Corporate Concept

Yeng Tat Electronics Co., Ltd. is organized by a group of enthusiastic people

who have already been engaged in the field of ferrite industry with technical
and manufacturing experiences. As a leading manufacturer in Taiwan, Yeng
Tat is famed among the local & abroad customers on its renowned quality
products. Output of the company has tripled since its establishment in 1977
and plant facilities & personnel consequently have doubled. In view of steadily
growing orders flowing in from clients spread over Hong Kong, Korea, Unite
State, South America and European countries, the company is always at the
stage of expansion. As a response to all premier customers, the staffs of Yeng
Tat are determined to proceed with a step forward to an even-higher goal of
administration and quality level.

As one of leading specialized manufacturers in producing Ferrite Cores in

Taiwan, Yeng Tat has obtained ISO 9001 certification since September 1998
and TS16949 certification since September 2011 for its Taiwan factory.

The main products are Ferrite Cores made of Ni-Zn and Mn-Zn materials. On
offer are PLANAR EI/EE, EI/EE/EF/EFD/ETD, POT/RM/EP/ER/ERC/PQ/EQ,
UU/UI, T/TH/THP, R/RI/RID/RH/RWW,
SDRI/LDRI/DRI/SDRP/MSDRI/MLDRI/MSRIH,
MH/MDR/DR/DRWW/DR3W/DR4W, Frame and Bar Core, and SMB Beads.

Monthly production capacity is 80 tons for Ni-Zn Ferrite Cores and 100 tons
for Mn-Zn Ferrite Cores.
 RoHS Compliance Statement

January, 2018

This document serves as certification that all ferrite cores produced by Yeng
Tat Electronics Co., Ltd. are compliant with the RoHS legislation (2002/95/EC)
and its revision (2011/65/EU).

Due to the large amount of part numbers supplied to our customers, estimate
that exceed 1,000 variety, it is impractical for Yeng Tat to have every part
tested by a third party laboratory. Therefore our product lines are categorized
by its respective material, powder of each material undergone testing by
impartial third party laboratory for all RoHS restricted substances. The tested
results will be representative of our entire array of ferrite core products.

In a small part of Yeng Tat Ni-Zn ferrite, Pb will be present. However, this
use is exempt from RoHS legislation (2011/65/EU) per the annex No. 3 item
7(C)-1 referring to “lead in electronic ceramic parts”. In order for easier
identification on the Pb content of our products, we have listed separately
material of lead-contained and lead-free items for customers’ reference. We
will continue to develop lead-free material as substitute to current
lead-contained material, to offer our customers ample selection of desired
materials.

If you have any questions, or if you would like to request RoHS analytical
results, please contact our customer service representative.

Sincerely,

Tim Yang
Vice President
 CORPORATE OVERVIEW
HOME PLANT:
COMPANY NAME :YENG TAT ELECTRONICS CO., LTD
NO. 25, GONGXING ST., SHU-LIN DIST.,
NEW TAIPEI CITY, TAIWAN
TEL:886-2-26891473(REP.)
FAX:886-2-26894843
E-mail: [email protected]
[email protected]
http://www.yeng-tat.com
DATE ESTABLISHED :JANUARY 1977
PROPRIETORS :J.N.YANG (PRESIDENT)
REGISTERED CAPITAL :US$2,000,000.00
LAND DIMENSION :8,000㎡
PLANT DIMENSION :10,000㎡
EMPLOYEES :130
PRODUCT :Ni-Zn FERRITE CORES & Mn-Zn FERRITE CORES
CAPACITY :100 TON/M FOR Mn-Zn FERRITE CORES
80 TON/M FOR Ni-Zn FERRITE CORES
MAIN EQUIPMENTS :1. SPRAY DRYER 1 SET
2. ELECTRIC FURNACE 3 PCS FOR MATERIAL(PUSH TYPE)
3 PCS FOR Ni-Zn CORES(PUSH TYPE)
3 PCS FOR Mn-Zn CORES(PUSH TYPE)
2 PCS FOR Mn-Zn CORES(BATCH TYPE)
3. PRESSES 55 PCS
4. CUTTING FOR DRUM CORES 30 PCS(ROTARY TYPE)
10 PCS(SINGLE TYPE)
5. CENTERLESS MACHINES 3 PCS
6. SURFACE GRINDING MACHINES 3 SET
7. CUTTING MACHINE 1 SET(FOR EE,EI,U,UI CORES)
8. GAPING MACHINE 1 SET(LINE GAPING)
2 SET(CENTER GAPING)
9. PARYLENE COATING SYSTEM 1 SET

CHINA PLANT:
COMPANY NAME :YENG TAT ELECTRONICS(EN PING) CO., LTD
NO.39, SEC.F,FOREIGN-CAPITAL
& PRIVATE-OWNED INDUSTRIAL ZONE,
ENPING CITY, GUANGDONG, CHINA.
FAX:86-750-7815100
FAX:86-750-7815279
E-mail: [email protected] / [email protected]
DATE ESTABLISHED :OCTOBER 2007
REGISTERED CAPITAL :US$5,000,000.00
LAND DIMENSION :33,000㎡
PLANT DIMENSION :8,000㎡
EMPLOYEES :80
PRODUCT :Ni-Zn FERRITE CORES
CAPACITY :80 TON/M FOR Ni-Zn FERRITE CORES
MAIN EQUIPMENTS :1. ELECTRIC FURNACE 2 PCS FOR Ni-Zn CORES(PUSH TYPE)
2. PRESSES 14 PCS
3. CUTTING FOR DRUM CORES 9 PCS(ROTARY TYPE)
3 PCS(SINGLE TYPE)
4. CENTERLESS MACHINES 1 PCS
 CONTENTS
MATERIAL 5
MI Cores 25
MDR Cores 26
MDRI Cores 27
MLDRI(1) Cores 28
MLIDR Cores 29
MLDRI(2) Cores 30
MSDRI Cores 32
MH Cores 36
MSRIH Cores 40
DR Cores 41
DRI Cores 44
LDRI Cores 45
SDRI Cores 48
SDRP Cores 51
SP Cores 52
ST Cores 53
STP Cores 54
SD Cores 55
EI(Planar core) Cores 56
EQ(Planar core) Cores 57
ER Cores 58
ERC Cores 59
PQ(Planar core) Cores 60
XE(Planar core) Cores 61
SEP(Planar core) Cores 62
UI-1(Frame and Bar core) Cores 63
UI-2 Cores 64
 PROPERTIES OF Ni-Zn FERRITE MATERIAL ( LEAD FREE)
Property Working
μi Bm Br Hc Tc αμγ Tanδ/μi d ρ
YTE Frequency
Meterial MHZ Gauss Gauss Oe ℃ x10-6∕℃ x10-6 ｇ/cm3 Ω㎝

L1HF 115 1 ~ 15 4100 3050 2.0 300 51 80(1MHZ) 90(15MHZ) 5.0 107

E9D 230 0.1 ~ 4 3800 2400 0.9 300 30 35(0.1MHZ) 70(4MHZ) 5.0 107

E9S 240 0.05 ~ 3 4300 3100 0.7 260 35 40(0.05MHZ) 80(3.0MHZ) 5.0 106

E9H 250 0.05 ~ 3 4300 3000 0.6 300 30 35(0.05MHZ) 70(3MHZ) 5.0 107

E4D 350 0.1 ~ 2 3500 1500 0.5 200 20 20(0.1MHZ) 90(2MHZ) 5.1 106

E4SV 360 0.1 ~ 2 4000 2000 0.5 240 25 20(0.1MHZ) 75(2.0MHZ) 4.9 106
P Property
E4DS 380 0.15 ~ 4 3800 2000 0.65 250 15 37(0.15MHZ) 220(4.0MHZ) 5.0 107
6
E4S 400 0.1 ~ 2 4200 2700 0.55 240 25 20(0.1MHZ) 80(2.0MHZ) 5.0 106

E4G 400 0.05 ~ 2 4000 2400 0.4 200 25 10(0.05MHZ) 65(2MHZ) 4.9 106

E4KV 410 0.1 ~ 2 4000 2400 0.7 260 20 30(0.1MHZ) 160(2.0MHZ) 5.0 107

E4K 450 0.1 ~ 2 4500 3100 0.7 260 20 25(0.1MHZ) 100(2.0MHZ) 5.0 107

E5D 500 0.1 ~ 1.5 3600 1500 0.5 200 15 20(0.1MHZ) 130(1.5MHZ) 5.0 107

E5S 600 0.1 ~ 1.5 4000 2400 0.4 180 20 10(0.1MHZ) 75(1.5MHZ) 5.0 106

E5K 600 0.1 ~ 1.5 4200 2800 0.24 220 30 10(0.1MHZ) 50(1.5MHZ) 5.0 106

E5G 700 0.1 ~ 1.5 4000 2400 0.3 180 20 14(0.1MHZ) 90(1.5MHZ) 5.0 107

E5H 900 0.1 ~ 1.5 3600 2100 0.35 150 10 10(0.1MHZ) 95(1.5MHZ) 5.0 107
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E4D INITIAL PERMEABILITY VS

TEMPERATURE
μi unit 350 700

Working Frequency MHz 0.1~2 600

Bm Gauss 3600 500

Permeability(μi)
Br Gauss 1500 400

Hc Oe 0.5
300

Tc ℃ 200
-6 200
αμγ x10 /℃ 20
-6 20(0.1MHz) 100
tanδ/μi x10
90(2MHz)
3 0
d g/cm 5.1 -20 20 60 100 140 180 220

6 Temperature(℃)
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
5000
80

60
4000
Flux density B(Gauss)

40
3000 20
△ L/L(%)

0
2000
-20

1000 -40

-60
0
-80
0 5 10 15 20
-20 0 20 40 60
Magnetic field H(Oe) Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03

1.E-04
Tanδ/μi

1.E-05

1.E-06
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E4G INITIAL PERMEABILITY VS

μi unit 400 TEMPERATURE
1200

Working Frequency MHz 0.05~2

1000

Bm Gauss 4000
800

Permeability(μi)
Br Gauss 2400
Hc Oe 0.4 600

Tc ℃ 200 400
-6
αμγ x10 /℃ 25
200
-6 10(0.05MHz)
tanδ/μi x10
65(2MHz)
0
3
d g/cm 4.9 -20 20 60 100 140 180 220

6 Temperature(℃)
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
5000
80

60
4000
40
Flux density B(Gauss)

3000 20
△L/L(%)

0
2000
-20

1000
-40

-60
0 -80
0 5 10 15 20 -20 0 20 40 60
Magnetic field H(Oe) Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03

1.E-04
Tanδ/μi

1.E-05

1.E-06
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E4S INITIAL PERMEABILITY VS

μi unit 400 TEMPERATURE
1400

Working Frequency MHz 0.1~2 1200

Bm Gauss 4200 1000

Permeability(μi)
Br Gauss 2700 800

Hc Oe 0.55 600

Tc ℃ 240
400
-6
αμγ x10 /℃ 25
200
-6 20(0.1MHz)
tanδ/μi x10
80(2MHz) 0
3 -20 20 60 100 140 180 220 260
d g/cm 5.0
T emperature(℃)
6
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
5000
40

4000
Flux density B(Gauss)

20
3000
△ L/L(%)

0
2000

-20
1000

0 -40
0 5 10 15 20 -20 0 20 40 60

Magnetic field H(Oe) T emperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03

1.E-04
Tanδ/μi

1.E-05

1.E-06
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E5D
INITIAL PERMEABILITY VS
μi unit 500 TEMPERATURE
700.0

Working Frequency MHz 0.1~1.5 600.0

Bm Gauss 3600 500.0

Permeability(μi)
Br Gauss 1500 400.0

Hc Oe 0.5
300.0

Tc ℃ 200
200.0
-6
αμγ x10 /℃ 15
100.0
-6 20(0.1MHz)
tanδ/μi x10
130(1.5MHz) 0.0
3 -20 20 60 100 140 180 220
d g/cm 5.0
Temperature(℃)
7
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
5000
40

4000
20
Flux density B(Gauss)

△L/L(%)

3000
0
2000

-20
1000

-40
0
-20 0 20 40 60
0 5 10 15 20
Temperature(℃)
Magnetic field H(Oe)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03

1.E-04
Tanδ/μi

1.E-05

1.E-06
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E5G
INITIAL PERMEABILITY VS
μi unit 700
TEMPERATURE
1600.0
Working Frequency MHz 0.1~1.5
1400.0

Bm Gauss 4000 1200.0

Permeability(μi)
Br Gauss 2400 1000.0

Hc Oe 0.3 800.0

600.0
Tc ℃ 180
-6 400.0
αμγ x10 /℃ 20
200.0
-6 14(0.1MHz)
tanδ/μi x10
90(1.5MHz) 0.0
-20 20 60 100 140 180 220
3
d g/cm 5.0
Temperature(℃)
7
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
5000
80

4000 60
Flux density B(Gauss)

40
3000 20
△L/L(%)

0
2000
-20
1000 -40
-60
0
-80
0 5 10 15 20
-20 0 20 40 60
Magnetic field H(Oe)
Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03

1.E-04
Tanδ/μi

1.E-05

1.E-06
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E5H

μi unit 900 INITIAL PERMEABILITY VS

TEMPERATURE
2500.0
Working Frequency MHz 0.1~1.5
2000.0
Bm Gauss 3600

Permeability(μi)
Br Gauss 2100 1500.0

Hc Oe 0.35
1000.0
Tc ℃ 150
-6
αμγ x10 /℃ 10 500.0

-6 10(0.1MHz)
tanδ/μi x10
95(1.5MHz) 0.0
-20 20 60 100 140 180
3
d g/cm 5.0
Temperature(℃)
7
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
4000
50
40
Flux density B(Gauss)

3000 30
20
△L/L(%)

10
2000 0
-10
-20
1000
-30
-40
-50
0
-20 0 20 40 60
0 5 10 15 20
Temperature(℃)
Magnetic field H(Oe)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03

1.E-04
Tanδ/μi

1.E-05

1.E-06
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E9D
INITIAL PERMEABILITY VS
μi unit 230 TEMPERATURE

450
Working Frequency MHz 0.1~3.5
400

Bm Gauss 3800 350

Br Gauss 2400

Permeability(μi)
300

250
Hc Oe 0.9
200
Tc ℃ 300
150
-6
αμγ x10 /℃ 30 100

-6 50(0.1MHz)
tanδ/μi x10 50
100(3.5MHz)
0
3
d g/cm 5.0 -20 20 60 100 140 180 220 260 300

7 Temperature(℃)
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
30
5000

20
4000
Flux density B(Gauss)

10
△L/L(%)

3000
0
2000
-10
1000
-20

0
-30
0 5 10 15 20
-20 0 20 40 60
Magnetic field H(Oe)
Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03
Tanδ/μi

1.E-04

1.E-05
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E9H
INITIAL PERMEABILITY VS
μi unit 250 TEMPERATURE

Working Frequency MHz 0.05~3 1200

1000
Bm Gauss 4300
Br Gauss 3000

Permeability(μi)
800

Hc Oe 0.6 600

Tc ℃ 300
400
-6
αμγ x10 /℃ 30
-6 35(0.05MHz) 200
tanδ/μi x10
70(3MHz)
0
3
d g/cm 5.0 -20 20 60 100 140 180 220 260 300

7 Temperature(℃)
ρ Ω．cm 10

B-H CURVES INDUCTANCE CHANGE VS

TEMPERATURE
5000 40

30
4000
Flux density B(Gauss)

20
3000
10
△ L/L(%)

2000 0

-10
1000
-20
0
-30
0 5 10 15 20
Magnetic field H(Oe) -40
-20 0 20 40 60
Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03
Tanδ/μi

1.E-04

1.E-05
0.01 0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material E4DS INITIAL PERMEABILITY VS

TEMPERATURE
μi unit 380 800

Working Frequency MHz 0.15~4 700

600
Bm Gauss 3800

Permeability(μi)
500
Br Gauss 2000
400
Hc Oe 0.65
300
Tc ℃ 250
αμγ x10-6/℃ 15 200

37(0.15MHz) 100
tanδ/μi x10-6
220(4MHz)
0
d g/cm3 5.0 -20 20 60 100 140 180 220 260

7 Temperature(℃)
ρ Ω．cm 10

INDUCTANCE CHANGE VS
B-H CURVES
TEMPERATURE
5000 40.0

4000
Flux density B(Gauss)

20.0

3000
△L/L(%)

0.0
2000

-20.0
1000

0 -40.0
0 5 10 15 20 -20 0 20 40 60

Magnetic field H(Oe) Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-03
Tanδ/μi

1.E-04

1.E-05
0.10 1.00 10.00

Frequency (MHz)
 YENG TAT ELECTRONICS CO., LTD
No .25, Gongxing S., Shu-Lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
Fax:+886-2-2689-4843 Tel:+886-2-2689-1473 e-mail: [email protected]

Material E10H
INITIAL PERMEABILITY VS
μi unit 2000
TEMPERATURE
3000
Working Frequency MHz 0.1~0.7
2500
Bm ( Hm=20 Oe) Gauss 2900

Permeability(μi)
Br Gauss 1380 2000

Hc Oe 0.2 1500
Tc ℃ 100
1000
-6
αμγ x10 /℃ 1.5
500
-6
10(0.1MHz)
tanδ/μi x10
50(0.7MHz) 0
-40 -20 0 20 40 60 80 100 120
d g/cm3 5 Temperature(°C)
ρ Ω．cm 106

B-H CURVES INDUCTANCE CHANGE VS

3500 TEMPERATURE
50
3000
40
2500 30
Flux density B(Gauss)

20
△L/L(%)

2000 10
1500 0
-10
1000 -20
500
-30
-40
0 -50
0 5 10 15 20 -40 10 60
Magnetic field H(Oe) Temperature(℃)

RELATIVE LOSS FACTOR VS

FREQUENCY
1.E-04
Tanδ/μi

1.E-05

1.E-06
0.10 1.00
Frequency(MHZ)
 PROPERTIES OF Mn-Zn FERRITE MATERIAL ( LEAD FREE)
Property Working
μi Bm Br Hc Tc αμγ Tanδ/μi d ρ
Frequency
-6 -6 3
Meterial MHZ Gauss Gauss Oe ℃ x10 ∕℃ x10 ｇ/cm Ω㎝
J1M 700 <2.0 3800 3000 0.30 170 20 160 4.7 200
J1L 850 <1.5 3800 3000 0.40 170 15 110 4.8 200
JF3 1200 <1.0 5000 2950 0.6 290 5 8 4.8 1000
JF35 1400 <1.0 5000 2000 0.60 260 5 8 4.8 1000
J2M 2000 <0.5 5100 1300 0.12 220 6 8 4.9 600
J2K 2100 <0.4 5200 1400 0.2 260 4 6 4.8 200
JP40 2300 <0.4 5000 1200 0.12 210 8 5 4.8 500
JP44 2500 <0.4 5200 1750 0.18 220 6 5 4.8 600
J2 2800 <0.4 5100 1400 0.15 200 4 10 4.8 300
J2H 3000 <0.3 5400 1300 0.15 240 1.5 10 4.9 100
JP95 3000 <0.4 5200 1050 0.16 220 3 8 4.8 700
J3M 3500 <0.2 4600 1350 0.18 180 1.5 8 4.8 30
J3H 4000 <0.15 4600 1600 0.18 160 1.5 15 4.8 20
J4 4500 <0.1 4000 1250 0.08 120 1.5 15 4.8 20
J55 4500 <0.1 5000 1250 0.08 150 1.5 20 4.9 15
J5 5500 <0.1 4000 1250 0.08 110 1.5 20 4.9 15
J6 6000 <0.1 4200 1250 0.08 110 1 20 4.9 15
J7 7500 <0.1 4000 1250 0.07 110 0.6 25 4.9 10
J9 8500 <0.1 3900 1100 0.06 110 0.5 25 4.9 10
J10 10000 <0.05 4300 1950 0.10 120 0.1 40 4.8 10
Core Loss
Material JF35 JF3 JP95 JP44 JP40 J2 J2M
3
Pcv(kw/m ) 200mT 25KHz 25℃ 100 120 140 135
60℃ 68 80 120 100
100℃ *48 70 170 120
120℃ 85 85
100KHz 25℃ 450 600 630 750 780
60℃ 370 410 500 650 620
100℃ *330 *320 430 950 750
120℃ 400 540 510
50mT 500KHz 25℃ 150 238
60℃ 85 142
80℃ 80 155
100℃ 100 190
25mT 1MHz 25℃ 120
60℃ 115
80℃ 155
100℃ 180
* TEST TEMPERATURE 90℃
 YENG TAT ELECTRONICS CO., LTD.

M ATERIAL C ROSS R EFERENCE L IST (Mn-Zn) March. 2016

YTE TDK FERROXCUBE EPCOS ACME FDK NICERA HITACHI TOKIN TOMITA FAIR-RITE DMEGC TDG
JP40 PC40 3C90 N67 P4 6H20 NC-2H ML24D BH2 2G8 78 DMR40 TP4
JP44 PC44 3C94/3C96 N87/N97 P41 6H40 2HM5 ML25D BH1 DMR44 TP4A
JP45 PC45 6H41 TP4B
3C91 ML30D
JP46 PC46 N51 TP4C
**** PC47 TP4D
JP95 PC95 3C95 N95 P46/P47 6H42 3H ML33D 2N2 DMR95 TP4W
JF3 3F3 P5 2M 2H8 DMR50B
79
JF35 PC50 3F35 N49 P51 7H10 5M ML12D B40 DMR50 TP5
**** 3F4 7H20
J1M H6F 3D3 33
J1L 3B1 M33 2H6
J2M H6K 3H3 N27 77
H3T N48
J2 H3S 3B7 N41 2H03 NC-1L 73
H7C1 3C81
J3M H5A 3E1 2H5
H7B
J3H 3S1 T57 NC-4Y DMR4KDC
J4 HP4 3E4 N30 2H04
J5 H5B T65 A05 NC-5Y MQ53D 5H 2G4 75 DMR5K TS5
HP5 T35
J6 3E25 T37 2H06
J7 H5B2 3E26 T36 A7 2H07 NC-7 MP70D 7H 2G1 DMR7K TS7
J10 H5C2 3E5 T38 A10 2H10 NC-10H MP10T 10H 2H2A 76 DMR10K TS10
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material J2M

μi unit 2000 INITIAL PERMEABILITY VS

TEMPERATURE
4500
Working Frequency MHz <0.5
4000

Bm Gauss 5100 3500

Permeability(μi)
3000
Br Gauss 1300
2500
Hc Oe 0.12
2000
Tc ℃ 220 1500
-6
αμγ x10 /℃ 6 1000

-6 500
tanδ/μi x10 8
3 0
d g/cm 4.8 -40 0 40 80 120 160 200 240

ρ Ω．cm 600 Temperature(℃)

CORE LOSS vs TEMPERATURE B-H CURVES

1000 5000
900
Flux density B(Gauss)

200mT, 100KHz
800 4000
700
Pcv(kw/m )
3

600 3000
500
400 2000
300
200mT, 25KHz
200 1000
100
0 0
0 20 40 60 80 100 120 0 5 10 15
Temperature(℃) Magnetic field H(Oe)

INDUCTANCE CHANGE VS
TEMPERATURE
80
60
40
△L/L(%)

20
0
-20
-40
-60
-80
-20 0 20 40 60

Temperature(℃)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material J2
INITIAL PERMEABILITY VS
μi unit 2800
TEMPERATURE
4500
Working Frequency MHz <0.4
4000

3500
Bm Gauss 5100

Permeability(μi)
3000
Br Gauss 1400
2500
Hc Oe 0.15 2000

Tc ℃ 200 1500

-6
αμγ x10 /℃ 4 1000

-6 500
tanδ/μi x10 10
0
3
d g/cm 4.8 -40 0 40 80 120 160 200 240

Temperature(℃)
ρ Ω．cm 300

B-H CURVES
CORE LOSS VS TEMPERATURE
5000
1000
900
4000
800
Flux density B(Gauss)
Pcv(kw/m )

700
3

200mT ,100KHz
3000
600
500
400 2000
300
200mT ,25KHz
200 1000
100
0 20 40 60 80 100 120 0
0 5 10 15
Temperature(℃) Magnetic field H(Oe)

INDUCTANCE CHANGE VS
TEMPERATURE
80
60
40
20
△ L/L(%)

0
-20
-40
-60
-80
-20 0 20 40 60
Temperature(℃)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material JF3
INITIAL PERMEABILITY VS
μi unit 1200 TEMPERATURE
2500
Working Frequency MHz <1.0
2000
Bm Gauss 5000

Permeability(μ i)
Br Gauss 2950 1500

Hc Oe 0.6
1000
Tc ℃ 290
-6
αμγ x10 /℃ 5 500

-6
tanδ/μi x10 8
0
3
d g/cm 4.8 -50 0 50 100 150 200 250 300

Temperature(℃)
ρ Ω．cm 1000

CORE LOSS VS TEMPERATURE B-H CURVES

300 6000

500kHz 50mT

250 5000
Flux density B(Gauss)

200 4000
Pcv(kW/m3)

150 3000

100 1000kHz 25mT 2000

50 1000

0 0
20 40 60 80 100 0 2 4 6 8 10 12 14 16 18 20

Temperature (℃) Magnetic field H(Oe)

INDUCTANCE CHANGE INITIAL PERMEABILITY & RELATIVE

VSTEMPERATURE LOSS FACTOR VS FREQUENCY
40
0.01 10000

30

20 0.001 1000
Permeability(μi)
△L/L(%)

10
Tanδ/μi

0 0.0001 100

-10

0.00001 10
-20

-30
-20 -10 0 10 20 30 40 50 60 0.000001 1
Temperature(℃ ) 1 10 100 1000 10000
Frequency (kHz)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material JF35

μi unit 1400 INITIAL PERMEABILITY VS

TEMPERATURE
2500
Working Frequency MHz <1.0
2000
Bm Gauss 5000

Permeability(μi)
Br Gauss 2800 1500

Hc Oe 0.6
1000
Tc ℃ 260
-6
αμγ x10 /℃ 5 500
-6
tanδ/μi x10 8
3 0
d g/cm 4.8 -20 20 60 100 140 180 220 260

ρ Ω．cm 1000 Temperature(℃)

B-H CURVES
CORE LOSS VS TEMPERATURE
6000
200
5000

150
Flux density B(Gauss)
Pcv(kw/m )

4000
3

100 3000

2000
50
50mT, 500KHz
1000
0
0 20 40 60 80 100 120 0
0 2 4 6 8 10 12 14 16 18 20
Temperature(℃)
Magnetic field H(Oe)

INDUCTANCE CHANGE INITIAL PERMEABILITY & RELATIVE

VSTEMPERATURE LOSS FACTOR VS FREQUENCY
40
0.01 10000

30

20 0.001 1000
Permeability(μi)
△ L/L(%)

10
Tanδ/μi

0.0001 100
0

-10
0.00001 10

-20

-30 0.000001 1
-20 -10 0 10 20 30 40 50 60 1 10 100 1000 10000
Frequency (kHz)
Temperature(℃)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material JP40
INITIAL PERMEABILITY VS
μi unit 2300
TEMPERATURE
8000
Working Frequency MHz <0.4
7000

Bm Gauss 5000 6000

Permeability(μi)
Br Gauss 1200 5000

Hc Oe 0.12 4000

Tc ℃ 210 3000

-6 2000
αμγ x10 /℃ 8
-6 1000
tanδ/μi x10 5
0
3
d g/cm 4.8 -40 0 40 80 120 160 200 240

Temperature(℃)
ρ Ω．cm 500

B-H CURVES
CORE LOSS VS TEMPERATURE
900 5000
800
700 4000
Flux density B(Ga uss)

200mT, 100KHz
600
Pcv(kw/m )
3

3000
500
400
2000
300
200mT, 25KHz
200 1000
100
0 0
0 20 40 60 80 100 120 0.0 5.0 10.0 15.0

Temperature(℃) Magnetic field H(Oe)

INDUCTANCE CHANGE VS
TEMPERATURE
80
60
40
20
△L/L(%)

0
-20
-40
-60
-80
-20 0 20 40 60
Temperature(℃)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material JP44
INITIAL PERMEABILITY VS
μi unit 2500 TEMPERATURE
6000

Working Frequency MHz <0.4

5000

Bm Gauss 5200
4000

Permeability(μi)
Br Gauss 1750
3000
Hc Oe 0.18
Tc ℃ 220 2000

-6
αμγ x10 /℃ 6
1000
-6
tanδ/μi x10 5
3 0
d g/cm 4.8 -20 20 60 100 140 180 220 260

ρ Ω．cm 600 Temperature(℃)

B-H CURVES
CORE LOSS VS TEMPERATURE
700 5500
5000
600
4500
Flux density B(Gauss)

500 200mT, 100KHz 4000

Pcv(kw/m )

3500
3

400 3000
2500
300
2000
200 200mT, 25KHz 1500
1000
100
500
0 0
0 20 40 60 80 100 120 0.0 5.0 10.0 15.0

Temperature(℃) Magnetic field H(Oe)

INDUCTANCE CHANGE VS
TEMPERATURE
60

40

20
△L/L(%)

-20

-40

-60
-20 0 20 40 60
Temperature(℃)
 YENG TAT ELECTRONICS CO., LTD
No.25, Gongxing St., Shu-lin Dist., New Taipei City 238, Taiwan http://www.yeng-tat.com
F a x : + 8 8 6 - 2 - 2 6 8 9 - 4 8 4 3 Te l : + 8 8 6 - 2 - 2 6 8 9 - 1 4 7 3 e - m a i l :[email protected]

Material JP95
INITIAL PERMEABILITY VS
μi unit 3000 TEMPERATURE
6000

Working Frequency MHz <0.4

5000

Bm Gauss 5200
4000

Permeability(μi)
Br Gauss 1050
3000
Hc Oe 0.16
Tc ℃ 220 2000

-6
αμγ x10 /℃ 3
1000
-6
tanδ/μi x10 8
3 0
d g/cm 4.8 -20 20 60 100 140 180 220 260

ρ Ω．cm 700 Temperature(℃)

B-H CURVES
CORE LOSS VS TEMPERATURE
600 5500
5000
500 4500
Flux density B(Gauss)

4000
Pcv(kw/m )

400 200mT, 100KHz 3500

3

3000
300 2500
2000
200
1500
100 1000
500
0 0
0 20 40 60 80 100 120 0.0 5.0 10.0 15.0
Magnetic field H(Oe)
Temperature(℃)

INDUCTANCE CHANGE VS
TEMPERATURE
40

20
△L/L(%)

-20

-40
-20 0 20 40 60
Temperature(℃)