Advance Technical Information

X2-Class IXTH48N65X2 VDSS = 650V

Power MOSFET ID25 = 48A
RDS(on)  68m

N-Channel Enhancement Mode

Avalanche Rated
TO-247

G
Symbol Test Conditions Maximum Ratings D
S D (Tab)
VDSS TJ = 25C to 150C 650 V
VDGR TJ = 25C to 150C, RGS = 1M 650 V G = Gate D = Drain
S = Source Tab = Drain
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC = 25C 48 A
IDM TC = 25C, Pulse Width Limited by TJM 96 A
IA TC = 25C 10 A
EAS TC = 25C 500 mJ
Features
dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns
PD TC = 25C 660 W 
International Standard Package
TJ -55 ... +150 C 
Low RDS(ON) and QG
TJM 150 C

Avalanche Rated

Low Package Inductance
Tstg -55 ... +150 C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C Advantages

Md Mounting Torque 1.13 / 10 Nm/lb.in 

High Power Density
Weight 6 g

Easy to Mount

Space Savings

Applications
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

Switch-Mode and Resonant-Mode
Power Supplies
BVDSS VGS = 0V, ID = 1mA 650 V 
DC-DC Converters

PFC Circuits
VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V 
AC and DC Motor Drives
IGSS VGS = 30V, VDS = 0V 100 nA

Robotics and Servo Controls

IDSS VDS = VDSS, VGS = 0V 25 A

TJ = 125C 500 A

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 68 m

© 2015 IXYS CORPORATION, All Rights Reserved DS100676(8/15)

 IXTH48N65X2
Symbol Test Conditions Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max D A
A B + 0K M D B M
0P O
A2
A2 E
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 18 30 S Q
S D2
R + +

RGi Gate Input Resistance 1.0  D

D1
0P1
4
Ciss 4420 pF 1 2 3
ixys option
L1
Coss VGS = 0V, VDS = 25V, f = 1MHz 2920 pF C
E1

Crss 8 pF L

td(on) 29 ns
Resistive Switching Times A1
c
b
b2
tr 16 ns b4
PINS: 1 - Gate
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 e
2, 4 - Drain
td(off) 56 ns + J M C AM
O

RG = 3 (External) 3 - Source
tf 6 ns
Qg(on) 77 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 nC
Qgd 23 nC
RthJC 0.19 C/W
RthCS 0.21 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
IS VGS = 0V 48 A

ISM Repetitive, pulse Width Limited by TJM 192 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr IF = 24A, -di/dt = 100A/μs 400 ns

QRM 6.8 μC
VR = 100V
IRM 26 A

Note 1. Pulse test, t  300s, duty cycle, d 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
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