CHAPTER TWO

MATCHING NETWORKS
AND
SIGNAL FLOW GRAPHS
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO Monday, December 16, 2024 1
INTRODUCTION:
• The analysis of transmission – line problems and of the matching
circuits at microwave frequencies can be cumbersome/bulky in
analytical form.
• The smith chart provides a very useful graphical aid to the analysis of
these problems.
• The smith chart is basically a plot of all passive impedances in a
reflection coefficient chart of unit radius.
• The reading accuracy from the smith chart is sufficient for most
practical microwave transistor amplifier design problems.
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 Cont …
• Matching circuits that provide optimum performance in a microwave
amplifier can be easily and quickly designed using the normalized
impedance and admittance Smith chart.
• The Smith chart is also used to present the frequency dependence of
scattering parameters and other amplifier characteristics.
• The characteristics of microstrip transmission lines are presented in this
chapter.
• The mode of propagation in a microstrip line is assumed to be quasi –
transverse electromagnetic
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 Cont …
• Although radiation losses in microstrip line can be severe, the use of a
thin material, having a high dielectric constant, between the top strip
conductor and the ground plane of a microstrip line reduces the
radiation losses to a minimum.
• Microstrip lines find extensive use as passive circuit element and as a
medium in which the complete microwave amplifier can be built.
• The interconnection features of the microstrip line are unsurpassed.
• Transistors in a chip or packaged form can be easily attached to the strip
conductors of the microstrip line.
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 Cont …
• Some practical circuit construction techniques using microstrips are
presented.
• In this chapter signal flow graphs are discussed.
• The description of two – port networks in terms of S parameters permits the
use of signal flow graphs in the analysis of microwave amplifiers.
• Power – gain expressions, as well as other relations, are derived using signal
flow graphs.
• And also, the power – gain expressions are derived using direct manipulations
of the traveling wave relations.
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 THE SMITH CHART
• The Smith chart is the representation in the reflection coefficient plane,
called Γ – plane, of the relation:
𝑍 − 𝑍𝑜
Γ= 1
𝑍 + 𝑍𝑜
For all values of 𝑍, such that 𝑅𝑒 𝑍 ≥ 0.
• 𝑍𝑜 is the characteristic impedance of the transmission line or a reference
impedance value.
• Defining the normalizing impedance 𝑧 as:
𝑍 𝑅 + 𝑗𝑋
𝑧= = = 𝑟 + 𝑗𝑥
𝑍𝑜 𝑍𝑜 6
• We can write equation (1) in the form: Cont …
𝑧−1
Γ= 2
𝑧+1
• Figure 2.1a illustrates the properties of the transformation of equation (2)
for some values of 𝑧.
For example, if 𝑍 = 50𝛺 and 𝑍𝑜 = 50𝛺, then 𝑧 = 1 and Γ = 0.
• That is, the point 𝑧 = 1 in the normalized 𝑧 plane maps into the origin of
the Γ plane.
• From equation (2) it also follows that the point 𝑧 = 0 maps into the point
𝛤 = −1 (i.e.,𝑈 = −1 and 𝑉 = 0).
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 Cont …
• Next we consider the mapping of normalized impedances having
constant real and imaginary parts.
• For example, for 𝑧 = 1 + 𝑗𝑥 the corresponding values of Γ are:
Γ=0 𝑓𝑜𝑟 𝑥 = 0
𝑗𝑥 Γ = 0.447ൻ±63.43𝑜 𝑓𝑜𝑟 𝑥 = ±1
Γ= 𝑜𝑟
2 + 𝑗𝑥 Γ = 0.707ൻ±45𝑜 𝑓𝑜𝑟 𝑥 = ±2
𝑒𝑡𝑐
• The mapping of the various points along 𝑧 = 1 + 𝑗𝑥 is shown in Fig.
2.1(𝑎). Monday, December 16,
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 Cont …
• In fact, we will show that the mapping is circle of radius 1Τ2 centered at
𝑈 = 1Τ2 and 𝑉 = 0.
• Since this circle represents the mapping of all points with 𝑟 = 1, the
circle is known as the constant resistance circle for 𝑟 = 1.
• From equation (2) it follows that the imaginary axis (i.e., 𝑧 = 0 + 𝑗𝑥)
maps into the unit circle given by Γ = 1.
• Therefore, all passive impedances – that is, impedances having 𝑟 ≥ 0 –
maps inside the unit circle (i.e., Γ ≤ 1) in the Γ plane.

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 Cont …
• Figure 2.1(𝑎) also shows the mapping of 𝑧 = 𝑟 + 𝑗1 (𝑟 ≥ 0) (i.e., a
straight line having a constant imaginary value of one).
• For 𝑧 = 𝑟 + 𝑗1 (𝑟 ≥ 0) it follows that the corresponding values of
Γ lie along a portion of a circle inside Γ ≤ 1 having radius 1, centered
at 𝑈 = 1 and 𝑉 = 1.
• This circle is known as the constant reactance circle for 𝑥 = 1.
• The portion of the circle outside the Smith chart corresponds to the
mapping of 𝑧 = 𝑟 + 𝑗1 for 𝑟 < 0 (i.e., for negative resistance).

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 Cont …
• The transformation of equation (2) can be analysed in general as follows. Let:
𝑟 − 1 + 𝑗𝑥
Γ = 𝑈 + 𝑗𝑉 =
𝑟 + 1 + 𝑗𝑥
• Then rationalize and separate the real and imaginary parts to obtain:
𝑟2 − 1 + 𝑥2
𝑈= 2 2
3
𝑟+1 +𝑥
and
2𝑥
𝑈= 4
𝑟 + 1 2 + 𝑥2
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 Cont …
• Eliminating 𝑥 from equations (3) and (4) results in:
2 2
𝑟 1
𝑈− + 𝑉2 =
𝑟+1 𝑟+1
• Which is the equation of a family of circles centered at 𝑈 = 𝑟Τ 𝑟 + 1
and 𝑉 = 0, with radii 1Τ 𝑟 + 1 .
• The constant resistance circles for 𝑟 = 0, 0.5, 1 and 3 are shown in
Figure 2.1(b).

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 Monday, December 16,
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• Observe that in Fig. 2.1(𝑏) the constant resistance circles in the Γ plane are.
labeled according to the constant resistance values (i.e., the value of 𝑟 in the 𝑧
plane).
• Eliminating 𝑟 from equations (3) and (4) results in:
2 2
2
1 1
𝑈−1 + 𝑉− =
𝑥 𝑥
• Which is the equation of a family of circles centered at 𝑈 = 1 and 𝑉 =
1Τ𝑥, with radii 1Τ𝑥.
• The portion of constant reactance circles for:
𝑥 = −3, −1, −0.5, 0, 0.5, 1, 3
(with 𝑟 ≥ 0) is shown in Figure 2.1𝑐. Monday, December 16,
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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 16
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 Cont …
• There is a one – to – one correspondence between points in the 𝑧 plane
and the points in the Γ plane.
• The plot of the constant – resistance and constant – reactance circles
for all values of 𝑧 such that 𝑅𝑒[𝑧] ≥ 0 in a graph is known as the
Smith chart.
• The smith chart is shown in Figure 2.2.
• Observe that the upper half of the chart represents normalized
impedances having a positive reactance (i.e., 𝑥 is positive) and the lower
half represents negative reactances (i.e., 𝑥 is negative).
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 Cont …
• The Smith chart can also be used as an admittance chart.
• The appropriate transformation in this case is:
′
𝑦−1
Γ =
𝑦+1
• Where the normalized admittance is 𝑦 = 𝑌Τ𝑌0 .
• 𝑌0 is the characteristic admittance of the transmission line or a reference
admittance value.
• Since 𝑧 = 1Τ𝑦, it follows that Γ and Γ ′ are related by:
Γ ′ = −Γ or Γ ′ = Γ𝑒 𝑗𝜋 Monday, December 16,
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• In the admittance chart, since: Cont …
𝑌 𝐺 + 𝑗𝐵
𝑦= = = 𝑔 + 𝑗𝑏
𝑌𝑜 𝑌𝑜
• The previous constant – resistance (𝑟) circles become constant –
conductance 𝑔 circles and the constant – reactance (𝑥) circles become
constant – susceptance (𝑏) circles.
• Observe that the upper half of the chart represents normalized admittances
having a positive susceptance (i.e, 𝑏 is positive) and the lower half represents
negative susceptance (i.e, 𝑏 is negative) .
• When needed for clarity, we will call a Smith chart used as an impedance char
a “𝑍 Smith chart”, and a Smith chart used as an admittance chart a “𝑌 Smith
chart”. 20
Example 1:
• Locate in the Smith chart the following normalized impedances and
admittances:
𝑧1 = 1 + 𝑗1, 𝑧2 = 0.4 + 𝑗0.5, 𝑧3 = 3 − 𝑗3, 𝑧4 = 0.2 − 𝑗0.6,
𝑧5 = 0
𝑦1 = 1 + 𝑗1, 𝑦2 = 0.4 + 𝑗0.5, 𝑦3 = 2 − 𝑗1.4, 𝑦4 = 0.5 − 𝑗0.2,
𝑦5 = ∞
Solution:
• The values of 𝑧′𝑠 and 𝑦′𝑠 are shown in Figure 2.3.
• The Smith chart in Figure 2.3(𝑎) is obviously used as a 𝑍 Smith chart, and
that in Fig. 2.3(𝑏) as a 𝑌 Smith chart. Monday, December 16,
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 Cont …
• The conversion of a normalized impedance to a normalized admittance
can be done easily in the Smith chart.
• Since from equation (2)
1+Γ
𝑧=
1−Γ
and
1 1−Γ
𝑦= =
𝑧 1+Γ
• We observe that rotating Γ by 𝑒 𝑗𝜋 we obtain a new value of 𝑧 (denoted
by 𝑧′ ).
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 Cont …
• 𝑧′ given by:
1 + Γ𝑒 𝑗𝜋 1 − Γ
𝑧′= 𝑗𝜋
=
1 − Γ𝑒 1+Γ
• Which is identical to the value of the admittance 𝑦.
• In other words, the numerical value of the impedance 𝑧′ is identical to
the value of the admittance:
𝑦 = 1Τ𝑧

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Example 2:
• Find 𝑦 for 𝑧 = 1 + 𝑗1 using the Smith chart.
Solution:
• Locate the point 𝑧 = 1 + 𝑗1 in Fig. 2.4.
• Associated with 𝑧 there is a value of Γ.
• Rotating Γ by 180𝑜 (i.e., 𝑒 𝑗𝜋 ) results in the point 𝑧′, whose numerical
value is that of 𝑦.
• The value of 𝑦 is read as 0.5 − 𝑗0.5, which of course agree with:
1 1
𝑦= = = 0.5 − 𝑗0.5
𝑧 1 + 𝑗1 Monday, December 16,
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 Cont …
• Impedances having a negative real part will have a reflection coefficient
whose magnitude is greater than 1.
• These impedances, therefore, map outside the Smith chart.
• Fig. 2.5 shows a chart (known as the compressed Smith chart) that
includes the Smith chart (i.e., Γ ≤ 1) plus a portion of the negative
impedance region.
• An alternative way of handling negative resistances (i.e., Γ > 1) is to
plot in the Smith chart 1ΤΓ ∗ and take the value of the resistance circles
as being negative and the reactance circles as labeled.
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Example 3:
• Find the impedance whose reflection coefficient is 2.236ൻ26.56𝑜 .
Solution: If we plot in the Smith Chart shown in Fig. 2.6 the quantity
1 𝑜
= 0.447ൻ26.56
Γ∗
• The resulting 𝑧 is −2 + 𝑗1.
• Of course, from equation (2),
−2 + 𝑗1 − 1
Γ= = 2.236ൻ26.56𝑜
−2 + 𝑗1 + 1
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 Cont …
• The use of the Smith chart in a transmission – line calculation follows
from equations (53), (56) and (57) in Chapter 1.
• With 𝑧 = 𝑍Τ𝑍𝑜 , we can conveniently write these equations in the form:
𝑧−1
Γ𝑜 = 5
𝑧+1
Γ𝐼𝑁 𝑑 = Γ𝑜 𝑒 −2𝑗𝛽𝑑 6
1 + Γ𝐼𝑁 𝑑
𝑍𝐼𝑁 𝑑 = 7
1 − Γ𝐼𝑁 𝑑

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 Cont …
• A typical transmission – line input impedance calculation involves the
following steps:
1) Locate Γ𝑜 in the 𝑍 Smith chart for a given 𝑧 = 𝑍𝐿 Τ𝑍𝑜 [i.e.,
equation (5)].
2) Rotate Γ𝑜 by −2𝛽𝑑 to obtain Γ𝐼𝑁 𝑑 [i.e., equation (6)].
Observe that the rotation is along a vector of constant
magnitude – namely, Γ𝑜 = Γ𝐼𝑁 𝑑
3) Read the value of the normalized Γ𝐼𝑁 𝑑 associated with
Γ𝐼𝑁 𝑑 [i.e., equation (7)]
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Example 4:
• Find the input impedance, the load reflection coefficient, and the
𝑉𝑆𝑊𝑅 in a transmission line having an electrical length of 45𝑜 ,
characteristic impedance of 50𝛺, and terminated in a load 𝑍𝐿 = 50 +
𝑗50𝛺.
Solution:
• The transmission – line is shown in Fig. 2.7(𝑎), where:
𝑧 = 𝑍𝐿 Τ𝑍𝑜 = 1 + 𝑗1
and
𝛽𝑑 = 2𝜋𝑑 Τλ = 𝜋Τ4 𝑜𝑟 𝑑 = λΤ8 = 0.125λ
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 Cont …
• In Fig. 2.7(𝑏) , the point 𝑧𝐿 = 1 + 𝑗1 is located and the vector
representing Γ𝑜 .
• To find 𝑍𝐼𝑁 , we rotate along a constant Γ radius a distance of −90𝑜
(i.e.,−2𝛽𝑑) – that is, from 63.4𝑜 to −26.6𝑜 .
• The input impedance is read directly from the Smith chart as 𝑍𝐼𝑁 = 2 −
𝑗1 or 𝑍𝐼𝑁 λΤ8 = 100 − 𝑗50Ω.
• The magnitude and phase of Γ𝑜 are read as indicated in Fig. 2.7(𝑏).
• Observe the linear scale for the magnitude of the reflection coefficient.
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 Cont …
• The distance from the origin to 𝑧𝐿 can be measured with a ruler or
compass and superimposed on the linear scale.
• The reading of Γ𝑜 gives Γ𝑜 = 0.447ൻ63.40 .
• Finally, the 𝑉𝑆𝑊𝑅 can be calculated from equation (62)
𝑉 𝑑 𝑚𝑎𝑥 1 + Γ𝑜
𝑉𝑆𝑊𝑅 = = 62
𝑉 𝑑 𝑚𝑖𝑛 1 − Γ𝑜
• Or the distance from the origin to 𝑧𝐿 can be measured and
superimposed on the 𝑉𝑆𝑊𝑅 scale.
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 Cont …
• The value obtained is 2.62.
• It can also be shown that the value of the maximum resistance in the
line is numerically equal to the 𝑉𝑆𝑊𝑅.
• This value is included in Fig. 2.7(𝑏) as 𝑉𝑆𝑊𝑅 = 𝑟𝑚𝑎𝑥 = 2.62.

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Example 5:
a) Determine the length 𝑙 of the 50Ω short – circuited transmission line
shown in Figure 2.8(𝑎) so that the input impedance is 𝑍𝐼𝑁 𝑙 =
𝑗100𝛺.
b) Determine the length 𝑙 of the 50Ω open – circuited transmission line
shown in Figure 2.8(𝑏) so that the input impedance is 𝑍𝐼𝑁 𝑙 =
𝑗100𝛺.

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 Cont …
Solution:
a) In the short – circuited transmission line, 𝑧𝐿 = 0. From Fig. 2.8(𝑎),
the length required to transform the load impedance 𝑧𝐿 = 0 to the
input impedance 𝑧𝐼𝑁 𝑙 = 𝑗100Τ50 = 𝑗2 is 𝑙 = 0.176𝜆.
Observe that in the short – circuited line the motion is along the edge of
the chart (since Γ = 1 in a short circuited – line).
• The length could have been calculated using equation (63). That is,
𝑍𝑆𝐶 = 𝑗𝑍𝑜 tan 𝛽𝑑 63
𝑍𝐼𝑁 𝑙 = 𝑗100 = 𝑗50 tan 𝛽𝑙
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 Cont …
• Which gives:
tan 𝛽𝑙 = 2 𝑜𝑟 𝛽𝑙 = 63.43𝑜 = 0.352𝜋
• Then:
0.352𝜋𝜆
𝑙= = 0.176𝜆
2𝜋

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 Cont …
b) In the open – circuited transmission line, 𝑧𝐿 = ∞.
Therefore, from Fig. 2.8(𝑏) , the length 𝑙 is 0.426𝜆 [i.e., 0.5𝜆 −
0.25𝜆 + 0.176𝜆 = 0.426𝜆].
• In many cases it is convenient to make transmission – line calculations
using the 𝑌 Smith chart.
• The following two examples illustrate some transmission – line
calculations using the 𝑌 Smith chart.

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Example 6:
a) Determine the input admittance of a short – circuited transmission –
line having a length of 𝜆Τ8 and 𝑌𝑜 = 1Τ𝑍𝑜 = 20𝑚𝑆.
b) Determine the input admittance of an open – circuited transmission –
line having a length 𝜆Τ8 and 𝑌𝑜 = 1Τ𝑍𝑜 = 20𝑚𝑆.
Solution:
a) For the short – circuited line, the load admittance is 𝑦𝐿 = ∞.
Plotting 𝑦𝐿 in the 𝑌 Smith chart shown in Fig. 2.9(𝑎) and rotating along
the constant gamma circle Γ = 1 a distance 𝜆Τ8, we obtain 𝑦𝐼𝑁 𝑙 = −𝑗
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Or Cont …
𝑌𝐼𝑁 𝑙 = 𝑦𝐼𝑁 𝑙 𝑌𝑜 = −𝑗 20 ∗ 10−3 = −𝑗20𝑚𝑆
• The input impedance is:
𝑍𝐼𝑁 𝑙 = 1Τ𝑌𝐼𝑁 𝑙 = 𝑗50Ω
b) In the open – circuited line, the load admittance is 𝑦𝐿 = 0.
Therefore, as shown in Fig. 2.9(𝑏), at 𝑙 = 𝜆Τ8 we obtain 𝑦𝐼𝑁 𝑙 = 𝑗
Or
𝑌𝐼𝑁 𝑙 = 𝑦𝐼𝑁 𝑙 𝑌𝑜 = 𝑗 20 ∗ 10−3 = 𝑗20𝑚𝑆
• The input impedance is 𝑍𝐼𝑁 𝑙 = 1Τ𝑌𝐼𝑁 𝑙 = −𝑗50Ω.
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Example 7:
• Solve Example 4 using a 𝑌 Smith chart.
Solution:
• Referring to Fig. 2.7(𝑎), the admittance associated with the load 𝑧𝐿 =
𝑍𝐿 Τ𝑍𝑜 = 1 + 𝑗1 can be obtained by rotating Γ𝑜 by 180𝑜 in Fig. 2.7(𝑏)
to obtain 𝑦𝐿 = 0.5 − 𝑗0.5.
• The load 𝑦𝐿 is shown in Fig. 2.10.
• At 𝑦𝐿 , the “wavelengths toward generator” scale reads 0.412𝜆.
• Adding 0.125𝜆 to 0.412𝜆 results in the input being located at 0.537𝜆.
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 Cont …
• Since the wavelength scale repeats every 𝜆Τ2, it follows that 0.537𝜆 is
equivalent to 0.037𝜆.
• The motion from 𝑦𝐿 to 𝑦𝐼𝑁 𝜆Τ8 along a constant Γ circle is shown in
Fig. 2.10.
• The value of 𝑦𝐼𝑁 𝑙 is read from the 𝑌 Smith chart to be 0.4 + 𝑗0.2 or
𝑌𝐼𝑁 𝑙 = 8 + 𝑗4 𝑚𝑆.
• Comparing with Example 2.4, we observe that 𝑦𝐼𝑁 𝑙 = 0.4 + 𝑗0.2 is
the admittance associated with 𝑧𝐼𝑁 𝑙 = 1Τ𝑦𝐼𝑁 𝑙 = 2 − 𝑗1 , and
therefore 𝑍𝐼𝑁 𝑙 = 100 − 𝑗50𝛺, as expected.
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 THE NORMALIZED IMPEDANCE AND
ADMITTANCE SMITH CHART
• The impedance – to – admittance conversion can also be obtained by
superimposing two Smith charts and rotating one of the chart by 108𝑜 .
• The rotated chart represents admittances and the other chart represents
impedances.
• The superimposition of the original and the rotated chart is known as
the normalized impedance and admittance Smith chart.
• We will refer to this Smith chart as the 𝑍𝑌 Smith chart.
• The 𝑍𝑌 Smith chart is shown in Fig. 2.11.
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 Monday, December 16,
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 Cont …
• On the left edge of the 𝑍𝑌 Smith chart, one finds the symbols +𝑋𝑠 and
− 𝑋𝑠 to remind us that when using impedance values (the original
chart), the reactances are positive in the upper half of the chart and
negative in the lower half.
• On the right edge of the 𝑍𝑌 Smith chart, one finds +𝐵𝑝 and −𝐵𝑝 to
remind us that when using the admittance values (i.e., the rotated curve),
the susceptance's are negative in the upper half of the chart and positive
in the lower half.
• In the ZY Smith chart, for a given value of 𝑧 the associated value of 𝑦 is
read directly from the admittance coordinates, and vice versa. 52
Example 8:
• Find 𝑦 for 𝑧 = 1 + 𝑗1 using 𝑍𝑌 Smith chart.
Solution:
• We can locate in the 𝑍𝑌 Smith chart in Fig. 2.11 the point 𝑧 = 1 + 𝑗1
(original curves) and read directly from the rotated curves the value:
𝑦 = 0.5 + 𝑗0.5
• The various Smith charts can be used to represent the frequency
response of circuits, or from the frequency response of a circuit in the
Smith chart an equivalent circuit model can be developed.
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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 53
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 Cont …
• The simplest frequency responses that can be represented in the Smith
chart are those of a series 𝑅𝐿 circuit, a series 𝑅𝐶 circuit, a parallel 𝑅𝐿
circuit, and a parallel 𝑅𝐶 circuit.
• In a series 𝑅𝐿 circuit, the normalized impedance is:
𝑍 𝑅 + 𝑗𝜔𝐿
𝑧= = = 𝑟 + 𝑗𝑥
𝑍𝑜 𝑍𝑜
• As the frequency increases from 𝑓𝑎 𝑡𝑜 𝑓𝑏 , the plot of the normalized
impedance 𝑧 follows a constant 𝑟 circle with the reactance increasing
linearly as a function of frequency.
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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 54
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 Cont …
• Such as the typical plot for the series 𝑅𝐿 circuit shown in Fig. 2.12(𝑎)
where 𝑟 = 0.2𝛺 and the reactance increases from 𝑗0.24 at 𝑓𝑎 to 𝑗0.5
at 𝑓𝑏 .
• In a series 𝑅𝐿 circuit, the reactance must change linearly with frequency.
• The effect of adding a parallel capacitor to a series 𝑅𝐿 circuit is also
shown in Fig. 2.12(𝑎).
• It is obvious that the admittance of the capacitor (i.e., 𝑦 = 𝑗𝑏 =
𝑗𝜔𝐶 Τ𝑌𝑜 ) adds to the admittance of the series 𝑅𝐿 circuit.

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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 56
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 Cont …
• For the series 𝑅𝐿 circuit with a capacitor 𝐶 in parallel in Fig. 2.12(𝑎), it
is seen that at 𝑓𝑏 the susceptance of the capacitor (i.e., 𝑗0.9) adds to the
susceptance of the series 𝑅𝐿 circuit (i.e.,−𝑗1.7) to produce a series
susceptance of −𝑗0.8.
• Hence, the susceptance of the capacitor is 𝑗0.9 and at 𝑓𝑏 the admittance
of the circuit is 𝑦 = 0.7 − 𝑗0.8.
• At 𝑓𝑎 , the susceptance of the capacitor is such that the admittance of
the circuit is 𝑦 = 2 − 𝑗1.4.
• In Fig. 2.12(𝑎), typical impedance plots for a series 𝑅𝐶 circuit and a
series 𝑅𝐶 circuit with an inductor in parallel are also shown. 57
 Cont …
• In Fig. 2.12(𝑏), the admittance plots of parallel 𝑅𝐿 and parallel 𝑅𝐶
circuits are shown, as well as the effects of adding a series 𝐶 to the
parallel 𝑅𝐿 circuit and a series 𝐿 to the parallel 𝑅𝐶 circuit.

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59
Example 9:
• The frequency response of the normalized impedance (with 𝑍𝑜 = 50Ω)
of a one port network is shown in Fig. 2.13(𝑎) as the frequency varies
from 500𝑀𝐻𝑧 to 1𝐺𝐻𝑧.
• Determine an equivalent circuit for the one port network and the
element values.
Solution:
• Since the frequency response follows a constant resistance circle of 𝑟 =
0.4 and the reactance increases linearly with frequency, it follows that a
series 𝑅𝐿 circuit simulates the behaviour shown in Fig. 2.13(𝑎).
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 Monday, December 16,
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 Cont …
• The value of 𝑅, with 𝑍𝑜 = 50Ω, is 𝑅 = 𝑟𝑍𝑜 = 0.4 50 = 20Ω.
• The value of 𝐿 follows from:
𝑗𝜔𝑏 𝐿 𝑗𝜔𝑎 𝐿
− = 𝑗0.4 − 𝑗0.2 = 𝑗0.2
𝑍𝑜 𝑍𝑜
Or
0.4 − 0.2 0.2
𝐿 = 50 ∗ = 50 ∗ 9 6
= 3.18𝑛𝐻
𝜔𝑏 − 𝜔𝑎 2𝜋 1 ∗ 10 − 500 ∗ 10

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 IMPEDANCE MATCHING NETWORKS
• The need for matching networks arise because amplifiers, in order to
deliver maximum power to a load or to perform in a certain desired way,
must be properly terminated at both the input and the output ports.
• Figure 2.14 illustrates a typical situation in which a transistor, in order to
deliver maximum power to the 50Ω load, must have the terminations 𝑍𝑠
and 𝑍𝐿 .

Monday, December 16,

63
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 Cont …
• The input matching network is designed to transform the generator
impedance (shown as 50Ω) to the source impedance 𝑍𝑆 , and the output
matching network transforms the 50Ω termination to the load
impedance 𝑍𝐿 .
• Although many different types of matching networks can be designed,
the eight 𝐸𝐼𝐼 sections (also denoted as 𝐿 sections) shown in Figure 2.15
are not only simple to design but quite practical.
• The matching networks are lossless in order not to dissipate any of the
signal power.
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 65
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 Cont …
• The 𝑍𝑌 Smith chart can be used conveniently in the design of matching
networks.
• The effect of adding a series reactance element to an impedance or a
parallel susceptance element to an admittance, in the 𝑍𝑌 Smith chart, is
illustrated in the following example.

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Example 10:
a) Illustrate the effect of adding a series inductor 𝐿 𝑧𝐿 = 𝑗0.8 to an
impedance 𝑧 0.3 − 𝑗0.3 in the 𝑍𝑌 Smith chart.
Solution:
• Fig. 2.16 shows that the effect of adding a series inductance with 𝑧𝐿 =
𝑗0.8 is to move along a constant – resistance circle from a reactance
value of −0.3 to a reactance 0.5.
• In other words, the motion is in a clockwise direction along a constant –
resistance circle.

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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 68
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 Cont …
b) Illustrate the effect of adding a series capacitor 𝐶 𝑧𝐶 = −𝑗0.8 to an
impedance 𝑧 𝑧 = 0.3 − 𝑗0.3 in the 𝑍𝑌 Smith chart.
Solution:
• Figure 2.17 shows that the effect of adding a series capacitor with 𝑧𝐶 =
− 𝑗0.8 is to move along a constant – resistance circle from a reactance
value of −0.3 to a reactance of −1.1.
• In other words, the motion is in a counterclockwise direction along a
constant – resistance circle.

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 Monday, December 16,
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 Cont …
c) Illustrate the effect of adding a shunt inductor 𝐿 𝑦𝐿 = −𝑗2.4 to an
inductance 𝑦 𝑦 = 1.6 + 𝑗1.6 in the 𝑍𝑌 Smith chart.
Solution:
• Figure 2.18 shows that the effect of adding a shunt inductor with 𝑦𝐿 =
− 𝑗2.4 is to move along a constant – conductance circle from a
susceptance of 1.6 to susceptance of −0.8.
• In other words, the motion is in a counterclockwise direction along a
constant – conductance circle.

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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 72
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 Cont …
d) Illustrate the effect of adding a shunt capacitor 𝐶 𝑦𝐶 = 𝑗3.4 to an
admittance 𝑦 𝑦 = 1.6 + 𝑗1.6 in the 𝑍𝑌 Smith chart.
Solution:
• Figure 2.19 shows that the effect of adding a shunt capacitor with 𝑦𝐶 =
𝑗3.4 is to move along a constant – conductance circle from a
susceptance of 1.6 to a susceptance of 5.
• In other words, the motion is in a clockwise direction along a constant –
conductance circle.

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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 73
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 74
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• In conclusion, adding a series reactance produces a motion along a constant –.
resistance circle in the 𝑍𝑌 Smith chart, and adding shunt susceptance
produces a motion along a constant – conductance circle in the 𝑍𝑌 Smith
chart.
• The four types of motions are illustrated in Figure 2.20.
• Designing a matching network in the 𝑍𝑌 Smith chart consists of moving
along a constant – resistance or constant conductance circle from one value
of impedance or admittance to another.
• Each motion along a constant – resistance or constant – conductance circle
gives the value of an appropriate element.
• The following example illustrate the use of the 𝑍𝑌 Smith chart in the design
of matching networks. Monday, December 16,
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75
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 76
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Example 11:
• A load 𝑍𝐿𝑂𝐴𝐷 = 10 + 𝑗10Ω is to be matched to a 50Ω line. Design two
matching networks and specify the values of 𝐿 and 𝐶 at a frequency of
500 𝑀𝐻𝑧.
Solution:
• Selecting the series 𝐿 shunt 𝐶 network shown in Figure 2.21 (𝑎), the
matching network is designed as shown in Figure 2.21 (𝑏).
• The motion from point 𝐴 [i.e., 𝑧𝐿𝑂𝐴𝐷 = 10 + 𝑗10Ω Τ50Ω = 0.2 +
𝑗0.2] to point 𝐵 is along a constant – resistance circle, and we obtain for
the inductor impedance 𝑧𝐿 = 𝑗0.4 − 𝑗0.2 = 𝑗0.2.
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 Monday, December 16,
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 Monday, December 16,
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 Cont …
• Observe that point 𝐵 is along the unit constant – conductance circle.
• The admittance at point 𝐵 is 𝑦𝐵 = 1 − 𝑗2.
• The motion from point 𝐵 to point 𝐶 (i.e., the origin) is along a constant
– conductance circle, and we obtain the capacitor admittance 𝑦𝐶 = 0 −
−𝑗2 = 𝑗2 (or 𝑧𝐶 = 1Τ𝑗2 = −𝑗0.5).
• Therefore, at point 𝐶, 𝑦𝐼𝑁 = 𝑧𝐼𝑁 = 1 (or 𝑍𝐼𝑁 = 50Ω ) and the network
is matched to a 50Ω line.

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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 80
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 Cont …
• At 500 𝑀𝐻𝑧, the value of 𝐿 is:
10
𝐿= 6
= 3.18𝑛𝐻
2𝜋 500 ∗ 10
and the value of 𝐶 is:
1
𝐶= 6
= 12.74𝑝𝐹
25 2𝜋 500 ∗ 10
The matching network is at 500 𝑀𝐻𝑧 is shown in Figure 2.21 (𝑐) above.

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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 81
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 Cont …
• The second matching network is shown in Figure 2.22 (𝑎) below and
the 𝑍𝑌 Smith chart design in Figure 2.22 (𝑏) below.
• The motion from 𝐴 to 𝐵 in Figure 2.22 (𝑏) is along a constant –
resistance circle; therefore, the impedance of the series capacitor is:
𝑧𝐶 = −𝑗0.4 − 𝑗0.2 = −𝑗0.6
• The motion from 𝐵 to 𝐶 is along a constant – conductance circle;
therefore, the admittance of the shunt inductor is:
𝑦𝐿 = 0 − 𝑗2 = −𝑗2 𝑜𝑟 𝑧𝐿 = 1Τ −𝑗2 = 𝑗0.5
• The design at 500 𝑀𝐻𝑧 is shown in Figure 2.22 (𝑐). Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 82
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 Monday, December 16,
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 84
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Example 12:
• Design the matching network shown in Figure 2.23(𝑎) to transform a
50Ω load at the input to an admittance 𝑌𝑂𝑈𝑇 = 8 − 𝑗12 ∗ 10−3 𝑆 at
the output.
Solution:
• Figure 2.23(𝑏) illustrate a motion in the 𝑍𝑌 Smith chart from the origin
(i.e., 𝑧𝐿𝑂𝐴𝐷 = 50Τ50 = 1) to 𝑦𝑂𝑈𝑇 = 50 ∗ 8 − 𝑗12 ∗ 10−3 = 0.4 −
𝑗0.6 (see Figure 2.23(𝑏)).
• The motion from 𝐴 to 𝐵 produces a series capacitor having an
impedance of 𝑧𝐶 = −𝑗1.21.
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 86
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 87
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 Cont …
• The motion from 𝐵 to 𝐶 produces a shunt inductor having an
admittance of:
𝑦𝐿 = −𝑗0.6 − 𝑗0.49 = −𝑗1.09
Or
𝑧𝐿 = 1Τ −𝑗1.09 = 𝑗0.917
• The matching network is shown in Figure 2.23(𝑐) above.

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Example 13:
• Design a matching network to transform the load 𝑍𝐿𝑂𝐴𝐷 = 100 +
𝑗100Ω to an input impedance of 𝑍𝐼𝑁 = 50 + 𝑗20Ω.
Solution:
• Using a normalized value of 𝑍𝑜 = 100Ω, we have:
𝑧𝐿𝑂𝐴𝐷 = 𝑍𝐿𝑂𝐴𝐷 Τ𝑍𝑜 = 1 + 𝑗1 𝑎𝑛𝑑 𝑧𝐼𝑁 = 𝑍𝐼𝑁 Τ𝑍𝑜 = 0.5 + 𝑗0.2
• Figure 2.24(𝑎) shows one possible solution for the matching network.
• The motion from 𝐴 to 𝐵 is produced by a shunt capacitor whose
normalized admittance is:
𝑦𝐶 = 𝑗0.86 − −𝑗0.5 = 𝑗1.36 𝑜𝑟 𝑧𝐶 = 1Τ𝑦𝐶 = −𝑗0.735 89
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 90
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 Cont …
• Then, the impedance of the capacitor is:
𝑍𝐶 = 𝑍𝑜 𝑧𝐶 = 100 −𝑗0.735 = −𝑗7.35Ω
• The motion from 𝐵 to 𝐶 requires an inductor having normalized
impedance value of:
𝑧𝐿 = 𝑗0.2 − −𝑗0.87 = 𝑗1.07
• Then,
𝑍𝐿 = 𝑍𝑜 𝑧𝐿 = 100 𝑗1.07 = 𝑗107Ω
• The matching network is shown in Figure 2.24(𝑏)
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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 91
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 Cont …
• Sometimes a specific matching network cannot be used to accomplish a
given match.
• For example, any load impedance falling in the marked region in Figure
2.25(𝑎) cannot be matched to 50Ω with the network in Figure 2.25(𝑏)
because adding a series 𝐿 produces motion, in a clockwise direction,
away from any constant– conductance circle that passes through the
origin.
• Another observation regarding the 𝐸𝐼𝐼 matching networks is that only
those with an inductor and a capacitor can be used to provide a match
between a resistive load and an input resistance. Monday, December 16,
92
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 93
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• Q – Point/ Quiescent point/ Bias point: The operating point of a
device is the steady – state DC voltage or current at a specified terminal.
of an active device such as a transistor with no input signal applied.
• In a resonant circuit, the ratio of its resonant frequency 𝑓𝑜 to its
bandwidth (𝐵𝑊) is known as the loaded 𝑄 of the circuit.
• That is,
𝜔𝑜
𝑄𝐿 =
𝐵𝑊
• If the bandwidth is expressed in hertzs, we write:
𝑓𝑜
𝑄𝐿 = 64
𝐵𝑊
• The 𝐸𝐼𝐼 matching networks in Figure 2.15 above are used to provide a
match at a certain frequency. Monday, December 16,
94
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• The frequency response of an 𝐸𝐼𝐼 network can be classified as either a.
(two– pole) low– pass filter or a high– pass filter.
• At each node of the 𝐸𝐼𝐼 matching networks, there is an equivalent series
input impedance, denoted by 𝑅𝑠 + 𝑗𝑋𝑠 .
• Hence, a circuit node 𝑄, denoted by 𝑄𝑛 , can be defined at each node as:
𝑋𝑠
𝑄𝑛 = 65
𝑅𝑠
• If the equivalent parallel input admittance at the node is 𝐺𝑝 + 𝑗𝐵𝑝 , the
circuit node 𝑄 can be expressed in the form:
𝐵𝑠
𝑄𝑛 = 66 Monday, December 16,
𝐺𝑠 2024
95
• For example, the normalized series input impedance of the circuit in.
Figure 2.21(𝑎) (see Figure 2.21(𝑏), below) is 0.2 + 𝑗0.4; therefore,
the circuit node 𝑄 from equation (65), is:
𝑋𝑠 0.4
𝑄𝑛 = = =2
𝑅𝑠 0.2
• Also, using the Smith chart, the equivalent parallel admittance is readily
found to be 1 − 𝑗2, producing a circuit node 𝑄, according to equation
(66), of:
𝐵𝑠 2
𝑄𝑛 = = =2
𝐺𝑠 1
Which agrees with the result from equation (65). Monday, December 16,
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96
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 97
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 98
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 Cont …
• The circuit in Figure 2.21(𝑎) is re– drawn in Figure 2.26(𝑎).
• The circuit is excited with a source voltage having a 50Ω source
impedance (i.e., for a proper match at the input), and the output voltage
is taken across the real part of the load impedance (i.e., the 10Ω
resistor).
• For convenience, the two 3.18 𝑛𝐻 inductors are combined, and the
circuit can be viewed as performing a match between a 10Ω load and a
50Ω input resistance.
• The frequency response of the circuit is illustrated in Figure 2.26(𝑏).
Monday, December 16,
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 100
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 101
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 Cont …
• Figure 2.26(𝑏) shows that a peak occurs at the frequency 𝑓𝑜 where the
match occurs, and the filter attenuates the frequencies above and below
𝑓𝑜.
• For a narrow band range of frequencies around 𝑓𝑜 , the filter can be
viewed as a bandpass filter with a loaded 𝑄, which can be calculated
using equation (64).
• The equivalent bandpass filter is shown in Figure 2.26(𝑐), as well as the
frequency response.
• The circuit was obtained by changing 𝑍𝐵 = 10 + 𝑗20Ω to an equivalent
admittance (i.e., 50Ω in parallel with 𝑗25Ω). Monday, December 16,
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102
• The tuned (adjusted) circuit in Figure 2.26(𝑐) is loaded by the resistance.
𝑅𝑇 = 50ȁȁ50 = 25Ω.
• Hence, the loaded 𝑄 of the bandpass filter is given by:
𝜔𝑜 𝐵𝐶 𝐺𝑇 25
𝑄𝐿 = = 𝜔𝑜 𝑅𝑇 𝐶 = = = =1 67
𝐵𝑊 𝐺𝑇 𝑋𝐶 25
• In Figure 2.26(𝑐), since the gain at 𝑓𝑜 = 500 𝑀𝐻𝑧 is −6 𝑑𝐵, it follows
that the value of 𝑉𝐵 is 𝑉𝑆 Τ2.
• Then, from Figure 2.26(𝑎), we have:
10 𝑉𝑠
𝑉𝑜 = 𝑉𝐵 = 0.447 = 𝑉𝑠 0.224
10 + 𝑗20 2
103
Or Cont …
𝑉𝑜
20 log = −13 𝑑𝐵
𝑉𝑠
in agreement with the gain at 𝑓𝑜 = 500𝑀𝐻𝑧 in Figure 2.26(𝑏).
• The equivalent bandpass filter helps to explain the bell – shape response
of the circuit in the neighbourhood of 𝑓𝑜 .
• Away from the neighbourhood of 𝑓𝑜 , the frequency responses of the
circuit in Figure 2.26(𝑎) and Figure 2.26(𝑐) are quite different.
• A question arises about the relation between the circuit node 𝑄 and the
loaded 𝑄 associated with the response in the neighbourhood of 𝑓𝑜 .
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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 104
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 Cont …
• Referring to Figure 2.26(𝑎), it is also observed that the circuit node 𝑄
looking toward the 50Ω source is 2 (since the normalized admittance of the
50Ω source and the −𝑗25Ω capacitor is 1 + 𝑗2).
• Comparing 𝑄𝑛 in equation (66) with 𝑄𝐿 in equation (67), it follows that in
the neighbourhood of 𝑓𝑜 the loaded 𝑄 of the 𝐸𝐼𝐼 matching networks is given
by:
𝑄𝑛
𝑄𝐿 = 68
2
• Using equation (68), the loaded 𝑄 of the circuit in Figure 2.26(𝑎) is:
𝑄𝑛 2
𝑄𝐿 = = =1 Monday, December 16,
2 2 2024
105
 Cont …
• Hence, the approximate bandwidth of the circuit in Figure 2.26(𝑎) is:
𝑓𝑜 500 ∗ 106
𝐵𝑊 ≈ = = 500𝑀𝐻𝑧
𝑄𝐿 1
• The frequency response in Figure 2.26(𝑏) shows that the 3 𝑑𝐵 point
for 𝑓 > 𝑓𝑜 occurs at 𝑓 = 720𝑀𝐻𝑧.
• For 𝑓 < 𝑓𝑜 , there is no 3 𝑑𝐵 point.
• This is due to the low value of 𝑄𝑛 in Figure 2.26(𝑎) and, consequently,
to the frequency response characteristics of the circuit for 𝑓 < 𝑓𝑜 .
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 106
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 Cont …
• However, if we assume that the bell – shape response is symmetrical
around 𝑓𝑜 , it follows that the bandwidth is approximately;
𝐵𝑊 ≈ 2 720 ∗ 106 − 500 ∗ 106 = 440𝑀𝐻𝑧
in reasonable agreement with the predict bandwidth.
• The following example illustrates the bandpass characteristics of an 𝐸𝐼𝐼
network when a high value of 𝑄𝑛 is used.

Monday, December 16,

AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 107
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Example 14:
• The low – pass 𝐸𝐼𝐼 network shown in Figure 2.27(𝑎) was designed to
transform a 200Ω load to an input resistance of 20Ω (see Figure
2.27(𝑏)) at 500 𝑀𝐻𝑧. Determine the loaded 𝑄 of the circuit.
Solution:
• From Figure 2.27(𝑏), the impedance at point 𝐵 is 𝑧𝐵 = 0.1 − 𝑗0.3.
• Hence, the circuit node 𝑄 is 𝑄𝑛 = 0.3Τ0.1 = 3.
• Also, observe that the normalized impedance looking toward the source
is 𝑧𝐵 = 0.1 + 𝑗0.3, giving 𝑄𝑛 = 3.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 108
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 109
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 110
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 Cont …
• From equation (68), it follows that 𝑄𝐿 is:
𝑄𝑛 3
𝑄𝐿 = = = 1.5
2 2
and the expected bandwidth is:
𝑓𝑜 500 ∗ 106
𝐵𝑊 ≈ = = 333.33𝑀𝐻𝑧
𝑄𝐿 1.5
• The frequency response of the circuit in Figure 2.27(𝑐) shows that
𝑓𝑜 = 500𝑀𝐻𝑧 and 𝐵𝑊 = 650 ∗ 106 − 275 ∗ 106 = 375𝑀𝐻𝑧.

Monday, December 16,

AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 111
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Hence; Cont …
500
𝑄𝐿 = = 1.33
375
• These values agree with the expected bandwidth and 𝑄𝐿 .
• In conclusion, in order to obtain a high value of 𝑄𝐿 , the circuit node 𝑄
must be high.
• For the low– pass matching circuit, the attenuation characteristics for
frequencies above 𝑓𝑜 are obviously better than for frequencies below 𝑓𝑜 .
• For bandpass applications, the attenuation of the harmonics above 𝑓𝑜 is
important, and the 𝐸𝐼𝐼 filters will provide an attenuation of
− 12 𝑑𝐵 Τ𝑜𝑐𝑡𝑎𝑣𝑒. Monday, December 16,
2024
112
 Cont …
• In many cases, the matching network provides a match to a complex
impedance (or admittance).
• The frequency response of these circuits can be obtained using an
excitation whose impedance (admittance) is the complex conjugate of
the impedance (or admittance) presented by the matching network.
• In some cases, it is convenient to represent the source excitation by its
Norton’s equivalent circuits.
• For example, in Figure 2.23 (𝑐) shown below, the matching network
was designed to present an output admittance of 𝑌𝑂𝑈𝑇 = 8 − 𝐽12 𝑚𝑆.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 113
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 114
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 Cont …
• The frequency response of this circuit can be performed using a current
source in parallel with a source admittance of 8 − 𝑗12 𝑚𝑆.
• When a high value of 𝑄𝐿 is a design consideration, the 𝐸𝐼𝐼 matching
network in Figure 2.15 might not be suitable since the 𝑄𝐿 can not be
controlled when matching with two elements.
• In fact, with the 𝐸𝐼𝐼 matching networks we have to accept the resulting
𝑄𝑛 in the diagram.
• For example, in the diagram shown in Figure 2.26(𝑎) the value of 𝑄𝑛 is
determined by the equivalent impedance at point 𝐵 – namely, 𝑧 = 0.2 +
𝑗0.4; therefore, in this circuit 𝑄𝑛 is fixed at the value of 2. 115
 Monday, December 16,
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 Cont …
• Higher values of 𝑄𝐿 than those obtained with the 𝐸𝐼𝐼 circuits can be
obtained using matching circuits with three elements.
• The additional of a third element to an 𝐸𝐼𝐼 matching network results in
either the lossless Tee network (also denoted as 𝑇 network) or the
lossless Pi network (also denoted as Π network) shown in Figure 2.28.
• The addition of a third element introduces flexibility in the selection of
the loaded 𝑄, since the equivalent series impedance (or the equivalent
parallel admittance) at the nodes in the circuit will determined various
values of 𝑄𝑛 .
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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 117
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 118
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 Cont …
• Obviously, a high value of 𝑄𝑛 in the circuit will result in a high value of
𝑄𝐿 .
• However, it is not simple to exactly relate 𝑄𝑛 to 𝑄𝐿 in these circuits.
• The 𝑄 of a Tee or Pi network is normally taken as the highest value of
𝑄𝑛 in the circuit.
• Several equivalent series input impedances can have the same 𝑄𝑛 .
• For example, the normalized impedances 𝑧 = 0.5 ± 𝑗0.5 have a 𝑄𝑛 of
1, as well as the impedances 𝑧 = 1 ± 𝑗1.
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 Cont …
• Constant 𝑄𝑛 contours can be drawn on the smith chart.
• This is illustrated in Figure 2.29, where constant 𝑄𝑛 contours of
1, 5, and 10 are shown.
• The upper and lower parts of the constant – 𝑄 contours can be shown
to satisfy a circle equation as follows.
• Since:
1+Γ 1 − 𝑈2 − 𝑉2 2𝑈
𝑧 = 𝑟 + 𝑗𝑥 = = 2 2
+𝑗
1−Γ 1−𝑈 +𝑉 1 − 𝑈 2 + 𝑉2
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 121
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 Cont …
• Then;
𝑥 2𝑈
𝑄𝑛 = =
𝑟 1 − 𝑈2 − 𝑉 2
Which can be written as:
2
𝑈 2 + 𝑉 ± 𝑄1 = 1 + 𝑄12 69
𝑛 𝑛

• The plus sign applies when 𝑥 is positive, and the minus sign when 𝑥 is
negative.
• Equation (69) is recognized as the equation of a circle.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 122
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 Cont …
• For 𝑥 > 0, the center in the Γ plane is at 0, −1Τ𝑄𝑛 , and for 𝑥 < 0
0, 1Τ𝑄𝑛 ; the radius of the circle is:
1 + 𝑄12
𝑛

• For example, for the 𝑄𝑛 = 5 contour in Figure 2.29, the upper and
lower parts of the contour are simply one half of a circle centered at
0, ∓0.2 respectively, with radius of:
1 + 1Τ25 = 1.02
• The following example illustrates the design of Tee and Pi networks for
Monday, December 16,
a given 𝑄𝑛 factor. 2024
123
Example 15:
• Design two tee networks to transform the load impedance 𝑍𝐿𝑂𝐴𝐷 =
50Ω to the input impedance 𝑍𝐼𝑁 = 10 − 𝑗15Ω with a 𝑄𝑛 of 5.
Solution:
• The design of a Tee matching network with a 𝑄𝑛 of 5 is illustrated in
Figure 2.30(𝑎), where a normalizing impedance of 50Ω was used.
➢The motion from 𝐴 to 𝐵 produces a series inductor with impedance
𝑧𝐿1 = 𝑗2;
➢The motion from 𝐵 to 𝐶 produces a shunt capacitor with admittance
𝑦𝐶 = 𝑗0.96 − −𝑗0.4 = 𝑗1.36 (or 𝑧𝐶 = 1Τ𝑗1.36 = −𝑗0.735)
124
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 125
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 ➢The motion from 𝐶 to 𝐷 produces a series inductor with impedance.
𝑧𝐿2 = −𝑗0.3 − −𝑗1 = 𝑗0.7.
• The impedance value at point 𝐶, which touches the 𝑄𝑛 = 5 contour,
determines the 𝑄 of the network.
• The resulting Tee network is shown in Figure 2.30(𝑏), and its frequency
response at 500 𝑀𝐻𝑧 is shown in Figure 2.30(𝑐).
• From Figure 2.30(𝑐), the loaded 𝑄 is calculated to be:
𝑓𝑜 500 ∗ 106
𝑄𝐿 = = 6 6
= 2.7
𝐵𝑊 568 ∗ 10 − 382 ∗ 10
• It is simple to verify that the other Tee network design, shown in Figure
2.30(𝑑), transforms 𝑍𝐿𝑂𝐴𝐷 = 50Ω to 𝑍𝐼𝑁 = 10 − 𝑗15Ω. 126
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 127
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 128
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Example 16:
• Design two Pi networks to transform the load impedance 𝑍𝐿𝑂𝐴𝐷 = 50Ω
to the input impedance 𝑍𝐼𝑁 = 150Ω with a 𝑄𝑛 of 5.
Solution:
• The design of a Pi network with a 𝑄𝑛 of 5 is illustrated in Figure
2.31 (𝑎).
➢The motion from 𝐴 to 𝐵 requires a shunt inductor with admittance
𝑦𝐿1 = −𝑗2.9 (or 𝑧𝐿1 = 𝑗0.345);
➢The motion from 𝐵 to 𝐶 is produced by a series inductor with
impedance 𝑧𝐿2 = 𝑗0.55 − 𝑗0.31 = 𝑗0.24. Monday, December 16,
129
2024
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 130
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 Cont …
• Point 𝐶 is on the 𝑄𝑛 = 5 contour; therefore, the circuit 𝑄 is 5.
➢Finally, the motion from 𝐶 to 𝐷 produces a shunt capacitor whose
admittance is 𝑦𝐶 = 0 − −𝑗1.75 = 𝑗1.75 (or 𝑧𝐶 = −𝑗0.571).
• The resulting Pi network is shown in Figure 2.31(𝑏).
• It is simple to verify that the other Pi network design, shown in Figure
2.31(𝑐), transforms 𝑍𝐿𝑂𝐴𝐷 = 50Ω to 𝑍𝐼𝑁 = 150Ω.

Monday, December 16,

AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 131
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 132
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 Cont …
• The design of lossless matching networks is accomplished by moving
along constant resistance and constant conductance circles in the Smith
chart.
• A question commonly asked is, “What happen if one moves along a
constant – reactance or a constant – susceptance circle in the Smith
chart?”.
• The answer is simple: A motion along a constant – reactance circle
introduces a series resistance, and a motion along a constant –
susceptance introduces a shunt resistance.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 133
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 Cont …
• The resistance is positive if the motion is along the constant – reactance
circle in the direction that 𝑟 increases, or along the constant susceptance
circle in the direction that 𝑔 increases.
• It is important to emphasize that resistors are lossy elements and, in
general, are avoided in the design of matching networks.

Monday, December 16,

AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 134
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Example 17:
• A matching network is designed as shown in the 𝑍𝑌 Smith chart in
Figure 2.32(𝑎) to transform a 50Ω load to the input impedance 𝑍𝐼𝑁 =
50 1.6 − 𝐽1.2 Ω . Draw the matching circuit and determine the
component values.
Solution:
➢The motion from 𝐴 to 𝐵 results in a series inductor of value 𝑧𝐿 =
𝑗0.6 (or 𝑍𝐿 = 50 𝑗0.6 = 𝑗30Ω).
➢The motion from 𝐵 to 𝐶, along the constant – reactance circle 𝑥𝐿 =
0.6, results in a series resistor.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 135
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 136
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 Cont …
• The impedance at 𝐵 is 𝑧𝐵 = 1 + 𝑗0.6, and the impedance at 𝐶 is 𝑧𝐶 =
2.3 + 𝑗0.6.
• Therefore, the value of the series resistor is 𝑟 = 𝑟𝐶 − 𝑟𝐵 = 2.3 − 1 =
1.3, or 𝑅 = 50 ∗ 𝑟 = 50 ∗ 1.3 = 65Ω.
➢Finally, the motion from 𝐶 to 𝐷 results in a capacitor of value 𝑦𝐶 =
𝑗0.3 − −𝑗0.1 = 𝑗0.4 [or 𝑧𝐶 = 1Τ𝑦𝐶 = −𝑗2.5 , 𝑍𝐶 = 50 ∗
−𝑗2.5 = −𝑗125Ω]
• The matching circuit is shown in Figure 2.32(𝑏).

Monday, December 16,

AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 137
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 138
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 Cont …
• In a microwave amplifier (see in Figure 2.14), the input and output
matching networks provides the appropriate ac impedances to the
transistor.
• The transistor must also be biased at an appropriate quiescent point.
• A complete microwave amplifier contains both dc bias components and
the ac matching networks.

Monday, December 16,

139
2024
 Cont …
• 𝑅𝐹𝐶s, bypass capacitors, and coupling capacitors need to be introduced
so the dc bias components do not affect the ac performance of the
amplifier.
• An example of a discrete microwave amplifier is shown in Figure
2.33(𝑎).
• The capacitors, denoted by 𝐶𝐵 are bypass capacitors (they behave like
short circuits at the frequency of operation).
• The 𝑅𝐹𝐶s behave like open circuits at the frequency of operation.
• The resistors 𝑅1 , 𝑅2 , 𝑅𝐶 and 𝑅𝐸 set the quiescent point of the transistor.
Monday, December 16,
140
2024
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 141
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 Cont …
• The input matching circuits consists of 𝐶1 and 𝐿1 , and the output
matching circuit consists of 𝐶2 and 𝐿2 .
• In addition, the capacitors 𝐶1 and 𝐶2 act like coupling capacitors.
• That is, they isolate the dc bias circuit from the input source.
• The dc model of the amplifier is shown in Figure 2.33 (𝑏), and the ac
model in Figure 2.33(𝑐).

Monday, December 16,

AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 142
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 143
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 MICROSTRIP Matching Networks
Microstrip Lines:
• Microstrip lines are used extensively in building microwave transistor
amplifiers because they are easily fabricated using printed – circuit
techniques.
• Network interconnections and the placement of lumped and transistor
devices and easily made on its metal surface.
• The superior performance characteristics of the microstrip line make it
one of the most important mediums of transmission in microwave
transistor amplifiers and in microwave integrated – circuit technology.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 144
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 Cont …
• A microstrip line is, by definition, a transmission line consisting of a strip conductor
and a ground plane separated by a dielectric medium.
• Figure 2.34 illustrates the microstrip geometry.
• The dielectric material serves as a substrate and is sandwiched between the strip
conductor and the ground plane.
• The relative dielectric constant of the substrate, 𝜀𝑟 , and 𝜀 are related by 𝜀 = 𝜀𝑟 𝜀𝑜 ,
where 𝜀𝑜 = 8.854 ∗ 10−12 𝐹 Τ𝑚.
• Some typical dielectric substrates are 𝑅𝑇Τ𝐷𝑢𝑟𝑜𝑖𝑑® (a trade mark of Rogers
Corporation, Chandler, Arizona), which is available with several values of (E.g., 𝜀 =
2.23𝜀𝑜 , 𝜀 = 6𝜀𝑜 , 𝜀 = 10.5𝜀𝑜 , etc.); quartz (𝜀 = 3.7𝜀𝑜 ), Alumina (𝜀 = 9𝜀𝑜 ); and
Epsilam - 10® 10® (𝜀 = 10𝜀𝑜 ). Monday, December 16,
2024
145
 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 146
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 Cont …
• The electromagnetic field lines in the microstrip are not contained
entirely in the substrate.
• Therefore, the propagation mode in the microstrip is not a pure
transverse electromagnetic mode (TEM mode) but a quasi – TEM.
• Assuming a quasi – TEM mode of propagation in the microstrip line,
the phase velocity is given by:
𝑣𝑝 = 𝜀𝑐 70
𝑓𝑓

Where 𝑐 is the speed of light (i.e., 3 ∗ 108 𝑚Τ𝑠) and 𝜀𝑓𝑓 is the effective
relative dielectric constant of the microstrip. Monday, December 16,
147
2024
 Cont …
• The effective relative dielectric constant of the microstrip is related to
the relative dielectric constant of the dielectric substrate and also takes
into account the effect of the external electromagnetic fields (i.e.,
fringing effects must be considered).
• Since 𝑍𝑜 = 𝐿Τ𝐶 and 𝑣𝑝 = 1Τ 𝐿𝐶 the characteristic impedance of
the microstrip line can be expressed in the form:
1
𝑍𝑜 = 71
𝑣𝑝 𝐶
Where 𝐶 is the capacitance per unit length of the microstrip.
Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 148
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 Cont …
• The wave length in the microstrip line is given by:
𝑣𝑝 𝑐 λ𝑜
λ= = = 72
𝑓 𝑓 𝜀𝑓𝑓 𝜀𝑓𝑓
Where λ𝑜 is the free – space wavelength.
• As seen from equations (70), (71) and (72) the evaluation of 𝑣𝑝 , 𝑍𝑜
and 𝜆 in a microstrip line requires the evaluation of 𝜀𝑓𝑓 and 𝐶.
• There are different methods for determining 𝜀𝑓𝑓 and 𝐶 and, of course,
closed – form expressions are of great importance in microstrip – line
design. Monday, December 16,
2024
149
 Cont …
• The evaluation of 𝜀𝑓𝑓 and 𝐶 based on a quasi – TEM mode is accurate
for design purpose at lower microwave frequencies.
• However, at higher microwave frequencies the longitudinal components
of the electromagnetic fields are significant and the quasi – TEM
assumption is no longer valid.
• A useful set of relations for the characteristics impedance, assuming
zero or negligible thickness of the strip conductor (i.e., 𝑡Τℎ < 0.005), is
as follows.

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AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 150
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 151
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 152
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 153
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 154
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 155
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 156
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 157
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 158
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 Monday, December 16,
AMiT-ECE MICROWAVE DEVICES AND SYSTEMS CHAPTER TWO 159
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 Cont …
• Typical plating thickness of copper is from 1Τ2 𝑚𝑖𝑙𝑠 to 2 𝑚𝑖𝑙𝑠
(1 𝑖𝑛𝑐ℎ = 1000𝑚𝑖𝑙𝑠).
• The value of 𝜀𝑟 and the dielectric thickness (ℎ) determine the width of
the microstrip line for a given 𝑍𝑜 .
• These parameters also determine the speed of propagation in the line,
and consequently its length.
• Typical dielectric thickness are 25,30,40,50, and 100 𝑚𝑖𝑙𝑠.

Monday, December 16,

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 PART TWO OF CHAPTER TWO

WILL CONTINUE …

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 Signal Flow Graph

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 END OF CHAPTER TWO

THANK YOU!!!

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