock kept SVOS4, HSI, flash memory in low-power mode 20.4 26
tWUDSTOP2(3)
running
SVOS5, HSI, flash memory in low-power mode 35.7 44

DS13196 - Rev 7 page 88/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Typ(1) Max(1)(2) Unit

SVOS3 LP, CSI, flash memory in low-power mode 51.3 62

Wakeup from DStop2, clock kept
tWUDSTOP2(3) SVOS4, CSI, flash memory in low-power mode 62.0 75
running
µs
SVOS5, CSI, flash memory in low-power mode 77.3 93

tWUSTDBY(3) Wakeup from Standby mode - 257 330

1. Guaranteed by characterization results.

2. Measures done at −40 °C in the worst conditions.
3. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.

6.3.9 External clock source characteristics

High-speed external user clock generated from an external source

In bypass mode, the HSE oscillator is switched off and the input pin is a standard I/O.
The external clock signal has to respect Table 45. High-speed external user clock characteristics in addition to
Table 63. I/O static characteristics. The external clock can be low-swing (analog) or digital. In case of a low-swing
analog input clock, the clock squarer must be activated (refer to RM0455).

Table 45. High-speed external user clock characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

User external clock source External digital/analog

fHSE_ext 4 25 50 MHz
frequency clock
Digital OSC_IN input high-
VHSEH 0.7 VDD - VDD
level voltage
External digital clock V
Digital OSC_IN input low-level
VHSEL VSS - 0.3 VDD
voltage
Digital OSC_IN input high or
tW(HSEH)/tW(HSEL)(2) External digital clock 7 - - ns
low time
VlswHSE Analog low-swing OSC_IN
0.2 - 2/3 VDD V
(VHSEH−VHSEL)(3) peak-to-peak amplitude External analog low-
swing clock
Analog low-swing OSC_IN
DuCyHSE 45 50 55 %
duty cycle
Analog low-swing OSC_IN rise External analog low-
tr(HSE)/tf(HSE) 0.05 / fHSE_ext - 0.3 / fHSE_ext ns
and fall times swing clock, 10% to 90%

1. Guaranteed by design.
2. The rise and fall times for a digital input signal are not specified. However the VHSEH and VHSEL conditions must be fulfilled.
3. The DC component of the signal must ensure that the signal peaks are located between VDD and VSS.

DS13196 - Rev 7 page 89/205

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Operating conditions

Figure 21. High-speed external clock source AC timing diagram

V HSEH
90 %
10 %
V HSEL
tr(HSE) tW(HSE) t
tf(HSE) tW(HSE)
T HSE

External fHSE_ext
IL
clock source OS C _IN
STM32

Low-speed external user clock generated from an external source

In bypass mode, the LSE oscillator is switched off and the input pin is a standard I/O. The external clock
signal has to respect Table 46. Low-speed external user clock characteristics in addition to Table 63. I/O static
characteristics. The external clock can be low-swing (analog) or digital. In case of a low-swing analog input clock,
the clock squarer must be activated (refer to RM0455).

Table 46. Low-speed external user clock characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

fLSE_ext User external clock source frequency External digital/analog clock - 32.768 1000 kHz

VLSEH Digital OSC32_IN input high-level voltage 0.7 VDD - VDD

External digital clock V
VLSEL OSC32_IN input low-level voltage VSS - 0.3 VDD

tw(LSEH)/ tw(LSEL) OSC32_IN high or low time External digital clock 250 - - ns

Vlsw_H Analog low-swing OSC_IN high-level voltage 0.6 - 1.225

Vlsw_L Analog low-swing OSC_IN low-level voltage 0.35 - 0.8

V
Analog low-swing OSC_IN peak-to-peak External analog low-swing clock
VlswLSE (VLSEH−VLSEL) 0.2 - 0.875
amplitude
DuCyLSE Analog low-swing OSC_IN duty cycle 45 50 55 %

External analog low-swing clock,

tr(LSE)/tf(LSE) Analog low-swing OSC_IN rise and fall times - 100 200 ns
10% to 90%

1. Guaranteed by design.

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST
microcontrollers” available from the ST website www.st.com.

DS13196 - Rev 7 page 90/205

 STM32H7B0xB
Operating conditions

Figure 22. Low-speed external clock source AC timing diagram

V LSEH
90 %
10 %
V LSEL
tr(LSE) tW(LSE) t
tf(LSE) tW(LSE)
T LSE

External fLSE_ext
OSC32 _IN IL
clock source
STM32

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 50 MHz crystal/ceramic resonator oscillator.
All the information given in this paragraph are based on characterization results obtained with typical external
components specified in Table 47. 4-50 MHz HSE oscillator characteristics. In the application, the resonator and
the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output
distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the
resonator characteristics (frequency, package, accuracy).

Table 47. 4-50 MHz HSE oscillator characteristics

Symbol Parameter Operating conditions(1) Min(2) Typ(2) Max(2) Unit

F Oscillator frequency - 4 - 50 MHz

RF Feedback resistor - - 200 - kΩ

During startup(3) - - 4

VDD=3 V, Rm=30 Ω
- 0.35 -
CL=10 pF at 4 MHz

VDD=3 V, Rm=30 Ω
- 0.40 -
CL=10 pF at 8 MHz

IDD(HSE) HSE current consumption VDD=3 V, Rm=30 Ω mA

- 0.45 -
CL=10 pF at 16 MHz

VDD=3 V, Rm=30 Ω
- 0.65 -
CL=10 pF at 32 MHz

VDD=3 V, Rm=30 Ω
- 0.95 -
CL=10 pF at 48 MHz

Gmcritmax Maximum critical crystal gm Startup - - 1.5 mA/V

tSU (4) VDD is stabilized

Start-up time - 2 - ms

1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.

2. Guaranteed by design.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time.

DS13196 - Rev 7 page 91/205

 STM32H7B0xB
Operating conditions

4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is reached. This value is
measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the 5 pF to 25 pF range
(typical), designed for high-frequency applications, and selected to match the requirements of the crystal or
resonator (see Figure 23. Typical application with an 8 MHz crystal). CL1 and CL2 are usually the same size. The
crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2. The
PCB and MCU pin capacitance must be included (10 pF can be used as a rough estimate of the combined pin
and board capacitance) when sizing CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST
microcontrollers” available from the ST website www.st.com.

Figure 23. Typical application with an 8 MHz crystal

Resonator with
integrated capacitors
C L1
OSC_ IN fH S E
Bias
8 MHz RF controlled
resonator
gain

R EXT (1) OSC_ OU T STM32

C L2

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator.
All the information given in this paragraph are based on characterization results obtained with typical external
components specified in Table 48. Low-speed external user clock characteristics. In the application, the resonator
and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output
distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the
resonator characteristics (frequency, package, accuracy).

Table 48. Low-speed external user clock characteristics

Symbol Parameter Operating conditions(1) Min(2) Typ(2) Max(2) Unit

F Oscillator frequency - - 32.768 - kHz

LSEDRV[1:0] = 00,
- 290 -
Low drive capability
LSEDRV[1:0] = 01,
- 390 -
Medium Low drive capability
IDD LSE current consumption nA
LSEDRV[1:0] = 10,
- 550 -
Medium high drive capability
LSEDRV[1:0] = 11,
- 900 -
High drive capability
LSEDRV[1:0] = 00,
- - 0.5
Low drive capability
Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 01, µA/V
- - 0.75
Medium Low drive capability
LSEDRV[1:0] = 10, - - 1.7

DS13196 - Rev 7 page 92/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Operating conditions(1) Min(2) Typ(2) Max(2) Unit

Medium high drive capability
Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 11, µA/V
- - 2.7
High drive capability

tSU (3)
Startup time VDD is stabilized - 2 - s

1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST
microcontrollers.
2. Guaranteed by design.
3. tSU is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768k Hz oscillation is reached. This value is
measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST
microcontrollers” available from the ST website www.st.com.

Figure 24. Typical application with a 32.768 kHz crystal

Resonator with
integrated capacitors CL1
OSC32_IN fHSE

Bias
32.768 kHz
RF controlled
resonator
gain

OSC32_OUT
STM32
CL2

1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

6.3.10 Internal clock source characteristics

The parameters given in Table 49. HSI48 oscillator characteristics to Table 52. LSI oscillator characteristics
are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in
Table 20. General operating conditions.

48 MHz high-speed internal RC oscillator (HSI48)

Table 49. HSI48 oscillator characteristics

Symbol Parameter Conditions Min Typ Max Unit

fHSI48 HSI48 frequency VDD = 3.3 V, TJ = 30 °C 47.5(1) 48 48.5(1) MHz

TRIM(2) User trimming step - - 0.175 0.250 %

USER TRIM COVERAGE(3) User trimming coverage ± 32 steps ±4,70 ±5.6 - %

DuCy(HSI48)(2) Duty cycle - 45 - 55 %

Accuracy of the HSI48 oscillator over temperature

ACCHSI48_REL(3) TJ = −40 to 130 °C −4.5 - 4 %
(reference is 30 °C)

HSI48 oscillator frequency drift with VDD (reference is VDD = 3 to 3.6 V - 0.025 0.05
ΔVDD(HSI48)(2) %
3.3 V) VDD = 1.62 to 3.6 V - 0.05 0.1

tsu(HSI48)(2) HSI48 oscillator startup time - - 2.1 4.0 µs

IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA

NT jitter(2) Next transition jitter accumulated jitter on 28 cycles - - ± 0.15 - ns

DS13196 - Rev 7 page 93/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min Typ Max Unit

PT jitter(2) Paired transition jitter Accumulated jitter on 56 cycles(6) - - ± 0.25 - ns

1. Calibrated during manufacturing tests.

2. Guaranteed by design.
3. Guaranteed by characterization results.
4. ΔfHSI = ACCHSI48_REL + ΔVDD
5. These values are obtained by using the formula: (Freq(3.6 V) − Freq(3.0 V)) / Freq(3.0 V) or (Freq(3.6 V) − Freq(1.62 V)) / Freq(1.62 V).
6. Jitter measurements are performed without clock sources activated in parallel.

64 MHz high-speed internal RC oscillator (HSI)

Table 50. HSI oscillator characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

fHSI HSI frequency VDD=3.3 V, TJ=30 °C 63.7(2) 64 64.3(2) MHz

Trimming is not a multiple of 32(3) - 0.24 0.32

Trimming is 128, 256 and 384(3) −5.2 −1.8 -

TRIM HSI user trimming step Trimming is 64, 192, 320 and 448(3) −1.4 −0.8 - %

Other trimming are a multiple of 32 (not

−0.6 −0.25 -
including multiple of 64 and 128)(3)
DuCy(HSI) Duty Cycle - 45 - 55 %
HSI oscillator frequency drift over VDD (reference
ΔVDD (HSI) VDD=1.62 to 3.6 V −0.12 - 0.03 %
is 3.3 V)
TJ=-20 to 105 °C −1(4) - 1(4)
HSI oscillator frequency drift over temperature
ΔTEMP (HSI) %
(reference is 64 MHz) TJ=−40 to TJmax °C −2(4) - 1(4)

tsu(HSI) HSI oscillator start-up time - - 1.4 2 µs

at 1 % of target frequency - 4 8
tstab(HSI) HSI oscillator stabilization time µs
at 5 % of target frequency - - 4
IDD(HSI) HSI oscillator power consumption - - 300 400 µA

1. Guaranteed by design, unless otherwise specified.

2. Calibrated during manufacturing tests.
3. Trimming value of HSICAL[8:0] (refer to RM0455).
4. Guaranteed by characterization results.

4 MHz low-power internal RC oscillator (CSI)

Table 51. CSI oscillator characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

fCSI CSI frequency VDD = 3.3 V, TJ = 30 °C 3.96(2) 4 4.04(2) MHz

Trimming is not a multiple of 16 - 0.40 0.75 -

Trimming is a multiple of 32 −4,75 −2,75 0.75 -
TRIM CSI user trimming step
Other trimming are a multiple of 16 (not
−0,43 0.00 0.75 %
including multiple of 32)
DuCy(CSI) Duty Cycle - 45 - 55 %
TJ = 0 to 85 °C −3.7(3) - 4,5(3)
∆TEMP (CSI) CSI oscillator frequency drift over temperature %
TJ = −40 to 130 °C −11(3) - 7,5(3)

DS13196 - Rev 7 page 94/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

∆VDD(CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V −0.06 - 0.06 %

tsu(CSI) CSI oscillator startup time - - 1 2 µs

CSI oscillator stabilization time (to reach ± 3 % of

tstab(CSI) - - - 4 cycle
fCSI)

IDD(CSI) CSI oscillator power consumption - - 23 30 µA

1. Guaranteed by design, unless otherwise specified.

2. Calibrated during manufacturing tests.
3. Guaranteed by characterization results.

Low-speed internal (LSI) RC oscillator

Table 52. LSI oscillator characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDD = 3.3 V, TJ = 25 °C 31,4(1) 32 32,6(1)

fLSI LSI frequency TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29,76(2) - 33,6(2) kHz

TJ = –40 to 130 °C, VDD = 1.62 to 3.6 V 29,4(2) - 33,6(2)

tsu(LSI)(3) LSI oscillator startup time - - 80 130

µs
LSI oscillator stabilization time (5% of final
tstab(LSI)(3) - - 120 170
value)

IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA

1. Calibrated during manufacturing tests.

2. Guaranteed by characterization results.
3. Guaranteed by design.

6.3.11 PLL characteristics

The parameters given in Table 53. PLL characteristics (wide VCO frequency range) are derived from tests
performed under temperature and VDD supply voltage conditions summarized in Table 20. General operating
conditions.

Table 53. PLL characteristics (wide VCO frequency range)

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

PLL input clock - 2 - 16 MHz

fPLL_IN
PLL input clock duty cycle - 10 - 90 %

VOS0 1 - 280(2)

VOS1 1 - 225(2)
fPLL_P_OUT PLL multiplier output clock P, Q, R
VOS2 1 - 160(2) MHz

VOS3 1 - 88(2)
fVCO_OUT PLL VCO output - 128 - 560(3)

Normal mode - 45 100(3)

tLOCK PLL lock time µs
Sigma-delta mode (fPLL_IN ≥ 8 MHz) - 60 120(3)

fVCO_OUT = 128 MHz - 60 -

Jitter Cycle-to-cycle jitter fVCO_OUT = 200 MHz - 50 - ±ps

fVCO_OUT = 400 MHz - 20 -

DS13196 - Rev 7 page 95/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

Cycle-to-cycle jitter fVCO_OUT = 560 MHz - 15 - ±ps

Normal mode (f PLL_IN = 2 MHz), fVCO_OUT = 560 MHz - ±0.2 -

Jitter Normal mode (f PLL_IN = 16 MHz), fVCO_OUT = 560 MHz - ±0.8 -
Long term jitter %
Sigma-delta mode (f PLL_IN = 2 MHz), fVCO_OUT = 560 MHz - ±0.2 -

Sigma-delta mode (f PLL_IN = 16 MHz), fVCO_OUT = 560 MHz - ±0.8 -

VDD - 330 420

fVCO_OUT = 560 MHz
VCORE - 630 -
IDD(PLL) PLL power consumption µA
VDD - 155 230
fVCO_OUT = 128 MHz
VCORE - 170 -

1. Guaranteed by design, unless otherwise specified.

2. This value must be limited to the maximum frequency due to the product limitation.
3. Guaranteed by characterization results.

Table 54. PLL characteristics (medium VCO frequency range)

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

PLL input clock - 1 - 2 MHz

fPLL_IN
PLL input clock duty cycle - 10 - 90 %
VOS0 1.17 - 210
VOS1 1.17 - 210
fPLL_OUT PLL multiplier output clock P, Q, R
VOS2 1.17 - 160(2) MHz
VOS3 1.17 - 88(2)
fVCO_OUT PLL VCO output - 150 - 420

Normal mode - 45 80(3)

tLOCK PLL lock time µs
Sigma-delta mode forbidden
fVCO_OUT = 150 MHz - - 60 -

fVCO_OUT = 200 MHz - - 40 -

Cycle-to-cycle jitter ±ps
fVCO_OUT = 400 MHz - - 18 -

Jitter fVCO_OUT = 420 MHz - - 15 -

fVCO_OUT = 150 MHz - 75 -

Period jitter fPLL_OUT = 50 MHz ±-ps
fVCO_OUT = 400 MHz - 25 -

Long term jitter Normal mode, fVCO_OUT = 400 MHz - ±0.2 - %

VDD - 275 360

fVCO_OUT = 420 MHz
VCORE - 450 -
IDD(PLL) PLL power consumption on VDD µA
VDD - 160 240
fVCO_OUT = 150 MHz
VCORE - 165 -

1. Guaranteed by design, unless otherwise specified.

2. This value must be limited to the maximum frequency due to the product limitation.
3. Guaranteed by characterization results.

DS13196 - Rev 7 page 96/205

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6.3.12 Memory characteristics

Flash memory
The characteristics are given at TJ = –40 to 130 °C unless otherwise specified.
The devices are shipped to customers with the flash memory erased.

Table 55. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max Unit

Word program - 2.5 4

IDD Supply current Sector erase - 1.8 3 mA
Mass erase - 2.0 3

Table 56. Flash memory programming

Symbol Parameter Conditions Min Typ Max(1) Unit

128 bits (user area) - - 20

tprog Word program time µs
16 bits (OTP area) - - 20
tERASE8KB Sector erase time (8 Kbytes) - - - 2.2
ms
tME Bank mass erase time - - 10

Vprog Programming voltage 1.62 - 3.6 V

1. Guaranteed by characterization results.

Table 57. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

NEND Endurance TJ = –40 to +130 °C 10 kcycles

Data retention 1 kcycle at TA = 85 °C 30

tRET Years
- 10 kcycles at TA = 55 °C 20

1. Guaranteed by characterization results.

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6.3.13 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed
by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional
disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF
capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 58. EMS characteristics. They are based on the EMS levels and classes
defined in application note AN1709.

Table 58. EMS characteristics

Level/
Symbol Parameter Conditions
Class

Voltage limits to be applied on any I/O pin to induce

VFESD 3B
a functional disturbance
VDD = 3.3 V, TA = +25 °C, LQFP144, frcc_cpu_ck =
Fast transient voltage burst limits to be applied 216 MHz, conforms to IEC 61000-4-2
VFTB through 100 pF on VDD and VSS pins to induce a 5A
functional disturbance

As a consequence, it is recommended to add a serial resistor (1 kΏ) located as close as possible to the MCU to
the pins exposed to noise (connected to tracks longer than 50 mm on PCB).

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical application environment
and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user
application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation
with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually
forcing a low state on the NRST pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of specification values.
When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring
(see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code,
is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the
pin loading.

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Operating conditions

Table 59. EMI characteristics for fHSE = 8 MHz and fHCLK = 64 MHz

Symbol Parameter Conditions Monitored frequency band Value Unit

0.1 to 30 MHz 7
30 to 130 MHz –1
Peak(1) dBµV
SEMI VDD = 3.6 V, TA = 25 °C, LQFP64 package, compliant with IEC 61967-2 130 MHz to 1 GHz 8
1 GHz to 2 GHz 7

Level(2) 0.1 GHz to 2 GHz 2.5 -

1. Refer to the EMI radiated test chapter of application note AN1709 "EMC design guide for STM8, STM32 and Legacy MCUs" available from
the ST website www.st.com..
2. Refer to the EMI level classification chapter of application note AN1709 "EMC design guide for STM8, STM32 and Legacy MCUs" available
from the ST website www.st.com.

6.3.14 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to
determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each sample according to
each pin combination. This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESDA/JEDEC JS-002
standards.

Table 60. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Packages Class Unit
value

Packages with
1C 1000(2)
Electrostatic discharge voltage TA = +25 °C conforming to ANSI/ESDA/ SMPS
VESD(HBM)
(human body model) JEDEC JS-001 Packages without
2 2000 V
SMPS

Electrostatic discharge voltage TA = +25 °C conforming to ANSI/ESDA/ All LQFP packages C1 250
VESD(CDM)
(charge device model) JEDEC JS-002 All BGA packages C2a 500

1. Guaranteed by characterization results.

2. The electrostatic discharge is 2000 V for all pins, except VFBSMPS, for which the test fails at 2000 V and passes at 1600 V.

Static latchup
Two complementary static tests are required on six parts to assess the latchup performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.

Table 61. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latchup class TJ= +130 °C, conforming to JESD78 II level A

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6.3.15 I/O current injection characteristics

As a general rule, a current injection to the I/O pins, due to external voltage below VSS or above VDD (for
standard, 3.3 V-capable I/O pins) should be avoided during the normal product operation. However, in order
to give an indication of the robustness of the microcontroller in cases when an abnormal injection accidentally
happens, susceptibility tests are performed on a sample basis during the device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins
programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked
for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE),
out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other
functional failure (for example reset, oscillator frequency deviation).
The following tables are the compilation of the SIC1/SIC2 and functional ESD results.
Negative induced A negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.

Table 62. I/O current injection susceptibility

Functional susceptibility
Symbol Description Unit
Negative injection Positive injection

PF2, PI12 0 NA
PG1, PE9, PB0, PA7, PC4, PC5, PE7, PE8, PA4, PA5, PA6, PF2, PI12, PC2_C,
IINJ 0 0 mA
PC3_C, PA0_C, PA1_C, BOOT0
All other I/Os 5 NA

6.3.16 I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 63. I/O static characteristics are derived from tests
performed under the conditions summarized in Table 20. General operating conditions. All I/Os are CMOS and
TTL compliant (except for BOOT0).
Note: For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO configuration for
hardware settings and low-power consumption” available from the ST website www.st.com.

Table 63. I/O static characteristics

Symbol Parameter Condition Min Typ Max Unit

I/O input low-level voltage except BOOT0 - - 0.3VDD (1)

VIL I/O input low-level voltage except BOOT0 1.62 V < VDDIOx < 3.6 V - - 0.4VDD−0.1(2) V

BOOT0 I/O input low level voltage - - 0.19VDD+0.1(2)

I/O input high level voltage except BOOT0 0.7VDD (1) - -

VIH I/O input high level voltage except BOOT0 1.62 V < VDDIOx < 3.6 V 0.47VDD+0.25(2) - - V

BOOT0 I/O input high level voltage 0.17VDD+0.6(2) - -

TT_xx, FT_xxx and NRST I/O input hysteresis - 250 -

VHYS(2) 1.62 V < VDDIOx < 3.6 V mV
BOOT0 I/O input hysteresis - 200 -

0 < VIN ≤ Max(VDDxxx)(5) - - ±250

FT_xx input leakage current(2)
Ilkg Max(VDDxxx) < VIN ≤ 5.5 V (3)(4)(5) - - 1500 nA

FT_u I/O 0 < VIN ≤ Max(VDDxxx )(5) - - ±350

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Symbol Parameter Condition Min Typ Max Unit

FT_u I/O Max(VDDxxx) < VIN ≤ 5.5 V (3)(4)(8)(5)
- - 5000(6)
nA
TT_xx input leakage current 0 < VIN ≤ Max(VDDxxx)(5) - - ±250
Ilkg
0 < VIN ≤ VDDIOx - - 15
VPP (BOOT0 alternate function) uA
VDDIOx < VIN ≤ 9 V - - 35

RPU Weak pull-up equivalent resistor(7) VIN = VSS 30 40 50

kΩ
RPD Weak pull-down equivalent resistor(7) VIN = VDD(5) 30 40 50

CIO I/O pin capacitance - - 5 - pF

1. Compliant with CMOS requirements.

2. Guaranteed by design.
3. All FT_xx IO except FT_lu and FT_u.
4. VIN must be less than Max(VDDxxx) + 3.6 V.
5. Max(VDDxxx) is the maximum value of all the I/O supplies.
6. To sustain a voltage higher than MIN(VDD, VDDA, VDD33USB) +0.3 V, the internal pull-up and pull-down resistors must be disabled.
7. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS
contribution to the series resistance is minimal (~10%).

All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than
the strict CMOS-technology or TTL parameters. The coverage of these requirements for FT I/Os is shown in
Figure 25. VIL/VIH for all I/Os except BOOT0.

Figure 25. VIL/VIH for all I/Os except BOOT0

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ±20 mA
(with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to respect the absolute
maximum rating specified in Section 6.2 Absolute maximum ratings. In particular:

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• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run consumption of the MCU
sourced on VDD, cannot exceed the absolute maximum rating ΣIVDD (see Table 18. Current characteristics).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run consumption of the MCU sunk
on VSS cannot exceed the absolute maximum rating ΣIVSS (see Table 18. Current characteristics).

Output voltage levels

Unless otherwise specified, the parameters given in Table 64. Output voltage characteristics for all I/Os except
PC13, PC14, PC15 and PI8 and Table 65. Output voltage characteristics for PC13, PC14, PC15 and PI8 are
derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in
Table 20. General operating conditions. All I/Os are CMOS and TTL compliant.

Table 64. Output voltage characteristics for all I/Os except PC13, PC14, PC15 and PI8
The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 17. Voltage
characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always respect the
absolute maximum ratings ΣIIO.
Symbol Parameter Conditions(1) Min Max Unit

CMOS port(2)
VOL Output low level voltage IIO=8 mA - 0.4
2.7 V≤ VDD ≤3.6 V

CMOS port(2)
VOH Output high level voltage IIO= −8 mA VDD−0.4 -
2.7 V≤ VDD ≤3.6 V

TTL port(2)
VOL (3)
Output low level voltage IIO=8 mA - 0.4
2.7 V≤ VDD ≤3.6 V

TTL port(2)
VOH(3) Output high level voltage IIO=-8 mA 2.4 -
2.7 V≤ VDD ≤3.6 V
V
(3)
IIO=20 mA
VOL Output low level voltage - 1.3
2.7 V≤ VDD ≤3.6 V

IIO=−20 mA
VOH(3) Output high level voltage VDD−1.3 -
2.7 V≤ VDD ≤3.6 V

IIO= 4 mA
VOL(3) Output low level voltage - 0.4
1.62 V≤ VDD ≤3.6 V

VOH (3) Output high level voltage IIO= −4 mA 1.62 V≤VDD<3.6 V VDD−0.4 -

IIO= 20 mA
- 0.4
2.3 V≤ VDD≤3.6 V
VOLFM+ (3)
Output low level voltage for an FTf I/O pin in FM+ mode
IIO= 10 mA
- 0.4
1.62 V≤ VDD ≤3.6 V

1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in
Table 17. Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins)
must always respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design.

Table 65. Output voltage characteristics for PC13, PC14, PC15 and PI8

Symbol Parameter Conditions(1) Min Max Unit

VOL Output low level voltage CMOS port(2) IIO=3 mA, 2.7 V≤ VDD ≤ 3.6 V - 0.4
V
VOH Output high level voltage CMOS port(2) IIO= −3 mA, 2.7 V≤ VDD ≤ 3.6 V VDD−0.4 -

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Operating conditions

Symbol Parameter Conditions(1) Min Max Unit

VOL (3) TTL port(2) IIO = 3 mA, 2.7 V≤ VDD ≤ 3.6 V

Output low level voltage - 0.4

VOH(3) Output high level voltage TTL port(2) IIO=−3 mA, 2.7 V ≤ VDD ≤ 3.6 V 2.4 -
V
VOL (3) IIO = 1.5 mA, 1.62 V ≤ VDD ≤ 3.6 V
Output low level voltage - 0.4

VOH (3) Output high level voltage IIO = −1.5 mA, 1.62 V ≤ VDD < 3.6 V VDD−0.4 -

1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in
Table 17. Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins)
must always respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design.

Output buffer timing characteristics (HSLV option disabled)

The HSLV bit of SYSCFG_CCCSR register can be used to optimize the I/O speed when the product voltage is
below 2.7 V.

Table 66. Output timing characteristics (HSLV OFF)

The frequency of the GPIOs that can be supplied in VBAT mode (PC13, PC14, PC15 and PI8) is limited to 2 MHz.
Speed Symbol Parameter conditions Min(1) Max(1) Unit

C=50 pF, 2.7 V≤ VDD≤3.6 V - 12

C=50 pF, 1.62 V≤VDD≤2.7 V - 3

C=30 pF, 2.7 V≤VDD≤3.6 V - 12

Fmax(2) Maximum frequency MHz
C=30 pF, 1.62 V≤VDD≤2.7 V - 3

C=10 pF, 2.7 V≤VDD≤3.6 V - 16

C=10 pF, 1.62 V≤VDD≤2.7 V - 4

00
C=50 pF, 2.7 V≤ VDD≤3.6 V - 16.6

C=50 pF, 1.62 V≤VDD≤2.7 V - 33.3

C=30 pF, 2.7 V≤VDD≤3.6 V - 13.3

Output high to low level fall time and output low to
tr/tf (3) ns
high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V - 25

C=10 pF, 2.7 V≤VDD≤3.6 V - 10

C=10 pF, 1.62 V≤VDD≤2.7 V - 20

C=50 pF, 2.7 V≤ VDD≤3.6 V - 60

C=50 pF, 1.62 V≤VDD≤2.7 V - 15

C=30 pF, 2.7 V≤VDD≤3.6 V - 80

Fmax(2) Maximum frequency MHz
C=30 pF, 1.62 V≤VDD≤2.7 V - 15

C=10 pF, 2.7 V≤VDD≤3.6 V - 110

C=10 pF, 1.62 V≤VDD≤2.7 V - 20

01
C=50 pF, 2.7 V≤ VDD≤3.6 V - 5.2

C=50 pF, 1.62 V≤VDD≤2.7 V - 10

C=30 pF, 2.7 V≤VDD≤3.6 V - 4.2

Output high to low level fall time and output low to
tr/tf (3) ns
high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V - 7.5

C=10 pF, 2.7 V≤VDD≤3.6 V - 2.8

C=10 pF, 1.62 V≤VDD≤2.7 V - 5.2

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Speed Symbol Parameter conditions Min(1) Max(1) Unit

C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 85

C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 35

C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 110

Fmax(2) Maximum frequency MHz
C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 40

C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 166

C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 100

10
C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 3.8

C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 6.9

C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 2.8

Output high to low level fall time and output low to
tr/tf (3) ns
high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 5.2

C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 1.8

C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 3.3

C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 100

C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 50

C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 133

Fmax(2) Maximum frequency MHz
C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 66

C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 220

C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 85

11
C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 3.3

C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 6.6

C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 2.4

Output high to low level fall time and output low to
tr/tf (3) ns
high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 4.5

C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 1.5

C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 2.7

1. Guaranteed by design.
2. The maximum frequency is defined with the following conditions: (tr+tf) ≤ 2/3 T, skew ≤ 1/20 T, 45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.

Output buffer timing characteristics (HSLV option enabled)

Table 67. Output timing characteristics (HSLV ON)

Speed Symbol Parameter conditions Min(1) Max(1) Unit

C=50 pF, 1.62 V≤VDD≤2.7 V - 10

Fmax(2) Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V - 10 MHz
C=10 pF, 1.62 V≤VDD≤2.7 V - 10
00
C=50 pF, 1.62 V≤VDD≤2.7 V - 11
Output high to low level fall time and output low to
tr/tf(3) C=30 pF, 1.62 V≤VDD≤2.7 V - 9 ns
high level rise time
C=10 pF, 1.62 V≤VDD≤2.7 V - 6.6

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Operating conditions

Speed Symbol Parameter conditions Min(1) Max(1) Unit

C=50 pF, 1.62 V≤VDD≤2.7 V - 50

Fmax (2)
Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V - 58 MHz
C=10 pF, 1.62 V≤VDD≤2.7 V - 66
01
C=50 pF, 1.62 V≤VDD≤2.7 V - 6.6
(3) Output high to low level fall time and output low to
tr/tf C=30 pF, 1.62 V≤VDD≤2.7 V - 4.8 ns
high level rise time
C=10 pF, 1.62 V≤VDD≤2.7 V - 3

C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 55

Fmax (2)
Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 80 MHz

C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 133

10
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 5.8
Output high to low level fall time and output low to
tr/tf(3) C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 4 ns
high level rise time
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 2.4

C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 60

Fmax (2)
Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 90 MHz

C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 175

11
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 5.3
Output high to low level fall time and output low to
tr/tf(3) C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 3.6 ns
high level rise time
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 1.9

1. Guaranteed by design.
2. The maximum frequency is defined with the following conditions: (tr+tf) ≤ 2/3 T, skew ≤ 1/20 T, 45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.

Analog switch between ports Pxy_C and Pxy

PA0_C, PA1_C, PC2_C and PC3_C can be connected internally to PA0, PA1, PC2 and PC3, respectively (refer to
SYSCFG_PMCR register in RM0468 reference manual). The switch is controlled by VDDSWITCH voltage level.
It is defined through BOOSTVDDSEL bit of SYSCFG_PMCR. If the switch is closed the switch characteristics are
given in the table below.

Table 68. Pxy_C and Pxy analog switch characteristics

Parameter Conditions Min Typ Max Unit

Switch control boosted - - 315

VDDSWITCH > 2.7 V - - 315

VDDSWITCH > 2.4 V - - 335

Switch impedance Ω
Switch control not boosted VDDSWITCH > 2.0 V - - 390

VDDSWITCH > 1.8 V - - 445

VDDSWITCH > 1.62 V - - 550

6.3.17 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, RPU (see
Table 63. I/O static characteristics).
Unless otherwise specified, the parameters given in Table 69. NRST pin characteristics are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized in Table 20. General
operating conditions.

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Table 69. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

RPU (1) VIN = VSS

Weak pull-up equivalent resistor(2) 30 40 50 ㏀

VF(NRST)(1) NRST Input filtered pulse 1.71 V < VDD < 3.6 V - - 50

1.71 V < VDD < 3.6 V 350 - - ns

VNF(NRST)(1) NRST Input not filtered pulse
1.62 V < VDD < 3.6 V 1000 - -

1. Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10%).

Figure 26. Recommended NRST pin protection

V DD
External
reset circuit (1)
R PU
NRST (2) Internal Reset
Filter

0.1 µF

STM32

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 63. I/O static characteristics. Otherwise the reset is not taken into account by the device.

6.3.18 FMC characteristics

Unless otherwise specified, the parameters given in the below tables for the FMC interface are derived from tests
performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in
Table 20. General operating conditions, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0.
Note: At VOS1, the performance in some FMC modes can be degraded by up to 5 % compared to VOS0. This is
indicated by a footnote when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics.

Asynchronous waveforms and timings

Figure 27 through Figure 29 represent asynchronous waveforms and Table 70 through Table 77 provide the
corresponding timings. The results shown in these tables are obtained with the following FMC configuration:
• AddressSetupTime = 0x1
• AddressHoldTime = 0x1
• DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5)
• BusTurnAroundDuration = 0x0

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• Capacitive load CL = 30 pF
In all timing tables, Tfmc_ker_ck is the kernel clock period.

Figure 27. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

tw(NE)

FMC_NE

tv(NOE_NE) t w(NOE) t h(NE_NOE)

FMC_NOE

FMC_NWE

tv(A_NE) t h(A_NOE)

FMC_A[25:0] Address
tv(BL_NE) t h(BL_NOE)

FMC_NBL[1:0]

t h(Data_NE)

tsu(Data_NOE) th(Data_NOE)

tsu(Data_NE)

FMC_D[15:0] Data

t v(NADV_NE)

tw(NADV)

FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

Table 70. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings

Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 3Tfmc_ker_ck − 1 3Tfmc_ker_ck +1

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 0.5

tw(NOE) FMC_NOE low time 2Tfmc_ker_ck − 1 2Tfmc_ker_ck + 1

th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 - ns

tv(A_NE) FMC_NEx low to FMC_A valid - 0.5

th(A_NOE) Address hold time after FMC_NOE high 0 -

tsu(Data_NE) Data to FMC_NEx high setup time 13 -

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Symbol Parameter Min(1) Max(1) Unit

tsu(Data_NOE) Data to FMC_NOEx high setup time 11 -

th(Data_NOE) Data hold time after FMC_NOE high 0 -

th(Data_NE) Data hold time after FMC_NEx high 0 - ns

tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0

tw(NADV) FMC_NADV low time - Tfmc_ker_ck + 1

1. Guaranteed by characterization results.

Table 71. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings

NWAIT pulse width is equal to 1 AHB cycle.
Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 7Tfmc_ker_ck +1 7Tfmc_ker_ck +1

tw(NOE) FMC_NWE low time 5Tfmc_ker_ck −1 5Tfmc_ker_ck +1

tw(NWAIT) FMC_NWAIT low time Tfmc_ker_ck −1 −0.5 - ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 4Tfmc_ker_ck +9 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 3Tfmc_ker_ck+12 -

1. Guaranteed by characterization results.

DS13196 - Rev 7 page 108/205

 STM32H7B0xB
Operating conditions

Figure 28. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

tw(NE)

FMC_NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_A[25:0] Address
tv(BL_NE) th(BL_NWE)

FMC_NBL[1:0] NBL
tv(Data_NE) th(Data_NWE)

FMC_D[15:0] Data
t v(NADV_NE)

tw(NADV)
FMC_NADV(1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

Table 72. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings

Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 3Tfmc_ker_ck − 1 3Tfmc_ker_ck + 1

tv(NWE_NE) FMC_NEx low to FMC_NWE low Tfmc_ker_ck − 1 Tfmc_ker_ck

tw(NWE) FMC_NWE low time Tfmc_ker_ck − 0.5 Tfmc_ker_ck + 0.5

th(NE_NWE) FMC_NWE high to FMC_NE high hold time Tfmc_ker_ck -

tv(A_NE) FMC_NEx low to FMC_A valid - 2

th(A_NWE) Address hold time after FMC_NWE high Tfmc_ker_ck + 0.5 -

ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 0.5

th(BL_NWE) FMC_BL hold time after FMC_NWE high Tfmc_ker_ck − 0.5 -

tv(Data_NE) Data to FMC_NEx low to Data valid - Tfmc_ker_ck + 3

th(Data_NWE) Data hold time after FMC_NWE high Tfmc_ker_ck+1 -

tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0

tw(NADV) FMC_NADV low time - Tfmc_ker_ck + 1

DS13196 - Rev 7 page 109/205

 STM32H7B0xB
Operating conditions

1. Guaranteed by characterization results.

Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings

NWAIT pulse width is equal to 1 AHB cycle.
Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 8Tfmc_ker_ck − 1 8Tfmc_ker_ck + 1

tw(NWE) FMC_NWE low time 6Tfmc_ker_ck − 1 6Tfmc_ker_ck + 1

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5Tfmc_ker_ck + 13 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4Tfmc_ker_ck+ 12 -

1. Guaranteed by characterization results.

Figure 29. Asynchronous multiplexed PSRAM/NOR read waveforms

tw(NE)

FMC_NE
tv(NOE_NE) t h(NE_NOE)

FMC_NOE

t w(NOE)

FMC_NWE

tv(A_NE) th(A_NOE)

FMC_A[25:16] Address
tv(BL_NE) th(BL_NOE)

FMC_NBL[1:0] NBL
th(Data_NE)
tsu(Data_NE)
t v(A_NE) tsu(Data_NOE) th(Data_NOE)

FMC_AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)
tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

Table 74. Asynchronous multiplexed PSRAM/NOR read timings

Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 4Tfmc_ker_ck − 1 4Tfmc_ker_ck + 1 ns

DS13196 - Rev 7 page 110/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Min(1) Max(1) Unit

tv(NOE_NE) FMC_NEx low to FMC_NOE low 2Tfmc_ker_ck 2Tfmc_ker_ck + 0.5

tw(NOE) FMC_NOE low time Tfmc_ker_ck − 1 Tfmc_ker_ck + 1

th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 -

tv(A_NE) FMC_NEx low to FMC_A valid - 0.5

tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 0.5

tw(NADV) FMC_NADV low time Tfmc_ker_ck − 0.5 Tfmc_ker_ck+1

ns
th(AD_NADV) FMC_AD(address) valid hold time after FMC_NADV high Tfmc_ker_ck + 0.5 -

th(A_NOE) Address hold time after FMC_NOE high Tfmc_ker_ck − 0.5 -

tsu(Data_NE) Data to FMC_NEx high setup time 13 -

tsu(Data_NOE) Data to FMC_NOE high setup time 11 -

th(Data_NE) Data hold time after FMC_NEx high 0 -

th(Data_NOE) Data hold time after FMC_NOE high 0 -

1. Guaranteed by characterization results.

Table 75. Asynchronous multiplexed PSRAM/NOR read - NWAIT timings

Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 8Tfmc_ker_ck − 1 8Tfmc_ker_ck + 1

tw(NOE) FMC_NWE low time 5Tfmc_ker_ck − 1 5Tfmc_ker_ck + 1

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 4Tfmc_ker_ck + 9 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4Tfmc_ker_ck + 12 -

1. Guaranteed by characterization results.

Table 76. Asynchronous multiplexed PSRAM/NOR write timings

Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 4Tfmc_ker_ck − 1 4Tfmc_ker_ck

tv(NWE_NE) FMC_NEx low to FMC_NWE low Tfmc_ker_c − 1 Tfmc_ker_ck + 0.5

tw(NWE) FMC_NWE low time 2Tfmc_ker_ck− 0.5 2Tfmc_ker_ck + 0.5

th(NE_NWE) FMC_NWE high to FMC_NE high hold time Tfmc_ker_ck − 0.5 -

tv(A_NE) FMC_NEx low to FMC_A valid - 0

tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 0.5

tw(NADV) FMC_NADV low time Tfmc_ker_ck Tfmc_ker_ck+ 1 ns

th(AD_NADV) FMC_AD(address) valid hold time after FMC_NADV high Tfmc_ker_ck + 0.5 -

th(A_NWE) Address hold time after FMC_NWE high Tfmc_ker_ck + 0.5 -

th(BL_NWE) FMC_BL hold time after FMC_NWE high Tfmc_ker_ck − 0.5 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 0.5

tv(Data_NADV) FMC_NADV high to Data valid - Tfmc_ker_ck + 2

th(Data_NWE) Data hold time after FMC_NWE high Tfmc_ker_ck+0.5 -

1. Guaranteed by characterization results.

DS13196 - Rev 7 page 111/205

 STM32H7B0xB
Operating conditions

Table 77. Asynchronous multiplexed PSRAM/NOR write - NWAIT timings

Symbol Parameter Min(1) Max(1) Unit

tw(NE) FMC_NE low time 9Tfmc_ker_ck − 1 9Tfmc_ker_ck

tw(NWE) FMC_NWE low time 7Tfmc_ker_ck − 0.5 7Tfmc_ker_ck + 0.5

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5Tfmc_ker_ck + 9 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4Tfmc_ker_ck + 12 -

1. Guaranteed by characterization results.

Synchronous waveforms and timings

Figure 30 through Figure 33 represent synchronous waveforms and Table 78 through Table 81 provide the
corresponding timings. The results shown in these tables are obtained with the following FMC configuration:
• BurstAccessMode = FMC_BurstAccessMode_Enable
• MemoryType = FMC_MemoryType_CRAM
• WriteBurst = FMC_WriteBurst_Enable
• CLKDivision = 1
• DataLatency = 1 for NOR flash; DataLatency = 0 for PSRAM
In all timing tables, Tfmc_ker_ck is the kernel clock period, with the following FMC_CLK maximum values:
• For 2.7 V < VDD < 3.6 V, FMC_CLK = 125 MHz at 20 pF
• For 1.8 V < VDD < 1.9 V, FMC_CLK = 100 MHz at 20 pF
• For 1.62 V < VDD<1.8 V, FMC_CLK = 100 MHz at 15 pF

DS13196 - Rev 7 page 112/205

 STM32H7B0xB
Operating conditions

Figure 30. Synchronous multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
t d(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
td(CLKL-ADIV) th(CLKH-ADV)
td(CLKL-ADV) tsu(ADV-CLKH) tsu(ADV-CLKH) th(CLKH-ADV)

FMC_AD[15:0] AD[15:0] D1 D2

FMC_NWAIT tsu(NWAITV-CLKH) th(CLKH-NWAITV)

(WAITCFG = 1b,
WAITPOL + 0b)

FMC_NWAIT tsu(NWAITV-CLKH) th(CLKH-NWAITV)

(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)

Table 78. Synchronous multiplexed NOR/PSRAM read timings

Symbol Parameter Min(1) Max(1)(2) Unit

tw(CLK) FMC_CLK period 2Tfmc_ker_ck –0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2

td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) Tfmc_ker_ck+1.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 1

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2.0

ns
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) Tfmc_ker_ck+1.5 -

td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 1.5

td(CLKH-NOEH) FMC_CLK high to FMC_NOE high Tfmc_ker_ck +1.5 -

td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

tsu(ADV-CLKH) FMC_A/D[15:0] valid data before FMC_CLK high 3 -

DS13196 - Rev 7 page 113/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Min(1) Max(1)(2) Unit

th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 0.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 3 - ns

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 1 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.

Figure 31. Synchronous multiplexed PSRAM write timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NWEL) td(CLKH-NWEH)

FMC_NWE
td(CLKL-ADIV) td(CLKL-Data)
td(CLKL-ADV) td(CLKL-Data)

FMC_AD[15:0] AD[15:0] D1 D2

FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)

td(CLKH-NBLH)

FMC_NBL

Table 79. Synchronous multiplexed PSRAM write timings

Symbol Parameter Min(1) Max(1)(2) Unit

tw(CLK) FMC_CLK period 2Tfmc_ker_ck –1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x =0..2) - 2

FMC_CLK high to FMC_NEx high ns

td(CLKH-NExH) Tfmc_ker_ck +1.5 -
(x = 0…2)
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 1.5

DS13196 - Rev 7 page 114/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Min(1) Max(1)(2) Unit

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

FMC_CLK low to FMC_Ax valid

td(CLKL-AV) - 2
(x =16…25)
FMC_CLK high to FMC_Ax invalid
td(CLKH-AIV) Tfmc_ker_ck +1.5 -
(x =16…25)
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 1.5

t(CLKH-NWEH) FMC_CLK high to FMC_NWE high Tfmc_ker_ck +1 -

ns
td(CLKL-ADV) FMC_CLK low to to FMC_AD[15:0] valid - 2.5

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3

td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 2

td(CLKH-NBLH) FMC_CLK high to FMC_NBL high Tfmc_ker_ck +0.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 2 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 2 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.

DS13196 - Rev 7 page 115/205

 STM32H7B0xB
Operating conditions

Figure 32. Synchronous non-multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK)

FMC_CLK
td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)

FMC_D[15:0] D1 D2

tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)

Table 80. Synchronous non-multiplexed NOR/PSRAM read timings

Symbol Parameter Min(1) Max(1)(2) Unit

tw(CLK) FMC_CLK period 2Tfmc_ker_ck –0.5 -

t(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2

FMC_CLK high to FMC_NEx high

td(CLKH-NExH) Tfmc_ker_ck+1.5 -
(x= 0…2)
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 1.5

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2 ns

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) Tfmc_ker_ck+1.5 -

td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 1.5

td(CLKH-NOEH) FMC_CLK high to FMC_NOE high Tfmc_ker_ck+1 -

tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 3 -

th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 0.5 -

t(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 3 -

DS13196 - Rev 7 page 116/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Min(1) Max(1)(2) Unit

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 1 - ns

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.

Figure 33. Synchronous non-multiplexed PSRAM write timings

tw(CLK) tw(CLK)

FMC_CLK

td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx

td(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV

td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE

td(CLKL-Data) td(CLKL-Data)

FMC_D[15:0] D1 D2

FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) td(CLKH-NBLH)
th(CLKH-NWAITV)
FMC_NBL

Table 81. Synchronous non-multiplexed PSRAM write timings

Symbol Parameter Min(1) Max(1)(2) Unit

t(CLK) FMC_CLK period 2Tfmc_ker_ck − 0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2

t(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) Tfmc_ker_ck + 1.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 1.5

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) Tfmc_ker_ck + 1.5 -

td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 1.5

td(CLKH-NWEH) FMC_CLK high to FMC_NWE high Tfmc_ker_ck + 1 -

DS13196 - Rev 7 page 117/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Min(1) Max(1)(2) Unit

td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 3

td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 2

td(CLKH-NBLH) FMC_CLK high to FMC_NBL high Tfmc_ker_ck + 0.5 - ns

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 2 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 2 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.

NAND controller waveforms and timings

Figure 34 through Figure 37 represent synchronous waveforms, and Table 82 and Table 83 provide the
corresponding timings. The results shown in this table are obtained with the following FMC configuration:
• COM.FMC_SetupTime = 0x01
• COM.FMC_WaitSetupTime = 0x03
• COM.FMC_HoldSetupTime = 0x02
• COM.FMC_HiZSetupTime = 0x01
• ATT.FMC_SetupTime = 0x01
• ATT.FMC_WaitSetupTime = 0x03
• ATT.FMC_HoldSetupTime = 0x02
• ATT.FMC_HiZSetupTime = 0x01
• Bank = FMC_Bank_NAND
• MemoryDataWidth = FMC_MemoryDataWidth_16b
• ECC = FMC_ECC_Enable
• ECCPageSize = FMC_ECCPageSize_512Bytes
• TCLRSetupTime = 0
• TARSetupTime = 0
• Capacitive load CL = 30 pF
In all timing tables, Tfmc_ker_ck is the kernel clock period.

Figure 34. NAND controller waveforms for read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)

FMC_NWE

td(ALE-NOE) th(NOE-ALE)

FMC_NOE (NRE)

tsu(D-NOE) th(NOE-D)
FMC_D[15:0]

DS13196 - Rev 7 page 118/205

 STM32H7B0xB
Operating conditions

Figure 35. NAND controller waveforms for write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NWE) th(NWE-ALE)

FMC_NWE

FMC_NOE (NRE)
tv(NWE-D) th(NWE-D)

FMC_D[15:0]

Figure 36. NAND controller waveforms for common memory read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) th(NOE-ALE)

FMC_NWE

tw(NOE)
FMC_NOE

tsu(D-NOE) th(NOE-D)

FMC_D[15:0]

DS13196 - Rev 7 page 119/205

 STM32H7B0xB
Operating conditions

Figure 37. NAND controller waveforms for common memory write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) tw(NWE) th(NOE-ALE)

FMC_NWE

FMC_NOE

td(D-NWE)

tv(NWE-D) th(NWE-D)

FMC_D[15:0]

Table 82. Switching characteristics for NAND flash memory read cycles

Symbol Parameter Min(1) Max(1) Unit

tw(N0E) FMC_NOE low width 4Tfmc_ker_ck – 0.5 4Tfmc_ker_ck+0.5

tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 8 -

th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - ns

td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3Tfmc_ker_ck +0.5

th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 4Tfmc_ker_ck –1 -

1. Guaranteed by characterization results.

Table 83. Switching characteristics for NAND flash write cycles

Symbol Parameter Min(1) Max(1) Unit

tw(NWE) FMC_NWE low width 4Tfmc_ker_ck – 0.5 4Tfmc_ker_ck +0.5

tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 -

th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 2Tfmc_ker_ck + 1.5 -

ns
td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5Tfmc_ker_ck – 2 -

td(ALE-NWE) FMC_ALE valid before FMC_NWE low - 3Tfmc_ker_ck +0.5

th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 2Tfmc_ker_ck + 0.5 -

1. Guaranteed by characterization results.

SDRAM waveforms and timings

In all timing tables, Tfmc_ker_ck is the kernel clock period, with the following FMC_SDCLK maximum values:
• For 2.7 V < VDD <3.6 V: FMC_CLK =110 MHz at 20 pF
• For 1.8 V < VDD <1.9 V: FMC_CLK =100 MHz at 20 pF
• For 1.62 V <DD <1.8 V, FMC_CLK =100 MHz at 15 pF

DS13196 - Rev 7 page 120/205

 STM32H7B0xB
Operating conditions

Figure 38. SDRAM read access waveforms (CL = 1)

FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)

FMC_A[12:0] Row n Col1 Col2 Coli Coln

th(SDCLKL_AddC)

td(SDCLKL_SNDE) th(SDCLKL_SNDE)

FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)

FMC_SDNRAS

td(SDCLKL_NCAS) th(SDCLKL_NCAS)

FMC_SDNCAS

FMC_SDNWE
tsu(SDCLKH_Data) th(SDCLKH_Data)

FMC_D[31:0] Data1 Data2 Datai Datan

Table 84. SDRAM read timings

Symbol Parameter Min(1) Max(1)(2) Unit

tw(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 1 2Tfmc_ker_ck +0.5

tsu(SDCLKH _Data) Data input setup time 3 -

th(SDCLKH_Data) Data input hold time 0 -

td(SDCLKL_Add) Address valid time - 1.5

td(SDCLKL- SDNE) Chip select valid time - 2(3)

ns
th(SDCLKL_SDNE) Chip select hold time 0.5 -

td(SDCLKL_SDNRAS) SDNRAS valid time - 2

th(SDCLKL_SDNRAS) SDNRAS hold time 0.5 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5

th(SDCLKL_SDNCAS) SDNCAS hold time 0 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. Using PC2_C I/O adds 4.5 ns to this timing.

DS13196 - Rev 7 page 121/205

 STM32H7B0xB
Operating conditions

Table 85. LPSDR SDRAM read timings

Symbol Parameter Min(1) Max(1)(2) Unit

tW(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 1 2Tfmc_ker_ck+0.5

tsu(SDCLKH_Data) Data input setup time 3 -

th(SDCLKH_Data) Data input hold time 0.5 -

td(SDCLKL_Add) Address valid time - 3.5

td(SDCLKL_SDNE) Chip select valid time - 2.5(3)

ns
th(SDCLKL_SDNE) Chip select hold time 0 -

td(SDCLKL_SDNRAS SDNRAS valid time - 1

th(SDCLKL_SDNRAS) SDNRAS hold time 0 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 1.5

th(SDCLKL_SDNCAS) SDNCAS hold time 0 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. Using PC2_C I/O adds 16.5 ns to this timing.

Figure 39. SDRAM write access waveforms

FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)

FMC_A[12:0] Row n Col1 Col2 Coli Coln

th(SDCLKL_AddC)

td(SDCLKL_SNDE) th(SDCLKL_SNDE)

FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)

FMC_SDNRAS

td(SDCLKL_NCAS) th(SDCLKL_NCAS)

FMC_SDNCAS
td(SDCLKL_NWE) th(SDCLKL_NWE)

FMC_SDNWE
td(SDCLKL_Data)

FMC_D[31:0] Data1 Data2 Datai Datan

td(SDCLKL_NBL) th(SDCLKL_Data)

FMC_NBL[3:0]

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 STM32H7B0xB
Operating conditions

Table 86. SDRAM write timings

Symbol Parameter Min(1) Max(1)(2) Unit

tw(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 1 2Tfmc_ker_ck+0.5

td(SDCLKL _Data) Data output valid time - 2.5

th(SDCLKL _Data) Data output hold time 0 -

td(SDCLKL_Add) Address valid time - 2

td(SDCLKL_SDNWE) SDNWE valid time - 2.5

th(SDCLKL_SDNWE) SDNWE hold time 0.5 -

ns
td(SDCLKL_ SDNE) Chip select valid time - 2(3)

th(SDCLKL-_SDNE) Chip select hold time 0.5 -

td(SDCLKL_SDNRAS) SDNRAS valid time - 1.5

th(SDCLKL_SDNRAS) SDNRAS hold time 0.5 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 1.5

td(SDCLKL_SDNCAS) SDNCAS hold time 0.5 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. Using PC2_C I/O adds 4.5 ns to this timing.

Table 87. LPSDR SDRAM write timings

Symbol Parameter Min(1) Max(1)(2) Unit

tw(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 1 2Tfmc_ker_ck+0.5

td(SDCLKL _Data) Data output valid time - 2.5

th(SDCLKL _Data) Data output hold time 0 -

td(SDCLKL_Add) Address valid time - 2.5

td(SDCLKL-SDNWE) SDNWE valid time - 3

th(SDCLKL-SDNWE) SDNWE hold time 0 -

ns
td(SDCLKL- SDNE) Chip select valid time - 3(3)

th(SDCLKL- SDNE) Chip select hold time 0 -

td(SDCLKL-SDNRAS) SDNRAS valid time - 2

th(SDCLKL-SDNRAS) SDNRAS hold time 0 -

td(SDCLKL-SDNCAS) SDNCAS valid time - 2

td(SDCLKL-SDNCAS) SDNCAS hold time 0 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. Using PC2_C I/O adds 16.5 ns to this timing.

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 STM32H7B0xB
Operating conditions

6.3.19 Octo-SPI interface characteristics

Unless otherwise specified, the parameters given in Table 88. OCTOSPI characteristics in SDR mode and
Table 89. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus for the OCTOSPI interface
are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage
summarized in Table 20. General operating conditions, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Measurement points are done at CMOS levels: 0.5VDD
• I/O compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics.

Table 88. OCTOSPI characteristics in SDR mode

Delay block bypassed.
Symbol Parameter Conditions Min(1)(2) Typ(1)(2) Max(1)(2)(3) Unit

1.62 V < VDD < 3.6 V, VOS0,

- - 90
CLOAD = 15 pF

OCTOSPI clock 1.62 V < VDD < 3.6 V, VOS0,

F(CLK) - - 80 MHz
frequency CLOAD = 20 pF

2.7 V < VDD < 3.6 V, VOS0,

- - 140
CLOAD = 20 pF

tw(CLKH) t(CLK)/2 - t(CLK)/2+1

OCTOSPI clock high
PRESCALER[7:0] = n = 0,1,3,5
tw(CLKL) and low time t(CLK)/2−1 - t(CLK)/2

(n/2)*t(CLK)/ (n/2)*t(CLK)/
tw(CLKH) -
OCTOSPI clock high (n+1) (n+1)+1
PRESCALER[7:0] = n = 2,4,6,8
and low time (n/2+1)*t(CLK)/ (n/2+1)*t(CLK)/
tw(CLKL) -
(n+1) −1 (n+1)
2.7 V < VDD < 3.6 V 2 - - ns
ts(IN)(4) Data input setup time
1.62 V < VDD < 3.6 V 2 - -

2.7 V < VDD < 3.6 V 4.5 - -

th(IN)(4) Data input hold time
1.62 V < VDD < 3.6 V 5 - -

tv(OUT) Data output valid time - - 1 1.5(4)

th(OUT) Data output hold time - 0 - -

1. All values apply to Octal and Quad-SPI mode.

2. Guaranteed by characterization results.
3. At VOS1, these values are degraded by up to 5 %.
4. Using PC2, PC3, PI11, PF0 or PF1 I/O in the data bus adds 3.5 ns to this timing value.

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 STM32H7B0xB
Operating conditions

Figure 40. OctoSPI timing diagram - SDR mode

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)

Clock
tv(OUT) th(OUT)

Data output D0 D1 D2

ts(IN) th(IN)

Data input D0 D1 D2

Table 89. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus

Symbol Parameter Conditions Min(1) Typ(1) Max(1)(2) Unit

1.71 V < VDD < 3.6 V, VOS0,

- - 120(5)
CLOAD = 15 pF

OCTOSPI clock 2.7 V < VDD < 3.6 V, VOS0,

F(CLK)(3)(4) - - 100 MHz
frequency CLOAD = 20 pF

1.62 V < VDD < 2.5 V, VOS0,

- - 100/45(6)
CLOAD = 20 pF

tw(CLKH) t(CLK)/2 - t(CLK)/2+1

OCTOSPI clock high
PRESCALER[7:0] = n = 0,1,3,5
tw(CLKL) and low time t(CLK)/2−1 - t(CLK)/2

(n/2)*t(CLK)/ (n/2)*t(CLK)/
tw(CLKH) -
OCTOSPI clock high (n+1) (n+1)+1
PRESCALER[7:0] = n = 2,4,6,8
and low time (n/2+1)*t(CLK)/ (n/2+1)*t(CLK)/
tw(CLKL) -
(n+1)−1 (n+1)
tv(CLK) Clock valid time - - - t(CLK)+1

t(CLK)/2−0.5
th(CLK) Clock hold time - - -
t(CLK)/2

tw(CS) Chip select high time - 3 x t(CLK) - -

tv(DQ) Data input vallid time - 0 - -

Data strobe input

tv(DS) - 0 - -
valid time
ns
Data strobe input hold
th(DS) - 0 - -
time
Data strobe output
tv(RWDS) - - - 3 x t(CLK)
valid time
tsr(DQ)
Data input setup time - −1 - -
tsf(DQ)(7)

thr(DQ) Rising edge 3 - -

Data input hold time
thf(DQ)(7) Falling edge 3.5 - -

DHQC = 0 - 5.5 7(8)

tvr(OUT)
Data output valid time t(CLK)/4+
tvf(OUT) DHQC = 1, PRESCALER[7:0]=1,2... - t(CLK)/4+2(8)
1
thr(OUT)
Data output hold time DHQC = 0 4.5 - -
thf(OUT)

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1)(2) Unit

thr(OUT)
Data output hold time DHQC = 1, PRESCALER[7:0]=1,2... t(CLK)/4 - - ns
thf(OUT)

1. Guaranteed by characterization results, unless otherwise specified.

2. At VOS1, these values are degraded by up to 5 %.
3. The maximum frequency values are given for a maximum RWDS to DQ skew ≤ ±1.0 ns.
4. DHQC must be set to reach the mentioned frequency.
5. Guaranteed by design.
6. Using PC2, PC3, PI11, PF0 or PF1 I/Os limits the maximum clock frequency.
7. Delay block bypassed.
8. Using PC2, PC3, PI11, PF0 or PF1 I/O in the data bus adds 3.5 ns to this timing value.

Figure 41. OctoSPI timing diagram - DTR mode

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)

Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)

Data output D0 D1 D2 D3 D4 D5

tsf(IN) thf(IN) tsr(IN) thr(IN)

Data input D0 D1 D2 D3 D4 D5

Figure 42. OctoSPI Hyperbus clock

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)

tf(NCLK) t(NCLK) tw(NCLKL) tw(NCLKH) tr(NCLK)

NCLK

VOD(CLK)
CLK

Figure 43. OctoSPI Hyperbus read

tw(CS)

NCS

tv(CLK) t ACC= Initial access th(CLK)

CLK, NCLK

tv(RWDS) tv(DS) th(DS)

RWDS

tv(OUT) th(OUT) Latency count tv(DQ) ts(DQ) th(DQ)

15:8 Dn Dn Dn+1 Dn+1

DQ[7:0] 47:40 39:32 31:24 23:16 7:0
A B A B

Command address
Memory drives DQ[7:0] and RWDS.
Host drives DQ[7:0] and the memory drives RWDS.

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 STM32H7B0xB
Operating conditions

Figure 44. OctoSPI Hyperbus write

tw(CS)

NCS

Read write recovery Access latency

tv(CLK) th(CLK)

CLK, NCLK

tv(RWDS) High = 2x latency count tv(OUT) th(OUT)

Low = 1x latency count
RWDS

Latency count
tv(OUT) th(OUT) tv(OUT) th(OUT)

Dn Dn Dn+1 Dn+1
DQ[7:0] 47:40 39:32 31:24 23:16 15:8 7:0
A B A B

Command address Host drives DQ[7:0] and RWDS.

Host drives DQ[7:0] and the memory drives RWDS.

6.3.20 Delay block (DLYB) characteristics

Unless otherwise specified, the parameters given in Table 90. Delay Block characteristics for Delay Block are
derived from tests performed under the ambient temperature, frcc_cpu_ck frequency and VDD supply voltage
summarized in Table 20. General operating conditions, with the following configuration:

Table 90. Delay Block characteristics

Symbol Parameter Conditions Min Typ Max Unit

tinit Initial delay - 1400 1700 2700

ps
t∆ Unit Delay - 40 47 59

6.3.21 16-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 91. ADC characteristics are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage conditions summarized
in Table 20. General operating conditions.

Table 91. ADC characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

Analog power supply

VDDA - 1.62 - 3.6
for ADC ON
VDDA ≥ 2 V 1.62 - VDDA
Positive reference
VREF+(2) V
voltage VDDA < 2 V VDDA

Negative reference
VREF-(2) - VSSA
voltage
BOOST =
0.12 - 50
11
BOOST =
0.12 - 25
10
fADC ADC clock frequency 1,62 V ≤VDDA ≤ 3.6 V MHz
BOOST =
0.12 - 12.5
01
BOOST =
- - 6.25
00

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

Resolution = 16
bits, fADC = 36 MHz SMP = 1.5 - - 3.60
VDDA > 2.5 V TJ =
90 °C
Resolution = 16
fADC = 37 MHz SMP = 2.5 - - 3.35
bits
Resolution = 14
Sampling rate for fADC = 50 MHz SMP = 2.5 - - 5.00
bits
Direct channels
Resolution = 12
fADC=50 MHz SMP = 2.5 - - 5.50
bits TJ =
Resolution = 10 125 °C
fADC=50 MHz SMP=1.5 - - 7.10
bits
Resolution = 8
fADC=50 MHz SMP=1.5 - - 8.30
bits
Resolution = 16
fADC=32 MHz SMP=2.5 - - 2.90
bits, VDDA>2.5V
TJ = 90 °C
Resolution = 16
fADC=31 MHz SMP=2.5 - - 2.80
bits
fS(3) Resolution = 14 MSPS
fADC=33 MHz SMP=2.5 - - 3.30
Sampling rate for Fast bits
channels Resolution = 12
fADC=39 MHz SMP=2.5 - - 4.30
bits TJ =
Resolution = 10 125°C
fADC=48 MHz SMP=2.5 - - 6.00
bits
Resolution = 8
fADC=50 MHz SMP=2.5 - - 7.10
bits
Resolution = 16
TJ = 90 °C - -
bits
Resolution = 14
- -
bits
Sampling rate for
Slow channels, Resolution = 12
fADC=10 MHz SMP=1.5 - - 1.00
BOOST = 00, fADC = bits TJ =
10 MHz 125 °C
Resolution = 10
- -
bits
Resolution = 8
- -
bits
tTRIG External trigger period Resolution = 16 bits - - 10 1/fADC

Conversion voltage
VAIN(4) - 0 - VREF+ V
range

Common mode input VREF/2 VREF/ VREF/2

VCMIV - V
voltage − 10% 2 + 10%
Resolution = 16 bits, TJ = 125 °C - - 170

Resolution = 14 bits, TJ= 125 °C - - 435

(5) External input
RAIN Resolution = 12 bits, TJJ = 125 °C - - 1150 Ω
impedance
Resolution = 10 bits, TJ = 125 °C - - 5650

Resolution = 8 bits, TJ = 125 °C - - 26500

Internal sample and

CADC - - 4 - pF
hold capacitor
tADCVREG_
ADC LDO startup time - - 5 10 µs
STUP

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Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

conversion
tSTAB ADC power-up time LDO already started 1 - -
cycle
Offset and linearity
tCAL - 165010
calibration time
tOFF_CAL Offset calibration time - 1280

CKMODE = 00 1.5 2 2.5

Trigger conversion
latency for regular CKMODE = 01 - - 2.5
tLATR and injected channels
without aborting the CKMODE = 10 - - 2.5
conversion
CKMODE = 11 - - 2.25
CKMODE = 00 2.5 3 3.5 1/fADC
Trigger conversion
latency for regular CKMODE = 01 - - 3.5
tLATRINJ and injected channels
when a regular CKMODE = 10 - - 3.5
conversion is aborted
CKMODE = 11 - - 3.25
tS Sampling time - 1.5 - 810.5

Total conversion time tS +

tCONV (including sampling N-bits resolution 0.5 + - -
time) N/2
Resolution = 16 bits, fADC=25 MHz - 1440 -
ADC consumption on
VDDA, BOOST=11, Resolution = 14 bits, fADC=30 MHz - 1350 -
Differential mode
Resolution = 12 bits, fADC=40 MHz - 990 -

ADC consumption on Resolution = 16 bits - 1080 -

VDDA, BOOST=10,
Resolution = 14 bits - 810 -
Differential mode
fADC=25 MHz Resolution = 12 bits - 585 -
IDDA_D(ADC) µA
ADC consumption on Resolution = 16 bits - 630 -
VDDA, BOOST=01,
Resolution = 14 bits - 432 -
Differential mode
fADC=12.5 MHz Resolution = 12 bits - 315 -

ADC consumption on Resolution = 16 bits - 360 -

VDDA, BOOST=00,
Resolution = 14 bits - 270 -
Differential mode
fADC=6.25 MHz Resolution = 12 bits - 225 -
Resolution = 16 bits, fADC=25 MHz - 720 -
ADC consumption on
VDDA, BOOST=11, Resolution = 14 bits, fADC=30 MHz - 675 -
Single-ended mode
Resolution = 12 bits, fADC=40 MHz - 495 -

ADC consumption on Resolution = 16 bits - 540 -

VDDA, BOOST=10,
Resolution = 14 bits - 405 -
Single-ended mode
fADC=25 MHz Resolution = 12 bits - 292.5 -
IDDA_SE(ADC)
ADC consumption on Resolution = 16 bits - 315 - µA
VDDA, BOOST=01,
Resolution = 14 bits - 216 -
Single-ended mode
fADC=12.5 MHz Resolution = 12 bits - 157.5 -

ADC consumption on Resolution = 16 bits - 180 -

VDDA, BOOST=00,
Resolution = 14 bits - 135 -
Single-ended mode
fADC=6.25 MHz Resolution = 12 bits - 112.5 -
ADC consumption on fADC=50 MHz
IDD(ADC) - 400 -
VDD

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

fADC=25 MHz - 220 -

ADC consumption on fADC=12.5 MHz - 180 -

IDD(ADC) µA
VDD
fADC=6.25 MHz - 120 -

fADC=3.125 MHz - 80 -

1. Guaranteed by design.
2. Depending on the package, VREF+ can be internally connected to VDDA and VREF- to VSSA.
3. These values are valid UFBGA176+25 and one ADC. The values for other packages and multiple ADCs might be different
4. The voltage booster on ADC switches must be used for VDDA < 2.4 V (embedded I/O switches).
5. The tolerance is 10 LSBs for 16-bit resolution, 4 LSBs for 14-bit resolution, and 2 LSBs for 12-bit, 10-bit and 8-bit resolutions.

Table 92. Minimum sampling time vs RAIN

Data valid up to 130 °C, with a 47 pF PCB capacitor and VDDA=1.6 V.
Minimum sampling time (s)
Resolution RAIN (Ω)
Direct channels(1)(2) Fast channels(1)(3) Slow channels(1)(4)

16 bits 47 7.37E-08 1.14E-07 1.72E-07

47 6.29E-08 9.74E-08 1.55E-07
68 6.84E-08 1.02E-07 1.58E-07
14 bits 100 7.80E-08 1.12E-07 1.62E-07
150 9.86E-08 1.32E-07 1.80E-07
220 1.32E-07 1.61E-07 2.01E-07
47 5.32E-08 8.00E-08 1.29E-07
68 5.74E-08 8.50E-08 1.32E-07
100 6.58E-08 9.31E-08 1.40E-07
150 8.37E-08 1.10E-07 1.51E-07
12 bits
220 1.11E-07 1.34E-07 1.73E-07
330 1.56E-07 1.78E-07 2.14E-07
470 2.16E-07 2.39E-07 2.68E-07
680 3.01E-07 3.29E-07 3.54E-07
47 4.34E-08 6.51E-08 1.08E-07
68 4.68E-08 6.89E-08 1.11E-07
100 5.35E-08 7.55E-08 1.16E-07
150 6.68E-08 8.77E-08 1.26E-07
220 8.80E-08 1.08E-07 1.40E-07
330 1.24E-07 1.43E-07 1.71E-07
10 bits
470 1.69E-07 1.89E-07 2.13E-07
680 2.38E-07 2.60E-07 2.80E-07
1000 3.45E-07 3.66E-07 3.84E-07
1500 5.15E-07 5.35E-07 5.48E-07
2200 7.42E-07 7.75E-07 7.78E-07
3300 1.10E-06 1.14E-06 1.14E-06
47 3.32E-08 5.10E-08 8.61E-08
8 bits
68 3.59E-08 5.35E-08 8.83E-08

DS13196 - Rev 7 page 130/205

 STM32H7B0xB
Operating conditions

Minimum sampling time (s)

Resolution RAIN (Ω)
Direct channels(1)(2) Fast channels(1)(3) Slow channels(1)(4)

100 4.10E-08 5.83E-08 9.22E-08

150 5.06E-08 6.76E-08 9.95E-08
220 6.61E-08 8.22E-08 1.11E-07
330 9.17E-08 1.08E-07 1.32E-07
470 1.24E-07 1.40E-07 1.63E-07
680 1.74E-07 1.91E-07 2.12E-07
1000 2.53E-07 2.70E-07 2.85E-07
8 bits
1500 3.73E-07 3.93E-07 4.05E-07
2200 5.39E-07 5.67E-07 5.75E-07
3300 8.02E-07 8.36E-07 8.38E-07
4700 1.13E-06 1.18E-06 1.18E-06
6800 1.62E-06 1.69E-06 1.68E-06
10000 2.36E-06 2.47E-06 2.45E-06
15000 3.50E-06 3.69E-06 3.65E-06

1. Guaranteed by design.
2. Direct channels are connected to analog I/Os (PA0_C, PA1_C, PC2_C and PC3_C) to optimize ADC performance.
3. Fast channels correspond for ADCx_INPx to PA6, PB1, PC4, PF11, PF13 and for ADCx_INNx to PA7, PB0, PC5, PF12, PF14
4. Slow channels correspond to all ADC inputs except for the Direct and Fast channels.

Figure 45. ADC conversion timing diagram

CLK

Mux Sampling(1) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

1/2 SMP Number of CLK clock cycles = ADC resolution / 2

Total conversion time: 0.5 +Tsamp + N/2

1. The sampling time defines the minimum sampling clock cycles (SMP) to be programmed in the ADC (refer to the product reference manual for details).

Table 93. ADC accuracy

Data guaranteed by characterization for BGA packages. The values for LQFP packages might differ. ADC DC accuracy values are measured
after internal calibration.
Symbol Parameter Conditions(1) Min Typ Max Unit

Single ended - +10/–20 -

Direct channel
Differential - ±15 -
Single ended - +10/–20 -
ET Total undadjusted error Fast channel LSB
Differential - ±15 -
Single ended - ±10 -
Slow channel
Differential - ±10 -

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions(1) Min Typ Max Unit

EO Offset error - - ±10 -

EG Gain error - - ±15 -
Single ended - +3/–1 -
ED Differential linearity error
Differential - +4.5/–1 -
Single ended - ±11 -
Direct channel LSB
Differential - ±7 -
Single ended - ±13 -
EL Integral linearity error Fast channel
Differential - ±7 -
Single ended - ±10 -
Slow channel
Differential - ±6 -
Single ended - 12.2 -
ENOB Effective number of bits Bits
Differential - 13.2 -
Single ended - 75.2 -
SINAD Signal-to-noise and distortion ratio
Differential - 81.2 -
Single ended - 77.0 -
SNR Signal-to-noise ratio dB
Differential - 81.0 -
Single ended - 87 -
THD Total harmonic distortion
Differential - 90 -

1. ADC clock frequency = 25 MHz, ADC resolution = 16 bits, VDDA=VREF+=3.3 V and BOOST=11.

Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog input pins should be
avoided as this significantly reduces the accuracy of the conversion being performed on another analog input.
It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative
currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 I/O current
injection characteristics does not affect the ADC accuracy.

Figure 46. ADC accuracy characteristics

VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
VSSA
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+

(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+

1. Example of an actual transfer curve.

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 STM32H7B0xB
Operating conditions

2. Ideal transfer curve.

3. End point correlation line.
4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
5. EO = Offset Error: deviation between the first actual transition and the first ideal one.
6. EG = Gain Error: deviation between the last ideal transition and the last actual one.
7. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
8. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation
line.

Figure 47. Typical connection diagram using the ADC with FT/TT pins featuring analog switch function

VDDA(4) VREF+(4)

I/O Sample-and-hold ADC converter

analog
RAIN(1) switch RADC
Converter

Cparasitic(2) Ilkg(3) CADC

VAIN Sampling
switch with
multiplexing

VSS VSS VSSA

MSv67871V3

1. Refer to Table 91. ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 63. I/O static characteristics). A high Cparasitic value downgrades conversion
accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 63. I/O static characteristics for the value of Ilkg.
4. Refer to .Figure 12. Power supply scheme.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 48. Power supply and reference decoupling
(VREF+ not connected to VDDA) or Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA),
depending on whether VREF+ is connected to VDDA or not. The 100 nF capacitors should be ceramic (good
quality). They should be placed them as close as possible to the chip.

DS13196 - Rev 7 page 133/205

 STM32H7B0xB
Operating conditions

Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA)

STM32

VREF+(1)

1 µF // 100 nF
VDDA

1 µF // 100 nF

VSSA/VREF-(1)

1. VREF+ input is not available on all package (refer to Table 1. STM32H7B0xB features and peripheral counts)
whereas VREF– is available only on UFBGA176+25, TFBGA225 with SMPS and TFBGA216. When VREF- is
not available, it is internally connected to VSSA.

Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA)

STM32

VREF+/VDDA(1)

1 µF // 100 nF

VREF-/VSSA(1)

1. VREF+ input is not available on all package (refer to Table 1. STM32H7B0xB features and peripheral counts)
whereas VREF– is available only on UFBGA176+25, TFBGA225 with SMPS and TFBGA216. When VREF- is
not available, it is internally connected to VSSA.

DS13196 - Rev 7 page 134/205

 STM32H7B0xB
Operating conditions

6.3.22 DAC characteristics

Table 94. DAC characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

VDDA Analog supply voltage - 1.8 3.3 3.6

VREF+ Positive reference voltage - 1.80 - VDDA V

VREF- Negative reference voltage - - VSSA -

connected to VSSA 5 - -
RL Resistive Load DAC output buffer ON
connected to VDDA 25 - - kΩ

RO Output Impedance DAC output buffer OFF 10.3 13 16

VDD = 2.7 V - - 1.6

Output impedance sample and hold
RBON DAC output buffer ON kΩ
mode, output buffer ON VDD = 2.0 V - - 2.6

VDD = 2.7 V - - 17.8

Output impedance sample and hold
RBOFF DAC output buffer OFF kΩ
mode, output buffer OFF VDD = 2.0 V - - 18.7

CL DAC output buffer OFF - - 50 pF

Capacitive Load
CSH Sample and Hold mode - 0.1 1 µF

VDDA
DAC output buffer ON 0.2 -
VDAC_OUT Voltage on DAC_OUT output −0.2 V
DAC output buffer OFF 0 - VREF+

±0.5 LSB - 2.05 -

±1 LSB - 1.97 -
Settling time (full scale: for a 12-bit Normal mode, DAC
code transition between the lowest output buffer ON, ±2 LSB - 1.67 -
and the highest input codes when CL ≤ 50 pF, RL ≥ 5 kΩ
tSETTLING ±4 LSB - 1.66 - µs
DAC_OUT reaches the final value
of ±0.5LSB, ±1LSB, ±2LSB, ±4LSB, ±8 LSB - 1.65 -
±8LSB)
Normal mode, DAC output buffer OFF, ±1LSB
- 1.7 2
CL=10 pF

Normal mode, DAC output buffer ON,

Wakeup time from off state (setting the - 5 7.5
CL ≤ 50 pF, RL = 5 kΩ
(2) ENx bit in the DAC Control register)
tWAKEUP µs
until the final value of ±1LSB is Normal mode, DAC output buffer OFF,
reached - 2 5
CL ≤ 10 pF

Normal mode, DAC output buffer ON,

PSRR DC VDDA supply rejection ratio - −80 −28 dB
CL ≤ 50 pF, RL = 5 kΩ

Sampling time in Sample and Hold MODE<2:0>_V12=100/101

- 0.7 2.6
mode (BUFFER ON)
ms
CL=100 nF MODE<2:0>_V12=110
tSAMP - 11.5 18.7
(code transition between the lowest (BUFFER OFF)
input code and the highest input code
when DAC_OUT reaches the ±1LSB MODE<2:0>_V12=111(3)
final value) - 0.3 0.6 µs
(INTERNAL BUFFER OFF)
Ileak Output leakage current - - - (4) nA

CIint Internal sample and hold capacitor - 1.8 2.2 2.6 pF

tTRIM Middle code offset trim time Minimum time to verify the each code 50 - - µs

VREF+ = 3.6 V - 850 -

Voffset Middle code offset for 1 trim code step µV
VREF+ = 1.8 V - 425 -

DS13196 - Rev 7 page 135/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

No load, middle code

- 360 -
(0x800)
DAC output buffer ON
No load, worst code
- 490 -
DAC quiescent (0xF1C)
IDDA(DAC)
consumption from VDDA No load, middle/worst
DAC output buffer OFF - 20 -
code (0x800)
360*TON/
Sample and Hold mode, CSH=100 nF - -
(TON+TOFF)(5)

No load, middle code

- 170 - µA
(0x800)
DAC output buffer ON
No load, worst code
- 170 -
(0xF1C)
No load, middle/worst
IDDV(DAC) DAC consumption from VREF+ DAC output buffer OFF - 160 -
code (0x800)

Sample and Hold mode, Buffer ON, CSH=100 nF 170*TON/

- -
(worst code) (TON+TOFF)(5)

Sample and Hold mode, Buffer OFF, 160*TON/

- -
CSH=100 nF (worst code) (TON+TOFF)(5)

1. Guaranteed by design, unless otherwise specified.

2. In buffered mode, the output can overshoot above the final value for low input code (starting from the minimum value).
3. DACx_OUT pin is not connected externally (internal connection only).
4. Refer to Table 63. I/O static characteristics.
5. TON is the refresh phase duration, while TOFF is the hold phase duration. Refer to the product reference manual for more details.

Table 95. DAC accuracy

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

DAC output buffer ON −2 - 2

DNL Differential non linearity(2) LSB
DAC output buffer OFF −2 - 2
DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ −4 - 4
INL Integral non linearity(3) LSB
DAC output buffer OFF, CL ≤ 50 pF, no RL −4 - 4

VREF+ = 3.6 V - - ±12

DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ
Offset Offset error at code 0x800(3) VREF+ = 1.8 V - - ±25 LSB

DAC output buffer OFF, CL ≤ 50 pF, no RL - - - ±8

Offset1 Offset error at code 0x001(4) DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±5 LSB

VREF+ = 3.6 V - - ±5
Offset error at code 0x800 after
OffsetCal DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ LSB
factory calibration VREF+ = 1.8 V - - ±7

DAC output buffer ON,CL ≤ 50 pF, RL ≥ 5 kΩ - - ±1

Gain Gain error(5) %
DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±1

DAC output buffer ON,CL ≤ 50 pF, RL ≥ 5 kΩ - - ±30

TUE Total undajusted error LSB
DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±12

Total undajusted error after

TUECal DAC output buffer ON CL ≤ 50pF, RL ≥ 5kΩ - - ±23 LSB
calibration
DAC output buffer ON CL ≤ 50pF, RL ≥ 5kΩ 1 kHz, BW 500KHz - 67.8 -
SNR Signal-to-noise ratio(6) dB
DAC output buffer OFF CL ≤ 50pF, no RL 1kHz, BW 500KHz - 67.8 -

DS13196 - Rev 7 page 136/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

DAC output buffer ON CL ≤ 50pF, RL ≥ 5kΩ, 1 kHz - −78,6 -

THD Total harmonic distorsion(6) dB
DAC output buffer OFF CL ≤ 50pF, no RL, 1 kHz - −78,6 -

DAC output buffer ON CL ≤ 50pF, RL ≥ 5kΩ, 1 kHz - 67.5 -

SINAD Signal-to-noise and distorsion ratio(6) dB
DAC output buffer OFF CL ≤ 50pF, no RL, 1 kHz - 67.5 -

DAC output buffer ON CL ≤ 50pF, RL ≥ 5kΩ, 1 kHz - 10.9 -

ENOB Effective number of bits dB
DAC output buffer OFF CL ≤ 50pF, no RL, 1 kHz - 10.9 -

1. Guaranteed by design, unless otherwise specified.

2. Difference between two consecutive codes minus 1 LSB.
3. Difference between the value measured at Code i and the value measured at Code i on a line drawn between Code 0 and last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between the ideal slope of the transfer function and the measured slope computed from code 0x000 and 0xFFF when the buffer
is OFF, and from code giving 0.2 V and (VREF+ − 0.2 V) when the buffer is ON.
6. Signal is −0.5dBFS with Fsampling = 1 MHz.

Figure 50. 12-bit buffered /non-buffered DAC

Buffered/Non-buffered DAC

Buffer(1)
R L

12-bit DAC_OUTx
digital to
analog
converter
C L

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by configuring
the BOFFx bit in the DAC_CR register.

6.3.23 Voltage reference buffer characteristics

Table 96. VREFBUF characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

VSCALE = 000 2.8 3.3 3.6

VSCALE = 001 2.4 - 3.6
Normal mode
VSCALE = 010 2.1 - 3.6
VSCALE = 011 1.8 - 3.6
VDDA Analog supply voltage V
VSCALE = 000 1.62 - 2.80
VSCALE = 001 1.62 - 2.40
Degraded mode(2)
VSCALE = 010 1.62 - 2.10
VSCALE = 011 1.62 - 1.80

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

VSCALE = 000 2.496(3) 2.5000 2.504(3)

Normal mode at 30°C, VSCALE = 001 2,0460 2.0490 2,0520

ILOAD=100 µA
VSCALE = 010 1,8010 1.8040 1,8060
VSCALE = 011 1,4995 1.5015 1,5040
VDDA− 150
Voltage Reference Buffer VSCALE = 000 - VDDA
VREFBUF_OUT mV V
Output
VDDA− 150
VSCALE = 001 - VDDA
mV
Degraded mode(2)
VDDA− 150
VSCALE = 010 - VDDA
mV
VDDA− 150
VSCALE = 011 - VDDA
mV
TRIM Trim step resolution - - - ±0.05 ±0.1 %
CL Load capacitor - - 0.5 1 1.50 uF

Equivalent Serial Resistor of

esr - - - - 2 Ω
CL

ILOAD Static load current - - - - 4 mA

ILOAD = 500 µA - 200 -

Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V ppm/V
ILOAD = 4 mA - 100 -

ILOAD_reg Load regulation 500 µA ≤ ILOAD ≤ 4 mA Normal Mode - 50 - ppm/ mA

Tcoeff
Tcoeff Temperature coefficient −40 °C < TJ < +130 °C - - - VREFINT + ppm/ °C
100
DC - - 60 -
PSRR Power supply rejection dB
100KHz - - 40 -
CL=0.5 µF - - 300 -

tSTART Startup time CL=1 µF - - 500 - µs

CL=1.5 µF - - 650 -

Control of maximum
DC current drive on
IINRUSH - - 8 - mA
VREFBUF_OUT during startup
phase(4)
ILOAD = 0 µA - - 15 25
VREFBUF consumption from
IDDA(VREFBUF) ILOAD = 500 µA - - 16 30 µA
VDDA
ILOAD = 4 mA - - 32 50

1. Guaranteed by design, unless otherwise specified.

2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (VDDA−drop voltage).
3. Guaranteed by tests in production.
4. To properly control VREFBUF IINRUSH current during the startup phase and the change of scaling, VDDA voltage should be in the range of
1.8 V-3.6 V, 2.1 V-3.6 V, 2.4 V-3.6 V and 2.8 V-3.6 V for VSCALE = 011, 010, 001 and 000, respectively.

DS13196 - Rev 7 page 138/205

 STM32H7B0xB
Operating conditions

6.3.24 Analog temperature sensor characteristics

Table 97. Analog temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

VSENSE linearity with temperature (from VSENSOR voltage) - - 3

TL(1) °C
VSENSE linearity with temperature (from ADC counter) - - 3

Average slope (from VSENSOR voltage) - 2 -

Avg_Slope(2) mV/°C
Average slope (from ADC counter) - 2 -

V30(3) Voltage at 30°C ± 5 °C - 0.62 - V

tstart_run(1) Startup time in Run mode (buffer startup) - - 25.2

µs
tS_temp (1)
ADC sampling time when reading the temperature 9 - -

Isens(1) Sensor consumption - 0.18 0.31

µA
Isensbuf (1)
Sensor buffer consumption - 3.8 6.5

1. Guaranteed by design.
2. Guaranteed by characterization results.
3. Measured at VDDA = 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte.

Table 98. Analog temperature sensor calibration values

Symbol Parameter Memory address

TS_CAL1 Temperature sensor raw data acquired value at 30 °C, VDDA=3.3 V 0x08FF F814 - 0x08FF F816

TS_CAL2 Temperature sensor raw data acquired value at 130 °C, VDDA=3.3 V 0x08FF F818 - 0x08FF F81A

6.3.25 Digital temperature sensor characteristics

Table 99. Digital temperature sensor characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

fDTS(2) Output Clock frequency - 500 750 1150 kHz

TLC(2) Temperature linearity coefficient VOS2 1660 2100 2750 Hz/°C

TJ =−40 °C to 30 °C −13 - 4
TTOTAL_ERROR(2) Temperature offset measurement, all VOS °C
TJ =30 °C to 130 °C −7 - 2

VOS2 0 - 0
TVDD_CORE Additional error due to supply variation °C
VOS0, VOS1, VOS3 −1 - 1
tTRIM Calibration time - - - 2 ms

tWAKE_UP Wake-up time from off state until DTS ready bit is set - - 67 116.00 μs

IDDCORE_DTS DTS consumption on VCORE - 8.5 30 70.0 μA

1. Guaranteed by design, unless otherwise specified.

2. Guaranteed by characterization results.

DS13196 - Rev 7 page 139/205

 STM32H7B0xB
Operating conditions

6.3.26 Temperature and VBAT monitoring

Table 100. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 26 - KΩ

Q Ratio on VBAT measurement - 4 - -

Er(1) Error on Q –10 - +10 %

tS_vbat(1) ADC sampling time when reading VBAT input 9 - - µs

VBAThigh High supply monitoring - 3.55 -

V
VBATlow Low supply monitoring - 1.36 -

1. Guaranteed by design.

Table 101. VBAT charging characteristics

Symbol Parameter Condition Min Typ Max Unit

VBRS in PWR_CR3= 0 - 5 -
RBC Battery charging resistor KΩ
VBRS in PWR_CR3= 1 - 1.5 -

Table 102. Temperature monitoring characteristics

Symbol Parameter Min(1) Typ(1) Max(1) Unit

TEMPhigh High temperature monitoring - 117 -

°C
TEMPlow Low temperature monitoring - –25 -

1. Guaranteed by design.

6.3.27 Voltage booster for analog switch

Table 103. Voltage booster for analog switch characteristics

Symbol Parameter Condition Min(1) Typ(1) Max(1) Unit

VDD Supply voltage - 1.62 2.6 3.6 V

tSU(BOOST) Booster startup time - - - 50 µs

1.62 V ≤ VDD ≤ 2.7 V - - 125

IDD(BOOST) Booster consumption µA
2.7 V < VDD < 3.6 V - - 250

1. Guaranteed by characterization results.

6.3.28 Comparator characteristics

Table 104. COMP characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

VDDA Analog supply voltage - 1.62 3.3 3.6

VIN Comparator input voltage range - 0 - VDDA V

VBG (2)
Scaler input voltage - -

VSC Scaler offset voltage - - ±5 ±10 mV

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

BRG_EN=0 (bridge disable) - 0.2 0.3

IDDA(SCALER) Scaler static consumption from VDDA µA
BRG_EN=1 (bridge enable) - 0.8 1
tSTART_SCALER Scaler startup time - - 140 250 µs

High-speed mode - 2 5
Comparator startup time to reach propagation
tSTART Medium mode - 5 20 µs
delay specification
Ultra-low-power mode - 15 80
High-speed mode - 50 80 ns
Propagation delay for 200 mV step with
Medium mode - 0.5 0.9
100 mV overdrive µs
Ultra-low-power mode - 2.5 7
tD (3)
High-speed mode - 50 120 ns
Propagation delay for step > 200 mV with
Medium mode - 0.5 1.2
100 mV overdrive only on positive inputs µs
Ultra-low-power mode - 2.5 7
Voffset Comparator offset error Full common mode range - ±5 ±20 mV

No hysteresis - 0 -
Low hysteresis 4 10 22
Vhys Comparator hysteresis mV
Medium hysteresis 8 20 37
High hysteresis 16 30 52
Static - 400 600
Ultra-low-power mode With 50 kHz ±100 mV nA
- 800 -
overdrive square signal
Static - 5 7
IDDA(COMP) Comparator consumption from VDDA Medium mode With 50 kHz ±100 mV
- 6 -
overdrive square signal
µA
Static - 70 100
High-speed mode With 50 kHz ±100 mV
- 75 -
overdrive square signal

1. Guaranteed by design, unless otherwise specified.

2. Refer to Section 6.3.6 Embedded reference voltage.
3. Guaranteed by characterization results.

6.3.29 Operational amplifier characteristics

Table 105. Operational amplifier characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

VDDA Analog supply voltage Range - 2 3.3 3.6

V
CMIR Common Mode Input Range - 0 - VDDA

25°C, no load on output - - ±1.5

VIOFFSET Input offset voltage mV
All voltages and temperature, no load - - ±2.5
ΔVIOFFSET Input offset voltage drift - - ±3.0 - μV/°C

Offset trim step at low

TRIMOFFSETP,
common input voltage - - 1.1 1.5 mV
TRIMLPOFFSETP
(0.1*VDDA)

DS13196 - Rev 7 page 141/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

Offset trim step at high

TRIMOFFSETN, mV
common input voltage - - 1.1 1.5
TRIMLPOFFSETN
(0.9*VDDA)

ILOAD Drive current - - - 500

μA
ILOAD_PGA Drive current in PGA mode - - - 270

CLOAD Capacitive load - - - 50 pF

CMRR Common mode rejection ratio - - 80 - dB

CLOAD ≤ 50pf / RLOAD ≥ 4 kΩ(2) at 1 kHz,

PSRR Power supply rejection ratio 50 66 - dB
Vcom=VDDA/2

Gain bandwidth for high 200 mV ≤ Output dynamic range ≤ VDDA -

GBW 4 7.3 12.3 MHz
supply range 200 mV

Slew rate (from 10% and 90% Normal mode - 3 -

SR V/µs
of output voltage) High-speed mode - 24 -
200 mV ≤ Output dynamic range ≤ VDDA -
AO Open loop gain 59 90 129 dB
200 mV
φm Phase margin - - 55 - °
GM Gain margin - - 12 - dB
Iload=max or RLOAD=min, VDDA
VOHSAT High saturation voltage - -
Input at VDDA −100 mV mV
VOLSAT Low saturation voltage Iload=max or RLOAD=min, Input at 0 V - - 100

CLOAD ≤ 50pf, RLOAD

Normal mode ≥ 4 kΩ, follower - 0.8 3.2
configuration
tWAKEUP Wake up time from OFF state µs
CLOAD ≤ 50pf, RLOAD
High speed
≥ 4 kΩ, follower - 0.9 2.8
mode
configuration
PGA gain = 2 −1 - 1
PGA gain = 4 −2 - 2
Non inverting gain error value
PGA gain = 8 −2.5 - 2.5
PGA gain = 16 −3 - 3
PGA gain = 2 −1 - 1
PGA gain = 4 −1 - 1
PGA gain Inverting gain error value %
PGA gain = 8 −2 - 2
PGA gain = 16 −3 - 3
PGA gain = 2 −1 - 1

External non-inverting gain PGA gain = 4 −3 - 3

error value PGA gain = 8 −3.5 - 3.5
PGA gain = 16 −4 - 4
PGA Gain=2 - 10/10 -
R2/R1 internal resistance PGA Gain=4 - 30/10 -
values in non-inverting PGA
mode(3) PGA Gain=8 - 70/10 - kΩ/
Rnetwork
PGA Gain=16 - 150/10 - kΩ
R2/R1 internal resistance PGA Gain = -1 - 10/10 -
values in inverting PGA
mode(3) PGA Gain = -3 - 30/10 -

DS13196 - Rev 7 page 142/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

R2/R1 internal resistance PGA Gain = -7 - 70/10 - kΩ/
Rnetwork values in inverting PGA
mode(3) PGA Gain = -15 - 150/10 - kΩ

Resistance variation (R1 or

Delta R - −15 - 15 %
R2)
Gain=2 - GBW/2 -

PGA bandwidth for different Gain=4 - GBW/4 -

MHz
non inverting gain Gain=8 - GBW/8 -
Gain=16 - GBW/16 -
PGA BW
Gain = -1 - 5.00 -

PGA bandwidth for different Gain = -3 - 3.00 -

MHz
inverting gain Gain = -7 - 1.50 -
Gain = -15 - 0.80 -
at 1 KHz - 140 -
en Voltage noise density output loaded with 4 kΩ nV/√Hz
at 10 KHz - 55 -
Normal mode - 570 1000
OPAMP consumption from no Load, quiescent
IDDA(OPAMP) High-speed µA
VDDA mode, follower - 610 1200
mode

1. Guaranteed by design, unless otherwise specified.

2. RLOAD is the resistive load connected to VSSA or to VDDA.
3. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance between the OPAMP
inverting input and ground. PGA gain = 1 + R2/R1.

6.3.30 Digital filter for Sigma-Delta Modulators (DFSDM) characteristics

Unless otherwise specified, the parameters given in Table 106. DFSDM measured timing 1.62-3.6 V for DFSDM
are derived from tests performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 20. General operating conditions and Section 6.3.1 .
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load CL = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• VOS level set to VOS0
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics (DìFSDM_CKINx, DFSDM_DATINx, DFSDM_CKOUT for DFSDM).

Table 106. DFSDM measured timing 1.62-3.6 V

Symbol Parameter Conditions Min Typ Max Unit

DFSDM
fDFSDMCLK 1.62 V < VDD < 3.6 V - - (1)
clock
SPI mode (SITP[1:0]=0,1), External clock mode
- - 20(2)
fCKIN (1/ Input clock (SPICKSEL[1:0]=0),
TCKIN) frequency SPI mode (SITP[1:0]=0,1), Internal clock mode MHz
- - 20(2)
(SPICKSEL[1:0]≠0)
Output
fCKOUT clock 1.62 < VDD < 3.6 V - - 20
frequency
Output Even
clock division,CKOUTDIV[7:0] 45 50 55
DuCyCKOUT 1.62 < VDD < 3.6 V %
frequency = n, 1, 3, 5, ...
duty cycle

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 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min Typ Max Unit

Output
clock Odd
DuCyCKOUT 1.62 < VDD < 3.6 V (((n/ (((n/2+1)/ (((n/ %
frequency division,CKOUTDIV[7:0]
2+1)/(n−1))*100)−5 (n−1))*100) 2+1)/(n−1))*100)+5
duty cycle = n, 2, 4, 6, ...

SPI mode
Input clock (SITP[1:0]=0,1),
twh(CKIN)
high and External clock mode - TCKIN/2 - 0.5 TCKIN/2 -
twl(CKIN)
low time (SPICKSEL[1:0]=0),
1.62 < VDD < 3.6 V

SPI mode
(SITP[1:0]=0,1),
Data input
tsu External clock mode - 4 - -
setup time
(SPICKSEL[1:0]=0),
1.62 < VDD < 3.6 V
ns
SPI mode
(SITP[1:0]=0,1),
Data input
th External clock mode - 0.5 - -
hold time
(SPICKSEL[1:0]=0),
1.62 < VDD < 3.6 V

Manchester Manchester mode

data period (SITP[1:0]=2,3),
(CKOUTDIV[7:0]+1) (2*CKOUTDIV[7:0])
TManchester (recovered Internal clock mode - -
x TDFSDMCLK x TDFSDMCLK(3)
clock (SPICKSEL[1:0]¹0),
period) 1.62 < VDD < 3.6 V

1. The maximum DFSDM kernel clock is specified in Section 6.3.1 .

2. The internal DFSDMCLK clock must be at least 4 times faster than the external CKIN clock.
3. The internal DFSDMCLK must be at least 6 times faster than the Manchester data frequency.

DS13196 - Rev 7 page 144/205

 STM32H7B0xB
Operating conditions

Figure 51. Channel transceiver timing diagrams

CKINy
(SPICKSEL=0)
SPI timing : SPICKSEL = 0

twl twh tr tf
tsu th

SITP = 00
DATINy

tsu th

SITP = 01

SPICKSEL=3
CKOUT

SPICKSEL=2
SPI timing : SPICKSEL = 1, 2, 3

SPICKSEL=1

twl twh tr tf
tsu th

SITP = 0
DATINy

tsu th

SITP = 1

SITP = 2
DATINy
Manchester timing

SITP = 3

recovered clock

recovered data 0 0 1 1 0
6.3.31 Camera interface (DCMI) timing specifications
Unless otherwise specified, the parameters given in Table 107. DCMI characteristics for DCMI are derived
from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in
Table 20. General operating conditions and Section 6.3.1 , with the following configuration:
• DCMI_PIXCLK polarity: falling
• DCMI_VSYNC and DCMI_HSYNC polarity: high

DS13196 - Rev 7 page 145/205

 STM32H7B0xB
Operating conditions

• Data formats: 14 bits

• Capacitive load CL=30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• Output speed is set to OSPEEDRy[1:0] = 11
• VOS level set to VOS0

Table 107. DCMI characteristics

Symbol Parameter Min(1) Max(1) Unit

- Frequency ratio DCMI_PIXCLK/fHCLK - 0.4 -

DCMI_PIXCLK Pixel Clock input - 80 MHz

Dpixel Pixel Clock input duty cycle 30 70 %

tsu(DATA) Data input setup time 2.5 -

-
th(DATA) Data hold time 1 -

tsu(HSYNC),
DCMI_HSYNC/ DCMI_VSYNC input setup time 3 - ns
tsu(VSYNC)
th(HSYNC),
DCMI_HSYNC/ DCMI_VSYNC input hold time 1 - -
th(VSYNC)

1. Guaranteed by design.

Figure 52. DCMI timing diagram

1/DCMI_PIXCLK

DCMI_PIXCLK

tsu(HSYNC) th(HSYNC)

DCMI_HSYNC

tsu(VSYNC) th(HSYNC)

DCMI_VSYNC
tsu(DATA) th(DATA)

DATA[0:13]

6.3.32 PSSI interface characteristics

Unless otherwise specified, the parameters given in Table 108 and 109for PSSI are derived from tests performed
under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 20. General
operating conditions and Section 6.3.1 , with the following configuration:
• PSSI_PDCK polarity: falling
• PSSI_RDY and PSSI_DE polarity: low
• Bus width : 16 lines
• DATA width : 32 bits
• Capacitive load C=30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• Output speed is set to OSPEEDRy[1:0] = 11

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Note: At VOS1, the performance in Transmit mode can be degraded by up to 5 % compared to VOS0. This is
indicated by a footnote when applicable.

Table 108. PSSI transmit characteristics

Guaranteed by characterization results.
Symbol Parameter Min Max(1) Unit

- Frequency ratio PSSI_PDCK/fHCLK - 0.4 -

PSSI_PDCK PSSI clock input - 50 MHz

Dpixel PSSI clock input duty cycle 30 70 %

tdv(DATA) Data output valid time - 10

tdh(DATA) Data output hold time 5 -

tdv((DE) DE output valid time - 14

ns
tdh(DE) DE output hold time 6 -

tsu(RDY) RDY input setup time 3 -

th(RDY) RDY input hold time 0 -

1. At VOS1, these values are degraded by up to 5 %.

Table 109. PSSI receive characteristics

Guaranteed by characterization results.
Symbol Parameter Min Max

- Frequency ratio PSSI_PDCK/fHCLK - 0.4

PSSI_PDCK PSSI clock input - 100

Dpixel PSSI clock input duty cycle 30 70

tsu(DATA) Data input setup time 2 -

th(DATA) Data input hold time 1 -

tsu((DE) DE input setup time 3 -

th(DE) DE input hold time 1 -

tov(RDY) RDY output valid time - 10

toh(RDY) RDY output hold time 4.5 -

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Figure 53. PSSI timing diagram in Transmit mode

tc(PDCK)
tw(PDCKH) tw(PDCKL)
tf(PDCK) tr(PDCK)
PSSI_PDCK

CKPOL = 0
(input)

CKPOL = 1

tov(DATA) toh(DATA)
PSSI D[15:0]
Invalid data OUT Valid data OUT Invalid data OUT
(output)
PSSI_DE

DEPOL = 0
(output)

tov(DE) toh(DE)

DEPOL = 1
PSSI_RDY

RDYPOL = 0
(input)

tsu(RDY) th(RDY)

RDYPOL = 1
MSv65388V1

Figure 54. PSSI timing diagram in Receive mode

tc(PDCK)
tw(PDCKH) tw(PDCKL)
tf(PDCK) tr(PDCK)
PSSI_PDCK

CKPOL = 0
(input)

CKPOL = 1

tsu(DATA)
thDATA)
PSSI D[15:0]
Invalid data IN Valid data IN Invalid data IN
(input)
tsu(DE)
th(DE)
PSSI_DE

DEPOL = 0
(output)

DEPOL = 1
tov(RDY) toh(RDY)
PSSI_RDY

RDYPOL = 0
(input)

RDYPOL = 1
MSv65389V1

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6.3.33 LCD-TFT controller (LTDC) characteristics

Unless otherwise specified, the parameters given in Table 110 for LCD-TFT are derived from tests performed
under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 20. General
operating conditions and Section 6.3.1 , with the following configuration:
• LCD_CLK polarity: high
• LCD_DE polarity: low
• LCD_VSYNC and LCD_HSYNC polarity: high
• Pixel formats: 24 bits
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load CL=30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS 0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.

Table 110. LTDC characteristics

Symbol Parameter Conditions Min Max(1) Unit

2.7 V < VDD < 3.6 V, 20 pF - 140

fCLK LTDC clock output frequency 2.7 V < VDD < 3.6 V - 133 MHz

1.62 V < VDD < 3.6 V - 66.5

DCLK LTDC clock output duty cycle - 45 55 %

tw(CLKH), tw(CLKL) Clock High time, low time - tw(CLK)/2−0.5 tw(CLK)/2+0.5

2.7 V < VDD < 3.6 V - 3.0

tv(DATA) Data output valid time
1.62 V < VDD < 3.6 V - 7.5

th(DATA) Data output hold time - 0 - ns

2.7 V < VDD < 3.6 V - 3.0

tv(HSYNC), tv(VSYNC), tv(DE) HSYNC/VSYNC/DE output valid time
1.62 V < VDD < 3.6 V - 7.5

th(HSYNC), th(VSYNC), th(DE) HSYNC/VSYNC/DE output hold time - 0 -

1. At VOS1, these values are degraded by up to 5 %.

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Figure 55. LCD-TFT horizontal timing diagram

tCLK

LCD_CLK

LCD_VSYNC

tv(HSYNC) tv(HSYNC)

LCD_HSYNC
tv(DE) th(DE)

LCD_DE
tv(DATA)
LCD_R[0:7]
Pixel Pixel Pixel
LCD_G[0:7] 1 2 N
LCD_B[0:7]
th(DATA)
HSYNC Horizontal Horizontal
Active width
width back porch back porch

One line

Figure 56. LCD-TFT vertical timing diagram

tCLK

LCD_CLK

tv(VSYNC) tv(VSYNC)

LCD_VSYNC

LCD_R[0:7]
LCD_G[0:7] M lines data
LCD_B[0:7]

VSYNC Vertical Vertical

Active width
width back porch back porch

One frame

6.3.34 Timer characteristics

The parameters given in Table 111. TIMx characteristics are guaranteed by design.
Refer to Section 6.3.16 I/O port characteristics for details on the input/output alternate function characteristics
(output compare, input capture, external clock, PWM output).

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Table 111. TIMx characteristics

Symbol Parameter Conditions(1) Min(2) Max(2) Unit

AHB/APBx prescaler=1 or 2 or 4,
1 - tTIMxCLK
fTIMxCLK = 280 MHz
tres(TIM) Timer resolution time
AHB/APBx prescaler>4, fTIMxCLK =
1 - tTIMxCLK
140 MHz
Timer external clock frequency on
fEXT 0 fTIMxCLK/2 MHz
CH1 to CH4 fTIMxCLK = 280 MHz
ResTIM Timer resolution - 16/32 bit

Maximum possible count with 32-

tMAX_COUNT - - 65536 × 65536 tTIMxCLK
bit counter

1. The maximum timer frequency on APB1 or APB2 is up to 280 MHz, by setting the TIMPRE bit in the RCC_CFGR register. If
APBx prescaler is 1 or 2 or 4, then TIMxCLK = rcc_hclk1, otherwise TIMxCLK = 4x Frcc_pclkx_d2.
2. Guaranteed by design.

6.3.35 Low-power timer characteristics

Table 112. LPTIMx characteristics

Symbol Parameter Min Max Unit

tres(TIM) Timer resolution time 1 - tTIMxCLK

fLPTIMxCLK Timer kernel clock 0 100

MHz
fEXT Timer external clock frequency on Input1 and Input2 0 fLPTIMxCLK/2

ResTIM Timer resolution - 16 bit

tMAX_COUNT Maximum possible count - 65536 tTIMxCLK

6.3.36 Communication interfaces

6.3.36.1 I2C interface characteristics

The I2C interface meets the timings requirements of the I2C-bus specification and user manual revision 03 for:
• Standard-mode (Sm): with a bit rate up to 100 kbit/s
• Fast-mode (Fm): with a bit rate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The parameters given in Table 113 and Table 114are obtained with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 00
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly configured (refer to
RM0455 reference manual) and when the i2c_ker_ck frequency is greater than the minimum shown in the table
below:

Table 113. Minimum i2c_ker_ck frequency in all I2C modes

Symbol Parameter Condition Min Unit

Standard-mode - 2
Analog Filtre ON, DNF=0 9
fI2CCLK I2CCLK frequency Fast-mode MHz
Analog Filtre OFF, DNF=1 9

Fast-mode Plus Analog Filtre ON, DNF=0 19

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Symbol Parameter Condition Min Unit

fI2CCLK I2CCLK frequency Fast-mode Plus Analog Filtre OFF, DNF=1 16 -

The SDA and SCL I/O requirements are met with the following restrictions:
• The SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDDIOx is disabled, but still present.
• The 20 mA output drive requirement in Fast-mode Plus is not supported. This limits the maximum load CLoad
supported in Fm+, which is given by these formulas:
tr(SDA/SCL)=0.8473xRPxCLoad
RP(min)= (VDD-VOL(max))/IOL(max)
Where RP is the I2C lines pull-up. Refer to Section 6.3.16 I/O port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog filter characteristics:

Table 114. I2C analog filter characteristics

Symbol Parameter Min(1) Max(1) Unit

tAF Maximum pulse width of spikes that are suppressed by analog filter 50(2) 260(3) ns

1. Guaranteed by design.
2. Spikes whose width is lower than tAF(min) are filtered.
3. Spikes whose width is higer than tAF(max) are not filtered.

6.3.36.2 USART interface characteristics

Unless otherwise specified, the parameters given in Table 115 for USART are derived from tests performed under
the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 20. General
operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load CL = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics (NSS, CK, TX, RX for USART).

Table 115. USART characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

Master mode 35
Slave receiver mode 93.0
fCK USART clock frequency - - MHz
Slave mode transmitter mode, 2.7 V < VDD < 3.6 V 29.0

Slave mode transmitter mode, 1.62 V < VDD < 3.6 V 22.0

tsu(NSS) NSS setup time Slave mode tker+2 - -

th(NSS) NSS hold time Slave mode 2 - - -

tw(SCKH), tw(SCKL) CK high and low time Master mode 1/fck/2−2 1/fck/2 1/fck/2+2

Master mode 17 - -
tsu(RX) Data input setup time ns
Slave mode 1 - -

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Symbol Parameter Conditions Min Typ Max(1) Unit

Master mode 0 - -
th(RX) Data input hold time
Slave mode 1.5 - -
Slave mode transmitter mode, 1.62 V < VDD < 3.6 V - 15.5 22
tv(TX) Data output valid time Slave mode transmitter mode, 2.7 V < VDD < 3.6 V - 15.5 17 ns

Master mode - 1.5 2

Slave mode 12 - -
th(TX) Data output hold time
Master mode 1 - -

1. At VOS1, these values are degraded by up to 5 %.

Figure 57. USART timing diagram in Master mode

High
NSS input
tc(SCK)
SCK Output

CPHA=0
CPOL=0
CPHA=0
CPOL=1
SCK Output

CPHA=1
CPOL=0
CPHA=1
CPOL=1
tw(SCKH)
tsu(RX) tw(SCKL) tr(SCK)/tf(SCK)
RX
INPUT MSB IN BIT6 IN LSB IN
th(RX)
TX
OUTPUT MSB OUT BIT1 OUT LSB OUT
tv(TX) th(TX)
MSv65386V1

1. Measurement points are done at 0.5VDD and with external CL = 30 pF.

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Operating conditions

Figure 58. USART timing diagram in Slave mode

NSS
input
tc(SCK) th(NSS)
tsu(NSS) tw(SCKH) tr(SCK)
CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(TX) tw(SCKL) tv(TX) th(TX) tf(SCK) tdis(TX)

TX output First bit OUT Next bits OUT Last bit OUT

th(RX)
tsu(RX)

RX input First bit IN Next bits IN Last bit IN

MSv65387V1

6.3.36.3 SPI interface characteristics

Unless otherwise specified, the parameters given in Table 116 for SPI are derived from tests performed under
the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 20. General
operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load CL = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics (SS, SCK, MOSI, MISO for SPI).

Table 116. SPI dynamic characteristics

Symbol Parameter Conditions Min(1) Typ(1) Max(1)(2) Unit

Master mode 2.7 < VDD< 3.6 V, SPI1, 2, 3 125/100(3)

Master mode, 2.7 < VDD<3.6 V, SPI4, 5, 6 100

Master mode, 1.62 < VDD < 3.6 V, SPI4, 5, 6 75/38(3)

fSCK SPI clock frequency - - MHz
Slave receiver mode, 1.62 < VDD < 3.6 V 100

Slave mode transmitter/full duplex, 2.7 < VDD < 3.6 V 45/31(3)

Slave mode transmitter/full duplex, 1.62 <VDD < 3.6 V 29/18(3)

tsu(SS) SS setup time Slave mode 2 - -

ns
th(SS) SS hold time Slave mode 1 - -

tsu(MI) Data input setup time Master mode 3 - - ns

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Symbol Parameter Conditions Min(1) Typ(1) Max(1)(2) Unit

tsu(SI) Data input setup time Slave mode 2 - -

th(MI) Master mode 3 - -

Data input hold time
th(SI) Slave mode 1 - -

ta(SO) Data output access time Slave mode 9 13 27

tdis(SO) Data output disable time Slave mode 0 1 5

Slave mode, 2.7 < VDD < 3.6 V - 9/15(3) 11/16(3) ns

tv(SO)
Slave mode, 1.62 < VDD < 3.6 V - 9/15(3) 17/27(3)
Data output valid time
Master mode, 2.7 < VDD < 3.6 V - 1/5(3) 1.5/7(3)
tv(MO)
Master mode, 1.62 < VDD < 3.6 V - 1/5(3) 2/13(3)

th(SO) Slave mode, 1.62 < VDD < 3.6 V 7 - -

Data output hold time
th(MO) Master mode 0 - -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. Using PC3_C / PC2_C (not available on all packages).

Figure 59. SPI timing diagram - slave mode and CPHA = 0

SS input

tc(SCK) th(SS)

tsu(SS) tw(SCKH) tr(SCK)

CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tf(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

th(SI)
tsu(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv69584V1

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Figure 60. SPI timing diagram - slave mode and CPHA = 1(1)

SS input

tc(SCK)

tsu(SS) tw(SCKH) tf(SCK) th(SS)

CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tr(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv69585V1

1. Measurement points are done at 0.5VDD and with external CL = 30 pF.

Figure 61. SPI timing diagram - master mode(1)

High
SS input

tc(SCK)
SCK Output

CPHA=0
CPOL=0
CPHA=0
CPOL=1
SCK Output

CPHA=1
CPOL=0
CPHA=1
CPOL=1
tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INPUT MSB IN BIT6 IN LSB IN
th(MI)
MOSI
MSB OUT BIT1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)
MSv69586V1

1. Measurement points are done at 0.5VDD and with external CL = 30 pF.

6.3.36.4 I2S Interface characteristics

Unless otherwise specified, the parameters given in Table 117 for I2S are derived from tests performed under
the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 20. General
operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10

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• Capacitive load CL = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics (CK,SD,WS).

Table 117. I2S dynamic characteristics

Symbol Parameter Conditions Min(1) Max(1)(2) Unit

fMCK I2S main clock output - - 50 MHz

Master Tx - 50/33(3)
Master Rx - 40
fCK I2S clock frequency MHz
Slave Tx - 31/18.5(3)
Slave Rx - 50
tv(WS) WS valid time Master mode - 5.5

th(WS) WS hold time Master mode 0 -

tsu(WS) WS setup time Slave mode 2 -

th(WS) WS hold time Slave mode 1 -

tsu(SD_MR) Master receiver 2 -

Data input setup time
tsu(SD_SR) Slave receiver 2 -
ns
th(SD_MR) Master receiver 4.5 -
Data input hold time
th(SD_SR) Slave receiver 1 -

tv(SD_ST) Slave transmitter (after enable edge) - 16/27(3)

Data output valid time
tv(SD_MT) Master transmitter (after enable edge) - 4/15(3)

th(SD_ST) Slave transmitter (after enable edge) 7 -

Data output hold time
th(SD_MT) Master transmitter (after enable edge) 0 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. Using PC3_C / PC2_C (not available on all packages).

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Figure 62. I2S slave timing diagram (Philips protocol)(1)

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.

Figure 63. I2S master timing diagram (Philips protocol)(1)

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.

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6.3.36.5 SAI characteristics

Unless otherwise specified, the parameters given in Table 118 for SAI are derived from tests performed under
the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 20. General
operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load CL = 30 pF
• IO Compensation cell activated.
• Measurement points are done at CMOS levels: 0.5VDD
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output alternate function
characteristics (SCK,SD,WS).

Table 118. SAI characteristics

Symbol Parameter Conditions Min(1) Max(1)(2) Unit

fMCK SAI Main clock output - - 50

Master transmitter, 2.7 ≤ VDD ≤ 3.6 V - 34

Master transmitter, 1.62 ≤ VDD ≤ 3.6 V - 27

Master receiver, 1.6 ≤ VDD ≤ 3.6 V - 27 MHz

fCK SAI clock frequency
Slave transmitter, 2.7 ≤ VDD ≤ 3.6 V - 37
Slave transmitter, 1.62 ≤ VDD ≤ 3.6 V - 30
Slave receiver, 1.62 ≤ VDD≤ 3.6 V - 50

Master mode,2.7 ≤ VDD ≤ 3.6 V - 14.5

tv(FS) FS valid time
Master mode, 1.62 ≤ VDD ≤ 3.6 V - 18.5

tsu(FS) FS setup time Slave mode 8 -

FS hold time Master mode 1 -

th(FS)
FS hold time Slave mode 2 -

tsu(SD_A_MR) Master receiver 0.5 -

Data input setup time
tsu(SD_B_SR) Slave receiver 1 -

th(SD_A_MR) Master receiver 5.5 - ns

Data input hold time
th(SD_B_SR) Slave receiver 3 -

Slave transmitter (after enable edge), 2.7 ≤ VDD ≤ 3.6 V - 13.5

tv(SD_B_ST) Data output valid time
Slave transmitter (after enable edge), 1.62 ≤ VDD ≤ 3.6 V - 16.5

th(SD_B_ST) Data output hold time Slave transmitter (after enable edge) 8 -

Master transmitter (after enable edge), 2.7 ≤ VDD ≤ 3.6 V - 14

tv(SD_A_MT) Data output valid time
Master transmitter (after enable edge), 1.62 ≤ VDD ≤ 3.6 V - 18

th(SD_A_MT) Data output hold time Master transmitter (after enable edge) 7.5 -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. APB clock frequency must be at least twice SAI clock frequency.

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Figure 64. SAI master timing waveforms

1/fSCK

SAI_SCK_X
th(FS)

SAI_FS_X(output)
tv(FS) tv(SD_MT) th(SD_MT)

SAI_SD_X(transmit)
Slot n Slot n+2

tsu(SD_MR) th(SD_MR)

SAI_SD_X(receive) Slot n

Figure 65. SAI slave timing waveforms

1/fSCK

SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)

SAI_FS_X(input)
tsu(FS) tv(SD_ST) th(SD_ST)

SAI_SD_X(transmit)
Slot n Slot n+2

tsu(SD_SR) th(SD_SR)

SAI_SD_X(receive) Slot n

6.3.36.6 MDIO characteristics

Unless otherwise specified, the parameters given in Table 119 are derived from tests performed under the
ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 20. General operating
conditions, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Measurement points are done at CMOS levels: 0.5VDD
• I/O compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.

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Table 119. MDIO Slave timing parameters

Symbol Parameter Min Typ Max(1) Unit

FMDC Management Data Clock - - 30 MHz

td(MDIO) Management Data Iput/output output valid time 9 11 21

tsu(MDIO) Management Data Iput/output setup time 2.5 - - ns

th(MDIO) Management Data Iput/output hold time 1 - -

1. At VOS1, these values are degraded by up to 5 %.

Figure 66. MDIO Slave timing diagram

tMDC)

td(MDIO)

tsu(MDIO) th(MDIO)

6.3.36.7 SD/SDIO MMC card host interface (SDMMC) characteristics

Unless otherwise specified, the parameters given in Table 120 and Table 121 for SDIO are derived from
tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage summarized in
Table 20. General operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load CL=30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output characteristics.

Table 120. Dynamics characteristics: SDMMC characteristics, VDD=2.7 to 3.6 V

Above 100 MHz, CL = 20 pF.
Symbol Parameter Conditions Min(1) Typ(1) Max(1)(2) Unit

fPP Clock frequency in data transfer mode - 0 - 133 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -

tW(CKL) Clock low time fPP =52 MHz 8.5 9.5 -

ns
tW(CKH) Clock high time fPP =52 MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR/DDR mode

DS13196 - Rev 7 page 161/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min(1) Typ(1) Max(1)(2) Unit

tISU Input setup time HS - 2.5 - -

ns
tIH Input hold time HS - 0.5 - -

tIDW(3) Input valid window (variable window) - 3.0 - - -

CMD, D outputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR/DDR mode

tOV Output valid time HS - - 6 6.5
ns
tOH Output hold time HS - 5 - -

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD - 2.5 - -
ns
tIHD Input hold time SD - 0.5 - -

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD - - 1 1.5
ns
tOHD Output hold default time SD - 0 - -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. The minimum window of time where the data needs to be stable for proper sampling in tuning mode.

Table 121. Dynamics characteristics: eMMC characteristics VDD=1.71V to 1.9V

Above 100 MHz, CL = 20 pF.
Symbol Parameter Conditions Min(1) Typ(1) Ma(1)(2) Unit

fPP Clock frequency in data transfer mode - 0 - 85 MHz

tW(CKL) Clock low time fPP =52 MHz 8.5 9.5 -

ns
tW(CKH) Clock high time fPP =52 MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in eMMC mode

tISU Input setup time HS - 2.5 - -

tIH Input hold time HS - 0.5 - - ns

tIDW(3)
Input valid window (variable window) - 3.5 - -

CMD, D outputs (referenced to CK) in eMMC mode

tOVD Output valid time HS - - 6 6.5
ns
tOHD Output hold time HS - 5.5 - -

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. The minimum window of time where the data needs to be stable for proper sampling in tuning mode.

DS13196 - Rev 7 page 162/205

 STM32H7B0xB
Operating conditions

Figure 67. SDIO high-speed mode

Figure 68. SD default mode

CK
tOVD tOHD
D, CMD(output)

Figure 69. DDR mode

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)

Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)

Data output IO0 IO1 IO2 IO3 IO4 IO5

tsf(IN) thf(IN) tsr(IN) thr(IN)

Data input IO0 IO1 IO2 IO3 IO4 IO5

6.3.36.8 USB OTG_FS characteristics

Unless otherwise specified, the parameters given in Table 122. Dynamics characteristics: USB OTG_FS for ULPI
are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
summarized in Table 20. General operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load CL=20 pF

DS13196 - Rev 7 page 163/205

 STM32H7B0xB
Operating conditions

• Measurement points are done at CMOS levels: 0.5VDD

• IO Compensation cell activated.
• VOS level set to VOS0
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output characteristics.

Table 122. Dynamics characteristics: USB OTG_FS

Symbol Parameter Condition Min Typ Max Unit

VDD33USB USB transceiver operating voltage - 3.0(1) - 3.6 V

RPUI Embedded USB_DP pull-up value during idle - 900 1250 1600

RPUR Embedded USB_DP pull-up value during reception - 1400 2300 3200 Ω

ZDRV Output driver impedance(2) Driver high and low 28 36 44

1. The USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics that are degraded in the 2.7 to
3.0 V voltage range.
2. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching impedance is
already included in the embedded driver.

6.3.36.9 USB OTG_HS characteristics

Unless otherwise specified, the parameters given in Table 123 for ULPI are derived from tests performed under
the ambient temperature, fPCLKx frequency and VDD supply voltage summarized in Table 20. General operating
conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load CL=20 pF
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output characteristics.

Table 123. Dynamics characteristics: USB ULPI

Symbol Parameter Condition Min(1) Typ(1) Max(1)(2)(3) Unit

tSC Control in (ULPI_DIR , ULPI_NXT) setup time - 3.5 - -

tHC Control in (ULPI_DIR, ULPI_NXT) hold time - 2 - -

tSD Data in setup time - 3 - -

ns
tHD Data in hold time - 0 - -

2.7 < VDD < 3.6 V, CL=20 pF - 7 8.5

tDC/tDD Control/Datal output delay
1.71 < VDD < 3.6 V, CL=15 pF - 9 13

1. Guaranteed by characterization results.

2. At VOS1, these values are degraded by up to 5 %.
3. For external ULPI transceivers operating at 1.8 V, check carefully the timing values for compatibility.

DS13196 - Rev 7 page 164/205

 STM32H7B0xB
Operating conditions

Figure 70. ULPI timing diagram

Clock

tSC tHC
Control In
(ULPI_DIR,ULPI_NXT)
tSD tHD
data In
(8-bit)

tDC tDC
Control out
(ULPI_STP)
tDD
data out
(8-bit)

6.3.36.10 JTAG/SWD interface characteristics

Unless otherwise specified, the parameters given in Table 124 and Table 125 for JTAG/SWD are derived from
tests performed under the ambient temperature, frcc_cpu_ck frequency and VDD supply voltage summarized in
Table 20. General operating conditions and Section 6.3.1 , with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load CL=30 pF
• Measurement points are done at CMOS levels: 0.5VDD
• VOS level set to VOS0
Note: At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote
when applicable.
Refer to Section 6.3.16 I/O port characteristics for more details on the input/output characteristics:

Table 124. Dynamics JTAG characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

Fpp 2.7 V <VDD< 3.6 V - - 35 MHz

TCK clock frequency
1/tc(TCK) 1.62 V <VDD< 3.6 V - - 27.5

tisu(TMS) TMS input setup time - 1 - -

tih(TMS) TMS input hold time - 1 - -

tisu(TDI) TDI input setup time - 1.5 - -

ns
tih(TDI) TDI input hold time - 1 - -

2.7 V <VDD< 3.6 V - 8 14

tov(TDO) TDO output valid time
1.62 V <VDD< 3.6 V - 8 18

toh(TDO) TDO output hold time - 7 - -

1. At VOS1, these values are degraded by up to 5 %.

Table 125. Dynamics SWD characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

Fpp 2.7V <VDD< 3.6 V - - 76

SWCLK clock frequency MHz
1/tc(SWCLK) 1.62 <VDD< 3.6 V - - 55.5

DS13196 - Rev 7 page 165/205

 STM32H7B0xB
Operating conditions

Symbol Parameter Conditions Min Typ Max(1) Unit

tisu(SWDIO) SWDIO input setup time - 2 - -

tih(SWDIO) SWDIO input hold time - 1 - -

2.7V <VDD< 3.6 V - 8.5 13 ns

tov(SWDIO) SWDIO output valid time
1.62 <VDD< 3.6 V - 8.5 18

toh(SWDIO) SWDIO output hold - 8 - -

1. At VOS1, these values are degraded by up to 5 %.

Figure 71. JTAG timing diagram

tc(TCK)

TCK

tsu(TMS/TDI) th(TMS/TDI)
tw(TCKL) tw(TCKH)
TDI/TMS

tov(TDO) toh(TDO)

TDO

Figure 72. SWD timing diagram

tc(SWCLK)

SWCLK

tsu(SWDIO) th(SWDIO) twSWCLKL) tw(SWCLKH)

SWDIO
(receive)

tov(SWDIO) toh(SWDIO)

SWDIO
(transmit)

DS13196 - Rev 7 page 166/205

 STM32H7B0xB
Package information

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

DS13196 - Rev 7 page 167/205

 STM32H7B0xB
LQFP64 package information

7.1 LQFP64 package information

This is a 64-pins, 10 x 10 mm, low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 73. LQFP64 - Outline(15.)

BOTTOM VIEW Package LQFP64 (package code 5W)

2 1
(2)
R1

H
R2

B
B-
N
O
TI
C
SE
B GAUGE PLANE
D 1/4

0.25
(6)
S
B

E 1/4 L
4x N/4 TIPS
3
(L1)
aaa C A-B D (1) (11)
bbb H A-B D 4x
SECTION A-A

(13) (N – 4)x e

C
A
0.05
A2 A1 (12)
b
ddd C A-B D ccc C

D (4)

(5) (2) D1 (9) (11)

(10)
D (3) b WITH PLATING
N (4)

1 E 1/4 (11) (11)

2
3 c c1
(3) A (6) B (3) (5)
D 1/4 (2)
E1 E b1 BASE METAL
(11)

A A SECTION B-B
(Section A-A)

TOP VIEW

DS13196 - Rev 7 page 168/205

 STM32H7B0xB
LQFP64 package information

Table 126. LQFP64 - Mechanical data

millimeters inches(14.)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630

A1(12.) 0.05 - 0.15 0.0020 - 0.0059

A2 1.35 1.40 1.45 0.0531 0.0551 0.0571

b(9.)(11.) 0.17 0.22 0.27 0.0067 0.0087 0.0106

b1(11.) 0.17 0.20 0.23 00067 0.0079 0.0091

c(11.) 0.09 - 0.20 0.0035 - 0.0079

c1(11.) 0.09 - 0.16 0.0035 - 0.0063

D(4.) 12.00 BSC 0.4724 BSC

D1(2.)(5.) 10.00 BSC 0.3937 BSC

E(4.) 12.00 BSC 0.4724 BSC

E1(2.)(5.) 10.00 BSC 0.3937 BSC

e 0.500 BSC 0.0197 BSC

L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -

N(13.) 64

Θ 0° 3.5° 7° 0° 3.5° 7°
Θ1 0° - - 0° - -
Θ2 10° 12° 14° 10° 12° 14°
Θ3 10° 12° 14° 10° 12° 14°
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -

aaa(1.) 0.20 0.0079

bbb(1.) 0.20 0.0079

ccc(1.) 0.08 0.0031

ddd(1.) 0.08 0.0031

DS13196 - Rev 7 page 169/205

 STM32H7B0xB
LQFP64 package information

Notes
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The top package body size may be smaller than the bottom package size by as much as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1and E1 do not include mold flash or protrusions. Allowable mold flash or protrusions is “0.25
mm” per side. D1 and E1 are Maximum plastic body size dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead
width to exceed the maximum “b” dimension by more than 0.08 mm. Dambar cannot be located on the lower
radius or the foot. Minimum space between protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5
mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 74. LQFP64 - Recommended footprint

48 33

0.3
49 0.5 32

12.7

10.3

10.3
64 17

1.2
1 16

7.8

12.7

1. Dimensions are expressed in millimeters.

7.1.1 Device marking for LQFP64

The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.

DS13196 - Rev 7 page 170/205

 STM32H7B0xB
LQFP64 package information

Figure 75. LQFP64 marking example (package top view)

Product identification(1)
STM32H7B0

RBT6

Date code

Y WW

Revision code
Pin 1 indentifier

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples
in production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS13196 - Rev 7 page 171/205

 A

STM32H7B0xB
LQFP100 package information

7.2 LQFP100 package information

This LQFP is a 100 pins, 14 x 14 mm, low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 76. LQFP100 - Outline(15.)

Package LQFP100 (Package code 1L)

θ2 θ1
(2)
R1

H
R2

B
B-
N
O
(6)

TI
C
SE
D1/4 B GAUGE PLANE

S
E1/4
B θ
4x N/4 TIPS
θ3 L
4x (L1)
aaa C A-B D
bbb H A-B D (1) (11)

BOTTOM VIEW SECTION A-A

(N-4) x e (13)

C
A (9) (11)
0.05
ccc C b WITH PLATING
A2 A1 b aaa C A-BD
(12)

SIDE VIEW

D (4)
(11) c
(2) (5) D1 c1 (11)

D (3)
(10) (4)
N

b1 BASE METAL
1 (11)
2
3 E1/4 SECTION B-B

D1/4 (6) (2)

A B
(5)

E1 E

SECTION A-A

A A

TOP VIEW 1L_LQFP100_ME_V3

DS13196 - Rev 7 page 172/205

 STM32H7B0xB
LQFP100 package information

Table 127. LQFP100 - Mechanical data

millimeters inches(14.)
Symbol
Min Typ Max Min Typ Max

A - 1.50 1.60 - 0.0590 0.0630

A1(12.) 0.05 - 0.15 0.0020 - 0.0059

A2 1.35 1.40 1.45 0.0531 0.0551 0.0571

b(9.)(11.) 0.17 0.22 0.27 0.0067 0.0087 0.0106

b1(11.) 0.17 0.20 0.23 0.0067 0.0079 0.0090

c(11.) 0.09 - 0.20 0.0035 - 0.0079

c1(11.) 0.09 - 0.16 0.0035 - 0.0063

D(4.) 16.00 BSC 0.6299 BSC

D1(2.)(5.) 14.00 BSC 0.5512 BSC

E(4.) 16.00 BSC 0.6299 BSC

E1(2.)(5.) 14.00 BSC 0.5512 BSC

e 0.50 BSC 0.0197 BSC

L 0.45 0.60 0.75 0.0177 0.0236 0.0295

L1(1.)(11.) - 1.00 - - 0.0394 -

N(13.) 100

Θ 0° 3.5° 7° 0° 3.5° 7°
Θ1 0° - - 0° - -
Θ2 10° 12° 14° 10° 12° 14°
Θ3 10° 12° 14° 10° 12° 14°
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -

aaa(1.) 0.20 0.0079

bbb(1.) 0.20 0.0079

ccc(1.) 0.08 0.0031

ddd(1.) 0.08 0.0031

DS13196 - Rev 7 page 173/205

 STM32H7B0xB
LQFP100 package information

Notes
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The top package body size may be smaller than the bottom package size by as much as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1and E1 do not include mold flash or protrusions. Allowable mold flash or protrusions is “0.25
mm” per side. D1 and E1 are Maximum plastic body size dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead
width to exceed the maximum “b” dimension by more than 0.08 mm. Dambar cannot be located on the lower
radius or the foot. Minimum space between protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5
mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 77. LQFP100 - Recommended footprint

75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7

1. Dimensions are expressed in millimeters.

DS13196 - Rev 7 page 174/205

 STM32H7B0xB
LQFP100 package information

7.2.1 Device marking for LQFP100

The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.

Figure 78. LQFP100 marking example (package top view)

Product identification(1)
STM32H7B0
Revision code
VBT6

Date code
Y WW
Pin 1
indentifier

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples
in production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS13196 - Rev 7 page 175/205

 STM32H7B0xB
LQFP144 package information

7.3 LQFP144 package information

LQFP144 is a 144-pin, 20 x 20 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 79. LQFP144 - Outline(15.)

BOTTOM VIEW

2 1
(2)
R1

H
R2

B
B-
N
O
TI
C
SE
(6) B GAUGE PLANE
D 1/4

0.25
S
B
L
3
E 1/4 (L1)
(1) (11)
4x N/4 TIPS
aaa C A-B D SECTION A-A
bbb H A-B D 4x

(N-4)x e
C
A
0.05 (12) ddd C A-B D
A2 A1 b ccc C

D (4)
D1 (2) (5)
(10) (3) D (9) (11)
N (4)
b WITH PLATING

1
2
3 E 1/4

(11) (11)
c c1
(6)
D 1/4 (2)
(3) A B (3) (5)

E1 E b1 BASE METAL
(11)

SECTION B-B

A A
(Section A-A)

TOP VIEW

DS13196 - Rev 7 page 176/205

 STM32H7B0xB
LQFP144 package information

Table 128. LQFP144 - Mechanical data

millimeters inches(14.)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630

A1(12.) 0.05 - 0.15 0.0020 - 0.0059

A2 1.35 1.40 1.45 0.0531 0.0551 0.0571

b(9.)(11.) 0.17 0.22 0.27 0.0067 0.0087 0.0106

b1(11.) 0.17 0.20 0.23 0.0067 0.0079 0.0090

c(11.) 0.09 - 0.20 0.0035 - 0.0079

c1(11.) 0.09 - 0.16 0.0035 - 0.0063

D(4.) 22.00 BSC 0.8661 BSC

D1(2.)(5.) 20.00 BSC 0.7874 BSC

E(4.) 22.00 BSC 0.8661 BSC

E1(2.)(5.) 20.00 BSC 0.7874 BSC

e 0.50 BSC 0.0197 BSC

L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF

N(13.) 144

Θ 0° 3.5° 7° 0° 3.5° 7°
Θ1 0° - - 0° - -
Θ2 10° 12° 14° 10° 12° 14°
Θ3 10° 12° 14° 10° 12° 14°
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa 0.20 0.0079
bbb 0.20 0.0079
ccc 0.08 0.0031
ddd 0.08 0.0031

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The top package body size may be smaller than the bottom package size by as much as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1and E1 do not include mold flash or protrusions. Allowable mold flash or protrusions is “0.25
mm” per side. D1 and E1 are Maximum plastic body size dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead
width to exceed the maximum “b” dimension by more than 0.08 mm. Dambar cannot be located on the lower
radius or the foot. Minimum space between protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5
mm pitch packages.

DS13196 - Rev 7 page 177/205

 STM32H7B0xB
LQFP144 package information

10. Exact shape of each corner is optional.

11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 80. LQFP144 - Recommended footprint

108 73
1.35

109 0.35 72

0.50

19.90 17.85
22.60

144 37

1 36

19.90
22.60

1. Dimensions are expressed in millimeters.

DS13196 - Rev 7 page 178/205

 STM32H7B0xB
LQFP144 package information

7.3.1 Device marking for LQFP144

The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.

Figure 81. LQFP144 marking example (package top view)

Product identification(1)
STM32H7B0ZBT6

Revision code

Date code

Y WW
Pin 1
indentifier

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples
in production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS13196 - Rev 7 page 179/205

 STM32H7B0xB
LQFP176 package information

7.4 LQFP176 package information

This LQFP is a 176-pin, 24 x 24 mm, 0.5 mm pitch, low profile quad flat package.
Note: See list of notes in the notes section.

Figure 82. LQFP176 - Outline(15.)

Package LQFP176 (package code 1T)

θ2 θ1

R1

H R2

B(See SECTION B-B)

GAUGE PLANE
0.25
D1/4
S θ
B
L
E1/4 θ3
4x N/4 TIPS 4x (L1)
bbb H A-B D
aaa C A-B D

BOTTOM VIEW SECTION A-A

A2 0.05
(N-4) x e
C
A
A1 ddd C A-BD ccc C
b

SIDE VIEW

D
D1
D
N
b WITH PLATING

E1/4

c c1
D1/4
A B
E1 E b1 BASE METAL

SECTION A-A
A A
SECTION B-B

TOP VIEW 1T_LQFP176_ME_V1

DS13196 - Rev 7 page 180/205

 STM32H7B0xB
LQFP176 package information

Table 129. LQFP176 - Mechanical data

millimeters inches(14.)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630

A1(12.) 0.050 - 0.150 0.0020 - 0.0059

A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

b(9.)(11.) 0.170 0.220 0.270 0.0067 0.0087 0.0106

b1(11.) 0.170 0.200 0.230 0.0067 0.0079 0.0091

c(11.) 0.090 - 0.200 0.0035 - 0.0079

c1(11.) 0.090 - 0.160 0.0035 - 0.063

D(4.) 26.000 1.0236

D1(2.)(5.) 24.000 0.9449

E(4.) 26.000 0.0197

E1(2.)(5.) 24.000 0.9449

e 0.500 0.1970
L 0.450 0.600 0.750 0.0177 0.0236 0.0295

L1(1.)(11.) 1 REF 0.0394 REF

N(13.) 176

θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
θ2 10° 12° 14° 10° 12° 14°
θ3 10° 12° 14° 10° 12° 14°
R1 0.080 - - 0.0031 - -
R2 0.080 - 0.200 0.0031 - 0.0079
S 0.200 - - 0.0079 - -

aaa(1.) 0.200 0.0079

bbb(1.) 0.200 0.0079

ccc(1.) 0.080 0.0031

ddd(1.) 0.080 0.0031

DS13196 - Rev 7 page 181/205

 STM32H7B0xB
LQFP176 package information

Notes
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The top package body size may be smaller than the bottom package size by as much as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1and E1 do not include mold flash or protrusions. Allowable mold flash or protrusions is “0.25
mm” per side. D1 and E1 are Maximum plastic body size dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead
width to exceed the maximum “b” dimension by more than 0.08 mm. Dambar cannot be located on the lower
radius or the foot. Minimum space between protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5
mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 83. LQFP176 - Recommended footprint

1.2
176 133
1 0.5 132

0.3
26.7

21.8

44 89
45 88
1.2

21.8

26.7

Note: Dimensions are expressed in millimeters.

7.4.1 Device marking for LQFP176

The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.

DS13196 - Rev 7 page 182/205

 STM32H7B0xB
LQFP176 package information

Figure 84. LQFP176 marking example (package top view)

Product identification(1)
STM32H7B0IBT6

Revision code

Date code
Y WW
Pin 1
indentifier

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples
in production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS13196 - Rev 7 page 183/205

 STM32H7B0xB
UFBGA169 package information

7.5 UFBGA169 package information

This UFBGA is a 169 balls, 7 x 7 mm, 0.50 mm pitch, ultra thin profile fine pitch ball grid array package

Figure 85. UFBGA169 - Outline

UFBGA169 package (package code A0YV)

Z Seating plane
A2 A4
ddd Z
A
A3 A1
b
SIDE VIEW A1 ball A1 ball
identifier index area X
E
E1
e F

A
F

D1 D

e
Y
N
13 1
BOTTOM VIEW Øb (1 69 balls) TOP VIEW
Ø eee M Z X Y
Ø fff M Z

1. Drawing is not to scale.

2. – The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or
metalized markings, or other feature of package body or integral heat slug.
– A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1
corner. Exact shape of each corner is optional.

DS13196 - Rev 7 page 184/205

 STM32H7B0xB
UFBGA169 package information

Table 130. UFBGA169 - Mechanical data

millimeters inches (1)

Symbol
Min. Typ. Max. Min. Typ. Max.

A(2) - - 0.600 - - 0.0236

A1 - - 0.110 - - 0.0043
A2 - 0.130 - - 0.0051 -
A4 - 0.320 - - 0.0126 -

b(3) 0.230 0.280 0.330 0.0091 0.0110 0.0130

D 6.850 7.000 7.150 0.2697 0.2756 0.2815

D1 - 6.000 - - 0.2362 -
E 6.850 7.000 7.150 0.2697 0.2756 0.2815
E1 - 6.000 - - 0.2362 -
e - 0.500 - - 0.0197 -
F - 0.500 - - 0.0197 -
ddd - - 0.080 - - 0.0031

eee (4) - - 0.015 - - 0.0059

fff(5) - - 0.050 - - 0.0020

1. Values in inches are converted from mm and rounded to four decimal digits.
2. • Ultra Thin profile: 0.50 < A ≤ 0.65 mm / Fine pitch: e < 1.00 mm pitch.
• The total profile height (dim A) is measured from the seating plane to the top of the component
• The maximum total package height is calculated by the following methodology:
• A Max = A1 Typ + A2 Typ + A4 Typ + √ (A1²+A2²+A4² tolerance values)
3. The typical balls diameters before mounting is 0.20 mm.
4. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B. For each ball there
is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datum A and B as
defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone.
5. The tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball
there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis
perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained
entirely in the respective zone eee above The axis of each ball must lie simultaneously in both tolerance zones.

Figure 86. UFBGA169 - Recommended footprint

Dpad

Dsm

DS13196 - Rev 7 page 185/205

 STM32H7B0xB
UFBGA169 package information

Table 131. UFBGA169 - recommended PCB design rules (0.5 mm pitch BGA)

Dimension Recommended values

Pitch 0.5 mm
Dpad 0.27 mm
0.35 mm typ. (depends on the soldermask registration
Dsm
tolerance)
Solder paste 0.27 mm aperture diameter

7.5.1 Device marking for UFBGA169

The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.

Figure 87. UFBGA169 marking example (package top view)

Ball 1
indentifier

Product identification(1)
STM32H

7B0ABI6Q

Date code

Y WW Revision code

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples
in production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS13196 - Rev 7 page 186/205

 STM32H7B0xB
UFBGA(176+25) package information

7.6 UFBGA(176+25) package information

This UFBGA is a 176+25 balls, 10 x 10 mm, 0.65 mm pitch, ultra thin profile fine pitch ball grid array package.

Figure 88. UFBGA(176+25) - Outline

Seating plane Package UFBGA 176+25 (package code A0E7)

C A4
ddd C

A
A2 A3 b A1
A1 ball A
A1 ball index E
identifier area
E1
e F
A
F

D1 D

e
B
R
15 1
Øb (176 + 25 balls)
BOTTOM VIEW TOP VIEW
Ø eee M C A B
Ø fff M C

1. Drawing is not to scale.

2. The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized
markings, or other feature of package body or integral heat slug. A distinguishing feature is allowable on the
bottom surface of the package to identify the terminal A1 corner. Exact shape of each corner is optional.

DS13196 - Rev 7 page 187/205

 STM32H7B0xB
UFBGA(176+25) package information

Table 132. UFBGA(176+25) - Mechanical data

millimeters inches (1)

Symbol
Min. Typ. Max. Min. Typ. Max.

A(2) - - 0.60 - - 0.0236

A1 0.05 0.08 0.11 0.0020 0.0031 0.0043

A2 - 0.45 - - 0.0177 -
A3 - 0.13 - - 0.0051 -
A4 - 0.32 - - 0.0126 -
b 0.24 0.29 0.34 0.0094 0.0114 0.0134
D 9.85 10.00 10.15 0.3878 0.03937 0.3996
D1 - 9.10 - - 0.3583 -
E 9.85 10.00 10.15 0.3878 0.03937 0.3996
E1 - 9.10 - - 0.3583 -
e - 0.65 - - 0.0256 -
F - 0.45 - - 0.0177 -
ddd - - 0.08 - - 0.0031

eee (3) - - 0.15 - - 0.0059

fff(4) - - 0.05 - - 0.0020

1. Values in inches are converted from mm and rounded to four decimal digits.
2. Ultra thin profile: 0.50 < A Max \u0001 0.65 mm / Fine pitch: e < 1.00 mm. The total profile height (Dim.A) is measured from
the seating plane “C” to the top of the component.
3. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B. For each ball there
is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datum A and B as
defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone.
4. The tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball
there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis
perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained
entirely in the respective zone eee above The axis of each ball must lie simultaneously in both tolerance zones.

Figure 89. UFBGA(176+25) - Recommended footprint

Dpad

Dsm

DS13196 - Rev 7 page 188/205

 STM32H7B0xB
Thermal characteristics

Table 133. UFBGA(176+25) - Recommended PCB design rules (0.65 mm pitch BGA)

Dimension Recommended values

Pitch 0.65 mm
Dpad 0.300 mm
0.400 mm typ. (depends on the soldermask registration
Dsm
tolerance)
Stencil opening 0.300 mm aperture diameter
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm

7.6.1 Device marking for UFBGA176+25

The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.

Figure 90. UFBGA176+25 marking example (package top view)

Product identification(1)
STM32H7B0

IBK6Q Revision code

Date code
Ball 1 Y WW
indentifier

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples
in production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

7.7 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated using the following
equation:
TJmax = TAmax + (PDmax × ΘJA)
Where:

DS13196 - Rev 7 page 189/205

 STM32H7B0xB
Thermal characteristics

• TAmax is the maximum ambient temperature in °C,

• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PDmax is the sum of PINTmax and PI/Omax (PDmax = PINTmax + PI/Omax),
• PINTmax is the product of IDD and VDD, expressed in Watts. This is the maximum chip internal power.
PI/Omax represents the maximum power dissipation on output pins where:
PI/Omax = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the application.

Table 134. Thermal characteristics

Symbol Definition Parameter value unit

Thermal resistance junction-ambient LQFP64 - 10 x 10 mm /0.5 mm

48.8
pitch
Thermal resistance junction-ambient LQFP100 - 14 x 14 mm /0.5 mm
47.4
pitch
Thermal resistance junction-ambient LQFP144 - 20 x 20 mm /0.5 mm
46
Thermal resistance pitch
ΘJA °C/W
junction-ambiant Thermal resistance junction-ambient LQFP176 - 24 x 24 mm /0.5 mm
43.6
pitch
Thermal resistance junction-ambient UFBGA169 - 7 x 7 mm /0.5 mm
41.4
pitch
Thermal resistance junction-ambient UFBGA176+25 - 10 x 10 mm /0.65
44.4
mm pitch
Thermal resistance junction-board LQFP64 - 10 x 10 mm /0.5 mm pitch 37.2
Thermal resistance junction-board LQFP100 - 14 x 14 mm /0.5 mm
39.2
pitch
Thermal resistance junction-board LQFP144 - 20 x 20 mm /0.5 mm
41.3
Thermal resistance pitch
ΘJB °C/W
junction-board Thermal resistance junction-board LQFP176 - 24 x 24 mm /0.5 mm
40.2
pitch
Thermal resistance junction-board UFBGA169 - 7 x 7 mm /0.5 mm pitch 15.3
Thermal resistance junction-board UFBGA176+25 - 10 x 10 mm /0.65
25
mm pitch
Thermal resistance junction-case LQFP64 - 10 x 10 mm /0.5 mm pitch 13
Thermal resistance junction-case LQFP100 - 14 x 14 mm /0.5 mm pitch 12.8
Thermal resistance junction-case LQFP144 - 20 x 20 mm /0.5 mm pitch 12.6
Thermal resistance
ΘJC Thermal resistance junction-case LQFP176 - 24 x 24 mm /0.5 mm pitch 11.5 °C/W
junction-case
Thermal resistance junction-case UFBGA169 - 7 x 7 mm /0.5 mm pitch 19.9
Thermal resistance junction-case UFBGA176+25 - 10 x 10 mm /0.65
18.9
mm pitch

7.7.1 Reference documents

• JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural Convection (Still Air).
Available from www.jedec.org.
• For information on thermal management, refer to application note “Thermal management guidelines for
STM32 32-bit Arm Cortex MCUs applications” (AN5036) available from www.st.com.

DS13196 - Rev 7 page 190/205

 STM32H7B0xB
Ordering information

8 Ordering information

Example: STM32 H 7B0 Z B T 6 Q TR

Device family
STM32 = Arm-based 32-bit microcontroller

Product type
H = High performance

Device subfamily
7B0 = STM32H7B0 Value line with cryptographic accelerator

Pin count
R = 64 pins
V = 100 pins/balls
Z = 144 pins
A = 169 balls
I = 176 or 176 + 25 pins/balls

Flash memory size

B = 128 Kbytes

Package
T = LQFP ECOPACK2
K = UFBGA 0.65 mm pitch ECOPACK2
I = UFBGA 0.5 mm pitch ECOPACK2

Temperature range
6 = Industrial temperature range, –40 to 85 °C

Option
Q = with SMPS
Blank = without SMPS

Packing
TR = tape and reel
No character = tray or tube

For a list of available options (such as speed and package) or for further information on any aspect of this device,
contact your nearest ST sales office.

DS13196 - Rev 7 page 191/205

 STM32H7B0xB

Important security notice

The STMicroelectronics group of companies (ST) places a high value on product security, which is why the
ST product(s) identified in this documentation may be certified by various security certification bodies and/or
may implement our own security measures as set forth herein. However, no level of security certification and/or
built-in security measures can guarantee that ST products are resistant to all forms of attacks. As such, it is the
responsibility of each of ST's customers to determine if the level of security provided in an ST product meets the
customer needs both in relation to the ST product alone, as well as when combined with other components and/or
software for the customer end product or application. In particular, take note that:
• ST products may have been certified by one or more security certification bodies, such as Platform
Security Architecture (www.psacertified.org) and/or Security Evaluation standard for IoT Platforms
(www.trustcb.com). For details concerning whether the ST product(s) referenced herein have received
security certification along with the level and current status of such certification, either visit the relevant
certification standards website or go to the relevant product page on www.st.com for the most up to date
information. As the status and/or level of security certification for an ST product can change from time to
time, customers should re-check security certification status/level as needed. If an ST product is not shown
to be certified under a particular security standard, customers should not assume it is certified.
• Certification bodies have the right to evaluate, grant and revoke security certification in relation to ST
products. These certification bodies are therefore independently responsible for granting or revoking
security certification for an ST product, and ST does not take any responsibility for mistakes, evaluations,
assessments, testing, or other activity carried out by the certification body with respect to any ST product.
• Industry-based cryptographic algorithms (such as AES, DES, or MD5) and other open standard technologies
which may be used in conjunction with an ST product are based on standards which were not developed
by ST. ST does not take responsibility for any flaws in such cryptographic algorithms or open technologies
or for any methods which have been or may be developed to bypass, decrypt or crack such algorithms or
technologies.
• While robust security testing may be done, no level of certification can absolutely guarantee protections
against all attacks, including, for example, against advanced attacks which have not been tested for, against
new or unidentified forms of attack, or against any form of attack when using an ST product outside of
its specification or intended use, or in conjunction with other components or software which are used
by customer to create their end product or application. ST is not responsible for resistance against such
attacks. As such, regardless of the incorporated security features and/or any information or support that
may be provided by ST, each customer is solely responsible for determining if the level of attacks tested
for meets their needs, both in relation to the ST product alone and when incorporated into a customer end
product or application.
• All security features of ST products (inclusive of any hardware, software, documentation, and the like),
including but not limited to any enhanced security features added by ST, are provided on an "AS
IS" BASIS. AS SUCH, TO THE EXTENT PERMITTED BY APPLICABLE LAW, ST DISCLAIMS ALL
WARRANTIES, EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES
OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, unless the applicable written and
signed contract terms specifically provide otherwise.

DS13196 - Rev 7 page 192/205

 STM32H7B0xB

Revision history
Table 135. Document revision history

Date Revision Changes

20-Dec-2019 1 Initial release.

Updated Octo-SPI interface in Table 1. STM32H7B0xB features and peripheral
counts.
Updated Figure 2. Power-up/power-down sequence in Section 6.1.6 Power
supply scheme.
Updated HSLV feature description in Section 3.8 General-purpose input/outputs
(GPIOs).
In Section 5 Pin descriptions: updated Table 6. Legend/abbreviations used in the
pinout table; changed SPDIFRX into SPDIFRX1 and updated all SPDIFRX1 pin
names.
Updated Table 17. Voltage characteristics to add VREF+ in the list of external
main supply voltage.
Removed clock frequencies from Table 20. General operating conditions and
added new Section 6.3.1 .
Changed condition for tRSTTEMPO in Table 27. Reset and power control block
characteristics.
Added IDD50USB in Table 30. USB regulator characteristics.
Updated Table 38. Typical current consumption in System Stop mode, added
Table 39. Typical current consumption RAM shutoff in Stop mode, and added
IWDG and changed SPDIFRX into SPDIFRX1 in Table 42. Peripheral current
27-Apr-2020 2 consumption in Run mode.
Table 56. Flash memory programming: updated tME description and unit.
In the whole Section 6.3.18 FMC characteristics, replaced sentence "the TKERCK
is the fmc_ker_ck clock period" by "the Tfmc_ker_ck is the kernel clock period".
Section 6.3.19 Octo-SPI interface characteristics: added parameter
measurement conditions, updated Table 88. OCTOSPI characteristics in SDR
mode and Table 89. OCTOSPI characteristics in DTR mode (with DQS)/Octal
and Hyperbus, updated Figure 42. OctoSPI Hyperbus clock, Figure 43. OctoSPI
Hyperbus read and Figure 44. OctoSPI Hyperbus write.
Updated Figure 48. Power supply and reference decoupling (VREF+ not
connected to VDDA), note 1. and note 1..
Section 6.3.30 Digital filter for Sigma-Delta Modulators (DFSDM)
characteristics, Section 6.3.31 Camera interface (DCMI) timing
specificationsSection 6.3.33 LCD-TFT controller (LTDC) characteristics,
Section 6.3.36.2 USART interface characteristics, Section 6.3.36.3 SPI
interface characteristics, Section 6.3.36.4 I2S Interface characteristics,
Section 6.3.36.5 SAI characteristics, Section 6.3.36.7 SD/SDIO MMC
card host interface (SDMMC) characteristics, Section 6.3.36.8 USB
OTG_FS characteristics, Section 6.3.36.9 USB OTG_HS characteristics,
Section 6.3.36.10 JTAG/SWD interface characteristics: changed VOS level to
VOS0 in the parameter measurement conditions.
Updated note related to ULPI interface availability on packages that do not
feature PC2 and PC3 I/Os in Table 1. STM32H7B0xB features and peripheral
counts.
Updated Table 18. Current characteristics, Table 19. Thermal characteristics and
Figure 13. Current consumption measurement scheme.
08-Jul-2020 3 Updated Figure 12. Power supply scheme. Added note to VREFINT in
Table 28. Embedded reference voltage.Added Table 31. Inrush current
and inrush electric charge characteristics for LDO and SMPS. Updated
Table 44. Low-power mode wakeup timings, Table 32. Typical and maximum
current consumption in Run mode, code with data processing running from ITCM,
regulator ON and Table 33. Typical and maximum current consumption in Run
mode, code with data processing running from flash memory, cache ON.

DS13196 - Rev 7 page 193/205

 STM32H7B0xB

Date Revision Changes

Updated Table 66. Output timing characteristics (HSLV OFF) and
Table 67. Output timing characteristics (HSLV ON).
Updated Table 60. ESD absolute maximum ratings.
Added notes related to performance degradation at VOS1 in Section 6.3.18 FMC
characteristics, Section 6.3.19 Octo-SPI interface characteristics,
Section 6.3.32 PSSI interface characteristics, Section 6.3.33 LCD-
TFT controller (LTDC) characteristics, Section 6.3.36.2 USART
interface characteristics, Section 6.3.36.3 SPI interface characteristics,
Section 6.3.36.4 I2S Interface characteristics, Section 6.3.36.5 SAI
characteristics, Section 6.3.36.6 MDIO characteristics, Section 6.3.36.7 SD/
SDIO MMC card host interface (SDMMC) characteristics, Section 6.3.36.9 USB
OTG_HS characteristics and Section 6.3.36.10 JTAG/SWD interface
characteristics. Updated F(CLK) measurement conditions in Table 88. OCTOSPI
characteristics in SDR mode and Table 89. OCTOSPI characteristics in DTR
mode (with DQS)/Octal and Hyperbus.
Added Figure 45. ADC conversion timing diagram.
Added Section 6.3.32 PSSI interface characteristics.
Updated Figure 57. USART timing diagram in Master mode and
Figure 58. USART timing diagram in Slave mode.
Added note related to ULPI transceivers operating at 1.8 V in
Table 123. Dynamics characteristics: USB ULPI.
Updated VDDMMC separate supply pad in Section 2 Description.
In Section 3.31 True random number generator (RNG), changed "random
number generator" in "true random number generator" and description updated.
Updated Figure 12. Power supply scheme and Section 6.3.2 VCAP external
capacitor.
Added VBAT in Section 6.3.1 General operating conditions.
16-Sep-2020 4
Updated High-speed external user clock generated from an external source and
Low-speed external user clock generated from an external source.
Added reference to application note AN4899 in Section 6.3.16 I/O port
characteristics.
Updated DuCyCKOUT in Table 106. DFSDM measured timing 1.62-3.6 V
Updated and .
Updated VHSEL maximum value in Table 45. High-speed external user clock
28-Sep-2020 5
characteristics.
Added indication that patents apply to the devices in Section Features.
Added reference to errata sheet in Section 1 Introduction.
Updated WKUP signals in Figure 1. STM32H7B0xB block diagram and in
Table 7. STM32H7B0xB pin/ball definition.
Updated Section 3.40 Serial peripheral interfaces (SPI)/integrated interchip
sound interfaces (I2S).
Added note to TRIM parameter in Table 50. HSI oscillator characteristics.
Extended Figure 46. ADC accuracy characteristics to both ADC resolutions and
04-May-2021 6 updated Figure 47. Typical connection diagram using the ADC with FT/TT pins
featuring analog switch function.
Replace 110 °C by 130 °C in Table 98. Analog temperature sensor calibration
values.
Updated tsu(ADV-CLKH), th(CLKH-ADV), tsu(NWAIT-CLKH) and th(CLKH-NWAIT) minimum
values in Table 9. Updated tsu(DV-CLKH), th(CLKH-DV), t(NWAIT-CLKH) and th(CLKH-
NWAIT) minimum values in Table 80. Synchronous non-multiplexed NOR/PSRAM
read timings. Updated tsu(SDCLKH _Data) and th(SDCLKH _Data) minimum values in
Table 84. SDRAM read timings. Updated tsu(SDCLKH_Data) and th(SDCLKH_Data)
minimum values in Table 85. LPSDR SDRAM read timings.

DS13196 - Rev 7 page 194/205

 STM32H7B0xB

Date Revision Changes

Section 6.3.19 Octo-SPI interface characteristics:
• Updated tS(IN)//tH(IN) conditions and minimum values in Table 88. OCTOSPI
characteristics in SDR mode and updated Figure 40. OctoSPI timing
diagram - SDR mode.
• Updated Table 89. OCTOSPI characteristics in DTR mode (with DQS)/
Octal and Hyperbus and Figure 41. OctoSPI timing diagram - DTR mode.
• Updated Figure 42. OctoSPI Hyperbus clock, Figure 43. OctoSPI Hyperbus
read and Figure 44. OctoSPI Hyperbus write.
Table 116. SPI dynamic characteristics:
• Changed tsu(MI) and th(MI) minimum values in Master mode.
• Removed tw(SCKH), tw(SCKL).
Table 120. Dynamics characteristics: SDMMC characteristics, VDD=2.7 to 3.6 V:
• Modified tISU and tIH minimum values for CMD/ D inputs in High-speed
mode.
• Modified tISUD and tIH minimum values for CMD/ D inputs in Default mode.
Table 121. Dynamics characteristics: eMMC characteristics VDD=1.71V to 1.9V:
• Removed SDIO_CK/fPCLK2 frequency ratio.
• Modified tISU and tIH minimum values in CMD, D inputs (referenced to CK)
in eMMC mode.
Section 7.5 UFBGA169 package information:
• Added note 2 below Figure 85. UFBGA169 - Outline.
• Updated Table 130. UFBGA169 - Mechanical data.
• Removed note related to non-solder mask below Figure 86. UFBGA169 -
Recommended footprint.
Section 7.6 UFBGA(176+25) package information:
• Added note 2 below .
• Updated .
Renamed SPIx_NSS signal into SPIx_SS.
Updated Table 18. Current characteristics.
Removed fTraceCK / fJTCK from Table 21. Maximum allowed clock frequencies.
Updated note 3 in Table 38. Typical current consumption in System Stop mode.
Updated Table 64. Output voltage characteristics for all I/Os except PC13, PC14,
PC15 and PI8 and Table 65. Output voltage characteristics for PC13, PC14,
PC15 and PI8. Added Table 68. Pxy_C and Pxy analog switch characteristics.
Added note to td(SDCLKL- SDNE) maximum value in Table 84. SDRAM read
timings, Table 85. LPSDR SDRAM read timings, Table 86. SDRAM write timings
and Table 87. LPSDR SDRAM write timings.
19-May-2022 7
Updated Figure 47. Typical connection diagram using the ADC with FT/TT pins
featuring analog switch function and notes below figures.
Added note to tSAMP in Table 94. DAC characteristics.
Updated Table 106. DFSDM measured timing 1.62-3.6 V.
In Table 115. USART characteristics, replaced tsu(SI) and tsu(MI) by tsu(RX), th(SI)
and th(MI) by th(RX), tv(SO) and tv(MO) by tv(TX), and th(SO) and th(MO) by th(TX).
Updated Section 7.1 LQFP64 package information, Section 7.2 LQFP100
package information, Section 7.5 UFBGA169 package information and
Section 7.6 UFBGA(176+25) package information.
Added Section Important security notice.

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Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.1 Arm® Cortex®-M7 with FPU. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.2 Memory protection unit (MPU). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.3 Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.3.1 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.3.2 Secure access mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.3.3 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.4 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.5 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.5.1 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.5.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.5.3 Voltage regulator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.5.4 SMPS step-down converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.6 Low-power modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7 Reset and clock controller (RCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.7.1 Clock management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.7.2 System reset sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.8 General-purpose input/outputs (GPIOs). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.9 Bus-interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.10 DMA controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.11 Chrom-ART Accelerator (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.12 Chrom-GRC™ (GFXMMU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.13 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.14 Extended interrupt and event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.15 Cyclic redundancy check calculation unit (CRC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.16 Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.17 Octo-SPI memory interface (OCTOSPI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.18 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.19 Analog temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.20 Digital temperature sensor (DTS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.21 VBAT operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.22 Digital-to-analog converters (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

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3.23 Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

3.24 Ultra-low-power comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.25 Operational amplifiers (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.26 Digital filter for sigma-delta modulators (DFSDM). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.27 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.28 Parallel synchronous slave interface (PSSI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.29 LCD-TFT display controller (LTDC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.30 JPEG codec (JPEG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.31 True random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.32 Cryptographic acceleration (CRYP and HASH). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.33 On-the-fly decryption engine (OTFDEC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.34 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.34.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.34.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.34.3 Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.34.4 Low-power timers (LPTIM1, LPTIM2, LPTIM3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.34.5 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.34.6 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.34.7 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.35 Real-time clock (RTC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.36 Tamper and backup registers (TAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.37 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.38 Universal synchronous/asynchronous receiver transmitter (USART) . . . . . . . . . . . . . . . . . . . 29
3.39 Low-power universal asynchronous receiver transmitter (LPUART) . . . . . . . . . . . . . . . . . . . 30
3.40 Serial peripheral interfaces (SPI)/integrated interchip sound interfaces (I2S) . . . . . . . . . . . . 30
3.41 Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.42 SPDIFRX receiver interface (SPDIFRX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.43 Single wire protocol master interface (SWPMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.44 Management data input/output (MDIO) slaves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.45 SD/SDIO/MMC card host interfaces (SDMMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.46 Controller area network (FDCAN1, FDCAN2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.47 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.48 High-definition multimedia interface (HDMI) - consumer electronics control (CEC) . . . . . . . 33
3.49 Debug infrastructure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
5 Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35

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6 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62

6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.2 Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.3.2 VCAP external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
6.3.3 SMPS step-down converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
6.3.4 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
6.3.5 Embedded reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.3.6 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
6.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
6.3.8 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
6.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
6.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6.3.12 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
6.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
6.3.14 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
6.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
6.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
6.3.17 NRST pin characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
6.3.18 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
6.3.19 Octo-SPI interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
6.3.20 Delay block (DLYB) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.21 16-bit ADC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.22 DAC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
6.3.23 Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
6.3.24 Analog temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
6.3.25 Digital temperature sensor characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
6.3.26 Temperature and VBAT monitoring. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
6.3.27 Voltage booster for analog switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

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6.3.28 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

6.3.29 Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
6.3.30 Digital filter for Sigma-Delta Modulators (DFSDM) characteristics. . . . . . . . . . . . . . . . . . 143
6.3.31 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.3.32 PSSI interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
6.3.33 LCD-TFT controller (LTDC) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
6.3.34 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
6.3.35 Low-power timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
6.3.36 Communication interfaces. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
7 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
7.1 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
7.1.1 Device marking for LQFP64 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
7.2 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
7.2.1 Device marking for LQFP100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
7.3 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
7.3.1 Device marking for LQFP144 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
7.4 LQFP176 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
7.4.1 Device marking for LQFP176 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
7.5 UFBGA169 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
7.5.1 Device marking for UFBGA169 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
7.6 UFBGA(176+25) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
7.6.1 Device marking for UFBGA176+25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
7.7 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
7.7.1 Reference documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Important security notice . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
List of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
List of figures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203

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List of tables

List of tables
Table 1. STM32H7B0xB features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. System vs domain low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 3. Overview of low-power mode monitoring pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 4. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 5. USART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 6. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 7. STM32H7B0xB pin/ball definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 8. Port A alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 9. Port B alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 10. Port C alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 11. Port D alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 12. Port E alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 13. Port F alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 14. Port G alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 15. Port H alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 16. Port I alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 17. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 18. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 19. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 20. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 21. Maximum allowed clock frequencies. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 22. Supply voltage and maximum frequency configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 23. VCAP operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 24. Characteristics of SMPS step-down converter external components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 25. SMPS step-down converter characteristics for external usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 26. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 27. Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 28. Embedded reference voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 29. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 30. USB regulator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 31. Inrush current and inrush electric charge characteristics for LDO and SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 32. Typical and maximum current consumption in Run mode, code with data processing running from ITCM, regulator
ON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 33. Typical and maximum current consumption in Run mode, code with data processing running from flash memory,
cache ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 34. Typical and maximum current consumption in Run mode, code with data processing running from flash memory,
cache OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 35. Typical consumption in Run mode and corresponding performance versus code position . . . . . . . . . . . . . . . . . 80
Table 36. Typical current consumption in Autonomous mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 37. Typical current consumption in Sleep mode, regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 38. Typical current consumption in System Stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 39. Typical current consumption RAM shutoff in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 40. Typical and maximum current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 41. Typical and maximum current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 42. Peripheral current consumption in Run mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 43. Peripheral current consumption in Stop, Standby and VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 44. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 45. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 46. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 47. 4-50 MHz HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 48. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 49. HSI48 oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 50. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

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Table 51. CSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

Table 52. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 53. PLL characteristics (wide VCO frequency range) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 54. PLL characteristics (medium VCO frequency range). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 55. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 56. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 57. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 58. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 59. EMI characteristics for fHSE = 8 MHz and fHCLK = 64 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 60. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 61. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 62. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 63. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 64. Output voltage characteristics for all I/Os except PC13, PC14, PC15 and PI8 . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 65. Output voltage characteristics for PC13, PC14, PC15 and PI8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 66. Output timing characteristics (HSLV OFF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 67. Output timing characteristics (HSLV ON). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 68. Pxy_C and Pxy analog switch characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 69. NRST pin characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 70. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 71. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 72. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . .110
Table 74. Asynchronous multiplexed PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .110
Table 75. Asynchronous multiplexed PSRAM/NOR read - NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .111
Table 76. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .111
Table 77. Asynchronous multiplexed PSRAM/NOR write - NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .112
Table 78. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113
Table 79. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .114
Table 80. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .116
Table 81. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .117
Table 82. Switching characteristics for NAND flash memory read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 83. Switching characteristics for NAND flash write cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 84. SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 85. LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 86. SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 87. LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 88. OCTOSPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 89. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 90. Delay Block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 91. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 92. Minimum sampling time vs RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 93. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 94. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 95. DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 96. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 97. Analog temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 98. Analog temperature sensor calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 99. Digital temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 100. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 101. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 102. Temperature monitoring characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 103. Voltage booster for analog switch characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 104. COMP characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 105. Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141

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Table 106. DFSDM measured timing 1.62-3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143

Table 107. DCMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 108. PSSI transmit characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 109. PSSI receive characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 110. LTDC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 111. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 112. LPTIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 113. Minimum i2c_ker_ck frequency in all I2C modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 114. I2C analog filter characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 115. USART characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 116. SPI dynamic characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Table 117. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 118. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 119. MDIO Slave timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Table 120. Dynamics characteristics: SDMMC characteristics, VDD=2.7 to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Table 121. Dynamics characteristics: eMMC characteristics VDD=1.71V to 1.9V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Table 122. Dynamics characteristics: USB OTG_FS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 123. Dynamics characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 124. Dynamics JTAG characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 125. Dynamics SWD characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 126. LQFP64 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Table 127. LQFP100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Table 128. LQFP144 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Table 129. LQFP176 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Table 130. UFBGA169 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Table 131. UFBGA169 - recommended PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Table 132. UFBGA(176+25) - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Table 133. UFBGA(176+25) - Recommended PCB design rules (0.65 mm pitch BGA) . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 134. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 135. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

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 STM32H7B0xB
List of figures

List of figures
Figure 1. STM32H7B0xB block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 2. Power-up/power-down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 3. STM32H7B0xB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 4. LQFP64 (STM32H7B0xB without SMPS) pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 5. LQFP100 (STM32H7B0xB without SMPS) pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 6. LQFP144 (STM32H7B0xB without SMPS) pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 7. LQFP176 (STM32H7B0xB without SMPS) pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 8. UFBGA169 (STM32H7B0xB with SMPS) ballout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 9. UFBGA176+25 (STM32H7B0xB with SMPS) ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 10. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 11. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 12. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 13. Current consumption measurement scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Figure 14. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Figure 15. SMPS efficicency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode, TJ = 30 °C. . . . . . . . . 71
Figure 16. SMPS efficiency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode, TJ = 130 °C . . . . . . . . 71
Figure 17. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5), TJ = 30 °C . . 72
Figure 18. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5), TJ = 130 °C . 72
Figure 19. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5), TJ = 30 °C . 73
Figure 20. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5), TJ = 130 °C. 73
Figure 21. High-speed external clock source AC timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Figure 22. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 23. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 24. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 25. VIL/VIH for all I/Os except BOOT0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Figure 26. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Figure 27. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 28. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Figure 29. Asynchronous multiplexed PSRAM/NOR read waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .110
Figure 30. Synchronous multiplexed NOR/PSRAM read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113
Figure 31. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .114
Figure 32. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .116
Figure 33. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .117
Figure 34. NAND controller waveforms for read access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .118
Figure 35. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .119
Figure 36. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .119
Figure 37. NAND controller waveforms for common memory write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 38. SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 39. SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 40. OctoSPI timing diagram - SDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Figure 41. OctoSPI timing diagram - DTR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 42. OctoSPI Hyperbus clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 43. OctoSPI Hyperbus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 44. OctoSPI Hyperbus write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 45. ADC conversion timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Figure 46. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 47. Typical connection diagram using the ADC with FT/TT pins featuring analog switch function. . . . . . . . . . . . . 133
Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 50. 12-bit buffered /non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 51. Channel transceiver timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 52. DCMI timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146

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 STM32H7B0xB
List of figures

Figure 53. PSSI timing diagram in Transmit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

Figure 54. PSSI timing diagram in Receive mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 55. LCD-TFT horizontal timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 56. LCD-TFT vertical timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 57. USART timing diagram in Master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 58. USART timing diagram in Slave mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Figure 59. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 60. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 61. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 62. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 63. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 64. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Figure 65. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Figure 66. MDIO Slave timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 67. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 68. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 69. DDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 70. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 71. JTAG timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 72. SWD timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 73. LQFP64 - Outline(15.). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 74. LQFP64 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Figure 75. LQFP64 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 76. LQFP100 - Outline(15.) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 77. LQFP100 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 78. LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 79. LQFP144 - Outline(15.) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Figure 80. LQFP144 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Figure 81. LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Figure 82. LQFP176 - Outline(15.) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Figure 83. LQFP176 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Figure 84. LQFP176 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 85. UFBGA169 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 86. UFBGA169 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 87. UFBGA169 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Figure 88. UFBGA(176+25) - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 89. UFBGA(176+25) - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 90. UFBGA176+25 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189

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 STM32H7B0xB

IMPORTANT NOTICE – READ CAREFULLY

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DS13196 - Rev 7 page 205/205