Review

Miniature Microwave Notch Filters and Comparators

Based on Transmission Lines Loaded with Stepped
Impedance Resonators (SIRs)
Lijuan Su *,† , Jordi Naqui † , Javier Mata-Contreras and Ferran Martín
Received: 9 November 2015; Accepted: 19 December 2015; Published: 23 December 2015
Academic Editor: Behraad Bahreyni

Centre d’Investigació en Metamaterials per a la Innovació en Tecnologies Electrònica i de

Comunicacions (CIMITEC), Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona,
08193 Bellaterra (Barcelona), Spain; [email protected] (J.N.); [email protected] (J.M.-C.);
[email protected] (F.M.)
* Correspondence: [email protected]; Tel.: +34-93-581-3522; Fax: +34-93-581-2600
† These authors contributed equally to this work.

Abstract: In this paper, different configurations of transmission lines loaded with stepped
impedance resonators (SIRs) are reviewed. This includes microstrip lines loaded with pairs of SIRs,
and coplanar waveguides (CPW) loaded with multi-section SIRs. Due to the high electric coupling
between the line and the resonant elements, the structures are electrically small, i.e., dimensions are
small as compared to the wavelength at the fundamental resonance. The circuit models describing
these structures are discussed and validated, and the potential applications as notch filters and
comparators are highlighted.

Keywords: stepped impedance resonator (SIR); microstrip lines; coplanar waveguides; microwave
notch filter; microwave comparator

1. Introduction
Stepped impedance resonators (SIRs) were proposed in the late 1970s as electrically small
semi-lumped (planar) resonant elements useful for the realization of microwave filters [1–3]. These
resonators are typically (although not exclusively) implemented by means of a tri-section structure
where a narrow strip (high impedance section) is sandwiched between two wide (and hence low
impedance) sections. The typical topology is depicted in Figure 1a, whereas Figure 1b shows the
topology of the folded-SIR. At the fundamental resonance, both topologies exhibit an electric wall
at the bi-section plane of the resonator (indicated in the figures), and there is an electric dipole
moment orthogonal to this plane at such resonance frequency. Thus, both structures can be excited
by means of a time-varying electric field, with a non-negligible component in the direction of the
electric dipole moment. The folded-SIR, however, can be driven not only electrically, but also by
means of a time-varying magnetic field applied orthogonal to the plane of the resonator, since there
is also a magnetic dipole moment in that direction [4]. Folded SIRs are electrically small and can
be useful as an alternative to split ring resonators (SRRs) [5] for the implementation of negative
effective permeability metamaterials [4]. SIRs (including meandered SIRs and multi-section SIRs)
and folded-SIRs have found numerous applications in microwave engineering, where size reduction
has been a due [1–3,6,7].
In most of the previous applications, the resonators are coupled or attached to a host
transmission line. A high level of miniaturization has been achieved in SIR-based coplanar
waveguide (CPW) structures, where elliptic filters [6] and radiofrequency (RF) barcodes (or spectral

Micromachines 2016, 7, 1; doi:10.3390/mi7010001 www.mdpi.com/journal/micromachines

 Micromachines 2016, 7, 1 2 of 10

Micromachines 2015, 6, page–page

signature barcodes) [7] have been demonstrated. In microstrip technology, the so-called stepped
impedance
impedance shuntshunt
stubstub (SISS),
(SISS), consisting
consisting on half
on half ofstructure
of the the structure of Figure
of Figure 1a directly
1a directly in contact
in contact with awith
hosta microstrip
host microstrip line (Figure
line (Figure 1c), be
1c), can canused
be used for implementation
for the the implementation of notch
of notch filters,
filters, andand a detailed
a detailed
analysis
analysis is reported
is reported inin[8].
[8].To
To a first
firstorder
orderapproximation
approximation thethe
SISSSISS
can be
canmodeled as a shunt
be modeled as a connected
shunt
series LC (inductance and capacitance) resonator.
connected series LC (inductance and capacitance) resonator.

(a) (b) (c)

Figure 1. Typical topology of a tri-section stepped impedance resonators (SIR) (a), folded-SIR (b) and
Figure 1. Typical topology of a tri-section stepped impedance resonators (SIR) (a), folded-SIR (b)
stepped impedance shunt stubs (SISS) attached to a microstrip line (depicted in black color) (c).
and stepped impedance shunt stubs (SISS) attached to a microstrip line (depicted in black color) (c).
The symmetry planes (for a and b), corresponding to an electric wall at the fundamental resonance,
The symmetry planes (for a and b), corresponding to an electric wall at the fundamental resonance,
are indicated.
are indicated.

In this paper,
In this we will
paper, we review some of
will review somethe of
applications of transmission
the applications lines loaded
of transmission lineswithloadedSIRs.with
Specifically, the focus is
SIRs. Specifically, theonfocus
asymmetric structures,structures,
is on asymmetric or symmetric structures structures
or symmetric that can be thatmade
can be
asymmetric by appropriately loading the SIRs. We will consider
made asymmetric by appropriately loading the SIRs. We will consider both microstrip and CPW both microstrip and CPW
transmission
transmission lineslines
loadedloadedwithwith
SIRs, andand
SIRs, the the
applications
applicationsinclude dual-band
include dual-band microwave
microwave notch filters
notch filters
andand
comparators
comparators (i.e., structures able to detect defects or abnormalities in samples, as comparedato a
(i.e., structures able to detect defects or abnormalities in samples, as compared to
reference). In Section
reference). In Section 2, the microstrip
2, the microstrip lineline
loaded withwith
loaded a pair of SISS
a pair is analyzed
of SISS is analyzedandand
modeled,
modeled, andand
the the
modelmodelis validated
is validated experimentally.
experimentally. Section 3 deals
Section withwith
3 deals SIR-loaded
SIR-loadedCPWs,CPWs,where twotwo
where different
different
structures are considered: A 5-section SIR-loaded CPW, where the central (wide)
structures are considered: A 5-section SIR-loaded CPW, where the central (wide) section of the 5-SIR section of the 5-SIR
is capacitively
is capacitively coupled
coupled to the CPW,
to the CPW, andandthe the
same samestructure (5-SIR)
structure but but
(5-SIR) directly connected
directly connected to the
to the
central stripstrip
central of the CPW
of the CPWthrough metallic
through vias.vias.
metallic In both cases,
In both the the
cases, 5-SIR is etched
5-SIR in the
is etched backback
in the substrate
substrate
sideside
of the CPW
of the CPW transmission
transmission line.line.
The The
models of both
models structures
of both are are
structures alsoalso
presented andand
presented validated.
validated.
In Section
In Section 4,4,the applicabilityofofthese
the applicability these SIR-based
SIR-based structures
structures to dual-band
to dual-band notchand
notch filters filters and
comparators
comparators is demonstrated. Finally, the main conclusions
is demonstrated. Finally, the main conclusions are highlighted in Section 5. are highlighted in Section 5.

2. Microstrip LineLine
2. Microstrip Loaded withwith
Loaded PairsPairs
of SISSs
of SISSs
Figure 2a depicts
Figure 2a depictsa microstrip
a microstriplineline
section loaded
section loadedwithwith
a pair of SISS.
a pair of SISS. Assuming
Assuming thatthat
the the
microstrip lineline
microstrip is electrically short,
is electrically andand
short, thatthat
there is a is
there high impedance
a high impedance contrast
contrastbetween the the
between narrow
narrow
andand
wide sections
wide sectionsof of
the
theSISS,
SISS,the
thestructure
structure can be bedescribed
describedby bythe
the lumped
lumped element
element equivalent
equivalent circuit
circuit shown
shown in Figure
in Figure 2b The
2b [9]. [9]. model
The model considers
considers the general
the general case ofcase of an asymmetric
an asymmetric structure,
structure, where the
where
SISSthe
areSISS are modeled
modeled by the inductances
by the inductances L1,2 andL1,2theand the capacitances
capacitances C1,2the
C1,2 , and , and the microstrip
microstrip line is
line section
section is accounted
accounted for byfor
theby the capacitance
capacitance C andCthe andinductance
the inductanceL. TheL.coupling
The coupling (magnetic)
(magnetic) between
between the two
the SISS
two SISS
cannotcannot be neglected
be neglected and isand is modeled
modeled throughthrough the mutual
the mutual inductance
inductance M (such M (such coupling
coupling is
is negative
negative
because because the currents
the currents in the inductances
in the inductances flow in directions).
flow in opposite opposite directions).
Losses areLosses are not in
not considered
considered
the model.in the model.
The transmission zeros of the structure are given by those frequencies that null the reactance of
the series branch, that is: ?
2 A˘ B
ω˘ “ (1)
D
with
A “ L1 C1 ` L2 C2

B “ pL1 C1 ´ L2 C2 q2 ` 4C1 C2 M2

(a) (b)
Figure 2. (a) Microstrip line section loaded with a pair of SISS; (b) lumped element equivalent circuit model.
2
structures are considered: A 5-section SIR-loaded CPW, where the central (wide) section of the 5-SIR
is capacitively coupled to the CPW, and the same structure (5-SIR) but directly connected to the
central strip of the CPW through metallic vias. In both cases, the 5-SIR is etched in the back substrate
side of the CPW transmission line. The models of both structures are also presented and validated.
InMicromachines
Section 4,2016,the7, 1applicability of these SIR-based structures to dual-band notch filters 3andof 10
comparators is demonstrated.
Micromachines 2015, 6, page–page Finally, the main conclusions are highlighted in Section 5.

2. Microstrip Line Loaded with Pairs “ 2C1 C2 pL1 L2 ´ M2 q

ofDSISSs
The transmission zeros of the structure are given by those frequencies that null the reactance of
the series branch,Equation
Expression that is: (1) can be easily inferred from the transformed model of Figure 2b, depicted
Figure 2a depicts a microstrip line section loaded with a pair of SISS. Assuming that the
in Figure 3a. If the structure
microstrip line is electrically is symmetric
short, (i.e., Lis1 a=high
and that there L2 ” Lr and C1 = C2 ” Cr ), the mathematical
2 A ± B impedance contrast between the narrow
SISS, the structureωcan ± = be described by the lumped element equivalent
solutions
and of Equation
wide sections (1) are:
of the (1)
D1
circuit shown in Figure 2b [9]. The model ω˘ “ considers
a the general case of an asymmetric structure, (2)
with the SISS are modeled by the inductances LpL
where r ¯ |M|q ¨ Cr
1,2 and the capacitances C1,2, and the microstrip line

sectionHowever, is not
ω´ for
is accounted by actually a physical
the capacitance C =solution
A and L1the Lsince
C1 +inductance it nulls thecoupling
L. The denominator of the between
(magnetic) reactance
2C2
(obviously,
the for thebesymmetric
two SISS cannot neglected case
and isonly one notch
modeled through at the
the mutual
fundamental frequency
inductance ofcoupling
M (such the SISSisis
2
expected,because
negative as results from
the the circuit
currents in the = (inductances
Bmodel L1C 1 − L2 C 2 in
depicted + 4Cin
)flow
Figure1C3b).M 2Thus, directions).
2opposite the mutual coupling between
Losses are not
the two inductors
considered of two SISSs has the effect of increasing the2 notch frequency (symmetric case).
in the model.
D = 2C1C2 ( L1L2 − M )
Expression Equation (1) can be easily inferred from the transformed model of Figure 2b,
depicted in Figure 3a. If the structure is symmetric (i.e., L1 = L2 ≡ Lr and C1 = C2 ≡ Cr), the mathematical
solutions of Equation (1) are:

1
ω± = (2)
( Lr  M ) ⋅ Cr
However, ω− is not actually a physical solution since it nulls the denominator of the reactance
(a) (b)
(obviously, for the symmetric case only one notch at the fundamental frequency of the SISS is
Figure
expected,2. (a)asMicrostrip
Figure 2. results line section
from
(a) Microstripthe loaded
linecircuit with
sectionmodela pair
loaded of SISS;
depicted
with a pair (b)ofFigure
in lumped element
3b).
SISS; (b) equivalent
Thus,
lumped circuit
the mutual
element model.
coupling
equivalent
between
circuitthe two inductors of two SISSs has
model. 2 the effect of increasing the notch frequency
(symmetric case).

(a) (b)
Figure 3. (a) Equivalent circuit model to that of Figure 2b; (b) Equivalent circuit model for the
Figure 3. (a) Equivalent circuit model to that of Figure 2b; (b) Equivalent circuit model for the
symmetric case.
symmetric case.

The validation of the model has been done by comparing full wave electromagnetic simulations
with The validation
circuit of the
simulations model
with has been
extracted done by of
parameters comparing
different full wave electromagnetic
structures. simulations
To extract the parameters,
with circuit simulations with extracted parameters of different structures. To
we have first considered microstrip lines loaded with a single SISS, following a procedure reportedextract the parameters,
we[9],
in haveandfirst considered
similar to that microstrip
reported inlines [10].loaded
Then M with
hasabeen
single SISS, following
obtained a procedure
in the structures loadedreported
with
in [9],ofand
pairs SISSsimilar to that
by curve reported
fitting. in [10]. Then
The agreement M has
is good, been obtained
as depicted in the
in Figure structures
4, where loaded with
the responses of
pairs different
three of SISS by curve fitting.
structures The agreement
are presented. One ofissuch
good, as depicted
structures in Figure 4,
is symmetric, where the
whereas the other
responses
two
of three
are obtaineddifferent
from structures
the first one arebypresented.
increasingOne of such structures
or decreasing one of theiscapacitances,
symmetric, whereas the other
as indicated. The
two are obtained from the first one by increasing or decreasing one of the capacitances,
responses of the microstrip lines loaded with single SISS are also indicated, so that the positive shift as indicated.
Thethe
of responses of the microstrip
transmission zero for the lines loaded with
symmetric single SISS
structure can are
be also indicated,Note
appreciated. so thatalsothethat
positive
the
shift of the transmission zero for the symmetric structure can be appreciated.
agreement with the responses of the fabricated structures is also good (except by the effect of losses, Note also that the
agreement with the responses of the fabricated structures
not considered in the model, and fabrication related tolerances). is also good (except by the effect of losses,
not considered in the model, and fabrication related tolerances).

3
Micromachines 2016, 7, 1 4 of 10
Micromachines 2015, 6, page–page

(a)
Micromachines 2015, 6, page–page

(b) (a)

(b)

(c)

(c)
Figure4.4.(a)(a)
Figure Photograph
Photograph of the offabricated
the fabricated SISS-loaded
SISS-loaded transmission
transmission lines, andlines, and transmission
transmission coefficient
coefficient corresponding to the lossless electromagnetic
corresponding to the lossless electromagnetic and circuit simulations for a microstrip and circuit simulations for a microstrip
line loaded line
loaded (b) with a single SISS (not fabricated), and (c) with a pair of SISSs
(b) with a single SISS (not fabricated), and (c) with a pair of SISSs (fabricated and shown in Figure 4a). (fabricated and shown in
Figure 4. (a) Photograph of the fabricated SISS-loaded transmission lines, and transmission
Figure
In 4a). In (c), measurements
(c),coefficient
measurements are included. are
Theincluded.
dimensions The(indimensions
reference to(inFigure
reference
2a)aareto W Figure
= 1.83 2a) are
corresponding to the lossless electromagnetic and circuit simulations for microstrip line mm,
W = 1.83
l = 15.9 mm,
mm,(b) l
l1 = = 15.9 mm,
l2 =a lsingle l 1 =
3 = l4 SISS
l 2
= 2.6(not= l3
mm, = l 4 = 2.6 mm,
∆l1 = ˘0.5 Δl 1 = ±0.5 mm,
W 1 a=pair W
W 3 of1 = W 3 = 5.5 mm,
W 2 = WandW 2 = W 4 = 250 µm.
loaded with fabricated), andmm,
(c) with = 5.5
SISSsmm, (fabricated 4 = shown
250 µm. in The
The substrate
substrate
Figure
is
is Rogers Rogers
4a). In RO4003C
RO4003C with
with considered
(c), measurements
considered
are included.
dielectric
dielectric constant
constant εr (in
The dimensions
ε
= 3.1,r = 3.1, thickness
thickness
reference
h
h = 812.8
to Figure
= 812.8
2a) µm,
µm,
are and
and loss
loss tangent tangent
W = 1.83tanδ
mm, = tanδ = 0.0021.
l =0.0021.
15.9 mm, The The
l1 = circuit circuit
l2 = l3 = lvalues values are L =
L 1==1.80
are Δl
4 = 2.6 mm,
1.80 nH,
mm, C
±0.5 nH, W= C =
1 =0.57
0.57
W3 =pF, pF, L =2.46
Lr =2.46
5.5 mm, r nH,
W4 =C250
W2 = nH, C =
r =µm.
r 0.65 pF,
0.65 pF,
±ΔCrrThe
˘∆C ==±0.15C
˘0.15C r ==
substrate r ±0.10
is˘0.10 pF,pF,
Rogers and
RO4003C
andMM = with
−0.31
= ´0.31 nH.nH.
Reprinted
considered with
dielectric
Reprinted permission
constant
with εr = 3.1,
permission from [9].[9].h = 812.8 µm,
thickness
from
and loss tangent tanδ = 0.0021. The circuit values are L = 1.80 nH, C = 0.57 pF, Lr =2.46 nH, Cr = 0.65 pF,
3. CPW
3. CPW Loaded
Loaded with
±ΔCr = ±0.15C
withr =5-SIRs
±0.10 pF, and M = −0.31 nH. Reprinted with permission from [9].
5-SIRs
Figure
3. CPW 5a
Figure 5a depicts
Loaded
depictswith aa CPW
CPWline
5-SIRs linesection
sectionloaded
loadedwith witha 5S-SIR,
a 5S-SIR, etched
etched in the back
in the backsubstrate
substrate side.side.
The
equivalent circuit model is depicted in Figure 5b [11], where L and C are the inductance and
The equivalent
Figure 5a circuit
depicts model
a CPW isline
depicted
section in Figure
loaded with5ba 5S-SIR, etchedLinand
[11], where C are
the back the inductance
substrate side. The and
capacitance of the CPW line section, and L 1,2 and C1,2 describe the inductances and capacitances of the
L1,2 and
capacitance
equivalent of the CPW
circuit modellineissection,
depictedand in Figure 5b C[11],
1,2 describe
where L the and inductances and capacitances
C are the inductance and
middle
of and external
thecapacitance
middle and sections,
external
of the CPW line respectively,
sections,
section, and L1,2of
respectively, theC1,2
and 5S-SIR.
ofdescribe The
the 5S-SIR.the5-SIR
Theis5-SIR
inductances electrically coupledcoupled
is electrically
and capacitances tothe
of the line
to
through
middle
the line C c ,
through the broadside
and external capacitance
Cc , the sections,
broadside between
respectively,
capacitance the
of the central
5S-SIR.the
between strip
Thecentral of the
5-SIR isstrip CPW
electrically and the
of thecoupled
CPW andcentral
to the section
theline
central of
the 5S-SIR.
sectionthrough
of the Finally,
C5S-SIR. the magnetic
c, the broadside
Finally, coupling
capacitance
the magnetic between
between the
the central
coupling two
between inductances
strip of the
the twoCPW of
andthethe
inductances resonator
central
of the is accounted
section of
resonator is
accounted for by M (negative, for the reasons explained in reference to the SISS-loaded microstripofline
for by
theM (negative,
5S-SIR. Finally, for
the the reasons
magnetic explained
coupling in
between reference
the two to the
inductances SISS-loaded
of the microstrip
resonator is line
accounted the
for bysection).
previous M (negative, Sincefor thetheconsidered
reasons explained
structure in reference to theshort,
is electrically SISS-loaded microstrip to
it is reasonable line of the to a
assume,
of the previous section). Since the considered structure is electrically short, it is reasonable to assume,
first previous
order section).
approximation, Since the considered
thatthatthetheslot structure
mode is electrically short, it is reasonable to assume, to a
to a first order approximation, slot modeisisnot notgenerated
generated(the (the ports
ports in the electromagnetic
in the electromagnetic
first order
simulation and approximation,
and the connectors that the
in the slot mode
measurement is not generated
act as asairair (the
bridges, ports in the
effectively electromagnetic
connecting the two
simulation
simulation and thetheconnectors
connectorsin in the measurement
the measurement actact
as air bridges,bridges, effectively
effectively connecting connecting
the two the
ground
two groundplane regions).
plane regions).
ground plane regions).

(a) (b)
(a) (b)
Figure 5. (a) Coplanar waveguide (CPW) loaded with a 5S-SIR and (b) circuit model. Relevant
Figure 5. (a) Coplanar waveguide (CPW) loaded with a 5S-SIR and (b) circuit model. Relevant
Figure 5. (a) Coplanar
dimensions waveguide (CPW) loaded with a 5S-SIR and (b) circuit model. Relevant
are indicated.
dimensions are indicated.
dimensions are indicated.

4
4
Micromachines 2015, 6, page–page

In this case, the transmission zero frequencies are given by Equation (1) with:
Micromachines 2016, 7, 1 5 of 10
A = C1C 2 ( L1 + L2 − 2 M ) + C c ( L1C1 + L2 C 2 )

B = C12C22 ( L1zero
In this case, the transmission − 2M ) 2 + Cc2are
+ L2 frequencies 2
1 − L2C2 ) + 2Cc C1C2 ×
(L1Cgiven by Equation (1) with:
{L C (L − AL “− C2M1 C)2pL
1 1 1 2 + L C ( L − L − 2M ) + 2M (C + C
2 2 2 1
1 ` L2 ´ 2Mq ` Cc pL1 C1 ` L2 C2 q
2
1 2 }
+ Cc )

D = 2C C C ( L L − M 2 )
c 21 2 2 1 2
B “ C12 C22 pL1 ` L2 ´ 2Mq ` Cc pL1 C1 ´ L2 C2 q2 ` 2Cc C1 C2 ˆ
2
(
If the structureLis1 Csymmetric
1 pL1 ´ L2 ´ 2MqL1`= LL22C≡2 pL
(i.e., ´ LC
Lr 2and 1 1´=2Mq Cr2M
C2 ≡ ` 1 ` C2 ` Cc q solutions are of
), thepCmathematical
the form:
D “ 2Cc C1 C2 pL1 L2 ´ M2 q
1
ω + =L1 = L2 ” Lr and C1 = C2 ” Cr ), the mathematical solutions are
If the structure is symmetric (i.e.,
of the form: Cc C r (3a)
( Lr − M ) 1⋅
ω` “ c Cc +C2CCr (3a)
c r
pLr ´ |M|q ¨
Cc ` 2Cr
1
ω− = 1 (3b)
( Lr + M ) ⋅ Cr
ω´ “ a (3b)
pLr ` |M|q ¨ Cr
However,
However,ωω −´is is
not actually
not actuallya physical
a physical solution
solution since
sinceit itnulls
nullsthe
thedenominator
denominatorofofthe thereactance.
reactance.
Thus,
Thus,the themutual
mutualcoupling
couplingbetweenbetweenthe thetwo
twoinductors
inductorsofofthe thetwotwo5-SIR
5-SIRhashasthe
theeffect
effectofofincreasing
increasing
the
thenotch
notchfrequency
frequencyfor forthe
thesymmetric
symmetriccase,
case,i.e.,
i.e.,a abehavior
behavioridentical
identicaltotothe theone
oneofofthethemicrostrip
microstripline line
loaded
loadedwith witha apair
pairofofSISS.
SISS.
AAvariation
variationofofthetheprevious
previousCPW CPWstructure
structureconsists
consistsofofa adirect
directconnection
connection(through
(throughvias)vias)ofofthe
the
5-SIR to the central strip of the CPW, as depicted in Figure 6. This effectively
5-SIR to the central strip of the CPW, as depicted in Figure 6. This effectively shorts the capacitance shorts the capacitance
CCc, cand
, andthetheresulting
resultingcircuit
circuitmodel
modelisisidentical
identicaltotothe theone
onedepicted
depictedininFigureFigure2b.2b.
The
Thevalidation
validationofofthethemodels
modelsofofthese
theseCPW CPWloaded loadedstructures
structureshas hasbeen
beenalsoalsocarried
carriedout outby by
comparison
comparisonbetween betweenthe thefrequency
frequencyresponses
responsesinferred
inferredfromfromfull fullwave
waveelectromagnetic
electromagneticsimulation
simulation
and
andthe theresponses
responsesderived
derivedfrom fromcircuit
circuitsimulation
simulationwith withthe
theparameters
parametersconveniently
convenientlyextracted.
extracted.For For
the structure of Figure 5a the parameter extraction method is more complex
the structure of Figure 5a the parameter extraction method is more complex (as compared to the one (as compared to the one
ofofthetheprevious
previoussection)
section)since
sincewe wehave
haveananadditional
additionalparameter,
parameter,namely,
namely,CCc c(the
(thedetails
detailscan
canbebefound
found
inin[11]).
[11]).Indeed,
Indeed, the procedure
procedurefirstfirstconsiders
considersthe the structure
structure with with vias,
vias, so that
so that allparameters,
all the the parameters,except
except
Cc , areCdetermined;
c, are determined;
then Cthen Cc is determined
c is determined by curveby curve fitting.
fitting.

(a) (b)
Figure 6. (a) CPW loaded with a 5S-SIR directly in contact to the central strip of the CPW through
Figure 6. (a) CPW loaded with a 5S-SIR directly in contact to the central strip of the CPW through
metallic vias, and (b) circuit model.
metallic vias, and (b) circuit model.

The three considered structures: For model validation are depicted in Figure 7 (dimensions and
The three considered structures: For model validation are depicted in Figure 7 (dimensions and
substrate parameters are indicated in the caption). One is symmetric and the other two asymmetric,
substrate parameters are indicated in the caption). One is symmetric and the other two asymmetric,
where the two asymmetric structures are derived from the symmetric one by increasing or
where the two asymmetric structures are derived from the symmetric one by increasing or decreasing
the area of one of the external patch capacitors, while the other external patch capacitors for these two
5
asymmetric structures keeps the same dimensions as in the symmetric one. The element values of the
Micromachines 2015, 6, page–page
Micromachines 2015, 6, page–page

decreasing
Micromachinesthe area
2016, 7, 1 of one of the external patch capacitors, while the other external patch capacitors 6 of 10
decreasing the area of one of the external patch capacitors, while the other external patch capacitors
for these two asymmetric structures keeps the same dimensions as in the symmetric one. The
for these two asymmetric structures keeps the same dimensions as in the symmetric one. The
element values of the circuit model for the symmetric structure are L = 3.49 nH, C = 1.21 pF,
elementmodel
valuesforofthe thesymmetric
circuit model for the
are Lsymmetric
= 3.49 nH,structure
C = 1.21 are
pF, L r ==of
3.49 nH, Cr == 1.21
2.65 pF,
Lcircuit structure
r = 4.20 nH, Cr = 2.65 pF, M = −1.08 nH, and Cc = 3.62 pF. The comparison
4.20
the nH,
electromagnetic
Lr == 4.20
M ´1.08nH,nH,Crand
= 2.65C c pF,
= M
3.62 =
pF. −1.08
The nH, and
comparisonCc =of3.62
the pF. The comparison
electromagnetic of
simulation the electromagnetic
(using Keysight
simulation (using Keysight Technologies Momentum, Keysight Technologies Inc.，Santa Rosa, CA,
simulation (using
Technologies KeysightKeysight
Momentum, Technologies Momentum,
Technologies Inc., Keysight
Santa Technologies
Rosa, CA, USA) Inc.，Santa
and Rosa, CA,
circuit simulation
USA) and circuit simulation of the symmetric structure is shown in Figure 8 (the measurement data
USA)the and circuit simulation ofshown
the symmetric structure is shown in data
Figure 8 (the measurement data
isofincluded
symmetric
as well),structure
where isgood in Figurecan
agreement 8 (the measurement
be appreciated, is included
pointing as well),of
out the validity where
the
is included
good as well),
agreement can bewhere good agreement
appreciated, pointing canthe
out bevalidity
appreciated,
of the pointing
proposed out the validity of the
model.
proposed model.
proposed model.

(a) (b) (c)

(a) (b) (c)
Figure
Figure 7. Considered
Considered5S-SIR-loaded
5S-SIR-loadedCPWs: CPWs:(a) (a)symmetric;
symmetric;(b) (b)asymmetric
asymmetricwith withone onecapacitance
capacitance
Figure 7. 7. Considered 5S-SIR-loaded CPWs: (a) symmetric; (b) asymmetric with one capacitance
larger;
larger; (c)
(c)asymmetric
asymmetric with
with oneonecapacitance
capacitancesmaller.
smaller. Dimensions
Dimensionsare (in
are reference
(in reference to Figure
to 5): for
Figure 5):
larger; (c) asymmetric with one capacitance smaller. Dimensions are (in reference to Figure 5): for
CPW
for CPWlines: l
lines:= 4.5
l = mm,
4.5 mm,W =
W 6= mm
6 mm andandG= G=0.960.96mm,
mm, corresponding
corresponding to to 50
50 Ω.
Ω. For
For 5S-SIR:
5S-SIR:
CPW lines: l = 4.5 mm, W = 6 mm and G= 0.96 mm, corresponding to 50 Ω. For 5S-SIR:
(a) W1 ==4.5 4.5mm, l1 = 33mm, W3 ==4.5 mm, l3l ==33mm, W2 ==W 4 = 0.2 mm, l2 = l4 = 4 mm, W5 = 5 mm,
(a) W
(a) W11 = 4.5 mm, ll11 =
mm, mm, W
= 3 mm, W33 = 4.5
4.5 mm, mm, W
mm, l33 = 3 mm, W22 = W
W44 == 0.2 mm, ll22 =
0.2 mm, = ll44 == 44 mm,
mm, W W55 == 55 mm,
mm,
l5l = =4 4mm. For (b) W W1 = l1 = 5 mm and for (c) W1 = l1 = 2 mm, with the other dimensions the same as in
l W l
l5 = 4 mm. For (b) W1 = l1 = 5 mm and for (c) W1 = l1 = 2 mm, with the other dimensions the same as as
5 mm. For (b) 1 = 1 = 5 mm and for (c) 1 = 1 = 2 mm, with the other dimensions the same in
(a). TheTheconsidered substrate (Rogers RO3010)
RO3010)has has
thickness of hof
= 0.635 mmmm andand dielectric constant of
in
(a).(a). considered
The considered substrate
substrate (Rogers
(Rogers RO3010) has thickness of h =h0.635
thickness = 0.635
mm and dielectric
dielectric constant
constant of
εof
r = 11.2.
ε = 11.2.
εr = r11.2.

Figure 8. Electromagnetic simulation, circuit simulation and measurement response for the
Figure 8.8.Electromagnetic
Figure Electromagnetic simulation,
simulation, circuit
circuit simulation
simulation and measurement
and measurement responseresponse for the
for the symmetric
symmetric structure of Figure 7a. Reprinted with permission from [11].
symmetricofstructure
structure Figure 7a.ofReprinted
Figure 7a.with
Reprinted with permission
permission from [11]. from [11].
For the asymmetric cases, the small external patch inductance and capacitance of the 5-SIR have
For the asymmetric cases, the small external patch inductance and capacitance of the 5-SIR have
been found
For thetoasymmetric
be 4.30 nH and 0.97
cases, thepF, andexternal
small the big external patch inductance
patch inductance and capacitance
and capacitance of 5-SIR
of the 5-SIR have
been found to be 4.30 nH and 0.97 pF, and the big external patch inductance and capacitance of 5-SIR
have
beenbeen
foundfound
to beto4.30
be 4.26 nH and
nH and 0.97 4.53 pF, the
pF, and whereas the mutual
big external patchinductances
inductancefor andthese two cases
capacitance of have
5-SIR
have been found to be 4.26 nH and 4.53 pF, whereas the mutual inductances for these two cases have
been
havefound
been to be −1.19
found to benH andnH
4.26 −1.06
andnH respectively,
4.53 pF, whereas i.e.,the
very similarinductances
mutual values, andforalso similar
these twotocases
the
been found to be −1.19 nH and −1.06 nH respectively, i.e., very similar values, and also similar to the
value corresponding to the symmetric structure. This indicates that M is scarcely dependent
have been found to be ´1.19 nH and ´1.06 nH respectively, i.e., very similar values, and also similar on the
value corresponding to the symmetric structure. This indicates that M is scarcely dependent on the
dimensions
to the valueofcorresponding
the patch capacitances of thestructure.
to the symmetric 5S-SIR, as expected.
This indicatesThethat resulting middle
M is scarcely patch
dependent
dimensions of the patch capacitances of the 5S-SIR, as expected. The resulting middle patch
capacitances of small and big structures are 3.61 pF and 3.75 pF respectively. The agreement
on the dimensions of the patch capacitances of the 5S-SIR, as expected. The resulting middle patch between
capacitances of small and big structures are 3.61 pF and 3.75 pF respectively. The agreement between
the electromagnetic
capacitances of small simulation, circuit simulation
and big structures are 3.61 pFand
andmeasurement for the The
3.75 pF respectively. twoagreement
asymmetric cases
between
the electromagnetic simulation, circuit simulation and measurement for the two asymmetric cases
(Figures 9 and 10) is reasonable.
the electromagnetic simulation, circuit simulation and measurement for the two asymmetric cases
(Figures 9 and 10) is reasonable.
For the
(Figures structures
9 and with vias, good agreement between circuit and electromagnetic simulation
10) is reasonable.
For the structures with vias, good agreement between circuit and electromagnetic simulation
has been
For also obtained, with
the structures as Figure
vias, 11 reveals
good (these between
agreement structures haveand
circuit not electromagnetic
been fabricated).simulation has
has been also obtained, as Figure 11 reveals (these structures have not been fabricated).
been also obtained, as Figure 11 reveals (these structures have not been fabricated).
6
6
Micromachines 2016, 7, 1 7 of 10
Micromachines 2015, 6, page–page
Micromachines 2015, 6, page–page
Micromachines 2015, 6, page–page

Figure 9. Electromagnetic
Electromagneticsimulation,
simulation, circuit
circuit simulation
simulation and
and measurement
measurement response
response for the
Figure
Figure 9.9. Electromagnetic simulation, circuit simulation and measurement response for
for the
the
asymmetric
asymmetric structure
structure of
Figure 9. Electromagnetic
of Figure
Figure 7b.
7b. Reprinted
simulation, with
circuit
Reprinted with permission
simulation
permission from [11].
and [11].
from measurement response for the
asymmetric structure of Figure 7b. Reprinted with permission from [11].
asymmetric structure of Figure 7b. Reprinted with permission from [11].

Figure 10. Electromagnetic simulation, circuit simulation and measurement response for the
Figure 10.
10. Electromagnetic
Electromagnetic simulation,
simulation, circuit
circuit simulation and
simulationfrom
and measurement
measurement response for
for the
Figure
asymmetric
Figure 10. structure of Figuresimulation,
Electromagnetic 7c. Reprinted with permission
circuit simulation measurement response
and [11]. response for the
the
asymmetric
asymmetric structure of Figure 7c. Reprinted with permission from [11].
asymmetricstructure
structureof
ofFigure
Figure7c.
7c.Reprinted
Reprintedwith
withpermission
permissionfrom
from[11].
[11].

(a) (b) (c)

(a) (b) (c)
(a) (b) (c)
Figure 11. Electromagnetic simulation, and circuit simulation of the structures of Figure 7 with
Figure 11. Electromagnetic simulation, and circuit simulation of the structures of Figure 7 with
vias connecting
Figure the central patch
11. Electromagnetic of theand
simulation, 5-SIR andsimulation
circuit the centralofstrip of the CPW
the structures transmission
of Figure 7 with
Figure 11. Electromagnetic
vias connecting the central simulation, and
patch of the circuit
5-SIR andsimulation of strip
the central the structures of Figure
of the CPW 7 with
transmission
line: (a) symmetric; (b) asymmetric with one capacitance larger; (c) asymmetric
vias connecting the central patch of the 5-SIR and the central strip of the CPW transmission with one
vias
line: connecting the central
(a) symmetric; patch of the
(b) asymmetric 5-SIR
with oneand the centrallarger;
capacitance strip (c)
of the CPW transmission
asymmetric with one
capacitance smaller.
line: (a) symmetric; (b) asymmetric with one capacitance larger; (c) asymmetric with one
line: (a) symmetric;
capacitance smaller. (b) asymmetric with one capacitance larger; (c) asymmetric with one
capacitance smaller.
capacitance smaller.
4. Application to Microwave Notch Filters and Comparators
4. Application to Microwave Notch Filters and Comparators
4. Application
According to to Microwave
the results ofNotch Filters and
the previous Comparators
subsections, the symmetric structures can be used as
4. Application Microwave Notch Filters and Comparators
According to the results of the previous subsections, the symmetric structures can be used as
singleAccording
broadbandtonotch filters.ofDual-band
the results the previousfunctionality is achieved
subsections, by asymmetrically
the symmetric structures canloading
be used the as
single broadband
According notch
to the filters.
results of Dual-band
the previous functionality
subsections,is the
achieved by asymmetrically
symmetric structures can loading
be used the as
line,
singleand expression
broadband notchEquation
filters.(1) can be used
Dual-band to set the
functionality position of
is achieved by the notches. Note
asymmetrically that the
loading the
line, and
single expression
broadband notch Equation (1) can be functionality
filters. Dual-band used to set the position by
is achieved of asymmetrically
the notches. Note that the
loading the
SISS-loaded microstripEquation
line, and expression line and the (1) 5-SIR-loaded
can be used CPW to setwithout vias exhibit
the position of thea wideband
notches. Notenotchthat andthe a
SISS-loaded
line, microstrip
and expression line and(1)
Equation thecan 5-SIR-loaded
be used toCPW without
set the vias exhibit
position a wideband
of the notches. Notenotchthatand thea
very narrow notch, whereas for the 5-SIR-loaded CPW with vias, the
SISS-loaded microstrip line and the 5-SIR-loaded CPW without vias exhibit a wideband notch and a width of both notches is
very narrowmicrostrip
SISS-loaded notch, whereas line andforthethe 5-SIR-loaded
5-SIR-loaded CPWCPW with vias,
without the width
vias exhibit of both notch
a wideband notches and is
comparable.
very narrowThe reason
notch, is that for
whereas in the theCPW with viasCPW
5-SIR-loaded there with
is notvias,
a coupling
the widthcapacitance
of both (C c) in the
notches is
comparable. The reason is that in the CPW with vias there is not a coupling
a very narrow notch, whereas for the 5-SIR-loaded CPW with vias, the width of both notches is capacitance (C c ) in the
shunt branch,The
comparable. andreason
this favors
is that sensitivity
in the CPW(also withinfluenced
vias there is bynotthea mutual
couplinginductance,
capacitanceM). (Cc)Thus,
in the
shunt branch,The
comparable. andreason
this favors
is that sensitivity
in the CPW (also
withinfluenced
vias thereby the amutual
is not couplinginductance,
capacitance M).(CThus,c ) in
depending
shunt branch,on the
andapplication
this favors(i.e., notch width
sensitivity (also requirement),
influenced byone the structure or the otherM).
mutual inductance, may Thus,be
depending
the on theand
shunt branch, application
this favors (i.e.,sensitivity
notch width
(alsorequirement),
influenced byone the structure or the other
mutual inductance, M).may Thus, be
more convenient.
depending on the application (i.e., notch width requirement), one structure or the other may be
more convenient.
more Inconvenient.
order to use the structures as microwave comparators, the SIR or SISS loaded lines must be
In order to use the structures as microwave comparators, the SIR or SISS loaded lines must be
symmetric. If line
In order to use loading (dielectric
the structures or metallic)comparators,
as microwave is symmetric,the then
SIRthe structure
or SISS loadedis lines
expected
must to be
symmetric. If line loading (dielectric or metallic) is symmetric, then the structure is expected to
exhibit a single
symmetric. notch
If line in the frequency
loading (dielectric response,
or metallic)whereas if the loading
is symmetric, is asymmetric,
then the structure istwo notchesto
expected
exhibit a single notch in the frequency response, whereas if the loading is asymmetric, two notches
exhibit a single notch in the frequency response, whereas if the loading is asymmetric, two notches
7
7
7
 Micromachines 2016, 7, 1 8 of 10

depending on the application (i.e., notch width requirement), one structure or the other may be
more convenient.
In order to use the structures as microwave comparators, the SIR or SISS loaded lines must be
symmetric. If line
Micromachines 2015, loading (dielectric or metallic) is symmetric, then the structure is expected to exhibit
6, page–page
a single notch in the frequency response, whereas if the loading is asymmetric, two notches separated
a distance adepending
separated distance on the level of
depending onasymmetry
the level are of expected.
asymmetry Thus, arethe reportedThus,
expected. structures
the are useful
reported
to determine differences between a sample under test (SUT) and
structures are useful to determine differences between a sample under test (SUT) and a reference a reference sample (i.e., compare
the two(i.e.,
sample samples).
compare To demonstrate
the two samples). the potential of these structures
To demonstrate the potentialas comparators,
of these the symmetric
structures as
structure of Figure
comparators, 7a has been
the symmetric loaded
structure of with
Figure a dielectric
7a has been load (consisting
loaded of a smallload
with a dielectric piece of Rogers
(consisting
ofRO3010
a smallsubstrate
piece of with RogerstheRO3010
copper removed
substrate from with both substrate
the copper sides) placed
removed from both on top of onesides)
substrate of the
patch capacitances.
placed on top of one of The themeasured response, shown
patch capacitances. in Figureresponse,
The measured 12, exhibits two in
shown notches,
Figure indicative
12, exhibits of
the notches,
two asymmetric loading.ofThen,
indicative we have repeated
the asymmetric loading.the experiment
Then, we haveby using the
repeated thesame piece of by
experiment substrate
using
butsame
the keepingpiecetheofmetal layers
substrate but(metallic
keepingloading).
the metal The measured
layers (metallicresponse
loading). is also
Theincluded
measured in Figure
response 12,
iswhere it can be in
also included seen that the
Figure 12, depth
whereof it the
canfirst notchthat
be seen is superior
the depth (asofcompared to dielectric
the first notch loading),
is superior (as
since the structure is more sensitive to the effects of a metallic layer
compared to dielectric loading), since the structure is more sensitive to the effects a metallic layerplaced on top of one of the patch
capacitances.
placed on top The of onereason is that
of the adding
patch a metal increases
capacitances. The reason moreiseffectively
that adding the acapacitance
metal increasesof the patch,
more
as compared
effectively theto dielectric loading.
capacitance of the patch, as compared to dielectric loading.
Assensors,
As sensors,the theSIR-based
SIR-basedstructures
structuresdiscussed
discussedin inthis
thispaper
paperbelongbelongtotothe thecategory
categoryofofresonance
resonance
frequency splitting
frequency splitting sensors.
sensors. However,
However,there thereisisalsoalsoanother
anothertype typeofofsensing
sensingstructures
structures based based on on
symmetryproperties:
symmetry properties:Coupling
Couplingmodulated
modulatedresonance
resonancebased basedsensors
sensors[12]. [12].In In
thisthis
case,case,
thethe sensor
sensor is
is based
based on aon a transmission
transmission line loaded
line loaded with with a single
a single (symmetric)
(symmetric) resonant resonant
element, element, the symmetry
the symmetry plane
ofplane of the
the line andline and resonator
resonator are aligned,
are aligned, and these and theseare
planes planes are of different
of different electromagnetic
electromagnetic nature. One nature.
of
One of them is a magnetic wall, and the other one is an electric
them is a magnetic wall, and the other one is an electric wall. Under these conditions, the resonator iswall. Under these conditions,
the coupled
not resonatorto is not
the coupled to the line.
line. However, byHowever,
truncating by symmetry,
truncating symmetry,
line to resonatorline to resonator
couplingcoupling arises,
arises, producing
producing a notch in a notch in the transmission
the transmission coefficient,coefficient,
and the depth and of thethis
depth
notch ofdepends
this notch on depends
the level of on
the level of asymmetry, since it determines the coupling level.
asymmetry, since it determines the coupling level. Several sensing structures based on these Several sensing structures based on
these principles
principles have been haveproposed
been proposed(several (several
of them of them
by thebyauthors)
the authors) [13–17]. [13–17]. For instance,
For instance, split
split ring
ring resonant
resonant elementselements or complementary
or complementary split have
split rings rings beenhaveusedbeenfor used for sensing
sensing purposes.purposes.
By using By SIRs,
using
SIRs,
the the sensors
sensors are small are small (this extends
(this extends also to also to notch
notch filters)filters)
sincesince the coupling
the coupling withwiththe thehosthostlineline
is
is broadside.
broadside. ThisThis is the
is the main main advantage
advantage overover other
other sensors
sensors of ofthisthistypetypebased
basedon onother
otherresonant
resonant
elements. Also,
elements. Also,ground
groundplane planeetching
etchingisisavoided
avoided(contrary
(contrarytotosensors sensorsbased basedon on complementary
complementary
resonantelements).
resonant elements).

(a) (b)
Figure 12. (a) Measured responses of the structure of Figure 7a with asymmetric dielectric loading
Figure 12. (a) Measured responses of the structure of Figure 7a with asymmetric dielectric loading
and
andmetallic
metallicloading;
loading;(b)
(b)fabricated
fabricatedprototypes
prototypesloaded
loadedwith
withdielectric
dielectricloading
loadingand
andmetallic
metallicloading,
loading,
respectively. Reprinted with permission from [11].
respectively. Reprinted with permission from [11].

Concerning the demand of SIR based sensors or comparators in microwaves, applications

include sensors for dielectric characterization, quality control, and microfluidics, among others. In
the paper, proof-of-concept demonstrators are presented. Since the electric field below the patches is
high, significant sensitivity can be potentially achieved by using multilayer structures and
arrangement of the structures under test in those regions.
Micromachines 2016, 7, 1 9 of 10

Concerning the demand of SIR based sensors or comparators in microwaves, applications

include sensors for dielectric characterization, quality control, and microfluidics, among others. In the
paper, proof-of-concept demonstrators are presented. Since the electric field below the patches is high,
significant sensitivity can be potentially achieved by using multilayer structures and arrangement of
the structures under test in those regions.

5. Conclusions
In summary, it has been shown that miniature microwave notch filters and comparators can
be implemented by means of transmission lines loaded with stepped impedance resonators (SIRs),
including stepped impedance shunt stubs (SISS) in microstrip technology, and 5-section SIRs (5-SIRs)
in coplanar waveguide (CPW) technology. The lumped element equivalent circuit models of these
electrically small planar structures have been proposed and validated, and an analysis that has lead
us to find the position of the transmission zero frequencies has been carried out. Finally, a proof of
concept of microwave comparators has been presented.

Acknowledgments: This work has been supported by MINECO (Spain) under project TEC2013-40600-R,
by AGAUR-Generalitat de Catalunya under project 2014SGR-157, and by FEDER funds. Ferran Martín is in
debt to Institució Catalana de Recerca i Estudis Avançats (ICREA) for supporting his work. Lijuan Su thanks
China Scholarship Council (CSC) for supporting her work in UAB through the grant No. 201306950011.
Author Contributions: Lijuan Su has designed and analyzed the CPW structures, Jordi Naqui has designed
and analyzed the microstrip structures, Javier Mata has carried out several calculations of the analysis carried
out in the CPW structures, and Ferran Martín has acted as director of the research and has written the
present manuscript.
Conflicts of Interest: The authors declare no conflict of interest.

References
1. Makimoto, M.; Sadahilo, Y. Compact bandpass filters using stepped impedance resonators. IEEE Proc. 1979,
67, 16–19. [CrossRef]
2. Hualiang, Z.; Chen, K.J. Miniaturized coplanar waveguide bandpass filters using multisection
stepped-impedance resonators. IEEE Trans. Microw. Theory Tech. 2006, 54, 1090–1095. [CrossRef]
3. Shi, J.; Quan, X. Novel balanced dual-band bandpass filter using coupled stepped-impedance resonators.
IEEE Microw. Wirel. Compon. Lett. 2010, 20, 19–21.
4. Ferran, M. Artificial Transmission Lines for RF and Microwave Applications; John Wiley & Sons: Hoboken, NJ,
USA, 2015.
5. Pendry, J.B.; Holden, A.J.; Robbins, D.J.; Stewart, W.J. Magnetism from conductors and enhanced nonlinear
phenomena. IEEE Trans. Microw. Theory. Tech. 1999, 47, 2075–2084. [CrossRef]
6. Durán-Sindreu, M.; Bonache, J.; Martín, F. Compact elliptic-function coplanar waveguide low-pass filters
using backside metallic patterns. IEEE Microw. Wirel. Compon. Lett. 2010, 20, 601–603. [CrossRef]
7. Naqui, J.; Durán-Sindreu, M.; Martín, F. On the symmetry properties of coplanar waveguides loaded with
symmetric resonators: Analysis and potential applications. In Proceedings of the IEEE MTT-S International
Microwave Symposium Digest (MTT), Montreal, QC, Canada, 17–22 June 2012.
8. Naqui, J.; Durán-Sindreu, M.; Bonache, J.; Martín, F. Implementation of shunt connected series resonators
through stepped-impedance shunt stubs: Analysis and limitations. IET Microw. Antennas Propag. 2011, 5,
1336–1342. [CrossRef]
9. Naqui, J.; Damm, C.; Wein, A.; Jakoby, R.; Su, L.; Martín, F. Transmission lines loaded with pairs of
magnetically coupled stepped impedance resonators (SIRs): Modeling and application to microwave
sensors. In Proceedings of the IEEE MTT-S International Microwave Symposium (IMS), Tampa, FL, USA,
1–6 June 2014.
10. Bonache, J.; Gil, M.; Gil, I.; Garcia, J.; Martín, F. On the electrical characteristics of complementary
metamaterial resonators. IEEE Microw. Wirel. Compon. Lett. 2006, 16, 543–545. [CrossRef]
Micromachines 2016, 7, 1 10 of 10

11. Su, L.; Naqui, J.; Mata, J.; Martín, F. Coplanar Waveguides Loaded with Symmetric and Asymmetric
Multi-Section Stepped Impedance Resonators (SIRs): Modeling and Potential Applications. Microw. Opt.
Technol. Lett. 2016, in press.
12. Naqui, J. Symmery Properties in Transmission Lines Loaded with Electrically Small Resonators: Circuit Modeling
and Applications; Springer: New York, NY, USA, 2016.
13. Naqui, J.; Durán-Sindreu, M.; Martín, F. Novel sensors based on the symmetry properties of split ring
resonators (SRRs). Sensors 2011, 11, 7545–7553. [CrossRef] [PubMed]
14. Naqui, J.; Durán-Sindreu, M.; Martín, F. Alignment and position sensors based on split ring resonators.
Sensors 2012, 12, 11790–11797. [CrossRef]
15. Horestani, A.K.; Fumeaux, C.; Al-Sarawi, S.; Abbott, D. Displacement sensor based on diamond-shaped
tapered split ring resonator. IEEE Sens. J. 2013, 13, 1153–1160. [CrossRef]
16. Horestani, A.K.; Abbott, D.; Fumeaux, C. Rotation sensor based on horn-shaped split ring resonator.
IEEE Sens. J. 2013, 13, 3014–3015. [CrossRef]
17. Horestani, A.K.; Naqui, J.; Shaterian, Z.; Abbott, D.; Fumeaux, C.; Martín, F. Two-dimensional alignment
and displacement sensor based on movable broadside-coupled split ring resonators. Sens. Actuators A 2014,
210, 18–24. [CrossRef]

© 2015 by the authors; licensee MDPI, Basel, Switzerland. This article is an open
access article distributed under the terms and conditions of the Creative Commons by
Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).